CN103021782A - 一种离子注入系统 - Google Patents
一种离子注入系统 Download PDFInfo
- Publication number
- CN103021782A CN103021782A CN2012105333083A CN201210533308A CN103021782A CN 103021782 A CN103021782 A CN 103021782A CN 2012105333083 A CN2012105333083 A CN 2012105333083A CN 201210533308 A CN201210533308 A CN 201210533308A CN 103021782 A CN103021782 A CN 103021782A
- Authority
- CN
- China
- Prior art keywords
- ion implant
- implant systems
- indium
- injected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 title abstract description 6
- 238000002513 implantation Methods 0.000 claims abstract description 42
- 239000007789 gas Substances 0.000 claims description 58
- 150000002500 ions Chemical class 0.000 claims description 41
- 229910052738 indium Inorganic materials 0.000 claims description 38
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 38
- 238000002347 injection Methods 0.000 claims description 38
- 239000007924 injection Substances 0.000 claims description 38
- 239000007943 implant Substances 0.000 claims description 33
- 239000000126 substance Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 230000005484 gravity Effects 0.000 abstract description 4
- 239000002923 metal particle Substances 0.000 abstract description 2
- 230000007246 mechanism Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000013528 metallic particle Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910001449 indium ion Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210533308.3A CN103021782B (zh) | 2012-12-11 | 2012-12-11 | 一种离子注入系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210533308.3A CN103021782B (zh) | 2012-12-11 | 2012-12-11 | 一种离子注入系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103021782A true CN103021782A (zh) | 2013-04-03 |
CN103021782B CN103021782B (zh) | 2016-02-03 |
Family
ID=47970265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210533308.3A Active CN103021782B (zh) | 2012-12-11 | 2012-12-11 | 一种离子注入系统 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103021782B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109524285A (zh) * | 2017-09-19 | 2019-03-26 | 中国电子科技集团公司第四十八研究所 | 一种离子束刻蚀设备 |
CN113984788A (zh) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | 一种通过光学检测仪器对超低温离子注入设备监测的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273027A (ja) * | 2002-03-14 | 2003-09-26 | Mitsubishi Heavy Ind Ltd | 高周波電力供給構造およびそれを備えたプラズマcvd装置 |
CN101142663A (zh) * | 2004-11-19 | 2008-03-12 | 科学技术研究院 | 掺杂的金属氧化物膜和制造该掺杂的金属氧化物膜的系统 |
CN102312210A (zh) * | 2010-07-05 | 2012-01-11 | 中国科学院微电子研究所 | 一种等离子体浸没离子注入系统 |
CN102808162A (zh) * | 2011-05-31 | 2012-12-05 | 无锡华润上华半导体有限公司 | 铟离子产生装置和方法 |
-
2012
- 2012-12-11 CN CN201210533308.3A patent/CN103021782B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273027A (ja) * | 2002-03-14 | 2003-09-26 | Mitsubishi Heavy Ind Ltd | 高周波電力供給構造およびそれを備えたプラズマcvd装置 |
CN101142663A (zh) * | 2004-11-19 | 2008-03-12 | 科学技术研究院 | 掺杂的金属氧化物膜和制造该掺杂的金属氧化物膜的系统 |
CN102312210A (zh) * | 2010-07-05 | 2012-01-11 | 中国科学院微电子研究所 | 一种等离子体浸没离子注入系统 |
CN102808162A (zh) * | 2011-05-31 | 2012-12-05 | 无锡华润上华半导体有限公司 | 铟离子产生装置和方法 |
Non-Patent Citations (1)
Title |
---|
周智华等: "高纯铟的制备方法", 《矿冶工程》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109524285A (zh) * | 2017-09-19 | 2019-03-26 | 中国电子科技集团公司第四十八研究所 | 一种离子束刻蚀设备 |
CN109524285B (zh) * | 2017-09-19 | 2021-06-11 | 中国电子科技集团公司第四十八研究所 | 一种离子束刻蚀设备 |
CN113984788A (zh) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | 一种通过光学检测仪器对超低温离子注入设备监测的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103021782B (zh) | 2016-02-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5610543B2 (ja) | イオンソース | |
US8357912B2 (en) | Techniques for providing a multimode ion source | |
CN106548918A (zh) | 一种射频和直流混合驱动的磁化容性耦合等离子体源 | |
TWI541853B (zh) | 具有電漿鞘電位之基板的非雙極電子電漿(nep)處理用處理系統 | |
TW202016968A (zh) | 間接加熱式陰極離子源及將不同的摻雜物離子化的方法 | |
CN102969110B (zh) | 一种提高钕铁硼磁力矫顽力的装置及方法 | |
TW201301389A (zh) | 用以處理基板之裝置 | |
CN109906496A (zh) | 具有动态体积控制的rf离子源 | |
CN103871812B (zh) | 一种离子注入设备 | |
CN108475609B (zh) | 产生离子束的装置 | |
CN103021782A (zh) | 一种离子注入系统 | |
TWI720101B (zh) | 間接加熱式陰極離子源與用於離子源室內的斥拒極 | |
KR101899206B1 (ko) | 이온 소스 및 이의 열전자 생성 방법 | |
CN101045989B (zh) | 大面积直流脉冲等离子体基低能离子注入装置 | |
CN103866394B (zh) | 一种等离子体浸没离子注入系统 | |
WO2010093871A2 (en) | Techniques for improving extracted ion beam quality using high transparency electrodes | |
KR101562785B1 (ko) | 이중 플라즈마 이온 소오스 | |
CN103903943A (zh) | 离子注入系统 | |
US9922800B2 (en) | System and method for generating ions in an ion source | |
CN104221477B (zh) | 等离子体产生装置、蒸镀装置以及等离子体产生方法 | |
CN106971930A (zh) | 一种多功能双灯丝离子源 | |
KR101383166B1 (ko) | 폴(Pole) 타입의 플라즈마 발생 안테나를 이용한 이온빔 소스 추출장치 및 가공물의 이온처리 장치 | |
CN101922046B (zh) | 一种等离子体浸没注入装置 | |
JP2021518668A (ja) | 分離した裏側ヘリウム供給システム | |
JP2012216767A (ja) | イオン注入方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190603 Address after: Room 820, 8th Floor, Building 1, 13 Guocheng Road, Shunqing District, Nanchong City, Sichuan Province Patentee after: Zhongke Jiuwei Technology Co.,Ltd. Address before: 100029 Microelectronics Institute, Chinese Academy of Sciences, 3 north earth road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: An ion implantation system Effective date of registration: 20231109 Granted publication date: 20160203 Pledgee: Sichuan Tianfu Bank Co.,Ltd. Business Department Pledgor: Zhongke Jiuwei Technology Co.,Ltd. Registration number: Y2023980064475 |
|
CP03 | Change of name, title or address |
Address after: Room 820, 8th Floor, Building 1, 13 Guocheng Road, Shunqing District, Nanchong City, Sichuan Province Patentee after: Zhongke Jiuwei Technology Co.,Ltd. Country or region after: China Address before: Room 820, 8th Floor, Building 1, 13 Guocheng Road, Shunqing District, Nanchong City, Sichuan Province Patentee before: Zhongke Jiuwei Technology Co.,Ltd. Country or region before: China |