CN102969023B - Electrifying circuit of eMMC (Embedded Multi Media Card) in electronic product - Google Patents
Electrifying circuit of eMMC (Embedded Multi Media Card) in electronic product Download PDFInfo
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- CN102969023B CN102969023B CN201210457786.0A CN201210457786A CN102969023B CN 102969023 B CN102969023 B CN 102969023B CN 201210457786 A CN201210457786 A CN 201210457786A CN 102969023 B CN102969023 B CN 102969023B
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- 238000005516 engineering process Methods 0.000 description 4
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Abstract
The invention relates to an electrifying circuit of an eMMC (Embedded Multi Media Card) in an electronic product. The electrifying circuit comprises a power supply control circuit and a discharge circuit. The power supply control circuit comprises a resistor R1, a resistor R2, a resistor R5, a triode Q3, a PMOS (P-channel Metal Oxide Semiconductor) tube Q1 and a capacitor C344. The discharge circuit comprises a resistor R3 and an NMOS (N-channel Metal Oxide Semiconductor) tube Q2. One end of the resistor R5 is connected to SYS_RESET, while the other end of the resistor R5 is connected to a base electrode of the triode Q3. The emitting electrode of the triode Q3 is grounded and the collecting electrode of the triode Q3 is connected with the resistor R2. The other end of the resistor R2 is connected with the resistor R1, the grid electrode of the PMOS tube Q1, the capacitor C344 and the grid electrode of the NMOS tube Q2 in the discharge circuit. According to the electrifying circuit of the eMMC in the electronic product provided by the invention, the eMMC Flash is reliably reset and charged, and discharges quickly after the system is powered off, therefore, the stability of the system is improved.
Description
[technical field]
The invention belongs to the circuit field of electronic product, specifically refer to that a kind of is the electrification circuit of eMMC in electronic product.
[background technology]
EMMC (Embedded MultiMediaCard) the embedded memory standard specification ordered by MMC association.A clear superiority of eMMC is integrated with a controller in a package, and it provides standard interface and manages flash memory, makes manufacturer can be absorbed in other parts of product development, and shorten the time releasing product to market.
Nand Flash internal memory is the one of Flash internal memory, the non-linear macroelement pattern of its inner employing, and the realization for solid-state large-capacity internal memory provides cheap effective solution.The advantages such as it is comparatively large that Nand flash storage has capacity, and speed of rewriting is fast, are applicable to the storage of mass data, thus in the industry cycle obtain and apply more and more widely, comprise the USB flash disk, panel computer etc. of digital camera, MP3 walkman memory card, compact.But the different brands due to Nand Flash chip comprises Samsung (Samsung), Toshiba (Toshiba), Hynix (Hynix) or Micron Technology (Micron) etc., and Nand Flash process technique updates fast, all can weed out the old and bring forth the new every year on average, so all need in use to redesign according to the product of every company and technical characteristic.This, for needing the consumer electronics releasing product fast, wastes the time beyond doubt, delays the construction cycle.Therefore, all wrap in the concept on a MCP as this control chip all storeies and management Nand Flash of eMMC, be in fashion gradually.
The eMMC of old design does not have special reset signal, and the reset of chip is that software write Reset instruction realizes by after powering on.This technology needs to restart after memory device programming program, or when the quick power-on and power-off of digital product, there will be and power on not exclusively, or the incomplete situation of charge discharging resisting, have influence on the normal use of electronic product.
Special reset signal has been added in newly-designed eMMC design.But the eMMC of new and old two kinds of designs on the market is now also in circulation, and this material to electronic product is replaced and created very large difficulty, likely occur that last consignment of product is normal, the abnormal problem of second batch product.
In view of this, the present inventor furthers investigate for the defect of prior art, and has this case to produce.
[summary of the invention]
Technical matters to be solved by this invention is the electrification circuit providing eMMC in a kind of electronic product, makes eMMC Flash obtain resetting reliably powering on, and rapid discharge after electricity under system, improve the stability of system.
The present invention solves the problems of the technologies described above by the following technical solutions:
Be an electrification circuit of eMMC in electronic product, comprise power control circuit and discharge circuit two parts;
Wherein power control circuit comprises resistance R1, resistance R2, resistance R5, triode Q3, PMOS Q1, electric capacity C344; Wherein resistance R5 one end is connected to SYS_RESET, the other end is connected to the base stage of triode Q3, the grounded emitter of triode Q3, the grid level of the NMOS tube Q2 in the other end difference contact resistance R1 of the collector contact resistance R2 of triode Q3, resistance R2, the grid of PMOS Q1, electric capacity C344, discharge circuit; Drain electrode contact resistance R1, electric capacity C344 and VCC30 respectively of PMOS Q1; The source electrode of PMOS Q1 connects resistance R3 and VCC_FLASH of discharge circuit;
Wherein discharge circuit comprises resistance R3 and NMOS tube Q2; Resistance R3 one end connects VCC_FLASH, and the other end connects the drain electrode of NMOS tube Q2, the source ground of NMOS tube Q2;
Wherein the model of triode Q3 model to be 3904, PMOS Q1 models be WPM2341, NMOS tube Q2 is WNM2016;
Wherein electric capacity C344 model is C0603.
The model of described resistance R1, R2, R3, R5 is R0603.
The package dimension of described triode Q3, PMOS Q1, NMOS tube Q2 is SOT23.
Described electric capacity C344 capacity is 0.1uF.
The invention has the advantages that: the invention enables the electrification reset of eMMC controlled, and allow eMMC can when quick power-on and power-off, internal charge of releasing, ensure that powering on of it is reliable, improve the stability of system, solve the material replacement problem run in volume production.
[accompanying drawing explanation]
The invention will be further described in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is electrical block diagram of the present invention.
[embodiment]
As shown in Figure 1, a kind of is the electrification circuit of eMMC in electronic product, comprises power control circuit and discharge circuit two parts;
Wherein power control circuit comprises resistance R1 (resistance 100K), resistance R2 (resistance 10K), resistance R5 (resistance 10K), triode Q3, PMOS Q1, electric capacity C344 (capacity 0.1uF); Wherein resistance R5 one end is connected to SYS_RESET, the other end is connected to the base stage of triode Q3, the grounded emitter of triode Q3, the grid level of the NMOS tube Q2 in the other end difference contact resistance R1 of the collector contact resistance R2 of triode Q3, resistance R2, the grid of PMOS Q1, electric capacity C344, discharge circuit; Drain electrode contact resistance R1, electric capacity C344 and VCC30 respectively of PMOS Q1; The source electrode of PMOS Q1 connects resistance R3 and VCC_FLASH of discharge circuit;
Wherein discharge circuit comprises resistance R3 (resistance 33 Ω) and NMOS tube Q2; Resistance R3 one end connects VCC_FLASH, and the other end connects the drain electrode of NMOS tube Q2, the source ground of NMOS tube Q2;
Wherein the model of triode Q3 model to be 3904, PMOS Q1 models be WPM2341, NMOS tube Q2 is WNM2016;
Wherein electric capacity C344 model is C0603.
The model of described resistance R1, R2, R3, R5 is R0603.
Base current when as long as the resistance of resistance R5 can ensure triode Q3 complete conducting, the resistance of general conventional 4.7K-47K; The resistance of resistance R3 can within 100 Ω, and the less electric discharge of resistance is faster; The resistance of resistance R1, R2 is variable, but will ensure that, when triode Q3 conducting, the voltage at resistance R1 two ends is greater than the on state threshold voltage of PMOS Q1, i.e. Vgs>2.5V.Again because Vgs is larger, NMOS tube Q2 conducting resistance resistance is less, and loss is also less, and considers power consumption, so resistance R1 can choose at 10K-100K, resistance R2 correspondence is chosen at 1K-10K.
The package dimension of described triode Q3, PMOS Q1, NMOS tube Q2 is SOT23.
Power control circuit controls power circuit conducting by PMOS Q1, produces control signal by resistance R5, triode Q3, is arranged the Vgs level controlling PMOS Q1 conducting by resistance R1, R2 bleeder circuit.
Discharge circuit NMOS tube Q2 controls charge discharge circuit turn-on, and resistance R3 is as the pull-up resistor of discharge circuit.
Before system electrification, SYS_RESET pin is low level, and triode Q3 ends, and now the grid of PMOS Q1 is because the high level that pull-up is thought of resistance R1, the Vgs=0v of PMOS Q1, so PMOS Q1 cut-off, eMMC does not power on.Again because now the grid of NMOS tube Q2 is high level, Vgs=3V, so NMOS tube Q2 conducting, forms discharge loop by resistance R1, eMMC internal charge of releasing.
When circuit powers on and starts steady operation, SYS_RESET exports high level, control triode Q3 conducting, resistance R1, R2 form dividing potential drop, the Vgs=-3V of PMOS Q1, so PMOS Q1 conducting, the grid of VCC_FLASH=VCC30, NMOS tube Q2 is low level, Vgs=0.3V, NMOS tube Q2 ends, and eMMC starts to power on.
Adopt after the solution of the present invention, eMMC Flash can obtain resetting reliably powering on, and can rapid discharge after electricity under system, improves the stability of system, solves the material replacement problem run in volume production.
The foregoing is only better enforcement use-case of the present invention, be not intended to limit protection model figure of the present invention.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. are the electrification circuits of eMMC in electronic product, it is characterized in that: comprise power control circuit and discharge circuit two parts;
Wherein power control circuit comprises resistance R1, resistance R2, resistance R5, triode Q3, PMOS Q1, electric capacity C344; Wherein resistance R5 one end is connected to SYS_RESET, the other end is connected to the base stage of triode Q3, the grounded emitter of triode Q3, the grid level of the NMOS tube Q2 in the other end difference contact resistance R1 of the collector contact resistance R2 of triode Q3, resistance R2, the grid of PMOS Q1, electric capacity C344, discharge circuit; Drain electrode contact resistance R1, electric capacity C344 and VCC30 respectively of PMOS Q1; The source electrode of PMOS Q1 connects resistance R3 and VCC_FLASH of discharge circuit;
Wherein discharge circuit comprises resistance R3 and NMOS tube Q2; Resistance R3 one end connects VCC_FLASH, and the other end connects the drain electrode of NMOS tube Q2, the source ground of NMOS tube Q2;
Wherein the model of triode Q3 model to be 3904, PMOS Q1 models be WPM2341, NMOS tube Q2 is WNM2016;
Wherein electric capacity C344 model is C0603.
2. a kind of is as claimed in claim 1 the electrification circuit of eMMC in electronic product, it is characterized in that: the model of described resistance R1, R2, R3, R5 is R0603.
3. a kind of is as claimed in claim 1 the electrification circuit of eMMC in electronic product, it is characterized in that: the package dimension of described triode Q3, PMOS Q1, NMOS tube Q2 is SOT23.
4. a kind of is as claimed in claim 1 the electrification circuit of eMMC in electronic product, it is characterized in that: described electric capacity C344 capacity is 0.1uF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210457786.0A CN102969023B (en) | 2012-11-14 | 2012-11-14 | Electrifying circuit of eMMC (Embedded Multi Media Card) in electronic product |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210457786.0A CN102969023B (en) | 2012-11-14 | 2012-11-14 | Electrifying circuit of eMMC (Embedded Multi Media Card) in electronic product |
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| CN102969023A CN102969023A (en) | 2013-03-13 |
| CN102969023B true CN102969023B (en) | 2015-06-17 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106374910A (en) * | 2016-09-30 | 2017-02-01 | 深圳市新国都支付技术有限公司 | Electrification/de-electrification and discharge control circuit and method for function module |
| CN111313674A (en) * | 2019-11-06 | 2020-06-19 | 北京比特大陆科技有限公司 | Power-on control circuit and electronic equipment with same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102111136A (en) * | 2011-01-28 | 2011-06-29 | 钜泉光电科技(上海)股份有限公司 | Chip power-on reset circuit and method thereof |
| CN102761322A (en) * | 2011-04-28 | 2012-10-31 | 飞兆半导体公司 | Power-on reset circuit and reset method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100551074B1 (en) * | 2003-12-30 | 2006-02-10 | 주식회사 하이닉스반도체 | Power up circuit in semiconductor device |
| KR101221799B1 (en) * | 2005-11-21 | 2013-01-14 | 페어차일드코리아반도체 주식회사 | Current sensing circuit and boost converter including the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102111136A (en) * | 2011-01-28 | 2011-06-29 | 钜泉光电科技(上海)股份有限公司 | Chip power-on reset circuit and method thereof |
| CN102761322A (en) * | 2011-04-28 | 2012-10-31 | 飞兆半导体公司 | Power-on reset circuit and reset method thereof |
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| CN102969023A (en) | 2013-03-13 |
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Address after: 350000 Fuzhou Gulou District, Fujian, software Avenue, building 89, No. 18 Patentee after: FUZHOU ROCKCHIP ELECTRONICS Co.,Ltd. Address before: 350000 Fuzhou Gulou District, Fujian, software Avenue, building 89, No. 18 Patentee before: Fuzhou Rockchip Electronics Co.,Ltd. |
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Address after: 350000 building, No. 89, software Avenue, Gulou District, Fujian, Fuzhou 18, China Patentee after: Ruixin Microelectronics Co.,Ltd. Address before: 350000 building, No. 89, software Avenue, Gulou District, Fujian, Fuzhou 18, China Patentee before: FUZHOU ROCKCHIP ELECTRONICS Co.,Ltd. |
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Granted publication date: 20150617 |