CN103021977A - 一种新型的功率模块 - Google Patents

一种新型的功率模块 Download PDF

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CN103021977A
CN103021977A CN2012105692828A CN201210569282A CN103021977A CN 103021977 A CN103021977 A CN 103021977A CN 2012105692828 A CN2012105692828 A CN 2012105692828A CN 201210569282 A CN201210569282 A CN 201210569282A CN 103021977 A CN103021977 A CN 103021977A
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substrate
power model
coolant
heat dissipation
dissipation channel
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陈思哲
盛况
汪涛
郭清
谢刚
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Zhejiang University ZJU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

本发明提供一种新型的功率模块，包括外壳、衬底、基板、芯片，衬底连接散热器，芯片与基板固定连接，基板与衬底固定连接，功率模块内部具有冷却介质流经回路，冷却介质流经回路包括散热通道、冷却介质入口、冷却介质出口，散热通道、冷却介质入口、冷却介质出口设置在衬底内部并与衬底一体成型。本发明将功率模块的散热集成到功率模块底部，通过水冷的散热方式进行，实现了直接对功率模块内部进行散热处理，规避了各种散热中间介质，可以避免采取不同散热器带来的特性差异，提高了散热效率，保证模块工作的稳定性。

Description

一种新型的功率模块
技术领域
本发明涉及功率模块。
背景技术
以绝缘栅双极型晶体管和金属氧化物场效应晶体管为主的功率模块，具有输出功率大并且发热量大等特点，有必要进行冷却，以确保它们的可靠运行。模块的散热条件对模块的特性起着至关重要的作用，常规的自然冷却效率较低，而强制风冷及水冷需要额外的装置，成本较高。目前，对于功率模块散热能力的改善主要从改变模块组成材料类型以及改变模块各层材料厚度入手，对模块自身结构的改变较少。同时，模块的设计通常与模块的使用截然分开。
对于常规的功率器件模块，模块的散热通常是通过在模块底部涂抹导热硅脂，并贴敷到风冷或者水冷散热器上实现的。但实际操作中，由于导热硅脂的厚度不同以及散热器大小差异，不同散热条件的功率模块具有的电学特性以及可靠性差别很大。
发明内容
本发明所要解决的技术问题是提供一种新型的功率模块，提高了功率模块的散热效率并消除散热能力差异。
本发明解决技术问题所采用的技术方案是：一种新型的功率模块，包括外壳、衬底、基板、芯片，衬底连接散热器，芯片与基板固定连接，基板与衬底固定连接，功率模块内部具有冷却介质流经回路。本发明在功率模块内部构造出冷却通道，将水冷技术引入功率模块本身，使得冷却介质直接作用于功率模块本身，规避了中间材料对功率模块散热性能的影响。
进一步地，冷却介质流经回路包括散热通道、冷却介质入口、冷却介质出口，散热通道、冷却介质入口、冷却介质出口设置在衬底内部并与衬底一体成型。作为直接与散热器相接触的部分，功率模块的衬底对功率模块的散热至关重要，在模块衬底中引入水冷通道将对功率模块的散热集成到底部通过水冷方式进行散热，可以避免采取不同散热器带来的特性差异，保证模块工作的稳定性。 
进一步地，冷却介质入口设置入口阀门,冷却介质出口设置出口阀门。
进一步地，所述功率模块为IGBT功率模块或者MOSFET功率模块。
作为优选，散热通道呈Z形分布在衬底内部。
作为优选，散热通道呈S形分布在衬底内部。
作为优选，散热通道呈波浪形分布在衬底内部。
Z形、S形或者波浪形的散热通道使得冷却介质回路均匀地分布在衬底内部，保证了功率模块散热的均匀性。
本发明的有益效果是：
1、本发明将功率模块的散热集成到功率模块底部，通过水冷的散热方式进行，实现了直接对功率模块内部进行散热处理，规避了各种散热中间介质，可以避免采取不同散热器带来的特性差异，提高了散热效率，保证模块工作的稳定性。
2、在模块衬底中引入水冷通道提高了模块的散热效率，由于模块的发热功率与电流的平方成正比，因此增加散热效率可以提高模块的电流导通能力，进而提高模块的功率密度。
附图说明
图1为本发明所提供的功率模块的结构示意图。
图2为本发明实施例1的功率模块衬底的结构示意图。
图3为本发明实施例2的功率模块衬底的结构示意图。
图4为本发明实施例3的功率模块衬底的结构示意图。
图中标号：1—外壳，2—衬底，3—基板，4—芯片，5—散热通道，6—冷却介质入口，7—冷却介质出口，8—入口阀门，9—出口阀门。
具体实施方式
实施例1，参照附图1、2。
如图1所示，本发明的IGBT功率模块或者MOSFET功率模块包括外壳1、衬底2、基板3、芯片4，衬底2连接散热器，芯片4与基板3通过锡焊连接，基板3与衬底4通过锡焊固定连接，外壳1罩在衬底4上。衬底4内部具有散热通道5以及与散热通道5相连通的冷却介质入口6和冷却介质出口7，冷却介质入口6、冷却介质出口7、散热通道5构成了冷却介质流经回路；冷却介质入口6和冷却介质出口7分别设置入口阀门8和出口阀门9。
如图2所示，散热通道5呈Z形分布在衬底4内部。制造过程中，通过一体加工成型的方式，在衬底4的内部加工出冷却介质流经回路。
使用时，将外部的冷却介质接入冷却介质入口6，流经散热通道5，从冷却介质出口7流出，完成对功率模块的散热过程。
本实施例中，散热通道5可以是一个或多个Z形通道，根据功率模块的大小和散热需要进行选择。
实施例2，参照附图1、3。
如图1所示，本发明的IGBT功率模块或者MOSFET功率模块包括外壳1、衬底2、基板3、芯片4，衬底2连接散热器，芯片4与基板3通过锡焊连接，基板3与衬底4通过锡焊固定连接，外壳1罩在衬底4上。衬底4内部具有散热通道5以及与散热通道5相连通的冷却介质入口6和冷却介质出口7，冷却介质入口6、冷却介质出口7、散热通道5构成了冷却介质流经回路；冷却介质入口6和冷却介质出口7分别设置入口阀门8和出口阀门9。
如图3所示，散热通道5呈S形分布在衬底4内部。制造过程中，通过一体加工成型的方式，在衬底4的内部加工出冷却介质流经回路。
使用时，将外部的冷却介质接入冷却介质入口6，流经散热通道5，从冷却介质出口7流出，完成对功率模块的散热过程。
本实施例中，散热通道5可以是一个或多个S形通道，根据功率模块的大小和散热需要进行选择。
实施例3，参照附图1、4。
如图1所示，本发明的IGBT功率模块或者MOSFET功率模块包括外壳1、衬底2、基板3、芯片4，衬底2连接散热器，芯片4与基板3通过锡焊连接，基板3与衬底4通过锡焊固定连接，外壳1罩在衬底4上。衬底4内部具有散热通道5以及与散热通道5相连通的冷却介质入口6和冷却介质出口7，冷却介质入口6、冷却介质出口7、散热通道5构成了冷却介质流经回路；冷却介质入口6和冷却介质出口7分别设置入口阀门8和出口阀门9。
如图4所示，散热通道5呈波浪形分布在衬底4内部。制造过程中，通过一体加工成型的方式，在衬底4的内部加工出冷却介质流经回路。
使用时，将外部的冷却介质接入冷却介质入口6，流经散热通道5，从冷却介质出口7流出，完成对功率模块的散热过程。
本实施例中，散热通道5可以是一个或多个波浪形通道，根据功率模块的大小和散热需要进行选择。
上述具体实施例用于结合附图对本发明的技术方案作进一步具体说明，但并不能将本发明的范围局限于具体实施方式的内容。本领域技术人员应该认识到，本发明涵盖了权利要求书范围内所有可能包括的所有备选方案、改进方案和等效方案。

Claims (7)

1.一种新型的功率模块，包括外壳(1)、衬底(2)、基板(3)、芯片(4)，衬底(4)连接散热器，芯片(4)与基板(3)固定连接，基板(3)与衬底(4)固定连接，其特征是：所述功率模块内部具有冷却介质流经回路。
2.根据权利要求1所述的一种新型的功率模块，其特征是：冷却介质流经回路包括散热通道(5)、冷却介质入口(6)、冷却介质出口(7)，散热通道(5)、冷却介质入口(6)、冷却介质出口(7)设置在衬底(4)内部并与衬底(4)一体成型。
3.根据权利要求2所述的一种新型的功率模块，其特征是：冷却介质入口(6)设置入口阀门(8),冷却介质出口设置出口阀门(9)。
4.根据权利要求2所述的一种新型的功率模块，其特征是：散热通道(5)呈Z形分布在衬底(4)内部。
5.根据权利要求3所述的一种新型的功率模块，其特征是：散热通道(5)呈S形分布在衬底(4)内部。
6.根据权利要求4所述的一种新型的功率模块，其特征是：散热通道(5)呈波浪形分布在衬底(4)内部。
7.根据权利要求1所述的一种新型的功率模块，其特征是：所述功率模块为IGBT功率模块或者MOSFET功率模块。
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CN110463369A (zh) * 2017-03-21 2019-11-15 Lg伊诺特有限公司 变换器
US10925181B2 (en) 2017-03-21 2021-02-16 Lg Innotek Co., Ltd. Converter
CN110463369B (zh) * 2017-03-21 2021-03-09 Lg伊诺特有限公司 变换器
US11304336B2 (en) 2017-03-21 2022-04-12 Lg Innotek Co., Ltd. Converter

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