CN102983288A - Blue-green organic electroluminescent device and manufacturing method thereof - Google Patents
Blue-green organic electroluminescent device and manufacturing method thereof Download PDFInfo
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- CN102983288A CN102983288A CN2012105529031A CN201210552903A CN102983288A CN 102983288 A CN102983288 A CN 102983288A CN 2012105529031 A CN2012105529031 A CN 2012105529031A CN 201210552903 A CN201210552903 A CN 201210552903A CN 102983288 A CN102983288 A CN 102983288A
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Abstract
The invention provides a blue-green organic electroluminescent device which takes di (4,6-difluoro phenyl pyridine-N,C2) pyridine formyl iridium as a blue-green organic luminescent material, the luminescent material has high luminescent efficiency and superior electronic transmission capacity, a scope of a luminescent interval is restricted and balanced distribution of electrons and holes in a recombination region is ensured by optimizing doping concentrations of the luminescent material in a hole dominant luminescent layer and an electron dominant luminescent layer respectively, and decreasing of the efficiency of the device is slowed down, so that the device achieves high-brightness blue-green electroluminescence under lower working voltage, that is the luminescent efficiency, the brightness and the thermostability of the device are improved while the working voltage of the blue-green organic electroluminescent device is reduced.
Description
Technical field
The present invention relates to technical field of organic electroluminescence, relate in particular to a kind of blue-green organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device is a kind of selfluminous element, when electric charge is injected into organic film between hole injecting electrode (anode) and the electron injection electrode (negative electrode), electronics and hole in conjunction with and bury in oblivion subsequently, thereby produce light.Organic electroluminescence device has the characteristics such as low-voltage, high brightness, wide visual angle, therefore organic electroluminescence device has obtained swift and violent development in recent years, wherein, the blue-green organic electroluminescence device has become present study hotspot owing to the application prospect at aspects such as monochrome demonstration, white light modulation.
All the time, many research teams both domestic and external set about with the device optimization aspect from material is synthetic, make great efforts to improve the combination property of blue-green organic electroluminescence device in the hope of satisfying the needs of industrialization, the trivalent complex of iridium is considered as desirable blue-green electroluminescent organic material because having the advantages such as the high and glow color of luminous efficiency is adjustable by academia and industrial circle, for example, the people such as S.R.Forrest of Princeton university in 2003 adopt can launch the complex of iridium FIrpic of bluish-green coloured light as electroluminescent organic material, make organic electroluminescence device by the method for mixing, this device shows that ideal blue-green is luminous, but, unbalanced carrier injection causes the efficient of device and brightness lower, in addition, the operating voltage of device is also higher.
In order to address these problems, 2008, the people such as Franky So of U.S. good fortune Flo-Rida-Low university were by mixing high efficiency complex of iridium the blue-green organic electroluminescence device that has made sandwich construction in the preferred material of main part.This device has higher maximum luminous efficiency, yet the current density of device is lower, and luminous efficiency promptly decays along with the raising of current density, thereby causes the brightness lower operating voltage of device higher.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is to provide a kind of blue-green organic electroluminescence device and preparation method thereof, blue-green organic electroluminescence device provided by the invention has improved luminous efficiency, brightness and the thermal stability of device when having reduced the device operating voltage.
The invention provides a kind of blue-green organic electroluminescence device, comprising:
Substrate;
At described substrate anode layer is arranged;
There is the hole to dominate luminescent layer at described anode layer, the leading luminescent layer in described hole is entrained in the cavity type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described cavity type organic main body material is 6.0% ~ 16.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Leading luminescent layer has electronics to dominate luminescent layer in described hole, the leading luminescent layer of described electronics is entrained in the electron type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described electron type organic main body material is 13.0% ~ 22.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
At the leading luminescent layer of described electronics negative electrode is arranged.
Preferably, described cavity type organic main body material is two (the N-carbazoles)-1 of 4,4'-, 1'-biphenyl, 1,3-two carbazoles-9-base benzene, 9,9'-(5-(tri-phenyl-silane base)-1,3-phenyl) two-9H-carbazole, 1,3,5-three (9-carbazyl) benzene, 4,4', 4 " three (carbazole-9-yl) triphenylamines or Isosorbide-5-Nitrae-two (tri-phenyl-silane base) biphenyl.
Preferably, the thickness of the leading luminescent layer in described hole is 3 ~ 10 nanometers.
Preferably, described electron type organic main body material is 9,9'-(2,6-pyridine two bases two-3, the inferior benzene of 1-) two-9H-carbazole, 1, two (tri-phenyl-silane base) benzene, 2 of 4-, 2 '-two (4-(9-carbazyl) phenyl) biphenyl, three [2,4,6-trimethyl-3-(3-pyridine radicals) phenyl] borine, 1,3,5-three [(3-pyridine)-3-phenyl] benzene, 1, two [3,5-two (3-pyridine radicals) phenyl] benzene or the 9-(4-t-butyl-phenyl)-3 of 3-, two (triphenyl the is silica-based)-9H-carbazoles of 6-.
Preferably, the thickness of the leading luminescent layer of described electronics is 3 ~ 10 nanometers.
Preferably, also comprise hole transmission layer between the leading luminescent layer in described anode layer and hole;
Described hole transmission layer is formed by 4,4'-cyclohexyl two [N, N-two (4-aminomethyl phenyl) aniline].
Preferably, also comprise hole blocking layer between the leading luminescent layer of described electronics and the negative electrode;
Described hole blocking layer is by three [2,4,6-trimethyl-3-(3-pyridine radicals) phenyl] borine, 1,3, and two [3,5-two (3-pyridine radicals) phenyl] benzene of 5-three [(3-pyridine)-3-phenyl] benzene or 1,3-form.
Preferably, also comprise resilient coating between described hole blocking layer and the negative electrode;
Described resilient coating is formed by lithium fluoride.
The present invention also provides a kind of preparation method of blue-green organic electroluminescence device, comprising:
Form anode layer at substrate;
Form the leading luminescent layer in hole at described anode layer, the leading luminescent layer in described hole is entrained in the cavity type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described cavity type organic main body material is 6.0% ~ 16.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Leading luminescent layer forms the leading luminescent layer of electronics in described hole, the leading luminescent layer of described electronics is entrained in the electron type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described electron type organic main body material is 13.0% ~ 22.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Form negative electrode at the leading luminescent layer of described electronics, obtain the blue-green organic electroluminescence device.
Preferably, the thickness of the leading luminescent layer in described hole is 3 ~ 10 nanometers;
The thickness of the leading luminescent layer of described electronics is 3 ~ 10 nanometers.
Compared with prior art, the present invention is with two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium as the blue-green luminous organic material, described luminescent material has high-luminous-efficiency and superior electron transport ability concurrently, by optimizing respectively the doping content of described luminescent material in the leading luminescent layer in hole and the leading luminescent layer of electronics, the mass percent that namely accounts for cavity type organic main body material at luminescent material described in the leading luminescent layer in hole is 6.0% ~ 16.0%, the mass percent that accounts for described electron type organic main body material at luminescent material described in the leading luminescent layer of electronics is 13.0% ~ 22.0%, thereby limited the scope between the luminous zone and guaranteed electronics and the hole in the balanced distribution of recombination region, delayed the efficient decay of device, and then so that device has obtained the blue-green electroluminescence of high brightness under lower operating voltage, experimental result shows, a bright voltage of blue-green organic electroluminescence device provided by the invention is 2.8 ~ 3.0 volts, and high-high brightness is 33932 ~ 48325cd/m
2, maximum current efficient is 48.76 ~ 54.27cd/A, maximum power efficiency is 49.11 ~ 56.59lm/W.
Description of drawings
The structural representation of the blue-green organic electroluminescence device that Fig. 1 provides for the embodiment of the invention;
Current density-the voltage of the blue-green organic electroluminescence device that Fig. 2 provides for the embodiment of the invention 1-luminosity response figure;
Current density-the power efficiency of the blue-green organic electroluminescence device that Fig. 3 provides for the embodiment of the invention 1-current efficiency performance diagram;
The electroluminescent spectrum figure of the blue-green organic electroluminescence device that Fig. 4 provides for the embodiment of the invention 1;
Current density-the voltage of the blue-green organic electroluminescence device that Fig. 5 provides for the embodiment of the invention 2-luminosity response figure;
Current density-the power efficiency of the blue-green organic electroluminescence device that Fig. 6 provides for the embodiment of the invention 2-current efficiency performance diagram.
Embodiment
The invention provides a kind of blue-green organic electroluminescence device, comprising:
Substrate;
At described substrate anode layer is arranged;
There is the hole to dominate luminescent layer at described anode layer, the leading luminescent layer in described hole is entrained in the cavity type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described cavity type organic main body material is 6.0% ~ 16.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Leading luminescent layer has electronics to dominate luminescent layer in described hole, the leading luminescent layer of described electronics is entrained in the electron type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described electron type organic main body material is 13.0% ~ 22.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
At the leading luminescent layer of described electronics negative electrode is arranged.
The present invention does not have specific (special) requirements to described substrate, can for glass or plastics, be preferably glass.According to the present invention, described anode layer is formed by the material that is easy to inject in the hole, be preferably conducting metal or conducting metal oxide, include but not limited to nickel, platinum, gold, indium tin oxide (ITO) and indium-zinc oxide (IZO), indium tin oxide more preferably, the face resistance of described indium tin oxide is 10 ~ 15 ohm; In the present invention, the conducting metal on the substrate or conducting metal oxide corrosion are obtained electrode, the present invention does not have specific (special) requirements to shape and the size of the electrode of corrosion, as corroding into the strip shaped electric poles of 10 mm wides, 30 millimeters long.
According to the present invention, the leading luminescent layer in described hole is entrained in the cavity type organic main body material by the blue-green luminous organic material and forms, and the thickness of the leading luminescent layer in described hole is preferably 3 ~ 10 nanometers, more preferably 5 ~ 8 nanometers; The mass percent that described blue-green luminous organic material accounts for described cavity type organic main body material is 6.0% ~ 16.0%, is preferably 7.0% ~ 14.0%, more preferably 8.0% ~ 11.0%; Described blue-green luminous organic material closes iridium (being called for short FIrpic) for two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyls with formula (I) structure, and described FIrpic has high luminous efficiency and superior electron transport ability,
Described cavity type organic main body material is preferably 4 of formula (II) structure, two (the N-carbazoles)-1 of 4'-, 1'-biphenyl (being called for short CBP), 1 of formula (III) structure, 3-two carbazoles-9-base benzene (being called for short MCP), 9 of formula (IV) structure, 9'-(5-(tri-phenyl-silane base)-1, the 3-phenyl) two-9H-carbazole (being called for short Simcp), 1 of formula (V) structure, 3,5-three (9-carbazyl) benzene (being called for short TCP), 4 of formula (VI) structure, 4', 4 " 1 of three (carbazole-9-yl) fluorine-triphenylamine structure (be called for short TCTA) or formula (VII) structure; two (tri-phenyl-silane base) biphenyl of 4-(being called for short BSB), more preferably 1 of formula (III) structure, 1 of 3-two carbazoles-9-base benzene (being called for short MCP) or formula (V) structure; 3,5-three (9-carbazyl) benzene (being called for short TCP); Cavity type organic material of the present invention is conducive to be limited between the recombination region with hole and electronics the center of luminescent layer, thereby has improved the efficient of device with the material of main part of wide energy gap organic material as the leading luminescent layer in hole.
Formula (VI);
Formula (VII).
In order to improve the transmittability in hole, intercept simultaneously the transmission of electronics, and then reduce the energy consumption of device, improve the efficient of device, preferably also comprise hole transmission layer between the leading luminescent layer in described anode layer and hole, the thickness of described hole transmission layer is preferably 30 ~ 50 nanometers; The present invention does not have particular restriction to the material of hole transmission layer, is preferably by having 4 of formula (VIII) structure, and 4'-cyclohexyl two [N, N-two (4-aminomethyl phenyl) aniline] (being called for short TAPC) forms,
Formula (VIII).
According to the present invention, the leading luminescent layer of described electronics is entrained in the electron type organic main body material by the blue-green luminous organic material and forms, and the thickness of the leading luminescent layer of described electronics is 3 ~ 10 nanometers, more preferably 5 ~ 8 nanometers; The mass percent that described blue-green luminous organic material accounts for described electron type organic main body material is 13.0% ~ 22.0%, is preferably 15.0% ~ 21.0%, more preferably 17.0% ~ 20.0%; Described blue-green luminous organic material closes iridium (being called for short FIrpic) for two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyls with formula (I) structure, and described FIrpic has high luminous efficiency and superior electron transport ability.
Described electron type organic main body material is preferably 9 of formula (IX) structure, 9'-(2,6-pyridine two bases two-3, the inferior benzene of 1-) two-the 9H-carbazole (being called for short 26DCzPPy), 1 of formula (X) structure, two (tri-phenyl-silane base) benzene of 4-(being called for short UGH2), 2 of formula (XI) structure, 2 '-two (4-(9-carbazyl) phenyl) biphenyl (being called for short BCBP), three [2 of formula (XII) structure, 4,6-trimethyl-3-(3-pyridine radicals) phenyl] borine (being called for short 3TPYMB), 1 of formula (XIII) structure, 3,5-three [(3-pyridine)-3-phenyl] benzene (being called for short TmPyPB), 1 of formula (XIV) structure, 3-two [3,5-two (3-pyridine radicals) phenyl] 9-(4-t-butyl-phenyl)-3 of benzene (be called for short BmPyPhB) or formula (XV) structure, two (triphenyl the is silica-based)-9H-carbazoles of 6-(being called for short CzSi), more preferably 9 of formula (IX) structure, 9'-(2,6-pyridine two bases two-3, the inferior benzene of 1-) two-the 9H-carbazole (being called for short 26DCzPPy), 2 of formula (XI) structure, 2 '-two (4-(9-carbazyl) phenyl) biphenyl (being called for short BCBP), 1 of formula (XIII) structure, 3,1 of 5-three [(3-pyridine)-3-phenyl] benzene (being called for short TmPyPB) or formula (XIV), two [3,5-two (3-pyridine radicals) phenyl] benzene of 3-(being called for short BmPyPhB); Electron type organic material of the present invention is conducive to be limited between the recombination region with hole and electronics the center of luminescent layer, thereby has improved the efficient of device with the material of main part of wide energy gap organic material as the leading luminescent layer of electronics,
Formula (XI);
Formula (XII);
The present invention is applied to the leading luminescent layer in hole and the leading luminescent layer of electronics with wide energy gap organic material as described cavity type organic material and electron type organic material, be conducive to be limited between the recombination region with hole and electronics the center of luminescent layer, take full advantage of the exciton that electronics and hole-recombination produce, thereby obtain high charge carrier recombination probability and device efficiency.
According to the present invention, described negative electrode is preferably the metal of low work function, includes but not limited to calcium, barium, aluminium, magnesium and silver, more preferably metallic aluminium; The thickness of described negative electrode is 90 ~ 150 nanometers, is preferably 100 ~ 120 nanometers.
In order to improve the transmittability of electronics, intercept simultaneously the transmission in hole, and then reduce the energy consumption of device, improve the efficient of device, preferably also comprise hole blocking layer between the leading luminescent layer of described electronics and the negative electrode;
The thickness of described hole blocking layer is preferably 30 ~ 50 nanometers; Described hole blocking layer is preferably by three [2 of formula (XII) structure, 4,6-trimethyl-3-(3-pyridine radicals) phenyl] borine (being called for short 3TPYMB), 1 of formula (XIII) structure, 3,1 of 5-three [(3-pyridine)-3-phenyl] benzene (being called for short TmPyPB) or formula (XIV) structure, 3-two [3,5-two (3-pyridine radicals) phenyl] benzene (being called for short BmPyPhB) formation, more preferably 1 of formula (XIII) structure, 3,1 of 5-three [(3-pyridine)-3-phenyl] benzene (being called for short TmPyPB) or formula (XIV) structure, two [3,5-two (3-pyridine radicals) phenyl] benzene of 3-(being called for short BmPyPhB); The material of formation hole blocking layer of the present invention has lower highest occupied molecular orbital and higher triplet energies, the scope of activities of confinement exciton effectively in can be between the restriction luminous zone, thus guarantee that device has higher luminous efficiency and more slowly efficient decay.
In order to promote the injection efficiency of electronics, and then improve the efficient of device, preferably also comprise resilient coating between described hole blocking layer and the negative electrode; Described resilient coating is formed by lithium fluoride; Described buffer layer thickness is preferably 0.8 ~ 1.6 nanometer, more preferably 0.9 ~ 1.3 nanometer.
The luminous zone of device of the present invention is intersected to form mutually by anode and negative electrode, and the present invention does not have specific (special) requirements to the size of device, as being for the luminous zone area 8 ~ 12 square millimeters device.
Below in conjunction with accompanying drawing the blue-green organic electroluminescence device that the embodiment of the invention provides is described, referring to Fig. 1, the structural representation of the blue-green organic electroluminescence device that Fig. 1 provides for the embodiment of the invention, as seen from the figure, described organic electroluminescence device is connected to form successively by substrate 1, anode layer 2, hole transmission layer 3, the leading luminescent layer 4 in hole, the leading luminescent layer 5 of electronics, hole blocking layer 6, resilient coating 7 and negative electrode 8.
The present invention also provides a kind of preparation method of blue-green organic electroluminescence device, comprising:
Form anode layer at substrate;
Form the leading luminescent layer in hole at described anode layer, the leading luminescent layer in described hole is entrained in the cavity type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described cavity type organic main body material is 6.0% ~ 16.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Leading luminescent layer forms the leading luminescent layer of electronics in described hole, the leading luminescent layer of described electronics is entrained in the electron type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described electron type organic main body material is 13.0% ~ 22.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Form negative electrode at the leading luminescent layer of described electronics, obtain the blue-green organic electroluminescence device.
According to the present invention, at first form anode layer at substrate, the present invention does not have particular restriction to described formation method, is preferably method well known to those skilled in the art.The present invention does not have specific (special) requirements to described substrate, can for glass or plastics, be preferably glass.According to the present invention, described anode layer is formed by the material that is easy to inject in the hole, be preferably conducting metal or conducting metal oxide, include but not limited to nickel, platinum, gold, indium tin oxide (ITO) and indium-zinc oxide (IZO), indium tin oxide more preferably, the face resistance of described indium tin oxide is 10 ~ 15 ohm; In the present invention, the conducting metal on the substrate or conducting metal oxide corrosion are obtained electrode, the present invention does not have specific (special) requirements to shape and the size of the electrode of corrosion, as corroding into the strip shaped electric poles of 10 mm wides, 30 millimeters long.
According to the present invention, form the leading luminescent layer in hole at described anode layer, the present invention does not have particular restriction to described formation method, is preferably method well known to those skilled in the art, includes but not limited to the methods such as vacuum evaporation.According to the present invention, the leading luminescent layer in described hole is entrained in the cavity type organic main body material by the blue-green luminous organic material and forms, the evaporation rate of described blue-green luminous organic material is preferably 0.003 ~ 0.022 nm/sec, and the evaporation rate of described cavity type organic main body material is preferably 0.05 ~ 0.1 nm/sec; The thickness of the leading luminescent layer in described hole is preferably 3 ~ 10 nanometers, more preferably 5 ~ 8 nanometers;
The mass percent that described blue-green luminous organic material accounts for described cavity type organic main body material is 6.0% ~ 16.0%, is preferably 7.0% ~ 14.0%, more preferably 8.0% ~ 11.0%; Described blue-green luminous organic material closes iridium (being called for short FIrpic) for two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyls with formula (I) structure, and described FIrpic has high luminous efficiency and superior electron transport ability,
Described cavity type organic main body material is preferably 4 of formula (II) structure, two (the N-carbazoles)-1 of 4'-, 1'-biphenyl (being called for short CBP), 1 of formula (III) structure, 3-two carbazoles-9-base benzene (being called for short MCP), 9 of formula (IV) structure, 9'-(5-(tri-phenyl-silane base)-1, the 3-phenyl) two-9H-carbazole (being called for short Simcp), 1 of formula (V) structure, 3,5-three (9-carbazyl) benzene (being called for short TCP), 4 of formula (VI) structure, 4', 4 " 1 of three (carbazole-9-yl) fluorine-triphenylamine structure (be called for short TCTA) or formula (VII) structure; two (tri-phenyl-silane base) biphenyl of 4-(being called for short BSB); more preferably 1 of formula (III) structure; 1 of 3-two carbazoles-9-base benzene (being called for short MCP) or formula (V) structure; 3; 5-three (9-carbazyl) benzene (being called for short TCP), cavity type organic material of the present invention is with the material of main part of wide energy gap organic material as the leading luminescent layer in hole, be conducive to be limited between the recombination region with hole and electronics the center of luminescent layer, thereby improved the efficient of device.
Formula (IV);
Formula (V);
According to the present invention, before forming luminescent layer, the preferred substrate with first electrode that cleans, and the substrate after cleaning is carried out ultraviolet ray, ozone or low-voltage plasma process.
In order to improve the transmittability in hole, intercept simultaneously the transmission of electronics, and then reduce the energy consumption of device, improve the efficient of device, before forming the leading luminescent layer in hole, preferably form hole transmission layer at described anode layer, invention does not have particular restriction to described formation method, is preferably method well known to those skilled in the art, includes but not limited to the methods such as vacuum evaporation.The thickness of described hole transmission layer is preferably 30 ~ 50 nanometers; The present invention does not have particular restriction to the material of hole transmission layer, is preferably by having 4 of formula (VIII) structure, and 4'-cyclohexyl two [N, N-two (4-aminomethyl phenyl) aniline] (being called for short TAPC) forms,
Formula (VIII).
According to the present invention, leading luminescent layer forms the leading luminescent layer of electronics in described hole, and the present invention does not have particular restriction to described formation method, is preferably method well known to those skilled in the art, includes but not limited to the methods such as vacuum evaporation.According to the present invention, the leading luminescent layer of described electronics is entrained in the electron type organic main body material by the blue-green luminous organic material and forms, and the thickness of the leading luminescent layer of described electronics is 3 ~ 10 nanometers, more preferably 5 ~ 8 nanometers; The mass percent that described blue-green luminous organic material accounts for described electron type organic main body material is 13.0% ~ 22.0%, is preferably 15.0% ~ 21.0%, more preferably 17.0% ~ 20.0%; Described blue-green luminous organic material closes iridium (being called for short FIrpic) for two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyls with formula (I) structure, and described FIrpic has high luminous efficiency and superior electron transport ability.
Described electron type organic main body material is preferably 9 of formula (IX) structure, 9'-(2,6-pyridine two bases two-3, the inferior benzene of 1-) two-the 9H-carbazole (being called for short 26DCzPPy), 1 of formula (X) structure, two (tri-phenyl-silane base) benzene of 4-(being called for short UGH2), 2 of formula (XI) structure, 2 '-two (4-(9-carbazyl) phenyl) biphenyl (being called for short BCBP), three [2 of formula (XII) structure, 4,6-trimethyl-3-(3-pyridine radicals) phenyl] borine (being called for short 3TPYMB), 1 of formula (XIII) structure, 3,5-three [(3-pyridine)-3-phenyl] benzene (being called for short TmPyPB), 1 of formula (XIV) structure, 3-two [3,5-two (3-pyridine radicals) phenyl] 9-(4-t-butyl-phenyl)-3 of benzene (be called for short BmPyPhB) or formula (XV) structure, two (triphenyl the is silica-based)-9H-carbazoles of 6-(being called for short CzSi), more preferably 9 of formula (IX) structure, 9'-(2,6-pyridine two bases two-3, the inferior benzene of 1-) two-the 9H-carbazole (being called for short 26DCzPPy), 2 of formula (XI) structure, 2 '-two (4-(9-carbazyl) phenyl) biphenyl (being called for short BCBP), 1 of formula (XIII) structure, 3,1 of 5-three [(3-pyridine)-3-phenyl] benzene (being called for short TmPyPB) or formula (XIV), 3-two [3,5-two (3-pyridine radicals) phenyl] benzene (being called for short BmPyPhB), electron type organic material of the present invention is with the material of main part of wide energy gap organic material as the leading luminescent layer of electronics, be conducive to be limited between the recombination region with hole and electronics the center of luminescent layer, thereby improved the efficient of device
Formula (XV).
The present invention is applied to the leading luminescent layer in hole and the leading luminescent layer of electronics with wide energy gap organic material as described cavity type organic material and electron type organic material, be conducive to be limited between the recombination region with hole and electronics the center of luminescent layer, take full advantage of the exciton that electronics and hole-recombination produce, thereby obtain high charge carrier recombination probability and device efficiency.
According to the present invention, form negative electrode at the leading luminescent layer of described electronics, the present invention does not have particular restriction to described formation method, is preferably method well known to those skilled in the art, includes but not limited to the methods such as vacuum evaporation.Described negative electrode is preferably the metal of low work function, includes but not limited to calcium, barium, aluminium, magnesium and silver, more preferably metallic aluminium; The thickness of described negative electrode is 90 ~ 150 nanometers, is preferably 100 ~ 120 nanometers.
In order to improve the transmittability of electronics, intercept simultaneously the transmission in hole, and then reduce the energy consumption of device, improve the efficient of device, before forming, described negative electrode preferably forms hole blocking layer at the leading luminescent layer of described electronics, the present invention does not have particular restriction to described formation method, is preferably method well known to those skilled in the art, includes but not limited to the methods such as vacuum evaporation.The thickness of hole blocking layer of the present invention is preferably 30 ~ 50 nanometers; Described hole blocking layer is preferably by three [2 of formula (XII) structure, 4,6-trimethyl-3-(3-pyridine radicals) phenyl] borine (being called for short 3TPYMB), 1 of formula (XIII) structure, 3,1 of 5-three [(3-pyridine)-3-phenyl] benzene (being called for short TmPyPB) or formula (XIV) structure, 3-two [3,5-two (3-pyridine radicals) phenyl] benzene (being called for short BmPyPhB) formation, more preferably 1 of formula (XIII) structure, 3,1 of 5-three [(3-pyridine)-3-phenyl] benzene (being called for short TmPyPB) or formula (XIV) structure, two [3,5-two (3-pyridine radicals) phenyl] benzene of 3-(being called for short BmPyPhB); The material of formation hole blocking layer of the present invention has lower highest occupied molecular orbital and higher triplet energies, the scope of activities of confinement exciton effectively in can be between the restriction luminous zone, thus guarantee that device has higher luminous efficiency and more slowly efficient decay.
In order to promote the injection efficiency of electronics, and then the efficient of raising device, before forming described negative electrode, preferably form resilient coating at described hole blocking layer, the present invention does not have particular restriction to described formation method, be preferably method well known to those skilled in the art, include but not limited to the methods such as vacuum evaporation.Described resilient coating is formed by lithium fluoride; Described buffer layer thickness is preferably 0.8 ~ 1.6 nanometer, more preferably 0.9 ~ 1.3 nanometer.
The preparation method of the organic electroluminescence device that the embodiment of the invention is provided below in conjunction with accompanying drawing is described, referring to Fig. 1, the structural representation of the blue-green organic electroluminescence device that Fig. 1 provides for the embodiment of the invention, its preparation method may further comprise the steps: form anode layer 2 at substrate 1; Then clean described substrate and it is carried out plasma treatment; Mode by vacuum evaporation on anode layer 2 forms hole transmission layer 3; Mode by vacuum evaporation on hole transmission layer 3 forms the leading luminescent layer 4 in hole; Mode by vacuum evaporation on the leading luminescent layer 4 in hole forms the leading luminescent layer 5 of electronics, mode by vacuum evaporation on the leading luminescent layer 5 of electronics forms hole blocking layer 6, mode by vacuum evaporation on hole blocking layer 6 forms resilient coating 7, mode by evaporation on resilient coating 7 forms negative electrode 8, obtains organic electroluminescence device as shown in Figure 1.
Compared with prior art, the present invention is with two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium as the blue-green luminous organic material, described luminescent material has high-luminous-efficiency and superior electron transport ability concurrently, by optimizing respectively the doping content of described luminescent material in the leading luminescent layer in hole and the leading luminescent layer of electronics, the mass percent that namely accounts for cavity type organic main body material at luminescent material described in the leading luminescent layer in hole is 6.0% ~ 16.0%, the mass percent that accounts for described electron type organic main body material at luminescent material described in the leading luminescent layer of electronics is 13.0% ~ 22.0%, thereby limited the scope between the luminous zone and guaranteed electronics and the hole in the balanced distribution of recombination region, delayed the efficient decay of device, and then so that device has obtained the blue-green electroluminescence of high brightness under lower operating voltage.
In order further to understand the present invention, below in conjunction with embodiment a kind of blue-green organic electroluminescence device provided by the invention and preparation method thereof is described.
With glass as substrate; Form the anode layer of indium tin oxide (ITO) material in glass substrate, and the anode layer chemical corrosion is become the strip shaped electric poles of 10 mm wides, 30 millimeters long, with strip shaped electric poles successively with cleaning fluid, deionized water ultrasonic cleaning 15 minutes and put into oven for drying, being ito anode to be carried out after 10 minutes the Low Pressure Oxygen plasma treatment it is transferred to the organic vapor deposition chamber with 400 volts voltage under the atmosphere of 10 handkerchiefs in vacuum degree with the electrode after the oven dry, is 1 ~ 2 * 10 in vacuum degree
-5In the organic vapor deposition chamber of handkerchief, on anode layer successively with the hole transmission layer of TAPC evaporation rate in 0.05 nm/sec evaporation, 50 nanometer thickness, the FIrpic evaporation rate in 0.008 nm/sec and MCP evaporation rate at the leading luminescent layer in the hole of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping MCP, FIrpic evaporation rate in 0.02 nm/sec and BCBP evaporation rate at the leading luminescent layer of the electronics of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping BCBP and the TmPyPB evaporation rate hole blocking layer in 0.05 nm/sec evaporation, 40 nanometer thickness; Then uncompleted device is transferred to the metal evaporation chamber, 4 ~ 6 * 10
-5Under the vacuum of handkerchief with the LiF resilient coating of evaporation rate evaporation 1.0 nanometer thickness of 0.005 nm/sec, then by mask metal A l electrode with evaporation rate evaporation 100 nanometer thickness of 0.5 nm/sec on the LiF layer, obtaining structure is the blue-green organic electroluminescence device of ITO/TAPC/FIrpic (8%): MCP/FIrpic (20%): BCBP/TmPyPB/LiF/Al.
The light-emitting area of described blue-green organic electroluminescence device is 10 square millimeters.
Described organic electroluminescence device is carried out performance test, the result is referring to Fig. 2, Fig. 3 and Fig. 4, current density-the voltage of the blue-green organic electroluminescence device that Fig. 2 provides for the embodiment of the invention 1-luminosity response figure, current density-the power efficiency of the blue-green organic electroluminescence device that Fig. 3 provides for the embodiment of the invention 1-current efficiency performance diagram, the electroluminescent spectrum figure of the blue-green organic electroluminescence device that Fig. 4 provides for the embodiment of the invention 1.As seen from the figure, a bright voltage of described blue-green organic electroluminescence device is 2.9 volts, and high-high brightness is 46249cd/m
2, maximum current efficient is 50.21cd/A, maximum power efficiency is 50.31lm/W, and under DC power supply drives, shows that main peak is positioned at the bluish-green coloured light that 472 nanometer acromions are positioned at 500 nanometers, when brightness is 20000cd/m
2The time, the chromaticity coordinates of device is (0.124,0.326).
With glass as substrate; Form the anode layer of indium tin oxide (ITO) material in glass substrate, and the anode layer chemical corrosion is become the strip shaped electric poles of 10 mm wides, 30 millimeters long, with strip shaped electric poles successively with cleaning fluid, deionized water ultrasonic cleaning 15 minutes and put into oven for drying, being ito anode to be carried out after 10 minutes the Low Pressure Oxygen plasma treatment it is transferred to the organic vapor deposition chamber with 400 volts voltage under the atmosphere of 10 handkerchiefs in vacuum degree with the electrode after the oven dry, is 1 ~ 2 * 10 in vacuum degree
-5In the organic vapor deposition chamber of handkerchief, on anode layer successively with the hole transmission layer of TAPC evaporation rate in 0.05 nm/sec evaporation, 40 nanometer thickness, the FIrpic evaporation rate in 0.01 nm/sec and MCP evaporation rate at the leading luminescent layer in the hole of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping MCP, FIrpic evaporation rate in 0.018 nm/sec and TmPyPB evaporation rate at the leading luminescent layer of the electronics of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping TmPyPB and the TmPyPB evaporation rate hole blocking layer in 0.05 nm/sec evaporation, 40 nanometer thickness; Then uncompleted device is transferred to the metal evaporation chamber, 4 ~ 6 * 10
-5Under the vacuum of handkerchief with the LiF resilient coating of evaporation rate evaporation 1.0 nanometer thickness of 0.005 nm/sec, then by mask metal A l electrode with evaporation rate evaporation 100 nanometer thickness of 0.5 nm/sec on the LiF layer, obtaining structure is the blue-green organic electroluminescence device of ITO/TAPC/FIrpic (10%): MCP/FIrpic (18%): TmPyPB/TmPyPB/LiF/Al.
The light-emitting area of described blue-green organic electroluminescence device is 10 square millimeters.
Described organic electroluminescence device is carried out performance test, the result is referring to Fig. 5 and Fig. 6, current density-the power efficiency of the blue-green organic electroluminescence device that the current density-voltage of the blue-green organic electroluminescence device that Fig. 5 provides for the embodiment of the invention 2-luminosity response figure, Fig. 6 provide for the embodiment of the invention 2-current efficiency performance diagram.As seen from the figure, a bright voltage of described blue-green organic electroluminescence device is 2.9 volts, and high-high brightness is 33932cd/m
2, maximum current efficient is 54.27cd/A, maximum power efficiency is 56.59lm/W, and under DC power supply drives, shows that main peak is positioned at the bluish-green coloured light that 472 nanometer acromions are positioned at 500 nanometers, when brightness is 20000cd/m
2The time, the chromaticity coordinates of device is (0.126,0.331).
With glass as substrate; Form the anode layer of indium tin oxide (ITO) material in glass substrate, and the anode layer chemical corrosion is become the strip shaped electric poles of 10 mm wides, 30 millimeters long, with strip shaped electric poles successively with cleaning fluid, deionized water ultrasonic cleaning 15 minutes and put into oven for drying, being ito anode to be carried out after 10 minutes the Low Pressure Oxygen plasma treatment it is transferred to the organic vapor deposition chamber with 400 volts voltage under the atmosphere of 10 handkerchiefs in vacuum degree with the electrode after the oven dry, is 1 ~ 2 * 10 in vacuum degree
-5In the organic vapor deposition chamber of handkerchief, on anode layer successively with the hole transmission layer of TAPC evaporation rate in 0.05 nm/sec evaporation, 50 nanometer thickness, the FIrpic evaporation rate in 0.008 nm/sec and TCP evaporation rate at the leading luminescent layer in the hole of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping TCP, FIrpic evaporation rate in 0.02 nm/sec and 26DCzPPy evaporation rate at the leading luminescent layer of the electronics of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping 26DCzPPy and the TmPyPB evaporation rate hole blocking layer in 0.05 nm/sec evaporation, 40 nanometer thickness; Then uncompleted device is transferred to the metal evaporation chamber, 4 ~ 6 * 10
-5Under the vacuum of handkerchief with the LiF resilient coating of evaporation rate evaporation 1.0 nanometer thickness of 0.005 nm/sec, then by mask metal A l electrode with evaporation rate evaporation 100 nanometer thickness of 0.5 nm/sec on the LiF layer, obtaining structure is the blue-green organic electroluminescence device of ITO/TAPC/FIrpic (8%): TCP/FIrpic (20%): 26DCzPPy/TmPyPB/LiF/Al.
The light-emitting area of described blue-green organic electroluminescence device is 10 square millimeters.
Described organic electroluminescence device is carried out performance test, and the result shows that a bright voltage of described blue-green organic electroluminescence device is 3.0 volts, and high-high brightness is 45622cd/m
2, maximum current efficient is 49.68cd/A, maximum power efficiency is 50.03lm/W, and under DC power supply drives, shows that main peak is positioned at the bluish-green coloured light that 472 nanometer acromions are positioned at 500 nanometers, when brightness is 20000cd/m
2The time, the chromaticity coordinates of device is (0.129,0.337).
With glass as substrate; Form the anode layer of indium tin oxide (ITO) material in glass substrate, and the anode layer chemical corrosion is become the strip shaped electric poles of 10 mm wides, 30 millimeters long, with strip shaped electric poles successively with cleaning fluid, deionized water ultrasonic cleaning 15 minutes and put into oven for drying, being ito anode to be carried out after 10 minutes the Low Pressure Oxygen plasma treatment it is transferred to the organic vapor deposition chamber with 400 volts voltage under the atmosphere of 10 handkerchiefs in vacuum degree with the electrode after the oven dry, is 1 ~ 2 * 10 in vacuum degree
-5In the organic vapor deposition chamber of handkerchief, on anode layer successively with the hole transmission layer of TAPC evaporation rate in 0.05 nm/sec evaporation, 40 nanometer thickness, the FIrpic evaporation rate in 0.008 nm/sec and MCP evaporation rate at the leading luminescent layer in the hole of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping MCP, FIrpic evaporation rate in 0.02 nm/sec and BCBP evaporation rate at the leading luminescent layer of the electronics of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping BCBP and the BmPyPhB evaporation rate hole blocking layer in 0.05 nm/sec evaporation, 40 nanometer thickness; Then uncompleted device is transferred to the metal evaporation chamber, 4 ~ 6 * 10
-5Under the vacuum of handkerchief with the LiF resilient coating of evaporation rate evaporation 1.0 nanometer thickness of 0.005 nm/sec, then by mask metal A l electrode with evaporation rate evaporation 100 nanometer thickness of 0.5 nm/sec on the LiF layer, obtaining structure is the blue-green organic electroluminescence device of ITO/TAPC/FIrpic (8%): MCP/FIrpic (20%): BCBP/BmPyPhB/LiF/Al.
The light-emitting area of described blue-green organic electroluminescence device is 10 square millimeters.
Described organic electroluminescence device is carried out performance test, and the result shows that a bright voltage of described blue-green organic electroluminescence device is 2.9 volts, and high-high brightness is 48325cd/m
2, maximum current efficient is 48.76cd/A, maximum power efficiency is 49.11lm/W, and under DC power supply drives, shows that main peak is positioned at the bluish-green coloured light that 472 nanometer acromions are positioned at 500 nanometers, when brightness is 20000cd/m
2The time, the chromaticity coordinates of device is (0.122,0.320).
With glass as substrate; Form the anode layer of indium tin oxide (ITO) material in glass substrate, and the anode layer chemical corrosion is become the strip shaped electric poles of 10 mm wides, 30 millimeters long, with strip shaped electric poles successively with cleaning fluid, deionized water ultrasonic cleaning 15 minutes and put into oven for drying, being ito anode to be carried out after 10 minutes the Low Pressure Oxygen plasma treatment it is transferred to the organic vapor deposition chamber with 400 volts voltage under the atmosphere of 10 handkerchiefs in vacuum degree with the electrode after the oven dry, is 1 ~ 2 * 10 in vacuum degree
-5In the organic vapor deposition chamber of handkerchief, on anode layer successively with the hole transmission layer of TAPC evaporation rate in 0.05 nm/sec evaporation, 45 nanometer thickness, the FIrpic evaporation rate in 0.01 nm/sec and MCP evaporation rate at the leading luminescent layer in the hole of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping MCP, FIrpic evaporation rate in 0.018 nm/sec and BmPyPhB evaporation rate at the leading luminescent layer of the electronics of 0.1 nm/sec evaporation, 5 nanometer thickness FIrpic doping BmPyPhB and the BmPyPhB evaporation rate hole blocking layer in 0.05 nm/sec evaporation, 40 nanometer thickness; Then uncompleted device is transferred to the metal evaporation chamber, 4 ~ 6 * 10
-5Under the vacuum of handkerchief with the LiF resilient coating of evaporation rate evaporation 1.0 nanometer thickness of 0.005 nm/sec, then by mask metal A l electrode with evaporation rate evaporation 100 nanometer thickness of 0.5 nm/sec on the LiF layer, obtaining structure is the blue-green organic electroluminescence device of ITO/TAPC/FIrpic (10%): MCP/FIrpic (18%): BmPyPhB/BmPyPhB/LiF/Al.
The light-emitting area of described blue-green organic electroluminescence device is 10 square millimeters.
Described organic electroluminescence device is carried out performance test, and the result shows that a bright voltage of described blue-green organic electroluminescence device is 2.8 volts, and high-high brightness is 35876cd/m
2, maximum current efficient is 53.45cd/A, maximum power efficiency is 54.72lm/W, and under DC power supply drives, shows that main peak is positioned at the bluish-green coloured light that 472 nanometer acromions are positioned at 500 nanometers, when brightness is 20000cd/m
2The time, the chromaticity coordinates of device is (0.128,0.327).
With glass as substrate; Form the anode layer of indium tin oxide (ITO) material in glass substrate, and the anode layer chemical corrosion is become the strip shaped electric poles of 10 mm wides, 30 millimeters long, with strip shaped electric poles successively with cleaning fluid, deionized water ultrasonic cleaning 15 minutes and put into oven for drying, being ito anode to be carried out after 10 minutes the Low Pressure Oxygen plasma treatment it is transferred to the organic vapor deposition chamber with 400 volts voltage under the atmosphere of 10 handkerchiefs in vacuum degree with the electrode after the oven dry, is 1 ~ 2 * 10 in vacuum degree
-5In the organic vapor deposition chamber of handkerchief, on anode layer successively with the hole transmission layer of TAPC evaporation rate in 0.05 nm/sec evaporation, 40 nanometer thickness, the FIrpic evaporation rate in 0.01 nm/sec and TCP evaporation rate at the leading luminescent layer in the hole of 0.1 nm/sec evaporation, 4 nanometer thickness FIrpic doping TCP, FIrpic evaporation rate in 0.018 nm/sec and BmPyPhB evaporation rate at the leading luminescent layer of the electronics of 0.1 nm/sec evaporation, 6 nanometer thickness FIrpic doping BmPyPhB and the BmPyPhB evaporation rate hole blocking layer in 0.05 nm/sec evaporation, 40 nanometer thickness; Then uncompleted device is transferred to the metal evaporation chamber, 4 ~ 6 * 10
-5Under the vacuum of handkerchief with the LiF resilient coating of evaporation rate evaporation 1.0 nanometer thickness of 0.005 nm/sec, then by mask metal A l electrode with evaporation rate evaporation 100 nanometer thickness of 0.5 nm/sec on the LiF layer, obtaining structure is the blue-green organic electroluminescence device of ITO/TAPC/FIrpic (10%): TCP/FIrpic (18%): BmPyPhB/BmPyPhB/LiF/Al.
The light-emitting area of described blue-green organic electroluminescence device is 10 square millimeters.
Described organic electroluminescence device is carried out performance test, and the result shows that a bright voltage of described blue-green organic electroluminescence device is 3.0 volts, and high-high brightness is 36215cd/m
2, maximum current efficient is 53.08cd/A, maximum power efficiency is 53.13lm/W, and under DC power supply drives, shows that main peak is positioned at the bluish-green coloured light that 472 nanometer acromions are positioned at 500 nanometers, when brightness is 20000cd/m
2The time, the chromaticity coordinates of device is (0.130,0.329).
The explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.
Claims (10)
1. blue-green organic electroluminescence device comprises:
Substrate;
At described substrate anode layer is arranged;
There is the hole to dominate luminescent layer at described anode layer, the leading luminescent layer in described hole is entrained in the cavity type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described cavity type organic main body material is 6.0% ~ 16.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Leading luminescent layer has electronics to dominate luminescent layer in described hole, the leading luminescent layer of described electronics is entrained in the electron type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described electron type organic main body material is 13.0% ~ 22.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
At the leading luminescent layer of described electronics negative electrode is arranged.
2. device according to claim 1 is characterized in that, described cavity type organic main body material is 4, two (the N-carbazoles)-1 of 4'-, 1'-biphenyl, 1,3-two carbazoles-9-base benzene, 9,9'-(5-(tri-phenyl-silane base)-1, the 3-phenyl) two-9H-carbazole, 1,3,5-three (9-carbazyl) benzene, 4,4', 4 " three (carbazole-9-yl) triphenylamines or Isosorbide-5-Nitrae-two (tri-phenyl-silane base) biphenyl.
3. device according to claim 1 is characterized in that, the thickness of the leading luminescent layer in described hole is 3 ~ 10 nanometers.
4. device according to claim 1, it is characterized in that, described electron type organic main body material is 9,9'-(2,6-pyridine two bases two-3, the inferior benzene of 1-) two-the 9H-carbazole, 1, two (tri-phenyl-silane base) benzene of 4-, 2,2 '-two (4-(9-carbazyl) phenyl) biphenyl, three [2,4,6-trimethyl-3-(3-pyridine radicals) phenyl] borine, 1,3,5-three [(3-pyridine)-3-phenyl] benzene, 1,3-two [3,5-two (3-pyridine radicals) phenyl] benzene or 9-(4-t-butyl-phenyl)-3, two (triphenyl the is silica-based)-9H-carbazoles of 6-.
5. device according to claim 1 is characterized in that, the thickness of the leading luminescent layer of described electronics is 3 ~ 10 nanometers.
6. device according to claim 1 is characterized in that, also comprises hole transmission layer between the leading luminescent layer in described anode layer and hole;
Described hole transmission layer is formed by 4,4'-cyclohexyl two [N, N-two (4-aminomethyl phenyl) aniline].
7. device according to claim 1 is characterized in that, also comprises hole blocking layer between the leading luminescent layer of described electronics and the negative electrode;
Described hole blocking layer is by three [2,4,6-trimethyl-3-(3-pyridine radicals) phenyl] borine, 1,3, and two [3,5-two (3-pyridine radicals) phenyl] benzene of 5-three [(3-pyridine)-3-phenyl] benzene or 1,3-form.
8. method according to claim 7 is characterized in that, also comprises resilient coating between described hole blocking layer and the negative electrode;
Described resilient coating is formed by lithium fluoride.
9. the preparation method of a blue-green organic electroluminescence device comprises:
Form anode layer at substrate;
Form the leading luminescent layer in hole at described anode layer, the leading luminescent layer in described hole is entrained in the cavity type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described cavity type organic main body material is 6.0% ~ 16.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Leading luminescent layer forms the leading luminescent layer of electronics in described hole, the leading luminescent layer of described electronics is entrained in the electron type organic main body material by the blue-green luminous organic material and forms, the mass percent that described blue-green luminous organic material accounts for described electron type organic main body material is 13.0% ~ 22.0%, described blue-green luminous organic material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium;
Form negative electrode at the leading luminescent layer of described electronics, obtain the blue-green organic electroluminescence device.
10. method according to claim 9 is characterized in that, the thickness of the leading luminescent layer in described hole is 3 ~ 10 nanometers;
The thickness of the leading luminescent layer of described electronics is 3 ~ 10 nanometers.
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