CN102959743B - Light emitting device and LED bulb - Google Patents
Light emitting device and LED bulb Download PDFInfo
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- CN102959743B CN102959743B CN201180030116.4A CN201180030116A CN102959743B CN 102959743 B CN102959743 B CN 102959743B CN 201180030116 A CN201180030116 A CN 201180030116A CN 102959743 B CN102959743 B CN 102959743B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Abstract
A light emitting device (1) according to an embodiment includes an LED module (4) and a cover member (5). The LED module (4) includes four or more ultraviolet or violet emitting LED chips (3) arranged on a substrate (2). A fluorescent film (6) is provided along the cover member (5) and spaced from the LED chips (3). Where the distance from the center of one LED chip (3) to that of another LED chip (3) positioned nearest thereto is represented by P, and the length of one side of the LED chips if the LED chips are square or the average length of the long side and the short side if the LED chips are rectangles is represented by L, the four or more LED chips (3) are arranged in a matrix satisfying the condition of 2.6L< = P< = 10L.
Description
Technical field
Embodiment of the present invention relates to light-emitting device and LED bulb.
Background technology
The light-emitting device of light-emitting diode light (LED) is used to be widely used in the lighting device such as backlight, signalling, various Switch, vehicle-mounted lamp, general lighting of liquid crystal indicator.Especially, the white luminous type LED (white led lamps) combined by LED and fluorophor gets most of the attention as using the substitute of the ligthing paraphernalia of incandescent lamp bulb, fluorescent lamp, and is carrying out its exploitation rapidly.As the bulb (being designated as LED bulb below) applying white led lamps, the known structure having such as following integration: namely, LED module is set being installed in the enclosed globe shade had on the matrix part of lamp socket, and the lighting circuit of LED chip is set in matrix part, wherein, described LED module comprises the multiple LED chips be arranged in a matrix.
The LED chip (blue led) of the coloured light that turns blue and the combination of yellow fluorophor (YAG fluorophor etc.) or the combination of launching the LED chip (ultraviolet or purple LED) of ultraviolet or purple light and the mixing phosphor (BGR or BYR fluorophor) of red-emitting phosphors, green or yellow fluorophor and red-emitting phosphors is applied in white led lamps.The white led lamps combined by blue led and yellow fluorophor has the feature easily guaranteeing brightness.On the other hand, the white led lamps combined by ultraviolet or purple LED and BGR or BYR fluorophor has the excellent feature of color rendering, and this color rendering is evaluated by average color rendering index (Ra) etc.
When using white led lamps to be used as the substitute of the ligthing paraphernalia using incandescent lamp bulb, fluorescent lamp, require that there is the size identical with existing ligthing paraphernalia.Because the white led lamps used as ligthing paraphernalia is restricted in shape, the shape therefore possessing the driving source of fluorophor and the LED module of LED chip is also restricted.In the white led lamps combined by blue led and yellow fluorophor, in order to realize the miniaturization of LED module, the increase of light quantity, usually can carry out highdensity configuration to LED chip.In the white led lamps combined by ultraviolet or purple LED and BGR or BYR fluorophor, the reason such as configuration shape, hermetically-sealed construction due to LED chip also can not get sufficient light quantity sometimes.Therefore, need a kind ofly can meet the white led lamps restriction in shape used as ligthing paraphernalia, the white led lamps that light quantity can be made to increase again.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 2005-005546 publication
Patent documentation 2: Japanese Patent Laid-Open 2009-170114 publication
Patent documentation 3: Japanese Patent Laid-Open 2008-117538 publication
Summary of the invention
Problem to be solved by this invention is to provide a kind of light-emitting device combined by ultraviolet or purple LED and fluorophor, and this device of giving out light can meet the restriction in shape of various lighting device, and light quantity can be made again to increase.
The covering member that the light-emitting device of execution mode comprises LED module and covers LED module.LED module comprises the transmitting ultraviolet of more than four of being configured on substrate or the LED chip of purple light.Be provided with fluorescent film separatedly along covering member and LED chip, this fluorescent film absorbs the ultraviolet penetrated from LED chip or purple light and sends visible ray.The LED chip of more than four has the shape of square or rectangular respectively.When by from the center of a LED chip to be present in proximal most position another LED chip center distance be set to P, be square by the shape of LED chip time the length on a limit or the shape of LED chip be the mean value of rectangle duration limit and minor face be set to L time, the LED chip of more than four is configured to rectangular, makes the condition meeting 2.6L≤P≤10L.
Embodiment
Below, be described with reference to the light-emitting device of accompanying drawing to execution mode.The figure of Fig. 1 and Fig. 2 to be the figure of the light-emitting device represented involved by execution mode 1, Fig. 3 and Fig. 4 be light-emitting device represented involved by execution mode 2.Light-emitting device 1 shown in these figure comprises: LED module 4, and this LED module 4 comprises configuration multiple transmitting ultraviolet on a substrate 2 or the LED chip 3 of purple light; And arrange on a substrate 2 to cover the covering member 5 of LED chip 3.Although can enumerate as the concrete example of light-emitting device 1 LED bulb described in detail hereinafter, light-emitting device is not limited to this.Light-emitting device 1 formation utilizes the various lighting devices such as the substitute of the ligthing paraphernalia of fluorescent lamp.
On the substrate 2 forming LED module 4, the transmitting ultraviolet of more than four or the LED chip 3 of purple light are installed.Launch in the LED chip 3 of ultraviolet or purple light and employ the light-emitting diodes such as InGaN class, GaN class, AlGaN class.The ultraviolet penetrated from LED chip 3 or the fluorescent film 6 that purple light is being arranged along covering member 5 are converted to visible ray.That is, the inner surface of covering member 5 is provided with fluorescent film 6 separatedly with LED chip 3, and this fluorescent film 6 absorbs the ultraviolet or purple light that penetrate from LED chip 3 and sends visible ray.In addition, in fluorescent film 6 outer surface that also can be arranged on covering member 5 or covering member 5.
Although fluorescent film 6 sends white light, be not limited to this, also can send the visible ray (from red light to blue light etc.) of other shades of colour.The illuminant colour of fluorescent film 6 is determined by the kind of fluorophor.Preferably, when with the LED chip 3 launching ultraviolet or purple light carry out combination obtain white light time, fluorescent film 6 comprises mixing phosphor (BGR or BYR fluorophor), and this mixing phosphor comprises blue emitting phophor, green or yellow fluorophor and red-emitting phosphors.Mixing phosphor also can comprise at least one fluorophor selected from Color Rendering Properties of Fluorescent and crimson fluorescent body or the fluorophor with other illuminant colour further.
The each fluorophor, the Color Rendering Properties of Fluorescent added as required in addition, crimson fluorescent body etc. that form above-mentioned BGR or BYR fluorophor are combined with from the ultraviolet of LED chip 3 or purple light, consider from the viewpoint such as colour temperature, color rendering (average color rendering index Ra etc.) of the white light obtained, preferably use fluorophor as follows.As blue emitting phophor, luminous peak wavelength is used to be the fluorophor of 430 ~ 460nm scope, the alkali earths chlorophosphate phosphor that the europium (Eu) that preferred use such as has composition shown in formula (1) activates.
General formula: (Sr
1-x-y-zba
xca
yeu
z)
5(PO
4)
3cl (1)
(in formula, x, y and z are the number of satisfied 0≤x < 0.5,0≤y < 0.1,0.005≤z < 0.1)
As green or yellow fluorophor, luminous peak wavelength is used to be the fluorophor of 490 ~ 580nm scope, the at least one that preferred use is selected from such as following fluorophor: namely, has the alkaline earth aluminate phosphor that the europium (Eu) of composition shown in formula (2) and manganese (Mn) activate; There is the alkali earths silicate phosphor that the europium (Eu) of composition shown in formula (3) and manganese (Mn) activate; The terres rares chlorate MClO 3 fluorescent substance that the cerium (Ce) with composition shown in formula (4) activates; The Sialon phosphor that the europium (Eu) with composition shown in formula (5) activates; And the Sialon phosphor that the europium (Eu) with composition shown in formula (6) activates.
General formula: (Ba
1-x-y-zsr
xca
yeu
z) (Mg
1-umn
u) Al
10o
17(2)
(in formula, x, y, z and u are the number of satisfied 0≤x < 0.2,0≤y < 0.1,0.005 < z < 0.5,0.1 < u < 0.5)
General formula: (Sr
1-x-y-zuba
xmg
yeu
zmn
u)
2siO
4(3)
(in formula, x, y, z and u are the number of satisfied 0.1≤x≤0.35,0.025≤y≤0.105,0.025≤z≤0.25,0.0005≤u≤0.02)
General formula: RE
3a
xal
5-x-yb
yo
12: Ce
z(4)
(in formula, RE represents at least one element selected from Y, Lu and Gd, A and B is paired element, (A, B) be (Mg, Si), (B, Sc), (B, In) any pair, x in, y and z are the number meeting x < 2, y < 2,0.9≤x/y≤1.1,0.05≤z≤0.5)
General formula: (Si, Al)
6(O, N)
8: Eu
x(5)
(in formula, x is the number of satisfied 0 < x < 0.3)
General formula: (Sr
1-xeu
x)
αsi
βal
γo
δn
ω(6)
(in formula, x, α, β, γ, δ and ω are the number of satisfied 0 < x < 1,0 < α≤3,12≤β≤14,2≤γ≤3.5,1≤δ≤3,20≤ω≤22)
As red-emitting phosphors, luminous peak wavelength is used to be the fluorophor of 580 ~ 630nm scope, the at least one that preferred use is selected from such as following fluorophor: namely, the lanthanum oxysulfide fluorophor that the europium (Eu) with composition shown in formula (7) activates; There is the yttrium oxide fluorescent body that the europium (Eu) of composition shown in formula (8) and bismuth (Bi) activate; The CASN fluorophor that the europium (Eu) with composition shown in formula (9) activates; And the Sialon phosphor that the europium (Eu) with composition shown in formula (10) activates.
General formula: (La
1-x-yeu
xm
y)
2o
2s (7)
(in formula, M represents at least one element selected from Sm, Ga, Sb and Sn, x and y is the number of satisfied 0.08≤x < 0.16,0.000001≤y < 0.003)
General formula: (Y
1-x-yeu
xbi
y)
2o
3(8)
(in formula, x and y is the number of satisfied 0.01≤x < 0.15,0.001≤y < 0.05)
General formula: (Ca
1-x-ysr
xeu
y) SiAlN
3(9)
(in formula, x and y is the number of satisfied 0≤x < 0.4,0 < y < 0.5)
General formula: (Sr
1-xeu
x)
αsi
βal
γo
δn
ω(10)
(in formula, x, α, β, γ, δ and ω are the number of satisfied 0 < x < 1,0 < α≤3,5≤β≤9,1≤γ≤5,0.5≤δ≤2,5≤ω≤15)
As Color Rendering Properties of Fluorescent, use luminous peak wavelength to be the fluorophor of 460 ~ 490nm scope, preferred use such as has the alkali earths silicate phosphor that the europium (Eu) of composition shown in formula (11) and manganese (Mn) activate.
General formula: (Ba
1-x-y-z-usr
xmg
yeu
zmn
u)
2siO
4(11)
(in formula, x, y, z and u are the number of satisfied 0.1≤x≤0.35,0.025≤y≤0.105,0.025≤z≤0.25,0.0005≤u≤0.02)
As crimson fluorescent body, luminous peak wavelength is used to be the fluorophor of 630 ~ 780nm scope, the fluogermanic acid magnesium fluorophor that the manganese (Mn) that preferred use such as has composition shown in formula (12) activates.
General formula: α MgO β MgF
2(Ge
1-xmn
x) O
2(12)
(in formula, α, β and x are the number of satisfied 3.0≤α≤4.0,0.4≤β≤0.6,0.001≤x≤0.5)
Illuminant colour etc. according to light-emitting device 1 suitably sets the ratio of each fluorophor forming mixing phosphor.Preferably, mixing phosphor comprises following each fluorophor that summation amount is 100 quality %: namely, the blue emitting phophor of 10 ~ 60 quality % scopes; The Color Rendering Properties of Fluorescent of 0 ~ 10 quality % scope; The green of 1 ~ 30 quality % scope or yellow fluorophor; The red-emitting phosphors of 30 ~ 90 quality % scopes; And 0 ~ 35 crimson fluorescent body of quality % scope.According to mixing phosphor, then can be obtained the large-scale white light that correlated colour temperature is 6500K ~ 2500K by identical fluorescent species.
Fluorescent film 6 such as can be formed by with under type, that is, mixed with adhesive resin etc. by the powder of mixing phosphor, and is coated on the inner surface of covering member 5 by this mixture (such as slurry), then carries out heating, solidifying.Preferably, when the driving source using the LED chip 3 of transmitting ultraviolet or purple light as fluorescent film 6, the ultraviolet leakage from covering member 5 is suppressed.Based on this point, preferably, the thickness of fluorescent film 6 is the scope of 80 ~ 800 μm.Thus, the amount of ultraviolet leaked from covering member 5 (ultraviolet energy) can be reduced to such as below 0.3mW/nm/lm.Preferred, the thickness of fluorescent film 6 is the scope of 150 ~ 600 μm.
Covering member 5 has dome shape as shown in Figures 1 to 4.But the shape of covering member 5 is not limited thereto, can according to various shapes of application such as the structure of light-emitting device 1, purposes.Preferably, covering member 5 to be the transmissivity of visible ray be more than 85%, the material with transparent or white body colour, formed by such as glass, resin etc.Thus, efficiently the white light etc. sent from fluorescent film 6 can be exported to device outside.Covering member 5 also can comprise the material absorbed ultraviolet or purple light (mainly ultraviolet light), or also can arrange the layer absorbed ultraviolet or purple light between covering member 5 and fluorescent film 6.
LED chip 3 can be the LED launching ultraviolet or purple light type (peak luminous wavelength is 360 ~ 440nm).Particularly preferably peak luminous wavelength is the scope of 370 ~ 415nm, and uses half amplitude of emission spectrum to be the LED chip 3 of 10 ~ 15nm.When using when above-mentioned LED chip 3 and the fluorescent film 6 that comprises above-mentioned mixing phosphor (BGR or BYR fluorophor, add Color Rendering Properties of Fluorescent, crimson fluorescent body further as required after the mixing phosphor that obtains) are combined, can not by the impact of the output bias of LED chip 3, obtain the white light that correlated colour temperature is stable, and the rate of finished products of light-emitting device 1 can be improved.
On the substrate 2 forming LED module 4, the LED chip 3 of more than four is configured to rectangular (lattice-like).LED chip 3 has the shape of square or rectangular.The LED chip 3 of more than four is not configured to linearity, but is configured to the rectangular of multiple row.As the configuration pattern of LED chip 3, lattice-shaped, staggered trellis etc. can be listed.Such as, as shown in Figure 5, LED chip 3 is configured to the lattice-shaped of more than two row two row on a substrate 2.Substrate 2 is provided with wiring pattern 7 and is formed series-parallel circuit to make the LED chip 3 of more than four.Wiring pattern 7 comprises: the first drafting department 7a be connected in series LED chip 3; And to the second pattern 7b that multiple row first drafting department 7a is connected in parallel.
The electrode being mixed with the LED chip 3 of lattice-shaped is connected in series via the metal lead wire (closing line) 8 such as the first drafting department 7a and Au lead-in wire of wiring pattern 7 respectively.Substrate 2 is formed with the row of multiple LED chip 3 be connected in series.Each row of the LED chip 3 be connected in series are connected in parallel respectively by the second drafting department 7b, and form series-parallel circuit.The serial number (columns), the number in parallel (line number) that form the LED chip 3 of series-parallel circuit are not particularly limited, and can carry out suitable setting according to the size etc. of the size of substrate 2, light-emitting device 1.
Internal quantum may reduce because of the Joule heat produced when driving LED chip 3, thus causes light output step-down.In order to the Thermal release that produces when being driven by LED chip 3 is efficiently to the outside of LED module 4, to suppress the reduction of LED chip 3 light output, preferably, the substrate 2 installing LED chip 3 is made up of the material that pyroconductivity is higher.And, due to substrate 2 is exposed to the ultraviolet or purple light sent from LED chip 3, therefore, preferably, even if substrate 2 also can not the material of variable color be formed by be exposed to for a long time under ultraviolet or purple light.As the constituent material of substrate 2 meeting above-mentioned condition, ceramic material, metal material can be listed.
Preferred use carborundum sintered body, silicon nitride sinter, aluminum nitride sintered product, alumina sintered body etc. are used as the ceramic component forming substrate 2.Preferred use aluminium sheet, copper coin etc. are used as the hardware forming substrate 2.When being made up of substrate 2 hardware, form insulating barrier on the surface of substrate (metal substrate) 2, and form wiring pattern 7 thereon.Preferably, the insulating barrier being formed at metallic substrate surfaces is also made up of insulating material ultraviolet or purple light to tolerance.As above-mentioned insulating barrier, superficial layer, surface-treated layer that the inorganic substances such as above-mentioned pottery, glass are formed can be listed, or the resin bed formed by silicones, fluorine-type resin, acrylic resin, cyclic olefine copolymer, polypropylene etc.Preferably, consider from viewpoints such as the tolerance to ultraviolet or purple light, insulating properties, reflectivity, costs, use alumina sintered body to be used as the constituent material of substrate 2.
As shown in Figures 1 to 4, in the light-emitting device 1 of present embodiment, fluorescent film 6 is arranged on the whole inner surface of covering member 5 in the mode separated with LED chip 3.Therefore, the whole fluorescent film 6 be arranged on the inner surface of covering member 5 carries out face luminescence, therefore can improve the light quantity of light-emitting device 1.In order to effectively make the above-mentioned whole fluorescent film 6 being arranged at covering member 5 inner surface carry out luminescence, need to make efficiently the ultraviolet that penetrates from multiple LED chip 3 or purple light to arrive whole fluorescent film 6.
When by from the center of a LED chip 3 to be present in proximal most position another LED chip 3 center distance be set to P, be square by the shape of LED chip 3 time the length on a limit or the shape of LED chip 3 be the mean value ((long limit+minor face)/2) of rectangle duration limit and minor face be set to L time, multiple LED chips 3 in the light-emitting device 1 of present embodiment are configured, make the condition meeting 2.6L≤P≤10L.As shown in Figure 5, when the street (distance between centers) on each row of LED chip 3 being set to P1, when the street (distance between centers) between each row of LED chip 3 is set to P2, configure multiple LED chip 3 on a substrate 2, street P1 and street P2 is made all to meet the condition of 2.6L≤P (P1, P2)≤10L.
By configuring multiple LED chip 3 and meeting above-mentioned condition, the interference of ultraviolet or the purple light penetrated from adjacent LED chip 3 can be suppressed.Therefore, the ultraviolet that penetrates from multiple LED chip 3 or purple light can be made efficiently to arrive the whole fluorescent film 6 being arranged on covering member 5 inner surface.Therefore, whole fluorescent film 6 effectively can be made to carry out face luminescence, therefore the light quantity of light-emitting device 1 can be improved.If any one interval in street P1, P2 of LED chip 3 is less than 2.6L, then the interference of light between adjacent LED chip 3 can increase, and therefore the luminous efficiency of fluorescent film 6 can decline.
Even if being configured LED chip 3 makes any one interval in street P1, P2 more than 10L, fluorescent film 6 light quantity also meets 2.6L≤P (P1 with street P1, P2, P2)≤10L condition time identical, can not expect that light quantity can improve further.On the contrary, increasing street P1, P2 can cause the size of the substrate 2 being configured with LED chip 3 to become large.Therefore, cause the manufacturing cost of LED module 4 to increase possibly, maybe can not meet light-emitting device 1 restriction in shape as ligthing paraphernalia etc.This is the main cause of the practicality reduction of the light-emitting device 1 causing the substitute being used as the ligthing paraphernalia using incandescent lamp bulb, fluorescent lamp.
Meet the LED module 4 of 2.6L≤P (P1, P2)≤10L condition according to the street P1 of multiple (more than four) LED chip 3 and street P2, the size of substrate 2 can be suppressed to become large, the luminous efficiency of fluorescent film 6 can be improved again.Preferably, configuration LED chip 3 is on a substrate 2 covered by transparent resin layer 9.Such as preferably use silicones, epoxy resin etc. in transparent resin layer 9, particularly preferably use the good silicones of uviolresistance.By covering LED chip 3 with transparent resin layer 9, the diffusion breadth of ultraviolet or the purple light penetrated from LED chip 3 can be improved and derive efficiency, therefore the luminous efficiency of fluorescent film 6 can be improved further.
But if utilize transparent resin layer 9 to seal in the lump to configuration multiple LED chips 3 on a substrate 2, then ultraviolet or purple light may interfere in transparent resin layer 9, or the derivation efficiency of ultraviolet or purple light can decline on the contrary.Therefore, preferably, the LED chip 3 of each row is such as sealed to linearity by transparent resin layer 9 as shown in Figures 1 and 2, or is separately sealed by each LED chip 3 as shown in Figures 3 and 4.By multiple LED chip 3 being sealed to linearity or separately being sealed by each LED chip 3, ultraviolet or purple light can be suppressed to interfere in transparent resin layer 9, improve the derivation efficiency of ultraviolet or purple light.Therefore, the luminous efficiency of fluorescent film 6 can be improved further.
Preferably, when only considering the derivation efficiency of ultraviolet or purple light, as shown in Figures 3 and 4, each LED chip 3 is separately sealed.But, according to the difference of the street of LED chip 3, LED chip 3 may be difficult to separately seal, also may cause the rising etc. of manufacturing cost.In these cases, preferably, as shown in Figures 1 and 2, multiple LED chip 3 is sealed to linearity.In Fig. 1 and Fig. 2, the transparent resin layer 9 that each row of LED chip 3 are formed linearity respectively seals.According to above-mentioned transparent resin layer 9, and to compared with being configured to when rectangular LED chip 3 seals in the lump, the derivation efficiency of ultraviolet or purple light can be improved.
As mentioned above, street P1 and the street P2 of configuration multiple (more than four) LED chip 3 on a substrate 2 meet 2.6L≤P (P1, the condition of P2)≤10L, and utilize transparent resin layer 9 plural LED chip 3 be sealed to linearity or separately sealed by each LED chip 3 further, according to the LED module 4 obtained therefrom, the size of substrate 2 can be suppressed to become large, the luminous efficiency of fluorescent film 6 can be improved again.Therefore, by using above-mentioned LED module 4, the substitute restriction in shape of the ligthing paraphernalia as existing use incandescent lamp bulb, fluorescent lamp can be met, a kind of light-emitting device 1 increasing light quantity can be provided again.
And in the light-emitting device 1 of present embodiment, make the whole fluorescent film 6 be arranged on the inner surface of covering member 5 carry out face luminescence, therefore white light etc. are luminous from fluorescent film 6 to comprehensive diffusion.And, because the light sent by means of only fluorescent film 6 is to carry out luminescence, local luminance therefore can be suppressed unequal.Thus, can obtain there is no high light, even and soft white light.That is, the dazzle of light-emitting device 1 can significantly be reduced.In addition, when using launch ultraviolet or purple light LED chip 3, due to various fluorophor can be utilized to form fluorescent film 6, the color rendering of white light can therefore be improved.Specifically, correlated colour temperature can easily be obtained at below 6500K and the white light of average color rendering index Ra more than 85.
And, by arranging fluorescent film 6 at the inner surface of covering member 5, the light distribution angle of light-emitting device 1 can be improved, can also suppress cause brightness to be passed through in time by the temperature rising etc. of fluorescent film 6 and decline.That is, because the whole surface of white light from fluorescent film 6 is spread towards periphery, the diffusion breadth of the white light at the directive device back side etc. therefore can be made to become large.Therefore, the light distribution angle of light-emitting device 1 can more effectively be increased.And, by fluorescent film 6 and LED chip 3 being arranged on separatedly the inner surface of covering member 5, even if when the temperature of LED chip 3 rises, also can the temperature rising of Fluorophotometry film 6.Therefore, can to light-emitting device 1 light period brightness in time through and decline situation suppress.
Then, with reference to Fig. 6 and Fig. 7, the LED bulb involved by execution mode 3 is described.LED bulb 11 in these figures comprises: LED module 12; Be provided with the matrix part 13 of LED module 12; Be arranged on matrix part 13 to cover the enclosed globe shade 14 of LED module 12; The socket (not shown) of the bottom of matrix part 13 is arranged on across insulating component etc.; And the lighting circuit (not shown) be arranged in matrix part 13.
Identical with the light-emitting device 1 of above-mentioned execution mode 1 and execution mode 2, LED module 12 comprises installation multiple transmitting ultraviolet on a substrate 2 or the LED chip 3 of purple light.In lattice-shaped, ground configures on a substrate 2 multiple LED chip 3 as mentioned above.Configuration shape, the configuration space of LED chip 3 are identical with above-mentioned execution mode 1 and execution mode 2.On the side or bottom surface of LED module 12, lead to abridged wiring in figure, this wiring is electrically connected with the lighting circuit be arranged in matrix part 3 (not shown).Utilize the direct voltage applied via lighting circuit to light LED chip 3.
LED module 12 is arranged on matrix part 13, and this matrix part 13 comprises abridged lighting circuit and the socket etc. be attached thereto in figure.Preferably, when arranging LED module 12 on matrix part 13, when utilizing the lower material of the toughness such as alumina sintered body to form substrate 2, the installation unit that can suppress the breach of substrate 2 or cracking etc. is preferably applied.Specifically, preferably, utilize resinous screw, or utilize metal screw across resinous packing ring, LED module 12 (substrate 2) is installed on matrix part 13.Also the resinous sheet material, formed body etc. can applied substrate 2 entirety presses replaces resinous packing ring.Preferably, screw, sept (packing ring, sheet material etc.) are formed the resin material that ultraviolet or purple light have tolerance by silicones, fluorine-type resin, acrylic resin, cyclic olefine copolymer, polypropylene etc.
The inner surface of enclosed globe shade 14 is provided with fluorescent film 15, and this fluorescent film 15 absorbs the ultraviolet penetrated from LED chip 3 or purple light and sends white light.For the fluorophor forming fluorescent film 15, identical with above-mentioned execution mode 1 and execution mode 2, carry out selecting to obtain desired white light.The light (not comprising the light penetrated from LED chip 3) that fluorescent film 15 can only utilize these fluorophor to send obtains white light etc.Enclosed globe shade 14 can apply the enclosed globe shade like that as shown in FIG. 6 and 7 with dome shape, but is not limited in this, also can have eggplant shape etc.Preferably, enclosed globe shade 14 is formed by with the material forming material identical of above-mentioned covering member 5.Enclosed globe shade 14 has the size identical with such as incandescent lamp bulb.
Fluorescent film 15 in the LED bulb 11 of present embodiment and LED chip 3 are arranged on the inner surface of enclosed globe shade 14 separatedly.In addition, the LED chip 3 forming LED module 12 is configured, make its condition meeting 2.6L≤P≤10L on aforesaid substrate 2 (P be from the center of a LED chip 3 to be present in proximal most position another LED chip 3 center distance, the length on a limit that L is the shape of LED chip 3 when being square or the shape of LED chip 3 are the mean value ((long limit+minor face)/2) of rectangle duration limit and minor face).And, utilize the sealing resin layer 9 identical with above-mentioned execution mode 1 and execution mode 2 to seal multiple LED chip 3.Thus, the luminous efficiency of fluorescent film 15 can be improved, therefore the light quantity of LED bulb 11 can be increased.
In the same manner as the light-emitting device 1 of above-mentioned execution mode, the raisings such as the color rendering of the white light sent from LED bulb 11 can be made.Specifically, correlated colour temperature can easily be obtained at below 6500K and average color rendering index (Ra) white light more than 85.By obtaining above-mentioned white light, the practicality as the LED bulb 11 of incandescent lamp bulb substitute can be made to improve.And, the light distribution angle of LED bulb 11 can be increased, and the situation that brightness can be caused the temperature rising etc. by fluorescent film 15 to pass through in time and reduce suppresses.
That is, the LED bulb 11 of present embodiment makes the whole fluorescent film 15 being arranged on enclosed globe shade 14 inner surface carry out face luminescence, and therefore white light is from fluorescent film 15 to comprehensive diffusion.Thus, the diffusion breadth of the white light at the directive bulb back side can be made to become large.Therefore, the light distribution angle of the white light of LED bulb 11 can be effectively made to increase.LED bulb 11 according to the present embodiment, can make light distribution angle reach such as more than 200 degree or 200 degree.In addition, owing to there being sufficient distance between fluorescent film 15 and LED chip 3, even if therefore when LED bulb 11 is lighted continuously the temperature of LED chip 3 rise, the temperature of fluorescent film 15 also only can rise to such as 60 ° of about C.Therefore, can to LED bulb 11 light period brightness in time through and decline situation suppress.
Embodiment
Next, carry out describing to specific embodiment and evaluation result thereof.
(embodiment 1 ~ 4)
First, in profile be 30 × 30mm aluminum oxide substrate on, respectively with street P1, the P2 shown in table 1, it is in parallel by chip form to be that the LED chip of 0.4 × 0.4mm is configured to 5 series connection × 5.The emission wavelength of LED chip is as shown in table 1.Then, as shown in Figure 1, transparent silicones is utilized separately to seal the chip alignment be connected in series respectively.The LED chip of each chip alignment is sealed to linearity by silicones.By arranging the covering member by being hereinafter described formed with fluorescent film on an internal surface on above-mentioned LED module respectively, produce the white light emitting device of embodiment 1 ~ 4.These white light emitting devices are used for hereinafter described evaluating characteristics.
Formation fluorescent film as described below.First, alkali earths the chlorophosphate ((Sr that Eu activates is prepared
0.604ba
0.394eu
0.002) 5
(pO
4)
3cl) fluorophor is as blue emitting phophor, prepares alkali earths the silicate ((Sr that Eu and Mn activates
0.675ba
0.25mg
0.0235eu
0.05mn
0.0015)
2siO
4) fluorophor as green or yellow fluorophor, prepare the lanthanum oxysulfide ((La that Eu activates
0.9eu
0.1)
2o
2s) fluorophor is as red-emitting phosphors.After being mixed with the ratio of blue emitting phophor 27 quality %, green or yellow fluorophor 4 quality %, red-emitting phosphors 69 quality % by these fluorophor, it is made to be distributed in silicones as fluorophor paste (fluorophor ratio: 65 quality %).This fluorophor paste is coated on the inner side of the covering member of Merlon, utilizes baking oven etc. to heat-treat afterwards, make the curing of coating of fluorophor paste thus.The thickness of fluorescent film is decided to be 0.2mm.
(comparative example 1 ~ 5)
Except street P1, the P2 of the LED chip by 5 series connection × 5 parallel connections are altered to except the value shown in table 1 respectively, other is identical with embodiment 1, makes white light emitting device.These white light emitting devices are used for hereinafter described evaluating characteristics.
[table 1]
The driving voltage of LED chip as shown in table 2 is applied to the white light emitting device of embodiment 1 ~ 4 and comparative example 1 ~ 5 and drive current makes it luminous, and the light output of the white light sent from each white light emitting device, total light flux, correlated colour temperature are measured.The SLMS total light flux Analytical system that these characteristics are manufactured by Lan Fei Optical Co., Ltd measures.These results are as shown in table 2.
[table 2]
Known from table 2, relative to the value (4mm) in embodiment 1, street P1, P2 being set to respectively square chips one edge lengths (0.4mm) 10 times, although interval P2 is narrower for embodiment 2 ~ 4 chips, but because each street P2 is more than 2.6 times of the chip length of side, therefore the difference of light output and total light flux controls within 5%.On the other hand, in comparative example 1,2, light output and total light flux have dropped about 25% respectively relative to embodiment 1.This is because 2.6 times of the not enough chip length of side (0.4mm) of street P2, therefore the interference grow of light from the injection of adjacent LED chip, thus make the derivation decrease in efficiency of the light from LED chip.
In comparative example 3,4, light output and total light flux have dropped about 50% respectively relative to embodiment 1.This is because 2.6 times of the equal not enough chip length of side (0.4mm) of street P1, P2, therefore from the remarkable grow of interference of light of adjacent LED chip injection, thus the derivation efficiency of the light from LED chip is declined to a great extent.Street P2 is expanded to the value (4.5mm) exceeding the chip length of side (0.4mm) 10 times by comparative example 5, and result obtains the light output substantially identical with embodiment 1 and total light flux.But light output, total light flux can not improve further, substrate can be made on the contrary to become large thus cause cost increase, but also the compatibility reduction etc. to the various plant bulks as LED module can be caused.
(embodiment 5 ~ 8)
First, in profile be 35 × 35mm aluminum oxide substrate on, respectively with street P1, the P2 shown in table 3, it is in parallel by chip form to be that the LED chip of 0.6 × 0.6mm is configured to 4 series connection × 4.The emission wavelength of LED chip is as shown in table 3.Then, as shown in Figure 3, transparent silicones is utilized separately to seal each LED chip respectively.By arranging the covering member by being hereinafter described formed with fluorescent film on an internal surface on above-mentioned LED module respectively, produce the white light emitting device of embodiment 5 ~ 8.The mensuration identical with embodiment 1 is carried out to the characteristic of these white light emitting devices.Table 4 illustrates its result.
Formation fluorescent film as described below.First, alkali earths the chlorophosphate ((Sr that Eu activates is prepared
0.604ba
0.394eu
0.002)
5(PO
4)
3cl) fluorophor is as blue emitting phophor, prepares alkali earths the silicate ((Sr that Eu and Mn activates
0.675ba
0.25mg
0.0235eu
0.05mn
0.0015)
2siO
4) fluorophor as green or yellow fluorophor, prepare the lanthanum oxysulfide ((La that Eu activates
0.9eu
0.1)
2o
2s) fluorophor is as red-emitting phosphors.After being mixed with the ratio of blue emitting phophor 52 quality %, green or yellow fluorophor 3 quality %, red-emitting phosphors 45 quality % by these fluorophor, it is made to be distributed in silicones as fluorophor paste (fluorophor ratio: 60 quality %).This fluorophor paste is coated on the inner side of the covering member of Merlon, utilizes baking oven etc. to heat-treat afterwards, make the curing of coating of fluorophor paste thus.The thickness of fluorescent film is decided to be 0.2mm.
(comparative example 6 ~ 10)
Except street P1, the P2 of the LED chip by 4 series connection × 4 parallel connections are altered to except the value shown in table 1 respectively, other is identical with embodiment 5, makes white light emitting device.The mensuration identical with embodiment 5 is carried out to the characteristic of these white light emitting devices.Table 4 illustrates its result.
[table 3]
[table 4]
Known from table 4, relative to the value (6mm) in embodiment 5, street P1, P2 being set to respectively square chips one edge lengths (0.6mm) 10 times, although interval P2 is narrower for embodiment 6 ~ 8 chips, but because each street P2 is more than 2.6 times of the chip length of side, therefore the difference of light output and total light flux controls within 3%.On the other hand, in comparative example 6,7, light output and total light flux have dropped about 25% respectively relative to embodiment 5.This is because 2.6 times of the not enough chip length of side (0.6mm) of street P2, therefore the interference grow of light from the injection of adjacent LED chip, thus make the derivation decrease in efficiency of the light from LED chip.
In comparative example 8,9, light output and total light flux have dropped 45 ~ 60% respectively relative to embodiment 5.This is because 2.6 times of the equal not enough chip length of side (0.6mm) of street P1, P2, therefore from the remarkable grow of interference of light of adjacent LED chip injection, thus the derivation efficiency of the light from LED chip is declined to a great extent.Street P2 is expanded to the value (7mm) exceeding the chip length of side (0.6mm) 10 times by comparative example 10, and result obtains the light output substantially identical with embodiment 5 and total light flux.But light output, total light flux can not improve further, substrate can be made on the contrary to become large thus cause cost increase, but also the compatibility reduction etc. to the various plant bulks as LED module can be caused.
(embodiment 9 ~ 12)
First, in profile be 25 × 25mm aluminum oxide substrate on, respectively with street P1, the P2 shown in table 5, it is in parallel by chip form to be that the LED chip of 0.7 × 0.25mm (mean value of long limit and minor face: 0.475mm) is configured to 5 series connection × 5.The emission wavelength of LED chip is as shown in table 5.Then, as shown in Figure 6, transparent silicones is utilized separately to seal the chip alignment be connected in series respectively.Above-mentioned LED module is fixed on matrix part (radiator), and respectively by being arranged on LED module by the enclosed globe shade being hereinafter described formed with fluorescent film on an internal surface, produces the LED bulb of embodiment 9 ~ 12 thus.The mensuration identical with embodiment 1 is carried out to the characteristic of these LED bulb.Table 6 illustrates its result.
Formation fluorescent film as described below.First, alkali earths the chlorophosphate ((Sr that Eu activates is prepared
0.604ba
0.394eu
0.002)
5(PO
4)
3cl) fluorophor is as blue emitting phophor, prepares alkali earths the silicate ((Sr that Eu and Mn activates
0.675ba
0.25mg
0.0235eu
0.05mn
0.0015)
2siO
4) fluorophor as green or yellow fluorophor, prepare the lanthanum oxysulfide ((La that Eu activates
0.9eu
0.1)
2o
2s) fluorophor is as red-emitting phosphors.After being mixed with the ratio of blue emitting phophor 63 quality %, green or yellow fluorophor 2 quality %, red-emitting phosphors 35 quality % by these fluorophor, it is made to be distributed in silicones as fluorophor paste (fluorophor ratio: 60 quality %).This fluorophor paste is coated on the inner side of the enclosed globe shade of Merlon, utilizes baking oven etc. to heat-treat afterwards, make the curing of coating of fluorophor paste thus.The thickness of fluorescent film is decided to be 0.2mm.
(comparative example 11 ~ 15)
Except street P1, the P2 of the LED chip by 5 series connection × 5 parallel connections are altered to except the value shown in table 1 respectively, other is identical with embodiment 9, makes LED bulb.The mensuration identical with embodiment 9 is carried out to the characteristic of these LED bulb.Table 6 illustrates its result.
[table 5]
[table 6]
Known from table 6, relative to the value (4.5mm) of mean value (0.475mm) about 10 times in embodiment 9, street P1, P2 being set to respectively the long limit of oblong chips and minor face, although interval P2 is narrower for embodiment 10 ~ 12 chips, but because each street P2 is more than 2.6 times of chip length of side mean value, therefore the difference of light output and total light flux controls within 5%.On the other hand, in comparative example 11,12, light output and total light flux have dropped about 20 ~ 30% respectively relative to embodiment 9.This is because 2.6 times of the mean value (0.475mm) on the not enough chip limit of street P2, therefore the interference grow of light from the injection of adjacent LED chip, thus make the derivation decrease in efficiency of the light from LED chip.
In comparative example 13,14, light output and total light flux have dropped 50 ~ 60% respectively relative to embodiment 9.This is because 2.6 times of the mean value on the equal not enough chip limit of street P1, P2, therefore from the remarkable grow of interference of light of adjacent LED chip injection, thus the derivation efficiency of the light from LED chip is declined to a great extent.Street P2 is expanded to the value (5.5mm) of 10 times of the mean value exceeding chip limit by comparative example 15, and result obtains the light output substantially identical with embodiment 9 and total light flux.But light output, total light flux can not improve further, substrate can be made on the contrary to become large thus cause cost increase, but also the compatibility reduction etc. to the various plant bulks as LED module can be caused.
In addition, although be illustrated several execution mode of the present invention, these execution modes are just exemplarily pointed out, and do not limit the intention of invention scope.These new execution modes can be implemented in other various modes, can carry out various omission, displacement, change in the scope not departing from invention main points.These execution modes and its distortion are included in scope of invention and main points, and comprise in the scope of invention and the equalization thereof recorded in detail in the claims.
Accompanying drawing explanation
Fig. 1 is the vertical view of the light-emitting device represented involved by execution mode 1.
Fig. 2 is the cutaway view of the light-emitting device shown in Fig. 1.
Fig. 3 is the vertical view of the light-emitting device represented involved by execution mode 2.
Fig. 4 is the cutaway view of the light-emitting device shown in Fig. 3.
Fig. 5 is the vertical view of the LED module represented in the light-emitting device of execution mode.
Fig. 6 is the vertical view of the LED bulb represented involved by execution mode 3.
Fig. 7 is the figure representing the LED bulb shown in Fig. 6 with part section.
Claims (10)
1. a light-emitting device, comprising:
LED module, this LED module comprises the LED chip of substrate and the configuration transmitting ultraviolet of more than four on the substrate or purple light, and the serial number that plural described LED chip carries out being connected in series and obtains by the LED chip formation of described more than four is the above series-parallel circuits of two row;
Covering member, this covering member covers described LED module; And
Fluorescent film, this fluorescent film is arranged separatedly along described covering member and described LED chip, comprise blue emitting phophor, green or yellow fluorophor and red-emitting phosphors, and the ultraviolet penetrated from described LED chip or purple light are absorbed and sends white light, the feature of described light-emitting device is
The LED chip of described more than four has the shape of square or rectangular respectively, and be configured to rectangular, make to meet 2.6L≤P≤10L condition (P for from the center of a described LED chip to be present in proximal most position another described in LED chip center distance, under the shape of described LED chip is foursquare situation, L is the length on a limit, under the shape of described LED chip is rectangular situation, L is the mean value of long limit and minor face), and, the LED chip of described more than four cover by transparent resin layer, the described LED chip of each row be connected in series is sealed to linearity by described transparent resin layer respectively.
2. light-emitting device as claimed in claim 1, is characterized in that,
The described ultraviolet penetrated from described LED chip or the peak luminous wavelength of purple light are in the scope of more than 370nm below 415nm.
3. light-emitting device as claimed in claim 1, is characterized in that,
Described blue emitting phophor comprise have by
General formula: (Sr
1-x-y-zba
xca
yeu
z)
5(PO
4)
3cl
(in formula, x, y and z are the number of satisfied 0≤x < 0.5,0≤y < 0.1,0.005≤z < 0.1)
The europkium-activated alkali earths chlorophosphate phosphor of the composition represented,
Described green or yellow fluorophor comprise at least one fluorophor being selected from following fluorophor:
Have by general formula: (Ba
1-x-y-zsr
xca
yeu
z) (Mg
1-umn
u) Al
10o
17
(in formula, x, y, z and u are the number of satisfied 0≤x < 0.2,0≤y < 0.1,0.005 < z < 0.5,0.1 < u < 0.5)
The europium of the composition represented and manganese activated alkaline earth aluminate phosphor;
Have by general formula: (Sr
1-x-y-z-uba
xmg
yeu
zmn
u)
2siO
4
(in formula, x, y, z and u are the number of satisfied 0.1≤x≤0.35,0.025≤y≤0.105,0.025≤z≤0.25,0.0005≤u≤0.02)
The europium of the composition represented and manganese activated alkali earths silicate phosphor;
Have by general formula: RE
3a
xal
5-x-yb
yo
12: Ce
z
(in formula, RE represents at least one element selected from Y, Lu and Gd, A and B is paired element, (A, B) be (Mg, Si), (B, Sc), (B, In) any pair, x in, y and z are the number meeting x < 2, y < 2,0.9≤x/y≤1.1,0.05≤z≤0.5)
The rare earth aluminate fluorophor of the cerium activation of the composition represented,
Have by general formula: (Si, Al)
6(O, N)
8: Eu
x
(in formula, x is the number of satisfied 0 < x < 0.3)
The europkium-activated Sialon phosphor of the composition represented; And
Have by general formula: (Sr
1-xeu
x)
αsi
βal
γo
δn
ω
(in formula, x, α, β, γ, δ and ω are the number of satisfied 0 < x < 1,0 < α≤3,12≤β≤14,2≤γ≤3.5,1≤δ≤3,20≤ω≤22)
The europkium-activated Sialon phosphor of the composition represented,
Described red-emitting phosphors comprises at least one fluorophor being selected from following fluorophor:
Have by general formula: (La
1-x-yeu
xm
y)
2o
2s
(in formula, M represents at least one element selected from Sm, Ga, Sb and Sn, x and y is the number of satisfied 0.08≤x < 0.16,0.000001≤y < 0.003)
The europkium-activated lanthanum oxysulfide fluorophor of the composition represented;
Have by general formula: (Y
1-x-yeu
xbi
y)
2o
3
(in formula, x and y is the number of satisfied 0.01≤x < 0.15,0.001≤y < 0.05)
The yttrium oxide fluorescent body that the europium of the composition represented and bismuth activate;
Have by general formula: (Ca
1-x-ysr
xeu
y) SiAlN
3
(in formula, x and y is the number of satisfied 0≤x < 0.4,0 < y < 0.5)
The europkium-activated CASN fluorophor of the composition represented; And
Have by general formula: (Sr
1-xeu
x)
αsi
βal
γo
δn
ω
(in formula, x, α, β, γ, δ and ω are the number of satisfied 0 < x < 1,0 < α≤3,5≤β≤9,1≤γ≤5,0.5≤δ≤2,5≤ω≤15)
The europkium-activated Sialon phosphor of the composition represented.
4. light-emitting device as claimed in claim 1, is characterized in that,
Described fluorescent film also comprises at least one fluorophor selected from Color Rendering Properties of Fluorescent and crimson fluorescent body.
5. light-emitting device as claimed in claim 4, is characterized in that,
Described Color Rendering Properties of Fluorescent comprise have by
General formula: (Ba
1-x-y-z-usr
xmg
yeu
zmn
u)
2siO
4
(in formula, x, y, z and u are the number of satisfied 0.1≤x≤0.35,0.025≤y≤0.105,0.025≤z≤0.25,0.0005≤u≤0.02)
The europium of the composition represented and manganese activated alkali earths silicate phosphor,
Described crimson fluorescent body comprise have by
General formula: α MgO β MgF
2(Ge
1-xmn
x) O
2
(in formula, α, β and x are the number of satisfied 3.0≤α≤4.0,0.4≤β≤0.6,0.001≤x≤0.5)
Manganese activated fluogermanic acid magnesium (the manganese-activated magnesium fluorogermanate) fluorophor of the composition represented.
6. light-emitting device as claimed in claim 1, is characterized in that,
Described substrate comprises alumina sintered body.
7. a LED bulb, is characterized in that, comprising:
LED module, this LED module comprises substrate and installs the LED chip of the transmitting ultraviolet of more than four on the substrate or purple light, and the serial number that plural described LED chip carries out being connected in series and obtains by the LED chip formation of described more than four is the above series-parallel circuits of two row;
Matrix part, this matrix part is provided with described LED module;
Enclosed globe shade, this enclosed globe shade is arranged on described matrix part to cover described LED module;
Fluorescent film, this fluorescent film and described LED chip are arranged on the inner surface of described enclosed globe shade separatedly, comprise blue emitting phophor, green or yellow fluorophor and red-emitting phosphors, and absorb the ultraviolet or purple light that penetrate from described LED chip and send white light;
Lighting circuit, this lighting circuit is arranged in described matrix part, lights to make described LED chip; And
Socket, this socket is electrically connected with described lighting circuit,
The LED chip of described more than four has the shape of square or rectangular respectively, and be configured to rectangular, make to meet 2.6L≤P≤10L condition (P for from the center of a described LED chip to be present in proximal most position another described in LED chip center distance, under the shape of described LED chip is foursquare situation, L is the length on a limit, under the shape of described LED chip is rectangular situation, L is the mean value of long limit and minor face), and, the LED chip of described more than four cover by transparent resin layer, the described LED chip of each row be connected in series is sealed to linearity by described transparent resin layer respectively.
8. LED bulb as claimed in claim 7, is characterized in that,
Described fluorescent film also comprises at least one fluorophor selected from Color Rendering Properties of Fluorescent and crimson fluorescent body.
9. LED bulb as claimed in claim 7, is characterized in that,
Described substrate comprises alumina sintered body.
10. LED bulb as claimed in claim 7, is characterized in that,
Described LED module is arranged on described matrix part by resin-made screw or metal screw.
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| JP2011142542 | 2011-06-28 | ||
| PCT/JP2011/005160 WO2012035762A1 (en) | 2010-09-16 | 2011-09-14 | Light emitting device and led bulb |
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| JP6783987B2 (en) * | 2017-03-01 | 2020-11-11 | 豊田合成株式会社 | Light emitting device |
| JP6333429B2 (en) * | 2017-03-06 | 2018-05-30 | シャープ株式会社 | Light emitting device |
| KR101937196B1 (en) | 2017-08-08 | 2019-01-14 | 재경전광산업 주식회사 | Led module, led module array for led bulb and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101813255A (en) * | 2009-02-23 | 2010-08-25 | 优志旺电机株式会社 | Light supply apparatus |
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| Publication number | Publication date |
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| CN102959743A (en) | 2013-03-06 |
| WO2012035762A1 (en) | 2012-03-22 |
| JP5559338B2 (en) | 2014-07-23 |
| JPWO2012035762A1 (en) | 2014-01-20 |
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