CN103000696A - Power diode device structure allowing for increasing of testing precision of forward characteristics - Google Patents
Power diode device structure allowing for increasing of testing precision of forward characteristics Download PDFInfo
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- CN103000696A CN103000696A CN2011102650424A CN201110265042A CN103000696A CN 103000696 A CN103000696 A CN 103000696A CN 2011102650424 A CN2011102650424 A CN 2011102650424A CN 201110265042 A CN201110265042 A CN 201110265042A CN 103000696 A CN103000696 A CN 103000696A
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Abstract
The invention discloses a power diode device structure allowing for increasing of testing precision of forward characteristics. The power diode structure comprises a cell and a terminal area, wherein the terminal area is disposed on the periphery of the cell. A cathode of the device is led out from the back of the cathode, the upper portion of the cathode of the device is provided with a substrate, and the upper portion of the substrate is provided with an epitaxial area; an anode of the device is located on the surface of the epitaxial area and comprises a first anode and a second anode, the second anode is located in the first anode, the second anode and the first anode are electrically relatively independent and are respectively provided with outgoing electrodes; and size of the anode is smaller than that of the first anode. Low current is applied on the second anode, obtained current density is equal to that of the whole device under applied rated current, and accordingly accurate testing of forward characteristics of the power diode device can be achieved, spontaneous heating effect of the device is reduced and the requirements of device evaluation for power capability of a testing device are lowered.
Description
Technical field
The present invention relates to a kind of semiconductor device structure, be specifically related to a kind of power diode device architecture that can improve the forward characteristic measuring accuracy.
Background technology
Power semiconductor is the inherent actuating force of the power-electronic system of development, especially at aspects such as energy savings, dynamically control, noise minimizings.Power semiconductor is mainly used in to be controlled the energy between the energy and the load, and should have the characteristics that precision is high, speed is fast and low in energy consumption.Power semiconductor is also gradually to large voltage, large electric current, even super large voltage (several thousand, volt up to ten thousand), super-large current (hundreds of, upper kiloampere) field develops gradually, and this just need to carry out accurate test evaluation to the power semiconductor of large voltage, large electric current.
But, because the spontaneous heating of the large large electric current of voltage, lower device can cause the inaccurate of test result.And the power of test of testing equipment does not catch up with the development of device, can not test this high power device.
Summary of the invention
Technical problem to be solved by this invention provides a kind of power diode device architecture that can improve the forward characteristic measuring accuracy, and it can improve the forward characteristic measuring accuracy of power diode device.
For solving the problems of the technologies described above, the technical solution that the present invention can improve the power diode device architecture of forward characteristic measuring accuracy is:
Comprise cellular, termination environment, the termination environment is arranged at the periphery of cellular; The negative electrode of described device is drawn by the device back side, and the top of device cathodes is substrate, and there is the epitaxial region top of substrate; The device anode is positioned at the surface of epitaxial region, and the device anode comprises the first anode, second plate two parts, and second plate is positioned at the first anode, and second plate and the first anode are relatively independent electrically, and each own electrode is drawn; The area of second plate is less than the first anode.
The area of described second plate is less than at least one order of magnitude of the first anode.
Described second plate is positioned at any position of the first anode.
Described second plate is independently one or parallel with one another a plurality of.
Described second plate is square, rectangle or circle.
The technique effect that the present invention can reach is:
The present invention applies a very little electric current at second plate, resulting current density is equal to whole device in the current density that applies under the rated current, can realize the accurate test of power diode device forward characteristic, thereby the spontaneous heating effect that has reduced device occurs, and has reduced the demand of device evaluation for the testing equipment power capability.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is the schematic diagram that the present invention can improve the power diode device architecture of forward characteristic measuring accuracy;
Fig. 2 is the schematic diagram of the first embodiment of the relative position of second plate of the present invention and the first anode;
Fig. 3 is the schematic diagram of the second embodiment of the relative position of second plate of the present invention and the first anode;
Fig. 4 is the schematic diagram of the 3rd embodiment of the relative position of second plate of the present invention and the first anode.
Description of reference numerals among the figure:
100 is cellular, and 200 is the termination environment,
10 is substrate, and 20 is the epitaxial region,
31 is the first anode, and 32 is second plate.
Embodiment
As shown in Figure 1, the present invention can improve the power diode device architecture of forward characteristic measuring accuracy, comprises cellular 100, termination environment 200, and termination environment 200 is arranged at the periphery of cellular 100;
Device cathodes is drawn by the device back side, and the top of device cathodes is substrate 10, and there is epitaxial region 20 top of substrate 10, and epitaxial region 20 is as the voltage basal seat area;
The device anode is positioned at the surface of epitaxial region 20 (being the voltage basal seat area), the device anode comprises the first anode 31, second plate 32 two parts, second plate 32 is positioned at the first anode 31, and second plate 32 is relatively independent electrically with the first anode 31, and each own electrode is drawn;
The area of second plate 32 is less than the first anode 31, and the area of second plate 32 is enough little than the first anode 31, and the area of second plate 32 can be similar to be ignored.
To shown in Figure 4, according to the needs of encapsulation or test, second plate 32 can be positioned at any position of the first anode 31 such as Fig. 2.
Claims (5)
1. the power diode device architecture that can improve the forward characteristic measuring accuracy comprises cellular, termination environment, and the termination environment is arranged at the periphery of cellular; It is characterized in that: the negative electrode of described device is drawn by the device back side, and the top of device cathodes is substrate, and there is the epitaxial region top of substrate; The device anode is positioned at the surface of epitaxial region, and the device anode comprises the first anode, second plate two parts, and second plate is positioned at the first anode, and second plate and the first anode are relatively independent electrically, and each own electrode is drawn; The area of second plate is less than the first anode.
2. the power diode device architecture that can improve the forward characteristic measuring accuracy according to claim 1, it is characterized in that: the area of described second plate is less than at least one order of magnitude of the first anode.
3. the power diode device architecture that can improve the forward characteristic measuring accuracy according to claim 1 and 2, it is characterized in that: described second plate is positioned at any position of the first anode.
4. the power diode device architecture that can improve the forward characteristic measuring accuracy according to claim 1 and 2 is characterized in that: described second plate is independently one or parallel with one another a plurality of.
5. the power diode device architecture that can improve the forward characteristic measuring accuracy according to claim 1 is characterized in that: described second plate is square, rectangle or circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102650424A CN103000696A (en) | 2011-09-08 | 2011-09-08 | Power diode device structure allowing for increasing of testing precision of forward characteristics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102650424A CN103000696A (en) | 2011-09-08 | 2011-09-08 | Power diode device structure allowing for increasing of testing precision of forward characteristics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103000696A true CN103000696A (en) | 2013-03-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102650424A Pending CN103000696A (en) | 2011-09-08 | 2011-09-08 | Power diode device structure allowing for increasing of testing precision of forward characteristics |
Country Status (1)
| Country | Link |
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| CN (1) | CN103000696A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020139991A1 (en) * | 2001-03-30 | 2002-10-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| CN101478000A (en) * | 2007-12-31 | 2009-07-08 | 万国半导体股份有限公司 | Improved sawtooth electric field drift region structure for power semiconductor devices |
-
2011
- 2011-09-08 CN CN2011102650424A patent/CN103000696A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020139991A1 (en) * | 2001-03-30 | 2002-10-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| CN101478000A (en) * | 2007-12-31 | 2009-07-08 | 万国半导体股份有限公司 | Improved sawtooth electric field drift region structure for power semiconductor devices |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140103 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20140103 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130327 |