CN103026493A - 用于太阳能电池的带有表面结构化的面电极的基底及其制造方法 - Google Patents

用于太阳能电池的带有表面结构化的面电极的基底及其制造方法 Download PDF

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Publication number
CN103026493A
CN103026493A CN201180030806XA CN201180030806A CN103026493A CN 103026493 A CN103026493 A CN 103026493A CN 201180030806X A CN201180030806X A CN 201180030806XA CN 201180030806 A CN201180030806 A CN 201180030806A CN 103026493 A CN103026493 A CN 103026493A
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CN
China
Prior art keywords
substrate
layer
lower floor
electrode
electrode layer
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Pending
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CN201180030806XA
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English (en)
Chinese (zh)
Inventor
沃尔夫冈·富卡雷克
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SOLAYER GmbH
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SOLAYER GmbH
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Publication date
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Publication of CN103026493A publication Critical patent/CN103026493A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02366Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
CN201180030806XA 2010-06-21 2011-06-17 用于太阳能电池的带有表面结构化的面电极的基底及其制造方法 Pending CN103026493A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010030301.1 2010-06-21
DE102010030301A DE102010030301A1 (de) 2010-06-21 2010-06-21 Substrat mit oberflächlich strukturierter Flächenelektrode
PCT/EP2011/060091 WO2011161010A2 (de) 2010-06-21 2011-06-17 Substrat mit oberflächlich strukturierter flächenelektrode für eine solarzelle und verfahren zu dessen herstellung

Publications (1)

Publication Number Publication Date
CN103026493A true CN103026493A (zh) 2013-04-03

Family

ID=44628892

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180030806XA Pending CN103026493A (zh) 2010-06-21 2011-06-17 用于太阳能电池的带有表面结构化的面电极的基底及其制造方法

Country Status (3)

Country Link
CN (1) CN103026493A (de)
DE (1) DE102010030301A1 (de)
WO (1) WO2011161010A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012002606A1 (de) 2012-02-13 2013-08-14 Vaciontec GmbH Erzeugen von leitfähigen Strukturen in transparenten Schichten mittels Laserbestrahlung
DE102013109163B4 (de) 2013-08-23 2022-05-12 Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung polykristalliner, 3D-Strukturen aufweisender Siliziumschichten gleichmäßiger Dicke

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015787A (ja) * 1999-04-27 2001-01-19 Asahi Glass Co Ltd 透明導電膜付き基体、その製造方法および太陽電池
EP1443527A1 (de) * 2001-10-19 2004-08-04 Asahi Glass Company Ltd. Substrat mit transparentem leitfähigem oxidfilm und herstellungsverfahren dafür und photoelektrisches umsetzungselement
EP1732139A1 (de) * 2004-03-25 2006-12-13 Kaneka Corporation Träger für dünnfilmsolarzelle, verfahren zu deren herstellung und ihn einsetzende dünnfilmsolarzelle
WO2009140961A1 (de) * 2008-05-23 2009-11-26 Verein Zur Förderung Von Innovationen Durch Forschung, Entwicklung Und Technologietransfer E. V. (Verein Innovent E. V.) Verfahren zur herstellung von nanoskaligen elektrisch leitfähigen mehrschichtsystemen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241983A (ja) * 1985-04-18 1986-10-28 Sanyo Electric Co Ltd 光起電力装置
DE102004017680B4 (de) 2004-04-10 2008-01-24 Forschungszentrum Jülich GmbH Verfahren zur Behandlung von Substraten mit vorstrukturierten Zinkoxidschichten
FR2915834B1 (fr) * 2007-05-04 2009-12-18 Saint Gobain Substrat transparent muni d'une couche electrode perfectionnee
DE102007025068B4 (de) 2007-05-29 2009-06-25 Innovent E.V. Gasbrenner
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
CN101308882A (zh) 2008-07-22 2008-11-19 东莞宏威数码机械有限公司 透明导电氧化物绒面的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015787A (ja) * 1999-04-27 2001-01-19 Asahi Glass Co Ltd 透明導電膜付き基体、その製造方法および太陽電池
EP1443527A1 (de) * 2001-10-19 2004-08-04 Asahi Glass Company Ltd. Substrat mit transparentem leitfähigem oxidfilm und herstellungsverfahren dafür und photoelektrisches umsetzungselement
EP1732139A1 (de) * 2004-03-25 2006-12-13 Kaneka Corporation Träger für dünnfilmsolarzelle, verfahren zu deren herstellung und ihn einsetzende dünnfilmsolarzelle
WO2009140961A1 (de) * 2008-05-23 2009-11-26 Verein Zur Förderung Von Innovationen Durch Forschung, Entwicklung Und Technologietransfer E. V. (Verein Innovent E. V.) Verfahren zur herstellung von nanoskaligen elektrisch leitfähigen mehrschichtsystemen

Also Published As

Publication number Publication date
WO2011161010A2 (de) 2011-12-29
DE102010030301A1 (de) 2011-12-22
WO2011161010A3 (de) 2012-03-08

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C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: German Kay Searles Dov

Applicant after: Solayer GmbH

Address before: German Fischbach

Applicant before: Solayer GmbH

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Application publication date: 20130403