CN103048335A - Method for judging effectiveness of positioning surface of polishing substrate with crystal orientation (111) - Google Patents
Method for judging effectiveness of positioning surface of polishing substrate with crystal orientation (111) Download PDFInfo
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- CN103048335A CN103048335A CN2012105696138A CN201210569613A CN103048335A CN 103048335 A CN103048335 A CN 103048335A CN 2012105696138 A CN2012105696138 A CN 2012105696138A CN 201210569613 A CN201210569613 A CN 201210569613A CN 103048335 A CN103048335 A CN 103048335A
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- crystal orientation
- locating surface
- positioning surface
- polishing substrate
- polished substrate
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- Sampling And Sample Adjustment (AREA)
- ing And Chemical Polishing (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
Abstract
The invention relates to a method for judging the effectiveness of a positioning surface of a polishing substrate with a crystal orientation (111), which comprises the following steps of: taking the polishing substrate with the crystal orientation (111), corroding for 1-3 minutes by using Sirtl corrosive liquid, positioning the positioning surface of the corroded polishing substrate with the crystal orientation (111) on a plane at arbitrary angle, observing by using a metallographic microscope and seeing a defect corrosion pit of a black equilateral triangle; judging that the main positioning surface of the polishing substrate is accurate when the difference between an apex angle of the black equilateral triangle and the arbitrary angle of the positioning surface is 90 degrees along the clockwise direction; and judging that the main positioning surface of the polishing substrate is wrong when the difference between the apex angle of the black equilateral triangle and the arbitrary angle of the positioning surface is 90 along the anticlockwise direction. By adopting the method, not only can the effectiveness of the positioning surface of the polishing substrate with the crystal orientation (111) be quickly and simply judged, but also the surface contamination of the polishing substrate with the crystal orientation (111) can be prevented.
Description
Technical field
The present invention relates to a kind of differentiation crystal orientation and be the method for＜111〉polished substrate sheet locating surface validity.
Background technology
The crystal orientation is information industries for＜111〉polished substrate sheets, most important main functionality material in the semi-conductor industry, in the semiconductor devices production run, the crystal orientation is reference fields of dividing chip for the locating surface of＜111〉polished substrate sheets, the crystal orientation is cut apart for the scribing of the tube core after＜111〉the polished substrate sheets processing and is to carry out according to the locating surface direction of in advance silicon chip preparation, and the conventional process flow of the making of locating surface is by range estimation monocrystalline main ridge, find out several main ribs of monocrystalline, difference according to the crystal orientation draws main locating surface position again, deviation occurs in case main rib is differentiated, will cause the making mistake of monocrystal rod locating surface.The locating surface of mistake will cause the picture distortion of polished substrate sheet and draw the die yield reduction.In the case, people are seeking the Quick crystal orientation always and are being the method for＜111〉polished substrate sheet locating surface validity, and existing technology is to adopt the contact X-ray orientation device to differentiate (GB/T13388 " silicon chip reference surface crystallographic orientation X-ray measurement method ").The problem that exists is: the crystal orientation all is to carry out in 100 grades of purification workshops for the processing of＜111〉polished substrate sheets, if adopting X-ray orientation device measures, then the crystal orientation will directly contact x-ray instrument for＜111〉polished substrate sheets, and causing the crystal orientation is＜111〉polished substrate sheet surface contaminations.
Summary of the invention
The purpose of this invention is to provide both fast and conveniently, a kind of differentiation crystal orientation that can prevent again surface contamination is the method for＜111〉polished substrate sheet locating surface validity.
The technical scheme that the present invention takes is: a kind of differentiation crystal orientation is the method for＜111〉polished substrate sheet locating surface validity, it is characterized in that getting first a slice crystal orientation and be＜111〉polished substrate sheets, with Sirtl corrosive liquid corrosion 1～3 minute, then the crystal orientation after will corroding is the locating surface of＜111〉polished substrate sheets positioned at arbitrary angles in the plane, by the metallography microscope sem observation, can see the defect etching hole of the equilateral triangle that black is arranged; When the equilateral triangle drift angle of black and locating surface arbitrarily angled differs 90 ° in the direction of the clock, can judge that then the main locating surface of this polished substrate sheet is correct; Arbitrarily angled when counterclockwise differing 90 ° when the equilateral triangle drift angle of black and locating surface then can be judged the main locating surface mistake of this polished substrate sheet.
Described a kind of differentiation crystal orientation is the method for＜111〉polished substrate sheet locating surface validity, and the proportioning that it is characterized in that the Sirtl corrosive liquid is for first with CrO
3With H
2O is made into standard solution by weight 1 ︰ 2, then is 40% hydrofluorite with standard solution and mass percent concentration, gets final product than mixing by the molar volume of 1 ︰ 2.
Adopt the present invention, differentiation crystal orientation that can be fast and convenient is＜111〉polished substrate sheet locating surface validity, can prevent that again the crystal orientation from being the surface contamination of＜111〉polished substrate sheets.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
One, first with CrO
3With H
2O is made into standard solution by weight 1 ︰ 2, then is 40% hydrofluorite with standard solution and mass percent concentration, can make the Sirtl corrosive liquid by the molar volume of 1 ︰ 2 than mixing;
Two, get a slice crystal orientation and be＜111〉polished substrate sheets, with Sirtl corrosive liquid corrosion 1～3 minute;
Three, the crystal orientation after will corroding locates for＜111〉polished substrate sheet locating surfaces (flat limit) are placed on the metaloscope objective table towards people's direction, by the metallography microscope sem observation, can see the defect etching hole of the equilateral triangle that black is arranged;
Four, judge: (orientation angle of drift angle and locating surface differs 90 ° in the direction of the clock when left when the leg-of-mutton drift angle of observing black, namely the position with the people differs 90 ° in the direction of the clock), can judge that then the main locating surface of this polished substrate sheet is correct; When the triangle drift angle of observing black (orientation angle of drift angle and locating surface is by counterclockwise differing 90 °, namely with people's position by counterclockwise differing 90 °) when right, then can judge the main locating surface mistake of this polished substrate sheet.
Claims (1)
1. a differentiation crystal orientation is the method for＜111〉polished substrate sheet locating surface validity, it is characterized in that getting first a slice crystal orientation and be＜111〉polished substrate sheets, with Sirtl corrosive liquid corrosion 1～3 minute, then the crystal orientation after will corroding is the locating surface of＜111〉polished substrate sheets positioned at arbitrary angles in the plane, by the metallography microscope sem observation, can see the defect etching hole of the equilateral triangle that black is arranged; When the equilateral triangle drift angle of black and locating surface arbitrarily angled differs 90 ° in the direction of the clock, can judge that then the main locating surface of this polished substrate sheet is correct; Arbitrarily angled when counterclockwise differing 90 ° when the equilateral triangle drift angle of black and locating surface then can be judged the main locating surface mistake of this polished substrate sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105696138A CN103048335A (en) | 2012-12-25 | 2012-12-25 | Method for judging effectiveness of positioning surface of polishing substrate with crystal orientation (111) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105696138A CN103048335A (en) | 2012-12-25 | 2012-12-25 | Method for judging effectiveness of positioning surface of polishing substrate with crystal orientation (111) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103048335A true CN103048335A (en) | 2013-04-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012105696138A Pending CN103048335A (en) | 2012-12-25 | 2012-12-25 | Method for judging effectiveness of positioning surface of polishing substrate with crystal orientation (111) |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106367813A (en) * | 2016-08-25 | 2017-02-01 | 西安中晶半导体材料有限公司 | Processing method for reference surfaces of semiconductor monocrystalline silicon crystal bar and silicon wafer |
Citations (3)
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| CN1345085A (en) * | 2001-09-30 | 2002-04-17 | 西安交通大学 | Monocrystalline silicon wafer crystal orientation calibrating method |
| CN1474434A (en) * | 2003-07-25 | 2004-02-11 | 中国科学院上海微系统与信息技术研究 | Method for producing silicon nano wire |
| CN101179041A (en) * | 2007-11-27 | 2008-05-14 | 万向硅峰电子股份有限公司 | Method for identifying main reference plane position of burnishing epitaxial slice |
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2012
- 2012-12-25 CN CN2012105696138A patent/CN103048335A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1345085A (en) * | 2001-09-30 | 2002-04-17 | 西安交通大学 | Monocrystalline silicon wafer crystal orientation calibrating method |
| CN1474434A (en) * | 2003-07-25 | 2004-02-11 | 中国科学院上海微系统与信息技术研究 | Method for producing silicon nano wire |
| CN101179041A (en) * | 2007-11-27 | 2008-05-14 | 万向硅峰电子股份有限公司 | Method for identifying main reference plane position of burnishing epitaxial slice |
Non-Patent Citations (1)
| Title |
|---|
| 曾俞衡等: "《重掺磷直拉硅片重缺陷的择优腐蚀》", 《第十五届全国半导体集成电路、硅材料学术会议论文集》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106367813A (en) * | 2016-08-25 | 2017-02-01 | 西安中晶半导体材料有限公司 | Processing method for reference surfaces of semiconductor monocrystalline silicon crystal bar and silicon wafer |
| CN106367813B (en) * | 2016-08-25 | 2019-02-26 | 西安中晶半导体材料有限公司 | A kind of processing method of semiconductor monocrystal silicon crystal bar and the silicon wafer plane of reference |
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Application publication date: 20130417 |