CN103034804B - Safety chip and attack detecting circuit thereof - Google Patents
Safety chip and attack detecting circuit thereof Download PDFInfo
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- CN103034804B CN103034804B CN201210530690.2A CN201210530690A CN103034804B CN 103034804 B CN103034804 B CN 103034804B CN 201210530690 A CN201210530690 A CN 201210530690A CN 103034804 B CN103034804 B CN 103034804B
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- 238000005070 sampling Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000001914 filtration Methods 0.000 claims description 3
- 230000009545 invasion Effects 0.000 abstract description 3
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Abstract
A kind of attack detecting circuit for safety chip and safety chip thereof.Described attack detecting circuit comprises: sampling network, for carrying out sampling filter process to the voltage glitch on VDD-to-VSS, and the noise signal on VDD-to-VSS, shake and voltage glitch can be attacked and is distinguished; Testing circuit, detects for the signal exported sampling network; Output stage, for carrying out process and output detections result to the output signal of testing circuit.Due to attack detecting circuit to the power supply of safety chip or the half invasion voltage glitch that is subject to attack and detect, and export corresponding testing result, therefore, when receiving attack, can sound a warning to safety chip system, take suitable safety practice to prevent potential safety hazard by system, thus improve the fault-resistant attacking ability of safety chip system.
Description
Technical field
The invention belongs to the design field of safety chip, particularly detect the invaded a kind of circuit of safety chip.
Background technology
Safety chip is widely used in the every field of information society, and its major function comprises safe storage to user's critical data, encryption, deciphering and identification etc.
Just because of the importance of data in safety chip, fault attacks becomes one of primary challenge means obtaining data in safety chip.Fault attacks refers to allow chip operation under abnormal operating conditions, such as abnormal voltage, temperature, clock frequency, electromagnetic environment, etc., the behavior that these improper conditions of work may induce chip to make a mistake, some safe operations of chip internal are allowed to lose efficacy, the safety practice causing chip to be taked is bypassed, and then leaks confidential data.
Summary of the invention
The object of the invention is to propose a kind of can detect safety chip and attack detecting circuit thereof that whether the VDD-to-VSS of safety chip is subject to voltage glitch attack.
For an attack detecting circuit for safety chip, it comprises: sampling network, for carrying out sampling filter process to the voltage glitch on VDD-to-VSS, and the noise signal on VDD-to-VSS, shake and voltage glitch can be attacked and is distinguished; Testing circuit, detects for the signal exported sampling network; Output stage, for carrying out process and output detections result to the output signal of testing circuit.
A kind of safety chip, is characterized in that the attack detecting circuit comprised as above.The specific embodiment of the invention, due to attack detecting circuit to the power supply of safety chip or the half invasion voltage glitch that is subject to attack and detect, and export corresponding testing result, therefore, when receiving attack, can sound a warning to safety chip system, suitable safety practice is taked to prevent potential safety hazard by system, thus, prevent confidential information because security of system operation is not correctly carried out and leaks, improve the fault-resistant attacking ability of safety chip system.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the embodiment of attack detecting circuit of the present invention.
Fig. 2 is the circuit shown in Fig. 1 internal signal and signal output waveform figure when VDD-to-VSS is subject to voltage glitch attack.
Embodiment
Below in conjunction with drawings and Examples, invention is described in detail.
As shown in Figure 1, the embodiment of attack detecting circuit of the present invention, this attack detecting circuit is built in safety chip inside, and it comprises:
Sampling network 20, for carrying out sampling filter process to the voltage glitch on VDD-to-VSS; And the noise signal on VDD-to-VSS, shake and voltage glitch can be attacked and distinguished;
Testing circuit 21, detects for the signal exported sampling network;
Output stage 22, for carrying out process and output detections result to the output signal of testing circuit.
Concrete, sampling network 20, testing circuit 21 and output stage 22 can be following structures:
Sampling network 20 comprises: resistance R1, R2, R3, R4 and electric capacity C1, C2; Resistance R3, electric capacity C2 connect with resistance R4, more in parallel with electric capacity C1; Resistance R1 is connected between power supply and electric capacity C1 one end close to power supply; Resistance R2 be connected to and electric capacity C1 one end closely between.Resistance R1 in sampling network 20, R2, R3, R4 and electric capacity C1, C2, carry out filtering, sampling to the noise on VDD-to-VSS and voltage glitch, the low pass of node VA and VB
cutoff frequencybe higher than the low pass of node VC and VD
cutoff frequency, guarantee effectively to filter the normal noise signal on VDD-to-VSS, shake.
Testing circuit 21 comprises: a P type metal-oxide-semiconductor M1, a N-type metal-oxide-semiconductor M2, resistance R5, R6, a phase inverter INV, an impact damper BUF, two d type flip flops.One end of resistance R5 is connected with the input end of the drain electrode of metal-oxide-semiconductor M1, impact damper BUF, and the other end of resistance R5 is connected to ground; One end of resistance R6 is connected with the input end of the drain electrode of metal-oxide-semiconductor M2, phase inverter INV, and the other end of resistance R6 is connected with power supply; The source electrode of metal-oxide-semiconductor M1 is connected close to one end of power supply with electric capacity C2 in sampling network 20, and grid is connected close to one end of power supply with electric capacity C1 in sampling network 20; The source electrode of metal-oxide-semiconductor M2 is connected with electric capacity C2 one end closely in sampling network 20, and grid is connected with electric capacity C1 one end closely in sampling network 20; The output terminal of impact damper BUF is connected with the input end of clock CK of first d type flip flop, and the output terminal of phase inverter INV is connected with the input end of clock CK of second d type flip flop; The data input pin D of two d type flip flops is connected with the source electrode of metal-oxide-semiconductor M1, and the reset terminal RN of two d type flip flops is connected with enable signal EN.
Output stage 22 comprises or door, or door input end VG is connected with the forward data output terminal of a d type flip flop in testing circuit, or another input end VH of door is connected with the forward data output terminal of another d type flip flop in testing circuit, or the output terminal of door is the output of testing circuit.
During work, VA and VC provides sampled voltage for the P type metal-oxide-semiconductor M1 in testing circuit 21, VB and VD provides sampled voltage for the N-type metal-oxide-semiconductor M2 in testing circuit 21, and the voltage difference of VA and VC is the voltage difference of VGS1, VB and VD is VGS2.The threshold voltage of the P type metal-oxide-semiconductor M1 in testing circuit 21 is VTHP, and the threshold voltage of N-type metal-oxide-semiconductor M2 is VTHN.
As shown in the oscillogram of Fig. 2, when the pulse width of the voltage glitch on VDD-to-VSS and amplitude exceed the detection threshold of voltage glitch testing circuit, | VGS1|>|VTHP|, VGS2>VTHN, P type metal-oxide-semiconductor M1 now in testing circuit 21 and N-type metal-oxide-semiconductor M2 will open, electric current respectively flows through resistance R5 and R6, then by impact damper BUF and phase inverter INV, exports positive pulse respectively at output terminal VE and VF.
When voltage glitch testing circuit enable signal EN is low level, two d type flip flops in testing circuit 21 are in reset mode, export as low level; When enable signal EN is high level, VE and VF exports positive pulse and the d type flip flop of two in trigger detection circuit 21 is exported high level, in output stage 22 or door carries out the d type flip flop Output rusults of two in testing circuit 21 or operates, and exports as the testing result OUT of voltage glitch testing circuit.
When chip normally works, VDD-to-VSS can exist the noise of certain pulse width and amplitude, voltage dithering.Such as, the detection threshold of voltage glitch testing circuit is that pulse width is for being greater than 1ns, the supply voltage that pulse height is greater than 0.7 times, under this condition, voltage glitch testing circuit filters to the noise level normal voltage shake on VDD-to-VSS during circuit working, can not false triggering voltage glitch testing circuit, guarantee that circuit is reliable, steady operation.And when VDD-to-VSS Shangdi voltage glitch reaches the detection threshold of voltage glitch testing circuit, safety chip system is by judging that the height of voltage glitch testing circuit output level judges whether safety chip is subject to voltage glitch and attacks.
In the specific embodiment of the invention, sampling network carries out sampling filter process to the voltage glitch on VDD-to-VSS, while the voltage glitch on VDD-to-VSS is sampled, also to carry out filtering to the noise on VDD-to-VSS, in case the noise false triggering voltage glitch testing circuit on VDD-to-VSS, guarantee that voltage glitch testing circuit is working properly, reliable.
When detect safety chip power supply or be subject to after half invasion voltage glitch attacks, to sound a warning to safety chip system, and taking suitable safety practice to prevent potential safety hazard by system, and prevent confidential information because security of system operation is not correctly carried out and leaks.Invention increases the fault-resistant attacking ability of safety chip system.
Above-mentioned embodiment illustrates but does not limit the present invention, and those skilled in the art can design within the scope of the claims and multiplely replace example.Those skilled in the art it should be appreciated that not violating within scope of the present invention as defined in the appended claims, can make suitable adjustment, amendment etc. to specific implementation.Therefore, all according to the spirit and principles in the present invention, any modifications and variations done, within the scope of the present invention all defined at appended claims.
Claims (4)
1. for an attack detecting circuit for safety chip, it is characterized in that, this attack detecting circuit comprises:
Sampling network, for carrying out sampling filter process to the voltage glitch on VDD-to-VSS, and can attack the noise signal on VDD-to-VSS, shake and voltage glitch and distinguished;
Testing circuit, detects for the signal exported described sampling network;
Output stage, for carrying out process and output detections result to the output signal of described testing circuit;
Described sampling network comprises:
Resistance R1, R2, R3, R4 and electric capacity C1, C2;
Wherein, described resistance R3, described electric capacity C2 and described resistance R4 are connected in series, more in parallel with described electric capacity C1; Described resistance R1 is connected between power supply and described electric capacity C1 one end close to power supply; Resistance R2 be connected to and electric capacity C1 one end closely between;
Wherein, described resistance R1, R2 in described sampling network, R3, R4 and described electric capacity C1, C2, filtering, sampling are carried out to the noise on VDD-to-VSS and voltage glitch, the low pass of the node VA between described resistance R1 and described electric capacity C1 and the node VB between described resistance R2 and described electric capacity C1
cutoff frequencybe higher than, the low pass of the node VC between described resistance R3 and electric capacity C2 and the node VD between described resistance R4 and electric capacity C2
cutoff frequency, guarantee effectively to filter the normal noise signal on VDD-to-VSS, shake.
2. attack detecting circuit as claimed in claim 1, it is characterized in that, described testing circuit comprises:
A P type metal-oxide-semiconductor M1, a N-type metal-oxide-semiconductor M2, resistance R5, R6, a phase inverter INV, an impact damper BUF, the first d type flip flop, the second d type flip flop;
Wherein, one end of described resistance R5 is connected with the input end of the drain electrode of described metal-oxide-semiconductor M1, described impact damper BUF, and the other end of described resistance R5 is connected to ground; One end of described resistance R6 is connected with the input end of the drain electrode of described metal-oxide-semiconductor M2, described phase inverter INV, and the other end of described resistance R6 is connected with power supply; The source electrode of described metal-oxide-semiconductor M1 is connected close to one end of power supply with electric capacity C2 described in described sampling network, and grid is connected close to one end of power supply with electric capacity C1 described in described sampling network; The source electrode of described metal-oxide-semiconductor M2 is connected with the one end closely of electric capacity C2 described in described sampling network, and grid is connected with the one end closely of electric capacity C1 described in described sampling network; The output terminal of described impact damper BUF is connected with the input end of clock CK of described first d type flip flop, and the output terminal of described phase inverter INV is connected with the input end of clock CK of described second d type flip flop; The data input pin D of described first d type flip flop and described second d type flip flop is connected with the source electrode of described metal-oxide-semiconductor M1, and reset terminal RN is connected with enable signal EN.
3. attack detecting circuit as claimed in claim 2, it is characterized in that, described output stage comprises or door, an input end VG that is described or door is connected with the forward data output terminal of the first d type flip flop described in described testing circuit, another input end VH that is described or door is connected with the forward data output terminal of the second d type flip flop described in described testing circuit, and output terminal that is described or door is the output of described testing circuit.
4. a safety chip, is characterized in that comprising the attack detecting circuit as in claims 1 to 3 as described in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210530690.2A CN103034804B (en) | 2012-12-11 | 2012-12-11 | Safety chip and attack detecting circuit thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210530690.2A CN103034804B (en) | 2012-12-11 | 2012-12-11 | Safety chip and attack detecting circuit thereof |
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| CN103034804A CN103034804A (en) | 2013-04-10 |
| CN103034804B true CN103034804B (en) | 2015-12-23 |
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| CN201210530690.2A Expired - Fee Related CN103034804B (en) | 2012-12-11 | 2012-12-11 | Safety chip and attack detecting circuit thereof |
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Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104166053A (en) * | 2013-05-17 | 2014-11-26 | 上海华虹集成电路有限责任公司 | Burr detection circuit |
| CN103675421A (en) * | 2013-05-31 | 2014-03-26 | 国家电网公司 | Power burr signal detection circuit and detection method thereof |
| CN104714193A (en) * | 2014-08-27 | 2015-06-17 | 北京中电华大电子设计有限责任公司 | High-precision low-power-consumption power glitch detection circuit |
| CN104834369A (en) * | 2015-05-11 | 2015-08-12 | 北方信息控制集团有限公司 | Power failure data protection device of real-time control system |
| CN105510688B (en) * | 2016-01-25 | 2018-09-04 | 大唐微电子技术有限公司 | A kind of voltage detector for realizing CP tests |
| CN106209034B (en) * | 2016-07-22 | 2019-01-18 | 天津大学 | A kind of high frequency clock frequency detecting structure for attack resistance chip |
| CN108073830B (en) | 2016-11-15 | 2021-05-18 | 华为技术有限公司 | Terminal chip integrated with safety component |
| CN107942154A (en) * | 2017-10-16 | 2018-04-20 | 北京中电华大电子设计有限责任公司 | A kind of protection structures and methods suitable for the protection of chip EMP attack N |
| US20200285780A1 (en) * | 2019-03-06 | 2020-09-10 | Nvidia Corp. | Cross domain voltage glitch detection circuit for enhancing chip security |
| CN110462415B (en) | 2019-06-24 | 2021-12-28 | 深圳市汇顶科技股份有限公司 | Burr signal detection circuit, safety chip and electronic equipment |
| EP3783372B1 (en) * | 2019-06-24 | 2022-12-07 | Shenzhen Goodix Technology Co., Ltd. | Glitch signal detection circuit, security chip, and electronic device |
| CN112132998A (en) * | 2019-06-25 | 2020-12-25 | 国民技术股份有限公司 | Intelligent access control equipment and safety control method and device thereof |
| CN112132999A (en) * | 2019-06-25 | 2020-12-25 | 国民技术股份有限公司 | Safety testing method and system for intelligent access control equipment |
| CN110378149A (en) * | 2019-08-02 | 2019-10-25 | 河源市飞腾信息科技有限公司 | A kind of computer information security control apparatus |
| WO2021026914A1 (en) * | 2019-08-15 | 2021-02-18 | 深圳市汇顶科技股份有限公司 | Power glitch signal detection circuit, secure chip and electronic device |
| WO2021030958A1 (en) | 2019-08-16 | 2021-02-25 | 深圳市汇顶科技股份有限公司 | Detection circuit for electromagnetic fault injection, security chip, and electronic device |
| CN111670366B (en) * | 2020-03-09 | 2022-11-18 | 深圳市汇顶科技股份有限公司 | Voltage attack detection circuit and chip |
| EP3929601B1 (en) * | 2020-04-01 | 2023-05-03 | Shenzhen Goodix Technology Co., Ltd. | Voltage attack detection circuit and chip |
| WO2021196094A1 (en) * | 2020-04-01 | 2021-10-07 | 深圳市汇顶科技股份有限公司 | Circuit and chip for detecting voltage-based attack |
| CN117477918B (en) * | 2023-12-27 | 2024-03-29 | 成都氮矽科技有限公司 | Drive signal input detection circuit, gaN gate driver, and MOSFET gate driver |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100440451B1 (en) * | 2002-05-31 | 2004-07-14 | 삼성전자주식회사 | Circuit For Detecting A Volatage Glitch, An Integrated Circuit Device Having The Same, And An Apparatus And Method For Securing An Integrated Circuit Device From A Voltage Glitch Attack |
| US20080061843A1 (en) * | 2006-09-11 | 2008-03-13 | Asier Goikoetxea Yanci | Detecting voltage glitches |
| CN101943728B (en) * | 2009-07-06 | 2012-03-28 | 北京中电华大电子设计有限责任公司 | Detection circuit capable of preventing attack of power supply burrs |
| CN101943729B (en) * | 2009-07-06 | 2012-03-28 | 北京中电华大电子设计有限责任公司 | Circuit for quickly detecting power sources and glitches on ground with low power consumption |
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Address after: 518000 Guangdong Province Shenzhen Nanshan District High-tech Industrial Park South District High-tech Nandao National Micro-R&D Building 1 Floor West Part, 2 Floors Patentee after: GUOWEI GROUP (SHENZHEN) Co.,Ltd. Address before: 518000 2F, Shenzhen new high tech Industrial Park, Guangdong, China. Patentee before: SHENZHEN STATE MICRO TECHNOLOGY Co.,Ltd. |
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