CN103050888A - Manufacture method for grating and chip of DFB (distributed feedback) laser device - Google Patents
Manufacture method for grating and chip of DFB (distributed feedback) laser device Download PDFInfo
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- CN103050888A CN103050888A CN2013100086968A CN201310008696A CN103050888A CN 103050888 A CN103050888 A CN 103050888A CN 2013100086968 A CN2013100086968 A CN 2013100086968A CN 201310008696 A CN201310008696 A CN 201310008696A CN 103050888 A CN103050888 A CN 103050888A
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- inp
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Abstract
The invention discloses a manufacture method for a grating and a chip of a DFB (distributed feedback) laser device. When the grating of the DFB laser device is manufactured, a grating layer structure is provided with two P-InP layers and a P-InGaAsP layer which is arranged between the two P-InP layers, photoresist for the grating is firstly coated outside a top-end P-InP layer, and after the top-end P-InP layer is dried, holographic exposure and developing are carried out, a uniform grating is manufactured; then corrosion liquid formed by HC1, H3PO4 and H2O is used for corroding one P-InP layer; corrosion liquid formed by H2SO4, H2O2 and H2O is used for corroding the P-InGaAsP layer; and finally the photoresist is removed to obtain the grating for the DFB laser device. According to the sandwich grating structural design and the selective corrosion of two kinds of materials of InGaAsP/InP, the uniform grating with the same depth can be obtained. According to the manufacture method, the manufacture cost is low, the uniformity of the grating is excellent, the rate of finished products for the DFB laser device is high, and the requirement for large-scale production is facilitated.
Description
Technical field
The present invention relates to the photoelectron technology field, be specifically related to the manufacture method of a kind of Distributed Feedback Laser grating and chip.
Background technology
Because the stable dynamic single longitudinal mode characteristics of InP base Distributed Feedback Laser make it be widely used in the optical fiber communication ballistic device.The cycle is that the optical grating construction of 180～250nm is selected wavelength in the InP base Distributed Feedback Laser, obtains the stable dynamic single longitudinal mode of 1.2 ~ 1.7 μ m.Wherein preparing grating quality and uniformity directly affect Distributed Feedback Laser performance and rate of finished products.
Traditional preparing grating method is as follows: apply photoresist or PMMA at epitaxial wafer, obtain figure by holographic exposure method and E-beam exposure method.Then carry out wet etching by bromic acid series corrosive liquid, perhaps adopt RIE or ICP equipment to carry out dry etching, figure is transferred on the substrate slice, form grating.The major parameter that affects grating quality is the degree of depth and duty ratio, and affects the uniformity that also has preparing grating of Distributed Feedback Laser rate of finished products.
The advantage of E-beam exposure method is to make all even non-homogeneous gratings, but high expensive, and manufacturing speed is slow, is difficult to do cheaply Distributed Feedback Laser chip.
Holographic exposure is used for making uniform grating, and cost of manufacture is low, and manufacturing speed is fast, is widely used in making low and middle-end Distributed Feedback Laser chip.
Traditional wet etching generally adopts the aqueous corrosion grating of hydrobromic acid and bromine, and this corrosive liquid does not have selectivity to InP/InGaAsP, and the grating degree of depth can only be controlled by etching time, and the uniformity of wet etching is also relatively poor.Compared with wet etching, dry etching can the more accurate control grating degree of depth, and uniformity is also better, but comparison in equipment is expensive, and cost of manufacture is higher.And still there is inhomogeneity problem between sheet and the sheet.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of manufacture method of Distributed Feedback Laser grating.
The manufacture method of this Distributed Feedback Laser grating, the grating layer structure is two-layer P-InP layer therebetween one deck P-InGaAsP layer during making; First outside the P-InP layer of top, apply grating with photoresist, carry out holographic exposure after the drying, develop, be made into uniform grating; Then use HCl, H
3PO
4And H
2The corrosive liquid that O forms erodes the P-InP layer; Use again H
2SO
4, H
2O
2And H
2The corrosive liquid that O forms erodes the P-InGaAsP layer; Remove at last photoresist, obtain the Distributed Feedback Laser grating.
In the said method, described holographic exposure, development all can be used prior art, for example adopt 300～400nm Ultra-Violet Laser light source to expose, and use that the immersion of alkalescent developer solution is developed etc., can make photoresist form the convex-concave structure of some cycles, be made into uniform grating.The present invention is for HCl, H
3PO
4And H
2The corrosive liquid that O makes, and H
2SO
4, H
2O
2And H
2Each constituent concentration of the corrosive liquid that O forms and amount ratio can be prepared arbitrarily without limits as required, the concentration that they are different and affect corrosion rate than regular meeting.Described holographic exposure light source is preferably 300～400nm Ultra-Violet Laser light source.
Preferably, the thickness of described P-InP layer is 25 ~ 100nm.
Preferably, the thickness of described P-InGaAsP layer is 15 ~ 50nm.
Preferably, the thickness of described photoresist is 40～100nm.
The present invention also protects the Distributed Feedback Laser grating of said method preparation.
The present invention also provides a kind of preparation method of Distributed Feedback Laser chip, and step is as follows:
(1) epitaxial growth: on the N-InP substrate layer, grow successively N-InP resilient coating, N-InGaAsP limiting layer, MQW active layer and P-InGaAsP limiting layer;
(2) preparing grating: continue to grow successively P-InP layer, P-InGaAsP layer and P-InP layer on the P-InGaAsP limiting layer; At top P-InP layer coating grating with photoresist, carry out holographic exposure after the drying, develop, make uniform grating; Products obtained therefrom HCl and H
3PO
4The corrosive liquid corrosion P-InP layer of making; Continue to use H
2SO
4, H
2O
2And H
2The corrosive liquid corrosion P-InGaAsP layer that O forms; Products obtained therefrom boils to remove photoresist with acetone;
(3) secondary epitaxy growth: step (2) products obtained therefrom is finished the Distributed Feedback Laser epitaxy technique at the P-InGaAs ohmic contact layer of grating layer direction continued growth P-InP layer and doping of Zn;
(4) finish the making of ridge waveguide, wide 1.5 ~ 2.5 μ m of ridge;
(5) growth SiO
2Insulating barrier, and open electric current at ridge and inject window;
(6) finishing p side electrode makes;
(7) with behind the epitaxial wafer attenuate, finish N face electrode fabrication.
Preferably, the thickness of the described P-InP layer of described step (2) is 25 ~ 100nm; The thickness of described P-InGaAsP layer is 15 ~ 50nm.
Preferably, the thickness of the described photoresist of described step (2) is 40～100nm.
Preferably, the P-InGaAs ohmic contact layer of the described doping of Zn of described step (3), the doping content of Zn is greater than 1 * 10
19/ cm
3
The present invention also protects the Distributed Feedback Laser chip of above-mentioned preparation method's preparation.
The present invention has following beneficial effect:
Selective corrosion by this sandwich optical grating construction design and InGaAsP/InP bi-material can obtain the consistent uniform grating of the degree of depth cheaply.With traditional Distributed Feedback Laser preparing grating method by comparison, the inventive method cost of manufacture is low, the high conformity of grating high conformity, particularly sheet and sheet, the Distributed Feedback Laser rate of finished products is high, is beneficial to the needs of large-scale production.
Description of drawings
Fig. 1. Distributed Feedback Laser epitaxial wafer basic structure, wherein epitaxially grown layer of 1 expression comprises: N-InP substrate, N-InP resilient coating, N-InGaAsP limiting layer, MQW active layer, P-InGaAsP limiting layer, the not etched grating layer of 2 expressions from bottom to up;
Fig. 2. not etched grating layer structural representation (be shown in Figure 1 2), wherein 3 is the P-InP layer, 4 expression P-InGaAsP layers, 5 expression P-InP layers;
Fig. 3. once epitaxially grown layer applies the photoresist schematic diagram, and 6 expression gratings are layer with photoresist;
Fig. 4. schematic diagram behind the photoresist exposure imaging, the photoresist that 6 expressions stay;
Fig. 5. with HCl and H
3PO
4Corrosive liquid corrosion after schematic diagram;
Fig. 6. use H
2SO
4, H
2O
2And H
2Schematic diagram after the corrosive liquid corrosion that O forms;
Fig. 7. remove with photoresist rear schematic diagram of grating;
Fig. 8. grating is buried rear epitaxial slice structure schematic diagram, and wherein 7 is the P-InP layer, and 8 is the P-InGaAs ohmic contact layer.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments, can be implemented so that those skilled in the art can better understand the present invention also, but illustrated embodiment is not as a limitation of the invention.
1. adopt MOCVD equipment, growth InGaAsP strain compensation limits respectively Multiple Quantum Well (SCH-MQW) structure extension sheet.With MOVCD(Metal-Organic Chemical Vapor Deposition, metal organic chemical vapor deposition) epitaxy method is at N-InP Grown N-InP resilient coating, N-InGaAsP difference limiting layer, the MQW active layer, P-InGaAsP is limiting layer respectively, and P-InP layer (thickness is 100nm), P-InGaAsP layer (thickness is 30nm), and P-InP layer (thickness is 100nm).At the P-InP of epitaxial wafer layer coating grating with photoresist, 90 ℃ were toasted 1 minute, and obtained the epitaxial wafer with photoresist.
2. will carry out holographic exposure with 325nm Ultra-Violet Laser light source with the epitaxial wafer of photoresist, and then use the alkalescent developer solution to soak and developed in 10 ~ 50 seconds, making the photoresist formation cycle is the convex-concave structure of 180 ~ 250nm.
3. step 2 gained epitaxial wafer was toasted 3 minutes under 120 ℃ condition.
4. the epitaxial wafer HCl after will toasting, H
3PO
4And H
2Corrosive liquid corrosion (the volume ratio HCl:H that O forms
3PO
4: H
2O is 1:1:10), make mask with remaining photoresist layer, corrosion P-InP layer under the room temperature, the control corrosion rate, about 10 ~ 20nm/min, after finishing as shown in Figure 5.
5. the epitaxial wafer H that step 4 is obtained
2SO
4: H
2O
2: H
2O corrosive liquid corrosion (volume ratio H
2SO
4: H
2O
2: H
2O is 1:1:20), with 5(P-InP layer shown in Figure 5) figure make mask, corrosion P-InGaAsP layer under the room temperature, the control corrosion rate, about 10 ~ 20nm/min, after finishing as shown in Figure 6.
6. the epitaxial wafer after will corroding boiled 10 minutes with the acetone heating, removed photoresist.After finishing as shown in Figure 7.
7. the epitaxial wafer of step 6 being finished buries P-InP with mocvd method and highly doped (mix Zn, doping content is greater than 1 * 10
19/ cm
3) P type InGaAs ohmic contact layer.As shown in Figure 8.
8. finish the ridge waveguide manufacture craft, the wide 1.8 μ m of ridge.
9. SiO grows
2Insulating barrier, thickness 300nm, and SiO on the corrosion ridge
2Insulating barrier forms the electric current injection channel.
10. finish p side electrode and make, electrode material and thickness are: Ti 50nm/Pt 80nm/Au 200nm.
11. be 100 μ m with the epitaxial wafer thinning back side, make again N face electrode, electrode material and thickness are: Ti 50nm/Pt 80nm/Au 100nm.
12. cleavage, plated film is finished the Distributed Feedback Laser chip manufacturing.
It is consistent to obtain the degree of depth by manufacture method of the present invention, the good optical grating construction of uniformity, and the Distributed Feedback Laser chip yield of making is high, high conformity.
Make the epitaxial wafer of other two groups of band photoresists, wherein first group of P-InP layer thickness is 25nm, and the P-InGaAsP layer thickness is 50nm, and the P-InP layer thickness is 70nm; Second group of P-InP layer thickness is 60nm, and the P-InGaAsP layer thickness is 15nm, and the P-InP layer thickness is 40nm.Other operations are with embodiment 1.The result shows gained optical grating construction good uniformity, and the Distributed Feedback Laser chip yield is high.
More than the Distributed Feedback Laser chip yield finished of two embodiment reach 40 ~ 50%, be higher than the rate of finished products of industry Distributed Feedback Laser chip 30% far away.
The above embodiment is the preferred embodiment that proves absolutely that the present invention lifts, and protection scope of the present invention is not limited to this.Being equal to that those skilled in the art do on basis of the present invention substitutes or conversion, all within protection scope of the present invention.Protection scope of the present invention is as the criterion with claims.
Claims (10)
1. the manufacture method of a Distributed Feedback Laser grating is characterized in that, the grating layer structure is two-layer P-InP layer therebetween one deck P-InGaAsP layer during making; First outside the P-InP layer of top, apply grating with photoresist, carry out holographic exposure after the oven dry, develop, be made into uniform grating; Then use HCl, H
3PO
4And H
2The corrosive liquid that O forms erodes the P-InP layer; Use again H
2SO
4, H
2O
2And H
2The corrosive liquid that O forms erodes the P-InGaAsP layer; Remove at last photoresist, obtain the Distributed Feedback Laser grating.
2. the manufacture method of Distributed Feedback Laser grating according to claim 1 is characterized in that, the thickness of described P-InP layer is 25 ~ 100nm.
3. the manufacture method of Distributed Feedback Laser grating according to claim 1 is characterized in that, the thickness of described P-InGaAsP layer is 15 ~ 50nm.
4. the manufacture method of Distributed Feedback Laser grating according to claim 1 is characterized in that, the thickness of described photoresist is 40～100nm.
5. the Distributed Feedback Laser grating of the described method of claim 1 ~ 4 preparation.
6. the preparation method of a Distributed Feedback Laser chip is characterized in that, step is as follows:
(1) epitaxial growth: on the N-InP substrate layer, grow successively N-InP resilient coating, N-InGaAsP limiting layer, MQW active layer and P-InGaAsP limiting layer;
(2) preparing grating: continue to grow successively P-InP layer, P-InGaAsP layer and P-InP layer on the P-InGaAsP limiting layer; At top P-InP layer coating grating with photoresist, carry out holographic exposure after the drying, develop, make uniform grating; Products obtained therefrom HCl, H
3PO
4And H
2The corrosive liquid corrosion P-InP layer that O forms; Continue to use H
2SO
4, H
2O
2And H
2The corrosive liquid corrosion P-InGaAsP layer that O forms; Products obtained therefrom boils to remove photoresist with acetone;
(3) secondary epitaxy growth: step (2) products obtained therefrom is finished the Distributed Feedback Laser epitaxy technique at the P-InGaAs ohmic contact layer of grating layer direction continued growth P-InP layer and doping of Zn;
(4) finish the making of ridge waveguide, wide 1.5 ~ 2.5 μ m of ridge;
(5) growth SiO
2Insulating barrier, and open electric current at ridge and inject window;
(6) finishing p side electrode makes;
(7) with behind the epitaxial wafer attenuate, finish N face electrode fabrication.
7. the preparation method of Distributed Feedback Laser chip according to claim 6 is characterized in that, the thickness of the described P-InP layer of step (2) is 25 ~ 100nm; The thickness of described P-InGaAsP layer is 15 ~ 50nm.
8. the preparation method of Distributed Feedback Laser chip according to claim 6 is characterized in that, the thickness of the described photoresist of step (2) is 40～100nm.
9. the preparation method of Distributed Feedback Laser chip according to claim 6 is characterized in that, the P-InGaAs ohmic contact layer of the described doping of Zn of step (3), and the doping content of Zn is greater than 1 * 10
19/ cm
3
10. the Distributed Feedback Laser chip of the arbitrary described preparation method preparation of claim 6 ~ 9.
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|---|---|---|---|
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|---|---|---|---|
| CN2013100086968A CN103050888A (en) | 2013-01-10 | 2013-01-10 | Manufacture method for grating and chip of DFB (distributed feedback) laser device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107732655A (en) * | 2017-10-24 | 2018-02-23 | 武汉光安伦光电技术有限公司 | A kind of Distributed Feedback Laser part preparing grating method |
| CN112636168A (en) * | 2020-12-19 | 2021-04-09 | 全磊光电股份有限公司 | Preparation method of high-performance DFB laser epitaxial wafer |
| CN114777695A (en) * | 2022-04-15 | 2022-07-22 | 河南仕佳光子科技股份有限公司 | Method for accurately measuring top layer thickness of InP-based laser |
Citations (2)
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|---|---|---|---|---|
| CN1945910A (en) * | 2006-09-08 | 2007-04-11 | 中国科学院上海微系统与信息技术研究所 | Method for preparing wave guide and grating structure of adjustable distributive feedback quantum cascade laser and above said grating |
| CN102771022A (en) * | 2010-02-26 | 2012-11-07 | Ntt电子股份有限公司 | Ridge semiconductor laser and method for manufacturing a ridge semiconductor laser |
-
2013
- 2013-01-10 CN CN2013100086968A patent/CN103050888A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945910A (en) * | 2006-09-08 | 2007-04-11 | 中国科学院上海微系统与信息技术研究所 | Method for preparing wave guide and grating structure of adjustable distributive feedback quantum cascade laser and above said grating |
| CN102771022A (en) * | 2010-02-26 | 2012-11-07 | Ntt电子股份有限公司 | Ridge semiconductor laser and method for manufacturing a ridge semiconductor laser |
Non-Patent Citations (1)
| Title |
|---|
| 李耀耀: "分布反馈量子级联激光器的光栅制备", 《功能材料与器件学报》, vol. 15, no. 5, 31 October 2009 (2009-10-31) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107732655A (en) * | 2017-10-24 | 2018-02-23 | 武汉光安伦光电技术有限公司 | A kind of Distributed Feedback Laser part preparing grating method |
| CN112636168A (en) * | 2020-12-19 | 2021-04-09 | 全磊光电股份有限公司 | Preparation method of high-performance DFB laser epitaxial wafer |
| CN114777695A (en) * | 2022-04-15 | 2022-07-22 | 河南仕佳光子科技股份有限公司 | Method for accurately measuring top layer thickness of InP-based laser |
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Application publication date: 20130417 |