CN102956713A - Thin film transistor, manufacturing method thereof, array substrate and display device - Google Patents

Thin film transistor, manufacturing method thereof, array substrate and display device Download PDF

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CN102956713A
CN102956713A CN2012104012757A CN201210401275A CN102956713A CN 102956713 A CN102956713 A CN 102956713A CN 2012104012757 A CN2012104012757 A CN 2012104012757A CN 201210401275 A CN201210401275 A CN 201210401275A CN 102956713 A CN102956713 A CN 102956713A
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grid
protective layer
semiconductor layer
layer
substrate
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CN102956713B (en
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刘翔
王刚
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US14/057,728 priority patent/US9502570B2/en
Priority to EP13189461.0A priority patent/EP2722891B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display device which are used for improving the electrical performance of the thin film transistor and improving the picture quality of pictures displayed by the display device. The thin film transistor provided by the invention comprises a substrate, and a grid electrode, a source electrode, a drain electrode, a semiconductor layer and a semiconductor layer protection layer which are all formed on the substrate; and the thin film transistor further comprises a first grid electrode protection layer formed between the grid electrode and the semiconductor layer, and a grid electrode isolation layer formed between the first grid protection layer and the semiconductor layer. The semiconductor layer protection layer is located between the semiconductor layer and the source electrode and between the semiconductor layer and the drain electrode; and the source electrode and the drain electrode are connected with the semiconductor layer by virtue of via holes.

Description

A kind of thin-film transistor and preparation method thereof, array base palte and display unit
Technical field
The present invention relates to the Display Technique field, relate in particular to a kind of thin-film transistor and preparation method thereof, array base palte and display unit.
Background technology
In the Display Technique field, panel display apparatus, such as liquid crystal display (Liquid Crystal Display, LCD) and display of organic electroluminescence (Organic Light Emitting Display, OLED), because it is light, thin, low-power consumption, high brightness, and the advantage such as high image quality, consequence occupied in the flat panel display field.
Especially the panel display apparatus of high-resolution and high image quality is favored by people.At present, the delay of picture signal becomes one of key factor of restriction high-resolution and high image quality panel display apparatus.Particularly, the delay of picture signal is mainly determined by signal resistance and the relevant capacitor that the grid on the array base palte and gate line determine.When controlling grid scan line is opened, the pixel charging, because the delay of picture signal, some pixel charging is insufficient, causes the brightness irregularities of image display frame, has a strong impact on the display quality of image.The resistance that reduces grid and gate line can reduce the delay of picture signal, improves the image quality of image.
At present, the method for the resistance of reduction grid and gate line is: adopt the lower metal Cu of resistance to make grid and scan line (also being gate line).But there is following shortcoming:
The Cu metal easily spreads, and is easy to be diffused in gate protection layer, semiconductor layer or the passivation layer, has seriously affected the performance of thin-film transistor (Thin Film Transistor, TFT).Had now before deposition Cu metal gates and gate line film and deposit first one deck insulation barrier, stop the Cu ion to gate insulator and semiconductor layer diffusion, but in follow-up heating process, the activity of Cu ion increases, can pass through insulation barrier and be penetrated into semiconductor layer, have a strong impact on the TFT performance, so that the image quality of image is poorer, even the normal operation of destruction TFT.
TFT and manufacture method on the existing array base palte can cause the TFT hydraulic performance decline, the problem that image quality is relatively poor.
Summary of the invention
The embodiment of the invention provides a kind of thin-film transistor and preparation method thereof, array base palte and display unit, in order to improve the performance of TFT, improves the image quality of image.
For achieving the above object, the array base palte that the embodiment of the invention provides comprises:
Substrate, be formed on grid, source electrode, drain electrode, semiconductor layer and semiconductor layer protective layer on the described substrate; And
Be formed on the first grid protective layer between described grid and semiconductor layer on the described substrate, and the gate isolation between described first grid protective layer and described semiconductor layer; The semiconductor layer protective layer is between semiconductor layer and source electrode and drain electrode.
The embodiment of the invention provides a kind of array base palte, comprises the said film transistor.
The embodiment of the invention provides a kind of display unit, comprises described array base palte.
The manufacture method of the thin-film transistor that the embodiment of the invention provides comprises:
Form the process of grid, source electrode, drain electrode and semiconductor layer, and the process that forms first grid protective layer, gate isolation and semiconductor layer protective layer;
Described first grid protective layer is between described grid and semiconductor layer, and described gate isolation is between described first grid protective layer and described semiconductor layer, and described semiconductor layer protective layer is between semiconductor layer and source electrode and drain electrode.
The thin-film transistor that the embodiment of the invention provides; be provided with first grid protective layer and gate isolation between grid and the semiconductor layer; the grid that is formed by metal; metal ion is stopped by gate isolation, can not enter semiconductor layer, and the performance of semiconductor layer can not be affected; and; the resistance that is made by metal is less, and delayed image signal is less, and image quality is higher.
Description of drawings
The bottom gate type array base-plate structure schematic top plan view that Fig. 1 provides for first embodiment of the invention;
Fig. 2 be TFT shown in Figure 1 structure A-B to schematic cross-section;
Fig. 3 is the structural representation that TFT shown in Figure 2 has the second grid protective layer;
Fig. 4 is that TFT shown in Figure 2 has the first via hole and the second via structure schematic diagram;
Fig. 5 is the structural representation that array base palte shown in Figure 2 has pixel electrode;
Fig. 6 is the structural representation that TFT shown in Figure 5 has the 3rd via hole;
Fig. 7 is the structural representation that TFT shown in Figure 6 has passivation layer;
Fig. 8 is the structural representation that array base palte shown in Figure 7 has public electrode and resilient coating;
The top gate type TFT structural representation that Fig. 9 provides for second embodiment of the invention;
Figure 10 is the manufacture method schematic flow sheet of the bottom gate type TFT shown in real the first embodiment of the present invention;
The manufacture method schematic flow sheet of the top gate type TFT that Figure 11 provides for second embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of thin-film transistor and preparation method thereof, array base palte and display unit, in order to improve the performance of TFT, improves the image quality of image.
The thin-film transistor that the embodiment of the invention provides comprises:
Substrate, be formed on grid, source electrode, drain electrode, semiconductor layer and semiconductor layer protective layer on the substrate; And
Be formed on the first grid protective layer between grid and semiconductor layer on the substrate, the gate isolation between described first grid protective layer and semiconductor layer;
The semiconductor layer protective layer is between semiconductor layer and source electrode and drain electrode, and source electrode links to each other with semiconductor layer by the via hole on the semiconductor layer protective layer respectively with drain electrode.
Described grid is made by the copper metal, be diffused into semiconductor layer for fear of copper ion, semiconductor layer is polluted, cause the TFT hydraulic performance decline, between semiconductor layer and grid, form gate isolation, gate isolation can stop that the copper ion of the grid of copper metal enters semiconductor layer, improves the image quality of image.
The thin-film transistor TFT that the embodiment of the invention provides can be bottom gate type or top gate type structure, specifies bottom gate type or the top gate type TFT that the embodiment of the invention provides below by accompanying drawing.
Embodiment one: bottom gate type TFT.
Fig. 1 is the TFT schematic top plan view, Fig. 2 be TFT shown in Figure 1 A-B to sectional view.
Referring to Fig. 2, the TFT that the embodiment of the invention provides comprises:
Substrate 1, be formed on the grid 2 on the substrate 1;
Be formed on the first grid protective layer 4 that is positioned on the substrate 1 on the grid 2;
Be formed on the gate isolation 5 that is positioned on the substrate 1 on the first grid protective layer 4;
Be formed on the semiconductor layer 7 that is positioned on the substrate 1 on the gate isolation 5;
Be formed on the semiconductor layer protective layer 13 that is positioned on the substrate 1 on the semiconductor layer 7;
Be formed on the source electrode 8 and the drain electrode 9 that are positioned on the substrate 1 on the semiconductor layer protective layer 13.
Preferably, referring to Fig. 3, the TFT that the embodiment of the invention provides also comprises: second grid protective layer 6, second grid protective layer 6 is between gate isolation 5 and semiconductor layer 7.Second grid protective layer 6 plays the effect of insulated gate electrode 2 and semiconductor layer 7.
Referring to Fig. 4, source electrode 8 links to each other with the second via hole 15 by the first via hole 14 on the semiconductor layer protective layer 13 respectively with drain electrode 9.
In the process of concrete making TFT, such as Fig. 1, can be in the process of making grid 2, the gate line 3 that will link to each other with grid is simultaneously made.In the process of making source electrode 8 and drain electrode 9, can simultaneously the data wire 10 that links to each other with source electrode 8 be made, save technological process.
Wherein, grid 2 and gate line 3 are made by the copper metal.Correspondingly, can when making gate isolation, on gate line, also make corresponding gate line separator, specifically can describe in detail in the back.
Gate line 3 and data wire 10 are embodied among Fig. 1, are not embodied among Fig. 2 and Fig. 3.The first via hole 14 and the second via hole 15 embody in Fig. 4.
The gate isolation 5 that the embodiment of the invention provides can be insulating barrier such as silica or silicon nitride film layer, also can be conductive layer, such as transparent metal oxide ITO rete.Preferably, be better than with the effect of insulating barrier as gate isolation with the isolation effect of conductive layer as gate isolation.
The semiconductor layer protective layer 13 that the embodiment of the invention provides can be single layer structure such as metal oxide rete or metal nitride film layers, also can be double-decker perhaps, such as the stack of metal oxide rete and metal nitride film layers.
Preferably, gate isolation 5 is conductive layer, for example can be transparency conducting layer ITO, and conductive layer stops that the ability of copper ion is higher than the ability of insulating layer blocks copper ion far away.
The thin-film transistor that the embodiment of the invention provides can but be not limited to be applicable in the array base palte.
Take array base palte as example, the array base palte that the embodiment of the invention provides comprises: a plurality of TFT and the gate line and the data wire that link to each other with each TFT.
Described array base palte also comprises: pixel electrode; The relation of pixel electrode 11 and TFT as shown in Figure 5,
In specific implementation process, pixel electrode 11 arranges with layer with gate isolation 5.
As shown in Figure 6, array base palte also comprises: the 3rd via hole 12, the three via holes 12 that connect pixel electrode 11 and drain electrode 9.
Preferably, the making material of pixel electrode 11 and gate isolation 5 is identical, can be transparency conducting layer indium tin oxide ITO rete.
In specific implementation process, pixel electrode 11 and gate isolation 5 use commaterial to be made, can in a composition technique, form pixel electrode 11 and gate isolation 5 like this, that is to say, with respect to prior art, when making pixel electrode 11, make gate isolation 5, do not increase technological process.
Preferably, for so that the TFT on the array base palte and gate line and data wire etc. are not subjected to impact or the destruction of extraneous factor, referring to Fig. 7, described TFT also comprises: passivation layer 16;
Passivation layer 16 is formed on and is positioned on the TFT in outermost source electrode 8 and the drain electrode 9.
Passivation layer 16 can be the insulating barrier of inorganic material formation or the insulating barrier that organic material forms.
Preferably, passivation layer 16 is made by organic resin material.Organic resin can be benzocyclobutene (BCB), also can be other organic photo materials.The organic resin inorganic material hardness of comparing is less, more is conducive to pair array substrate outermost layer and plays smooth effect, is conducive to the ideal alignment of the liquid crystal molecule between color membrane substrates and the array base palte.
What the first grid protective layer played is the effect of insulated gate electrode and gate isolation; in specific implementation process; the thickness of the first grid protective layer second grid protective layer of comparing will be done thicker as far as possible; first grid protective layer and second grid protective layer play the effect of insulated gate electrode and semiconductor layer; in order to improve the contact interface quality between semiconductor layer and the second grid protective layer; it is more thinner that the thickness of second grid protective layer will be done, and guarantees quality of forming film, improves the performance of TFT.
That is to say, the thickness of second grid protective layer is less than the thickness of first grid protective layer.
Preferably, described substrate is glass substrate, quartz or plastic base.
In order to improve the tack of substrate and each rete, referring to Fig. 8, the TFT that the embodiment of the invention provides also comprises:
Resilient coating 17 is between substrate 1 and grid 2.
Preferably, resilient coating 17 between substrate 1 and grid 2, and covers whole substrate.
Preferably the array base palte that provides of the embodiment of the invention also comprises: public electrode referring to Fig. 8, is public electrode 18 and the position relationship of TFT, and public electrode 18 is positioned on the passivation layer 16 zone corresponding with pixel electrode 11.
Public electrode 18 can be tabular or slit-shaped, and so-called slit-shaped namely is provided with many slits in the position corresponding with the pixel cell viewing area, to improve the transmitance of light, realizes better image display effect.
The slit-shaped public electrode preferably is applicable to senior super dimension field switch (ADS, Advanced Super Dimension Switch) technology, and high aperture-corresponding display floater of senior super dimension field switch (H-ADS) technology etc.The public electrode that the embodiment of the invention provides can but be not limited to be integrated among ADS LCD or the H-ADS LCD.
Particularly, under the ADS pattern, the electric field that the electric field that produces by gap electrode edge in the same plane and gap electrode layer and plate electrode interlayer produce forms multi-dimensional electric field, make in the liquid crystal cell between gap electrode, all aligned liquid-crystal molecules can both produce rotation directly over the electrode, thereby improved the liquid crystal operating efficiency and increased light transmission efficiency.
Embodiment two: top gate type TFT.
Similar with above-mentioned bottom gate type TFT structure, difference is, grid is different with the residing position of semiconductor layer, and referring to Fig. 9, described array base palte comprises:
Substrate 1;
Be formed on source electrode 8 and drain electrode 9 on the substrate 1;
Be formed on the semiconductor layer protective layer 13 that is positioned on the substrate 1 in source electrode 8 and the drain electrode 9;
Be formed on the semiconductor layer 7 that is positioned on the substrate 1 on the semiconductor layer protective layer 13;
Be formed on the gate isolation 5 that is positioned on the substrate 1 on the semiconductor layer 7;
Be formed on the first grid protective layer 4 that is positioned on the substrate 1 on the gate isolation 5;
Be formed on the grid 2 that is positioned on the substrate 1 on the first grid protective layer 4;
Wherein, grid 2 is made by the copper metal.
Preferably, described TFT also comprises: be formed on the second grid protective layer 6 between semiconductor layer 7 and gate isolation 5 on the substrate 1.
Need to prove, in the process that forms grid, form simultaneously gate line; In the process that forms source electrode and drain electrode, form simultaneously the data wire that links to each other with source electrode, gate line and data wire do not embody in Fig. 8.
Preferably, referring to Fig. 9, the array base palte of the top gate type TFT that embodiment two provides also comprises: pixel electrode 11, and pixel electrode 11 and gate isolation 5 arrange with layer, and pixel electrode 11 links to each other with drain electrode 9 by via hole.
Referring to Fig. 9, the top gate type TFT that embodiment two provides also comprises: passivation layer 16 and resilient coating 17; Passivation layer 16 is formed on and is positioned on the substrate on the grid, is not subjected to extraneous destruction for the protection of TFT; Resilient coating 17 is between source electrode and drain electrode place layer and substrate.
The array base-plate structure of other structures and bottom gate type TFT is similar, repeats no more here.
The below illustrates the manufacture method of the array base palte that the embodiment of the invention provides from the technological process aspect.
The manufacture method integral body of the array base palte that the embodiment of the invention provides comprises:
Form the process of grid and gate line, source electrode and data wire, drain electrode and semiconductor layer, and the process that forms first grid protective layer, gate isolation, second grid protective layer and semiconductor layer protective layer;
Described grid and gate line are made by the copper metal;
Described first grid protective layer, second grid protective layer and gate isolation are between described grid and semiconductor layer; described gate isolation is between described first grid protective layer and second grid protective layer; and regional corresponding with grid and gate line place in the vertical direction, described semiconductor layer protective layer is between semiconductor layer and source electrode and drain electrode.
Referring to Figure 10, the method for making the array base palte of bottom gate type TFT comprises:
S11, employing composition technique form grid at substrate;
S12, employing composition technique form the first grid protective layer at described grid;
S13, employing composition technique form gate isolation at described first grid protective layer;
S14, employing composition technique form semiconductor layer in described gate isolation;
S15, employing composition technique form the semiconductor layer protective layer at described semiconductor layer;
S16, employing composition technique form source electrode and drain electrode at described semiconductor layer protective layer.
Described composition technique refers to make mask, exposure, development, the photoetching of figure, the processes such as etching.
For instance, adopt composition technique to form gate electrode at substrate, be specially: at first deposit gate electrode layer at substrate, then be coated with photoresist, utilize mask plate that photoresist is exposed and form photoetching agent pattern with development treatment, then utilize this photoetching agent pattern as etching mask, remove corresponding electrode layer by techniques such as etchings, and remove remaining photoresist, finally form gate electrode figure at substrate.
Between step S13 and step S14, also comprise: adopt composition technique to form the second grid protective layer in described gate isolation; The described semiconductor layer of step S14 is formed on the described second grid protective layer.
Preferably, before step S11, also comprise: form one deck resilient coating at described substrate.
Preferably, step S13 also comprises: when described employing composition technique forms gate isolation, also form the pixel electrode that is positioned at same layer with this gate isolation, described gate isolation and pixel electrode adopt a composition technique to be made.
Preferably, after step S16, also comprise: employing composition technique forms the passivation layer that is positioned in the outermost source electrode of thin-film transistor and the drain electrode.
Referring to Figure 11, make top gate type TFT method and comprise:
S21, employing composition technique form source electrode and drain electrode at substrate;
S22, employing composition technique form the semiconductor layer protective layer at the substrate that is being formed with described source electrode and drain electrode;
S23, employing composition technique form semiconductor layer at the described substrate that is formed with the semiconductor layer protective layer;
S24, employing composition technique form gate isolation at the described substrate that is formed with semiconductor layer;
S25, employing composition technique form the first grid protective layer at the described substrate that is formed with gate isolation;
S26, employing composition technique form grid at the described substrate that is formed with the first grid protective layer.
Between step S23 and step S24, also comprise: adopt composition technique to form the second grid protective layer at described semiconductor layer; The described gate isolation of step S24 is formed on the described second grid protective layer.
Preferably, before step S21, also comprise: form one deck resilient coating at described substrate.
Preferably, step S24 also comprises: when described employing composition technique forms gate isolation, also form the pixel electrode that is positioned at same layer with this gate isolation, described gate isolation and pixel electrode adopt a composition technique to be made.
Preferably, after step S26, also comprise: adopt composition technique to form the passivation layer that is positioned on the outermost grid of thin-film transistor.
Need to prove, the TFT that the embodiment of the invention provides can be that non-crystalline silicon tft also can be metal oxide TFT.
The below illustrates the concrete technology flow process take the array base palte of making bottom gate type metal oxide TFT shown in Figure 8 as example;
Array substrate manufacturing method shown in the embodiment of the invention comprises:
Step 1: the forming process of resilient coating, grid and gate line on the substrate.
At first in order to increase the adhesive force of Cu and glass, at first adopt the method for sputter or thermal evaporation at transparent glass substrate or quartz base plate, form the resilient coating that one deck covers whole substrate, this resilient coating can be to be formed by metals such as molybdenum Mo, titanium Ti, Mo alloy, Ti alloy, Cu alloys, and its thickness is about
Figure BDA00002279169700091
Then, adopt the method for sputter or thermal evaporation at the substrate that is formed with resilient coating, deposit thickness is
Figure BDA00002279169700092
Copper Cu metal level, form grid and gate line by single exposure development, photoetching and etching technics.The grid that forms and the pattern of gate line and the position is same as the prior art repeats no more here.
Step 2: the forming process of first grid protective layer on the substrate.
Substrate at completing steps one by chemical vapour deposition technique (PECVD) successive sedimentation thickness is
Figure BDA00002279169700101
Insulating barrier, this insulating barrier is the insulating barrier of first grid protective layer to be formed; Particularly, this first grid protective layer can be silica or silicon nitride layer.Silica or silicon nitride layer can be that oxide, nitride or oxynitrides and reacting gas form by chemical vapour deposition technique.Described reacting gas can be silane SiH 4, ammonia NH 3, nitrogen N 2Mixture, perhaps be silicon dichloride SiH 2Cl 2, ammonia NH 3, and nitrogen N 2Mixture.For example: the power that can control deposition first grid protective layer is 2300W ~ 2500W, SiH 4Gas flow is 2200sccm ~ 2600sccm, ammonia NH 3And nitrogen N 2Gas flow be respectively 12000sccm ~ 15000sccm; Deposition pressure is 2500mtorr ~ 2700mtorr.
Step 3: the forming process of gate isolation and pixel electrode on the substrate.
On the substrate that is formed with the first grid protective layer, by sputtering method successive sedimentation thickness be
Figure BDA00002279169700102
Figure BDA00002279169700103
Transparency conducting layer forms gate isolation and pixel electrode by single exposure development chemical wet etching technique;
Gate isolation is positioned at the position corresponding with grid and gate line, and gate isolation projected area in vertical direction is not less than the grid projected area.
Preferably, gate isolation projected area in vertical direction is not less than grid and gate line projected area in vertical direction.
Pixel electrode and gate isolation arrange with layer, and be same as the prior art, repeats no more here.
Array base palte shown in the accompanying drawing only is schematic diagram, does not represent the relative size of grid and gate line and gate isolation.
Described transparency conducting layer can be ITO or indium-zinc oxide IZO, perhaps is other transparent metal oxides.
This step is passed through once graphical technique and is formed pixel electrode and gate isolation; do not increase technological process with respect to prior art; but realized the isolation features of Cu ion; this gate isolation is better than the gate protection layer to the iris action of Cu ion; this structure can stop the diffusion of Cu ion well; especially the diffusion of Cu ion under the high-temperature technology has improved the performance of TFT.
Step 4: the forming process of second grid protective layer.
Similar with the process that forms described first grid protective layer, on the substrate of completing steps three, form the second grid protective layer by the successive sedimentation of PECVD method.
Preferably; in order to promote the performance of TFT, the deposition rate of second grid protective layer is lower, the quality of film is good, can form good interface with semiconductor layer; the thickness of second grid protective layer is less than the first grid protective layer thickness, and the second grid protective layer thickness is about
Figure BDA00002279169700111
Can realize in the following way, for example, compare and realize the first grid protective layer, second grid protective layer of the present invention is achieved as follows:
By PECVD method successive sedimentation thickness be
Figure BDA00002279169700112
The second grid protective layer, deposition power is 550W～750W; SiH 4Gas flow is 1400sccm ~ 1600sccm; Ammonia NH 3And nitrogen N 2Gas flow be respectively 7000sccm ~ 8500sccm; Deposition pressure is 2500mtorr ~ 2700mtorr.The deposition rate of second grid protective layer is less than the deposition rate of first grid protective layer.The thickness of second grid protective layer is
Figure BDA00002279169700113
Be equivalent to or less than the first grid protective layer thickness.
The ratio of each parameter of above-mentioned realization first grid protective layer and second grid protective layer only is to want to illustrate that the deposition rate of second grid protective layer is lower than the deposition rate of first grid protective layer; in specific implementation process, be not limited to adopt the parameters such as above-mentioned deposition power or deposition pressure.
Step 5: the forming process of substrate upper semiconductor layer.
By sputtering method successive sedimentation thickness be
Figure BDA00002279169700114
The metal oxide rete, by single exposure development, photoetching, etching technics forms semiconductor layer.
Described metal oxide can be indium gallium zinc oxide IGZO, hafnium indium-zinc oxide HIZO, indium-zinc oxide IZO, amorphous indium-zinc oxide a-InZnO, amorphous zinc oxide doped oxyfluoride ZnO:F, indium-doped tin oxide oxide In 2O 3: Sn, amorphous indium oxide doping molybdenum oxide In 2O 3: Mo, chromium tin-oxide Cd 2SnO 4, amorphous zinc oxide adulterated al oxide ZnO:Al, amorphous titanium oxide doping niobium oxide TiO 2: Nb, chromium tin-oxide Cd-Sn-O or other metal oxides.
Step 6: the forming process of substrate upper semiconductor layer protective layer.
On the substrate of completing steps five, by chemical meteorology deposition method PECVD method deposit thickness be
Figure BDA00002279169700121
Figure BDA00002279169700122
The metal oxide rete, by single exposure develop, photoetching, etching technics forms the semiconductor layer protective layer that covers semiconductor layer.
Described semiconductor layer protective layer can be silica or silicon nitride.Described silica or silicon nitride can be to be formed by oxide, nitride or oxynitrides and reacting gas, and the reacting gas that the oxide of silicon is corresponding is SiH 4, N 2O, the reacting gas that nitride or oxynitrides are corresponding is SiH 4, NH 3, N 2Mixture or SiH 2Cl 2, NH 3, N 2Mixture.
The semiconductor layer protective layer also can use alundum (Al2O3) Al 2O 3, perhaps be silica or silicon nitride or alundum (Al2O3) Al 2O 3The barrier structure of the multilayer that forms.
Step 7: the first via hole, the second via hole on the substrate, the forming process of the 3rd via hole.
On the substrate that is formed with the semiconductor layer protective layer; by exposure imaging, chemical wet etching technique; form the second via hole that connects source electrode and semiconductor layer, form the 3rd via hole that connects drain electrode and semiconductor layer, form the first via hole that connects gate isolation and drain electrode.
Step 8: source electrode, drain electrode on the substrate, and the forming process of data wire.
Method by sputter or thermal evaporation is being formed with the first via hole, the second via hole, and on the substrate of the 3rd via hole, formation a layer thickness is
Figure BDA00002279169700123
Metallic diaphragm forms source electrode, drain electrode by single exposure development, chemical wet etching technique, and the data wire that links to each other with source electrode.
Described metallic diaphragm can be crome metal Cr, tungsten W, Titanium Ti, metal tantalum Ta, metal molybdenum Mo etc., or the alloy of above-mentioned at least two kinds of metals.Can be that the single-layer metal layer also can be the multiple layer metal layer.
Form described source electrode, drain electrode, and after the data wire, source electrode is connected with semiconductor layer by the second via hole, described drain electrode is connected with semiconductor by the 3rd via hole, and described drain electrode is connected with pixel electrode by the first via hole.
Step 9: the forming process of passivation layer on the substrate.
On the substrate of completing steps eight by PECVD method deposit thickness be Passivation layer, passivation layer can be selected oxide, nitride or oxynitrides, reacting gas corresponding to the oxidation of silicon can be SiH 4, N 2O; The corresponding reacting gas of nitride or oxynitrides is SiH 4, NH 3, N 2Or SiH 2Cl 2, NH 3, N 2Passivation layer can use Al 2O 3Rete, the perhaps barrier structure of bilayer or multilayer.
In addition, in this process, can also pass through exposure imaging, chemical wet etching technique formation gate pad territory Gate PAD and source electrode and drain bond pad territory SD PAD zone, be convenient to the subsequent conditioning circuit plate and link to each other with data wire with gate line.
Particularly, the forming process of passivation layer is: by being formed with source electrode, drain electrode, and applying a layer thickness on the substrate of data wire and be about
Figure BDA00002279169700131
Organic resin, organic resin can be benzocyclobutene (BCB), also can be other organic photo material,
Coating a layer thickness is about
Figure BDA00002279169700132
Organic resin, develop by single exposure, and after the chemical wet etching technique, form Gate PAD and the SD PAD of outer peripheral areas on the array base palte.
Step 10: the forming process of public electrode on the substrate.
Thickness is about on the deposition of the method by sputter or thermal evaporation on the substrate of completing steps nine
Figure BDA00002279169700134
The transparency conducting layer rete.
Develop by single exposure, and form public electrode after the chemical wet etching technique.Described public electrode can be ITO or IZO, perhaps other transparent metal oxide.
The array base palte technological process and the above-mentioned steps one that form top gate type metal oxide TFT are similar for the array base palte technological process that forms bottom gate type metal oxide TFT to step 10, repeat no more here.
The embodiment of the invention also provides a kind of display unit, comprises above-mentioned array base palte, and this display unit can be the display unit such as liquid crystal panel, liquid crystal display, LCD TV, oled panel, OLED display, OLED TV or Electronic Paper.
One of this display unit is exemplified as liquid crystal indicator, and wherein, array base palte and counter substrate are opposite each other to form liquid crystal cell, are filled with liquid crystal material in liquid crystal cell.This counter substrate for example is color membrane substrates.Thereby the pixel electrode of each pixel cell of array base palte is used for applying electric field and the degree of the rotation of liquid crystal material is controlled is carried out display operation.In some instances, this liquid crystal display also is included as array base palte backlight backlight is provided.
Another of this display unit is exemplified as organic electroluminescent (OLED) display unit, wherein, the thin-film transistor of each pixel cell of array base palte connects the male or female of Organnic electroluminescent device, is used for driving luminous organic material luminous to carry out display operation.
In sum, the embodiment of the invention provides a kind of thin-film transistor and preparation method thereof, array base palte and display unit, use gate isolation isolated gate copper ion to enter semiconductor layer, especially used conductive layer as gate isolation, can guarantee the service behaviour of TFT, improve the image quality of image.And, when making gate isolation, make pixel electrode layer, save the array base palte fabrication processing.The thickness of second grid protective layer is less than the thickness of first grid protective layer, and the quality of forming film of second grid protective layer is high, improves the contact interface of second grid protective layer and semiconductor layer, improves the TFT performance.Form the first via hole, the second via hole, the 3rd via hole saving technological process by one-time process.At last, passivation layer uses organic resin, plays the flatness layer effect, is more conducive to the Liquid Crystal Molecules Alignment on it, uses simultaneously organic resin to form Gate PAD and SD PAD.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.

Claims (22)

1. a thin-film transistor is characterized in that, comprising:
Substrate, be formed on grid, source electrode, drain electrode, semiconductor layer and semiconductor layer protective layer on the described substrate; And
Be formed on the first grid protective layer between described grid and semiconductor layer on the described substrate, and the gate isolation between described first grid protective layer and described semiconductor layer; The semiconductor layer protective layer is between semiconductor layer and source electrode and drain electrode.
2. thin-film transistor according to claim 1 is characterized in that, described gate isolation is overlapping in the upright projection on the substrate and the upright projection of described grid on substrate.
3. thin-film transistor according to claim 1 is characterized in that, described gate isolation is conductive layer.
4. thin-film transistor according to claim 1 is characterized in that, described thin-film transistor also comprises: the second grid protective layer, described second grid protective layer is between described gate isolation and semiconductor layer.
5. thin-film transistor according to claim 4 is characterized in that,
Described grid is positioned on the described substrate;
Described first grid protective layer is positioned on the described grid;
Described gate isolation is positioned on the described first grid protective layer;
Described second grid protective layer is positioned on the described gate isolation;
Described semiconductor layer is positioned on the described second grid protective layer;
Described semiconductor layer protective layer is positioned on the described semiconductor layer;
Described source electrode and drain electrode are positioned on the described semiconductor layer protective layer.
6. thin-film transistor according to claim 4 is characterized in that,
Described source electrode and drain electrode are positioned on the described substrate;
Described semiconductor layer protective layer is positioned in described source electrode and the drain electrode;
Described semiconductor layer is positioned on the described semiconductor layer protective layer;
Described second grid protective layer is positioned on the described semiconductor layer;
Described gate isolation is positioned on the described second grid protective layer;
Described first grid protective layer is positioned on the described gate isolation;
Described grid is positioned on the described first grid protective layer.
7. thin-film transistor according to claim 1 is characterized in that, described thin-film transistor also comprises: resilient coating, described resilient coating are positioned at a side of each rete of thin-film transistor to be formed on the described substrate.
8. thin-film transistor according to claim 5 is characterized in that, described thin-film transistor also comprises: passivation layer, described passivation layer are positioned in described source electrode and the drain electrode.
9. thin-film transistor according to claim 6 is characterized in that, described thin-film transistor also comprises: passivation layer, described passivation layer is positioned on the described grid.
10. thin-film transistor according to claim 1 is characterized in that, the thickness of described second grid protective layer is less than the thickness of first grid protective layer.
11. an array base palte is characterized in that, comprises the described thin-film transistor of the arbitrary claim of claim 1 to 10.
12. array base palte according to claim 11 is characterized in that, described array base palte also comprises: pixel electrode; Described pixel electrode and described gate isolation arrange with layer, and link to each other with described drain electrode by via hole.
13. a display unit is characterized in that, comprises claim 11 or 12 described array base paltes.
14. the manufacture method of a thin-film transistor is characterized in that, comprising:
Form the process of grid, source electrode, drain electrode and semiconductor layer, and the process that forms first grid protective layer, gate isolation and semiconductor layer protective layer;
Described first grid protective layer is between described grid and semiconductor layer, and described gate isolation is between described first grid protective layer and described semiconductor layer, and described semiconductor layer protective layer is between semiconductor layer and source electrode and drain electrode.
15. method according to claim 14 is characterized in that, forms the process of grid, source electrode, drain electrode and semiconductor layer, and the process that forms first grid protective layer and gate isolation, is specially:
Adopt composition technique to form grid at substrate;
Adopt composition technique to form the first grid protective layer at the substrate that is formed with described grid;
Adopt composition technique to form gate isolation at the substrate that is formed with described first grid protective layer;
Adopt composition technique to form semiconductor layer at the substrate that is formed with described gate isolation;
Adopt composition technique to form the semiconductor layer protective layer at the substrate that is formed with described semiconductor layer;
Adopt composition technique to form source electrode and drain electrode at the described substrate that is formed with the semiconductor layer protective layer.
16. method according to claim 14 is characterized in that, forms the process of grid, source electrode, drain electrode and semiconductor layer, and the process that forms first grid protective layer and gate isolation, is specially:
Adopt composition technique to form source electrode and drain electrode at substrate;
Adopt composition technique to form the semiconductor layer protective layer at the substrate that is formed with described source electrode and drain electrode;
Adopt composition technique to form semiconductor layer at the described substrate that is formed with the semiconductor layer protective layer;
Adopt composition technique to form gate isolation at the described substrate that is formed with semiconductor layer;
Adopt composition technique to form the first grid protective layer at the described substrate that is formed with gate isolation;
Adopt composition technique to form grid at the described substrate that is formed with the first grid protective layer.
17. method according to claim 15 is characterized in that, after forming gate isolation, forms before the semiconductor layer, also comprises:
Adopt composition technique to form the second grid protective layer in described gate isolation; Described semiconductor layer is formed on the described second grid protective layer.
18. method according to claim 16 is characterized in that, after forming gate isolation, forms before the grid, also comprises:
Adopt composition technique to form the second grid protective layer in described gate isolation; Described grid is formed on the described second grid protective layer.
19. method according to claim 14; it is characterized in that; in the process that forms grid, source electrode, drain electrode and semiconductor layer, and form before the process of first grid protective layer, gate isolation and semiconductor layer protective layer, also comprise: form one deck resilient coating at described substrate.
20. method according to claim 14, it is characterized in that, when described employing composition technique forms gate isolation, also form the pixel electrode that is positioned at same layer with this gate isolation, described gate isolation and pixel electrode adopt a composition technique to be made.
21. method according to claim 15 is characterized in that, also comprises:
Adopt composition technique to form passivation layer at the substrate of described formation source electrode and drain electrode.
22. method according to claim 16 is characterized in that, also comprises:
Adopt composition technique to form passivation layer at the substrate of described formation grid.
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