CN105527730A - Optical phase modulator - Google Patents
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- CN105527730A CN105527730A CN201610008172.2A CN201610008172A CN105527730A CN 105527730 A CN105527730 A CN 105527730A CN 201610008172 A CN201610008172 A CN 201610008172A CN 105527730 A CN105527730 A CN 105527730A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 44
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- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000003780 insertion Methods 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract description 2
- 230000010363 phase shift Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000000985 reflectance spectrum Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
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- 230000005374 Kerr effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an optical phase modulator which is characterized by comprising a sub-wavelength grating, wherein the sub-wavelength grating is connected with a refractive index adjusting device which is used for adjusting the refractive index of a strip medium. A guided mode resonant effect enables the grating to have a high quality factor resonance characteristic; the reflecting spectrum or transmission spectrum of the grating generates a sharp resonant peak. When the grating generates a high quality factor resonance, the bandwidth of the spectrum is narrowest, the slope of a phase curve is maximum, and the change of the phase is strongest. Therefore, in order to obtain the phase modulator with high sensitivity and high speed, phase is modulated by using the high quality factor resonance characteristic of the grating. The optical phased array disclosed by the invention is compact in size and convenient to integrate optical elements, and has the characteristics of high sensitivity, high speed, large phase moving range and small insertion loss.
Description
Technical field
The present invention relates to a kind of phase-modulator based on grating.This device belongs to optical engineering field, is mainly used in the fields such as optical communication, optical signal prosessing, light sensing and optical device be integrated.
Background technology
Optical phase modulator is that the phase place of light wave is changed according to certain rules, realizes the device of optical modulation.Therefore, optical phase modulator is in field has widely the application such as optical communication, optical signal prosessing and optical device be integrated.Perfect further along with optical theories such as Mode Coupling, and the continuous progress of optical planar waveguide technology, people can realize optical phase at a high speed and control.
At present, optical phase modulator mainly contains based on the phase-modulator of waveguide electro-optic modulation and the phase-modulator based on machinery modulation.Phase-modulator based on waveguide electro-optic modulation utilizes the electrooptical effect of medium, changes the pattern in waveguide, thus the phase place of output light is changed, reach the object of phase-modulation.(C.K.tanget.al., ELECTRONICSLETTERS, 1995, Vol.31, No.6, pp451-452) is a kind of typically based on the phase-modulator of waveguide electro-optic modulation, and its structure as shown in Figure 1.
This is that in the middle of one, doping is perpendicular to the ridge waveguide of paper, and the object of doping is the refractive index utilizing electrooptical effect to change silicon.Because silicon does not steep Ke Ersi effect, Kerr effect is also very faint, so need to utilize the method increasing carrier concentration to change refractive index, has:
Δn＝-8.8×10
-22ΔN
e-8.5×10
-18(ΔN
h)
0.8
Δα＝8.5×10
-18ΔN
e+8.5×10
-18ΔN
h 0.8
Δ n in formula, Δ α, Δ N
e, Δ N
hrepresent refractive index respectively, absorption coefficient, the knots modification of electron concentration and hole concentration.As can be seen from the above equation, along with the corresponding absorption coefficient of change of refractive index also can increase.Meanwhile, also have electric current when change refractive index to pass through.Therefore, the phase-modulator based on waveguide electro-optic modulation has larger power consumption.And utilize machinery modulation method to change light path based on the phase-modulator of machinery modulation, reach the object of phase-modulation.This phase-modulator based on machinery modulation is generally divided into two kinds: one is piezoelectric ceramics (PZT) phase-modulator, and the feature of this phase-modulator is that loss is little, but has that volume is large, the shortcoming of poor stability; Another kind is MEMS (micro electro mechanical system) (MEMS) phase-modulator, (Jin-ChernChiouet.al., IEEEJOURNALOFQUANTUMELECTRONICS, 2010, Vol.46, No.9, pp1301-1308) be a kind of typically based on the phase-modulator of machinery modulation.When after the charging of this MEMS (micro electro mechanical system) phase-modulator, catoptron above can produce change in displacement, and then produces the change on light path for reflected light, reaches the object of phase-modulation.The feature of this modulator is that volume is little.But the phase-modulator subject matter based on machinery modulation adopts machinery modulation, due to problems such as inertia, want slow a lot of compared to electrooptical modulation speed, be not suitable for High Speed Modulation system.
Summary of the invention
For existing optical phase modulator Problems existing, the present invention proposes a kind of optical phase modulator based on grating.
Technical scheme of the present invention is:
A kind of optical phase modulator, is characterized in that, comprise a sub-wave length grating; This sub-wave length grating and one regulates the adjustable refractive index device of the refractive index of described strip medium to be connected.
Further, described adjustable refractive index device is a kind of adjustable refractive index device of the refractive index by strip medium described in electrooptical modulation.
Further, described strip medium two ends are provided with P level and N level; Wherein, described strip medium perpendicular to P level and N level, and forms p-i-n diode structure with p pole, N pole.
Further, described strip medium both sides are provided with P level and N level; Wherein, described strip medium is parallel to P level and N level, and forms p-i-n diode structure with p pole, N pole.
Further, described adjustable refractive index device is a kind of adjustable refractive index device being regulated the refractive index of described strip medium by thermo-optical.
Further, described adjustable refractive index device is a kind of adjustable refractive index device being regulated the refractive index of described strip medium by acousto-optic.
Further, described adjustable refractive index device is a kind of adjustable refractive index device being regulated the refractive index of described strip medium by stress.
Grating in the present invention is a kind of novel sub-wave length grating, and it has strong restriction for the interaction between plane wave electromagnetic field.According to guided mode resonance effect, make grating have high quality factor resonance characteristic, its reflectance spectrum or transmission spectrum can produce sharp-pointed harmonic peak.When grating produces high quality factor resonance, spectral bandwidth is the narrowest, and the slope of phase curve is maximum, and phase place change is the most violent.So, in order to obtain high sensitivity and phase-modulator at a high speed, utilize the high quality factor resonance characteristic of grating to carry out phase-modulation.By designing and optimizing centre wavelength and the bandwidth that the parameter such as screen periods and grating dutycycle comparatively can be satisfied with high quality factor resonance.Meanwhile, the centre wavelength due to spectral resonance peak depends primarily on the refractive index of medium, and the change of spectral resonance peak center wavelength can cause the phase shift of harmonic peak spectrum.Therefore, adopt the electrooptical modulation such as carrier injection, the mode such as thermo-optic modulation and acoustooptic modulation changes the refractive index of medium, thus reaches the object of phase-modulation.
Fig. 2 is raster phase modulation example figure, and the bandwidth of spectrum is 4.4pm.When the refractive index of medium only increases by 1.0 × 10
-5time, the about mobile 3.8pm of centre wavelength, about 1.25 π of phase shifts.
Compared with existing technical scheme, good effect of the present invention is:
The present invention is the phase-modulator based on grating high quality factor resonance characteristic, and first, size closely, is convenient to optical device integrated; Secondly, there is high sensitivity and high-speed feature, be beneficial to optical communication field; Further, phase shifts scope is large; And insertion loss is little; Finally, well make tolerance because grating has, optical phase modulator makes relatively simple.
Accompanying drawing explanation
Fig. 1 is typically based on the phase-modulator of waveguide electro-optic modulation;
Fig. 2 is raster phase modulation example figure (DC=0.329, t
g=0.228 μm, Λ=0.98 μm, θ=0.1 °);
A () represents the grating transmission spectrum under different graing lobe refractive index, (b) represents the phase propetry of corresponding grating transmission spectrum;
Fig. 3 is optical grating construction figure;
Fig. 4 is grating typical light spectrogram (η=0.45, t
g=0.22 μm, n
d=3.48, Λ=1 μm, θ=2 °);
Fig. 5 is the phase propetry of grating;
A () represents the optical grating reflection spectrum of broader bandwidth, (b) represents the phase propetry of broader bandwidth optical grating reflection spectrum,
C () represents the narrower optical grating reflection spectrum of bandwidth, (d) represents the phase propetry of the narrower optical grating reflection spectrum of bandwidth;
Fig. 6 is electric light raster phase modulator;
A () figure P pole and N pole are perpendicular to graing lobe, (b) figure P pole and N pole are parallel to graing lobe;
Fig. 7 is the optical phase modulator utilizing reflected light;
A () represents the optical grating reflection spectrum under the refractive index of different high refractive index medium, (b) represents the phase propetry of its correspondence;
Fig. 8 is the optical phase modulator utilizing transmitted light;
A () represents the grating transmission spectrum under different high refractive index medium refractive index, (b) represents the change of its corresponding phase place.
Embodiment
This grating is a kind of novel optical texture device, and its structure as shown in Figure 3.Five important parameters affecting grating are screen periods (Λ), grating thickness (t
g), dutycycle (η), graing lobe refractive index (n
d) and air layer refractive index (n
0).Meanwhile, optical grating construction is simple, very large to the fault tolerance made.Therefore, the manufacture craft of grating is simple, not fragile.
This grating has strong restriction for the interaction between plane wave electromagnetic field.Therefore, grating is regarded as a resonator, namely can regard a little resonator cavity between each high refractive index medium and air as, can produce high quality factor (Q) resonance, its reflectance spectrum or transmission spectrum can produce sharp-pointed harmonic peak.We utilize guided mode resonance effect to analyze it.Guided mode resonance effect refers to intercoupling between the pattern in the diffractional field of external communication and waveguide.Dielectric grating is regarded as the thin-film waveguide of refractive index through ovennodulation, in such grating, just there is guided mode.According to diffraction conditions, electromagnetic wave propagation constant is:
β
i＝k
0sinθ+2iπ/Λ
Wherein i is arbitrary integer.If it is identical with the propagation constant of guided mode that these propagation constants have, then incident light can be coupled in the guided mode of waveguide.Like this, two guided modes that wave number is identical, the direction of propagation is contrary can be there are in grating.Because grating is a kind of sub-wave length grating, its screen periods much smaller than incident wavelength, during except i=0, β
iabsolute value all can be greater than k
0, so the diffracted wave of high-order is all just evanescent wave.Therefore, main in grating exist two guided modes that wave number is identical, transmission direction is contrary.If two guided mode phase places are identical, will cause interfering long mutually, produce low-quality factor resonances.On the contrary, if two guided mode phase places are contrary, interference will be caused to disappear mutually, produce high quality factor resonance.When grating is symmetrical relative to vertical axis, when the field pattern of two guided modes is identical, interfere the generation that disappears mutually completely, there is no energy leakage in air layer.So in theory, under infinite period, the high quality factor resonance of this pattern is unlimited, and live width is very narrow.As Fig. 4, the grating high quality factor resonance exemplary spectrum utilizing rigorous coupled wave algorithm (RCWA) to obtain.Although in reality, due to reasons such as grating limit cycle, asymmetry, high quality factor resonance is limited, the size of the quality factor resonance of grating is enough to for carrying out phase-modulation.
The reflectance spectrum of mode of resonance and transmission spectrum can be described to the form of Lorentzian, that is:
Wherein, λ
0centre wavelength,
the phase place of centre wavelength, | ω | be half-wave overall with.As shown in Figure 5, utilize rigorous coupled wave algorithm (RCWA), can find out that the change that phase place is violent only occurs in the region of guided mode resonance, and under similar parameter, the knots modification of phase place is substantially constant.
Therefore, grating spectrum bandwidth is narrower, and phase place change Shaoxing opera is strong.And during grating generation high quality factor resonance, spectral bandwidth is the narrowest, and the slope of phase curve is maximum, phase place change is the most violent.So in order to obtain highly sensitive phase-modulator, we utilize the high quality factor resonance characteristic of grating to carry out phase-modulation.
According to guided mode resonance effect characteristic, on the one hand, when incident angle increases, the guided mode mode of resonance of non-leakage can reduce, and bandwidth can increase.In addition, the finite length of grating and fabrication error all can reduce high quality factor resonance.On the other hand, screen periods also can affect centre wavelength.By designing and optimizing these parameters, we can obtain satisfied centre wavelength and bandwidth.
Meanwhile, utilize rigorous coupled wave algorithm (RCWA), our numerical analysis finds that the centre wavelength at spectral resonance peak depends primarily on the refractive index of medium, and namely when graing lobe medium refraction index increases, the centre wavelength at spectral resonance peak also can increase.For silica-based grating, when refraction index changing 0.001, centre wavelength changes 0.4nm.Meanwhile, centre wavelength d λ
0change can cause the reflected light of resonance peaks or the phase shift of transmitted light or loss, equation is:
Therefore, loss can be written as:
If phase shift is
phase shift can be obtained fom the above equation
and loss
the loss of spectrum is the quadratic power of phase shift.
Therefore, as long as change the refractive index of graing lobe medium, just can change the phase place of emergent light, thus reach the object of phase-modulation.The refractive index mode of conventional change graing lobe medium has three kinds, is electrooptical modulation, thermo-optic modulation, acoustooptic modulation and stress modulation respectively.Electrooptical modulation utilizes extra electric field to change the characteristics of motion of electronics or the crystal structure of material in atom or molecule, and the change of the medium refraction index caused, conventional method has carrier injection method, carrier accumulation method and carrier depletion method etc.As shown in Fig. 6 (a) (b), grating and p pole, N pole forms p-i-n diode structure.Utilize carrier injection method, PN junction adds electrode, by the concentration of the change carrier injection of electric field, (a) figure P pole and N pole are perpendicular to graing lobe.Graing lobe medium carrier concentration is changed along with being changed by substrate carrier concentration, and (b) figure P pole and N pole are parallel to graing lobe, and electric field directly can change graing lobe medium carrier concentration.Recycling plasma dispersion effect changes high refractive index medium refractive index, finally owing to changing high refractive index medium refractive index, and then changes the position of grating spectrum centre wavelength, then according to the relation of centre wavelength and phase place, reaches the effect of phase-modulation.But raster phase modulator is not only confined to above-mentioned electrooptical modulation method, its central idea changes high refractive index medium refractive index exactly, thus reaches the object of phase-modulation.Therefore, as long as the modulator approach that can change high refractive index medium refractive index is all feasible.So raster phase modulator also can adopt the method for thermo-optical or acoustooptic modulation.Thermo-optic modulation adopts temperature different, and its molecule or crystal structure change, thus causes the optical property of material different, and then changes the refractive index of medium.Such as, temperature rising can cause material expansion and polarization, very little the thermal expansivity opposite polarisation coefficient of grating graing lobe medium (as silicon) material, and graing lobe medium refraction index affects larger by material polarization.Therefore, utilize temperature change graing lobe medium refraction index and then reach the object of phase-modulation.Acoustooptic modulation makes sound wave by causing the Local Contraction of medium or elongation during medium and producing elastic strain, and this strain does cyclical variation with space in time, thus the refractive index of medium changes.Such as, graing lobe medium under ul-trasonic irradiation can be considered a kind of phase grating formed by sound wave, the pitch (grating constant) of its grating is wave length of sound, when sound wave is by phase grating, cause the elastic strain of VPG medium, and then change grating graing lobe refractive index, reach the object of phase-modulation.Stress modulation utilizes stress to make medium produce flexible and elasto-optical effect, thus the refractive index of medium changes.Such as, under effect of stress, the cycle of grating produces flexible and elasto-optical effect, causes the change of grating graing lobe refractive index, reaches the object of phase-modulation.
By said method, enumerate the design example of raster phase modulator reflected light and transmitted light.
(1) reflective phase modulator:
As shown in Figure 7, the optical phase modulator of reflected light uses one deck grating to reflect, and during refraction index changing 0.0002, loss is the phase shift that 0.47dB obtains 0.53 radian.If the phase shifter of a design π radian needs to carry out six secondary reflections, total losses are 2.82dB.If change the change of refractive index into 0.0001, then total loss can be reduced to 1.41dB.In a bandwidth, the knots modification of phase place is about 1, can calculate bandwidth maximum time Δ λ and bandwidth be all 0.0318nm.Meanwhile, can see that the fastest place of reflection wave phase place change is the place that reflectivity is the highest, so be relatively applicable to being used for phase converter.
(2) transmitted light phase-modulator
Transmitted light phase-modulator light path is fairly simple, but there is the not easily matching of transmitted light spectrum, be not easy to do qualitatively analyze and transmitted light phase place change the most violent place be just in time the place that transmissivity is minimum, the shortcoming that sensitivity is slightly poor.
As shown in Figure 8, the parameter of this phase converter is DC=0.5, period=0.62 μm, tg=0.34 μm, θ=5 °, nd=3.6.The knots modification of refractive index is 0.001.Its phase shift is 0.303rad, and loss is 0.097dB, and the phase shift reaching π radian needs 11 sheet grations.Total loss is 1.07dB, and three dB bandwidth is 0.031nm.
Claims (7)
1. an optical phase modulator, is characterized in that, comprises a sub-wave length grating; This sub-wave length grating and one regulates the adjustable refractive index device of the refractive index of described strip medium to be connected.
2. optical phase modulator as claimed in claim 1, it is characterized in that, described adjustable refractive index device is a kind of adjustable refractive index device of the refractive index by strip medium described in electrooptical modulation.
3. optical phase modulator as claimed in claim 2, it is characterized in that, described strip medium two ends are provided with P level and N level; Wherein, described strip medium perpendicular to P level and N level, and forms p-i-n diode structure with p pole, N pole.
4. optical phase modulator as claimed in claim 2, it is characterized in that, described strip medium both sides are provided with P level and N level; Wherein, described strip medium is parallel to P level and N level, and forms p-i-n diode structure with p pole, N pole.
5. optical phase modulator as claimed in claim 1, it is characterized in that, described adjustable refractive index device is a kind of adjustable refractive index device being regulated the refractive index of described strip medium by thermo-optical.
6. optical phase modulator as claimed in claim 1, it is characterized in that, described adjustable refractive index device is a kind of adjustable refractive index device being regulated the refractive index of described strip medium by acousto-optic.
7. optical phase modulator as claimed in claim 1, it is characterized in that, described adjustable refractive index device is a kind of adjustable refractive index device being regulated the refractive index of described strip medium by stress.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080106789A1 (en) * | 2006-10-23 | 2008-05-08 | Hideaki Hirai | Optical element and optical device |
| WO2011106551A2 (en) * | 2010-02-24 | 2011-09-01 | The Regents Of The University Of California | Hcg reflection enhancement in diverse refractive index material |
| TW201137402A (en) * | 2010-04-13 | 2011-11-01 | Hewlett Packard Development Co | Controlling phase response in a sub-wavelength grating optical device |
| CN103048715A (en) * | 2013-01-04 | 2013-04-17 | 南京邮电大学 | Planar sub-wavelength aperiodic high-contrast grating and preparation method thereof |
| CN103064199A (en) * | 2012-12-10 | 2013-04-24 | 上海交通大学 | Reflection-type adjustable light delay line |
| CN103532009A (en) * | 2012-07-05 | 2014-01-22 | Jds尤尼弗思公司 | Tunable bragg grating and tunable laser diode using same |
-
2016
- 2016-01-06 CN CN201610008172.2A patent/CN105527730A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080106789A1 (en) * | 2006-10-23 | 2008-05-08 | Hideaki Hirai | Optical element and optical device |
| WO2011106551A2 (en) * | 2010-02-24 | 2011-09-01 | The Regents Of The University Of California | Hcg reflection enhancement in diverse refractive index material |
| TW201137402A (en) * | 2010-04-13 | 2011-11-01 | Hewlett Packard Development Co | Controlling phase response in a sub-wavelength grating optical device |
| CN103532009A (en) * | 2012-07-05 | 2014-01-22 | Jds尤尼弗思公司 | Tunable bragg grating and tunable laser diode using same |
| CN103064199A (en) * | 2012-12-10 | 2013-04-24 | 上海交通大学 | Reflection-type adjustable light delay line |
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| Title |
|---|
| HANXING ZHANG等: "Phase Shifter Design based on Guided-Mode Resonance in High-Contrast Grating", 《ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP2013)&INTERNATIONAL CONFERENE ON INFORMATION PHOTONICS AND OPTICAL COMMUNICATIONS(2013)》 * |
| LI ZHU等: "Quality Factor for High Contrast Grating Resonators", 《IEEE》 * |
| YE ZHOU等: "A novel ultra-low loss hollow-core waveguide using subwavelength high-contrast gratings", 《OPTICS EXPRESS》 * |
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Application publication date: 20160427 |