CN102990480A - Optical component surface cleaning method based on ion beam polishing - Google Patents
Optical component surface cleaning method based on ion beam polishing Download PDFInfo
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- CN102990480A CN102990480A CN2012105539866A CN201210553986A CN102990480A CN 102990480 A CN102990480 A CN 102990480A CN 2012105539866 A CN2012105539866 A CN 2012105539866A CN 201210553986 A CN201210553986 A CN 201210553986A CN 102990480 A CN102990480 A CN 102990480A
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Abstract
The invention discloses an optical component surface cleaning method based on ion beam polishing. The method comprising the following steps of: machining the surface of a machining object by adopting an ion beam polishing method based on a low-energy ion sputtering principle by taking an optical component subjected to single-point diamond turning or magnetorheological polishing as the machining object; during the machining process, controlling ion beams to uniformly sweep the surface of the optical component; and after the machining is concluded, cleaning the surface of the optical component. The optical component surface cleaning method disclosed by the invention is simple and practicable, low in requirements on equipment, and capable of reducing the surface roughness of the optical surface component and removing the surface impurities of the optical component.
Description
Technical field
The present invention relates to the Ultraprecision Machining field of optical element, relate in particular to a kind of method of optical element surface being cleaned based on low energy ion sputter effect.
Background technology
KDP(KH
2PO
4) crystal is a kind of very good non-linear optical crystal material, have larger nonlinear optical coefficients, wider transmission region, good optical homogeneity and the higher characteristics such as laser damage threshold, now be widely used in the high-tech areas such as laser frequency-doubling device, parametric oscillation, Electro-optical Modulation, PZT (piezoelectric transducer) and fast optical switch based.Especially in inertial confinement laser fusion field, the KDP crystal is the best wavelength conversion optical element that improves nuclear fusion reaction efficient.
Inertial confinement fusion ICF laser aid requires the KDP crystal photoelement of heavy caliber, high-precision surface shape quality, high laser damage threshold, excellent surface roughness.Yet, low, the easy fragmentation of KDP crystal macrohardness, easily deliquescence, anisotropy, have the characteristic that relatively high thermal coefficient of expansion etc. is unfavorable for optics processing, processing proposes huge challenge to ultraprecise.Single-point diamond cutting (Single Point Diamond Turing, SPDT) be the optimal processing method of KDP crystal, but single-point diamond turning not only can produce obvious knife mark and Microscale waveness at finished surface, and produce such as surface and sub-surface damages such as brittle crushes on KDP surface, reduce the laser damage threshold of KDP crystal.In addition, because the anisotropy of KDP plane of crystal hardness causes cutting surface quality and face shape error to present anisotropy, be difficult to the surface figure accuracy that reaches higher.
The J. A. Menapace in U.S. LLNL laboratory and the Peng Xiaoqiang of the National University of Defense technology etc. adopt MRF (Magnetorheological Finishing, MRF) technique has been removed turning knife mark, Microscale waveness and the brittle crush of KDP plane of crystal effectively, and has reduced the impact of anisotropy on surface figure accuracy by variable residence time.Technique of Magnetorheological Finishing utilizes the rheological characteristic of Magnetorheologicai polishing liquid in magnetic field that optical element is polished, Magnetorheologicai polishing liquid arrives the polishing wheel outer surface through nozzle ejection, the polishing wheel rotation is brought liquid into polishing area, under high-intensity Actions of Gradient Magnetic Field, Magnetorheologicai polishing liquid in this zone becomes and has viscoplastic Bingham medium, hardness, viscosity become large, formation has definite shape " flexible polishing mould ", after leaving the magnetic fields of machining area, Magnetorheologicai polishing liquid reverts to and again enters circulation after liquid condition is recycled by recovery system.Wherein, iron powder is the basis of realizing the magnetorheological polishing solution rheology energy.Also Just because of this, MRF is difficult to avoid the impurity such as iron powder in the magnetic rheological liquid to embed the soft KDP plane of crystal of matter, and the iron powder of embedding will strengthen the absorption to laser, reduce the laser damage threshold of KDP crystal.Therefore, how removing the iron powder that MRF embeds the KDP plane of crystal is the major issue that the ultraprecise machining faces.
Because KDP crystal quality is very soft, stays irregular cut at plane of crystal easily with the lens wiping paper wiping, thereby has reduced surface quality.In Ultrasonic Cleaning, the edge of work has small KDP particle detachment, and the KDP particle that comes off is under the effect of cavitation bubble, and striking work is surperficial, thus the heavy damage finished surface.The cleaning method of existing KDP plane of crystal is all to be improved.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, provide a kind of simple, low for equipment requirements, can reduce optical surface element surface roughness, remove the optical element surface cleaning method based on ion beam polishing of optical element surface impurity.
For solving the problems of the technologies described above, the technical scheme that the present invention proposes is a kind of optical element surface cleaning method based on ion beam polishing, may further comprise the steps: with through the optical element behind single-point diamond turning or the MRF as processing object, employing is based on method for polishing ion beam (the Ion Beam Figuring of low energy ion sputter principle, IBF) surface of this processing object processed, in process, the control ion beam carries out even sweeping to optical element surface, finishes the cleaning to optical element surface after the process finishing.This technical scheme proposes to utilize the method for polishing ion beam based on low energy ion sputter principle that optical element surface is cleaned.Described ion beam polishing based on low energy ion sputter principle refers to adopt the ion beam bombardment optical element of ion gun emission, the energy of ion passes to the surface of the work atom, when the energy of surface of the work atom acquisition is enough to break away from the dissimulated electricity energy, will break away from surface of the work, thereby realize the material removal.Described even ion beam sweeping refers to that ion beam (adopts the sweep speed scope preferably to be controlled at the finished surface of the whole optical element of sweeping of 2mm/s～20mm/s) with uniform speed, so that optical element surface is evenly removed certain depth, thereby guarantee not destroy the high-precision surface shape that single-point diamond turning or MRF process obtain, do not destroy the surface quality of KDP crystal.
The above-mentioned optical element surface cleaning method based on ion beam polishing, described optical element is specially adapted to KH
2PO
4Optical crystal material (KDP crystal).Through the KDP crystal after the single-point diamond turning, adopt again cleaning method processing of the present invention can reduce the roughness value of optical surface, surface roughness is improved.Embed easily iron powder through the KDP plane of crystal behind the MRF, adopt again cleaning method processing of the present invention can realize that the KDP plane of crystal embeds the removal of iron powder.Described KDP plane of crystal needs sputter to remove certain thickness, and this thickness is to realize that the KDP plane of crystal embeds iron powder and removes the required ion beam sputtering degree of depth.Iron powder in the magnetorheological throwing liquid embeds the KDP plane of crystal and has certain degree of depth, and the material thickness that ion beam sputtering is removed generally must be greater than the insert depth of iron powder.In addition, adopt method for polishing ion beam of the present invention to process the structure that cleaning can not change the KDP crystal, namely pass through our repeatedly test, ion beam polishing of the present invention can not make the chemical composition of KDP crystal and crystal composition structure change, the surface does not have novel substance and generates, otherwise the change of crystal structure will affect the optical property of original crystal.
The above-mentioned optical element surface cleaning method based on ion beam polishing, the optimal process parameter of described method for polishing ion beam is: incident ionic energy is 300eV～500eV, ion beam current 20mA～50mA, ion beam incident angle are 0 °～60 °.
In the above-mentioned optical element surface cleaning method based on ion beam polishing, described ion beam is relevant with the MRF technological parameter to the removal thickness of optical element surface, in conjunction with above-mentioned preferred technological parameter, described ion beam is being no more than 200nm to the removal THICKNESS CONTROL of optical element surface.
Compared with prior art, the invention has the advantages that: simple, the easy row of cleaning method of the present invention, low for equipment requirements, not only can effectively reduce the roughness value of optical surface element surface, and can effectively remove the impurity such as iron powder that optical element surface embeds, guarantee the crudy of optical element.
Description of drawings
Fig. 1 is the photo of low energy ion beam polishing KDP crystal in the embodiment of the invention 1.
Fig. 2 is the KDP plane of crystal of exemplar 2 in the embodiment of the invention 1 roughness measurement result after single-point diamond turning, before the ion beam polishing.
Fig. 3 is the roughness measurement result of KDP plane of crystal after process ion beam polishing of exemplar 2 in the embodiment of the invention 1.
Fig. 4 is the Raman spectrum analysis result of KDP plane of crystal before and after the polishing of the embodiment of the invention 1 intermediate ion bundle.
Fig. 5 is the KDP plane of crystal SIMS analysis result of exemplar 3 in the embodiment of the invention 2.
Fig. 6 is the KDP crystal initial surface SIMS analysis result of exemplar 4 in the embodiment of the invention 2.
Fig. 7 is the surface second ion mass spectrometry result after 60nm is removed in the KDP crystal sputter of exemplar 4 in the embodiment of the invention 2.
Fig. 8 is the KDP plane of crystal SIMS analysis result of exemplar 5 in the embodiment of the invention 2.
Fig. 9 is that relative atomic weight is that 56 atom or atomic group secondary ion quantity are with the distribution schematic diagram of sputter depth in the embodiment of the invention 2.
The specific embodiment
The invention will be further described with concrete preferred embodiment below in conjunction with Figure of description, but protection domain not thereby limiting the invention.
Embodiment 1:
A kind of optical element surface cleaning method based on ion beam polishing of the present invention may further comprise the steps: at first utilize single-point diamond turning that size is 50 * 50 * 10 mm
3II class KDP crystal exemplar 1 and exemplar 2 carry out turning processing, the main technologic parameters of single-point diamond turning is controlled to be: the speed of mainshaft 500 r/min, the amount of feeding 2 μ m/r, cutting depth 1 μ m; Again with through the exemplar 2 of single-point diamond turning as processing object (exemplar 1 in contrast), employing is processed based on the method for polishing ion beam of the low energy ion sputter principle surface to this processing object, in process, the control ion beam carries out even sweeping to optical element surface, the main technologic parameters of ion beam polishing processing is controlled to be: incident ionic energy 400 eV, ion beam current 30 mA, 45 ° of ion beam incident angles (adding the image in man-hour as shown in Figure 1); This ion beam at 200nm, is finished the cleaning to optical element surface to the removal THICKNESS CONTROL of optical element surface after the process finishing.
Adopt white light interferometer that exemplar 2 surface roughnesses are measured, exemplar 2 is distinguished as shown in Figures 2 and 3 in the forward and backward surface finish measurement result of ion beam polishing, by Fig. 2 and Fig. 3 as seen, the surface roughness of exemplar 2 is 1.506 nm rms after the single-point diamond turning, and the surface roughness of exemplar 2 is 1.258 nm rms after the ion beam polishing.Can find out that after the ion beam polishing processing of present embodiment, the roughness value of KDP plane of crystal decreases, surface roughness improves.Utilize afterwards the infrared Raman microspectrograph of Fourier that the finished surface of exemplar 1 and exemplar 2 is carried out spectrum analysis and the result is compared, the Raman spectrum analysis result contrast of exemplar 1 and exemplar 2 as shown in Figure 4.As can be seen from Figure 4, the KDP plane of crystal behind the low-energy ion beams bombardment is except existing K
2HPO
4In addition, do not have other materials to exist, the KDP crystal is not novel substance generation under the low-energy ion beams bombardment effect.Therefore, the low energy ion beam polishing can not change the surface texture of KDP crystal, and the surface roughness of KDP crystal is had some improvement, and can be used for the ultraprecise processing of KDP crystal.
Embodiment 2:
A kind of optical element surface cleaning method based on ion beam polishing of the present invention may further comprise the steps:
For ease of ion microprobe exemplar is analyzed and contrasted, present embodiment selects three sizes to be 8 * 8 * 2 mm
3II class KDP crystal; Wherein, exemplar 3 carries out single-point diamond turning; Exemplar 4 carries out MRF after single-point diamond turning; Exemplar 5 carries out ion beam polishing (exemplar 3 and exemplar 4 are in contrast) after single-point diamond turning and MRF;
Wherein, the process parameter control of each exemplar single-point diamond turning is: the speed of mainshaft 500 r/min, the amount of feeding 2 μ m/r, cutting depth 1 μ m;
The main technologic parameters that the MRF of exemplar 4 and exemplar 5 adopts is controlled to be: polishing wheel rotating speed 150 r/min, field supply intensity 5 A, magnetorheological night flow 40 L/min, the KDP plane of crystal is pressed into the ribbon degree of depth 0.2 mm;
The ion beam polishing main technologic parameters of exemplar 5 is controlled to be: incident ionic energy 400 eV, ion beam current 30 mA, 45 ° of ion beam incident angles; In process, the control ion beam carries out even sweeping to the KDP plane of crystal, this ion beam to the removal THICKNESS CONTROL of KDP plane of crystal at 100 nm.
Subsequently, utilize the time of flight secondary ion massspectrometry instrument that the finished surface of above-mentioned exemplar 3, exemplar 4 and exemplar 5 is carried out the surface-element analysis; The used analysis condition of ion microprobe is: ion gun is the gallium source, and ion beam energy is 25 keV, analyst coverage 10 * 10 μ m
2, using the charging neutralization, rear accelerating potential is 5 kV.
Figure 5 shows that the ion microprobe analysis result of exemplar 3 finished surfaces.Abscissa represents relative atomic weight, and ordinate represents the atom or the atomic group quantity that sputter.As can be seen from Figure 5, mass spectral analysis ion beam sputtering goes out all polyatoms or atomic group, and for example, what relative atomic weight 54.96 places were corresponding is the KO atomic group, and what relative atomic weight 55.97 places were corresponding is KOH atomic group etc.
Figure 6 shows that the ion microprobe analysis result of exemplar 4 finished surfaces.Contrast the KDP surface second mass spectrometry results after the single-point diamond turning shown in Figure 5, find in the KDP plane of crystal mass spectrometry results behind the MRF at the new peak value of 55.93 places appearance, and the element of atomic weight 55.93 correspondences is Fe, and the KDP plane of crystal had iron powder to embed after this showed MRF.
Fig. 9 is that relative atomic weight is 56 atom or atomic group relative populations along with SIMS is analyzed the change curve of sputter depth, and wherein sputter depth is measured by AFM.As can be seen from Figure 9, the relative atomic weight that detects of exemplar 4 surfaces is this atom or the atomic group relative populations that 56 atom or atomic group relative populations obviously detect greater than exemplar 3 surfaces.This mainly is because the relative atomic weight that detects of exemplar 3 surfaces is 56 atomic group is KOH, and the Fe atom is also contained in exemplar 4 surfaces except comprising KOH.In addition, as seen from Figure 7, when the SIMS analysis sputter depth on exemplar 4 surfaces reaches 60 nm, the relative atomic weight that detects is that 56 atom or atomic group relative populations and exemplar 3 initial surfaces this atom or the atomic group relative populations that detect are substantially suitable, be that the peak value at 55.93 places disappears substantially in relative atomic weight, there has not been Fe in this expression in the exemplar 4 surperficial surveyed areas this moment.Therefore, can think in the present embodiment that the insert depth of iron powder is about 60 nm.
Figure 8 shows that the ion microprobe analysis result of exemplar 5 finished surfaces.As can be seen from Figure 8, after 100nm was removed in ion beam polishing, the peak value at relative atomic weight 55.93 places disappeared substantially.Simultaneously, the analysis result of Fig. 9 shows, after the ion beam polishing, the KDP surface relative atomic weight that ion microprobe detects is that the relative populations of 56 atom or atomic group is suitable with the surperficial testing result of the KDP after the single-point diamond turning.After this explanation was removed 100 nm through ion beam polishing, the iron powder of the embedding on KDP surface was removed substantially.
Analyze contrast by the KDP surface composition after utilizing SIMS to MRF and ion beam polishing, we can find, because MRF can be removed by cleaning method of the present invention well at the iron powder that the KDP plane of crystal embeds.
Claims (5)
1. optical element surface cleaning method based on ion beam polishing, may further comprise the steps: with through the optical element behind single-point diamond turning or the MRF as processing object, employing is processed based on the method for polishing ion beam of the low energy ion sputter principle surface to this processing object, in process, the control ion beam carries out even sweeping to optical element surface, finishes the cleaning to optical element surface after the process finishing.
2. the optical element surface cleaning method based on ion beam polishing according to claim 1, it is characterized in that: described optical element is KH
2PO
4Optical crystal material.
3. the optical element surface cleaning method based on ion beam polishing according to claim 1 and 2, it is characterized in that, the technological parameter of described method for polishing ion beam is: incident ionic energy is 300eV～500eV, and ion beam current 20mA～50mA, ion beam incident angle are 0 °～60 °.
4. the optical element surface cleaning method based on ion beam polishing according to claim 1 and 2 is characterized in that, described ion beam is being no more than 200nm to the removal THICKNESS CONTROL of optical element surface.
5. the optical element surface cleaning method based on ion beam polishing according to claim 1 and 2 is characterized in that the sweep speed during described even sweeping is controlled at 2mm/s～20mm/s.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103771729A (en) * | 2014-01-22 | 2014-05-07 | 中国人民解放军国防科学技术大学 | Ion beam processing method capable of reducing travel |
| CN104084849A (en) * | 2014-06-25 | 2014-10-08 | 中国人民解放军国防科学技术大学 | Magneto-rheological finishing method of easy-deliquescence crystals |
| CN104923463A (en) * | 2015-05-21 | 2015-09-23 | 西安工业大学 | Potassium dihydrogen phosphate (KDP) optical surface planarization method |
| CN105252375A (en) * | 2015-10-14 | 2016-01-20 | 中国人民解放军国防科学技术大学 | Method for increasing laser-damaged threshold through ion beam elastic domain etching |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4049944A (en) * | 1973-02-28 | 1977-09-20 | Hughes Aircraft Company | Process for fabricating small geometry semiconductive devices including integrated components |
| US5529671A (en) * | 1994-07-27 | 1996-06-25 | Litton Systems, Inc. | Apparatus and method for ion beam polishing and for in-situ ellipsometric deposition of ion beam films |
| US6217422B1 (en) * | 1999-01-20 | 2001-04-17 | International Business Machines Corporation | Light energy cleaning of polishing pads |
| CN1983504A (en) * | 2005-12-14 | 2007-06-20 | 鸿富锦精密工业（深圳）有限公司 | Ion source and mould polisher therewith |
| CN201055959Y (en) * | 2007-06-05 | 2008-05-07 | 东莞市志兴电子五金有限公司 | Electric slurry polishing equipment |
| CN101274822A (en) * | 2008-03-31 | 2008-10-01 | 中国人民解放军国防科学技术大学 | Planning method for ion beam polishing path |
| CN101559627A (en) * | 2009-05-25 | 2009-10-21 | 天津大学 | Particle beam assisted single-crystal fragile material ultraprecise processing method |
| CN101898324A (en) * | 2010-07-28 | 2010-12-01 | 中国人民解放军国防科学技术大学 | Method for polishing ion beam with high-gradient mirror surface |
| CN102642156A (en) * | 2012-05-04 | 2012-08-22 | 中国人民解放军国防科学技术大学 | Optical mirror ion beam nano-precision machining method based on combination of material addition and removal |
| CN102744655A (en) * | 2012-07-30 | 2012-10-24 | 中国人民解放军国防科学技术大学 | Large-scale ion beam polisher for optical parts |
-
2012
- 2012-12-19 CN CN201210553986.6A patent/CN102990480B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4049944A (en) * | 1973-02-28 | 1977-09-20 | Hughes Aircraft Company | Process for fabricating small geometry semiconductive devices including integrated components |
| US5529671A (en) * | 1994-07-27 | 1996-06-25 | Litton Systems, Inc. | Apparatus and method for ion beam polishing and for in-situ ellipsometric deposition of ion beam films |
| US6217422B1 (en) * | 1999-01-20 | 2001-04-17 | International Business Machines Corporation | Light energy cleaning of polishing pads |
| CN1983504A (en) * | 2005-12-14 | 2007-06-20 | 鸿富锦精密工业（深圳）有限公司 | Ion source and mould polisher therewith |
| CN201055959Y (en) * | 2007-06-05 | 2008-05-07 | 东莞市志兴电子五金有限公司 | Electric slurry polishing equipment |
| CN101274822A (en) * | 2008-03-31 | 2008-10-01 | 中国人民解放军国防科学技术大学 | Planning method for ion beam polishing path |
| CN101559627A (en) * | 2009-05-25 | 2009-10-21 | 天津大学 | Particle beam assisted single-crystal fragile material ultraprecise processing method |
| CN101898324A (en) * | 2010-07-28 | 2010-12-01 | 中国人民解放军国防科学技术大学 | Method for polishing ion beam with high-gradient mirror surface |
| CN102642156A (en) * | 2012-05-04 | 2012-08-22 | 中国人民解放军国防科学技术大学 | Optical mirror ion beam nano-precision machining method based on combination of material addition and removal |
| CN102744655A (en) * | 2012-07-30 | 2012-10-24 | 中国人民解放军国防科学技术大学 | Large-scale ion beam polisher for optical parts |
Non-Patent Citations (1)
| Title |
|---|
| 郑开陵: "粒子束抛光技术", 《现代兵器》 * |
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| CN103771729A (en) * | 2014-01-22 | 2014-05-07 | 中国人民解放军国防科学技术大学 | Ion beam processing method capable of reducing travel |
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| CN104084849A (en) * | 2014-06-25 | 2014-10-08 | 中国人民解放军国防科学技术大学 | Magneto-rheological finishing method of easy-deliquescence crystals |
| CN104084849B (en) * | 2014-06-25 | 2016-06-15 | 中国人民解放军国防科学技术大学 | The magnetic rheological polishing method of deliquescent crystal |
| CN104923463A (en) * | 2015-05-21 | 2015-09-23 | 西安工业大学 | Potassium dihydrogen phosphate (KDP) optical surface planarization method |
| CN105252375A (en) * | 2015-10-14 | 2016-01-20 | 中国人民解放军国防科学技术大学 | Method for increasing laser-damaged threshold through ion beam elastic domain etching |
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| CN106835035A (en) * | 2017-04-21 | 2017-06-13 | 西安工业大学 | A kind of method of potassium dihydrogen phosphate crystalloid optical surface planarization |
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| CN110136215A (en) * | 2019-05-22 | 2019-08-16 | 中国工程物理研究院机械制造工艺研究所 | A kind of Magnetorheological Polishing spot extracting method |
| CN110253220A (en) * | 2019-06-19 | 2019-09-20 | 中国科学院长春光学精密机械与物理研究所 | A kind of method of diamond single-point vehicle assistant ion beam polishing metal mirror |
| CN110712094A (en) * | 2019-09-06 | 2020-01-21 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
| CN110712094B (en) * | 2019-09-06 | 2021-07-23 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
| CN112171205A (en) * | 2020-09-28 | 2021-01-05 | 中国人民解放军国防科技大学 | Ion beam assisted aluminum alloy reflector processing method |
| CN112171205B (en) * | 2020-09-28 | 2022-01-11 | 湖南天创精工科技有限公司 | Ion beam assisted aluminum alloy reflector processing method |
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