CN103021970B - 具有传感器的集成电路以及制造这种集成电路的方法 - Google Patents
具有传感器的集成电路以及制造这种集成电路的方法 Download PDFInfo
- Publication number
- CN103021970B CN103021970B CN201210350921.1A CN201210350921A CN103021970B CN 103021970 B CN103021970 B CN 103021970B CN 201210350921 A CN201210350921 A CN 201210350921A CN 103021970 B CN103021970 B CN 103021970B
- Authority
- CN
- China
- Prior art keywords
- sensor element
- protective layer
- integrated circuit
- passage
- encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
- G01D11/245—Housings for sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11182122.9 | 2011-09-21 | ||
EP11182122A EP2573804A1 (en) | 2011-09-21 | 2011-09-21 | Integrated circuit with sensor and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103021970A CN103021970A (zh) | 2013-04-03 |
CN103021970B true CN103021970B (zh) | 2016-11-16 |
Family
ID=46785317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210350921.1A Active CN103021970B (zh) | 2011-09-21 | 2012-09-19 | 具有传感器的集成电路以及制造这种集成电路的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9070695B2 (zh) |
EP (2) | EP2573804A1 (zh) |
CN (1) | CN103021970B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9190379B2 (en) * | 2012-09-27 | 2015-11-17 | Apple Inc. | Perimeter trench sensor array package |
US9269597B2 (en) | 2013-01-23 | 2016-02-23 | Microchip Technology Incorporated | Open cavity plastic package |
US9327965B2 (en) * | 2013-03-15 | 2016-05-03 | Versana Micro Inc | Transportation device having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor |
KR20150072687A (ko) * | 2013-12-20 | 2015-06-30 | 삼성전기주식회사 | 가스 센서 패키지 |
KR20150090705A (ko) * | 2014-01-29 | 2015-08-06 | 삼성전기주식회사 | 센서 패키지 및 그 제조 방법 |
EP2952886B1 (en) * | 2014-06-06 | 2020-09-23 | Sensirion AG | Method for manufacturing a gas sensor package |
CN104201116B (zh) * | 2014-09-12 | 2018-04-20 | 苏州晶方半导体科技股份有限公司 | 指纹识别芯片封装方法和封装结构 |
US20160360622A1 (en) * | 2015-06-02 | 2016-12-08 | Microchip Technology Incorporated | Integrated Circuit With Sensor Printed In Situ |
EP3168866B1 (en) | 2015-11-16 | 2020-12-30 | ams AG | Semiconductor humidity sensor device and manufacturing method thereof |
US9899290B2 (en) * | 2016-03-23 | 2018-02-20 | Nxp Usa, Inc. | Methods for manufacturing a packaged device with an extended structure for forming an opening in the encapsulant |
CN107643121A (zh) * | 2016-07-20 | 2018-01-30 | 国民技术股份有限公司 | 传感器阵列及其排布方法 |
US10388684B2 (en) | 2016-10-04 | 2019-08-20 | Semiconductor Components Industries, Llc | Image sensor packages formed using temporary protection layers and related methods |
CN106455317A (zh) * | 2016-11-30 | 2017-02-22 | 维沃移动通信有限公司 | 一种线路板结构及应用其的手机 |
JP6766620B2 (ja) * | 2016-12-02 | 2020-10-14 | 株式会社デンソー | 物理量計測装置、異常検出装置、及び異常検出方法 |
US11437292B2 (en) * | 2019-10-11 | 2022-09-06 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
CN114550610A (zh) * | 2020-11-26 | 2022-05-27 | 创新服务股份有限公司 | 具有触控功能的led显示屏幕 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60257546A (ja) * | 1984-06-04 | 1985-12-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
NL1003315C2 (nl) * | 1996-06-11 | 1997-12-17 | Europ Semiconductor Assembly E | Werkwijze voor het inkapselen van een geïntegreerde halfgeleiderschake- ling. |
AU6719000A (en) * | 1999-12-08 | 2001-06-18 | Sensirion Ag | Capacitive sensor |
US6489178B2 (en) * | 2000-01-26 | 2002-12-03 | Texas Instruments Incorporated | Method of fabricating a molded package for micromechanical devices |
AT410727B (de) * | 2000-03-14 | 2003-07-25 | Austria Mikrosysteme Int | Verfahren zum unterbringen von sensoren in einem gehäuse |
US6379988B1 (en) * | 2000-05-16 | 2002-04-30 | Sandia Corporation | Pre-release plastic packaging of MEMS and IMEMS devices |
EP1246235A1 (en) * | 2001-03-26 | 2002-10-02 | European Semiconductor Assembly (Eurasem) B.V. | Method for encapsulating a chip having a sensitive surface |
US7304362B2 (en) * | 2002-05-20 | 2007-12-04 | Stmicroelectronics, Inc. | Molded integrated circuit package with exposed active area |
US7109574B2 (en) * | 2002-07-26 | 2006-09-19 | Stmicroelectronics, Inc. | Integrated circuit package with exposed die surfaces and auxiliary attachment |
JP4860793B2 (ja) * | 2005-05-19 | 2012-01-25 | 株式会社日本自動車部品総合研究所 | 湿度センサの製造方法 |
TWI289916B (en) * | 2006-03-24 | 2007-11-11 | Advanced Semiconductor Eng | Chip package and package process thereof |
TWM320180U (en) * | 2007-04-16 | 2007-10-01 | Lingsen Precision Ind Ltd | Package structure of optical sensor chip |
US20080258318A1 (en) * | 2007-04-20 | 2008-10-23 | Nec Electronics Corporation | Semiconductor device |
JP4450031B2 (ja) * | 2007-08-22 | 2010-04-14 | 株式会社デンソー | 半導体部品 |
JP2009239106A (ja) * | 2008-03-27 | 2009-10-15 | Sony Corp | 半導体装置及び同半導体装置の製造方法 |
EP2154713B1 (en) * | 2008-08-11 | 2013-01-02 | Sensirion AG | Method for manufacturing a sensor device with a stress relief layer |
US7842544B2 (en) * | 2009-02-20 | 2010-11-30 | National Semiconductor Corporation | Integrated circuit micro-module |
US8124953B2 (en) * | 2009-03-12 | 2012-02-28 | Infineon Technologies Ag | Sensor device having a porous structure element |
EP2492239B1 (en) | 2011-02-22 | 2020-08-26 | Sciosense B.V. | Integrated circuit with sensor and method of manufacturing such an integrated circuit |
US8759153B2 (en) * | 2011-09-06 | 2014-06-24 | Infineon Technologies Ag | Method for making a sensor device using a graphene layer |
-
2011
- 2011-09-21 EP EP11182122A patent/EP2573804A1/en not_active Withdrawn
-
2012
- 2012-09-10 EP EP12183675.3A patent/EP2573806B1/en active Active
- 2012-09-11 US US13/610,692 patent/US9070695B2/en active Active
- 2012-09-19 CN CN201210350921.1A patent/CN103021970B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20130069176A1 (en) | 2013-03-21 |
EP2573806A1 (en) | 2013-03-27 |
EP2573806B1 (en) | 2017-02-01 |
US9070695B2 (en) | 2015-06-30 |
EP2573804A1 (en) | 2013-03-27 |
CN103021970A (zh) | 2013-04-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103021970B (zh) | 具有传感器的集成电路以及制造这种集成电路的方法 | |
US7268436B2 (en) | Electronic device with cavity and a method for producing the same | |
US8330268B2 (en) | Semiconductor package and manufacturing method thereof | |
US8963314B2 (en) | Packaged semiconductor product and method for manufacture thereof | |
US20090121313A1 (en) | Semiconductor device with at least one air gap provided in chip outer area | |
US20110241178A1 (en) | Semiconductor device and method of manufacturing the same | |
US9799588B2 (en) | Chip package and manufacturing method thereof | |
US9793106B2 (en) | Reliability improvement of polymer-based capacitors by moisture barrier | |
US11193821B2 (en) | Ambient light sensor with light protection | |
US20100248425A1 (en) | Chip-size-package semiconductor chip and manufacturing method | |
TW201640625A (zh) | 晶片封裝體及其製造方法 | |
US7772682B1 (en) | Moisture protection metal enclosure | |
US10930602B2 (en) | Semiconductor device and method for fabricating the same | |
US20050176168A1 (en) | Package structure of optical device and method for manufacturing the same | |
US8188604B2 (en) | Semiconductor device incorporating preventative measures to reduce cracking in exposed electrode layer | |
US20130341807A1 (en) | Semiconductor package structure | |
CN109830469B (zh) | 半导体封装件及其制造方法 | |
US9478677B2 (en) | Electronic device comprising an optical sensor chip | |
US20090239341A1 (en) | Ic packaging process | |
US9997492B2 (en) | Optically-masked microelectronic packages and methods for the fabrication thereof | |
JP6757293B2 (ja) | 化合物半導体集積回路及びその作製方法 | |
CN210167347U (zh) | 集成电路的封装结构及半导体封装装置 | |
US20210202340A1 (en) | Semiconductor device package structure and method for fabricating the same | |
KR20100030500A (ko) | 반도체 패키지 및 그의 제조방법 | |
KR20020055034A (ko) | 이미지센서 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: AMS INTERNATIONAL LTD. Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20150818 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150818 Address after: La Ville de Perth Applicant after: AMS INTERNATIONAL CO., LTD. Address before: Holland Ian Deho Finn Applicant before: Koninkl Philips Electronics NV |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201203 Address after: Eindhoven Patentee after: Theo Testing Co.,Ltd. Address before: La Ville de Perth Patentee before: AMS INTERNATIONAL AG |
|
TR01 | Transfer of patent right |