CN103022263A - Thin silicon technology - Google Patents
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- CN103022263A CN103022263A CN201310002316XA CN201310002316A CN103022263A CN 103022263 A CN103022263 A CN 103022263A CN 201310002316X A CN201310002316X A CN 201310002316XA CN 201310002316 A CN201310002316 A CN 201310002316A CN 103022263 A CN103022263 A CN 103022263A
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Abstract
A thin silicon technology belongs to the technical field of semiconductor processing. The technology can be used for producing thinner silicon films and solve the problem that the making process is complex and high in cost. The technology includes the steps of a, providing a pre-treatable silicon wafer; b, cleaning; c, providing a container allowing corrosion of the silicon wafer, and placing the silicon wafer horizontally at the bottom of the container; d, etching with potassium hydroxide solution in the container; and e, polishing. Due to the fact that common utensils and solutions are used in the technology, the technology is simple in preparation, low in cost, safe and reliable in the producing process, suitable for large-scale production, and suitable for production of thin silicon in the field of semiconductor processing.
Description
Technical field
The present invention relates to the semiconductor processing technology field, especially a kind of thin silicon technology in the micromachined.
Background technology
Along with the maturation of semiconductor processing technology and perfect, microelectromechanical systems MEMS (Micro-Electro-Mechanical Systems) industry has become the focus of an important high-technology field and research work.Most of MEMS devices all are to be made of film, and especially in capacitance pressure transducer,, can the quality of film be directly connected to transducer and work.
The capacitance pressure transducer, silicon fiml of high range is thicker, for example is used for the pressure sensor of hot environment, has adopted the Si/Al of 47 μ m
2O
3Film is made relatively simple.And concerning the capacitance type sensor of many lower ranges, the making of high-quality ultra-thin film becomes and is even more important: in the dynamic balance condenser type vacuum transducer process of making lower range, obtaining 4 μ m or thinner silicon fiml is committed step.In addition, thin film silicon solar cell is very extensive in the application of aviation field, and it is not mainly used in cost requirement high but in the Military Application that cell flexible and efficient are had relatively high expectations, such as auxiliary power source of the military moving targets such as early warning dirigible etc.
In above-mentioned high sensitivity device and aviation field hull cell manufacturing process, the silicon fiml of traditional monocrystalline silicon preparation method preparation is thicker, be unsuitable for flexible special application field, in addition, prepare the present method of thinner monocrystalline silicon membrane such as MOCVD etc., cost is higher, complicated process of preparation, therefore, realize that there is certain difficulty in large batch of production.
Summary of the invention
Technical assignment of the present invention is to provide a kind of thin silicon technology for above-mentioned deficiency of the prior art, and this technology can be made thinner silicon fiml, and can effectively alleviate complex manufacturing process, problem that cost is high.
The technical solution adopted for the present invention to solve the technical problems is: this kind thin silicon technology, and its step comprises: a, providing can pretreated silicon chip; B, cleaning; C, provide and for the container of silicon slice corrosion, silicon chip to be lain against the corrosion container bottoms; D, in container, use the potassium hydroxide solution etching; E, polishing.
In the described thin silicon technology, in step a, described silicon chip is structural integrity, flawless silicon chip, and described silicon chip preferred thickness is less than or equal to 200 microns.
In the described thin silicon technology, in step b, the used cleaning solution of used cleaning solution is take hydrogenperoxide steam generator as the basis, at first use the acid solution of sulfuric acid and hydrogen peroxide to clean during cleaning, clean with ultra-pure water again, the alkaline solution of water, hydrogen peroxide and ammoniacal liquor cleans again, and the acid solution of last water, hydrogen peroxide and hydrochloric acid cleans.
In the described thin silicon technology, in step c, described container for silicon slice corrosion is quartz container.
In the described thin silicon technology, in steps d, the working temperature in the container is 80 degrees centigrade to 90 degrees centigrade.
In the described thin silicon technology, in step e, twin polishing technique is adopted in described polishing.
The present invention has following outstanding beneficial effect:
1, since described silicon chip preferred thickness less than or equal to 200 microns, and this process using potassium hydroxide solution is as etching solution, corrosion rate is relatively slow, therefore be conducive to the control to corrosion rate and required silicon wafer thickness, avoided simultaneously causing making failed problem because corrosion rate is too fast.
2, because present technique adopts glossing after etching, and in step e, twin polishing technique is adopted in described polishing, so the silicon fiml surface of producing is more even, more smooth.
3, because to adopt in this technique all be utensil and the solution of commonly using, easy to operate so its cost is lower, reduced simultaneously the complexity of technique.
Description of drawings
Accompanying drawing 1 is process chart of the present invention;
Accompanying drawing 2 is that thin silicon of the present invention prepares schematic diagram;
Accompanying drawing 3 is silicon chip twin polishing schematic diagrames of the present invention;
Description of reference numerals: 1 container, 2 silicon chips, 3 potassium hydroxide solutions, 4 ramming heads, 5 polished land, 6 polishing pads.
Embodiment
As shown in Figure 1, this kind thin silicon technology, its step comprises: S1, providing can pretreated silicon chip 2; S2, cleaning; S3, provide and for the container 1 of silicon chip 2 corrosion, silicon chip 2 to be lain against corrosion container 1 bottom surface; S4, in container 1 with potassium hydroxide solution 3 etchings; S5, polishing.
Thin silicon technology of the present invention, in step S1, described silicon chip 2 is structural integrity, flawless silicon chip, described silicon chip 2 preferred thickness are less than or equal to 200 microns.In the present embodiment, silicon chip 2 thickness are 150 microns.
Thin silicon technology of the present invention, in step S2, used cleaning solution is hydrogenperoxide steam generator, concrete operation step is, be sulfuric acid with the composition ratio first with silicon chip 2: the Acidic Liquid of hydrogen peroxide=5: 1 or 4: 1 cleans, then wash with ultra-pure water, be water with the composition ratio again: hydrogen peroxide: the alkaline cleaning fluid of ammoniacal liquor=5: 2: 1 or 5: 1: 1 or 7: 2: 1 cleans, it is water-soluble because the oxidation of hydrogen peroxide and the complexing of ammoniacal liquor, many metal ions form stable soluble complexes; Then use composition than being water: hydrogen peroxide: the acidic cleaning solution of hydrochloric acid=7: 2: 1 or 5: 2: 1, because the oxidation of hydrogen peroxide and the dissolving of hydrochloric acid, and the complexing of chloride ion, many metals generate water-soluble complex ion, thereby reached the purpose of cleaning, for the etching process of back is prepared.
Thin silicon technology of the present invention, in step S3, described container 1 for silicon chip 2 corrosion is quartz container.
Thin silicon technology of the present invention, in step S4, the working temperature in the container 1 is 80 degrees centigrade to 90 degrees centigrade.In the present embodiment, corrosion temperature is 85 degrees centigrade.In container 1, corrode with potassium hydroxide solution 3; In the present embodiment, when temperature reaches 85 degrees centigrade, add potassium hydroxide solution 3, potassium hydroxide content is 13%～23% in the described potassium hydroxide solution 3, potassium hydroxide is preferred 20% in the present embodiment, add potassium hydroxide solution 3 after, can carry out the stirring of moderate dynamics and rock, simultaneously available stopwatch carries out timing, finally can obtain thickness and be 10 to 20 microns thin silicon.
Thin silicon technology of the present invention, in step S5, twin polishing technique is adopted in described polishing.Twin polishing process using Twp-sided polishing machine is realized, Twp-sided polishing machine not only is equipped with polishing pad 6 in polished land 5, on ramming head 4 (dish) polishing pad 6 is housed also, adopts the dragon flying around dish to load silicon chip 2 between two pads, the dragon flying around dish also claims carrier plate, is thinner than silicon chip 2 thickness; Polishing fluid adopts the porous injection mode to be worth between two pads by ramming head 4 (upper dish).Adopt the benefit of twin polishing to be that it had both simplified technique, can obtain gratifying effect again.
Thin silicon technology of the present invention, prepare easy, cost is low, and manufacturing process is safe and reliable, is fit to large-scale production.
The above is preferred embodiment of the present invention only, is not that the present invention is done any pro forma restriction.Any those of ordinary skill in the art are not breaking away from the technical solution of the present invention scope situation, all can utilize technology contents described above that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention to any change modification, equivalent variations and modification that above embodiment makes, all belongs to the protection range of the technical program according to technology of the present invention.
Claims (6)
1. a thin silicon technology is characterized in that, its step comprises: a, providing can pretreated silicon chip; B, cleaning; C, provide and for the container of silicon slice corrosion, silicon chip to be lain against the corrosion container bottoms; D, in container, use the potassium hydroxide solution etching; E, polishing.
2. a kind of thin silicon technology according to claim 1 is characterized in that, in step a, described silicon chip is structural integrity, flawless silicon chip, and described silicon chip preferred thickness is less than or equal to 200 microns.
3. a kind of thin silicon technology according to claim 1 is characterized in that, in the described thin silicon technology, in step b, used cleaning solution is hydrogenperoxide steam generator.
4. a kind of thin silicon technology according to claim 1 is characterized in that, in the described thin silicon technology, in step c, described container for silicon slice corrosion is quartz container.
5. a kind of thin silicon technology according to claim 1 is characterized in that, in the described thin silicon technology, in steps d, the working temperature in the container is 18 degrees centigrade to 30 degrees centigrade.
6. a kind of thin silicon technology according to claim 1 is characterized in that, in the described thin silicon technology, in step e, twin polishing technique is adopted in described polishing.
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| CN201310002316XA CN103022263A (en) | 2013-01-06 | 2013-01-06 | Thin silicon technology |
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| CN201310002316XA CN103022263A (en) | 2013-01-06 | 2013-01-06 | Thin silicon technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943724A (en) * | 2014-04-17 | 2014-07-23 | 南京大学 | Flexible and efficient crystalline silicon solar cell and manufacturing method thereof |
| CN109675858A (en) * | 2018-12-20 | 2019-04-26 | 天津中环领先材料技术有限公司 | A kind of cleaning process after wafer thinning |
| CN110526202A (en) * | 2018-05-25 | 2019-12-03 | 浙江清华柔性电子技术研究院 | The preparation method of flexible silicon wafer |
| CN110526201A (en) * | 2018-05-25 | 2019-12-03 | 浙江清华柔性电子技术研究院 | The preparation method of flexible silicon wafer |
Citations (4)
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|---|---|---|---|---|
| CN1697140A (en) * | 2004-05-10 | 2005-11-16 | 中国科学院半导体研究所 | Etching technique for preparing ultrathin flexible silicon sustrate through two step method in wet-process etching |
| CN101906638A (en) * | 2010-07-21 | 2010-12-08 | 河北工业大学 | Surface cleaning method of polished silicon substrate material |
| CN102226989A (en) * | 2011-06-16 | 2011-10-26 | 中国电子科技集团公司第二十四研究所 | Method for manufacturing mixed crystal-oriented silicon substrate |
| CN102528597A (en) * | 2010-12-08 | 2012-07-04 | 有研半导体材料股份有限公司 | Manufacturing process of large-diameter silicon wafer |
-
2013
- 2013-01-06 CN CN201310002316XA patent/CN103022263A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1697140A (en) * | 2004-05-10 | 2005-11-16 | 中国科学院半导体研究所 | Etching technique for preparing ultrathin flexible silicon sustrate through two step method in wet-process etching |
| CN101906638A (en) * | 2010-07-21 | 2010-12-08 | 河北工业大学 | Surface cleaning method of polished silicon substrate material |
| CN102528597A (en) * | 2010-12-08 | 2012-07-04 | 有研半导体材料股份有限公司 | Manufacturing process of large-diameter silicon wafer |
| CN102226989A (en) * | 2011-06-16 | 2011-10-26 | 中国电子科技集团公司第二十四研究所 | Method for manufacturing mixed crystal-oriented silicon substrate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943724A (en) * | 2014-04-17 | 2014-07-23 | 南京大学 | Flexible and efficient crystalline silicon solar cell and manufacturing method thereof |
| CN110526202A (en) * | 2018-05-25 | 2019-12-03 | 浙江清华柔性电子技术研究院 | The preparation method of flexible silicon wafer |
| CN110526201A (en) * | 2018-05-25 | 2019-12-03 | 浙江清华柔性电子技术研究院 | The preparation method of flexible silicon wafer |
| CN110526202B (en) * | 2018-05-25 | 2022-11-01 | 浙江清华柔性电子技术研究院 | Preparation method of flexible silicon wafer |
| CN110526201B (en) * | 2018-05-25 | 2022-11-01 | 浙江清华柔性电子技术研究院 | Preparation method of flexible silicon wafer |
| CN109675858A (en) * | 2018-12-20 | 2019-04-26 | 天津中环领先材料技术有限公司 | A kind of cleaning process after wafer thinning |
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