WO2011161010A3 - Substrat mit oberflächlich strukturierter flächenelektrode für eine solarzelle und verfahren zu dessen herstellung - Google Patents

Substrat mit oberflächlich strukturierter flächenelektrode für eine solarzelle und verfahren zu dessen herstellung Download PDF

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Publication number
WO2011161010A3
WO2011161010A3 PCT/EP2011/060091 EP2011060091W WO2011161010A3 WO 2011161010 A3 WO2011161010 A3 WO 2011161010A3 EP 2011060091 W EP2011060091 W EP 2011060091W WO 2011161010 A3 WO2011161010 A3 WO 2011161010A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
solar cell
producing
surface electrode
layer
Prior art date
Application number
PCT/EP2011/060091
Other languages
English (en)
French (fr)
Other versions
WO2011161010A2 (de
Inventor
Wolfgang Fukarek
Original Assignee
Solayer Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solayer Gmbh filed Critical Solayer Gmbh
Priority to CN201180030806XA priority Critical patent/CN103026493A/zh
Publication of WO2011161010A2 publication Critical patent/WO2011161010A2/de
Publication of WO2011161010A3 publication Critical patent/WO2011161010A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Es wird ein Substrat (1) mit einer oberflächlich strukturierten Schicht und eine Solarzelle unter Verwendung eines solchen Substrats (1) angegeben, bei denen auf dem Substrat (1) eine Unterschicht (2) und darüber eine elektrisch leitfähige Elektrodenschicht (3, 5) zur Verwendung als Flächenelektrode abgeschieden ist, wobei die Unterschicht (2) auf seiner dem Substrat (1) abgewandten Oberfläche eine nanoskalige Oberflächenstruktur aufweist und die Elektrodenschicht (3, 5) Konformität mit unabhängig von der Oberflächenausrichtung gleichförmiger Dicke aufweist. Die nanoskalige Oberflächenstruktur der Unterschicht (2) wurde mittels eines Combustion-CVD-Verfahrens mit atmosphärisch betriebenem Plasmabrenner unter Bildung von Nanoclustern auf Strukturgrößen im Bereich von bis zu 500 nm RMS-Rauheit eingestellt.
PCT/EP2011/060091 2010-06-21 2011-06-17 Substrat mit oberflächlich strukturierter flächenelektrode für eine solarzelle und verfahren zu dessen herstellung WO2011161010A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201180030806XA CN103026493A (zh) 2010-06-21 2011-06-17 用于太阳能电池的带有表面结构化的面电极的基底及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010030301.1 2010-06-21
DE102010030301A DE102010030301A1 (de) 2010-06-21 2010-06-21 Substrat mit oberflächlich strukturierter Flächenelektrode

Publications (2)

Publication Number Publication Date
WO2011161010A2 WO2011161010A2 (de) 2011-12-29
WO2011161010A3 true WO2011161010A3 (de) 2012-03-08

Family

ID=44628892

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/060091 WO2011161010A2 (de) 2010-06-21 2011-06-17 Substrat mit oberflächlich strukturierter flächenelektrode für eine solarzelle und verfahren zu dessen herstellung

Country Status (3)

Country Link
CN (1) CN103026493A (de)
DE (1) DE102010030301A1 (de)
WO (1) WO2011161010A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012002606A1 (de) 2012-02-13 2013-08-14 Vaciontec GmbH Erzeugen von leitfähigen Strukturen in transparenten Schichten mittels Laserbestrahlung
DE102013109163B4 (de) 2013-08-23 2022-05-12 Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung polykristalliner, 3D-Strukturen aufweisender Siliziumschichten gleichmäßiger Dicke

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015787A (ja) * 1999-04-27 2001-01-19 Asahi Glass Co Ltd 透明導電膜付き基体、その製造方法および太陽電池
EP1443527A1 (de) * 2001-10-19 2004-08-04 Asahi Glass Company Ltd. Substrat mit transparentem leitfähigem oxidfilm und herstellungsverfahren dafür und photoelektrisches umsetzungselement
EP1732139A1 (de) * 2004-03-25 2006-12-13 Kaneka Corporation Träger für dünnfilmsolarzelle, verfahren zu deren herstellung und ihn einsetzende dünnfilmsolarzelle

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Publication number Priority date Publication date Assignee Title
JPS61241983A (ja) * 1985-04-18 1986-10-28 Sanyo Electric Co Ltd 光起電力装置
DE102004017680B4 (de) 2004-04-10 2008-01-24 Forschungszentrum Jülich GmbH Verfahren zur Behandlung von Substraten mit vorstrukturierten Zinkoxidschichten
FR2915834B1 (fr) * 2007-05-04 2009-12-18 Saint Gobain Substrat transparent muni d'une couche electrode perfectionnee
DE102007025068B4 (de) 2007-05-29 2009-06-25 Innovent E.V. Gasbrenner
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
DE102008025108B4 (de) 2008-05-23 2012-02-23 Verein zur Förderung von Innovationen durch Forschung, Entwicklung und Technologietransfer e.V. (Verein INNOVENT e.V.) Verfahren zur Herstellung von nanoskaligen elektrisch leitfähigen Mehrschichtsystemen
CN101308882A (zh) 2008-07-22 2008-11-19 东莞宏威数码机械有限公司 透明导电氧化物绒面的制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015787A (ja) * 1999-04-27 2001-01-19 Asahi Glass Co Ltd 透明導電膜付き基体、その製造方法および太陽電池
EP1443527A1 (de) * 2001-10-19 2004-08-04 Asahi Glass Company Ltd. Substrat mit transparentem leitfähigem oxidfilm und herstellungsverfahren dafür und photoelektrisches umsetzungselement
EP1732139A1 (de) * 2004-03-25 2006-12-13 Kaneka Corporation Träger für dünnfilmsolarzelle, verfahren zu deren herstellung und ihn einsetzende dünnfilmsolarzelle

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
TADATSUGU MINAMI: "Transparent conducting oxide semiconductors for transparent electrodes; Transparent conducting oxide semiconductors for transparent electrodes", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, GB, vol. 20, no. 4, 1 April 2005 (2005-04-01), pages S35 - S44, XP020086463, ISSN: 0268-1242, DOI: 10.1088/0268-1242/20/4/004 *
WORSCH C ET AL: "Effect of substrate temperature during combustion chemical vapour deposition on the formation of silica films", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 518, no. 17, 1 February 2010 (2010-02-01), pages 4798 - 4803, XP027065073, ISSN: 0040-6090, [retrieved on 20100201], DOI: 10.1016/J.TSF.2010.01.032 *
ZHAO Z ET AL: "Transparent conducting ZnO:Al films via CCVD for amorphous silicon solar cells", CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS INC. US; [IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE],, vol. CONF. 29, 19 May 2002 (2002-05-19), pages 1282 - 1285, XP010666517, ISBN: 978-0-7803-7471-3, DOI: 10.1109/PVSC.2002.1190843 *

Also Published As

Publication number Publication date
WO2011161010A2 (de) 2011-12-29
DE102010030301A1 (de) 2011-12-22
CN103026493A (zh) 2013-04-03

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