CN102956724A - Monocrystalline solar cell - Google Patents
Monocrystalline solar cell Download PDFInfo
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- CN102956724A CN102956724A CN2012104933085A CN201210493308A CN102956724A CN 102956724 A CN102956724 A CN 102956724A CN 2012104933085 A CN2012104933085 A CN 2012104933085A CN 201210493308 A CN201210493308 A CN 201210493308A CN 102956724 A CN102956724 A CN 102956724A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to a monocrystalline solar cell, which comprises an insulating base plate, transparent adhesive layers and monocrystalline layers, wherein the numbers of the transparent adhesive layers and the monocrystalline layers are respectively two, the second transparent adhesive layer is arranged on the insulating base plate, the second monocrystalline layer is arranged on the second transparent adhesive layer, the first transparent adhesive layer is arranged on the second monocrystalline layer, the first monocrystalline layer is arranged on the first transparent adhesive layer, and the side surfaces of the first monocrystalline layer and the second monocrystalline layer, back to a light source, are respectively provided with an electric leading-out wire.
Description
Technical field
The invention belongs to the photovoltaic solar field, refer to especially a kind of monocrystaline silicon solar cell.
Background technology
Solar cell take silicon as main material according to its crystallinity, is divided into monocrystaline silicon solar cell, polysilicon solar cell, non-crystal silicon solar cell.
Wherein monocrystaline silicon solar cell only is different in the technique of machine silicon crystallization process from the difference of polysilicon solar cell.Monocrystalline silicon adopts crystallization to lift and forms, and polysilicon is that mold forms.Amorphous silicon is to utilize plasma CVD method, utilizes discharge to decompose in gas phase silane gas, and the hydrogenated silicon film at substrate formation crystalloid forms thus.
Although the film of amorphous silicon is thin with respect to monocrystalline silicon, be generally 1 micron photoelectric conversion result that just can reach real usefulness, its photoelectric conversion efficiency is less than 10%, and the photoelectric conversion efficiency of monocrystalline silicon can reach 15% utilization ratio.
Summary of the invention
The purpose of this invention is to provide a kind of monocrystaline silicon solar cell, a kind of solar photovoltaic conversion efficient that can improve is tried to gain solar cell.
The present invention is achieved by the following technical solutions:
Monocrystaline silicon solar cell includes insulated substrate, transparent bonding glue-line and monocrystalline silicon layer; Described transparent bonding glue-line and monocrystalline silicon layer respectively include two-layer, be provided with second layer transparent bonding glue-line on the described insulated substrate, be provided with second layer monocrystalline silicon layer on the second layer transparent bonding glue-line, be provided with ground floor transparent bonding glue-line at second layer monocrystalline silicon layer, be provided with the ground floor monocrystalline silicon layer at ground floor transparent bonding glue-line; Be provided with electricity in the side back to light source of ground floor monocrystalline silicon layer and second layer monocrystalline silicon layer and draw wire.
Described insulated substrate is resinae substrate or category of glass substrate.
Described ground floor transparent bonding glue-line and second layer transparent bonding glue-line are that same material or different materials all can, consisting of of described transparent adhesive-layer, silicones, acrylic resin, ester ring type acrylic resin, liquid crystal polymer, a kind of in Merlon and the PETG.
Described ground floor monocrystalline silicon layer is identical with the thickness of second layer monocrystalline silicon layer, is the 0.1-3.5 micron.
The beneficial effect that the present invention compares with prior art is:
Because the light utilization efficiency of monocrystalline silicon layer is about 15%, and reflection or refraction effect can occur by monocrystalline silicon in remaining light source, by technical scheme of the present invention, the light source that is not utilized is utilized in second layer monocrystalline silicon layer after by ground floor monocrystalline silicon layer and the transparent adhesive-layer of ground floor for the second time, the light transfer ratio of second layer monocrystalline silicon is 6-8%, can effectively utilize like this solid space of solar cell, improve the generating efficiency of unit are.
Description of drawings
Fig. 1 is monocrystaline silicon solar cell schematic cross-section of the present invention.
Embodiment
Below describe technical scheme of the present invention in detail by specific embodiment, should be understood that, following specific embodiment only can be used for explaining the present invention and can not be interpreted as to be limitation of the present invention.
With reference to shown in Figure 1, at first prepare insulated substrate 11, the selection of substrate does not have special requirement, what select in the present embodiment is the substrate that resin is made, face hydrogen injecting ion or noble gas ion with second layer monocrystalline silicon layer 14, and bonding with substrate 11 with scribbling second layer transparent bonding glue-line 15 at this face, then remove second layer monocrystalline silicon layer 14 to form monocrystalline silicon membrane by machinery, thickness is 2.5 microns, monocrystalline silicon membrane thickness can be between the 0.1-3.5 micron in other embodiments, face hydrogen injecting ion or noble gas ion with ground floor monocrystalline silicon layer 12, and bonding with second layer monocrystalline silicon membrane with scribbling ground floor transparent bonding glue-line 13 at this face, then remove the first monocrystalline silicon layer 12 to form the first monocrystalline silicon membrane by machinery.Ground floor monocrystalline silicon membrane thickness is 2.5 microns.The face that carries out Implantation at every one deck monocrystalline silicon membrane is connected with the wire of drawing for the electric current that produces.
Described ground floor transparent bonding glue-line and second layer transparent bonding glue-line are that same material or different materials all can, consisting of of described transparent adhesive-layer, silicones, acrylic resin, ester ring type acrylic resin, liquid crystal polymer, a kind of in Merlon and the PETG.
The monocrystaline silicon solar cell that makes by the technical program, the utilance of light source by the ground floor monocrystalline silicon membrane time is about 15%, then have that a large amount of light passes the ground floor monocrystalline silicon membrane and the ground floor glue line enters second layer monocrystalline silicon membrane, the second monocrystalline silicon membrane can produce opto-electronic conversion under the irradiation of light.
Although illustrated and described embodiments of the invention, for the ordinary skill in the art, be appreciated that without departing from the principles and spirit of the present invention and can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is by claims and be equal to and limit.
Claims (4)
1. monocrystaline silicon solar cell includes insulated substrate, transparent bonding glue-line and monocrystalline silicon layer; It is characterized in that: described transparent bonding glue-line and monocrystalline silicon layer respectively include two-layer, be provided with second layer transparent bonding glue-line on the described insulated substrate, be provided with second layer monocrystalline silicon layer on the second layer transparent bonding glue-line, be provided with ground floor transparent bonding glue-line at second layer monocrystalline silicon layer, be provided with the ground floor monocrystalline silicon layer at ground floor transparent bonding glue-line; Be provided with electricity in the side back to light source of ground floor monocrystalline silicon layer and second layer monocrystalline silicon layer and draw wire.
2. monocrystaline silicon solar cell according to claim 1, it is characterized in that: described insulated substrate is resinae substrate or category of glass substrate.
3. monocrystaline silicon solar cell according to claim 1, it is characterized in that: described ground floor transparent bonding glue-line and second layer transparent bonding glue-line are that same material or different materials all can, consisting of of described transparent adhesive-layer, silicones, acrylic resin, ester ring type acrylic resin, liquid crystal polymer, a kind of in Merlon and the PETG.
4. monocrystaline silicon solar cell according to claim 1, it is characterized in that: described ground floor monocrystalline silicon layer is identical with the thickness of second layer monocrystalline silicon layer, is the 0.1-3.5 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104933085A CN102956724A (en) | 2012-11-27 | 2012-11-27 | Monocrystalline solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104933085A CN102956724A (en) | 2012-11-27 | 2012-11-27 | Monocrystalline solar cell |
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| CN102956724A true CN102956724A (en) | 2013-03-06 |
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| CN2012104933085A Pending CN102956724A (en) | 2012-11-27 | 2012-11-27 | Monocrystalline solar cell |
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Citations (9)
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| CN1874007A (en) * | 2006-05-04 | 2006-12-06 | 唐春芳 | Solar battery in high efficiency |
| CN101262029A (en) * | 2007-03-07 | 2008-09-10 | 信越化学工业株式会社 | Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell |
| CN101604657A (en) * | 2009-06-19 | 2009-12-16 | 上海新傲科技股份有限公司 | The method for preparing silicon substrate on the double-buried layer insulator |
| CN101740651A (en) * | 2009-12-11 | 2010-06-16 | 东方日升新能源股份有限公司 | Laminated structure and laminating technology of solar panel component |
| CN102064221A (en) * | 2010-11-15 | 2011-05-18 | 北京航空航天大学 | Double-sided solar battery component |
| US20110203652A1 (en) * | 2009-06-29 | 2011-08-25 | Auria Solar Co., Ltd. | Thin film solar cell and manufacturing method thereof |
| JP2011216920A (en) * | 2011-08-05 | 2011-10-27 | Shin-Etsu Chemical Co Ltd | Single-crystal silicon solar cell |
| CN102361042A (en) * | 2011-11-01 | 2012-02-22 | 天津天环光伏太阳能有限公司 | High-power solar panel |
| CN102446995A (en) * | 2011-12-09 | 2012-05-09 | 中山大学 | Hybrid solar battery module and manufacturing method thereof |
-
2012
- 2012-11-27 CN CN2012104933085A patent/CN102956724A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1874007A (en) * | 2006-05-04 | 2006-12-06 | 唐春芳 | Solar battery in high efficiency |
| CN101262029A (en) * | 2007-03-07 | 2008-09-10 | 信越化学工业株式会社 | Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell |
| CN101604657A (en) * | 2009-06-19 | 2009-12-16 | 上海新傲科技股份有限公司 | The method for preparing silicon substrate on the double-buried layer insulator |
| US20110203652A1 (en) * | 2009-06-29 | 2011-08-25 | Auria Solar Co., Ltd. | Thin film solar cell and manufacturing method thereof |
| CN101740651A (en) * | 2009-12-11 | 2010-06-16 | 东方日升新能源股份有限公司 | Laminated structure and laminating technology of solar panel component |
| CN102064221A (en) * | 2010-11-15 | 2011-05-18 | 北京航空航天大学 | Double-sided solar battery component |
| JP2011216920A (en) * | 2011-08-05 | 2011-10-27 | Shin-Etsu Chemical Co Ltd | Single-crystal silicon solar cell |
| CN102361042A (en) * | 2011-11-01 | 2012-02-22 | 天津天环光伏太阳能有限公司 | High-power solar panel |
| CN102446995A (en) * | 2011-12-09 | 2012-05-09 | 中山大学 | Hybrid solar battery module and manufacturing method thereof |
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Application publication date: 20130306 |