CN103002649B - 一种电感耦合式的等离子体处理装置及其基片处理方法 - Google Patents

一种电感耦合式的等离子体处理装置及其基片处理方法 Download PDF

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Publication number
CN103002649B
CN103002649B CN201110269393.2A CN201110269393A CN103002649B CN 103002649 B CN103002649 B CN 103002649B CN 201110269393 A CN201110269393 A CN 201110269393A CN 103002649 B CN103002649 B CN 103002649B
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force
magnetic line
parts
magnetic
reaction chamber
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CN103002649A (zh
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刘忠笃
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Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CN201110269393.2A priority Critical patent/CN103002649B/zh
Priority to TW100146054A priority patent/TW201313077A/zh
Priority to US13/597,785 priority patent/US20130062311A1/en
Publication of CN103002649A publication Critical patent/CN103002649A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201110269393.2A 2011-09-13 2011-09-13 一种电感耦合式的等离子体处理装置及其基片处理方法 Active CN103002649B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201110269393.2A CN103002649B (zh) 2011-09-13 2011-09-13 一种电感耦合式的等离子体处理装置及其基片处理方法
TW100146054A TW201313077A (zh) 2011-09-13 2011-12-13 一種電感耦合式的等離子體處理裝置及其基片處理方法
US13/597,785 US20130062311A1 (en) 2011-09-13 2012-08-29 Inductively coupled plasma processing apparatus and method for processing substrate with the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110269393.2A CN103002649B (zh) 2011-09-13 2011-09-13 一种电感耦合式的等离子体处理装置及其基片处理方法

Publications (2)

Publication Number Publication Date
CN103002649A CN103002649A (zh) 2013-03-27
CN103002649B true CN103002649B (zh) 2016-09-14

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CN201110269393.2A Active CN103002649B (zh) 2011-09-13 2011-09-13 一种电感耦合式的等离子体处理装置及其基片处理方法

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US (1) US20130062311A1 (https=)
CN (1) CN103002649B (https=)
TW (1) TW201313077A (https=)

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KR101314667B1 (ko) * 2012-01-04 2013-10-04 최대규 자속 채널 결합 플라즈마 반응기
US9257265B2 (en) * 2013-03-15 2016-02-09 Applied Materials, Inc. Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
US20180130639A1 (en) * 2015-05-04 2018-05-10 Michael Nicholas Vranich External plasma system
EA035003B1 (ru) * 2016-03-16 2020-04-16 Общество С Ограниченной Ответственностью "Изовак Технологии" Вакуумная установка для нанесения тонкопленочных покрытий и способ нанесения на ней оптических покрытий
CN108339200A (zh) * 2018-04-03 2018-07-31 山西金色阳光科技有限公司 一种高效节能环保磁疗装置
CN109496050A (zh) * 2019-01-03 2019-03-19 厦门大学 一种分层等离子体产生装置
CN112768333B (zh) * 2019-11-05 2025-07-15 汉民科技股份有限公司 磁力线遮蔽控制反应腔室磁场的蚀刻机结构
CN111250016B (zh) * 2020-02-06 2022-08-05 徐国栋 一种用于治疗肿瘤及皮肤病的液体式等离子体装置
WO2022010661A1 (en) * 2020-07-09 2022-01-13 Lam Research Corporation Adjustable geometry trim coil
CN116171651A (zh) * 2020-09-18 2023-05-26 朗姆研究公司 使用磁场的等离子体放电均匀性控制
CN120417206A (zh) * 2025-07-02 2025-08-01 上海谙邦半导体设备有限公司 感应线圈结构调节组件及等离子体处理设备

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US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US6015476A (en) * 1998-02-05 2000-01-18 Applied Materials, Inc. Plasma reactor magnet with independently controllable parallel axial current-carrying elements
US6321681B1 (en) * 1997-10-10 2001-11-27 European Community (Ec) Method and apparatus to produce large inductive plasma for plasma processing
CN101998749A (zh) * 2010-11-26 2011-03-30 中微半导体设备(上海)有限公司 电感耦合型等离子体处理装置
US7969140B2 (en) * 2003-02-21 2011-06-28 Liaisons Electroniques-Mecaniques Lem S.A. Magnetic field sensor and electrical current sensor therewith

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JPH0562940A (ja) * 1991-09-03 1993-03-12 Sony Corp 矩形基板のドライエツチング装置
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
TW249313B (https=) * 1993-03-06 1995-06-11 Tokyo Electron Co
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
JP2929275B2 (ja) * 1996-10-16 1999-08-03 株式会社アドテック 透磁コアを有する誘導結合型−平面状プラズマの発生装置
US5824602A (en) * 1996-10-21 1998-10-20 The United States Of America As Represented By The United States Department Of Energy Helicon wave excitation to produce energetic electrons for manufacturing semiconductors
EP1126504A1 (en) * 2000-02-18 2001-08-22 European Community Method and apparatus for inductively coupled plasma treatment
JP2003323997A (ja) * 2002-04-30 2003-11-14 Lam Research Kk プラズマ安定化方法およびプラズマ装置
JP4175021B2 (ja) * 2002-05-01 2008-11-05 株式会社島津製作所 高周波誘導結合プラズマ生成装置およびプラズマ処理装置
US7255774B2 (en) * 2002-09-26 2007-08-14 Tokyo Electron Limited Process apparatus and method for improving plasma production of an inductively coupled plasma
KR100542740B1 (ko) * 2002-11-11 2006-01-11 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
KR100720989B1 (ko) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 멀티 챔버 플라즈마 프로세스 시스템
TWI398926B (zh) * 2006-04-25 2013-06-11 Gen Co Ltd 具有與磁通通道耦合之電漿室的電漿反應器
US20080124254A1 (en) * 2006-05-22 2008-05-29 Dae-Kyu Choi Inductively Coupled Plasma Reactor
US7884551B2 (en) * 2006-12-01 2011-02-08 Shunko, Inc. RF plasma source with quasi-closed solenoidal inductor
US7969096B2 (en) * 2006-12-15 2011-06-28 Mks Instruments, Inc. Inductively-coupled plasma source

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US6321681B1 (en) * 1997-10-10 2001-11-27 European Community (Ec) Method and apparatus to produce large inductive plasma for plasma processing
US6015476A (en) * 1998-02-05 2000-01-18 Applied Materials, Inc. Plasma reactor magnet with independently controllable parallel axial current-carrying elements
US7969140B2 (en) * 2003-02-21 2011-06-28 Liaisons Electroniques-Mecaniques Lem S.A. Magnetic field sensor and electrical current sensor therewith
CN101998749A (zh) * 2010-11-26 2011-03-30 中微半导体设备(上海)有限公司 电感耦合型等离子体处理装置

Also Published As

Publication number Publication date
US20130062311A1 (en) 2013-03-14
TW201313077A (zh) 2013-03-16
CN103002649A (zh) 2013-03-27
TWI581673B (https=) 2017-05-01

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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.

Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc.

CP01 Change in the name or title of a patent holder