CN102957083B - Device for implementing all-solid-state deep ultraviolet laser with wavelength of 160-170 nm through direct frequency doubling - Google Patents
Device for implementing all-solid-state deep ultraviolet laser with wavelength of 160-170 nm through direct frequency doubling Download PDFInfo
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Abstract
The invention discloses a device for implementing all-solid-state deep ultraviolet laser with a wavelength of 160-170 nm through direct frequency doubling. A pumping source of the device is a pumping source of all-solid-state ultraviolet laser with a wavelength of 320-340 nm; sheetlike deep ultraviolet frequency doubling crystals are optically glued on right-angled prismy beveled surfaces of first and second matching materials; the obtuse-angle cutting angle of the first matching material meets a demand that ultraviolet laser with a wavelength of 320-340 nm is vertically fed into the first matching material and then fed into the direct frequency doubling crystal so as to satisfy the phase matching angle of the frequency doubling crystal; the obtuse-angle cutting angle of the second matching material meets a demand that ultraviolet laser with a wavelength of 160-170 nm is emitted perpendicular to the right-angled surface of the second matching material; and ultraviolet laser enters into a sealed tank through an incident window, then is vertically fed from the right-angled edge of the first matching material, and subjected to direct frequency doubling through the frequency doubling crystals, and after generated ultraviolet laser and residual ultraviolet laser are separated after passing through the second matching material, the ultraviolet laser with a wavelength of 160-170 nm is outputted from an emergent window. The device disclosed by the invention is simple in laser path, reliable in system, high in efficiency and compact in structure.
Description
Technical field
The present invention relates to all-solid state laser technical field, particularly a kind of direct frequency doubling is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm.
Background technology
Laser technology especially all-solid state laser technology is widely used in military affairs, science and economic society field with its precise treatment, practical feature, and it is produced to important and far-reaching impact.Ultraviolet is deep ultraviolet (DUV) LASER Light Source especially, as wavelength between 40nm the LASER Light Source to electromagnetic radiation wave band between 200nm, because its wavelength is short, photon energy is high, thereby there is important using value in fields such as high-resolution imaging, spectrum, microfabrication, scientific research and industry manufactures.
At present, the method that produces deep ultraviolet laser mainly contains ArF excimer laser (K.Kaki zaki, T.Matsunaga, et al, " Ultra-high-repetition rate ArF excimer laser with long pulse duration for 193nm lithography ", Proceeding of SPIE, 1210) and all solid state sharp deep ultraviolet laser light source 2001 (4346):.Excimer laser is maximum deep ultraviolet coherent laser source of using at present, its wavelength has the particular spectral lines such as 157nm, 193nm, there is high-average power, high pulse energy, simple in structure, efficiency advantages of higher, but its drive manner few (CW and ns), wavelength are fixed, gas is poisonous, once inflate the shortcomings such as the life-span is limited.All solid state deep ultraviolet laser light source has wide using value owing to having the advantages such as compact conformation, volume is little, efficiency is high, but because suitable deep ultraviolet nonlinear optical crystal is few, therefore a lot of all solid state deep ultraviolet laser light sources generally adopt frequency multiplication and frequently and the mode such as mixing produce, technical sophistication, be bulkyly unfavorable for practicality.
Old wound day leader's seminar and Xu Zuyan leader's the seminar of Physical Chemistry Technology Inst., Chinese Academy of Sciences have carried out the work (Xu Zuyan of a large amount of initiatives at deep ultraviolet crystalline material and laser technology field, " deep ultraviolet all-solid state laser source ", Chinese laser, 2009 (36): 1619), use first in the world direct frequency doubling method, 177.3 deep ultraviolet laser outputs have been realized, broken through all-solid state laser 200nm barrier, and invented its operation technique-prism-coupled technology (a kind of laser frequency conversion coupler with nonlinear optical crystal, ZL 01115313.X).
But for the deep ultraviolet all-solid state laser light source of 160～170nm of short wavelength more, mainly contain at present utilize ti sapphire laser pass through complicated with frequently, frequency doubling system first produces Ultra-Violet Laser, recycling KBBF deep ultraviolet nonlinear crystal frequency multiplication realizes 160nm laser (J.Opt.Soc.Am.B/Vol.21, No.2/February 2004,370-375), or utilize two bundle laser and mode frequently to realize 160～170nm deep ultraviolet laser by nonlinear crystals such as BBO, said method light path is complicated, system is huge, expensive, is unfavorable for practicality.
Summary of the invention
The object of the invention is for realizing at present all solid state deep ultraviolet laser system complex of 160～170nm, being unfavorable for practical problem, propose a kind of method that adopts 1.28～1.36 microns of basic frequency laser octonaries to realize all solid state deep ultraviolet laser of 160～170nm.Use two frequency multiplication generators and quadruple generator to carry out to 1.28～1.36 microns of basic frequency lasers the Ultra-Violet Laser output that two frequencys multiplication and quadruple obtain 320 ~ 340nm, then Ultra-Violet Laser is incided to the deep ultraviolet direct frequency doubling device that is placed in vacuum plant system and obtain all solid state deep ultraviolet laser of 160～170nm.This invention has the advantages such as light path is simple, system stability, compact conformation, can be applied to the fields such as scientific research apparatus, accurate manufacture.
The object of the present invention is achieved like this:
Direct frequency doubling provided by the invention is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, and it comprises Ultra-Violet Laser pumping source 1, deep ultraviolet direct frequency doubling device and vacuum plant system; The full solid state ultraviolet laser pump arrangement that described Ultra-Violet Laser pumping source is 320～340nm wavelength, this full solid state ultraviolet laser pump arrangement is realized the Ultra-Violet Laser of 320～340nm wavelength by the quadruple of 1.28～1.36 microns of fundamental frequency light; Described deep ultraviolet direct frequency doubling device forms by realizing the deep ultraviolet frequency-doubling crystal of 160～170nm deep ultraviolet output and the first matching materials and the second matching materials by direct frequency doubling; Described deep ultraviolet frequency-doubling crystal is for can realize the laminar crystal that 320～340nm direct frequency doubling position matches, and the octonary position that described deep ultraviolet frequency-doubling crystal can be realized 1.28～1.36 microns of laser matches; Described the first matching materials and the second matching materials are rectangular prism, and described deep ultraviolet frequency-doubling crystal optical cement is on the inclined edge surfaces of described the first matching materials and the second matching materials; 320～340nm Ultra-Violet Laser that the first matching materials obtuse angle cutting angle meets incident impinges perpendicularly on after the first matching materials and reenters and be mapped in deep ultraviolet direct frequency doubling crystal, meets the phase-matching angle degree of deep ultraviolet frequency-doubling crystal; The second matching materials meets 160～170nm deep ultraviolet laser high permeability, and its obtuse angle cutting angle meets 160～170nm deep ultraviolet laser perpendicular to this second matching materials right angle face outgoing; Described vacuum plant system is comprised of sealed shell of tank, the incidence window and the outgoing window that are placed on described sealed shell of tank tank skin, vacuumizes or filling inert gas in described sealed shell of tank; Described deep ultraviolet direct frequency doubling device is placed in the sealed shell of tank of vacuum tank system, guarantees that deep ultraviolet direct frequency doubling device carries out frequency multiplication in vacuum or inert gas environment, and the deep ultraviolet laser preventing is absorbed by air or steam; The Ultra-Violet Laser that Ultra-Violet Laser pumping source sends enters sealed shell of tank from incidence window, right-angle side vertical incidence by the first matching materials, then by deep ultraviolet frequency-doubling crystal, carry out direct frequency doubling, after the second matching materials spatially naturally separately, the outgoing window that 160～170nm deep ultraviolet laser arranges from its direction of propagation is exported for the 160～170nm deep ultraviolet laser producing and remaining Ultra-Violet Laser.
Described ultraviolet pumping source is comprised of fundamental frequency light source, two frequency multiplication generators and quadruple generator; 1.28～1.36 microns of fundamental frequency light of described fundamental frequency light source produce two double-frequency lasers by two frequency multiplication generators, and two double-frequency lasers produce laser of quadruple by quadruple generator; Two double-frequency lasers are produced by two frequencys multiplication in two frequencys multiplication or chamber outside chamber.
Described fundamental frequency light source is comprised of at least one gain apparatus, the resonator device, Q switched element and the polarizing component that consist of basic frequency laser high reflective mirror A and part outgoing mirror B; Gain apparatus is profile pump or end pumping structure; Gain medium is Nd:YAG, Nd:YAP, Nd:YLF, Nd:GGG, Nd:YVO
4or Nd:GdVO
4produce 1.28～1.36 micron wave length laser mediums; The material of gain medium is crystal or pottery.
Described deep ultraviolet direct frequency doubling crystal is KBBF group crystal.
Described KBBF group crystal is KBBF crystal or RBBF crystal.
When described KBBF group crystal is KBBF crystal, octonary cutting angle that matches of its 1.28～1.36 microns of laser is 70.65 °～90 °.
The first described matching materials is SiO
2, its obtuse angle cutting angle is 81.4 °～81.5 °.
The second described matching materials is CaF
2, its obtuse angle cutting angle is 71.79 °～71.78 °.
Direct frequency doubling of the present invention is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, its technology path is the octonary scheme of 1.28～1.36 microns of all solid state basic frequency lasers, with respect to existing acquisition 160～170nm deep ultraviolet laser method, as the mixing schemes such as titanium precious stone laser and other wavelength lasers and frequency, frequency multiplication, optical parameter output Ultra-Violet Laser direct frequency doubling scheme etc., have that light path is simple, system is reliable, efficiency is high, compact conformation, can be practical etc. feature, the fields such as scientific research ahead of the curve, Precision Machining manufacture have irreplaceable effect.
Accompanying drawing explanation
Below, in conjunction with the accompanying drawings and embodiments the present invention is described in detail:
Fig. 1 is the structural representation that direct frequency doubling of the present invention is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm;
Fig. 2 is the apparatus structure schematic diagram that the direct frequency doubling of embodiment 1 is realized all solid state deep ultraviolet laser of wavelength 160～170nm;
Fig. 3 is the apparatus structure schematic diagram that the direct frequency doubling of embodiment 2 is realized all solid state deep ultraviolet laser of wavelength 160～170nm.
Embodiment
Fig. 1 is the structural representation of apparatus of the present invention; Direct frequency doubling provided by the invention is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, and it comprises Ultra-Violet Laser pumping source 1, deep ultraviolet direct frequency doubling device 2 and vacuum plant system 3; Ultra-Violet Laser pumping source 1 is the all-solid-state ultraviolet laser 1-1 of wave-length coverage in 320～340nm, and 1-2 is Ultra-Violet Laser light beam focus device; Deep ultraviolet direct frequency doubling device 2 is comprised of deep ultraviolet frequency-doubling crystal 2-1, the first matching materials 2-2-1 and the second matching materials 2-2-2; Deep ultraviolet frequency-doubling crystal 2-1 is laminar crystal, can meet 320～340nm Ultra-Violet Laser frequency multiplication phase-matching angle degree, and the first matching materials 2-2-1 and the second matching materials 2-2-2 are right-angle prism; Deep ultraviolet frequency-doubling crystal 2-1 optical cement is on the inclined edge surfaces of the first matching materials 2-2-1 and the second matching materials 2-2-2, incident Ultra-Violet Laser is coupled in deep ultraviolet frequency-doubling crystal after the first matching materials 2-2-1, and the second matching materials 2-2-2 exports and realize deep ultraviolet laser with separated on Ultra-Violet Laser space by deep ultraviolet laser coupling; Vacuum tank system 3 by sealed shell of tank 3-1, be placed in incidence window 3-2-1 on sealed shell of tank 3-1 tank skin and outgoing window 3-2-2, residue Ultra-Violet Laser gatherer 3-3 form; In sealed shell of tank 3-1, vacuumize or filling inert gas, deep ultraviolet direct frequency doubling device 2 is placed in the sealed shell of tank 3-1 of vacuum tank system 3, guarantee that deep ultraviolet direct frequency doubling device 2 carries out deep ultraviolet frequency multiplication and produces 160～170nm deep ultraviolet laser in vacuum or inert gas environment, prevent that deep ultraviolet laser from being absorbed by air or steam; The Ultra-Violet Laser that all-solid-state ultraviolet laser 1-1 produces enters the sealed shell of tank 3-1 of vacuum tank system 3 after light beam focus device 1-2 from incidence window 3-2-1, right-angle side vertical incidence by the first matching materials 2-2-1, by deep ultraviolet frequency-doubling crystal, 2-1 carries out direct frequency doubling, produces 160～170nm deep ultraviolet laser;
160～170nm the deep ultraviolet laser producing after the second matching materials 2-2-1 perpendicular to right-angle side outgoing; Due to dispersion reason, deep ultraviolet laser and remaining Ultra-Violet Laser spatially separate naturally; The outgoing window 3-2-2 outgoing that deep ultraviolet laser arranges on the direction of propagation, remaining Ultra-Violet Laser is collected by laser gatherer 3-3.
Below, in conjunction with specific embodiments, object of the present invention, technical scheme and advantage are described in detail more.
Embodiment 1
Press Fig. 2, the present embodiment is a kind ofly by profile pump laser crystal, to realize 1.28～1.36 microns of laser-based frequency lasers and export, by two frequency multiplication generators outside chamber, obtain two double-frequency lasers again, two double-frequency lasers obtain ultraviolet laser of quadruple, i.e. all solid state ultraviolet pumping source through quadruple generator; Ultra-Violet Laser incides the device that direct frequency doubling in deep ultraviolet frequency doubling device is realized all solid state deep ultraviolet laser of wavelength 160～170nm.
Resonant cavity, Q switched element 1-1-4 and polarizing component 1-1-5 that 1.28～1.36 microns of laser-based frequency laser 1-1 consist of two semiconductor side pumped laser gain module 1-1-1-1 and 1-1-1-2,0 degree 1319nm high reflective mirror 1-1-2-1 and outgoing mirror 1-1-2-2 form; Two semiconductor side pumped laser gain module serial connections, the middle 90 degree gyrotropi crystal 1-1-3 that place are for depolarization compensation; Q switched element 1-1-4 is for generation of high-peak power laser pulse; Outgoing mirror 1-1-2-2 is to the transmission of 1319nm part, to obtain high average output power.
Two frequency multiplication generators are comprised of two frequency multiplication nonlinear optical crystal 1-4, condenser lens 1-3-1, two frequency-doubling crystal 1-4 are II class noncritical phase matching lbo crystal (θ=0 °, φ=0 °), coupling temperature is about 42 ° of C, and condenser lens 1-3-1 is two-sided plating 1319nm anti-reflection film; Quadruple generator is comprised of quadruple nonlinear optical crystal 1-5, condenser lens 1-3-2, and quadruple nonlinear optical crystal 1-5 is I class phase matched lbo crystal (θ=90 °, φ=49.6 °), and condenser lens 1-3-2 is two-sided plating 660nm anti-reflection film; The rearmounted beam splitter 1-6-1 of two frequency multiplication generators and laser garbage collector 1-7-1, beam splitter 1-6-1 is the high anti-and 660nm anti-reflection film systems of 45 ° of 1319nm of two-sided plating, for separating fundamental frequency 1319nm laser and two frequency multiplication 660nm laser, laser garbage collector 1-7-1 is for collecting the 1319nm laser of separating; The rearmounted beam splitter 1-6-2 of quadruple generator and laser garbage collector 1-7-2, beam splitter 1-6-2 is the high anti-and 330nm anti-reflection film systems of 45 ° of 660nm of two-sided plating, for separating 660nm laser and quadruple 330nm laser, laser garbage collector 1-7-2 is for collecting the 660nm laser of separating.
330 Ultra-Violet Lasers enter in vacuum plant system 3-1 after light beam turn-back element 1-6-3 and light beam concentrating element 1-2, after the first matching materials 2-2-1 of deep ultraviolet direct frequency doubling device, be coupled to and in deep ultraviolet nonlinear optical crystal 2-1, carry out octonary and obtain 165nm deep ultraviolet laser, 165nm deep ultraviolet laser is exported after by the second matching materials 2-2-2; Deep ultraviolet nonlinear optical crystal 2-1 is KBBF crystal, and thick 2mm, at KBBF top and bottom difference optical cement index-matching material 2-2-1 and 2-2-2; The first matching materials 2-2-1 is the SiO with higher light injury threshold
2, the second matching materials 2-2-2 is the CaF that deep ultraviolet transmitance is higher
2coupling output as 165nm deep ultraviolet laser.While CaF
2refractive index is optically thinner medium and be optically denser medium for 165nm for Ultra-Violet Laser 330nm, and two-beam is spatially separated automatically; The phase-matching angle of the 330nm frequency multiplication of KBBF crystal is 76.96 °, the first matching materials 2-2-1SiO
2thereby obtuse angle cutting angle be 81.43 ° and guarantee the vertical surface feeding sputterings of 330nm Ultra-Violet Laser.Deep ultraviolet direct frequency doubling device is placed in vacuum plant system, in order to guarantee that direct frequency doubling device carries out in vacuum or inert gas environment, prevents that the 165nm deep ultraviolet laser of frequency multiplication generation is by absorptions such as air, steam.
Vacuum plant system is comprised of vacuum tank 3-1, incident basic frequency laser window 3-2-1 and deep ultraviolet laser output window 3-2-2, residue basic frequency laser gathering-device 3-3, sniffer 3-4.Vacuum tank 3-1 processes to guarantee its vacuum degree by stainless steel, relevant position is left to the anti-reflection window 3-2-1 of incident fundamental frequency light 330nm with to the anti-reflection output window of deep ultraviolet 165nm, is respectively used to basic frequency laser 330nm incident and the outgoing of 165nm deep ultraviolet laser; For preventing that the basic frequency laser of frequency multiplication not from disturbing, affecting the detection of deep ultraviolet laser, the fundamental frequency 330nm laser of frequency multiplication is not collected by laser gatherer 3-3; On deep ultraviolet 165nm Laser Detecting Set 34, place power meter for measuring deep ultraviolet laser power output.
Regulate ultraviolet basic frequency laser to focus on the parameters such as size with a tight waist, incident power, make deep ultraviolet 165nm power output the highest; Remove deep ultraviolet 165nm sniffer, 165nm deep ultraviolet laser is outputed in application apparatus.
Embodiment 2
Press Fig. 3, the present embodiment is that a kind of low quantum loss realizes 1.28～1.36 microns of laser-based frequency lasers by end pumped laser crystal and vibrates, by two frequency multiplication generators in chamber, obtain two double-frequency lasers again and export, two double-frequency lasers obtain ultraviolet laser of quadruple through quadruple generator; Ultra-Violet Laser incides the device that direct frequency doubling in deep ultraviolet frequency doubling device is realized all solid state deep ultraviolet laser of wavelength 160～170nm.
Low quantum loss end pumping Nd:YLF laser crystal, low quantum loss technology can reduce laser medium thermal effect, obtains more high power basic frequency laser output; V-shaped cavity structure intracavity frequency doubling 1313nm fundamental frequency light obtains the red laser of two frequency multiplication 656.5m.End pumping structure is coupling fiber 885nm semiconductor laser 1-1-1-1, optical fiber transmission medium 1-1-1-2 and coupled lens 1-1-1-3; V-shaped cavity is comprised of high reflective mirror 1-1-2-1, refrative mirror 1-1-2-2 and rear end mirror 1-1-2-3, high reflective mirror 1-1-2-1 is to 1313nm plating 0 degree high-reflecting film, refrative mirror 1-1-2-2 plating 6 degree are high anti-and to 656.5nm high transmittance film to 1313nm, and rear end mirror 1-1-2-3 plating 0 degree is to 1313 and the two high-reflecting films of 656.5nm; Laser crystal 1-1-3 is the Nd:YLF of doping 0.6%; Q switched element 1-1-4 realizes high-peak power pulse laser; Polarizing component 1-1-5 makes the starting of oscillation of σ direction 1313nm direction, suppresses the starting of oscillation of π direction 1321nm laser; Two frequency multiplication 1-1-6 crystal are II class noncritical phase matching lbo crystal (θ=0 °, φ=0 °).
The red laser of 656.5nm of output is by quadruple system 1-3,1-4 similar to Example 1, and quadruple frequency crystal 1-4 is the lbo crystal (θ=90 °, φ=50.2 °) of the critical phase matched of I class, obtains the output of 328.25nm Ultra-Violet Laser.
The 328.25nm Ultra-Violet Laser obtaining enters into vacuum system 3-1 by focusing system similar to Example 1, by KBBF crystal, realizes frequency multiplication output deep ultraviolet 164.1nm laser.Difference is that the phase-matching angle of KBBF is 78.47 °, and the obtuse angle of prism-coupled device is 81.43 °.
Obviously; the present invention also can have other various embodiments; in the situation that not deviating from spirit of the present invention and essence thereof; those of ordinary skill in the art are when making according to the present invention various corresponding changes and modification, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (8)
1. direct frequency doubling is realized a device for all solid state deep ultraviolet laser of wavelength 160～170nm, and it comprises Ultra-Violet Laser pumping source, deep ultraviolet direct frequency doubling device and vacuum plant system; The full solid state ultraviolet laser pump arrangement that described Ultra-Violet Laser pumping source is 320～340nm wavelength, this full solid state ultraviolet laser pump arrangement is realized the Ultra-Violet Laser of 320～340nm wavelength by the quadruple of 1.28～1.36 microns of fundamental frequency light; Described deep ultraviolet direct frequency doubling device forms by realizing the deep ultraviolet frequency-doubling crystal of 160～170nm deep ultraviolet output and the first matching materials and the second matching materials by direct frequency doubling; Described deep ultraviolet frequency-doubling crystal is for can realize the laminar crystal that 320～340nm direct frequency doubling position matches, and the octonary position that described deep ultraviolet frequency-doubling crystal can be realized 1.28～1.36 microns of laser matches; Described the first matching materials and the second matching materials are rectangular prism, and described deep ultraviolet frequency-doubling crystal optical cement is on the inclined edge surfaces of described the first matching materials and the second matching materials; 320～340nm Ultra-Violet Laser that the first matching materials obtuse angle cutting angle meets incident impinges perpendicularly on after the first matching materials and reenters and be mapped in deep ultraviolet direct frequency doubling crystal, meets the phase-matching angle degree of deep ultraviolet frequency-doubling crystal; The second matching materials meets 160～170nm deep ultraviolet laser high permeability, and its obtuse angle cutting angle meets 160～170nm deep ultraviolet laser perpendicular to this second matching materials right angle face outgoing; Described vacuum plant system is comprised of sealed shell of tank, the incidence window and the outgoing window that are placed on described sealed shell of tank tank skin, vacuumizes or filling inert gas in described sealed shell of tank; Described deep ultraviolet direct frequency doubling device is placed in the sealed shell of tank of vacuum tank system, guarantees that deep ultraviolet direct frequency doubling device carries out frequency multiplication in vacuum or inert gas environment, and the deep ultraviolet laser preventing is absorbed by air or steam; The Ultra-Violet Laser that Ultra-Violet Laser pumping source sends enters sealed shell of tank from incidence window, right-angle side vertical incidence by the first matching materials, then by deep ultraviolet frequency-doubling crystal, carry out direct frequency doubling, after the second matching materials spatially naturally separately, the outgoing window that 160～170nm deep ultraviolet laser arranges from its direction of propagation is exported for the 160～170nm deep ultraviolet laser producing and remaining Ultra-Violet Laser.
2. direct frequency doubling according to claim 1 is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, it is characterized in that, described Ultra-Violet Laser pumping source is comprised of fundamental frequency light source, two frequency multiplication generators and quadruple generator; 1.28～1.36 microns of fundamental frequency light of described fundamental frequency light source produce two double-frequency lasers by two frequency multiplication generators, and two double-frequency lasers produce laser of quadruple by quadruple generator; Two double-frequency lasers are produced by two frequencys multiplication in two frequencys multiplication or chamber outside chamber.
3. direct frequency doubling according to claim 2 is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, it is characterized in that, described fundamental frequency light source is comprised of at least one gain apparatus, the resonator device, Q switched element and the polarizing component that consist of basic frequency laser high reflective mirror A and part outgoing mirror B; Gain apparatus is profile pump or end pumping structure; Gain medium is for producing Nd:YAG, Nd:YAP, Nd:YLF, Nd:GGG, the Nd:YVO of 1.28～1.36 micron wave length laser
4or Nd:GdVO
4; The material of gain medium is crystal or pottery.
4. direct frequency doubling according to claim 1 is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, it is characterized in that, described deep ultraviolet direct frequency doubling crystal is KBBF group crystal.
5. direct frequency doubling according to claim 4 is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, it is characterized in that, described KBBF group crystal is KBBF crystal or RBBF crystal.
6. direct frequency doubling according to claim 5 is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, it is characterized in that, when described KBBF group crystal is KBBF crystal, octonary cutting angle that matches of its 1.28～1.36 microns of laser is 70.65 °～90 °.
7. direct frequency doubling according to claim 1 is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, it is characterized in that, the first described matching materials is SiO
2, its obtuse angle cutting angle is 81.4 °～81.5 °.
8. direct frequency doubling according to claim 1 is realized the device of all solid state deep ultraviolet laser of wavelength 160～170nm, it is characterized in that, the second described matching materials is CaF
2, its obtuse angle cutting angle is 71.79 °～71.78 °.
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| CN104104006B (en) * | 2013-04-02 | 2017-04-19 | 中国科学院理化技术研究所 | Device for generation of high-power vacuum ultraviolet laser by direct frequency multiplication and method thereof |
| CN103868603A (en) * | 2014-02-18 | 2014-06-18 | 中国科学院理化技术研究所 | Device and method for measuring vacuum ultraviolet laser linewidth |
| CN106825943B (en) * | 2017-02-23 | 2018-10-09 | 江苏大学 | Applied to PLC wafer lasers cutter device and with the picosecond laser of the device |
| CN110535021B (en) * | 2018-05-24 | 2021-02-19 | 中国科学院理化技术研究所 | Wavelength width tuning deep ultraviolet laser system with unchanged direction |
| CN110492347B (en) * | 2019-08-28 | 2020-07-17 | 中国人民解放军国防科技大学 | Deep ultraviolet angle-resolved photoelectron spectroscopy light source with spatial resolution capability |
| CN111146670A (en) * | 2019-12-11 | 2020-05-12 | 中国科学院福建物质结构研究所 | Ultraviolet pulse laser |
| CN111965916B (en) * | 2020-08-05 | 2022-06-24 | 中国科学院理化技术研究所 | Deep ultraviolet optical frequency comb generating device |
| CN113206431B (en) * | 2021-04-21 | 2022-09-02 | 中国科学院上海光学精密机械研究所 | Device for generating deep ultraviolet laser based on optical frequency recombination upconversion |
| US20220399694A1 (en) * | 2021-06-11 | 2022-12-15 | Kla Corporation | Tunable duv laser assembly |
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| JP特开2000-213983A 2000.08.04 |
| Qianjin Cui et al..2-μm singly resonant optical parameter oscillator.《Chinese Optics Letters》.2009,第7卷(第6期), |
| Stable operation of 4mW nanoseconds radiation at 177.3 nm by second harmonic generation in KBe2BO3F2 crystals;Zhimin Wang et al.;《Optics Express》;20091026;第17卷(第22期);第20021-20032页 * |
| Zhimin Wang et al..Stable operation of 4mW nanoseconds radiation at 177.3 nm by second harmonic generation in KBe2BO3F2 crystals.《Optics Express》.2009,第17卷(第22期),第20021-20032页. |
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| CN102324689A (en) | 2012-01-18 |
| CN102957083A (en) | 2013-03-06 |
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