CN103019482A

CN103019482A - Novel optic device for infrared touch screen

Info

Publication number: CN103019482A
Application number: CN 201310009556
Authority: CN
Inventors: 张倩
Original assignee: SUZHOU BAINASI OPTICAL TECHNOLOGY Co Ltd
Current assignee: SUZHOU BAINASI OPTICAL TECHNOLOGY Co Ltd
Priority date: 2013-01-10
Filing date: 2013-01-10
Publication date: 2013-04-03

Abstract

The invention designs an optic device utilizing a single infrared semiconductor laser to realize infrared array and mainly applied to an infrared touch screen. Generally, infrared semiconductor lasers arrays identical with the arrays in number and corresponding shaping condenser lenses are required to arrange on the periphery of the touch screen to realize the infrared arrays, this realizing way is high in cost, and inconvenience in maintenance is caused by many semiconductor lasers. The novel optic device can realize identical optic effect, and cost is reduced.

Description

A kind of Novel infrared touch panel optical devices

Technical field:

The present invention relates to one group of optical element combination, the optical devices of a kind of laser infrared linear array for realizing infrared touch panel of specific design.

Background technology:

The principle of work of infrared touch panel is to be covered with infrared receiver tube and semiconductor infrared laser instrument around touch-screen, these infrared laser lines are arranged along X-axis and Y-axis in touch screen surface, form a light net that is become by infrared ray cloth, when having object (finger, band gloves or any touch object) to enter the infrared light net to stop the infrared ray transmitter and receiver in somewhere, this puts the ultrared power that the receiving tube of both direction anyhow receives and will change, and equipment just can know where touch by the variation of understanding ultrared reception condition.Because the principle of work of infrared touch panel itself can accomplish during use without pressure (referring to touch body to the applied pressure of touch-screen own) touch work, so touch-screen can be accomplished without glass work.Infrared touch panel can carry out interpolation calculation to the each point data by hardware design and software programming, can reach the resolution of 4096 X 4096.In a flash same when infrared touch panel is worked, only have a pair of infrared tube (referring to that power valve and that physical location is corresponding receives only pipe) carrying out datamation, circuit is by high-frequency data acquisition reaches the effect of rapid reaction to infrared tube, so the reaction velocity of touch-screen is very fast.

Usually to realize infrared array, need to be at touch-screen periphery infrared semiconductor laser array and the corresponding shaping condenser lens identical with array quantity.This implementation cost is higher, and because semiconductor laser quantity causes greatly safeguarding inconvenience.

Summary of the invention:

The objective of the invention is to use single infrared semiconductor laser to realize infrared array.So the invention provides such one group of optical element, it comprises: infrared semiconductor laser, laser shaping condenser lens, diffraction optical element, reflection unit, half reflection device and prism wedge group.

At first the laser that sends of infrared semiconductor laser is through laser shaping condenser lens optically focused, and then laser is divided into 3 bundle laser accurately through diffraction optical element claimed in claim 4, a branch of Zero-order diffractive chief ray and two bundle first-order diffraction light.The intensity of first-order diffraction light is 25 times of chief ray.

Enter in the reflection unit center window of the light of first-order diffraction by claim 5, between the half reflection device of reflection unit and claim 6, repeatedly be reflected.The transmitance of half reflection device is 4%, and reflectivity is 94%, and this semi-permeable diaphragm can be realized by the optics sputter coating.

Penetrating the light intensity of half reflection device decays from the chief ray to the edge successively.The amplitude of single decay is the needs that satisfy infrared touch panel through calculating.If the light intensity with chief ray is decided to be 100%, then other the 1st light intensity of chief ray side is that 100%, the 2 light intensity is that 92%, the 3 light intensity is that 85%, the 4 light intensity is 78%, and by that analogy, the light intensity of the 19th light is 23%.Thereby whole optical system can provide 39 Infrared, centered by the intensity of the decreased light in edge 23% of light intensity.

The prism wedge group effect be to adjust the first-order diffraction light array that comes and goes reflection parallel with primary optical axis.Gap between two prisms is used for by Zero-order diffractive light, i.e. chief ray.

Description of drawings

Fig. 1 is the optical devices embodiment of the laser infrared linear array of claim 1.

Fig. 2 is the embodiment of the diffraction optical element of claim 4.

Fig. 3 is the embodiment of the reflection unit of claim 5.

Embodiment;

Below with reference to Fig. 1, Fig. 1 draws the optical devices embodiment with the laser infrared linear array of claim 1.Its optical devices comprise: infrared semiconductor laser 1; Laser shaping condenser lens 2; Diffraction optical element 3; Reflection unit 4; Half-reflecting mirror 5; Prism wedge group 6.

Infrared semiconductor laser 1 wavelength is that 900nm is between the 1100nm.Laser shaping condenser lens 2 is plano-convex aspheric surface glass lens, and diameter is 6mm, and focal length is 4mm.Infrared laser by pack, is divided into 3 bundle laser through lens 2 when arriving diffraction optical element 3, comprise two bundle first-order diffraction light and a branch of Zero-order diffractive light.

This three beams of laser enters the reflection unit 4 middle not windows of plated film.First-order diffraction light is wherein constantly reflected between half reflection device 5 and reflection unit.The half reflection device is 14mm to the distance of reflection unit, and light penetration is 4%, and reflectivity is 94%.Light can both see through 4% light intensity at every turn, and remaining light is continued reflection.Because penetrating the first-order diffraction light of half reflection device and the angle of chief ray is 19.5 degree, so need prism wedge group 6 that light refraction is parallel with primary optical axis.Prism pitch is 5mm.Chief ray can pass through between two prisms.

Among Fig. 1 a be the half reflection device to the distance of reflection unit, be 14mm.

B is the thickness of total optical devices among Fig. 1, and namely the distance from diffraction optical element to the prism group end is 20mm.

Below with reference to Fig. 2, Fig. 2 draws the embodiment of diffraction optical element.Laser 7 enters diffraction optical element 3 and is divided into light 8,9,10.Wherein light 8 and light 10 are first-order diffraction light, and the angle d between the Zero-order diffractive light 9 is 19.5 degree.

Below with reference to Fig. 3, Fig. 3 has drawn the detail view of reflection unit 4 in the centre position.The left side of reflection unit is plated film not, the wide e of the uncoated window 11 in right side be 5mm. wherein the center of window on primary optical axis.

Claims

1. one kind is used single infrared semiconductor laser realization to be used for the optical devices of the infrared array of touch-screen, comprise such one group of optical element: infrared semiconductor laser, laser shaping condenser lens, diffraction optical element, reflection unit, half reflection device and prism wedge group.

2. according to the optical devices of the described generation infrared array of claim one, infrared semiconductor laser wavelength wherein is that 900nm is between the 1100nm.

3. according to the optical devices of the described generation infrared array of claim one, wherein the laser shaping condenser lens is plano-convex aspheric surface glass lens, and diameter is 6mm, focal length 4mm.

4. according to the optical devices of the described generation infrared array of claim one ,Wherein the first-order diffraction of diffraction optical element is the two-beam line, with Zero-order diffractive light be that the angle of chief ray is 19.5 degree; The light intensity of single bundle first-order diffraction light is about 25 times of Zero-order diffractive light intensity.

5. according to the optical devices of the described generation infrared array of claim one, its reflection unit is vertical with primary optical axis, reflection unit is the glass that single face is coated with total reflection film, and the center of glass rectangular area is plating total reflection film not in the 2.5mm scope up and down in the primary optical axis position.

6. according to the optical devices of the described generation infrared array of claim one, half reflection device wherein is parallel with the reflection unit of claim five; Half reflection is 14mm to the distance of reflection unit, and light penetration is 4%, and reflectivity is 94%.

7. according to the optical devices of the described generation infrared array of claim one, prism wedge group wherein is comprised of two prism wedges; Prism pitch is 5mm; Chief ray can pass through between two prisms, and the effect of each prism wedge is that the light of first-order diffraction and the light refraction between two mirror surfaces are become chief ray is parallel.