CN102751659B - Tunable semiconductor laser unit - Google Patents
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- CN102751659B CN102751659B CN201210244941.0A CN201210244941A CN102751659B CN 102751659 B CN102751659 B CN 102751659B CN 201210244941 A CN201210244941 A CN 201210244941A CN 102751659 B CN102751659 B CN 102751659B
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Abstract
The invention discloses a tunable semiconductor laser unit which is composed of a front grating area, an active area, a phase area and a rear grating area, wherein the front grating area and the rear grating area are designed into a novel Bragg grating; the grafting is used or generating a comb reflection response with a balanced reflective peak, and a reflective index value of the grating area is changed by injecting current to the front grating and the rear grating by the vernier caliper effect so as to achieve quasi continuous tuning of a wide spectrum. The laser unit has the advantages that the output optical power is high; the optical power uniformity of each channel is good, and the switching speed of dynamic wavelength is high. Two Bragg reflection sections of the laser unit can also be designed into various apodisation and chirping forms of the Bragg grating. The laser unit also can be integrated with apparatuses such as a semiconductor light amplifier and an electro-absorption modulator.
Description
Technical field
The present invention relates to a kind of semiconductor laser with tunable, belong to laser technology field, this laser is a kind of based on interleaving the heterogeneous Bragg reflection laser that moves sampled-grating.
Background technology
Along with the development of optical communication, especially the development of optical communication network, dense wave division multipurpose (DWDM) technology even wavelength division multiplexing (WDM)/optics time division multiplexing (OTDM) systematic research has obtained development rapidly, thereby the flexibility of light source and system has been had to higher challenge.A semiconductor laser with tunable can replace multiple laser with fixed wavelength, has therefore reduced the manufacturing cost of laser, has simplified module package program, has also reduced the cost of backup and stock control; In optical network system, the wavelength tunability of tunable laser can allow the wavelength on optical routing to carry out dynamic-configuration, aspect dynamic restructuring, has important application; In addition, semiconductor laser with tunable is also the core that realizes the devices such as full optical cross connect (OXC), Optical Add Drop Multiplexer (OADM), signal exchange (OLS).
The people such as American L.A.Coldren disclose the semiconductor laser with tunable of making speculum with sampling Bragg grating in " Multi-section tunable laser with differing multi-element mirrors " (patent No.: US4896325A), and its structure chart as shown in Figure 1.Comprised front grating region 1, active area 2, phase region 3 and rear grating region 4, wherein front grating region 1 and rear grating region 4 are used for producing pectination reflectance spectrum.Sampling period Z of sampled-grating
sas shown in Figure 2, wherein the length of grating section 17 is Z to interior optical grating construction
g, another segment length is Z
s-Z
gregion be even no-raster region, sampled-grating reflectance spectrum as shown in Figure 3, has the comb spectrum of Sinc function shape envelope.The reflection peak spacing of the pectination reflectance spectrum of the forward and backward grating region 1 and 4 of laser has nuance, thereby utilizes vernier caliper effect, can be tuning by realizing quasi-continuous wide wave-length coverage in the mode of forward and backward grating region Injection Current.Due to the Sinc function shape peak reflection spectrum envelope of forward and backward grating region 1 and 4, Injection Current causes when tuning loss increase and the unevenness of gain spectral, utilize sampling Bragg grating to make the each wavelength channel power of semiconductor laser with tunable of speculum seriously unbalanced, have a strong impact on the performance of laser.
In order to improve the harmonious of power and to obtain wider wavelength tuning range, the multiple semiconductor laser with tunable based on vernier caliper effect is proposed again in recent years.1993, the people such as Japan Yuichi Tohmori have proposed a kind of semiconductor laser with tunable (Y.Tohmori based on superstructure Bragg grating, Y.Yoshikuni, H.Ishii, et al. " Broad-Range Wavelength-Tunable Superstructure Grating (SSG) DBR Lasers ", IEEEJournal of Quantum Electronics, vol.29, no.6,1993).Because Superstructure Grating (SSG) has very smooth reflection peak comb spectrum after optimizing, thereby the power equalization of each wavelength channel is improved, and wavelength tuning range can reach 100nm; 1998, the people such as American I .A.Avrutsky have proposed the tunable laser (I.A.Avrutsky based on the superimposed Bragg grating of binary, D.S.Ellis, A.Tager, et al. " Design of Widely Tunable Semiconductor Lasers and the Concept of Binary Superimposed Gratings (BSG's) ", IEEE Journal of Quantum Electronics, vol.34, no.4,, 1998).The superimposed grating of binary (BSG) is to insert π phase shift by some positions in uniform grating, thereby produces smooth reflection peak comb spectrum, and wavelength tuning range also can reach 100nm in theory; In addition, the Bookham company of Britain has proposed digital super model Bragg reflection laser (A.J.Ward, D.J.Robbins, G.Busico, et al, " Widely tunable DS-DBR laser with monolithically integrated SOA:design and performance ", Journal of Selected topics in quantum electronics, 11 (1), pp.149-156,2005); Italy M.Gioannini and I.Montrosset have proposed the broad tuning semiconductor laser (M.Gioannini based on interleaver grating, I.Montrosset, " Novel interleaved sampled grating mirrors for widely tunable DBR lasers ", IEE Proc.-Optoelectron., vol.148, no.1, February2001), and to interleaver grating two kinds of interleaving modes have been proposed: the sampled-grating that interleaves different Bragg period with interleave two groups of sampled-gratings that the grating cycle is identical, grating initial phase difference is π; How the Central China University of Science and Technology knows the people such as grain husk, Huang Dexiu, Yu Yonglin has proposed the semiconductor laser with tunable (X.He based on digital cascaded fiber grating (DCG), D.H, Y.Y, et al. " Widely wavelength-selectable lasers with digital concatenated grating reflectors proposal and simulation ", IEEE Photonics Technology Letters, vol.20, no.21, Nov2008), can improve power equalization and the raising dynamic wavelength switch speed of each wavelength channel of laser.
In the sampling period of the Superstructure Grating (SSG) that the people such as Yuichi Tohmori propose, there are multiple phase shifts, thereby in the process of electron beam lithography, need very accurately to control position and the size of phase shift, make very difficult.In addition, also there is pattern deficient phenomena (being that in fact lase does not appear in intrinsic pattern) in superstructure Bragg grating tunable laser, thereby pattern output is unstable.
The superimposed Bragg grating of binary (BSG) that the people such as I.A.Avrutsky propose need to utilize electronic beam photetching process to write very long optical grating construction, and its manufacturing process is also very difficult.
Digital super model Bragg reflection laser (DS-DBR) power output that Bookham company makes is lower, needs integrated semiconductor image intensifer (SOA) to improve power.Because its front grating region is the independent grating composition that adopts multiple different bragg wavelengths, need to make multiple contact electrodes, this high speed wavelength switch application for tuned laser is disadvantageous simultaneously.
The broad tuning semiconductor laser based on interleaver grating that M.Gioannini and I.Montrosset propose, it interleaves sampled-grating two kinds of structures.Be a sampled-grating that interleaves the different grating cycles, because the different grating cycles alternately exists, make very difficult; But the second is to interleave the sampled-grating that identical grating initial phase difference of grating cycle is π, due to two groups of sampled-grating spacing that interleave very little (～1um magnitude), the platform control precision needing in the time making is also very high, makes very difficult.
The broad tuning laser based on digital cascaded fiber grating that the people such as He Xiaoying, Yu Yonglin proposes, because the grating cycle difference of cascade is very little, adopt common holographic exposure method to be difficult to make, can utilize the method such as electron beam lithography, nano impression to make, but it is also very high to make required precision.
Summary of the invention
The object of this invention is to provide a kind of semiconductor laser with tunable, it can improve existing laser inconsistent problem of each wavelength channel Output optical power when tuning, and can realize the tuning and quick wavelength of wide wave-length coverage switches, grating region can adopt very ripe holographic exposure method to make, and has the simple advantage of technique.
The invention provides a kind of semiconductor laser with tunable, accompanying drawing 4 is four-part form of the present invention longitudinal section schematic diagrames based on interleaving the heterogeneous semiconductor laser with tunable that moves sampled-grating.It comprises front grating region 1, active area 2, phase region 3 and rear grating region 4.Wherein active area 2 is between front grating region 1 and phase region 3, and phase region 3 is between active area 2 and rear grating region 4; Front grating region 1, phase region 3 and 4 longitudinal sections, rear grating region mainly comprise upper limiting layer 5, light waveguide-layer 6 and lower limit layer 7 from top to bottom successively, and 2 longitudinal sections, active area mainly comprise upper limiting layer 5, active layer 8 and lower limit layer 7 from top to bottom successively; On front grating region 1, active area 2, phase region 3 and rear grating region 4, be manufactured with respectively electrode 11,12,13,14, the outer face of front grating region 1 and rear grating region 4 is coated with respectively anti-reflection film 15,16; Forward and backward grating region 1,4 has the forward and backward Bragg grating 9,10 of making in upper limiting layer 5.
Described front Bragg grating 9 is interleave and is formed by m group sampling Bragg grating, and m is positive integer, and each group sampled-grating is the heterogeneous sampled-grating that moves.The heterogeneous sampled-grating that moves that described front Bragg grating 9 i groups interleave, during adjacent samples week, raster phase is poor is
wherein, i=1,2 ... m.It is identical that the m group of described front Bragg grating 9 interleaves heterogeneous grating cycle, the sampling period of moving sampled-grating.
Described rear Bragg grating 10 is interleave and is formed by n group sampling Bragg grating, and n is positive integer, and each group sampled-grating is the heterogeneous sampled-grating that moves.The heterogeneous sampled-grating that moves that described rear Bragg grating 10 i groups interleave, during adjacent samples week, raster phase is poor is
wherein, i=1,2 ... n.It is identical that the n group of described rear Bragg grating 10 interleaves heterogeneous grating cycle, the sampling period of moving sampled-grating.
Front Bragg grating 9 and rear Bragg grating 10 have the different sampling periods, change grating region refractive index at two grating region Injection Currents, thereby it is tuning to utilize vernier caliper effect to carry out quasi-continuous wavelength.
The forward and backward Bragg grating 9,10 of described semiconductor laser with tunable can also design the various forms of cutting toe and warbling that become Bragg grating.
Described semiconductor laser with tunable can be integrated with semiconductor optical amplifier and/or electroabsorption modulator.
The invention has the advantages that:
1. the peak value uniformity that interleaves the heterogeneous reflectance spectrum that moves sampled-grating that the present invention adopts is fine, that compares that the people such as L.A.Coldren proposes makes the semiconductor laser with tunable of speculum with sampling Bragg grating, interleaving channel number in the heterogeneous reflectance spectrum 3dB passage that moves sampled-grating can be multiplied, thereby the power equalization of each wavelength channel is greatly improved.
2. heterogeneous each group of moving sampled-grating that interleave that the present invention adopts interleaves the heterogeneous sampled-grating that moves and has the identical grating cycle, thereby can utilize common holographic lithography method to make, heterogeneous moving occurred between the sampling period, thereby can be produced in sampling graphics template, compare superstructure Bragg grating laser device, the superimposed grating laser of binary, interleaver grating laser and digital cascade grating laser that M.Gioannini and I.Montrosset propose, have advantages of that preparing grating technique is simple and be easy to commercialization, and preparing grating difficulty is to limit the one of the main reasons of above-mentioned several laser structures development always.
3. semiconductor laser with tunable of the present invention utilizes vernier caliper principle, can obtain very wide quasi-continuous tuning scope, simultaneously spectrum line width.
4. the number of electrodes that semiconductor laser with tunable of the present invention needs is far less than digital super model Bragg reflection laser (DS-DBR), and the dynamic switch speed of wavelength is fast.
5. semiconductor laser with tunable of the present invention is simple in structure, be easy to make, and can be integrated with the various semiconductor device such as semiconductor optical amplifier, electroabsorption modulator, realize various functions.
Brief description of the drawings
Fig. 1 is the longitudinal section schematic diagram of four sections of sampled-grating semiconductor laser with tunable;
Fig. 2 is the structural representation of the sampling period of sampled-grating in grating region in accompanying drawing 1;
Fig. 3 is the pectination reflectance spectrum of sampled-grating in grating region in accompanying drawing 1;
Fig. 4 is the vertical section structure schematic diagram of four-part form of the present invention based on interleaving the heterogeneous semiconductor laser with tunable that moves sampled-grating.
Fig. 5 interleaves the heterogeneous structural representation that moves sampled-grating in the forward and backward grating region of first embodiment of the present invention;
Fig. 6 interleaves the heterogeneous reflectance spectrum that moves sampled-grating in the front grating region of first embodiment of the present invention;
Fig. 7 interleaves the heterogeneous reflectance spectrum that moves sampled-grating in the rear grating region of first embodiment of the present invention;
Fig. 8 be with the first embodiment of the present invention in after the heterogeneous reflectance spectrum that moves sampled-grating and have the sampled-grating of same light grid cycle, peak reflection channel spacing, grating length, coupling coefficient in grating region;
Fig. 9 interleaves the heterogeneous structural representation that moves sampled-grating in the forward and backward grating region of second embodiment of the present invention;
Figure 10 interleaves the heterogeneous reflectance spectrum that moves sampled-grating in the front grating region of second embodiment of the present invention.
Figure 11 interleaves the heterogeneous reflectance spectrum that moves sampled-grating in the rear grating region of second embodiment of the present invention.
Figure 12 be with the second embodiment of the present invention in after the heterogeneous reflectance spectrum that moves sampled-grating and have the sampled-grating of same light grid cycle, peak reflection channel spacing, grating length, coupling coefficient in grating region.
In figure, 1: front grating region; 2: active area; 3: phase region; 4: rear grating region; 5: upper limiting layer; 6: light waveguide-layer; 7: lower limit layer; 8: active layer; 9: front Bragg grating; 10: rear Bragg grating; 11: the first electrodes; 12: the second electrodes; 13: third electrode; 14: the four electrodes; 15: the first anti-reflection films; 16: the second anti-reflection films; 17: grating section.
Embodiment
In order to improve the harmony of each wavelength channel power of the semiconductor laser with tunable based on Bragg reflection formula grating, just need design to there is the grating filter of smooth peak reflectivity, pectination reflectance spectrum.Accompanying drawing 2 is the structural representation of sampled-grating one-period, Z
gfor grating segment length, Z
sfor the sampling period, Z
g/ Z
sfor the sampling duty ratio of sampled-grating.The attached reflectance spectrum that Figure 3 shows that sampled-grating, the people such as L.A.Coldren are at " Theory; Design; and Performance of Extended Tuning Range Semiconductor Lasers with Sampled Gratings " (IEEE, Journal of Quantum Electronics, vol.29, no.6, June, 1993) propose: sampled-grating reflectance spectrum envelope is Sinc function shape, and the channel number in reflectance spectrum three dB bandwidth is about int (Z
s/ Z
g) individual, int represents round numbers.When duty ratio (is Z
g/ Z
s) larger, the reflectivity of each reflection channel is very inhomogeneous, thereby has affected power equalization and the wavelength tuning range of each wavelength channel in wavelength tuning process.In the time that duty ratio is smaller, sampled-grating reflectance spectrum is more smooth.But little also meaning of duty ratio need to be improved optical grating reflection rate by longer grating, increase on the one hand the length of device, affect the performance such as threshold property, modulation of device, on the other hand because the waveguide loss that brings increases, also can affect the power equalization in the wavelength tuning process of laser; Reduce the grating sampling cycle, can in wider wave-length coverage, obtain smooth reflectance spectrum envelope, but also can increase sampled-grating reflection channel interval (seeing formula (2) below), thereby tuning being difficult to of the quasi-continuous wavelength of tuned laser realized.
Based on above analysis, the present invention proposes a kind of based on interleaving the heterogeneous semiconductor laser with tunable that moves sampled-grating.Accompanying drawing 4 is four-part form of the present invention longitudinal section schematic diagrames based on interleaving the heterogeneous semiconductor laser with tunable that moves sampled-grating, Z in figure
sfand Z
srrepresent respectively the sampling period length of front grating and rear grating.Core concept of the present invention is: sampled-grating can produce pectination reflectance spectrum, the heterogeneous sampled-grating that moves refers to grating initial phase generation phase shift during each adjacent samples week of sampled-grating, when the heterogeneous sampled-grating that moves that interleaves heterogeneous i group of moving sampled-grating and interleave, during adjacent samples week, raster phase is poor is
time, the heterogeneous reflectance spectrum that moves sampled-grating is with respect to the common sampled-grating generation wavelength shift of not adding phase shift, and deviant size d λ is:
λ
0＝2n
effΛ (3)
Wherein Δ λ is adjacent reflection channel interval in every group of heterogeneous reflectance spectrum that moves sampled-grating interleaving, and m is the heterogeneous sampled-grating group number that moves interleaving, i=1, and 2 ... m.N
gfor waveguide group index, λ
0for bragg wavelength, Z
sfor grating sampling cycle, n
efffor waveguide effective refractive index, the grating cycle that Λ is Bragg grating.
Can find out from formula (2), as the sampling period of sampled-grating Z
sreduce by a half, the reflection channel interval of reflectance spectrum can double, more smooth thereby reflectance spectrum becomes, and reflectance spectrum three dB bandwidth also doubles, and has then been offset by interleaving one group of reflectance spectrum
the heterogeneous sampled-grating that moves, just can in the situation that not changing total reflectance spectrum reflection channel interval, the number of channel in reflectance spectrum three dB bandwidth be doubled, thereby improve optical grating reflection characteristic.Based on above analysis, we can utilize and interleave the heterogeneous grating filter that moves sampled-grating design and have smooth peak reflectivity, pectination reflectance spectrum.Provide two embodiments based on interleaving the heterogeneous semiconductor laser with tunable that moves sampled-grating below.Concrete execution mode is shown in embodiment one and embodiment two.
The structure of the semiconductor laser with tunable in embodiment one and embodiment two all can be with reference to the four-part form shown in accompanying drawing 4 the longitudinal section schematic diagram based on interleaving the heterogeneous semiconductor laser with tunable that moves sampled-grating.It comprises front grating region 1, active area 2, phase region 3 and rear grating region 4.Wherein active area 2 is between front grating region 1 and phase region 3, and phase region 3 is between active area 2 and rear grating region 4; Front grating region 1, phase region 3 and 4 longitudinal sections, rear grating region mainly comprise upper limiting layer 5, light waveguide-layer 6 and lower limit layer 7 from top to bottom successively, and 2 longitudinal sections, active area mainly comprise upper limiting layer 5, active layer 8 and lower limit layer 7 from top to bottom successively; On front grating region 1, active area 2, phase region 3 and rear grating region 4, be manufactured with respectively electrode 11,12,13,14, the outer face of front grating region 1 and rear grating region 4 is coated with respectively anti-reflection film 15,16; Forward and backward grating region 1,4 has respectively the forward and backward Bragg grating 9,10 of making in upper limiting layer 5.
Semiconductor laser with tunable of the present invention is applicable to semi-conducting material and mixes the optical fiber of rare earth material and the laser that various waveguide material is manufactured, and is particularly useful for the laser that III-V InP/InGaAsP of family semi-conducting material is manufactured.
Describe with material system of III-V family.Front grating region 1, active area 2, phase region 3 and rear grating region 4 material selection III-V InP/InGaAsP of family materials, wherein active layer 8 materials have less energy gap than upper limiting layer 5 and lower limit layer 7 materials, light waveguide-layer 6 materials have less energy gap than upper limiting layer 5 and lower limit layer 7 materials, thereby form transversal waveguides, light field are limited.
The heterogeneous sampled-grating that moves that interleaves in forward and backward grating region of the present invention has the identical grating cycle, thereby can adopt holographic exposure method to make, and also can adopt the fabrication techniques such as electron beam lithography, nano impression, high energy femtosecond laser write.
Front grating region 1, active area 2, phase region 3 and rear grating region 4 can by docking grow or the fabrication techniques such as quantum well mixing on same substrate.
In active layer 8, produce photon and the gain of light is provided the Injection Current in the situation that by broadband spontaneous radiation and stimulated radiation, its working mechanism is: by electrode, electric current is injected with to source region 2, cause that active layer 8 carrier concentration in semi-conducting material that gains increases, the reversion of formation carrier number, thereby by the recombination luminescence in electronics and hole; Forward and backward grating region 1,4 is selected for realizing wavelength, the light of the frequency of the selected gain maximum that meets phase condition vibrates in the resonant cavity being made up of former and later two grating regions 1,4, when the gain of light and loss reach after balance, form stable Laser output from two grating region end faces; The interior Injection Current of phase region 3 can change the position of the longitudinal mode of whole laser, tuning for realizing quasi-continuous wavelength, if do not need the quasi-continuous adjustable phase region 3 of also can not making.The structural difference of embodiment one and embodiment two is mainly different at forward and backward Bragg grating 9,10 structural parameters of forward and backward grating region 1,4 part.
Contrast accompanying drawing below, embodiment is described.
Embodiment one:
In this embodiment one, forward and backward Bragg grating 9,10 all adopts two groups of heterogeneous sampled-gratings that move that interleave, accompanying drawing 5 is that this embodiment one forward and backward interleaves the heterogeneous sample optical grating construction schematic diagram that pipettes, and is respectively from top to bottom the heterogeneous sampled-grating that moves of first, second group.For forward and backward Bragg grating 9,10, according to formula
m=2, i=1,2.The grating initial phase difference that first group heterogeneous moved during sampled-grating adjacent samples week is
the grating initial phase difference that second group heterogeneous moved during sampled-grating adjacent samples week is
two groups of heterogeneous sampled-gratings that move that interleave have identical grating cycle, sampling period.Second group heterogeneous moves sampled-grating and heterogeneously moves the direction that sampled-grating interleaves and see dotted arrow to first group, adopt and interleave successively (the front and back relative position of two groups of heterogeneous shifted rasters also can be exchanged), while interleaving, heterogeneous grating part of moving sampled-grating on the same group can not be not overlapping.Forward and backward grating parameter used is as shown in table 1 below, the III-V InP/InGaAsP of family material grating region effective refractive index n
effgenerally elect 3.4 as:
Table 1
Accompanying drawing 6 and accompanying drawing 7 are respectively forward and backwardly in forward and backward grating region 1,4 of the present invention in first embodiment to interleave the heterogeneous reflectance spectrum that moves sampled-grating 9,10, from reflectance spectrum, can find out, of the present inventionly interleave the heterogeneous wave-length coverage pipetting in sample optical grating reflection spectrum three dB bandwidth and can cover 1500nm to 1600nm.With the rear Bragg grating 10 of embodiment one have same light grid cycle, peak reflection channel spacing, grating length and coupling coefficient sampled-grating reflectance spectrum as shown in Figure 8, can be found out by accompanying drawing 7 and the reflectance spectrum contrast of accompanying drawing 8, of the present inventionly interleave the heterogeneous sampled-grating that moves and there is more smooth peak reflectivity with respect to common sampled-grating, thereby in wavelength tuning process, the power equalization of each wavelength channel is better.
Embodiment two:
In this embodiment two, forward and backward Bragg grating 9,10 all adopts three groups of heterogeneous sampled-gratings that move that interleave, accompanying drawing 9 is that this embodiment two forward and backward interleaves the heterogeneous sample optical grating construction schematic diagram that pipettes, and is respectively from top to bottom second, one, three group of heterogeneous sampled-grating that moves.For forward and backward Bragg grating 9,10, according to formula
m=3, i=1,2,3.The grating initial phase difference that first group heterogeneous moved during sampled-grating adjacent samples week is
the grating initial phase difference that second group heterogeneous moved during sampled-grating adjacent samples week is
the grating initial phase difference that the 3rd group heterogeneous moved during sampled-grating adjacent samples week is
second and third group is heterogeneous moves sampled-grating and heterogeneously moves the direction that sampled-grating interleaves and see dotted arrow to first group, adopt and interleave successively (the front and back relative position of three groups of heterogeneous shifted rasters also can be exchanged), while interleaving, heterogeneous grating part of moving sampled-grating on the same group can not be not overlapping.Three groups of heterogeneous sampled-gratings that move that interleave have identical grating cycle and sampling period.Forward and backward grating parameter used is as shown in table 2 below, the III-V InP/InGaAsP of family material grating region effective refractive index n
effgenerally elect 3.4 as:
Table 2
Accompanying drawing 10 and accompanying drawing 11 are respectively forward and backwardly in forward and backward grating region 1,4 of the present invention in second embodiment to interleave the heterogeneous reflectance spectrum that moves sampled-grating 9,10, from reflectance spectrum, can find out, of the present inventionly interleave the heterogeneous wave-length coverage pipetting in sample optical grating reflection spectrum three dB bandwidth and can cover 1500nm to 1600nm.With the rear Bragg grating 10 of embodiment two have same light grid cycle, peak reflection channel spacing, grating length and coupling coefficient sampled-grating reflectance spectrum as shown in Figure 12, can be found out by accompanying drawing 11 and the reflectance spectrum contrast of accompanying drawing 12, of the present inventionly interleave the heterogeneous sampled-grating that moves and there is more smooth peak reflectivity with respect to common sampled-grating, thereby in wavelength tuning process, the power equalization of each wavelength channel is better.Can be found out with the reflectance spectrum comparing result of accompanying drawing 11 by accompanying drawing 6 and accompanying drawing 10, accompanying drawing 7 respectively, increase along with interleaving the heterogeneous group number that moves sampled-grating, it is more smooth that reflectance spectrum becomes.
Above embodiment is only for illustrating method of the present invention; and the not restriction to the scope of application of the present invention; the those of ordinary skill in relevant technologies field; without departing from the spirit and scope of the present invention; can also make a variety of changes implementation content; thereby the technical scheme being equal to also belongs to category of the present invention, scope of patent protection of the present invention should be defined by the claims.
Claims (5)
1. a semiconductor laser with tunable, this laser longitudinal cross-section passes through and comprises successively front grating region (1), active area (2), phase region (3) and rear grating region (4); Front grating region (1), phase region (3) and rear grating region (4) mainly comprise successively from top to bottom upper limiting layer (5), light waveguide-layer (6) and lower limit layer (7) on longitudinal section; Active area (2) mainly comprises successively from top to bottom upper limiting layer (5), active layer (8) and lower limit layer (7) on longitudinal section; Front grating region (1) is provided with front Bragg grating (9) in upper limiting layer (5), rear grating region (4) is provided with rear Bragg grating (10) in upper limiting layer (5), it is characterized in that front Bragg grating (9) and rear Bragg grating (10) are all to interleave the heterogeneous sample Bragg grating that pipettes; Described front Bragg grating (9) is interleave and is formed by m group sampling Bragg grating, and m is positive integer, and each group sampled-grating is the heterogeneous sampled-grating that moves; The heterogeneous sampled-grating that moves interleaving for front Bragg grating (9) i groups, during its adjacent samples week, raster phase is poor
for (i-1) * 2 π/m, wherein i=1,2 ... .m; It is identical that the m group of described front Bragg grating (9) interleaves heterogeneous grating cycle, the sampling period of moving sampled-grating; Described rear Bragg grating (10) is interleave and is formed by n group sampling Bragg grating, and n is positive integer, and each group sampled-grating is the heterogeneous sampled-grating that moves; The heterogeneous sampled-grating that moves interleaving for rear Bragg grating (10) i groups, during its adjacent samples week, raster phase is poor
for (i-1) * 2 π/n, wherein i=1,2 ... .n; It is identical that the n group of described rear Bragg grating (10) interleaves heterogeneous grating cycle, the sampling period of moving sampled-grating.
2. laser according to claim 1, is characterized in that being respectively equipped with the first electrode (11), the second electrode (12), third electrode (13) and the 4th electrode (14) at the upper surface of front grating region (1), active area (2), phase region (3) and rear grating region (4).
3. according to the laser described in any one in claim 1, it is characterized in that being respectively equipped with the first anti-reflection film (15) and the second anti-reflection film (16) at the outer surface of front grating region (1) and rear grating region (4).
4. laser according to claim 1, is characterized in that described front Bragg grating (9) and rear Bragg grating (10) are to have evenly, cut toe or the Bragg grating of the form of warbling.
5. laser according to claim 1, is characterized in that described laser and semiconductor optical amplifier and/or electroabsorption modulator are integrated.
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| CN103066494A (en) * | 2013-01-05 | 2013-04-24 | 华中科技大学 | Tunable semiconductor laser |
| CN105119141B (en) * | 2015-09-17 | 2016-06-22 | 华中科技大学 | A kind of dual-wavelength tunable semiconductor laser |
| CN105356292B (en) * | 2015-11-30 | 2018-11-02 | 武汉电信器件有限公司 | A kind of tunable wavelength semiconductor laser |
| CN107425405B (en) * | 2017-06-29 | 2019-11-08 | 武汉电信器件有限公司 | A kind of semiconductor laser with tunable |
| CN112421357B (en) * | 2020-10-08 | 2022-06-07 | 武汉光谷航天三江激光产业技术研究院有限公司 | Frequency modulation type semiconductor seed source for high-power optical fiber laser |
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|---|
| M.Gioannini et al..Novel interleaved sampled grating mirrors for widely tunable DBR lasers.《IEE Proc.-Optoelectron.》.2001,第148卷(第1期),第13-18页. |
| Novel interleaved sampled grating mirrors for widely tunable DBR lasers;M.Gioannini et al.;《IEE Proc.-Optoelectron.》;20010228;第148卷(第1期);第13-18页 * |
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