CN102955267A - Silicon-based integrated chirped grating tunable optical delay line - Google Patents
Silicon-based integrated chirped grating tunable optical delay line Download PDFInfo
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- CN102955267A CN102955267A CN2012104445611A CN201210444561A CN102955267A CN 102955267 A CN102955267 A CN 102955267A CN 2012104445611 A CN2012104445611 A CN 2012104445611A CN 201210444561 A CN201210444561 A CN 201210444561A CN 102955267 A CN102955267 A CN 102955267A
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Abstract
The invention discloses a silicon-based integrated chirped grating tunable optical delay line, which comprises two heavily-doped regions on a silicon-on-insulator substrate and an optical waveguide apodized grating of an intrinsic region between the two heavily-doped regions. The two heavily-doped regions are p type or n type heavily-doped regions or p type and p type heavily-doped regions, and form a p-i-n junction or p-i-p structural form. The optical waveguide apodized grating consists of a silicon-based material with a high refractive index difference, the conventional silicon waveguide is arranged on the middle part of the optical waveguide apodized grating, and a grating formed by staggering silicon saw-teeth and air gaps is arranged on the lateral part of the optical waveguide apodized grating. Metal electrodes are deposited on the p type heavily-doped region and the n type heavily-doped region, and are used for connection with an external circuit for voltage loading. The chirp of the grating can be changed by changing external voltage to dynamically regulate the delay of an optical signal. The optical delay line has the advantages of easiness for machining, high adjustment speed, wide tunable range and the like.
Description
Technical field
The present invention relates to the integrated device in optical communication technique field, particularly a kind of silica-based integrated chirp grating variable optical delay line.
Background technology
Variable optical delay line is the important devices during optical communication network, all-optical information are processed.In optical communication network, especially in the light packet switching network, variable optical delay line can provide by the demand of system and carry out same channel is never competed in packet header processing reconciliation with the user network conflict problem certain time delay, thereby improves the handling capacity of network node, reduces packet loss; Aspect the light signal processing, variable optical delay line can strengthen the communication capacity of main frame, increases the performance of whole system and realizes efficient restructural optics signal processing etc.The method of traditional realization variable optical delay line is to adopt chirped fiber grating, change the position of light signal reflection by the wavelength that changes the carrier wave light source, thereby realize the adjustable delay to light signal, this scheme needs synchronously adjustable lasing light emitter and adjustable wave filter, and systematic comparison is complicated.With chirped fiber grating specific wavelength is realized the light variable delay line, can adopt and regulate the refractive index that temperature, stress and magnetic field etc. change fiber grating, same so that the difference of the reflection position of the light signal of specific wavelength realizes adjustable delay.These two kinds of chirped fiber gratings realize that the scheme of variable optical delay line has the shortcomings such as required device volume is large, reaction is slow, time resolution rate variance.
In recent years, along with the development of photoelectron technology and semiconducter process, the research that silicon based photon is learned at home and abroad makes noticeable improvements.Also have a variety ofly in the scheme of silica-based realization variable optical delay line, mainly comprise all-pass filter (APF), optical waveguide coupled resonator cavity (CROW) and photonic crystal optical waveguides (PhCW) etc.The area that all-pass filter (APF) and optical waveguide coupled resonator cavity (CROW) scheme need when realizing large adjustable delay is larger, and loss is larger; Photonic crystal optical waveguides (PhCW) is although space required is little, and high to the processing technology requirement, loss is large.Therefore, the emphasis that utilize that integrated Bragg grating is low in silica-based realization loss, volume is little, high bandwidth and governing speed variable delay line has soon become people's research in nearest 2 years.Through existing technical literature retrieval is found, people such as Ivano Giuntoni 2009 are at OPTICSEXPRESS (Vol.17, No.21) propose in the paper of delivering on " Tunable Bragg reflectors on silicon-on-insulator rib waveguides " to realize chirp grating by the cycle that changes grating on silica-based, change the refractive index of silicon by thermo-optic effect, thereby so that the variation of the light signal reflection position of specific wavelength realizes the tunable optical time-delay.2012, this group is at OPTICSLETTERS (Vol.20, No.10) propose in the paper of delivering on " Continuously tunable delay line based on SOI tapered Bragg gratings " to pass through at fixing grating in the cycle, change the effective refractive index realization chirp grating that duct width changes waveguide, utilize thermo-optic effect to realize that fixed wave length light signal retardation is adjustable, finished the maximum-delay amount of the light signal 450ps of 25Gb/s.The comprehensive method of having reported realizes that with grating tunable optical postpones on silica-based, mainly be to realize chirp grating by cycle or the duct width of accurate change grating.Very high to the requirement of processing technology like this, so cost is also higher.In addition, at present all be method by thermo-optic effect realize postponing adjustable, regulations speed is slower.Therefore, the present invention proposes to come dynamic adjustments chirped grating amount to realize the scheme of light delay by design p-i-n or p-i-p structure, and is simple in structure, can use the adjusting that thermo-optic effect or plasma dispersion effect postpone.
Summary of the invention
The object of the invention is to for above-mentioned the deficiencies in the prior art, a kind of silica-based integrated chirp grating variable optical delay line is provided, realize chirped grating adjusting, the scheme that postpones to obtain tunable optical by design p-i-n or p-i-p structure.P-i-n or p-i-p knot that this scheme changes by a design intrinsic region (i district) width linearity, the intrinsic i district that grating is embedded into knot, carrier concentration or the different character of resistance value of utilizing same electrical to depress the silicon waveguide of different intrinsic region width realize chirp grating, thereby realize the adjusting of light delay by the size that changes voltage.
Technical solution of the present invention is as follows:
A kind of silica-based integrated chirp grating variable optical delay line, its characteristics are, consist of the optical waveguide apodization grating be included in the intrinsic region between two heavily doped regions and this two heavily doped regions in the silicon-on-insulator substrate, described two heavily doped regions are p-type and N-shaped heavily doped region or p-type and p-type heavily doped region, form p-i-n knot or p-i-p version, described optical waveguide apodization grating is that the silica-base material by high index-contrast consists of, the centre is conventional silicon waveguide, the grating of alternate formation is stitched for silicon sawtooth and air in the next door, depositing metal electrode on described p-type heavily doped region and N-shaped heavily doped region is used for linking to each other with on-load voltage with external circuit.
The top covering of described optical waveguide apodization grating is monox.
Described optical waveguide apodization grating, the width of its silicon sawtooth successively decreases from the centre to the waveguide two ends, the width of middle conventional silicon waveguide increases progressively from the centre to the waveguide two ends, smoothly links to each other the strong reflection that causes owing to sudden change when avoiding grating and conventional waveguide-coupled with conventional silicon waveguide at two ends.
Described SOI light waveguide raster, the width of its silicon sawtooth and middle conventional waveguide mates mutually, so that the centre wavelength in each cycle of grating is a definite value, to obtain maximum reflection efficiency.
Described p-i-n version: described apodization grating is in intrinsic i district fully, p-type and N-shaped heavily doped region are in respectively the both sides in intrinsic i district, the width in middle intrinsic i district changes along the grating vertical linear, the intrinsic region of different in width, under identical voltage, the concentration of carrier injection is different, causes the refractive index of silicon different by plasma dispersion effect, forms chirp grating;
Described p-i-p version: the apodization grating is in intrinsic i district fully, two p-type heavily doped regions are in respectively the both sides of intrinsic region, the width of intermediate intrinsic region changes along the grating vertical linear equally, the intrinsic region of different in width, resistance value is different, and under identical voltage, temperature raises different, cause the refractive index of silicon different by thermo-optic effect, form chirp grating.
The doping content of described p-type or N-shaped heavily doped region is 10
18-10
21/ cm
3Between, to form good Ohmic contact.
Described p-type or N-shaped heavily doped region from the width of grating between the hundreds of nanometer is to several microns.Compared with prior art, advantage of the present invention is that the formation of chirp grating is not to rely on the width of cycle of accurately changing grating or grating waveguide to form, but by among the p-i-n or p-i-p knot that non-chirp grating are embedded into an intrinsic region width linear change, warble by plasma dispersion effect or thermo-optic effect dynamic formation behind the making alive, therefore technological requirement is reduced, regulate rapidly, can realize dynamic adjustable Integrated Light lag line.
Description of drawings
Fig. 1 is the silica-based integrated chirp grating variable optical delay line structural representation of the present invention, and wherein: figure (a) is the structural representation of p-i-n, and figure (b) is the structural representation of p-i-p.
Fig. 2 is the silica-based integrated chirp grating variable optical delay line grating waveguide wide variety figure of the embodiment of the invention.
Fig. 3 is the reflection strength spectral line of the silica-based integrated chirp grating variable optical delay line of the present invention when not having making alive and delay spectral line, and wherein: figure (a) is the reflection strength spectral line, and figure (b) is for postponing spectral line.
Fig. 4 be the silica-based integrated chirp grating variable optical delay line of the present invention when adopting the p-i-n structure the sub-concentration of different voltage download stream along grating distribution plan longitudinally.
Reflection strength spectral line and delay spectral line when Fig. 5 is the silica-based integrated chirp grating variable optical delay line employing p-i-n structure of the present invention under the different voltages, wherein: figure (a) is the reflection strength spectral line, schemes (b) for postponing spectral line.
Fig. 6 be the silica-based integrated chirp grating variable optical delay line of the present invention when adopting the p-i-p structure under the different voltages variations in refractive index along grating distribution plan longitudinally.
Reflection strength spectral line and delay spectral line when Fig. 7 is the silica-based integrated chirp grating variable optical delay line employing p-i-p structure of the present invention under the different voltages, wherein: figure (a) is the reflection strength spectral line, schemes (b) for postponing spectral line.
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
A kind of silica-based integrated variable delay line mainly comprises apodization grating, p-type and N-shaped heavily doped region or p-type and p-type heavily doped region and electrode based on silicon-on-insulator (Silicon-On-Insulator, SOI) optical waveguide.It is characterized in that embedding based on the apodization grating of SOI optical waveguide the intrinsic i district of p-i-n or p-i-p, the width in this intrinsic i district changes along the grating vertical linear, and p-type links to each other with external circuit with the N-shaped heavily doped region.When adopting the p-i-n structure, the electrode two ends add forward voltage, and carrier injection is to intrinsic i district, and the carrier concentration of intrinsic region changes, because plasma dispersion effect has changed the refractive index of silicon waveguide in the grating, causes the drift of reflected light wavelength; When adopt be the p-i-p structure time, intrinsic i district is equivalent to a resistance, when tie at p-i-p add certain voltage after, resistance produces heat, the temperature of intrinsic region will raise, owing to thermo-optic effect, the refractive index of grating waveguide also can change.The intrinsic region width at the vertical diverse location of grating place is different, and the resistance of intrinsic region is also just different with the carrier concentration change, and under identical voltage, the refractive index of grating silicon waveguide is vertically tapering off or increasing progressively distribution, and amplitude of variation depends on impressed voltage.Like this, former non-chirp grating capable of dynamic is adjusted to chirp grating, and the retardation of the light signal of specific wavelength is by the voltage flexible.
Described apodization grating is that the silica-base material by high index-contrast consists of, and the centre is conventional silicon waveguide, and the next door adopts the silicon sawtooth mode alternate with air gap to form grating, and top covering is monox.The optical grating construction of the present invention's design, the width of its silicon sawtooth narrows down from the middle to both ends gradually, and the width of middle conventional silicon waveguide then broadens from the middle to both ends gradually, smoothly links to each other with conventional silicon waveguide at two ends.The width of sawtooth and waveguide need to match each other so that the centre wavelength in each cycle of grating remains a definite value to obtain maximum reflection efficiency.The residing zone of apodization grating is the intrinsic region of silicon, does not mix the loss of having avoided Carriers Absorption to cause.
Described p-type and N-shaped heavily doped region can or diffuse to form by Implantation on silica-based, the contact resistance in order to reduce to link to each other with metal, and doping content is 10
18-10
21/ cm
3Between.The residing intrinsic region of P type and N-shaped heavily doped region (perhaps p-type and p-type heavily doped region) and intermediate raster forms p-i-n(or p-i-p) knot; P-i-n(or p-i-p) the width of intrinsic region in the knot vertically is linear change along grating, all will be wider than the width of apodization grating, and the apodization grating is embedded in the intrinsic region fully.
Described metal electrode is arranged on p-type and the N-shaped heavily doped region, is used for loading generating positive and negative voltage.
The present invention proposes a kind of silica-based integrated chirp grating variable optical delay line.Fig. 1 is the silica-based integrated chirp grating variable optical delay line structural representation of the present invention.Shown in Fig. 1 (a), the present invention mainly is comprised of apodization grating, p-type and N-shaped heavily doped region and electrode etc. based on the SOI optical waveguide.The apodization grating is in the intrinsic i district of p-i-n knot or p-i-p knot, and it is 2 * 10 that regional concentration is heavily mixed on both sides
19/ cm
3, electrode designs respectively above p-type and N-shaped heavily doped region.Because the variable optical delay line of the design's invention will link to each other with common fiber waveguide device, the strong reflection that causes owing to sudden change for fear of the grating two ends, therefore the optical grating construction in the present invention's design adopts the mode that gradually changes, wherein the width of silicon sawtooth narrows down gradually from the centre along the vertical two ends of grating, and middle conventional silicon duct width broadens from the middle to both ends gradually to the duct width that is attached thereto.By design sawtooth and duct width so that in the grating centre wavelength in each cycle remain a definite value.In the present embodiment, the cycle of grating is 563nm, the width of grating sawtooth as shown in Figure 2, wherein dotted line is the distribution of silicon sawtooth place duct width, solid line is the distribution of air gap place duct width, and intrinsic region width is linear change, and starting end is 2 μ m, end is 5 μ m, and the total length of grating is 1.46cm.Schematic diagram when Fig. 1 (b) adopts the p-i-p structure for the silica-based integrated chirp grating variable optical delay line of the present invention, except the two ends, intrinsic region were the p-type doping, other parameters was all identical with Fig. 1 (a).Figure 3 shows that the reflection strength spectral line of the silica-based integrated chirp grating variable optical delay line of the present invention when not having making alive and postpone spectral line.Can find out from Fig. 3 (a), by the design to grating sawtooth and gap width, the reflection spectral line secondary lobe of grating is obviously suppressed, and the delay at optical communication carrier wavelength 1550nm place commonly used is 45ps.Figure 4 shows that when the silica-based integrated chirp grating variable optical delay line of the present invention adopts the p-i-n structure that the sub-concentration of different voltage download stream is along grating distribution plan longitudinally.The present embodiment comes the carrier concentration under a certain voltage of emulation to distribute longitudinally at grating with business software Silvaco.Because the grating length very long (centimetre magnitude) that the present invention adopts, so the variation vertically is very slow, can adopt two-dimensional section emulation to replace three-dimensional artificial.As can be seen from Figure 4, same electrical is depressed, and carrier concentration corresponding to different intrinsic region width is not identical, and the refractive index of grating waveguide forms gradient in the vertical, thereby has realized chirp grating.Reflection strength spectral line and delay spectral line when Fig. 5 is the silica-based integrated chirp grating variable optical delay line employing p-i-n structure of the present invention under the different voltages.As can be seen from the figure, voltage is larger, and carrier injection is just more, because plasma dispersion effect, refractive index descends just larger, cause reflecting spectral line and postpone spectral line blue shift (being that the spectral line hypsochromic shift is moving) all occurs, thereby so that change has occured the retardation of the light signal of specific wavelength.In the present embodiment, suppose that optical carrier wavelength is 1550nm, the adjustable delay amount of corresponding light signal is about 150ps.Along with the increase of injected carrier concentration, the Carriers Absorption loss increases.Loss has also strengthened 12dB when in the present embodiment, realizing the 150ps delay.It can also be seen that from Fig. 5, adopt the retardation of this structure can continue to increase, but loss also can further strengthen.Figure 6 shows that when the silica-based integrated chirp grating variable optical delay line of the present invention adopts the p-i-p structure under the different voltages that variations in refractive index is along grating distribution plan longitudinally.Adopt business software Comsol that the temperature variation of grating waveguide under a certain voltage carried out emulation in the present embodiment.As can be seen from Figure 6, under the different voltages, grating diverse location temperature raises not identical, and thermo-optic effect causes the variations in refractive index distribution gradient, realizes chirp grating.Reflection strength spectral line and delay spectral line when Fig. 7 is the silica-based integrated chirp grating variable optical delay line employing p-i-p structure of the present invention under the different voltages.Adopt this structure, when increasing voltage, producing heat increases, and temperature raises, and the refractive index of silicon raises, cause reflecting spectral line and postpone spectral line red shift (being that spectral line moves to the long wavelength) all occurs, thereby so that the light signal retardation of specific wavelength change.In the present embodiment, suppose that optical carrier wavelength is 1550nm, as can be seen from Figures 6 and 7, refractive index increase by 0.0015 when the grating front end, reflection spectral line red shift 0.2nm supposes that optical carrier wavelength is 1550nm, and corresponding light signal postpones to reach 230ps, loss is 6dB, the loss during much smaller than p-i-n electricity adjustment structure.When the refractive index of grating front end increases less than 0.0013 the time, extra loss is essentially 0, and retardation can reach approximately 210ps.
Embodiment
In the present embodiment, adopt the electric adjustment structure of p-i-p, shown in Fig. 1 (b).Optical carrier wavelength is 1550nm, and p-type heavily doped region doping content is 2 * 10
19/ cm
3, the width value of grating waveguide as shown in Figure 2, intrinsic region width is linear change, starting end is 2 μ m, end is 5 μ m, the grating total length is 1.46cm.The resistance value difference that grating diverse location place is corresponding, temperature raises different under the same voltage: width is less, and resistance value is less, and temperature raises more, and the refractive index increase is larger, as shown in Figure 6.The refractive index increase will cause the red shift of spectral line, as shown in Figure 7, when the refractive index of grating front end increases by 0.0015, reflection spectral line red shift 0.2nm, corresponding light signal retardation is 230ps, loss is 6dB.Also can find out from Fig. 7, when voltage changes so that grating front end refractive index increases less than 0.0013 the time, loss is 0 substantially, and retardation reaches as high as 210ps.
By above-mentioned steps, patent chirp grating tunable optical of the present invention postpones integrated device can realize the dynamically adjustable of light delay, and advantage is that processing is relatively easy, regulates rapidly.
Claims (8)
1. silica-based integrated chirp grating variable optical delay line, it is characterized in that, consist of the optical waveguide apodization grating be included in the intrinsic region between two heavily doped regions and this two heavily doped regions in the silicon-on-insulator substrate, described two heavily doped regions are p-type and N-shaped heavily doped region or p-type and p-type heavily doped region, form p-i-n knot or p-i-p version, described optical waveguide apodization grating is that the silica-base material by high index-contrast consists of, the centre is conventional silicon waveguide, the grating of alternate formation is stitched for silicon sawtooth and air in the next door, depositing metal electrode on described p-type heavily doped region and N-shaped heavily doped region is used for linking to each other with on-load voltage with external circuit.
2. silica-based integrated chirp grating variable optical delay line according to claim 1 is characterized in that, the top covering of described optical waveguide apodization grating is monox.
3. silica-based integrated chirp grating variable optical delay line according to claim 1, it is characterized in that, described optical waveguide apodization grating, the width of its silicon sawtooth successively decreases from the centre to the waveguide two ends, the width of middle conventional silicon waveguide increases progressively from the centre to the waveguide two ends, smoothly link to each other the strong reflection that causes owing to sudden change when avoiding grating and conventional waveguide-coupled with conventional silicon waveguide at two ends.
4. silica-based integrated chirp grating variable optical delay line according to claim 3, it is characterized in that, described SOI light waveguide raster, the width of its silicon sawtooth and middle conventional waveguide mates mutually, so that the centre wavelength in each cycle of grating is a definite value, to obtain maximum reflection efficiency.
5. silica-based integrated chirp grating variable optical delay line according to claim 1 is characterized in that described p-i-n version:
Described apodization grating is in intrinsic i district fully, p-type and N-shaped heavily doped region are in respectively the both sides in intrinsic i district, the width in middle intrinsic i district changes along the grating vertical linear, the intrinsic region of different in width, under identical voltage, the concentration of carrier injection is different, causes the refractive index of silicon different by plasma dispersion effect, forms chirp grating.
6. silica-based integrated chirp grating variable optical delay line according to claim 1, it is characterized in that, described p-i-p version: the apodization grating is in intrinsic i district fully, and two p-type heavily doped regions are in respectively the both sides of intrinsic region, and the width of intermediate intrinsic region changes along the grating vertical linear equally, the intrinsic region of different in width, resistance value is different, and under identical voltage, temperature raises different, cause the refractive index of silicon different by thermo-optic effect, form chirp grating.
7. silica-based integrated chirp grating variable optical delay line according to claim 1 is characterized in that, the doping content of described p-type or N-shaped heavily doped region is 10
18-10
21/ cm
3Between, to form good Ohmic contact.
8. silica-based integrated chirp grating variable optical delay line according to claim 1 is characterized in that, described p-type or N-shaped heavily doped region from the width of grating between the hundreds of nanometer is to several microns.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104216051A (en) * | 2014-09-16 | 2014-12-17 | 上海交通大学 | Optical delay line structure based on waveguide mode multiplexing |
| CN105794057A (en) * | 2013-12-27 | 2016-07-20 | 英特尔公司 | Asymmetric optical waveguide grating resonators & DBR lasers |
| CN114594612A (en) * | 2022-03-04 | 2022-06-07 | 南京邮电大学 | Method for capturing atoms, manipulating and reading atomic states based on apodized grating group |
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| CN1292500A (en) * | 1999-07-02 | 2001-04-25 | 三星电子株式会社 | Equipment for manufacturing apodization fibre-optical raster |
| CN101859002A (en) * | 2010-06-25 | 2010-10-13 | 浙江大学 | Outer ridge Bragg waveguide grating based on SOI (Silicon-On-Insulator) |
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2012
- 2012-11-08 CN CN2012104445611A patent/CN102955267A/en active Pending
Patent Citations (2)
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| CN1292500A (en) * | 1999-07-02 | 2001-04-25 | 三星电子株式会社 | Equipment for manufacturing apodization fibre-optical raster |
| CN101859002A (en) * | 2010-06-25 | 2010-10-13 | 浙江大学 | Outer ridge Bragg waveguide grating based on SOI (Silicon-On-Insulator) |
Non-Patent Citations (2)
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| IVANO GIUNTONI,ET,AL.: "Tunable Bragg reflectors on silicon-on-insulator rib waveguides", 《OPTICS EXPRESS》 * |
| SAEED KHAN, ET AL.: "Complementary apodized grating waveguides for tunable optical delay lines", 《OPTICS EXPRESS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105794057A (en) * | 2013-12-27 | 2016-07-20 | 英特尔公司 | Asymmetric optical waveguide grating resonators & DBR lasers |
| CN104216051A (en) * | 2014-09-16 | 2014-12-17 | 上海交通大学 | Optical delay line structure based on waveguide mode multiplexing |
| CN114594612A (en) * | 2022-03-04 | 2022-06-07 | 南京邮电大学 | Method for capturing atoms, manipulating and reading atomic states based on apodized grating group |
| CN114594612B (en) * | 2022-03-04 | 2024-04-26 | 南京邮电大学 | Method for capturing atom, manipulating and reading atomic state based on apodization grating group |
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Application publication date: 20130306 |