CN102969023B - Electrifying circuit of eMMC (Embedded Multi Media Card) in electronic product - Google Patents
Electrifying circuit of eMMC (Embedded Multi Media Card) in electronic product Download PDFInfo
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Abstract
一种是电子产品中eMMC的上电电路,包括电源控制电路和放电电路两部分;其中电源控制电路包括电阻R1、电阻R2、电阻R5,三极管Q3、PMOS管Q1、电容C344;其中放电电路包括电阻R3和NMOS管Q2;其中电阻R5一端连接到SYS_RESET,另一端连接到三极管Q3的基极,三极管Q3的发射极接地,三极管Q3的集电极连接电阻R2,电阻R2的另一端分别连接电阻R1、PMOS管Q1的栅极、电容C344、放电电路中的NMOS管Q2的栅级。本发明使得eMMC Flash得到可靠的复位上电,并且在系统下电后快速放电,提高了系统的稳定性。
One is the power-on circuit of eMMC in electronic products, including power control circuit and discharge circuit; the power control circuit includes resistor R1, resistor R2, resistor R5, triode Q3, PMOS tube Q1, and capacitor C344; the discharge circuit includes Resistor R3 and NMOS transistor Q2; one end of resistor R5 is connected to SYS_RESET, the other end is connected to the base of transistor Q3, the emitter of transistor Q3 is grounded, the collector of transistor Q3 is connected to resistor R2, and the other end of resistor R2 is respectively connected to resistor R1 , the gate of the PMOS transistor Q1, the capacitor C344, and the gate of the NMOS transistor Q2 in the discharge circuit. The invention enables the eMMC Flash to be reliably reset and powered on, and is quickly discharged after the system is powered off, thereby improving the stability of the system.
Description
【技术领域】【Technical field】
本发明属于电子产品的电路领域,具体是指一种是电子产品中eMMC的上电电路。The invention belongs to the circuit field of electronic products, and specifically refers to a power-on circuit of eMMC in electronic products.
【背景技术】【Background technique】
eMMC(Embedded MultiMediaCard)为MMC协会所订立的内嵌式存储器标准规格。eMMC的一个明显优势是在封装中集成了一个控制器,它提供标准接口并管理闪存,使得厂商能专注于产品开发的其他部分,并缩短向市场推出产品的时间。eMMC (Embedded MultiMediaCard) is an embedded memory standard specification established by the MMC Association. A distinct advantage of eMMC is the integration of a controller in the package that provides a standard interface and manages the flash memory, freeing manufacturers to focus on other parts of product development and reducing time-to-market.
Nand Flash内存是Flash内存的一种,其内部采用非线性宏单元模式,为固态大容量内存的实现提供了廉价有效的解决方案。Nand Flash存储器具有容量较大,改写速度快等优点,适用于大量数据的存储,因而在业界得到了越来越广泛的应用,包括数码相机、MP3随身听记忆卡、体积小巧的U盘、平板电脑等。但由于Nand Flash芯片的不同品牌包括三星(Samsung)、东芝(Toshiba)、海力士(Hynix)或美光(Micron)等,而且Nand Flash制程技术更新换代快,平均每年都会推陈出新,所以在使用时都需要根据每家公司的产品和技术特性来重新设计。这对于需要快速推出产品的消费类电子来说,无疑是浪费了时间,延误了开发周期。因此,像eMMC这种把所有存储器和管理Nand Flash的控制芯片都包在一颗MCP上的概念,逐渐风行起来。Nand Flash memory is a kind of Flash memory, which uses a non-linear macro-cell mode inside, which provides a cheap and effective solution for the realization of solid-state large-capacity memory. Nand Flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data, so it has been more and more widely used in the industry, including digital cameras, MP3 walkman memory cards, small and exquisite U disks, and tablets. computer etc. However, since different brands of Nand Flash chips include Samsung, Toshiba, Hynix, or Micron, etc., and the Nand Flash process technology is updated quickly, and new ones are introduced every year on average, so when using Redesign is required according to each company's product and technical characteristics. For consumer electronics that need to launch products quickly, this is undoubtedly a waste of time and delays the development cycle. Therefore, the concept of encapsulating all memory and control chips for managing Nand Flash on one MCP like eMMC has gradually become popular.
旧设计的eMMC没有专门的复位信号,芯片的复位是通过上电后,软件写入Reset指令来实现的。该技术在存储设备烧写程序后需要重启的情况下,或是数码产品快速上下电的情况下,会出现上电不完全,或是电荷泄放不完全的情况,影响到电子产品的正常使用。The eMMC of the old design does not have a special reset signal. The reset of the chip is realized by writing the Reset command to the software after power-on. When this technology needs to be restarted after programming the storage device, or when digital products are powered on and off quickly, there will be incomplete power-on or incomplete charge discharge, which will affect the normal use of electronic products. .
新设计的eMMC设计中已经增加了专门的复位信号。但是现在市面上新旧两种设计的eMMC都还在流通,这对电子产品的物料替换产生了很大的困难,有可能出现上一批产品正常,第二批产品不正常的问题。A dedicated reset signal has been added to the newly designed eMMC design. However, both old and new designs of eMMC are still in circulation on the market, which creates great difficulties for the material replacement of electronic products. There may be a problem that the first batch of products is normal, but the second batch of products is not normal.
有鉴于此,本发明人针对现有技术的缺陷深入研究,并有本案产生。In view of this, the inventor has made in-depth research on the defects of the prior art, and this case has been produced.
【发明内容】【Content of invention】
本发明所要解决的技术问题在于提供一种电子产品中eMMC的上电电路,使得eMMC Flash得到可靠的复位上电,并且在系统下电后快速放电,提高了系统的稳定性。The technical problem to be solved by the present invention is to provide a power-on circuit for eMMC in electronic products, so that eMMC Flash can be reliably reset and powered on, and quickly discharged after the system is powered off, improving the stability of the system.
本发明采用以下技术方案解决上述技术问题:The present invention adopts the following technical solutions to solve the above-mentioned technical problems:
一种是电子产品中eMMC的上电电路,包括电源控制电路和放电电路两部分;One is the power-on circuit of eMMC in electronic products, including two parts: power control circuit and discharge circuit;
其中电源控制电路包括电阻R1、电阻R2、电阻R5,三极管Q3、PMOS管Q1、电容C344;其中电阻R5一端连接到SYS_RESET,另一端连接到三极管Q3的基极,三极管Q3的发射极接地,三极管Q3的集电极连接电阻R2,电阻R2的另一端分别连接电阻R1、PMOS管Q1的栅极、电容C344、放电电路中的NMOS管Q2的栅级;PMOS管Q1的漏极分别连接电阻R1、电容C344、以及VCC30;PMOS管Q1的源极连接放电电路的电阻R3、以及VCC_FLASH;The power supply control circuit includes resistor R1, resistor R2, resistor R5, transistor Q3, PMOS transistor Q1, and capacitor C344; one end of resistor R5 is connected to SYS_RESET, the other end is connected to the base of transistor Q3, the emitter of transistor Q3 is grounded, and the transistor The collector of Q3 is connected to the resistor R2, and the other end of the resistor R2 is respectively connected to the resistor R1, the gate of the PMOS transistor Q1, the capacitor C344, and the gate of the NMOS transistor Q2 in the discharge circuit; the drain of the PMOS transistor Q1 is respectively connected to the resistor R1, Capacitor C344, and VCC30; the source of the PMOS transistor Q1 is connected to the resistor R3 of the discharge circuit, and VCC_FLASH;
其中放电电路包括电阻R3和NMOS管Q2;电阻R3一端连接VCC_FLASH,另一端连接NMOS管Q2的漏极,NMOS管Q2的源极接地;The discharge circuit includes a resistor R3 and an NMOS transistor Q2; one end of the resistor R3 is connected to VCC_FLASH, the other end is connected to the drain of the NMOS transistor Q2, and the source of the NMOS transistor Q2 is grounded;
其中三极管Q3型号为3904,PMOS管Q1型号为WPM2341,NMOS管Q2的型号为WNM2016;Among them, the model of transistor Q3 is 3904, the model of PMOS tube Q1 is WPM2341, and the model of NMOS tube Q2 is WNM2016;
其中电容C344型号为C0603。The model of capacitor C344 is C0603.
所述电阻R1、R2、R3、R5的型号均为R0603。The models of the resistors R1, R2, R3 and R5 are all R0603.
所述三极管Q3、PMOS管Q1、NMOS管Q2的封装尺寸为SOT23。The packaging size of the transistor Q3, the PMOS transistor Q1 and the NMOS transistor Q2 is SOT23.
所述电容C344容量为0.1uF。The capacity of the capacitor C344 is 0.1uF.
本发明的优点在于:本发明使得eMMC的上电复位可控,并且让eMMC能在快速上下电的情况下,泄放内部电荷,保证它的上电可靠,提高了系统的稳定性,解决了量产中遇到的物料替换问题。The advantages of the present invention are: the present invention makes the power-on reset of the eMMC controllable, and allows the eMMC to discharge the internal charge in the case of fast power-on and power-off, so as to ensure its reliable power-on, improve the stability of the system, and solve the problem of Material replacement problems encountered in mass production.
【附图说明】【Description of drawings】
下面参照附图结合实施例对本发明作进一步的描述。The present invention will be further described below with reference to the accompanying drawings and embodiments.
图1是本发明电路结构示意图。Fig. 1 is a schematic diagram of the circuit structure of the present invention.
【具体实施方式】【Detailed ways】
如图1所示,一种是电子产品中eMMC的上电电路,包括电源控制电路和放电电路两部分;As shown in Figure 1, one is the power-on circuit of eMMC in electronic products, including two parts: power control circuit and discharge circuit;
其中电源控制电路包括电阻R1(阻值100K)、电阻R2(阻值10K)、电阻R5(阻值10K),三极管Q3、PMOS管Q1、电容C344(容量0.1uF);其中电阻R5一端连接到SYS_RESET,另一端连接到三极管Q3的基极,三极管Q3的发射极接地,三极管Q3的集电极连接电阻R2,电阻R2的另一端分别连接电阻R1、PMOS管Q1的栅极、电容C344、放电电路中的NMOS管Q2的栅级;PMOS管Q1的漏极分别连接电阻R1、电容C344、以及VCC30;PMOS管Q1的源极连接放电电路的电阻R3、以及VCC_FLASH;The power supply control circuit includes resistor R1 (resistance value 100K), resistor R2 (resistance value 10K), resistor R5 (resistance value 10K), transistor Q3, PMOS transistor Q1, capacitor C344 (capacity 0.1uF); one end of resistor R5 is connected to SYS_RESET, the other end is connected to the base of the transistor Q3, the emitter of the transistor Q3 is grounded, the collector of the transistor Q3 is connected to the resistor R2, and the other end of the resistor R2 is respectively connected to the resistor R1, the gate of the PMOS transistor Q1, the capacitor C344, and the discharge circuit The gate of the NMOS transistor Q2; the drain of the PMOS transistor Q1 is respectively connected to the resistor R1, the capacitor C344, and VCC30; the source of the PMOS transistor Q1 is connected to the resistor R3 of the discharge circuit and VCC_FLASH;
其中放电电路包括电阻R3(阻值33Ω)和NMOS管Q2;电阻R3一端连接VCC_FLASH,另一端连接NMOS管Q2的漏极,NMOS管Q2的源极接地;The discharge circuit includes a resistor R3 (resistance 33Ω) and an NMOS transistor Q2; one end of the resistor R3 is connected to VCC_FLASH, the other end is connected to the drain of the NMOS transistor Q2, and the source of the NMOS transistor Q2 is grounded;
其中三极管Q3型号为3904,PMOS管Q1型号为WPM2341,NMOS管Q2的型号为WNM2016;Among them, the model of transistor Q3 is 3904, the model of PMOS tube Q1 is WPM2341, and the model of NMOS tube Q2 is WNM2016;
其中电容C344型号为C0603。The model of capacitor C344 is C0603.
所述电阻R1、R2、R3、R5的型号均为R0603。The models of the resistors R1, R2, R3 and R5 are all R0603.
电阻R5的阻值只要能保证三极管Q3完全导通时的基极电流就行了,一般常用4.7K-47K的电阻;电阻R3的阻值可以在100Ω以内,阻值越小放电越快;电阻R1、R2的阻值可变,但要保证在三极管Q3导通时,电阻R1两端的电压要大于PMOS管Q1的导通阈值电压,即Vgs>2.5V。又因为Vgs越大,NMOS管Q2导通电阻电阻越小,损耗也越小,且考虑到功耗,所以电阻R1可以在10K-100K选取,电阻R2对应在1K-10K选取.The resistance value of the resistor R5 only needs to ensure the base current when the triode Q3 is fully turned on. Generally, a resistor of 4.7K-47K is commonly used; the resistance value of the resistor R3 can be within 100Ω, and the smaller the resistance value, the faster the discharge; the resistor R1 The resistance of R2 is variable, but it must be ensured that when the transistor Q3 is turned on, the voltage across the resistor R1 is greater than the turn-on threshold voltage of the PMOS transistor Q1, that is, Vgs>2.5V. And because the larger the Vgs, the smaller the on-resistance of the NMOS transistor Q2, the smaller the loss, and considering the power consumption, the resistor R1 can be selected from 10K-100K, and the resistor R2 can be selected from 1K-10K.
所述三极管Q3、PMOS管Q1、NMOS管Q2的封装尺寸为SOT23。The packaging size of the transistor Q3, the PMOS transistor Q1 and the NMOS transistor Q2 is SOT23.
电源控制电路由PMOS管Q1控制电源电路导通,由电阻R5、三极管Q3产生控制信号,由电阻R1、R2分压电路设置控制PMOS管Q1导通的Vgs电平。The power supply control circuit is controlled by the PMOS transistor Q1 to turn on the power supply circuit, the control signal is generated by the resistor R5 and the transistor Q3, and the Vgs level that controls the conduction of the PMOS transistor Q1 is set by the resistor R1 and R2 voltage divider circuit.
放电电路NMOS管Q2控制电荷放电电路导通,电阻R3做为放电电路的负载电阻。The NMOS transistor Q2 of the discharge circuit controls the conduction of the charge discharge circuit, and the resistor R3 is used as a load resistance of the discharge circuit.
在系统上电前,SYS_RESET引脚为低电平,三极管Q3截止,此时PMOS管Q1的栅极因为电阻R1的上拉所以为高电平,PMOS管Q1的Vgs=0v,所以PMOS管Q1截止,eMMC不上电。又因为此时NMOS管Q2的栅极为高电平,Vgs=3V,所以NMOS管Q2导通,通过电阻R1组成放电回路,泄放eMMC内部电荷。Before the system is powered on, the SYS_RESET pin is at a low level, and the transistor Q3 is cut off. At this time, the gate of the PMOS transistor Q1 is at a high level because of the pull-up of the resistor R1, and the Vgs of the PMOS transistor Q1=0v, so the PMOS transistor Q1 As a result, the eMMC is not powered on. And because the gate of the NMOS transistor Q2 is at a high level at this time, and Vgs=3V, the NMOS transistor Q2 is turned on, and a discharge circuit is formed through the resistor R1 to discharge the internal charge of the eMMC.
当电路上电并开始稳定工作时,SYS_RESET输出高电平,控制三极管Q3导通,电阻R1、R2形成分压,PMOS管Q1的Vgs=-3V,所以PMOS管Q1导通,VCC_FLASH=VCC30,NMOS管Q2的栅极为低电平,Vgs=0.3V,NMOS管Q2截止,eMMC开始上电。When the circuit is powered on and starts to work stably, SYS_RESET outputs a high level, controls the transistor Q3 to turn on, resistors R1 and R2 form a voltage divider, and the Vgs of the PMOS transistor Q1=-3V, so the PMOS transistor Q1 is turned on, VCC_FLASH=VCC30, The gate of the NMOS transistor Q2 is at a low level, Vgs=0.3V, the NMOS transistor Q2 is turned off, and the eMMC starts to be powered on.
采用本发明的方案后,eMMC Flash可以得到可靠的复位上电,并且能在系统下电后快速放电,提高了系统的稳定性,解决了量产中遇到的物料替换问题。After adopting the solution of the present invention, eMMC Flash can be reliably reset and powered on, and can be quickly discharged after the system is powered off, which improves the stability of the system and solves the problem of material replacement encountered in mass production.
以上所述仅为本发明的较佳实施用例而已,并非用于限定本发明的保护范图。凡在本发明的精神和原则之内,所作的任何修改、等同替换以及改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred implementation examples of the present invention, and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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Address after: 350000 building, No. 89, software Avenue, Gulou District, Fujian, Fuzhou 18, China Patentee after: Ruixin Microelectronics Co.,Ltd. Address before: 350000 building, No. 89, software Avenue, Gulou District, Fujian, Fuzhou 18, China Patentee before: FUZHOU ROCKCHIP ELECTRONICS Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150617 |
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CF01 | Termination of patent right due to non-payment of annual fee |