CN102969377A - Photovoltaic subassembly, PN (positive-negative) junction element and manufacturing method of PN junction element - Google Patents
Photovoltaic subassembly, PN (positive-negative) junction element and manufacturing method of PN junction element Download PDFInfo
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- CN102969377A CN102969377A CN2012105288675A CN201210528867A CN102969377A CN 102969377 A CN102969377 A CN 102969377A CN 2012105288675 A CN2012105288675 A CN 2012105288675A CN 201210528867 A CN201210528867 A CN 201210528867A CN 102969377 A CN102969377 A CN 102969377A
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The invention discloses a photovoltaic subassembly comprising battery slices, solder strips, bus strips, a glass plate and a back plate, wherein a plurality of battery slices are connected in series to form battery strings by the solder strips; the plurality of battery strings are connected in series by the bus strips and are arranged between the glass plate and the back plate, so that the photovoltaic subassembly is formed; the photovoltaic subassembly also comprises a plurality of PN (positive-negative) junction elements, and each battery slice is connected with one PN junction element in parallel. The resistance of each battery slice is increased, and the current can not pass, so that voltage drop exists at two surface of each battery slice when the battery slices are shielded in the working process of the photovoltaic subassembly; and the PN junction elements connected with the battery slices in parallel are opened, when the battery slices are in a short circuit state, so that the shielded battery slices are prevented from generating a hot spot effect. According to the structure, only the shielded battery slices are in the short circuit state, and the other battery slices can be used for exporting electric energy. Compared with the prior art, the photovoltaic subassembly has high work efficiency when battery slices are shielded. The invention also discloses the PN junction elements and the manufacturing method of the PN junction element.
Description
Technical field
The present invention relates to the photovoltaic technology field, particularly relate to a kind of photovoltaic module.In addition, the invention still further relates to a kind of PN junction element and preparation method thereof.
Background technology
Photovoltaic module can become electric energy with transform light energy, and the cell piece that is encapsulated in the photovoltaic module is the photoelectric conversion unit of photovoltaic module.
In the manufacturing process of photovoltaic module, with welding cell piece is connected into battery strings first, then battery strings is set successively and connect with convergent belt, and make battery strings between backboard and glass plate, carry out lamination, whether carry out the electroluminescence test before and after the lamination, detecting cell piece has the quality problems such as crackle, unfilled corner; Install frame around the photovoltaic module behind lamination, then terminal box is installed, the convergent belt series connection that terminal box can be drawn photovoltaic module, and be diodes of per two crosstalk pond connection in series-parallel.
When any a slice cell piece was blocked in the battery strings, this sheet cell piece just can not generate electricity, and it is large that the resistance of the cell piece that can not generate electricity can become, if diode is not installed, this sheet cell piece can consume the electric energy that all the other cell pieces send, and the heating burnout assembly, produces hot spot effect.
Install after the diode, diode has the effect of forward conduction backward stop, and this sheet cell piece becomes large owing to block resistance, electric current can't pass through, so that there is pressure drop in the diode two ends, opens diode, with the battery strings short circuit, can not produce hot spot effect, can not burn photovoltaic module yet.
Conventional photovoltaic module has 6 string battery strings usually, and every string battery strings has 6-12 sheet cell piece, 1 diode in parallel between every 2 adjacent string battery strings, and each photovoltaic module has 3 diodes.After having cell piece to be blocked in the photovoltaic module, for fear of burning assembly, diode can be with the 2 string battery strings short circuits at this cell piece place, can cause this moment in this 2 string battery strings, except the cell piece that is blocked, can't derive the electric energy that all the other cell pieces produce, the wasting while, also reduce the operating efficiency of photovoltaic module.
In view of this, demand urgently designing a kind of photovoltaic module for above-mentioned technical problem, have again higher operating efficiency when can avoid producing hot spot effect.
Summary of the invention
The purpose of this invention is to provide a kind of photovoltaic module, this photovoltaic module can either be avoided producing hot spot effect and have again higher operating efficiency.In addition, another object of the present invention provides a kind of PN junction element and preparation method thereof.
In order to realize above-mentioned technical purpose, the invention provides a kind of photovoltaic module, comprise cell piece, welding, convergent belt, glass plate and backboard, some described cell pieces are linked to be battery strings by described welding series connection, some described battery strings are by described convergent belt series connection and form photovoltaic module between described glass plate and described backboard, also comprise some PN junction elements, each described cell piece described PN junction element in parallel.
Preferably, described PN junction element is the substrate with PN junction.
Preferably, described PN junction element is silica-based diffusion bar.
Preferably, the front of described silica-based diffusion bar has anodal grid line, and the back side has the negative pole grid line.
Preferably, the described welding that is connected with the anodal grid line of described cell piece connects the anodal grid line of described silica-based diffusion bar, and the described welding that is connected with the negative pole grid line of described cell piece connects the negative pole grid line of described silica-based diffusion bar.
The present invention also provides a kind of manufacture method of the PN junction element for above-mentioned photovoltaic module, may further comprise the steps:
1) cleaning silicon chip simultaneously spreads it, and then this face is positive, its inner PN junction that forms after the diffusion;
2) edge of wet etching silicon chip.
Preferably, further comprising the steps of:
3) to the positive printed silver aluminium paste of silicon chip, form anodal grid line, oven dry, the position printing aluminium paste beyond anodal grid line, oven dry;
4) to the back up silver aluminium paste of silicon chip, form the negative pole grid line, and the negative pole grid line is relative with the position of anodal grid line, oven dry, the position printing aluminium paste beyond the negative pole grid line, oven dry;
5) silicon chip is carried out sintering;
6) use scribing machine in the direction vertical with anodal grid line or negative pole grid line, cut according to preset width, obtain silica-based diffusion bar.
Preferably, the boron that is diffused as in the step 1) spreads.
Preferably, described silicon chip is the N-type single-chip.
The present invention also provides a kind of PN junction element, and described PN junction element is obtained by above-mentioned manufacture method.
Photovoltaic module provided by the invention, comprise cell piece, welding, glass plate and backboard, some cell pieces are linked to be battery strings by the welding series connection, some battery strings are by the convergent belt series connection and form photovoltaic module between glass plate and backboard, photovoltaic module also comprises some PN junction elements, each cell piece PN junction element in parallel.
During photovoltaic module work, the cell piece of photovoltaic module is electric energy with transform light energy, and by welding and convergent belt electric energy is derived.When having cell piece to be blocked in the photovoltaic module, it is large that the resistance of this cell piece becomes, electric current can't pass through, so that there is pressure drop in the two poles of the earth of cell piece, can open the PN junction element of therewith cell piece parallel connection, then electric current will be from then on the PN junction element flow through, with the cell piece short circuit that is blocked, can avoid this cell piece to produce hot spot effect; In this structure, the cell piece that only is blocked is by the PN junction element short circuit in parallel with it, and remaining cell piece all can work, electric energy is derived, the photovoltaic module of this structure, compared with prior art, when having cell piece to be blocked, has higher operating efficiency.
Concrete, the PN junction element can be silica-based diffusion bar, can print anodal grid line in the front of silica-based diffusion bar, back up negative pole grid line, can be by welding that cell piece and silica-based diffusion bar is in parallel, again by welding with parallel connection the cell piece of silica-based diffusion bar be connected into battery strings.
The present invention also provides a kind of manufacture method of the PN junction element for above-mentioned photovoltaic module, and the inside by the diffusion silicon chip forms PN junction.In addition, the present invention also provides the PN junction element that is obtained by above-mentioned manufacture method.
Description of drawings
Fig. 1 is the structural representation of the battery strings of photovoltaic module provided by the present invention;
Fig. 2 is the structural representation that amplify the part of the battery strings of photovoltaic module shown in Figure 1;
Fig. 3 is the flow chart of a kind of embodiment of manufacture method of PN junction element provided by the present invention;
Fig. 4 is the flow chart of the another kind of embodiment of manufacture method of PN junction element provided by the present invention.
Wherein, the Reference numeral among Fig. 1 is as follows:
Reference numeral among Fig. 2 is as follows:
The first cell piece 11; The second cell piece 12; The first silica-based diffusion bar 21; The second silica-based diffusion bar 22; Anodal grid line 23; The first welding 31; The second welding 32.
Embodiment
Core of the present invention provides a kind of photovoltaic module, and this photovoltaic module can either be avoided producing hot spot effect and have again higher operating efficiency.In addition, another core of the present invention provides a kind of PN junction element and preparation method thereof.
In order to make those skilled in the art person understand better the present invention program, the present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Please refer to Fig. 1, Fig. 1 is the structural representation of the battery strings of photovoltaic module provided by the present invention.
In a kind of concrete execution mode, the invention provides a kind of photovoltaic module, comprise cell piece 1, welding 3, convergent belt 4, glass plate and backboard, some cell pieces 1 are linked to be battery strings by welding 3 series connection, some battery strings are by convergent belt 4 series connection and form photovoltaic module between glass plate and backboard, this photovoltaic module also comprises some PN junction elements 2, each cell piece 1 PN junction element 2 in parallel.
During photovoltaic module work, the cell piece 1 of photovoltaic module is electric energy with transform light energy, and by welding 3 and convergent belt 4 electric energy is derived.
When having cell piece 1 to be blocked in the photovoltaic module, the resistance of the cell piece 1 that is blocked will become large, electric current can't pass through, so that there is pressure drop in the two poles of the earth of cell piece 1, this pressure drop can be opened the therewith PN junction element 2 of cell piece 1 parallel connection, then electric current will be from then on PN junction element 2 flow through, with cell piece 1 short circuit that is blocked.
The PN junction element 2 of cell piece 1 parallel connection consumes the energy that other cell pieces 1 produce in the time of can avoiding this cell piece 1 to be blocked, can avoid this cell piece 1 heating burnout photovoltaic module, and the cell piece 1 of namely having avoided being blocked produces hot spot effect.
In the photovoltaic module of this structure, when having cell piece 1 to be blocked, the cell piece 1 that only is blocked is by PN junction element 2 short circuits in parallel with it, and remaining cell piece 1 all can work, and electric energy is derived; And in the prior art, when having cell piece 1 to be blocked in the photovoltaic module, two string battery strings will be arranged by short circuit.Photovoltaic module provided by the invention compared with prior art when having cell piece 1 to be blocked, has higher operating efficiency.
Concrete, PN junction element 2 can be for having the substrate of PN junction.PN junction has unilateral conduction, P type semiconductor and N type semiconductor is produced on the same semiconductor chip, and normally silicon or germanium, the space charge region that forms at their interface claims PN junction.
By silicon chip process doping process, the mode that for example spreads, the inside of acquisition has the silicon chip of PN junction, be processed into strip, namely silica-based diffusion bar is in parallel with cell piece 1 with silica-based diffusion bar again, again cell piece 1 is connected into battery strings, just battery strings can be made above-mentioned photovoltaic module.
The PN junction element 2 in parallel with cell piece 1 can also can be strip for sheet, use the PN junction element 2 of strip, can avoid the volume of photovoltaic module excessive, have the PN junction structure, element that can one-way conduction when two ends have pressure reduction can be used in the present invention.
For convenient that silica-based diffusion bar is in parallel with cell piece 1, can print anodal grid line for the front of silica-based diffusion bar, back up negative pole grid line, then by welding 3 that cell piece 1 and silica-based diffusion bar is in parallel.
Concrete, can be by the welding 3 batteries in parallel connection sheets 1 and silica-based diffusion bar of series cells 1, the welding 3 that soon is connected with cell piece 1 anodal grid line connects the anodal grid line of silica-based diffusion bar, and the welding 3 that is connected with cell piece 1 negative pole grid line connects the negative pole grid line of silica-based diffusion bar.
The concrete structure of battery strings after connecting, please refer to Fig. 2, Fig. 2 is the structural representation that amplify the part of the battery strings of photovoltaic module shown in Figure 1, cell piece 1 among Fig. 2 and silica-based diffusion bar are the front, the part of the anodal grid line 23 of the whole and silica-based diffusion bar of the anodal grid line of cell piece 1 is all covered by welding 3, and cell piece 1 all has three anodal grid lines with silica-based diffusion bar among Fig. 2.
As shown in Figure 2, among the first welding 31(figure from top to bottom) connected successively the anodal grid line 23 of the first silica-based diffusion bar 21, the anodal grid line of the first cell piece 11, the negative pole grid line of the second silica-based diffusion bar 22, the negative pole grid line of the second cell piece 12; Among the second welding 32(figure from top to bottom) connected successively the anodal grid line 23 of the second silica-based diffusion bar 22, the anodal grid line of the second cell piece 12, the negative pole grid line of the 3rd silica-based diffusion bar, the negative pole grid line of the 3rd cell piece, wherein, not shown among the 3rd silica-based diffusion bar and the 3rd cell piece Fig. 2; This kind connected mode when namely having realized welding 3 series cells 1, is each cell piece 1 silica-based diffusion bar in parallel.
The structure that has shown whole battery strings among Fig. 1, the welding 3 of the upper end of battery strings connects the front of cell piece 1 and silica-based diffusion bar among Fig. 1, namely anodal, then this end is the positive terminal of battery strings, the lower end of battery strings is negative pole end, and the welding 3 of negative pole end connects the back side of cell piece 1 and silica-based diffusion bar, i.e. negative pole; Be positioned at the welding 3 at battery strings middle part, weld successively the negative pole of a cell piece 1, therewith positive pole, the positive pole of the silica-based diffusion bar of cell piece parallel connection therewith of negative pole, another cell piece 1 of the silica-based diffusion bar of cell piece parallel connection by from top to bottom direction among Fig. 1, only show welding 3 and cell piece 1 among Fig. 1 and be connected the part that the positive pole of diffusion bar is connected.
Please refer to Fig. 3, Fig. 3 is the flow chart of a kind of embodiment of manufacture method of PN junction element provided by the present invention.
The present invention also provides a kind of manufacture method of the PN junction element for above-mentioned photovoltaic module, may further comprise the steps:
Step S1, cleaning silicon chip simultaneously spreads it, and then this face is positive, its inner PN junction that forms after the diffusion;
Step S2, the edge of wet etching silicon chip.
Can obtain to have the substrate of PN junction by above-mentioned steps, this substrate can one-way conduction, can be applied in the above-mentioned photovoltaic module, this substrate is in parallel with cell piece 1, when cell piece 1 is blocked, the voltage of 1 liang of interpolar of cell piece can be opened the PN junction of substrate, with this cell piece 1 short circuit, can avoid this cell piece 1 to produce spottiness.And, the short circuit of this substrate the cell piece 1 in parallel with it, the cell piece 1 in the photovoltaic module except the cell piece 1 that is blocked all can work, and has improved the operating efficiency when having cell piece 1 to be blocked in the photovoltaic module.
In the concrete execution mode, can also print electrode for substrate, namely at the anodal grid line of its positive printing, back up negative pole grid line, grid line can collected currents, and grid line is connected with welding, with current delivery to welding 3, by welding 3 derivation.
Substrate can also be processed into strip, make its length equal the width of cell piece 1, and making its anodal grid line identical in the position of cell piece 1 Width with anodal grid line and the negative pole grid line of cell piece 1 in the position of its length direction with the negative pole grid line, this structure makes things convenient for welding 3 batteries in parallel connection sheets 1 and PN junction element.
Please refer to Fig. 4, Fig. 4 is the flow chart of the another kind of embodiment of manufacture method of PN junction element provided by the present invention.
A kind of preferred embodiment in, the manufacture method of PN junction element provided by the invention may further comprise the steps:
Step S1 cleans the N-type single-chip, and it is simultaneously carried out the boron diffusion, and then this face is positive, its inner PN junction that forms after the diffusion;
Can use the N-type single-chip to make the PN junction element, at first, clean the N-type single-chip, can use clear water, also can adopt chemical reagent, such as nitric acid, hydrofluoric acid etc. washes the impurity on N-type single-chip surface; Then, the one side of N-type single-chip is carried out the boron diffusion, diffuse into uniformly the boron atom at this face, make the inner PN junction that forms of N-type single-chip, this face that then expands the boron face is the front of N-type single-chip.
Step S2, the edge of wet etching N-type single-chip;
Because after the boron diffusion, not only the front of N-type single-chip can form PN junction among the step S1, its periphery also can form PN junction, and the wet etching of this step is used for removing the PN junction of N-type single-chip periphery.
Step S3, the positive printed silver aluminium paste to the N-type single-chip forms anodal grid line, oven dry, the position printing aluminium paste beyond anodal grid line, oven dry;
Print anodal grid line in the front of N-type single-chip, usually with silver-colored aluminium paste printing grid line, utilize equipment that the front that silver-colored aluminium paste is squeezed in the N-type single-chip is uniformly formed anodal grid line, the wide of grid line can be 2mm, the position of grid line can be identical with the position of the grid line of its cell piece in parallel, can make things convenient for the connection of welding.
After the printing, cell piece is put into drying oven, hyperthermia drying moisture can avoid following operation to destroy grid line.Because silver-colored aluminium paste is a kind of solution, does not namely directly enter following aluminium paste printing if do not dry, can destroy the anodal grid line that has printed on the one hand, on the other hand also can contaminated equipment.
When the front aluminium paste prints, also can push aluminium paste by equipment, make aluminium paste cover uniformly the remainder of front except anodal grid line of N-type single-chip, the aluminium paste of printing can help collected current to be transferred to anodal grid line.
And then first drying, the moisture in the oven dry aluminium paste.
Step S4, the back up silver aluminium paste to the N-type single-chip form the negative pole grid line, and the negative pole grid line is relative with the position of anodal grid line, oven dry, the position printing aluminium paste beyond the negative pole grid line, oven dry;
The printing of back side negative pole grid line is identical with the typography of positive anodal grid line, at the back up negative pole grid line of N-type single-chip, after the oven dry, at the remainder printing aluminium paste of the back side of N-type single-chip except the negative pole grid line, dries first again.
Carrying out above-mentioned 2 whens step, so that the anodal grid line of N-type single-chip is relative with the position of negative pole grid line, and so that the width of the anodal grid line of N-type single-chip and cell piece and negative pole grid line is identical, the position is identical, can make things convenient for welding with the two parallel connection.
Step S5 carries out sintering to the N-type single-chip;
Sintering can carry out in sintering furnace, and sintering process can be finished in the process of constant temperature in the sintering furnace.Sintering can make aluminium paste under the environment of uniform temperature, with phase counterdiffusion between the N-type single-chip after the diffusion, so that the part aluminium paste enters the inside of N-type single-chip, forms an integral body with the N-type single-chip, and this structure can better collected current, reduces contact resistance.
Step S6, cuts according to preset width in the direction vertical with anodal grid line or negative pole grid line with scribing machine, obtains silica-based diffusion bar.
Behind the sintering, can utilize scribing machine in the direction vertical with grid line, predetermined width cutting N-type single-chip is installed, obtain the silica-based diffusion bar of preset width.Scribing machine can be the laser scribing means that utilizes the laser cutting principle to make.
More than photovoltaic module, PN junction element with diffusion bar provided by the present invention and preparation method thereof is described in detail.Used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.
Claims (10)
1. photovoltaic module, comprise cell piece (1), welding (3), convergent belt (4), glass plate and backboard, some described cell pieces (1) are linked to be battery strings by described welding (3) series connection, some described battery strings are by described convergent belt (4) series connection and form photovoltaic module between described glass plate and described backboard, it is characterized in that, also comprise some PN junction elements (2), each described cell piece (1) described PN junction element (2) in parallel.
2. photovoltaic module as claimed in claim 1 is characterized in that, described PN junction element (2) is for having the substrate of PN junction.
3. photovoltaic module as claimed in claim 2 is characterized in that, described PN junction element (2) is silica-based diffusion bar.
4. photovoltaic module as claimed in claim 3 is characterized in that, the front of described silica-based diffusion bar has anodal grid line, and the back side has the negative pole grid line.
5. photovoltaic module as claimed in claim 4, it is characterized in that, the described welding (3) that is connected with the anodal grid line of described cell piece (1) connects the anodal grid line of described silica-based diffusion bar (2), and the described welding (3) that is connected with the negative pole grid line of described cell piece (1) connects the negative pole grid line of described silica-based diffusion bar (2).
6. manufacture method that is used for the PN junction element of photovoltaic module claimed in claim 1 may further comprise the steps:
1) cleaning silicon chip simultaneously spreads it, and then this face is positive, its inner PN junction that forms after the diffusion;
2) edge of wet etching silicon chip.
7. the manufacture method of PN junction element as claimed in claim 6 is characterized in that, and is further comprising the steps of:
3) to the positive printed silver aluminium paste of silicon chip, form anodal grid line, oven dry, the position printing aluminium paste beyond anodal grid line, oven dry;
4) to the back up silver aluminium paste of silicon chip, form the negative pole grid line, and the negative pole grid line is relative with the position of anodal grid line, oven dry, the position printing aluminium paste beyond the negative pole grid line, oven dry;
5) silicon chip is carried out sintering;
6) use scribing machine in the direction vertical with anodal grid line or negative pole grid line, cut according to preset width, obtain silica-based diffusion bar.
8. the manufacture method of PN junction element as claimed in claim 7 is characterized in that, the boron that is diffused as in the step 1) spreads.
9. the manufacture method of PN junction element as claimed in claim 8 is characterized in that, described silicon chip is the N-type single-chip.
10. a PN junction element is characterized in that, described PN junction element is obtained by each described manufacture method of claim 6 to 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109638098A (en) * | 2018-12-03 | 2019-04-16 | 珠海格力电器股份有限公司 | A kind of battery pack structure, photovoltaic module and production method |
| CN111403530A (en) * | 2020-03-25 | 2020-07-10 | 常州亚玛顿股份有限公司 | Highlight utilization rate subassembly of dysmorphism reflective conductor |
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| US20100132759A1 (en) * | 2009-06-12 | 2010-06-03 | Renhe Jia | Cell isolation on photovoltaic modules for hot spot reduction |
| CN101950772A (en) * | 2010-08-05 | 2011-01-19 | 中山大学 | Preparation method of crystalline silicon solar cell with bypass diode |
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| CN2924794Y (en) * | 2006-07-05 | 2007-07-18 | 阿特斯太阳能光电(苏州)有限公司 | Solar cell assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109638098A (en) * | 2018-12-03 | 2019-04-16 | 珠海格力电器股份有限公司 | A kind of battery pack structure, photovoltaic module and production method |
| CN109638098B (en) * | 2018-12-03 | 2020-07-24 | 珠海格力电器股份有限公司 | Battery pack structure, photovoltaic module and production method |
| CN111403530A (en) * | 2020-03-25 | 2020-07-10 | 常州亚玛顿股份有限公司 | Highlight utilization rate subassembly of dysmorphism reflective conductor |
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