CN102959743A - Light emitting device and LED bulb - Google Patents

Light emitting device and LED bulb Download PDF

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Publication number
CN102959743A
CN102959743A CN2011800301164A CN201180030116A CN102959743A CN 102959743 A CN102959743 A CN 102959743A CN 2011800301164 A CN2011800301164 A CN 2011800301164A CN 201180030116 A CN201180030116 A CN 201180030116A CN 102959743 A CN102959743 A CN 102959743A
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CN
China
Prior art keywords
led chip
light
led
fluorophor
emitting
Prior art date
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Granted
Application number
CN2011800301164A
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Chinese (zh)
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CN102959743B (en
Inventor
中川胜利
大屋恭正
碓井大地
山川昌彦
白川康博
近藤弘康
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Toshiba Corp
Toshiba Materials Co Ltd
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Toshiba Corp
Toshiba Materials Co Ltd
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Priority to JP2010208110 priority Critical
Priority to JP2010-208110 priority
Priority to JP2011-142542 priority
Priority to JP2011142542 priority
Application filed by Toshiba Corp, Toshiba Materials Co Ltd filed Critical Toshiba Corp
Priority to PCT/JP2011/005160 priority patent/WO2012035762A1/en
Publication of CN102959743A publication Critical patent/CN102959743A/en
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Publication of CN102959743B publication Critical patent/CN102959743B/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Abstract

A light emitting device (1) according to an embodiment includes an LED module (4) and a cover member (5). The LED module (4) includes four or more ultraviolet or violet emitting LED chips (3) arranged on a substrate (2). A fluorescent film (6) is provided along the cover member (5) and spaced from the LED chips (3). Where the distance from the center of one LED chip (3) to that of another LED chip (3) positioned nearest thereto is represented by P, and the length of one side of the LED chips if the LED chips are square or the average length of the long side and the short side if the LED chips are rectangles is represented by L, the four or more LED chips (3) are arranged in a matrix satisfying the condition of 2.6L< = P< = 10L.

Description

Light-emitting device and LED bulb
Technical field
Embodiment of the present invention relates to light-emitting device and LED bulb.
Background technology
Use the light-emitting device of light-emitting diode light (LED) to be widely used in the lighting devices such as backlight, signalling, various Switch, vehicle mounted lamp, general lighting of liquid crystal indicator.Especially, the white luminous type LED lamp (white led lamps) that is combined by LED and fluorophor gets most of the attention as the substitute of the ligthing paraphernalia that uses incandescent lamp bulb, fluorescent lamp, and carries out rapidly its exploitation.As the bulb of having used white led lamps (below be designated as the LED bulb), known have a for example following integrated structure: namely, in the enclosed globe shade on being installed on the matrix part with lamp socket led module is set, and the lighting circuit of led chip is set in matrix part, wherein, described led module comprises a plurality of led chips that are rectangular configuration.
The led chip (ultraviolet or purple LED) of the led chip (blue led) of in white led lamps, having used the coloured light that turns blue and the combination of yellow fluorophor (YAG fluorophor etc.) or emission ultraviolet or purple light and red-emitting phosphors, green or yellow fluorophor, and the combination of the mixing phosphor (BGR or BYR fluorophor) of red-emitting phosphors.The white led lamps that is combined by blue led and yellow fluorophor has the feature of guaranteeing easily brightness.On the other hand, the white led lamps that is combined by ultraviolet or purple LED and BGR or BYR fluorophor has the good feature of color rendering, and this color rendering is estimated by average color rendering index (Ra) etc.
When the substitute of the ligthing paraphernalia that uses white led lamps to be used as to use incandescent lamp bulb, fluorescent lamp, require to have the size identical with existing ligthing paraphernalia.Because restricted in shape as the white led lamps that ligthing paraphernalia uses, the driving source that therefore possesses fluorophor is that the shape of the led module of led chip also is restricted.In the white led lamps that is combined by blue led and yellow fluorophor, for the miniaturization that realizes led module, the increase of light quantity, usually can carry out highdensity configuration to led chip.In the white led lamps that is combined by ultraviolet or purple LED and BGR or BYR fluorophor, owing to the reasons such as the configuration shape of led chip, hermetically-sealed construction also can not get sufficient light quantity sometimes.Therefore, need a kind ofly can to satisfy the white led lamps that uses as ligthing paraphernalia at restriction in shape, the white led lamps that again light quantity is increased.
The prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 2005-005546 communique
Patent documentation 2: Japanese Patent Laid-Open 2009-170114 communique
Patent documentation 3: Japanese Patent Laid-Open 2008-117538 communique
Summary of the invention
Problem to be solved by this invention is to provide a kind of light-emitting device that is combined by ultraviolet ray or purple LED and fluorophor, and this device of giving out light can satisfy various lighting devices in shape restriction, and light quantity is increased.
The light-emitting device of execution mode comprises led module and the covering member that led module is covered.Led module comprises the emission ultraviolet more than four that is configured on the substrate or the led chip of purple light.Be provided with separatedly fluorescent film along covering member and led chip, this fluorescent film absorbs the ultraviolet that penetrates from led chip or purple light and sends visible light.Led chip more than four has respectively the shape of square or rectangular.Distance till will be from the center of a led chip to the center of another led chip that is present in proximal most position be made as P, with led chip be shaped as square the time the length on a limit or the mean value that is shaped as rectangle duration limit and minor face of led chip when being made as L, led chip more than four is configured to rectangular so that satisfy the condition of 2.6L≤P≤10L.
Description of drawings
Fig. 1 is the vertical view of the related light-emitting device of expression execution mode 1.
Fig. 2 is the cutaway view of light-emitting device shown in Figure 1.
Fig. 3 is the vertical view of the related light-emitting device of expression execution mode 2.
Fig. 4 is the cutaway view of light-emitting device shown in Figure 3.
Fig. 5 is the vertical view of led module in the light-emitting device of expression execution mode.
Fig. 6 is the vertical view of the related LED bulb of expression execution mode 3.
Fig. 7 is the figure that represents LED bulb shown in Figure 6 with part section.
Embodiment
Below, describe with reference to the light-emitting device of accompanying drawing to execution mode.Fig. 1 and Fig. 2 are the figure of the related light-emitting device of expression execution mode 1, and Fig. 3 and Fig. 4 are the figure of the related light-emitting device of expression execution mode 2.Light-emitting device 1 shown in these figure comprises: led module 4, this led module 4 comprise a plurality of emission ultraviolets of being configured on the substrate 2 or the led chip 3 of purple light; And be arranged on the substrate 2 to cover the covering member 5 of led chip 3.Although can enumerate the LED bulb that describes in detail hereinafter as the concrete example of light-emitting device 1, light-emitting device is not limited to this.Light-emitting device 1 consists of the various lighting devices such as substitute of the ligthing paraphernalia that utilizes fluorescent lamp.
Consisting of on the substrate 2 of led module 4, emission ultraviolet more than four or the led chip 3 of purple light are being installed.The light-emitting diodes such as InGaN class, GaN class, AlGaN class have been used in the led chip 3 of emission ultraviolet or purple light.The ultraviolet or the purple light that penetrate from led chip 3 are converted to visible light at the fluorescent film 6 that arranges along covering member 5.That is, be provided with separatedly fluorescent film 6 with led chip 3 on the inner surface of covering member 5, this fluorescent film 6 absorbs from ultraviolet or the purple light of led chip 3 ejaculations and sends visible light.In addition, fluorescent film 6 also can be arranged in the outer surface or covering member 5 of covering member 5.
Although fluorescent film 6 sends white light, is not limited to this, also can send other versicolor visible light (from the red light to the blue light etc.).The illuminant colour of fluorescent film 6 is determined by the kind of fluorophor.Preferably, when the led chip 3 with emission ultraviolet or purple light makes up when obtaining white light, fluorescent film 6 comprises mixing phosphor (BGR or BYR fluorophor), and this mixing phosphor comprises blue emitting phophor, green or yellow fluorophor, reaches red-emitting phosphors.Mixing phosphor also can further comprise at least a fluorophor of selecting or the fluorophor with other illuminant colour from Color Rendering Properties of Fluorescent and peony fluorophor.
With consist of above-mentioned BGR or BYR fluorophor each fluorophor, also have the Color Rendering Properties of Fluorescent that adds as required, peony fluorophor etc. and ultraviolet or purple light from led chip 3 to make up, consider from viewpoints such as the colour temperature of the white light that obtains, color renderings (average color rendering index Ra etc.), preferably use fluorophor as follows.As blue emitting phophor, using luminous peak wavelength is the fluorophor of 430~460nm scope, and preferred use for example has the alkali earths chlorophosphate phosphor of europium (Eu) activation of composition shown in the formula (1).
General formula: (Sr 1-x-y-zBa xCa yEu z) 5(PO 4) 3Cl (1)
(in the formula, x, y, and z for satisfying the number of 0≤x<0.5,0≤y<0.1,0.005≤z<0.1)
As green or yellow fluorophor, using luminous peak wavelength is the fluorophor of 490~580nm scope, preferred use from following fluorophor for example, select at least a: namely, have the europium (Eu) of composition shown in the formula (2) and the alkaline earth aluminate phosphor of manganese (Mn) activation; Have the europium (Eu) of composition shown in the formula (3) and the alkali earths silicate phosphor that manganese (Mn) activates; Terres rares chlorate MClO 3 fluorescent substance with cerium (Ce) activation of composition shown in the formula (4); Sialon phosphor with europium (Eu) activation of composition shown in the formula (5); And the Sialon phosphor that activates of the europium (Eu) with composition shown in the formula (6).
General formula: (Ba 1-x-y-zSr xCa yEu z) (Mg 1-uMn u) Al 10O 17(2)
(in the formula, x, y, z, and u for satisfying the number of 0≤x<0.2,0≤y<0.1,0.005<z<0.5,0.1<u<0.5)
General formula: (Sr 1-x-y-zuBa xMg yEu zMn u) 2SiO 4(3)
(in the formula, x, y, z, and u for satisfying the number of 0.1≤x≤0.35,0.025≤y≤0.105,0.025≤z≤0.25,0.0005≤u≤0.02)
General formula: RE 3A xAl 5-x-yB yO 12: Ce z(4)
(in the formula, RE represents from Y, Lu, reaches at least a element of selecting the Gd, A and B are paired element, (A, B) be (Mg, Si), (B, Sc), (B, In) a pair of arbitrarily in, x, y, and z for satisfying the number of x<2, y<2,0.9≤x/y≤1.1,0.05≤z≤0.5)
General formula: (Si, Al) 6(O, N) 8: Eu x(5)
(in the formula, x is for satisfying the number of 0<x<0.3)
General formula: (Sr 1-xEu x) αSi βAl γO δN ω(6)
(in the formula, x, α, β, γ, δ, and ω for satisfying the number of 0<x<1,0<α≤3,12≤β≤14,2≤γ≤3.5,1≤δ≤3,20≤ω≤22)
As red-emitting phosphors, using luminous peak wavelength is the fluorophor of 580~630nm scope, preferred use from following fluorophor for example, select at least a: namely, have the lanthanum oxysulfide fluorophor of europium (Eu) activation of composition shown in the formula (7); Have the europium (Eu) of composition shown in the formula (8) and the yttrium oxide fluorescent body that bismuth (Bi) activates; CASN fluorophor with europium (Eu) activation of composition shown in the formula (9); And the Sialon phosphor that activates of the europium (Eu) with composition shown in the formula (10).
General formula: (La 1-x-yEu xM y) 2O 2S (7)
(in the formula, M represents from Sm, Ga, Sb, reaches at least a element of selecting the Sn, and x and y are for satisfying the number of 0.08≤x<0.16,0.000001≤y<0.003)
General formula: (Y 1-x-yEu xBi y) 2O 3(8)
(in the formula, x and y are for satisfying the number of 0.01≤x<0.15,0.001≤y<0.05)
General formula: (Ca 1-x-ySr xEu y) SiAlN 3(9)
(in the formula, x and y are for satisfying the number of 0≤x<0.4,0<y<0.5)
General formula: (Sr 1-xEu x) αSi βAl γO δN ω(10)
(in the formula, x, α, β, γ, δ, and ω for satisfying the number of 0<x<1,0<α≤3,5≤β≤9,1≤γ≤5,0.5≤δ≤2,5≤ω≤15)
As Color Rendering Properties of Fluorescent, using luminous peak wavelength is the fluorophor of 460~490nm scope, and preferred use for example has the europium (Eu) of composition shown in the formula (11) and the alkali earths silicate phosphor that manganese (Mn) activates.
General formula: (Ba 1-x-y-z-uSr xMg yEu zMn u) 2SiO 4(11)
(in the formula, x, y, z, and u for satisfying the number of 0.1≤x≤0.35,0.025≤y≤0.105,0.025≤z≤0.25,0.0005≤u≤0.02)
As the peony fluorophor, using luminous peak wavelength is the fluorophor of 630~780nm scope, and preferred use for example has the fluogermanic acid magnesium fluorophor of manganese (Mn) activation of composition shown in the formula (12).
General formula: α MgO β MgF 2(Ge 1-xMn x) O 2(12)
(in the formula, α, β, and x for satisfying the number of 3.0≤α≤4.0,0.4≤β≤0.6,0.001≤x≤0.5)
According to the illuminant colour of light-emitting device 1 etc. the ratio of each fluorophor of consisting of mixing phosphor is suitably set.Preferably, mixing phosphor comprises following each fluorophor that the summation amount is 100 quality %: namely, and the blue emitting phophor of 10~60 quality % scopes; The Color Rendering Properties of Fluorescent of 0~10 quality % scope; Green or the yellow fluorophor of 1~30 quality % scope; The red-emitting phosphors of 30~90 quality % scopes; And the peony fluorophor of 0~35 quality % scope.If the employing mixing phosphor then can be obtained by identical fluorescence kind the large-scale white light that correlated colour temperature is 6500K~2500K.
Fluorescent film 6 for example can be formed by following mode, that is, the powder of mixing phosphor is mixed with adhesive resin etc., and this mixture (for example slurry) is coated on the inner surface of covering member 5, then heats, solidifies.Preferably, when the led chip 3 that uses emission ultraviolet or purple light during as the driving source of fluorescent film 6, the ultraviolet leakage from covering member 5 is suppressed.Based on this point, preferred, the thickness of fluorescent film 6 is the scope of 80~800 μ m.Thus, can be reduced to for example below the 0.3mW/nm/lm from the amount of ultraviolet (ultraviolet energy) that covering member 5 leaks.Preferred, the thickness of fluorescent film 6 is the scope of 150~600 μ m.
Covering member 5 has dome shape as shown in Figures 1 to 4.Yet the shape of covering member 5 is not limited thereto, and can use various shapes according to the structure of light-emitting device 1, purposes etc.Preferably, covering member 5 is material more than 85%, that have transparent or white body colour for the transmissivity of visible light, by forming such as glass, resin etc.Thus, can be efficiently white light of sending from fluorescent film 6 etc. be exported to the device outside.Covering member 5 also can comprise the material that ultraviolet or purple light (mainly being ultraviolet light) are absorbed, and the layer that ultraviolet or purple light are absorbed perhaps also can be set between covering member 5 and fluorescent film 6.
Led chip 3 can be that (peak luminous wavelength is 360~440nm) LED for emission ultraviolet or purple light type.Particularly preferably peak luminous wavelength is the scope of 370~415nm, and half amplitude of use emission spectrum is the led chip 3 of 10~15nm.When using when above-mentioned led chip 3 and the fluorescent film 6 that comprises above-mentioned mixing phosphor (BGR or BYR fluorophor, as required further add the mixing phosphor that obtains behind Color Rendering Properties of Fluorescent, the peony fluorophor) are combined, can not be subjected to the impact of the output bias of led chip 3, obtain the stable white light of correlated colour temperature, and can improve the rate of finished products of light-emitting device 1.
On the substrate 2 that consists of led module 4, the led chip 3 more than four is configured to rectangular (lattice-like).Led chip 3 has the shape of square or rectangular.Led chip 3 more than four is not to be configured to linearity, but is configured to the rectangular of multiple row.As the configuration pattern of led chip 3, can list lattice-shaped, staggered trellis etc.For example, as shown in Figure 5, led chip 3 is configured to lattice-shaped more than two row, two row at substrate 2.Be provided with wiring pattern 7 on the substrate 2 so that the led chip 3 more than four consists of series-parallel circuit.Wiring pattern 7 comprises: the first drafting department 7a that led chip 3 is connected in series; And the second pattern 7b that multiple row the first drafting department 7a is connected in parallel.
The electrode that is mixed with the led chip 3 of lattice-shaped is connected in series via metal lead wires (closing line) 8 such as the first drafting department 7a of wiring pattern 7 and Au lead-in wires respectively.Be formed with the row of a plurality of led chips that are connected in series 3 on the substrate 2.Each row of the led chip 3 that is connected in series are connected in parallel by the second drafting department 7b respectively, and consist of series-parallel circuit.The serial number (columns), the number in parallel (line number) that consist of the led chip 3 of series-parallel circuit are not particularly limited, and can carry out suitable setting according to the size of substrate 2, the size of light-emitting device 1 etc.
Internal quantum may reduce because of the Joule heat that produces when the driving LED chip 3, thereby causes light output step-down.The heat that produces in order efficiently led chip 3 to be driven is discharged into the outside of led module 4, and preferred to suppress the reduction of led chip 3 light output, the substrate 2 that led chip 3 is installed is made of the higher material of pyroconductivity.And, therefore preferred because substrate 2 is exposed under the ultraviolet or purple light of sending from led chip 3, though substrate 2 by be exposed to for a long time under ultraviolet or the purple light also not can variable color material consist of.Constituent material as the substrate 2 that satisfies above-mentioned condition can list ceramic material, metal material.
The preferred ceramic component that uses carborundum sintered body, silicon nitride sinter, aluminum nitride sintered product, alumina sintered body etc. to be used as consisting of substrate 2.The preferred hardware that uses aluminium sheet, copper coin etc. to be used as consisting of substrate 2.Consisted of by hardware in the situation of substrate 2, forming insulating barrier on the surface of substrate (metal substrate) 2, and form wiring pattern 7 thereon.Preferably, the insulating barrier that is formed at metallic substrate surfaces also is made of the insulating material that ultraviolet or purple light is had tolerance.As above-mentioned insulating barrier, can list superficial layer, surface-treated layer that the inorganic substances such as above-mentioned pottery, glass consist of, or the resin bed that is formed by silicones, fluorine-type resin, acrylic resin, cyclic olefine copolymer, polypropylene etc.Preferably, from the viewpoints such as the tolerance of ultraviolet or purple light, insulating properties, reflectivity, cost are considered, use alumina sintered body to be used as the constituent material of substrate 2.
As shown in Figures 1 to 4, in the light-emitting device 1 of present embodiment, fluorescent film 6 is arranged on the whole inner surface of covering member 5 in the mode that separates with led chip 3.Therefore, being arranged on whole fluorescent film 6 on the inner surface of covering member 5, to carry out face luminous, so can improve the light quantity of light-emitting device 1.Luminous for the above-mentioned whole fluorescent film 6 that is arranged at covering member 5 inner surfaces is carried out, need to make efficiently the ultraviolet or the purple light that penetrate from a plurality of led chips 3 arrive whole fluorescent film 6.
Distance till will be from the center of a led chip 3 to the center of another led chip 3 that is present in proximal most position be made as P, with led chip 3 be shaped as square the time the length on a limit or the mean value that is shaped as rectangle duration limit and minor face ((long limit+minor face)/2) of led chip 3 when being made as L, a plurality of led chips 3 in the light-emitting device 1 of present embodiment are configured, so that satisfy the condition of 2.6L≤P≤10L.As shown in Figure 5, when the street that respectively lists (distance between centers) with led chip 3 be made as P1, with the street (distance between centers) when being made as P2 between each row of led chip 3, at a plurality of led chips 3 of substrate 2 configurations, so that street P1 and street P2 satisfy the condition of 2.6L≤P (P1, P2)≤10L.
By disposing a plurality of led chips 3 and satisfying above-mentioned condition, can suppress ultraviolet or the purple interference of light penetrated from adjacent LED chip 3.Therefore, can make efficiently the ultraviolet or the purple light that penetrate from a plurality of led chips 3 arrive the whole fluorescent film 6 that is arranged on covering member 5 inner surfaces.Therefore, it is luminous effectively to make whole fluorescent film 6 carry out face, so can improve the light quantity of light-emitting device 1.If the not enough 2.6L in any one interval among street P1, the P2 of led chip 3, then the interference of light meeting between the adjacent LED chip 3 increases, so the luminous efficiency of fluorescent film 6 can descend.
Even led chip 3 is configured so that any one interval among street P1, the P2 surpasses 10L, fluorescent film 6 light quantities are identical when also satisfying 2.6L≤P (P1, P2)≤10L condition with street P1, P2, can not expect that light quantity can further improve.On the contrary, increase the size that street P1, P2 can cause disposing the substrate 2 of led chip 3 and become large.Therefore, cause possibly the manufacturing cost of led module 4 to increase, maybe can not satisfy as the light-emitting device 1 of ligthing paraphernalia etc. in shape restriction.This is the main cause that causes the practicality as the light-emitting device 1 of the substitute of the ligthing paraphernalia that uses incandescent lamp bulb, fluorescent lamp to reduce.
According to the led module 4 that street P1 and the street P2 of a plurality of (more than four) led chip 3 satisfies 2.6L≤P (P1, P2)≤10L condition, the size that can suppress substrate 2 becomes large, can improve again the luminous efficiency of fluorescent film 6.Preferably, the led chip 3 that is configured on the substrate 2 is covered by transparent resin layer 9.Such as preferred use silicones, epoxy resin etc. in the transparent resin layer 9 particularly preferably used preferably silicones of uviolresistance.By covering led chip 3 with transparent resin layer 9, can improve from the ultraviolet of led chip 3 ejaculations or diffusion breadth and the derivation efficient of purple light, so can further improve the luminous efficiency of fluorescent film 6.
Yet if utilize in the lump transparent resin layer 9 to seal to a plurality of led chips 3 that are configured on the substrate 2, ultraviolet or purple light may interfere in transparent resin layer 9, and perhaps the derivation efficient of ultraviolet or purple light can descend on the contrary.Therefore, preferred,, transparent resin layer 9 for example is sealed to linearity with the led chip 3 of each row as shown in Figures 1 and 2, perhaps as shown in Figures 3 and 4 each led chip 3 is separately sealed.By a plurality of led chips 3 being sealed to linearity or each led chip 3 separately being sealed, can suppress ultraviolet or purple light and in transparent resin layer 9, interfere, improve the derivation efficient of ultraviolet or purple light.Therefore, can further improve the luminous efficiency of fluorescent film 6.
Preferably, in the situation of the derivation efficient of only considering ultraviolet or purple light, as shown in Figures 3 and 4, each led chip 3 is separately sealed.Yet the difference according to the street of led chip 3 may be difficult to led chip 3 is separately sealed, and also may cause the rising of manufacturing cost etc.In these cases, preferred, as shown in Figures 1 and 2, a plurality of led chips 3 are sealed to linearity.Among Fig. 1 and Fig. 2, each row of led chip 3 are formed respectively transparent resin layer 9 sealings of linearity.According to above-mentioned transparent resin layer 9, and compare when rectangular led chip 3 seals in the lump being configured to, can improve the derivation efficient of ultraviolet or purple light.
As mentioned above, the street P1 and the street P2 that are configured in a plurality of (more than the four) led chip 3 on the substrate 2 satisfy 2.6L≤P (P1, P2)≤condition of 10L, and further utilize transparent resin layer 9 that plural led chip 3 is sealed to linearity or each led chip 3 is separately sealed, according to the led module 4 that obtains therefrom, the size that can suppress substrate 2 becomes large, can improve again the luminous efficiency of fluorescent film 6.Therefore, by using above-mentioned led module 4, can satisfy as the substitute of the ligthing paraphernalia of existing use incandescent lamp bulb, fluorescent lamp in shape restriction, a kind of light-emitting device 1 that has increased light quantity can be provided again.
And in the light-emitting device 1 of present embodiment, it is luminous to make whole fluorescent film 6 on the inner surface that is arranged on covering member 5 carry out face, so white light etc. is luminous from fluorescent film 6 to comprehensive diffusion.And because that the light that only sends by fluorescent film 6 carries out is luminous, it is unequal therefore to suppress local luminance.Thus, can obtain there is not high light, even and soft white light.That is, can significantly reduce the dazzle of light-emitting device 1.In addition, in the situation of the led chip 3 that uses emission ultraviolet or purple light, owing to can utilize various fluorophor to consist of fluorescent film 6, therefore can improve the color rendering of white light.Particularly, can easily obtain correlated colour temperature below the 6500K and average color rendering index Ra at the white light more than 85.
And, by the inner surface at covering member 5 fluorescent film 6 is set, can improve the luminous intensity distribution angle of light-emitting device 1, can also suppress by the temperature rising of fluorescent film 6 etc. cause brightness in time through and descend.That is, because white light spreads towards periphery from the whole surface of fluorescent film 6, therefore can make the diffusion breadth of the white light etc. at the directive device back side become large.Therefore, can more effectively increase the luminous intensity distribution angle of light-emitting device 1.And, by fluorescent film 6 and led chip 3 being arranged on separatedly the inner surface of covering member 5, even when the temperature of led chip 3 rises, temperature rising that also can Fluorophotometry film 6.Therefore, can light light-emitting device 1 during brightness in time through and situation about descending suppresses.
Then, with reference to Fig. 6 and Fig. 7 execution mode 3 related LED bulbs are described.Comprise at the LED bulb 11 shown in these figure: led module 12; Be provided with the matrix part 13 of led module 12; Be installed on the matrix part 13 to cover the enclosed globe shade 14 of led module 12; Be installed in the socket (not shown) of the bottom of matrix part 13 across insulating component etc.; And be arranged on lighting circuit (not shown) in the matrix part 13.
Identical with the light-emitting device 1 of above-mentioned execution mode 1 and execution mode 2, led module 12 comprises a plurality of emission ultraviolets of being installed on the substrate 2 or the led chip 3 of purple light.A plurality of led chips 3 are configured on the substrate 2 with being as mentioned above lattice-shaped.The configuration shape of led chip 3, configuration space are identical with above-mentioned execution mode 1 and execution mode 2.On the side or bottom surface of led module 12, lead among the figure abridged wiring, this wiring lighting circuit (not shown) interior with being arranged on matrix part 3 is electrically connected.The direct voltage that utilization applies via lighting circuit is lighted led chip 3.
Led module 12 is arranged on the matrix part 13, and this matrix part 13 comprises abridged lighting circuit among the figure and the socket that is attached thereto etc.Preferably, when when matrix part 13 arranges led module 12, utilize the lower materials of toughness such as alumina sintered body to consist of in the situation of substrate 2, be preferably the installation unit that application can suppress the breach of substrate 2 or cracking etc.Particularly, preferred, utilize resinous screw, perhaps utilize metal screw across resinous packing ring, led module 12 (substrate 2) is installed on the matrix part 13.Also can use resinous sheet material that substrate 2 integral body are pressed, formed body etc. and replace resinous packing ring.Preferably, screw, sept (packing ring, sheet material etc.) are formed the resin material that ultraviolet or purple light have tolerance by silicones, fluorine-type resin, acrylic resin, cyclic olefine copolymer, polypropylene etc.
The inner surface of enclosed globe shade 14 is provided with fluorescent film 15, and the ultraviolet that 15 pairs of this fluorescent films penetrate from led chip 3 or purple light absorb and send white light.For the fluorophor that consists of fluorescent film 15, identical with above-mentioned execution mode 1 and execution mode 2, select to obtain desired white light.The light (not comprising the light that penetrates from led chip 3) that fluorescent film 15 can only utilize these fluorophor to send obtains white light etc.Enclosed globe shade 14 can be used the enclosed globe shade that has dome shape as Figure 6 and Figure 7, but is not limited in this, also can have eggplant shape etc.Preferably, enclosed globe shade 14 is by forming with the identical material of material that forms of above-mentioned covering member 5.Enclosed globe shade 14 has the size identical with for example incandescent lamp bulb.
The inner surface that fluorescent film 15 in the LED bulb 11 of present embodiment and led chip 3 are arranged on enclosed globe shade 14 separatedly.In addition, the led chip 3 that consists of led module 12 is configured, make its aforesaid substrate 2 satisfy 2.6L≤P≤10L condition (P is the distance till from the center of a led chip 3 to the center of another led chip 3 that is present in proximal most position, L be led chip 3 be shaped as square the time the length on a limit or the mean value that is shaped as rectangle duration limit and minor face ((long limit+minor face)/2) of led chip 3).And, utilize to seal with above-mentioned execution mode 1 and execution mode 2 identical 9 pairs of a plurality of led chips 3 of sealing resin layer.Thus, can improve the luminous efficiency of fluorescent film 15, so can increase the light quantity of LED bulb 11.
With the light-emitting device 1 of above-mentioned execution mode similarly, can make the raisings such as color rendering of the white light that sends from LED bulb 11.Particularly, can easily obtain correlated colour temperature below the 6500K and average color rendering index (Ra) at the white light more than 85.By obtaining above-mentioned white light, can make the practicality raising as the LED bulb 11 of incandescent lamp bulb substitute.And, the luminous intensity distribution angle that can increase LED bulb 11, and can to caused by the temperature rising of fluorescent film 15 etc. brightness in time through and situation about reducing suppresses.
That is, it is luminous that the LED bulb 11 of present embodiment makes the whole fluorescent film 15 that is arranged on enclosed globe shade 14 inner surfaces carry out face, so white light is from fluorescent film 15 to comprehensive diffusion.Thus, can make the diffusion breadth of the white light at the directive bulb back side become large.Therefore, the luminous intensity distribution angle of the white light of LED bulb 11 is increased.According to the LED bulb 11 of present embodiment, can make the luminous intensity distribution angle for example reach 200 degree or more than 200 degree.In addition, because sufficient distance is arranged between fluorescent film 15 and the led chip 3, so even the temperature of led chip 3 rises when LED bulb 11 is lighted continuously, the temperature of fluorescent film 15 for example also can rise to about 60 ° of C.Therefore, can light LED bulb 11 during brightness in time through and situation about descending suppresses.
Embodiment
Next, specific embodiment and evaluation result thereof are narrated.
(embodiment 1~4)
At first, be on the aluminum oxide substrate of 30 * 30mm in profile, respectively with street P1, the P2 shown in the table 1, be that the led chip of 0.4 * 0.4mm is configured to 5 series connection * 5 parallel connections with chip form.The emission wavelength of led chip is as shown in table 1.Then, as shown in Figure 1, utilize transparent silicones respectively the chip alignment that is connected in series separately to be sealed.Silicones is sealed to linearity with the led chip of each chip alignment.Be formed with the covering member of fluorescent film by on above-mentioned led module, arranging respectively by hereinafter described at inner surface, produce the white light emitting device of embodiment 1~4.These white light emitting devices are used for hereinafter described evaluating characteristics.
Formation fluorescent film as described below.At first, prepare alkali earths the chlorophosphate ((Sr that Eu activates 0.604Ba 0.394Eu 0.002) 5 (PO 4) 3Cl) fluorophor is prepared alkali earths the silicate ((Sr that Eu and Mn activate as blue emitting phophor 0.675Ba 0.25Mg 0.0235Eu 0.05Mn 0.0015) 2SiO 4) fluorophor is as green or yellow fluorophor, prepares the lanthanum oxysulfide ((La that Eu activates 0.9Eu 0.1) 2O 2S) fluorophor is as red-emitting phosphors.After these fluorophor are mixed with the ratio of blue emitting phophor 27 quality %, green or yellow fluorophor 4 quality %, red-emitting phosphors 69 quality %, it is distributed in the silicones as fluorophor paste (fluorophor ratio: 65 quality %).This fluorophor paste is coated on the inboard of the covering member of Merlon system, utilizes afterwards baking oven etc. to heat-treat, make thus the curing of coating of fluorophor paste.The thickness of fluorescent film is decided to be 0.2mm.
(comparative example 1~5)
Except street P1, the P2 of led chip with 5 series connection * 5 parallel connections was altered to respectively the value shown in the table 1, other was identical with embodiment 1, the making white light emitting device.These white light emitting devices are used for hereinafter described evaluating characteristics.
[table 1]
The driving voltage and the drive current that the white light emitting device of embodiment 1~4 and comparative example 1~5 are applied led chip as shown in table 2 make it luminous, and light output, total light flux, the correlated colour temperature of the white light that sends from each white light emitting device are measured.These characteristics are measured by the SLMS total light flux mensuration system that Lan Fei Optical Co., Ltd makes.These results are as shown in table 2.
[table 2]
Clear as can be known by table 2, with respect to the value (4mm) that among the embodiment 1 street P1, P2 is made as respectively 10 times of square chip one edge lengths (0.4mm), although embodiment 2~4 chips interval P2 are narrower, but because each street P2 is more than 2.6 times of the chip length of side, so the difference of light output and total light flux is controlled in 5%.On the other hand, light output and total light flux have descended respectively about 25% with respect to embodiment 1 in the comparative example 1,2.This is because 2.6 times of the not enough chip length of side of street P2 (0.4mm), thus the interference of light grow that penetrates from the adjacent LED chip, thus make derivation decrease in efficiency from the light of led chip.
Light output and total light flux have descended respectively about 50% with respect to embodiment 1 in the comparative example 3,4.This is because 2.6 times of the equal not enough chip length of side of street P1, P2 (0.4mm), thus the remarkable grow of interference of light that penetrates from the adjacent LED chip, thus the derivation efficient from the light of led chip is declined to a great extent.Comparative example 5 expands street P2 to above 10 times of the chip length of sides (0.4mm) value (4.5mm), and the result has obtained identical light output and the total light flux substantially with embodiment 1.Yet light output, total light flux can further not improve, and cause greatly cost to rise thereby substrate is become, but also can cause as the compatibility reduction of the various plant bulks of led module etc.
(embodiment 5~8)
At first, be on the aluminum oxide substrate of 35 * 35mm in profile, respectively with street P1, the P2 shown in the table 3, be that the led chip of 0.6 * 0.6mm is configured to 4 series connection * 4 parallel connections with chip form.The emission wavelength of led chip is as shown in table 3.Then, as shown in Figure 3, utilize transparent silicones respectively each led chip separately to be sealed.Be formed with the covering member of fluorescent film by on above-mentioned led module, arranging respectively by hereinafter described at inner surface, produce the white light emitting device of embodiment 5~8.The characteristic of these white light emitting devices is carried out the mensuration identical with embodiment 1.Table 4 illustrates its result.
Formation fluorescent film as described below.At first, prepare alkali earths the chlorophosphate ((Sr that Eu activates 0.604Ba 0.394Eu 0.002) 5(PO 4) 3Cl) fluorophor is prepared alkali earths the silicate ((Sr that Eu and Mn activate as blue emitting phophor 0.675Ba 0.25Mg 0.0235Eu 0.05Mn 0.0015) 2SiO 4) fluorophor is as green or yellow fluorophor, prepares the lanthanum oxysulfide ((La that Eu activates 0.9Eu 0.1) 2O 2S) fluorophor is as red-emitting phosphors.After these fluorophor are mixed with the ratio of blue emitting phophor 52 quality %, green or yellow fluorophor 3 quality %, red-emitting phosphors 45 quality %, it is distributed in the silicones as fluorophor paste (fluorophor ratio: 60 quality %).This fluorophor paste is coated on the inboard of the covering member of Merlon system, utilizes afterwards baking oven etc. to heat-treat, make thus the curing of coating of fluorophor paste.The thickness of fluorescent film is decided to be 0.2mm.
(comparative example 6~10)
Except street P1, the P2 of led chip with 4 series connection * 4 parallel connections was altered to respectively the value shown in the table 1, other was identical with embodiment 5, the making white light emitting device.The characteristic of these white light emitting devices is carried out the mensuration identical with embodiment 5.Table 4 illustrates its result.
[table 3]
[table 4]
Clear as can be known by table 4, with respect to the value (6mm) that among the embodiment 5 street P1, P2 is made as respectively 10 times of square chip one edge lengths (0.6mm), although embodiment 6~8 chips interval P2 are narrower, but because each street P2 is more than 2.6 times of the chip length of side, so the difference of light output and total light flux is controlled in 3%.On the other hand, light output and total light flux have descended respectively about 25% with respect to embodiment 5 in the comparative example 6,7.This is because 2.6 times of the not enough chip length of side of street P2 (0.6mm), thus the interference of light grow that penetrates from the adjacent LED chip, thus make derivation decrease in efficiency from the light of led chip.
Light output and total light flux have descended respectively 45~60% with respect to embodiment 5 in the comparative example 8,9.This is because 2.6 times of the equal not enough chip length of side of street P1, P2 (0.6mm), thus the remarkable grow of interference of light that penetrates from the adjacent LED chip, thus the derivation efficient from the light of led chip is declined to a great extent.Comparative example 10 expands street P2 to above 10 times of the chip length of sides (0.6mm) value (7mm), and the result has obtained identical light output and the total light flux substantially with embodiment 5.Yet light output, total light flux can further not improve, and cause greatly cost to rise thereby substrate is become, but also can cause as the compatibility reduction of the various plant bulks of led module etc.
(embodiment 9~12)
At first, be on the aluminum oxide substrate of 25 * 25mm in profile, respectively with street P1, the P2 shown in the table 5, be that (mean value of long limit and minor face: led chip 0.475mm) is configured to 5 series connection * 5 parallel connections to 0.7 * 0.25mm with chip form.The emission wavelength of led chip is as shown in table 5.Then, as shown in Figure 6, utilize transparent silicones respectively the chip alignment that is connected in series separately to be sealed.Above-mentioned led module is fixed on the matrix part (radiator), and will be arranged on the led module by the described enclosed globe shade that is formed with fluorescent film at inner surface hereinafter respectively, produce thus the LED bulb of embodiment 9~12.The characteristic of these LED bulbs is carried out the mensuration identical with embodiment 1.Table 6 illustrates its result.
Formation fluorescent film as described below.At first, prepare alkali earths the chlorophosphate ((Sr that Eu activates 0.604Ba 0.394Eu 0.002) 5(PO 4) 3Cl) fluorophor is prepared alkali earths the silicate ((Sr that Eu and Mn activate as blue emitting phophor 0.675Ba 0.25Mg 0.0235Eu 0.05Mn 0.0015) 2SiO 4) fluorophor is as green or yellow fluorophor, prepares the lanthanum oxysulfide ((La that Eu activates 0.9Eu 0.1) 2O 2S) fluorophor is as red-emitting phosphors.After these fluorophor are mixed with the ratio of blue emitting phophor 63 quality %, green or yellow fluorophor 2 quality %, red-emitting phosphors 35 quality %, it is distributed in the silicones as fluorophor paste (fluorophor ratio: 60 quality %).This fluorophor paste is coated on the inboard of the enclosed globe shade of Merlon system, utilizes afterwards baking oven etc. to heat-treat, make thus the curing of coating of fluorophor paste.The thickness of fluorescent film is decided to be 0.2mm.
(comparative example 11~15)
Except street P1, the P2 of led chip with 5 series connection * 5 parallel connections was altered to respectively the value shown in the table 1, other was identical with embodiment 9, making LED bulb.The characteristic of these LED bulbs is carried out the mensuration identical with embodiment 9.Table 6 illustrates its result.
[table 5]
[table 6]
Clear as can be known by table 6, with respect to the about 10 times value (4.5mm) of mean value (0.475mm) that among the embodiment 9 street P1, P2 is made as respectively the long limit of rectangle chip and minor face, although embodiment 10~12 chips interval P2 are narrower, but because each street P2 is more than 2.6 times of chip length of side mean value, so the difference of light output and total light flux is controlled in 5%.On the other hand, light output and total light flux have descended respectively about 20~30% with respect to embodiment 9 in the comparative example 11,12.This is because 2.6 times of the mean value (0.475mm) on the not enough chip of street P2 limit, thus the interference of light grow that penetrates from the adjacent LED chip, thus make derivation decrease in efficiency from the light of led chip.
In the comparative example 13,14, light output and total light flux have descended respectively 50~60% with respect to embodiment 9.This is because 2.6 times of the mean value on the equal not enough chip of street P1, P2 limit, thus the remarkable grow of interference of light that penetrates from the adjacent LED chip, thus the derivation efficient from the light of led chip is declined to a great extent.Comparative example 15 expands street P2 to above the mean value on chip limit 10 times value (5.5mm), and the result has obtained identical light output and the total light flux substantially with embodiment 9.Yet light output, total light flux can further not improve, and cause greatly cost to rise thereby substrate is become, but also can cause as the compatibility reduction of the various plant bulks of led module etc.
In addition, although several execution modes of the present invention are illustrated, these execution modes are just pointed out as example, the intention of unqualified invention scope.These new execution modes can be implemented with other variety of ways, can carry out various omissions, displacement, change in the scope that does not break away from the invention main points.These execution modes and its distortion are included in scope of invention and the main points, and are included in the invention put down in writing in claims and the impartial scope thereof.

Claims (18)

1. a light-emitting device is characterized in that, comprising:
Led module, this led module comprise substrate and are configured in the emission ultraviolet more than four on the described substrate or the led chip of purple light;
Covering member, this covering member covers described led module; And
Fluorescent film, this fluorescent film arranges separatedly along described covering member and described led chip, the ultraviolet that penetrates from described led chip or purple light being absorbed and send visible light,
Described led chip more than four has respectively the shape of square or rectangular, and be configured to rectangular, (P is the distance till from the center of a described led chip to the center of another the described led chip that is present in proximal most position so that satisfy the condition of 2.6L≤P≤10L, in the foursquare situation of being shaped as of described led chip, L is the length on a limit, in the rectangular situation of being shaped as of described led chip, L is the mean value of long limit and minor face).
2. light-emitting device as claimed in claim 1 is characterized in that,
Described led chip consist of plural described led chip is connected in series and serial number be series-parallel circuits more than two row.
3. light-emitting device as claimed in claim 1 is characterized in that,
Described led chip is sealed by transparent resin layer, and forms described transparent resin layer in the mode that plural described led chip is sealed to linearity.
4. light-emitting device as claimed in claim 1 is characterized in that,
Described led chip is sealed by transparent resin layer, and forms described transparent resin layer in the mode that described led chip is separately sealed.
5. light-emitting device as claimed in claim 1 is characterized in that,
In the described ultraviolet that penetrates from described led chip or the scope of peak luminous wavelength below the above 415nm of 370nm of purple light.
6. light-emitting device as claimed in claim 1 is characterized in that,
Described fluorescent film comprises blue emitting phophor, green or yellow fluorophor, and red-emitting phosphors, and sends white light and be used as described visible light.
7. light-emitting device as claimed in claim 6 is characterized in that,
Described blue emitting phophor comprise have by
General formula: (Sr 1-x-y-zBa xCa yEu z) 5(PO 4) 3Cl
(in the formula, x, y, and z for satisfying the number of 0≤x<0.5,0≤y<0.1,0.005≤z<0.1)
The europkium-activated alkali earths chlorophosphate phosphor of the composition that represents,
Described green or yellow fluorophor comprise at least a fluorophor that is selected from following fluorophor:
Have by general formula: (Ba 1-x-y-zSr xCa yEu z) (Mg 1-uMn u) Al 10O 17
(in the formula, x, y, z, and u for satisfying the number of 0≤x<0.2,0≤y<0.1,0.005<z<0.5,0.1<u<0.5)
The europium of the composition that represents and manganese activated alkaline earth aluminate phosphor;
Have by general formula: (Sr 1-x-y-zuBa xMg yEu zMn u) 2SiO 4
(in the formula, x, y, z, and u for satisfying the number of 0.1≤x≤0.35,0.025≤y≤0.105,0.025≤z≤0.25,0.0005≤u≤0.02)
The europium of the composition that represents and manganese activated alkali earths silicate phosphor;
Have by general formula: RE 3A xAl 5-x-yB yO 12: Ce z
(in the formula, RE represents from Y, Lu, reaches at least a element of selecting the Gd, A and B are paired element, (A, B) be (Mg, Si), (B, Sc), (B, In) a pair of arbitrarily in, x, y, and z for satisfying the number of x<2, y<2,0.9≤x/y≤1.1,0.05≤z≤0.5)
The rare earth aluminate fluorophor that the cerium of the composition that represents activates,
Have by general formula: (Si, Al) 6(O, N) 8: Eu x
(in the formula, x is for satisfying the number of 0<x<0.3)
The europkium-activated Sialon phosphor of the composition that represents; And
Have by general formula: (Sr 1-xEu x) αSi βAl γO δN ω
(in the formula, x, α, β, γ, δ, and ω for satisfying the number of 0<x<1,0<α≤3,12≤β≤14,2≤γ≤3.5,1≤δ≤3,20≤ω≤22)
The europkium-activated Sialon phosphor of the composition that represents,
Described red-emitting phosphors comprises at least a fluorophor that is selected from following fluorophor:
Have by general formula: (La 1-x-yEu xM y) 2O 2S
(in the formula, M represents from Sm, Ga, Sb, reaches at least a element of selecting the Sn, and x and y are for satisfying the number of 0.08≤x<0.16,0.000001≤y<0.003)
The europkium-activated lanthanum oxysulfide fluorophor of the composition that represents;
Have by general formula: (Y 1-x-yEu xBi y) 2O 3
(in the formula, x and y are for satisfying the number of 0.01≤x<0.15,0.001≤y<0.05)
The yttrium oxide fluorescent body that the europium of the composition that represents and bismuth activate;
Have by general formula: (Ca 1-x-ySr xEu y) SiAlN 3
(in the formula, x and y are for satisfying the number of 0≤x<0.4,0<y<0.5)
The europkium-activated CASN fluorophor of the composition that represents; And
Have by general formula: (Sr 1-xEu x) αSi βAl γO δN ω
(in the formula, x, α, β, γ, δ, and ω for satisfying the number of 0<x<1,0<α≤3,5≤β≤9,1≤γ≤5,0.5≤δ≤2,5≤ω≤15)
The europkium-activated Sialon phosphor of the composition that represents.
8. light-emitting device as claimed in claim 6 is characterized in that,
Described fluorescent film also comprises at least a fluorophor of selecting from Color Rendering Properties of Fluorescent and peony fluorophor.
9. light-emitting device as claimed in claim 8 is characterized in that,
Described Color Rendering Properties of Fluorescent comprise have by
General formula: (Ba 1-x-y-z-uSr xMg yEu zMn u) 2SiO 4
(in the formula, x, y, z, and u for satisfying the number of 0.1≤x≤0.35,0.025≤y≤0.105,0.025≤z≤0.25,0.0005≤u≤0.02)
The europium of the composition that represents and manganese activated alkali earths silicate phosphor,
Described peony fluorophor comprise have by
General formula: α MgO β MgF 2(Ge 1-xMn x) O 2
(in the formula, α, β, and x for satisfying the number of 3.0≤α≤4.0,0.4≤β≤0.6,0.001≤x≤0.5)
Manganese activated fluogermanic acid magnesium (manganese-activatedmagnesium fluorogermanate) fluorophor of the composition that represents.
10. light-emitting device as claimed in claim 1 is characterized in that,
Described substrate comprises alumina sintered body.
11. a LED bulb is characterized in that, comprising:
Led module, this led module comprise substrate and are installed in the emission ultraviolet more than four on the described substrate or the led chip of purple light;
Matrix part is provided with described led module on this matrix part;
Enclosed globe shade, this enclosed globe shade are installed on the described matrix part to cover described led module;
Fluorescent film, this fluorescent film and described led chip are arranged on the inner surface of described enclosed globe shade separatedly, absorb ultraviolet or the purple light that penetrates from described led chip and send white light;
Lighting circuit, this lighting circuit is arranged in the described matrix part, so that described led chip is lighted; And
Socket, this socket is electrically connected with described lighting circuit,
Described led chip more than four has respectively the shape of square or rectangular, and be configured to rectangular, (P is the distance till from the center of a described led chip to the center of another the described led chip that is present in proximal most position so that satisfy the condition of 2.6L≤P≤10L, in the foursquare situation of being shaped as of described led chip, L is the length on a limit, in the rectangular situation of being shaped as of described led chip, L is the mean value of long limit and minor face).
12. LED bulb as claimed in claim 11 is characterized in that,
Described led chip consist of plural described led chip is connected in series and serial number be series-parallel circuits more than two row.
13. LED bulb as claimed in claim 11 is characterized in that,
Described led chip is sealed by transparent resin layer, and forms described transparent resin layer in the mode that plural described led chip is sealed to linearity.
14. LED bulb as claimed in claim 11 is characterized in that,
Described led chip is sealed by transparent resin layer, and forms described transparent resin layer in the mode that described led chip is separately sealed.
15. LED bulb as claimed in claim 11 is characterized in that,
Described fluorescent film comprises blue emitting phophor, green or yellow fluorophor, reaches red-emitting phosphors.
16. LED bulb as claimed in claim 15 is characterized in that,
Described fluorescent film also comprises at least a fluorophor of selecting from Color Rendering Properties of Fluorescent and peony fluorophor.
17. LED bulb as claimed in claim 11 is characterized in that,
Described substrate comprises alumina sintered body.
18. LED bulb as claimed in claim 11 is characterized in that,
Described led module is installed on the described matrix part by resin screw or metal-made screw.
CN201180030116.4A 2010-09-16 2011-09-14 Light emitting device and LED bulb Active CN102959743B (en)

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