CN103066475A - Method for reducing contact resistance based on low-melting-point metal and oxide thereof - Google Patents
Method for reducing contact resistance based on low-melting-point metal and oxide thereof Download PDFInfo
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- CN103066475A CN103066475A CN2013100049719A CN201310004971A CN103066475A CN 103066475 A CN103066475 A CN 103066475A CN 2013100049719 A CN2013100049719 A CN 2013100049719A CN 201310004971 A CN201310004971 A CN 201310004971A CN 103066475 A CN103066475 A CN 103066475A
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- 239000002184 metal Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 33
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 50
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 43
- 239000000956 alloy Substances 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001152 Bi alloy Inorganic materials 0.000 claims abstract description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 6
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 6
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 6
- 239000011591 potassium Substances 0.000 claims abstract description 6
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 6
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 6
- 239000011734 sodium Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 12
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 10
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003251 Na K Inorganic materials 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 229910000645 Hg alloy Inorganic materials 0.000 claims description 4
- 229910000846 In alloy Inorganic materials 0.000 claims description 4
- 229910000978 Pb alloy Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 7
- 229910000799 K alloy Inorganic materials 0.000 abstract 1
- 229910002056 binary alloy Inorganic materials 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 239000006071 cream Substances 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229960004643 cupric oxide Drugs 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/28—Clamped connections, spring connections
- H01R4/30—Clamped connections, spring connections utilising a screw or nut clamping member
- H01R4/304—Clamped connections, spring connections utilising a screw or nut clamping member having means for improving contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/28—Clamped connections, spring connections
- H01R4/30—Clamped connections, spring connections utilising a screw or nut clamping member
- H01R4/34—Conductive members located under head of screw
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Abstract
The invention relates to a method for reducing contact resistance based on low-melting-point metal and an oxide thereof. By coating the low-melting-point metal and the oxide thereof between electric terminals connected with machinery, the contact resistance between the mechanical electric terminals is reduced effectively. The invention further relates to a conductive paste composing of the low-melting-point metal and the oxide thereof. The oxide takes 0.05% to 50% of the total weight of the conductive paste. The low-melting-point metal is one type or a combination of any two types selected from sodium, potassium, lithium, rubidium, cesium, gallium, indium, mercury, lead bismuth alloy, gallium-base binary alloy, gallium-base complex alloy, indium-base alloy, bismuth-base alloy, mercury-base alloy and sodium-potassium alloy which are lower than 200 DEG C in melting point. With the compound of the low-melting-point metal and the oxide thereof as the conducting medium, the method for reducing contact resistance can effectively reduce the contact resistance between the electric terminals connected with the machinery, significantly reduce the contact resistance heat effect, improve transmission efficiency of electric energy and prolong the service life of the machinery. The method for reducing contact resistance based on the low-melting-point metal and the oxide thereof can be widely applied to the technical fields of electric power and energy.
Description
Technical field
The present invention relates to a kind of method that reduces contact resistance, particularly relate to a kind of method that reduces contact resistance with low-melting-point metal and oxide thereof.
Background technology
The generation of contact resistance mainly contains two reasons: the first, because contact-making surface is uneven, the actual contact-making surface of metal reduces, and when electric current flow through conductor, the effective thermal interface of its contact-making surface reduced.The second, contact-making surface can form the very poor oxide-film of one deck conductivity and be attached to the surface in air, resistance is increased.The size of the affects touch voltage pressure drop of contact resistance increases along with contact resistance increases pressure drop thereupon, and the variation of voltage directly affects the normal operation of equipment.The electric energy of contact resistance consumption will change heat energy into, make it at the contact-making surface distribute heat, be the aging major reason of contact-making surface.The method of the reduction contact resistance of main flow has at present: 1) improve the material of contact-making surface, improve electric conductivity, as changing surface gold-plating etc. into by copper; 2) in time clear up the oxide-film that contact-making surface forms.3) at contact interface filled conductive cream.It is higher to change the contact-making surface material cost, and performance boost is less; Cleaning contact-making surface oxide-film increases maintenance cost, and feasibility is not high; Contact interface filled conductive cream effect is limited, and it is nonmetal that its main cause is that the basic material of present conductive paste is, and conductivity is very limited.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of utilizing low-melting-point metal and oxide thereof to reduce contact resistance.
For reaching above-mentioned purpose, the present invention is a kind of to reduce the method for contact resistance based on low-melting-point metal and oxide thereof, and low-melting-point metal and oxide-coated thereof between the electric connection of mechanical connection, are effectively reduced the contact resistance between the mechanical electric jointing.The low-melting-point metal that is coated between the mechanical connection electric connection has the ability in higher conductivity and filling slit, contact.The effect of low-melting-point metal oxide is to promote the viscosity of coated low-melting-point metal and hopcalite thereof, so that mixture is paste, is convenient to smear.
The present invention reduces the method for contact resistance, and wherein preferred described low-melting-point metal is selected from a kind of or arbitrarily two or more combination of fusing point in the sodium below 200 ℃, potassium, lithium, rubidium, caesium, gallium, indium, mercury, lead bismuth alloy, gallium base bianry alloy, gallium based multicomponent alloy, indium-base alloy, bismuth-base alloy, mercury-base alloy and Na-K alloy.
The present invention reduces the method for contact resistance, and wherein preferred described gallium base bianry alloy is gallium indium alloy, gallium ashbury metal, gallium kirsite, gallium lead alloy or gallium mercury alloy.Preferred described gallium based multicomponent alloy is gallium-indium-tin alloy or gallium indium tin kirsite.
The present invention reduces the method for contact resistance, and wherein preferred described low-melting-point metal oxide is selected from a kind of or arbitrarily two or more combination in gallium oxide, indium oxide, bismuth oxide, tin oxide and the zinc oxide.
The present invention reduces the method for contact resistance, and wherein the material of preferred described electric connection is copper, aluminium or stainless steel.
The present invention reduces the method for contact resistance, and wherein the coating thickness of preferred described low-melting-point metal and oxide thereof is 0.001mm-5mm.
The present invention reduces the method for contact resistance, and wherein preferred described oxide accounts for the 0.05-50% of low-melting-point metal and oxide total weight thereof.
The invention still further relates to a kind of conductive paste, formed by low-melting-point metal and oxide thereof, described oxide accounts for the 0.05-50% of low-melting-point metal and oxide total weight (being conductive paste weight) thereof, and described low-melting-point metal is selected from a kind of or arbitrarily two or more combination of fusing point in the sodium below 200 ℃, potassium, lithium, rubidium, caesium, gallium, indium, mercury, lead bismuth alloy, gallium base bianry alloy, gallium based multicomponent alloy, indium-base alloy, bismuth-base alloy, mercury-base alloy and Na-K alloy.
Further preferably, conductive paste of the present invention, described gallium base bianry alloy is gallium indium alloy, gallium ashbury metal, gallium kirsite, gallium lead alloy or gallium mercury alloy; Described gallium based multicomponent alloy is gallium-indium-tin alloy or gallium indium tin kirsite; Preferred described low-melting-point metal oxide is selected from a kind of or arbitrarily two or more combination in gallium oxide, indium oxide, bismuth oxide, tin oxide and the zinc oxide.
The invention difference from existing technology is that the present invention proposes a kind of method based on low-melting-point metal and oxide reduction contact resistance thereof.It utilizes low-melting-point metal state in lower temperature (being non high temperature) situation can promote its viscosity (being characteristic easy to apply) by its oxide, and have the advantage of stronger conductive characteristic for liquid, effectively reduces the contact resistance that connects electric connection.Its typical advantages is as follows: 1) low-melting-point metal and hopcalite thereof have good viscosity, can be rendered as paste, and property easy to apply is strong; 2) low-melting-point metal has stronger electric conductivity, and it is filled in the contact slit on metal joint surface, can effectively reduce its contact resistance, promotes electrical efficiency; 3) the easy compression property of low-melting-point metal and hopcalite thereof is strong, when contact-making surface is squeezed the phase mutual friction of two metal joints surfaces more abundant, oxide layer is destroyed obviously, conductivity strengthens.4) low-melting-point metal can form intermetallic compound with the electric connection metal, electrically contacts more fully, has further reduced contact resistance.5) nontoxic, the difficult evaporation leakage of low-melting-point metal and oxide thereof, stable in properties, the difficult decomposition under forceful electric power.
Be understood that the low-melting-point metal that relates among the present invention and hopcalite thereof be a kind of conductive paste in fact namely in use.But different is, has high conductivity based on the conductive paste of low-melting-point metal and oxide thereof for conventional conductive cream, and it is excellent many that conductivity is wanted.Simultaneously, after the oxide-doped processing of low-melting-point metal, its viscosity is greatly improved, and the user is very easy to use.
The present invention proposes a kind of method that reduces contact resistance, improves the electric energy service efficiency, the method with low-melting-point metal and hopcalite thereof as conducting medium, can effectively reduce the contact resistance between mechanical connection metal electric joint, significantly reduce the contact resistance thermal effect, promote delivery of electrical energy efficient, extension device useful life.Can be widely used in electric power, energy technology field.
The method that reduces contact resistance below in conjunction with accompanying drawing to the present invention is based on low-melting-point metal and oxide thereof is described further.
Description of drawings
Fig. 1 uses the specific embodiment structural representation of the inventive method.
Description of reference numerals: 1-holding screw; 2-low-melting-point metal and hopcalite thereof (conductive paste); 3, the 4-rectangle electric connection sheet metal of screw (namely with).
Embodiment
Below be the embodiment that uses the inventive method, but content of the present invention is not limited to the scope of these embodiment.
Embodiment 1
The invention provides a kind of method of utilizing low-melting-point metal and oxide thereof to reduce contact resistance.As shown in Figure 1, these parts are comprised of holding screw 1, low-melting-point metal and hopcalite 2 thereof, two ganoid rectangle electric connections sheet metal of screw (namely with) 3,4.Electric connection 3 is of a size of 6cm * 3cm * 1cm; Electric connection 4 is of a size of 6cm * 3cm * 1cm.The material of electric connection 3, electric connection 4 is red copper (can be aluminium or stainless steel etc. in addition); Holding screw 1 material is brass.
Conductive paste of the present invention (low-melting-point metal and hopcalite 2 thereof) is comprised of gallium-indium-tin alloy and gallium oxide, and wherein the mass fraction of gallium oxide is 1%.During use, with low-melting-point metal and hopcalite 2 evenly is coated on sheet metal 3 contact surfaces and it is fully contacted, coating thickness is 0.1mm, then by holding screw 1 sheet metal 3 is connected with sheet metal 4.
Because low-melting-point metal and hopcalite 2 thereof have high conductivity, it is filled in two electric connections 3,4 can significantly reduce the contact resistance thermal effect, reduces the contact resistance between jointing, promotes delivery of electrical energy efficient.Commercially available conduction silicone grease conductivity generally only is 1-10 at present
4S/m, the low-melting-point metal in the present embodiment and hopcalite conductivity thereof can reach 1 * 10
5-3 * 10
6S/m, electric conductivity significantly promotes, and can effectively reduce the contact resistance between jointing.
The invention provides a kind of method of utilizing low-melting-point metal and oxide thereof to reduce contact resistance.As shown in Figure 1, these parts are comprised of holding screw 1, low-melting-point metal and hopcalite 2 thereof, two ganoid rectangle electric connections sheet metal of screw (namely with) 3,4.Electric connection 3 is of a size of 10cm * 5cm * 1cm; Electric connection 4 is of a size of 10cm * 5cm * 1cm.The material of electric connection 3, electric connection 4 is stainless steel (can be aluminium or copper etc. in addition); Holding screw 1 material is brass.
Conductive paste of the present invention (low-melting-point metal and hopcalite 2 thereof) is comprised of gallium indium Guillaume metal, gallium oxide and indium oxide, and wherein the mass fraction of gallium oxide is 2%, and the indium oxide mass fraction is 1%.During use, with low-melting-point metal and hopcalite 2 evenly is coated on sheet metal 3 contact surfaces and it is fully contacted, coating thickness is 0.3mm, then by holding screw 1 sheet metal 3 is connected with sheet metal 4.
Because low-melting-point metal and hopcalite 2 thereof have high conductivity, it is filled in two electric connections 3,4 can significantly reduce the contact resistance thermal effect, reduces the contact resistance between jointing, promotes delivery of electrical energy efficient.Commercially available conduction silicone grease conductivity is 1～10 at present
4S/m, the low-melting-point metal in the present embodiment and hopcalite conductivity thereof are about 1 * 10
6S/m, electric conductivity promotes significantly, can effectively reduce the contact resistance between jointing.
The invention provides a kind of method of utilizing low-melting-point metal and oxide thereof to reduce contact resistance.As shown in Figure 1, these parts are comprised of holding screw 1, low-melting-point metal and hopcalite 2 thereof, two ganoid rectangle electric connections sheet metal of screw (namely with) 3,4.Electric connection 3 is of a size of 8cm * 8cm * 4cm; Electric connection 4 is of a size of 8cm * 8cm * 4cm.Electric connection 3 materials are that the material of stainless steel, electric connection 4 is red copper; Holding screw 1 material is brass.
Conductive paste of the present invention (low-melting-point metal and hopcalite 2 thereof) is comprised of gallium SAC alloy, gallium oxide and cupric oxide, and wherein the mass fraction of gallium oxide is 3%, and the cupric oxide mass fraction is 1%.During use, with low-melting-point metal and hopcalite 2 evenly is coated on sheet metal 3 contact surfaces and it is fully contacted, coating thickness is 0.2mm, then by holding screw 1 sheet metal 3 is connected with sheet metal 4.
Because low-melting-point metal and hopcalite 2 thereof have high conductivity, it is filled in two electric connections 3,4 can significantly reduce the contact resistance thermal effect, reduces the contact resistance between jointing, promotes delivery of electrical energy efficient.Commercially available conduction silicone grease conductivity is 1～10 at present
4S/m, the low-melting-point metal in the present embodiment and hopcalite conductivity thereof are 5 * 10
6S/m, electric conductivity promotes significantly, can effectively reduce the contact resistance between jointing.
In addition, in other specific embodiments, conductive paste of the present invention (low-melting-point metal and hopcalite 2 thereof) can also be the oxide of one or more and any one aforementioned metal in sodium, potassium, lithium, rubidium, caesium, gallium, indium, mercury, lead bismuth alloy, gallium base bianry alloy, gallium based multicomponent alloy, indium-base alloy, bismuth-base alloy, mercury-base alloy and the Na-K alloy, is not limited to enumerating among the embodiment.The mass percent of oxide in mixture determine by the needed viscosity of mixture, and oxide shared mass fraction in mixture is larger, and then the viscosity of mixture is larger.10% to 50% mass fraction also can exist, and the very dried pasty masses of the approximate a kind of very thickness of mixture this moment is for modulating the maximum of viscosity.Therefore, the mass percent of oxide in mixture 2 can be numerical value arbitrarily between the 0.05-50% such as 0.05%, 0.1%, 1%, 5%, 10%, 50%.
Coating thickness is determined by the mechanical tolerance of the two metal sheets that connects.If both are tight fit, then coating thickness is less; If both are loose fit, then coating thickness needs to increase.But generally speaking, coating thickness is got over Bao Yuehao, and thinner then contact resistance is less.Therefore, in other embodiments, coating thickness can also be numerical value arbitrarily between the 0.001mm-5mm such as 0.001mm, 0.01mm, 1mm, 5mm, is not limited to enumerating of above-described embodiment.
Above-described embodiment is described preferred implementation of the present invention; be not that scope of the present invention is limited; design under the prerequisite of spirit not breaking away from the present invention; various distortion and improvement that those of ordinary skills make technical scheme of the present invention all should fall in the definite protection range of claims of the present invention.
Claims (10)
1. one kind is reduced the method for contact resistance based on low-melting-point metal and oxide thereof, it is characterized in that: with low-melting-point metal and oxide-coated thereof between the electric connection of mechanical connection.
2. method according to claim 1 is characterized in that: described low-melting-point metal is selected from a kind of or arbitrarily two or more combination of fusing point in the sodium below 200 ℃, potassium, lithium, rubidium, caesium, gallium, indium, mercury, lead bismuth alloy, gallium base bianry alloy, gallium based multicomponent alloy, indium-base alloy, bismuth-base alloy, mercury-base alloy and Na-K alloy.
3. method according to claim 2, it is characterized in that: described gallium base bianry alloy is gallium indium alloy, gallium ashbury metal, gallium kirsite, gallium lead alloy or gallium mercury alloy.
4. method according to claim 2, it is characterized in that: described gallium based multicomponent alloy is gallium-indium-tin alloy or gallium indium tin kirsite.
5. method according to claim 1 is characterized in that: described low-melting-point metal oxide is selected from a kind of or arbitrarily two or more combination in gallium oxide, indium oxide, bismuth oxide, tin oxide and the zinc oxide.
6. method according to claim 1, it is characterized in that: the material of described electric connection is copper, aluminium or stainless steel.
7. method according to claim 1, it is characterized in that: the coating thickness of described low-melting-point metal and oxide thereof is 0.001mm-5mm.
8. method according to claim 1, it is characterized in that: described oxide accounts for the 0.05-50% of low-melting-point metal and oxide total weight thereof.
9. conductive paste, it is characterized in that: formed by low-melting-point metal and oxide thereof, described oxide accounts for the 0.05-50% of low-melting-point metal and oxide total weight thereof, and described low-melting-point metal is selected from a kind of or arbitrarily two or more combination of fusing point in the sodium below 200 ℃, potassium, lithium, rubidium, caesium, gallium, indium, mercury, lead bismuth alloy, gallium base bianry alloy, gallium based multicomponent alloy, indium-base alloy, bismuth-base alloy, mercury-base alloy and Na-K alloy.
10. conductive paste according to claim 9, it is characterized in that: described gallium base bianry alloy is gallium indium alloy, gallium ashbury metal, gallium kirsite, gallium lead alloy or gallium mercury alloy; Further preferably, described gallium based multicomponent alloy is gallium-indium-tin alloy or gallium indium tin kirsite; Preferred described low-melting-point metal oxide is selected from a kind of or arbitrarily two or more combination in gallium oxide, indium oxide, bismuth oxide, tin oxide and the zinc oxide.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310004971.9A CN103066475B (en) | 2013-01-07 | 2013-01-07 | Method for reducing contact resistance based on low-melting-point metal and oxide thereof |
| PCT/CN2013/001421 WO2014106313A1 (en) | 2013-01-07 | 2013-11-20 | Method for reducing contact resistance based on metal with low melting point and oxide thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310004971.9A CN103066475B (en) | 2013-01-07 | 2013-01-07 | Method for reducing contact resistance based on low-melting-point metal and oxide thereof |
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| CN103066475B CN103066475B (en) | 2014-09-10 |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103198911A (en) * | 2013-04-28 | 2013-07-10 | 北京依米康散热技术有限公司 | Low-melting-point metal liquid rheostat |
| CN103326142A (en) * | 2013-06-09 | 2013-09-25 | 北京依米康科技发展有限公司 | Low-melting-point metal cable continuation device |
| WO2014106313A1 (en) * | 2013-01-07 | 2014-07-10 | Guo Rui | Method for reducing contact resistance based on metal with low melting point and oxide thereof |
| CN104917025A (en) * | 2015-07-08 | 2015-09-16 | 北京依米康科技发展有限公司 | Method for conductive connection of cables |
| CN104992742A (en) * | 2015-07-08 | 2015-10-21 | 北京依米康科技发展有限公司 | High-viscosity and low-melting-point metal conductive paste and preparation method and application thereof |
| CN105336906A (en) * | 2015-11-03 | 2016-02-17 | 虞惠财 | Battery lead of mobile terminal |
| CN105355831A (en) * | 2015-11-03 | 2016-02-24 | 虞惠财 | Cell lead |
| RU2580355C1 (en) * | 2014-11-24 | 2016-04-10 | Общество с ограниченной ответственностью "Энкон-сервис" (ООО "Энкон-сервис") | Method for application of metal coating on current-transmitting surfaces of contact joints |
| CN106451029A (en) * | 2016-09-22 | 2017-02-22 | 合肥聚能电物理高技术开发有限公司 | Indium wire overlapping device and overlapping process of superconduction connector |
| EP3007277A4 (en) * | 2013-05-29 | 2017-03-08 | Nippon Light Metal Co., Ltd. | Conducting member |
| CN107274965A (en) * | 2017-07-03 | 2017-10-20 | 云南科威液态金属谷研发有限公司 | Electric slurry and its manufacture method based on low-melting-point metal micro-nano powder |
| CN107452436A (en) * | 2017-07-04 | 2017-12-08 | 云南科威液态金属谷研发有限公司 | A kind of liquid metal electric slurry and preparation method thereof |
| CN108511246A (en) * | 2018-05-28 | 2018-09-07 | 北京梦之墨科技有限公司 | A kind of thin film switch and preparation facilities and method using screen printing mode preparation |
| CN109687252A (en) * | 2019-01-31 | 2019-04-26 | 昆明品启科技有限公司 | A kind of connection method of the copper using low melting point liquid metal-copper electrical connection |
| CN110677984A (en) * | 2019-10-07 | 2020-01-10 | 浙江大学 | Liquid metal-polymer printable ink and preparation and printing methods thereof |
| CN111987488A (en) * | 2019-05-23 | 2020-11-24 | 广州华嘉电力科技有限公司 | Connecting device and method for self healing of power equipment connector |
| KR20230001391A (en) * | 2021-06-28 | 2023-01-04 | 오석환 | Coupling structure of bus bar, coupling method of bus bar, and distributing board using the same |
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| CN2083802U (en) * | 1990-12-24 | 1991-08-28 | 上海新沪电缆附件厂 | Wire connecting clamp for cable end box |
| CN101689413A (en) * | 2007-07-06 | 2010-03-31 | 积水化学工业株式会社 | Electrically conductive microparticle, anisotropic conductive material and syndeton body |
| CN101425638B (en) * | 2007-08-24 | 2011-05-11 | 株式会社神户制钢所 | Conductive material for a connecting part |
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Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014106313A1 (en) * | 2013-01-07 | 2014-07-10 | Guo Rui | Method for reducing contact resistance based on metal with low melting point and oxide thereof |
| CN103198911A (en) * | 2013-04-28 | 2013-07-10 | 北京依米康散热技术有限公司 | Low-melting-point metal liquid rheostat |
| US9825377B2 (en) | 2013-05-29 | 2017-11-21 | Nippon Light Metal Company, Ltd. | Conducting member |
| EP3007277A4 (en) * | 2013-05-29 | 2017-03-08 | Nippon Light Metal Co., Ltd. | Conducting member |
| CN103326142A (en) * | 2013-06-09 | 2013-09-25 | 北京依米康科技发展有限公司 | Low-melting-point metal cable continuation device |
| RU2580355C1 (en) * | 2014-11-24 | 2016-04-10 | Общество с ограниченной ответственностью "Энкон-сервис" (ООО "Энкон-сервис") | Method for application of metal coating on current-transmitting surfaces of contact joints |
| CN104917025A (en) * | 2015-07-08 | 2015-09-16 | 北京依米康科技发展有限公司 | Method for conductive connection of cables |
| CN104992742A (en) * | 2015-07-08 | 2015-10-21 | 北京依米康科技发展有限公司 | High-viscosity and low-melting-point metal conductive paste and preparation method and application thereof |
| CN104992742B (en) * | 2015-07-08 | 2018-05-18 | 北京态金科技有限公司 | High viscosity low-melting-point metal conductive paste and preparation method thereof |
| CN105355831A (en) * | 2015-11-03 | 2016-02-24 | 虞惠财 | Cell lead |
| CN105336906A (en) * | 2015-11-03 | 2016-02-17 | 虞惠财 | Battery lead of mobile terminal |
| CN106451029A (en) * | 2016-09-22 | 2017-02-22 | 合肥聚能电物理高技术开发有限公司 | Indium wire overlapping device and overlapping process of superconduction connector |
| CN106451029B (en) * | 2016-09-22 | 2018-07-13 | 合肥聚能电物理高技术开发有限公司 | Superconducting joint indium silk lap device and its lap joint process |
| CN107274965A (en) * | 2017-07-03 | 2017-10-20 | 云南科威液态金属谷研发有限公司 | Electric slurry and its manufacture method based on low-melting-point metal micro-nano powder |
| CN107274965B (en) * | 2017-07-03 | 2019-07-05 | 云南科威液态金属谷研发有限公司 | Electric slurry and its manufacturing method based on low-melting-point metal micro-nano powder |
| CN107452436A (en) * | 2017-07-04 | 2017-12-08 | 云南科威液态金属谷研发有限公司 | A kind of liquid metal electric slurry and preparation method thereof |
| CN108511246A (en) * | 2018-05-28 | 2018-09-07 | 北京梦之墨科技有限公司 | A kind of thin film switch and preparation facilities and method using screen printing mode preparation |
| CN108511246B (en) * | 2018-05-28 | 2024-05-03 | 北京梦之墨科技有限公司 | Membrane switch prepared by screen printing mode and preparation device and method |
| CN109687252A (en) * | 2019-01-31 | 2019-04-26 | 昆明品启科技有限公司 | A kind of connection method of the copper using low melting point liquid metal-copper electrical connection |
| CN111987488A (en) * | 2019-05-23 | 2020-11-24 | 广州华嘉电力科技有限公司 | Connecting device and method for self healing of power equipment connector |
| CN110677984A (en) * | 2019-10-07 | 2020-01-10 | 浙江大学 | Liquid metal-polymer printable ink and preparation and printing methods thereof |
| CN110677984B (en) * | 2019-10-07 | 2021-06-04 | 浙江大学 | Liquid metal-polymer printable ink and preparation and printing methods thereof |
| KR20230001391A (en) * | 2021-06-28 | 2023-01-04 | 오석환 | Coupling structure of bus bar, coupling method of bus bar, and distributing board using the same |
| KR102561159B1 (en) * | 2021-06-28 | 2023-07-27 | 오석환 | Coupling structure of bus bar, coupling method of bus bar, and distributing board using the same |
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| WO2014106313A1 (en) | 2014-07-10 |
| CN103066475B (en) | 2014-09-10 |
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