CN103064199A - Reflection-type adjustable light delay line - Google Patents
Reflection-type adjustable light delay line Download PDFInfo
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- CN103064199A CN103064199A CN2012105291983A CN201210529198A CN103064199A CN 103064199 A CN103064199 A CN 103064199A CN 2012105291983 A CN2012105291983 A CN 2012105291983A CN 201210529198 A CN201210529198 A CN 201210529198A CN 103064199 A CN103064199 A CN 103064199A
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Abstract
A reflection-type adjustable light delay line comprises a light delay structure and a light reflection structure which are connected in series. Input optical signals are input from the input end of the light delay structure, the optical signals are input in the light reflection structure after light delay and then return the light delay structure after reflection, and the delayed optical signals are output from the input end of the light delay structure after light delay of the light delay structure. The reflection-type adjustable light delay line achieves continuous adjustment of optical signal retardation by adjusting phase or coupling changes of the light delay structure, has the advantages of being simple in structure, small in size and wide in bandwidth, and greatly reduces retarded control consumption due to each light delay structure has multiplexing effects when the retarded control is carried out by using a thermo-optic effect or a plasma dispersion effect.
Description
Technical field
The present invention relates to a kind of optical communication, specifically form the reflection-type variable optical delay line by adding reflection configuration at conventional transmission type optical delay line one end, this device can under the prerequisite that does not increase the delay cell structure, improve the product of light signal retardation and bandwidth.
Background technology
Variable optical delay line has a wide range of applications and considerable Research Significance at aspects such as data buffer storage, signal processing and phase battle array radars.Data buffer storage is a key modules in the optical communication network, and it can avoid the channel network collision problem, improves the handling capacity of network node, thereby reduces packet loss.Because the optical memory structure not yet realizes at present, above-mentioned data buffer storage function all is to rely on variable optical delay line to finish.Aspect the signal processing, variable optical delay line can be realized efficient restructural optics signal processing, and (such as optical analog-to-digital converter) also is considerable optical module in many microwave photon signal processing systems.In phase battle array radar, because the phase place of light-operated phased array antenna is relevant with frequency, different spectral components points to different directions, causes signal attenuation, utilizes variable optical delay line can effectively overcome this problem.In recent years, the research of integrated photonics has obtained conspicuous achievement at home and abroad.Because it adopts traditional semiconducter process, have the processing of being easy to and lower-cost advantage.The main devices of integrated photonics research comprises modulator, detector, variable delay line, adjustable filter etc., wherein variable optical delay line is owing to there being above-mentioned the application widely to become a study hotspot, and the variation of scheme is also so that it has very large development potentiality.
The scheme that realizes variable optical delay line has a lot, mainly comprises optical resonator, chirp grating and photonic crystal etc.Such as people such as Jaime Cardenas at OPTICS EXPRESS (Vol.18, No.25) propose a kind of structure by the silicon-based micro ring cascade coupled in the paper of delivering on " Wide-bandwidth continuously tunable optical delayline using silicon microring resonators " and realize light delay, realized the adjustable delay amount of 10GHz bandwidth light pulse 135ps by hot optical modulation.The people such as Qing Li are at PHOTONICS TECHNOLOGY LETTERS(Vol.24, No.15) propose among " the Low-loss microdisk-based delay lines for narrowband optical filters " that delivers on to utilize little dish resonator cavity to do lag line, utilize three rank patterns to realize the delay of hundred picosecond magnitudes.In addition, people such as Ivano Giuntoni 2009 are at OPTICS EXPRESS (Vol.17, No.21) propose in the paper of delivering on " Tunable Bragg reflectors on silicon-on-insulator ribwaveguides " to realize chirp grating in the cycle of silica-based change grating, the refractive index of silicon changes after the heating, so that the reflection position of light signal changes, realize that tunable optical postpones.The people such as Toshihiko Baba are at NATURE PHOTONICS (Vol.1, No.2) mention the high group refractive index characteristic that utilizes the photonic crystal band edge in the paper of delivering on " Slow light inphotonic crystals " and produce slower rays, realize adjustable delay.
The comprehensive method of having reported, although variable delay line can realize by many structures, also have some problems.Above-mentioned various structures are resonance structure, the performance that light signal postpones is subject to the intrinsic delay-bandwidth product of resonance structure itself, usually adopt the mode of cascade to increase retardation and bandwidth, this scheme has increased the volume of device, and because the processing technology error, resonance frequency can't accurately be controlled, need the later stage to regulate one by one, the cascade number is more, and required adjustment module is more, has increased complexity and the power consumption of system.
Summary of the invention
The object of the invention is to for above-mentioned the deficiencies in the prior art, a kind of reflection-type variable optical delay line is provided, by the multiplexed optical delay structure, improved its utilization factor, increased by one times so that postpone bandwidth product.When utilizing thermo-optic effect or plasma dispersion effect etc. to postpone to regulate, because the optical delay structure has multiplexing effect, the optical delay structure that needs to regulate reduces half than conventional lag line, has therefore also reduced more significantly to postpone to regulate power consumption.
For achieving the above object, technical solution of the present invention is as follows:
A kind of reflection-type variable optical delay line, its characteristics are, consisted of by light delay structure and light reflection structure, the input end input of the described light delay structure of optical signals of input, the described light reflection structure of input after reflection after light delay, return described light delay structure, again the light signal after the input end output time-delay of described light delay structure after described light delay structured light postpones.
Described light delay structure is single micro-ring resonant cavity, little dish resonator cavity, grating, photonic crystal or is made of a plurality of described micro-ring resonant cavities, little dish resonator cavity, grating, photonic crystal cascade.
Described optical reflection structure is made of micro-resonant cavity, photonic crystal, grating or Sagnac-ring.
The time-delay that described optical delay structure produces can be regulated by thermo-optic effect, electrooptical effect, plasma dispersion effect etc.Thermo-optic effect is by regulating the refractive index of temperature change material; Electrooptical effect is that the refractive index of material changes because of extra electric field; Plasma dispersion effect generally is after material is mixed, by extra electric field so that charge carrier move, thereby change refractive index.As long as changed the refractive index of device by above-mentioned three kinds of modes, the time delay of the light that can make certain wavelength after by optical delay line changes.Particularly, for the integrated photonic device of the materials processings such as silicon, quartz or silicon nitride, can realize regulatory function by introduce the metal fever electrode on the device upper strata; For silica-based integrated photonic device can also be in the optical delay structured waveguide or both sides carry out the doping of p-type or N-shaped by Implantation, form p-n junction, p-i-n knot, p-i-p knot, n-i-n knot etc.When adopting p-i-p or n-i-n structure, intrinsic i district is equivalent to a resistance, when tie at p-i-p or n-i-n power up after, resistance produces heat, the rising of intrinsic region temperature, thermo-optic effect causes the refraction index changing of silicon waveguide, thereby reaches regulating effect.When adopting the p-i-n structure, when adding forward voltage, carrier injection is to intrinsic i district, and carrier concentration increases, and plasma dispersion effect causes the refractive index of silicon waveguide to reduce.When adopting p-n junction or toe p-n junction, need in waveguide, carry out respectively light dope and heavy doping, form depletion layer, but load the forward voltage injected carrier, reduce waveguide index, can increase depletion width and load reverse voltage, increase waveguide index.
Principle of the present invention is that light signal at first passes through the optical delay structure, produces on the time domain to postpone; Return by the former road of reflection configuration light signal; Again by the optical delay structure, increase the retardation of light signal; Final light signal after the input end output delay.By regulating phase place or the couple variations of optical delay structure, can realize the adjustable continuously of light signal retardation.
Compared with prior art, the present invention has extenuated that variable optical delay line is subject to delay-bandwidth product and the problem that needs multi-stage cascade makes the optical delay structure multiplexing by reflection, realizes the adjustable continuously of high bandwidth light signal retardation on a large scale.
Description of drawings
Fig. 1 is the structural representation of reflection-type variable optical delay line integrated device of the present invention.
Fig. 2 is little ring optical resonator device synoptic diagram that the present invention is used for the light delay structure.
Fig. 3 is little dish optical resonator device synoptic diagram that the present invention is used for the light delay structure.
Fig. 4 is the photon crystal device synoptic diagram that the present invention is used for light delay structure and reflection configuration.
Fig. 5 is the grating device synoptic diagram that the present invention is used for light delay structure and reflection configuration.
Fig. 6 is the micro-resonant cavity reflection configuration synoptic diagram that the present invention is used for light reflection structure.
Fig. 7 is the Sagnac reflection configuration synoptic diagram that the present invention is used for light reflection structure.
Fig. 8 is the little dish optical delay line of the embodiment of the invention 1 reflection-type synoptic diagram, and what its reflection configuration used is photon crystal device.
Fig. 9 is the little dish optical delay line of the embodiment of the invention 2 reflection-types synoptic diagram, and what its reflection configuration used is the micro-ring resonant cavity device.
Figure 10 is the embodiment of the invention 3 reflection type optical grid delay line synoptic diagram, and what its reflection configuration used is photon crystal device.
Figure 11 is the embodiment of the invention 4 reflection-type photon crystal lag line synoptic diagram, and what its reflection configuration used is photon crystal device.
Figure 12 is the embodiment of the invention 5 little ring of reflection-type limit coupled cascade (SCISSOR) variable optical delay line structural representations, and what its reflection configuration used is the Sagnac mirror device.
Figure 13 is the delay spectral lines of the embodiment of the invention 6 little ring of reflection-type limit coupled cascade (SCISSOR) variable optical delay line integrated devices when not having making alive.
Figure 14 is the little ring of reflection-type limit coupled cascade (SCISSOR) variable optical delay line structural representation.
Figure 15 shows that the delay spectral line when the little ring of embodiment of the invention reflection-type limit coupled cascade (SCISSOR) variable optical delay line integrated device does not have making alive
Figure 16 shows that the delay spectral line of embodiment of the invention toe p-n junction reflection-type monocycle variable optical delay line integrated device under different adjustment voltage.
Figure 17 shows that the delay spectral line of embodiment of the invention toe p-n junction reflection-type monocycle variable optical delay line integrated device under different adjustment voltage.
Embodiment
The present invention is further elaborated below in conjunction with drawings and Examples, but should not limit protection scope of the present invention with this.
The present invention proposes a kind of reflection-type variable delay line, this lag line is the integrated optical device that jointly is made of light delay structure and reflection configuration.When voltage-drop loading is to the electrode because thermo-optic effect or plasma dispersion effect so that Refractive Index of Material change, thereby change lag characteristic, can the control lag amount by the control impressed voltage.
Fig. 1 is reflection-type variable optical delay line integrated device structural representation of the present invention.As shown in Figure 1, the present invention mainly is comprised of light delay structure and reflection configuration.First through a light delay structure, behind reflection configuration, again pass through the light delay structure after the light signal input, the light signal after the last output delay.
Light delay structure in the reflection-type variable optical delay line of the present invention can be realized by following several devices: little ring optical resonator, little dish optical resonator, photonic crystal and grating correspond respectively to Fig. 2, Fig. 3, Fig. 4 and Fig. 5.Described light delay structure can be that above-mentioned individual devices forms, and also can be that the mode of a plurality of device cascades forms, and general the employing joins with the kind device level.Figure 6 shows that the synoptic diagram of a plurality of little ring optical resonator cascade, Fig. 7 is the synoptic diagram of a plurality of little dish optical resonator cascade.Reflection configuration in the reflection-type variable optical delay line of the present invention can be realized by following several structures: micro-resonant cavity, photonic crystal, grating and Sagnac reflection configuration etc.As aforementioned, photonic crystal and optical grating construction such as Fig. 4, (be used for to postpone and the concrete structure parameter of the photonic crystal of reflection function and grating device different) shown in Figure 5.Described micro-resonant cavity reflection configuration is comprised of a Mach-Zehnder interferometer and micro-resonant cavity structure as shown in Figure 8.Described Sagnac reflection configuration is the reflection configuration that utilizes Sagnac effect to realize, as shown in Figure 9, it will be inputted light by 1 * 2 coupling mechanism and be divided into and joining two bundle coherent lights transmit a week in opposite direction in same loop after, then in 1 * 2 coupling mechanism, produce and interfere, can control the reflectivity of Sagnac reflection configuration by the coupling coefficient of controlling 1 * 2 coupling mechanism.
Among the present invention, utilize optical waveguide different light delay structures can be connected from different reflection configuration, form multiple reflection type optical lag line.The below provides wherein several specific embodiments.Figure 10 is the little dish optical delay line of embodiment of the invention reflection-type synoptic diagram, and what its reflection configuration used is photon crystal device.Figure 11 is the little dish optical delay line of embodiment of the invention reflection-type synoptic diagram, and what its reflection configuration used is the micro-ring resonant cavity device.Figure 12 is embodiment of the invention reflection type optical grid delay line synoptic diagram, and what its reflection configuration used is photon crystal device.Figure 13 is embodiment of the invention reflection-type photon crystal lag line synoptic diagram, and what its reflection configuration used is photon crystal device.Figure 14 is the little ring of reflection-type limit coupled cascade (SCISSOR) variable optical delay line structural representation, and what its reflection configuration used is the Sagnac mirror device.Wherein, what micro-ring resonant cavity used is the track type structure, and what the three-dB coupler in the Sagnac reflection configuration used is multi-mode interference coupler.Carry out the doping of p-type or N-shaped by Implantation in the micro-ring resonant cavity, form the p-i-p knot, p-i-n knot, p-n junction, toe p-n junction etc.
Figure 15 shows that the delay spectral line when the little ring of embodiment of the invention reflection-type limit coupled cascade (SCISSOR) variable optical delay line integrated device does not have making alive, 13 little rings of cascade are wherein arranged, as can be seen from the figure, near optical communication carrier wavelength 1550nm commonly used maximum-delay is about 90ps, the about 170GHz of bandwidth of operation.Because fabrication error causes the resonance of little ring not mate, to compare with Theoretical Design, bandwidth of operation increases, and maximum-delay reduces.
Figure 16 shows that the delay spectral line of embodiment of the invention toe p-n junction reflection-type monocycle variable optical delay line integrated device under different adjustment voltage.As can be seen from the figure, the about 40ps of maximum-delay amount of this device, the about 6GHz of bandwidth.When reverse voltage is 3V, harmonic peak generation red shift, resonance wavelength changes a halfwidth (3GHz).
Figure 17 shows that the burst transmissions test result of the little ring of embodiment of the invention reflection-type limit coupled cascade (SCISSOR) variable optical delay line integrated device.Input optical pulse speed is 10Gbit/s among the embodiment, as seen from the figure, and poor the reaching about 150ps of input optical signal retardation of wavelength 1532.5nm and 1530.5nm.
Embodiment
In the present embodiment, adopt the electric adjustment structure of toe p-n, utilize the little ring variable optical delay line of standard CMOS process processing reflection-type at silicon-on-insulator (Silicon-On-Insulator, SOI).Duct width is 500nm, highly is 220nm, and slab-thickness is 60nm.The radius of the little ring of racetrack in the little ring of limit coupled cascade (SCISSOR) structure is 10 μ m, and coupled zone length is 16 μ m, and the coupling gap of waveguide and little ring is 0.25 μ m, and this design can guarantee that device is operated in the overcoupling zone.What adopt in the Sagnac reflection configuration is the 3dB multi-mode interference coupler, and its design size is that 5 μ m are wide, 23.5 μ m long.The employed doping content of p-type heavily doped region is 1 * 10 in the p-i-p thermal conditioning structure
20/ cm
3The heavy dopant concentration that toe p-n electricity adjustment structure is used is identical with the thermal conditioning structure, and light dope concentration is 1 * 10
15/ cm
3, the about 10 ~ 15Ohmcm of resistivity.Such as Figure 15 and shown in Figure 17, utilize the maximum-delay of the little ring variable delay line of reflection-type of 13 little rings formation of cascade to be 150ps, bandwidth is 170GHz.The about 40ps of maximum-delay amount of toe p-n junction reflection-type monocycle variable optical delay line, the about 6GHz of bandwidth, when adding reverse voltage and be 3V, resonance wavelength changes 3GHz, as shown in figure 16.
Above-mentioned processes process is compatible mutually with traditional semiconductor technology, is easy to processing, by design doped region and electrode, can make the reflection-type adjustable optic fibre lag line integrated device among the present invention finish the dynamically adjustable of light delay.
Claims (3)
1. reflection-type variable optical delay line, it is characterized in that, comprise that the series connection of light delay structure and light reflection structure consists of, the input end input of the described light delay structure of optical signals of input is inputted described light reflection structure after reflection after light delay, return again described light delay structure, again the light signal after the input end output time-delay of described light delay structure after described light delay structured light postpones.
2. reflection-type variable optical delay line according to claim 1, it is characterized in that described light delay structure is single micro-ring resonant cavity, little dish resonator cavity, grating, photonic crystal or is made of a plurality of described micro-ring resonant cavities, little dish resonator cavity, grating, photonic crystal cascade.
3. reflection-type variable optical delay line device according to claim 1 is characterized in that, described optical reflection structure is made of micro-resonant cavity, photonic crystal, grating or Sagnac-ring.
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| CN105527730A (en) * | 2016-01-06 | 2016-04-27 | 北京大学 | Optical phase modulator |
| WO2017028335A1 (en) * | 2015-08-17 | 2017-02-23 | 上海交通大学 | Ultra-wide-band all-optical radar system covering all wavebands |
| CN106685533A (en) * | 2017-03-01 | 2017-05-17 | 北方工业大学 | Adjustable optical pulse buffer |
| CN111158086A (en) * | 2020-01-20 | 2020-05-15 | 杭州洛微科技有限公司 | High-speed optical delay line chip and device |
| CN111399125A (en) * | 2020-05-12 | 2020-07-10 | 中国计量大学 | Adjustable optical delay line of silicon-based coupling waveguide and adjustable optical delay method |
| CN114614905A (en) * | 2022-04-08 | 2022-06-10 | 西南交通大学 | Multi-octave bandwidth MPL linear acquisition receiving chip based on spectrum shaping |
| CN116439639A (en) * | 2023-03-14 | 2023-07-18 | 之江实验室 | Endoscopic imaging system |
| CN117334761A (en) * | 2023-11-27 | 2024-01-02 | 之江实验室 | Reflection-type germanium-silicon avalanche photodetector |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2017028335A1 (en) * | 2015-08-17 | 2017-02-23 | 上海交通大学 | Ultra-wide-band all-optical radar system covering all wavebands |
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| CN111158086A (en) * | 2020-01-20 | 2020-05-15 | 杭州洛微科技有限公司 | High-speed optical delay line chip and device |
| CN111399125A (en) * | 2020-05-12 | 2020-07-10 | 中国计量大学 | Adjustable optical delay line of silicon-based coupling waveguide and adjustable optical delay method |
| CN114614905A (en) * | 2022-04-08 | 2022-06-10 | 西南交通大学 | Multi-octave bandwidth MPL linear acquisition receiving chip based on spectrum shaping |
| CN114614905B (en) * | 2022-04-08 | 2023-07-14 | 西南交通大学 | Multi-octave bandwidth MPL linearization acquisition receiving chip based on spectrum shaping |
| CN116439639A (en) * | 2023-03-14 | 2023-07-18 | 之江实验室 | Endoscopic imaging system |
| CN116439639B (en) * | 2023-03-14 | 2024-01-09 | 之江实验室 | Endoscopic imaging system |
| CN117334761A (en) * | 2023-11-27 | 2024-01-02 | 之江实验室 | Reflection-type germanium-silicon avalanche photodetector |
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Application publication date: 20130424 |