CN102969231B - A kind of manufacture method of metal gate - Google Patents
A kind of manufacture method of metal gate Download PDFInfo
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- CN102969231B CN102969231B CN201110256164.7A CN201110256164A CN102969231B CN 102969231 B CN102969231 B CN 102969231B CN 201110256164 A CN201110256164 A CN 201110256164A CN 102969231 B CN102969231 B CN 102969231B
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Abstract
The invention provides a kind of manufacture method of metal gate, while removing the oxide layer on metal gate by argon sputtering technology, effectively protect the nickel-silicon metal of active area.First provide semiconductor base, described semiconductor base is formed source electrode, drain electrode, metal gates and self-alignment silicide layer.Then following steps are carried out: deposition of aluminium oxide film; Form contact hole etching stopping layer; Form interlayer dielectric layer; Form photoresist layer; Carry out the figure Shape definition of contact hole; Remove described photoresist layer and a part of contact hole etching stopping layer; Carry out argon sputtering technology, open the alumina layer that described metal gates autoxidation is formed.Finally carry out the step of contact metal deposition and cmp.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor device, particularly a kind of manufacture method of metal gate.
Background technology
In the development of integrated circuit, gate electrode is made with metal, fundamentally can eliminate the boron penetration effects of polysilicon gate depletion layer effect and p type field effect transistor, obtain low-down grid sheet resistance, and metal gate can be compatible with high-dielectric-coefficient grid medium well, effectively overcomes Fermi's pinning effect.Therefore the preparation method of metal gate becomes very important technological means.Because metal gate is easy to be oxidized in atmosphere, the oxide layer formed can cause contact hole to disconnect, and therefore must remove this oxide layer before the adhesive layer of Deposit contact hole.In the prior art, usually adopt the alumina layer that argon sputtering method removal metal gate top is formed due to autoxidation, but this can cause nickel-silicon loss of active area, and destroy the exterior contour of contact hole, as seen in figs. 1 a-1b.
Contact hole etching stopping layer (ContactEtchStopLayer, CESL) is generally silicon nitride (SiN) material.Prior art provides a kind of method, retains the silicon nitride material on a part of nickel-silicon metal level in etching process.In argon sputtering technology process, while opening the alumina layer on metal gate by physics exposure, the silicon nitride layer be retained also is consumed completely in physics exposure process.In metal gate process processing procedure, rear grid technique can the work function of control gate material well, and the favourable silicon adaptability to changes improving channel carrier mobility can also be provided for the raceway groove of PMOS, therefore contribute to the performance of improving product and reduce the stand-by power consumption of product.But, for rear grid technique processing procedure, some difficult problems can be run in etching and chemico-mechanical polishing (CMP) operation.Due in the etching process of this method, selectivity between metallic aluminium and silicon nitride is very large, causes process window very little, can not control the reservation of silicon nitride well: when retained nitrogen SiClx is too much, because whole silicon nitride can be removed by argon sputter procedure, contact hole thus can be caused to open; When retained nitrogen SiClx is very few, the punch through of nickel-silicon can be caused.
In sum, in the rear grid technique manufacturing process of metal gate, while protection nickel-silicon metal level, how effectively to remove the oxide layer on metal gate, be the important step in metal gate manufacture craft.
Summary of the invention
The present invention relates to a kind of manufacture method of semiconductor device, particularly a kind of manufacture method of metal gate.In existing metal gate process processing procedure, because argon sputtering technology process causes nickel-silicon loss.The present invention proposes a kind of manufacture method of metal gate, and the nickel of active area-silicon metal is protected.
The invention provides a kind of manufacture method of metal gate, comprising:
Semiconductor base is provided; Described semiconductor base is formed source electrode, drain electrode, metal gates and is formed at the self-alignment silicide layer on source electrode, drain electrode, metal gates surface; Deposition of aluminium oxide film on described semiconductor base; Form contact hole etching stopping layer; Form interlayer dielectric layer; Form photoresist layer; Carry out the figure Shape definition of contact hole; Remove described photoresist layer and a part of contact hole etching stopping layer; Carry out argon sputtering technology, remove the aluminum oxide film at described metal gates top and the oxide layer of autoxidation formation.
Preferably, described self-alignment silicide layer is nickel-silicon metal material.
Preferably, described aluminum oxide film film thickness is 10 ~ 40.
Preferably, described contact hole etching stopping layer is silicon nitride material.
Preferably, described metal gates is metallic aluminium or aluminum titanium alloy material.
Preferably, insert a silicon nitride layer in described interlayer dielectric layer, this silicon nitride layer is hard mask layer in argon sputtering technology and exhaustion layer.
Preferably, described silicon nitride layer is 30 ~ 100 to the distance on described interlayer dielectric layer surface.
Preferably, described silicon nitride layer is used as the critical size reducing described contact hole.
Preferably, before formation photoresist layer, formation bottom anti-reflection layer is also comprised.
Preferably, after the described photoresist layer of removal, the described bottom anti-reflection layer of removal is also comprised.
Preferably, after carrying out argon sputtering technology, also comprise the step of contact metal deposition and cmp.
The present invention removes the autoxidizable oxide layer of metal gate top layer by physical method.Method provided by the invention has the following advantages: can protect the nickel of active area-silicon metal well and obtain the process window of device; The exterior contour of contact hole is also protected, thus the deposition of adhesive layer subsequently is easily carried out; Without the need to additional special cmp or wet clean process.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of one embodiment of the present of invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
Figure 1A-1B adopts argon sputtering method to remove the technological process sectional view being positioned at the alumina layer that metal gate top layer autoxidation is formed in prior art;
Fig. 2 A-2F is the sectional view making each step in the method flow of metal gate according to one embodiment of the invention;
Fig. 3 is the process chart making metal gate according to one embodiment of the invention.
Symbol description:
Fig. 1
100: semiconductor base, 101: metal gates, 102: self-alignment silicide layer, 103: shallow channel isolation area, 110: contact hole etching stopping layer, 120: oxide layer, 121: the first interlayer dielectric layers, 122: the second interlayer dielectric layers, 123 that metal gates autoxidation is formed: contact hole
Fig. 2
200: semiconductor base, 201: metal gates, 202: self-alignment silicide layer, 211: aluminum oxide film, 212: contact hole etching stopping layer, 220: oxide layer, 221: the first interlayer dielectric layers, 222: the second interlayer dielectric layers, 223 that metal gates autoxidation is formed: hard mask layer and exhaustion layer, 224: bottom anti-reflection layer, 225: photoresist layer, 230: contact metal
embodiment.
Next, will more intactly describe the present invention by reference to the accompanying drawings, shown in accompanying drawing, describe inventive embodiment as the cross-sectional view of the schematic diagram of desirable embodiment of the present invention (and intermediate structure).In the accompanying drawings, in order to clear, the size in Ceng He district and relative size may be exaggerated.Further, due to such as manufacturing technology and/or tolerance, shown change of shape is caused.Therefore, embodiments of the invention should not be confined to the specific size shape in district shown here, but comprise owing to such as manufacturing the form variations caused.The district shown in figure is in fact schematic, and their shape is not intended the actual size in the district of display device and shape and is not intended to limit scope of the present invention.The present invention can implement in different forms, and should not be interpreted as the embodiment that is confined to propose here.On the contrary, provide these embodiments will expose thoroughly with complete, and scope of the present invention is fully passed to those skilled in the art.
The object of term is only to describe specific embodiment and not as restriction of the present invention as used herein.Should be noted that, when element or layer be called as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other element or layer time, its can directly on other element or layer, with it adjacent, connect or be coupled to other element or layer, or the element that can exist between two parties or layer.On the contrary, when element be called as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other element or layer time, then there is not element between two parties or layer.It should be noted that " one " of singulative, " one " and " described/should " also intention comprise plural form, unless context is known point out other mode.Also should be noted that, term " composition " and/or " comprising ", when using in these specifications, determine the existence of described feature, integer, step, operation, element and/or parts, but do not get rid of one or more other feature, integer, step, operation, element, the existence of parts and/or group or interpolation.When this uses, term "and/or" comprises any of relevant Listed Items and all combinations.
Fig. 2 A-2F is the sectional view making each step in the method flow of metal gate according to one embodiment of the invention.
First, provide semiconductor substrate 200, described semiconductor base 200 is formed source electrode, drain electrode, metal gates 201, and form the self-alignment silicide layer 202 for reducing contact resistance on the surface at described source electrode, drain electrode, metal gates.The illustrative examples that can be used as the semi-conducting material of semiconductor base comprises: SiGe (SGOI) on Si, SiGe, SiC, SiGeC, silicon-on-insulator (SOI) or insulator, but is not limited thereto.Preferably, described metal gates 201 is metal aluminum or aluminum alloy, as aluminum titanium alloy.Self-aligning metal silicide technology completes via following steps: in semiconductor substrate surface sputtered metal layer, such as, comprise the material of nickel (nickel), cobalt (cobalt) and platinum (platinum) or its combination.Then carry out RTA (RTA) technique, the partial reaction that metal level is contacted with grid and regions and source/drain forms metal silicified layer.Then erodable metal level is used, but the etchant in unlikely attack metal disilicide layer region, so that unreacted metal level is removed.Preferably, described self-alignment silicide layer 202 is nickel-silicon metal material.
Then, please refer to Fig. 2 A, after the nickel-silicon structure forming described self-alignment silicide layer 202, deposition one deck aluminum oxide film 211.Described aluminum oxide film 211 is by such as chemical vapour deposition technique or physical vaporous deposition deposition.Preferably, described alumina layer thickness is 10 ~ 40.Next the deposition of contact hole etching stopping layer 212 is carried out.Etching stopping layer can comprise a dielectric material, as material, nitrogenous material, carbonaceous material or homologue.It is any number of that etching stopping layer can comprise in several etch stop materials.Non-limiting example comprises conductor etch and stops material, conductor etching to stop material and dielectric etch stop material.Preferably, described contact hole etching stopping layer 212 is silicon nitride material.
Because metal gate is easy to be oxidized in atmosphere, the oxide layer 220 that metal gates autoxidation is formed thus can be formed.Then, please refer to Fig. 2 B, form interlayer dielectric layer and photoresist layer respectively.Preferably, interlayer dielectric layer is silicon oxide layer, comprise the material layer having doping or unadulterated silica utilizing thermal chemical vapor deposition (thermalCVD) manufacturing process or high-density plasma (HDP) manufacturing process to be formed, the silex glass (USG) of such as undoped, phosphorosilicate glass (PSG) or boron-phosphorosilicate glass (BPSG).Preferably, the first interlayer dielectric layer 221 and the second interlayer dielectric layer 222 is formed respectively.Preferably, in the second interlayer dielectric layer 222, insert a silicon nitride layer, this silicon nitride layer is hard mask layer in argon sputtering technology and exhaustion layer 223.Preferably, the distance on described hard mask layer and exhaustion layer 223 to the second interlayer dielectric 222 surface is 30 ~ 100.Preferably, described nitride layer is used as the critical size reducing contact hole.Preferably, before formation photoresist layer 225, formation bottom anti-reflection layer 224 is also comprised.Bottom anti-reflection layer (BARC) can be divided into two large classes: the first kind is organic bottom antireflective layer, and this type of bottom anti-reflection layer has been widely used in IC processing procedure.Organic bottom antireflective layer generally comparatively has absorbability than the photoresistance covered on it, and its coating method adopts rotary coating mode.Equations of The Second Kind bottom anti-reflection layer is with the Inorganic bottom antireflective layer of chemical vapour deposition technique growth.It has the advantage that composition is adjustable and thickness is adjustable, so can eliminate the reflection on different high reverse--bias base material completely.This kind of bottom anti-reflection layer material has amorphous phase carbon film (a-C), silicon nitride (SiN), silicon oxynitride (SiO
xn
y) and titanium oxide (TiO) etc.
Next as shown in Figure 2 C, the figure Shape definition of contact hole is carried out.Adopt dry etching to implement main etching operation and form contact hole, contact hole etching stops at contact hole etching stopping layer 212.Described aluminum oxide film 211 is the nickel-silicon protective layer of self-alignment silicide layer 202, and is opened in argon sputtering technology.
Next as shown in Figure 2 D, photoresist layer 225 and bottom anti-reflection layer 224 is removed by photoresistance ashing (PhotoResistAshing) process, and remove a part of contact hole etching stopping layer 212 by lithographic method, form Metal Contact completely for making follow-up contact metal deposition.Then, please refer to Fig. 2 E, carry out argon sputtering technology, open the oxide layer 220 that metal gates autoxidation is formed.Finally, please refer to Fig. 2 F, carry out contact metal deposition, and by cmp smooth surface.Preferably, contact metal 230 adopts tungsten to deposit.
As shown in Figure 3, for making a kind of process chart of metal gate according to one embodiment of the invention.In step 301, semiconductor substrate is first provided.In step 302, the self-alignment silicide layer forming source electrode, drain electrode, metal gates on a semiconductor substrate and be formed on source electrode, drain electrode, metal gates surface.In step 303, described semiconductor base deposits one deck aluminum oxide film.In step 304, contact hole etching stopping layer is formed.In step 305, the first interlayer dielectric layer, the second interlayer dielectric layer, hard mask and exhaustion layer, bottom anti-reflection layer and photoresist layer is formed.Within step 306, the figure Shape definition of contact hole is carried out.In step 307, remove photoresist layer and bottom anti-reflection layer by photoresistance podzolic process, and remove a part of contact hole etching stopping layer by lithographic method.In step 308, carry out argon sputtering technology, remove the oxide layer that metal gates autoxidation is formed.In a step 309, carry out contact metal deposition, and by cmp smooth surface.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (10)
1. a manufacture method for metal gate, comprising:
Semiconductor base is provided;
Described semiconductor base is formed source electrode, drain electrode, metal gates and is formed at the self-alignment silicide layer on source electrode, drain electrode, metal gates surface;
Deposition of aluminium oxide film on described semiconductor base, using the protective layer as described self-alignment silicide layer;
Form contact hole etching stopping layer;
Form interlayer dielectric layer;
Form photoresist layer;
Carry out the figure Shape definition of contact hole;
Remove described photoresist layer and a part of contact hole etching stopping layer;
Carry out argon sputtering technology, remove the aluminum oxide film at described metal gates top and the oxide layer of autoxidation formation.
2. method according to claim 1, wherein said self-alignment silicide layer is nickel-silicon metal material.
3. method according to claim 1, wherein said aluminum oxide film film thickness is
4. method according to claim 1, wherein said contact hole etching stopping layer is silicon nitride material.
5. method according to claim 1, wherein said metal gates is metallic aluminium or aluminum titanium alloy material.
6. method according to claim 5, is characterized in that, inserts a silicon nitride layer in described interlayer dielectric layer, and this silicon nitride layer is hard mask layer in argon sputtering technology and exhaustion layer.
7. method according to claim 6, wherein said silicon nitride layer is used as the critical size reducing described contact hole.
8. method according to claim 1, is characterized in that, before formation photoresist layer, also comprise formation bottom anti-reflection layer.
9. method according to claim 8, is characterized in that, also comprises and remove described bottom anti-reflection layer after the described photoresist layer of removal.
10. method according to claim 1, is characterized in that, also comprises the step of contact metal deposition and cmp after carrying out argon sputtering technology.
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| CN201110256164.7A CN102969231B (en) | 2011-09-01 | 2011-09-01 | A kind of manufacture method of metal gate |
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| CN201110256164.7A CN102969231B (en) | 2011-09-01 | 2011-09-01 | A kind of manufacture method of metal gate |
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| CN102969231B true CN102969231B (en) | 2015-11-25 |
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| CN104217990A (en) * | 2013-06-04 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | Method for formation of contact hole |
| CN104347486B (en) * | 2013-08-06 | 2017-08-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of method for forming contact hole |
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| CN1670979A (en) * | 2004-03-18 | 2005-09-21 | 国际商业机器公司 | Phase change memory cell on silicon-on insulator substrate |
| CN101286452A (en) * | 2007-04-09 | 2008-10-15 | 联华电子股份有限公司 | Method for manufacturing metal-oxide-semiconductor transistor element |
| CN101286478A (en) * | 2007-04-11 | 2008-10-15 | 联华电子股份有限公司 | CMOS transistor and manufacturing method therefor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1670979A (en) * | 2004-03-18 | 2005-09-21 | 国际商业机器公司 | Phase change memory cell on silicon-on insulator substrate |
| CN101286452A (en) * | 2007-04-09 | 2008-10-15 | 联华电子股份有限公司 | Method for manufacturing metal-oxide-semiconductor transistor element |
| CN101286478A (en) * | 2007-04-11 | 2008-10-15 | 联华电子股份有限公司 | CMOS transistor and manufacturing method therefor |
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