CN102751659A - Tunable semiconductor laser unit - Google Patents
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- CN102751659A CN102751659A CN2012102449410A CN201210244941A CN102751659A CN 102751659 A CN102751659 A CN 102751659A CN 2012102449410 A CN2012102449410 A CN 2012102449410A CN 201210244941 A CN201210244941 A CN 201210244941A CN 102751659 A CN102751659 A CN 102751659A
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Abstract
The invention discloses a tunable semiconductor laser unit which is composed of a front grating area, an active area, a phase area and a rear grating area, wherein the front grating area and the rear grating area are designed into a novel Bragg grating; the grafting is used or generating a comb reflection response with a balanced reflective peak, and a reflective index value of the grating area is changed by injecting current to the front grating and the rear grating by the vernier caliper effect so as to achieve quasi continuous tuning of a wide spectrum. The laser unit has the advantages that the output optical power is high; the optical power uniformity of each channel is good, and the switching speed of dynamic wavelength is high. Two Bragg reflection sections of the laser unit can also be designed into various apodisation and chirping forms of the Bragg grating. The laser unit also can be integrated with apparatuses such as a semiconductor light amplifier and an electro-absorption modulator.
Description
Technical field
The present invention relates to a kind of semiconductor laser with tunable, belong to laser technology field, this laser is a kind of based on interleaving the heterogeneous Bragg reflection laser that pipettes kind grating.
Background technology
Development along with optical communication; Especially the continuous development of optical communication network; Dense wave division multipurpose (DWDM) technology even wavelength division multiplexing (WDM)/optics time division multiplexing (OTDM) systematic research has obtained development rapidly, thereby the flexibility of light source and system has been had higher challenge.A semiconductor laser with tunable can replace a plurality of laser with fixed wavelength, has therefore reduced the manufacturing cost of laser, has simplified the module package program, has also reduced the cost of backup and stock control; In optical network system, the wavelength tunability of tunable laser can allow the wavelength on the optical routing is carried out dynamic-configuration, aspect dynamic restructuring, important application is arranged; In addition, semiconductor laser with tunable also is the core that realizes full optical cross connect (OXC), OADM (OADM), signal exchange devices such as (OLS).
(patent No.: disclose the semiconductor laser with tunable of making speculum with the sampling Bragg grating US4896325A), its structure chart is shown in accompanying drawing 1 at " Multi-section tunable laser with differing multi-element mirrors " for people such as American L. A. Coldren.Comprised preceding grating region 1, active area 2, phase region 3 and back grating region 4, wherein before grating region 1 be used for producing the pectination reflectance spectrum with back grating region 4.Sampling period Z of sampled-grating
SInterior optical grating construction is shown in accompanying drawing 2, and wherein the length of grating section 17 is Z
g, another segment length is Z
S-Z
gThe zone be even no-raster zone, the sampled-grating reflectance spectrum is as shown in Figure 3, has the pectination spectrum of Sinc function shape envelope.The reflection peak spacing of forward and backward grating region 1 of laser and 4 pectination reflectance spectrum has nuance, thereby utilizes the vernier caliper effect, can realize that accurate continuous wide wave-length coverage is tuning through the mode at forward and backward grating region injection current.Because forward and backward grating region 1 and 4 Sinc function shape peak reflection spectrum envelope, injection current causes when tuning loss increase and the unevenness of gain spectral; It is seriously unbalanced to utilize the sampling Bragg grating to make each wavelength channel power of semiconductor laser with tunable of speculum, has a strong impact on the performance of laser.
In order to improve the harmonious of power and to obtain wideer wavelength tuning range, multiple semiconductor laser with tunable based on the vernier caliper effect has been proposed again in recent years.1993, people such as Japanese Yuichi Tohmori proposed a kind of semiconductor laser with tunable based on the superstructure Bragg grating (Y. Tohmori, Y. Yoshikuni; H. Ishii; Et al. " Broad-Range Wavelength-Tunable Superstructure Grating (SSG) DBR Lasers ", IEEE Journal of Quantum Electronics, vol.29; No.6,1993).Owing to have very smooth reflection peak pectination spectrum after superstructure grating (SSG) is optimized, thereby the power equalization property of each wavelength channel is improved, and wavelength tuning range can reach 100nm; 1998, American I. people such as A. Avrutsky have proposed tunable laser (I. A. Avrutsky, D. S. Ellis based on the superimposed Bragg grating of binary; A. Tager, et al. " Design of Widely Tunable Semiconductor Lasers and the Concept of Binary Superimposed Gratings (BSG's) ", IEEE Journal of Quantum Electronics; Vol.34; No.4,, 1998).The superimposed grating of binary (BSG) is to insert the π phase shift through some positions in uniform grating, thereby produces smooth reflection peak pectination spectrum, and wavelength tuning range also can reach 100nm in theory; In addition, the Bookham company of Britain has proposed digital super model Bragg reflection laser (A. J. Ward, D. J. Robbins; G. Busico, et al, " Widely tunable DS-DBR laser with monolithically integrated SOA:design and performance "; Journal of Selected topics in quantum electronics; 11 (1), pp.149-156,2005); Italy M.Gioannini and I. Montrosset have proposed based on the broad tuning semiconductor laser (M.Gioannini that interleaves sampled-grating; I. Montrosset; " Novel interleaved sampled grating mirrors for widely tunable DBR lasers "; IEE Proc.-Optoelectron., vol. 148, and no. 1; February 2001), and proposed two kinds of interleaving modes to interleaving sampled-grating: the sampled-grating that interleaves different Bragg period is the sampled-grating of π with interleaving identical, grating first phase potential difference of two groups of grating cycles; How the Central China University of Science and Technology knows people such as grain husk, Huang Dexiu, Yu Yonglin has proposed semiconductor laser with tunable (the X. He based on digital cascaded fiber grating (DCG); D. H; Y. Y, et al. " Widely wavelength-selectable lasers with digital concatenated grating reflectors proposal and simulation ", IEEE Photonics Technology Letters; Vol. 20; No. 21, Nov 2008), can improve laser each wavelength channel power equalization property and improve the dynamic wavelength switch speed.
There are a plurality of phase shifts in the sampling period of the superstructure grating (SSG) that people such as Yuichi Tohmori propose, thereby in the process of electron beam lithography, need very accurately to control the position and the size of phase shift, make very difficulty.In addition, also there is pattern deficient phenomena (being that in fact lase does not appear in intrinsic pattern) in superstructure Bragg grating tunable laser, thereby pattern output is unstable.
I. the superimposed Bragg grating of binary (BSG) that proposes of people such as A. Avrutsky need utilize electronic beam photetching process to write very long optical grating construction, and its manufacturing process is difficulty very also.
Digital super model Bragg reflection laser (DS-DBR) power output that Bookham company makes is lower, needs integrated semiconductor image intensifer (SOA) to improve power.Because its preceding grating region is to adopt the independent grating of a plurality of different bragg wavelengths to form, need to make a plurality of contact electrodes simultaneously, this high speed wavelength switch application for tuned laser is disadvantageous.
M.Gioannini and I. Montrosset propose based on the broad tuning semiconductor laser that interleaves sampled-grating, it interleaves sampled-grating has two kinds of structures.A kind of is the sampled-grating that interleaves the different grating cycles, because the different grating cycles alternately exists, makes very difficulty; Second kind is but that to interleave grating cycle identical grating first phase potential difference be the sampled-grating of π, because two groups of sampled-grating spacings that interleave very little (~ 1um magnitude), the platform control precision that when making, needs is also very high, makes very difficulty.
The broad tuning laser that people such as He Xiaoying, Yu Yonglin proposes based on digital cascaded fiber grating; Because the grating cycle difference of cascade is very little; Adopt common holographic exposure method to be difficult to make, methods such as electron beam lithography capable of using, nano impression are made, but it is also very high to make required precision.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor laser with tunable; It can improve existing laser inconsistent problem of each wavelength channel Output optical power when tuning; And can realize that the tuning and quick wavelength of wide wave-length coverage switches; Grating region can adopt very ripe holographic exposure method to make, and has advantage of simple technology.
The invention provides a kind of semiconductor laser with tunable, accompanying drawing 4 is that four-part form of the present invention is based on interleaving the heterogeneous longitudinal section sketch map that pipettes the semiconductor laser with tunable of kind grating.It comprises preceding grating region 1, active area 2, phase region 3 and back grating region 4.Wherein active area 2 is between preceding grating region 1 and phase region 3, and phase region 3 is between active area 2 and back grating region 4; Preceding grating region 1, phase region 3 and grating region 4 longitudinal sections, back mainly comprise upper limiting layer 5, light waveguide-layer 6 and lower limit layer 7 from top to bottom successively, and active area 2 longitudinal sections mainly comprise upper limiting layer 5, active layer 8 and lower limit layer 7 from top to bottom successively; Be manufactured with electrode 11,12,13,14 respectively on preceding grating region 1, active area 2, phase region 3 and the back grating region 4, preceding grating region 1 is coated with anti-reflection film 15,16 respectively with the outer face of back grating region 4; Forward and backward grating region 1,4 has the forward and backward Bragg grating of in upper limiting layer 5, making 9,10.
Bragg grating 9 is interleave by m group sampling Bragg grating and constitutes before described, and m is a positive integer, and each group sampled-grating is the heterogeneous kind grating that pipettes.The heterogeneous kind grating that pipettes that Bragg grating 9 i group interleaves before described, the raster phase difference is
=(i-1) * 2 π/m during adjacent samples week.Wherein, i=1,2 ... M.It is identical that the m group of Bragg grating 9 interleaves heterogeneous grating cycle, the sampling period that pipettes kind grating before described.
Described back Bragg grating 10 is interleave by n group sampling Bragg grating and constitutes, and n is a positive integer, and each group sampled-grating is the heterogeneous kind grating that pipettes.The heterogeneous kind grating that pipettes that described back Bragg grating 10 i group interleaves, the raster phase difference is
=(i-1) * 2 π/n during adjacent samples week.Wherein, i=1,2 ... N.It is identical that the n group of described back Bragg grating 10 interleaves heterogeneous grating cycle, the sampling period that pipettes kind grating.
Preceding Bragg grating 9 has the different sampling periods with back Bragg grating 10, changes the grating region refractive indexes at two grating region injection currents, grows tuning thereby can utilize the vernier caliper effect to carry out quasi c. w..
The forward and backward Bragg grating 9,10 of described semiconductor laser with tunable can also be designed to the various forms of cutting toe and warbling of Bragg grating.
Described semiconductor laser with tunable can be integrated with semiconductor optical amplifier and/or electroabsorption modulator.
The invention has the advantages that:
1. the present invention adopts, and to interleave the heterogeneous kind peak value uniformity of grating reflection spectrum that pipettes fine; That compares that people such as L. A. Coldren proposes makes the semiconductor laser with tunable of speculum with the sampling Bragg grating; Interleaving the heterogeneous kind interior channel number of grating reflection spectrum 3dB passage that pipettes can be multiplied, thereby the power equalization property of each wavelength channel is greatly improved.
2. the present invention adopts interleaves heterogeneous each group that pipettes kind grating and interleaves the heterogeneous kind grating that pipettes and have the identical grating cycle; Thereby can utilize common holographic lithography method to make; Heterogeneous moving occurred between the sampling period; Thereby can be produced in the sampling graphics template; That compares that superstructure Bragg grating laser device, the superimposed grating laser of binary, M.Gioannini and I. Montrosset propose interleaves sampled-grating laser and digital cascade grating laser, and it is simple and be easy to the advantage of commercialization to have preparing grating technology, and the one of the main reasons of the preparing grating difficulty above-mentioned several kinds of laser structures development that always is restriction.
3. semiconductor laser with tunable of the present invention utilizes vernier caliper principle, can obtain the humorous scope of very wide quasi continuous tuner, simultaneously spectrum line width.
4. the number of electrodes that semiconductor laser with tunable of the present invention needs is less than digital super model Bragg reflection laser (DS-DBR) far away, and the dynamic switch speed of wavelength is fast.
5. semiconductor laser with tunable of the present invention is simple in structure, is easy to make, and can be integrated with various semiconductor device such as semiconductor optical amplifier, electroabsorption modulators, realize various functions.
Description of drawings
Fig. 1 is the longitudinal section sketch map of four sections sampled-grating semiconductor laser with tunable;
Fig. 2 is the structural representation of a sampling period of the sampled-grating in the grating region in the accompanying drawing 1;
Fig. 3 is the pectination reflectance spectrum of sampled-grating in the grating region in the accompanying drawing 1;
Fig. 4 is that four-part form of the present invention is based on interleaving the heterogeneous vertical section structure sketch map that pipettes the semiconductor laser with tunable of kind grating.
Fig. 5 interleaves the heterogeneous structural representation that pipettes kind grating in the forward and backward grating region of first embodiment of the present invention;
Fig. 6 interleaves the heterogeneous kind grating reflection spectrum that pipettes in the preceding grating region of first embodiment of the present invention;
Fig. 7 interleaves the heterogeneous kind grating reflection spectrum that pipettes in the back grating region of first embodiment of the present invention;
Fig. 8 be with first embodiment of the present invention in the back grating region is heterogeneous pipettes the reflectance spectrum that kind grating has the sampled-grating of same light grid cycle, peak reflection channel spacing, grating length, coupling coefficient;
Fig. 9 interleaves the heterogeneous structural representation that pipettes kind grating in the forward and backward grating region of second embodiment of the present invention;
Figure 10 interleaves the heterogeneous kind grating reflection spectrum that pipettes in the preceding grating region of second embodiment of the present invention.
Figure 11 interleaves the heterogeneous kind grating reflection spectrum that pipettes in the back grating region of second embodiment of the present invention.
Figure 12 be with second embodiment of the present invention in the back grating region is heterogeneous pipettes the reflectance spectrum that kind grating has the sampled-grating of same light grid cycle, peak reflection channel spacing, grating length, coupling coefficient.
Among the figure, 1: preceding grating region; 2: active area; 3: phase region; 4: the back grating region; 5: upper limiting layer; 6: light waveguide-layer; 7: lower limit layer; 8: active layer; 9: preceding Bragg grating; 10: the back Bragg grating; 11: the first electrodes; 12: the second electrodes; 13: third electrode; 14: the four electrodes; 15: the first anti-reflection films; 16: the second anti-reflection films; 17: the grating section.
Embodiment
In order to improve harmony, just need design to have the grating filter of smooth peak reflectivity, pectination reflectance spectrum based on each wavelength channel power of the semiconductor laser with tunable of Bragg reflection formula grating.Accompanying drawing 2 is the structural representation of sampled-grating one-period, Z
gBe grating segment length, Z
SBe the sampling period, Z
g/ Z
SSampling duty ratio for sampled-grating.Accompanying drawing 3 is depicted as the reflectance spectrum of sampled-grating, and (vol. 29 for IEEE, Journal of Quantum Electronics at " Theory, Design; and Performance of Extended Tuning Range Semiconductor Lasers with Sampled Gratings " for people such as L.A.Coldren; No. 6; June, 1993) propose: sampled-grating reflectance spectrum envelope is the Sinc function shape, and the channel number in the reflectance spectrum three dB bandwidth is about int (Z
S/ Z
g) individual, int representes round numbers.When duty ratio (is Z
g/ Z
S) bigger, the reflectivity of each reflection channel is very inhomogeneous, thereby has influenced the power equalization property and the wavelength tuning range of each wavelength channel in the wavelength tuning process.When duty ratio was smaller, the sampled-grating reflectance spectrum was more smooth.But little also meaning of duty ratio need be improved the optical grating reflection rate by longer grating; Increased the length of device on the one hand; Influenced the performance such as threshold property, modulation of device; Because the waveguide loss that brings increases, also can influence the power equalization property in the wavelength tuning process of laser on the other hand; Reduce the grating sampling cycle, can in wideer wave-length coverage, obtain smooth reflectance spectrum envelope, but also can increase sampled-grating reflection channel (face formula (2) as follows) at interval, thereby long tuning being difficult to of tuned laser quasi c. w. realized.
Based on above analysis, the present invention proposes a kind of based on interleaving the heterogeneous semiconductor laser with tunable that pipettes kind grating.Accompanying drawing 4 is that four-part form of the present invention is based on interleaving the heterogeneous longitudinal section sketch map that pipettes the semiconductor laser with tunable of kind grating, Z among the figure
SfAnd Z
SrThe sampling period length of grating and back grating before representing respectively.Core concept of the present invention is: sampled-grating can produce the pectination reflectance spectrum; The heterogeneous kind grating that pipettes is meant grating initial phase generation phase shift during each adjacent samples week of sampled-grating; When interleaving the heterogeneous kind grating that pipettes that the heterogeneous i group that pipettes kind grating interleaves; When the raster phase difference is
during adjacent samples week; The heterogeneous kind grating reflection spectrum that pipettes is with respect to the common sampled-grating generation wavelength shift of not adding phase shift, and deviant size
is:
(3)
Wherein
pipettes in kind grating reflection spectrum adjacent reflection channel at interval for every group of interleave heterogeneous; M is the heterogeneous kind grating group number that pipettes that interleaves; I=1; 2 ... M.
is the waveguide group index;
is bragg wavelength;
is the grating sampling cycle;
is the waveguide effective refractive index, and
is the grating cycle of Bragg grating.
Can find out from formula (2); Reduce by a half when the sampling period of sampled-grating
; The reflection channel of reflectance spectrum can double at interval; It is more smooth that thereby reflectance spectrum becomes; Reflectance spectrum three dB bandwidth also doubles; Then through interleaving the heterogeneous kind grating that pipettes that one group of reflectance spectrum has squinted
; Just can make under not changing total reflectance spectrum reflection channel situation at interval that the number of channel doubles in the reflectance spectrum three dB bandwidth, thereby improve the optical grating reflection characteristic.Based on above analysis, we can utilize and interleave the heterogeneous grating filter that kind grating design has smooth peak reflectivity, pectination reflectance spectrum that pipettes.Provide two below based on interleaving the heterogeneous embodiment that pipettes the semiconductor laser with tunable of kind grating.Concrete execution mode is seen embodiment one and embodiment two.
The structure of the semiconductor laser with tunable in embodiment one and embodiment two all can be with reference to the four-part form shown in the accompanying drawing 4 based on interleaving the heterogeneous longitudinal section sketch map that pipettes the semiconductor laser with tunable of kind grating.It comprises preceding grating region 1, active area 2, phase region 3 and back grating region 4.Wherein active area 2 is between preceding grating region 1 and phase region 3, and phase region 3 is between active area 2 and back grating region 4; Preceding grating region 1, phase region 3 and grating region 4 longitudinal sections, back mainly comprise upper limiting layer 5, light waveguide-layer 6 and lower limit layer 7 from top to bottom successively, and active area 2 longitudinal sections mainly comprise upper limiting layer 5, active layer 8 and lower limit layer 7 from top to bottom successively; Be manufactured with electrode 11,12,13,14 respectively on preceding grating region 1, active area 2, phase region 3 and the back grating region 4, preceding grating region 1 is coated with anti-reflection film 15,16 respectively with the outer face of back grating region 4; Forward and backward grating region 1,4 has the forward and backward Bragg grating of in upper limiting layer 5, making 9,10 respectively.
Semiconductor laser with tunable of the present invention is applicable to semi-conducting material and mixes the optical fiber of rare earth material and the laser that various waveguide material is made, is particularly useful for the laser that the III-InP/InGaAsP of V family semi-conducting material is made.
Describe with III-material system of V family.Preceding grating region 1, active area 2, phase region 3 and the back grating region 4 material selections III-InP/InGaAsP of V family material; Wherein active layer 8 materials have littler energy gap than upper limiting layer 5 and lower limit layer 7 materials; Light waveguide-layer 6 materials have littler energy gap than upper limiting layer 5 and lower limit layer 7 materials, thereby form transversal waveguides light field are limited.
The heterogeneous kind grating that pipettes that interleaves in the forward and backward grating region of the present invention has the identical grating cycle, thereby can adopt the holographic exposure method to make, and also can adopt fabrication techniques such as electron beam lithography, nano impression, high energy femtosecond laser write.
Before grating region 1, active area 2, phase region 3 and back grating region 4 can be on same substrate through fabrication techniques such as butt joint growth or quantum well mixings.
Produce photon and under the situation of injection current, the gain of light is provided through broadband spontaneous radiation and stimulated radiation in the active layer 8; Its working mechanism is: through electrode electric current is injected with source region 2; Cause that carrier concentration increases in the active layer 8 gain semi-conducting materials; The formation carrier number reverses, thereby passes through the recombination luminescence in electronics and hole; Forward and backward grating region 1,4 is used to realize the wavelength selection; The light of the frequency that the selected gain of satisfying phase condition is maximum vibrates in the resonant cavity that is made up of former and later two grating regions 1,4; After the gain of light and loss reach balance, form stable laser output from two grating region end faces; Injection current can change the position of the longitudinal mode of whole laser in the phase region 3, is used to realize that quasi c. w. is long tuning, and standard is adjustable continuously also can not make phase region 3 if do not need.The structural difference of embodiment one and embodiment two is mainly different at forward and backward Bragg grating 9,10 structural parameters of forward and backward grating region 1,4 parts.
Contrast accompanying drawing below, embodiment is described.
Embodiment one:
In this embodiment one; Forward and backward Bragg grating 9,10 all adopts two groups of heterogeneous kind gratings that pipette that interleave; Accompanying drawing 5 is that this embodiment one forward and backward interleaves the heterogeneous kind optical grating construction sketch map that pipettes, and is respectively the heterogeneous kind grating that pipettes of first, second group from top to bottom.For forward and backward Bragg grating 9,10; According to formula
; M=2, i=1,2.The grating initial phase difference that first group heterogeneous pipetted during kind grating adjacent samples week is
=0; The grating initial phase difference that second group heterogeneous pipetted during kind grating adjacent samples week is
=π, and two groups of heterogeneous kind gratings that pipette that interleave have identical grating cycle, sampling period.Second group heterogeneous pipettes kind grating and heterogeneously pipettes the direction that kind grating interleaves and see dotted arrow to first group; Adopt to interleave (the front and back relative position of two groups of heterogeneous shifted rasters also can be changed) successively, on the same group the heterogeneous grating part that pipettes kind grating can not be not overlapping when interleaving.The used parameter of forward and backward grating is as shown in table 1 below, and the III-InP/InGaAsP of V family material grating region effective refractive index
generally elects 3.4 as:
Table 1
| ? | Grating cycle/nm | The sampling period/μ m | The sampling duty ratio | Grating length/μ m | Index modulation | Bragg wavelength/nm |
| Preceding grating | 227.94 | 21.882 | 1/8 | 306.35 | 0.016 | 1550 |
| Back grating | 227.94 | 23.706 | 1/8 | 568.94 | 0.016 | 1550 |
Accompanying drawing 6 and accompanying drawing 7 are respectively forward and backwardly in the forward and backward grating region 1,4 of the present invention in first embodiment to interleave the heterogeneous reflectance spectrum that pipettes kind grating 9,10; From reflectance spectrum, can find out, of the present inventionly interleave a heterogeneous wave-length coverage that pipettes in kind optical grating reflection spectrum three dB bandwidth and can cover 1500nm to 1600nm.The reflectance spectrum of sampled-grating that has same light grid cycle, peak reflection channel spacing, grating length and coupling coefficient with the back Bragg grating 10 of embodiment one is shown in accompanying drawing 8; Can find out by the accompanying drawing 7 and the reflectance spectrum contrast of accompanying drawing 8; Of the present inventionly interleave the heterogeneous kind grating that pipettes and have more smooth peak reflectivity with respect to common sampled-grating; Thereby in wavelength tuning process, the power equalization property of each wavelength channel is better.
Embodiment two:
In this embodiment two; Forward and backward Bragg grating 9,10 all adopts three groups of heterogeneous kind gratings that pipette that interleave; Accompanying drawing 9 is that this embodiment two forward and backward interleaves the heterogeneous kind optical grating construction sketch map that pipettes, and is respectively second, one, three group of heterogeneous kind grating that pipettes from top to bottom.For forward and backward Bragg grating 9,10; According to formula
; M=3, i=1,2,3.The grating initial phase difference that first group heterogeneous pipetted during kind grating adjacent samples week is
=0; Second group heterogeneous pipettes the grating initial phase difference that grating initial phase difference during kind grating adjacent samples week pipettes for
=2 π/3, the three are group heterogeneous during kind grating adjacent samples week and is
=4 π/3.Second and third group is heterogeneous to pipette kind grating and heterogeneously pipettes the direction that kind grating interleaves and see dotted arrow to first group; Adopt to interleave (the front and back relative position of three groups of heterogeneous shifted rasters also can be changed) successively, on the same group the heterogeneous grating part that pipettes kind grating can not be not overlapping when interleaving.Three groups of heterogeneous kind gratings that pipette that interleave have identical grating cycle and sampling period.The used parameter of forward and backward grating is as shown in table 2 below, and the III-InP/InGaAsP of V family material grating region effective refractive index
generally elects 3.4 as:
Table 2
| ? | Grating cycle/nm | The sampling period/μ m | The sampling duty ratio | Grating length/μ m | Index modulation | Bragg wavelength/nm |
| Preceding grating | 227.94 | 14.588 | 1/8 | 306.35 | 0.016 | 1550 |
| Back grating | 227.94 | 16.412 | 1/8 | 541.59 | 0.016 | 1550 |
Accompanying drawing 10 and accompanying drawing 11 are respectively forward and backwardly in the forward and backward grating region 1,4 of the present invention in second embodiment to interleave the heterogeneous reflectance spectrum that pipettes kind grating 9,10; From reflectance spectrum, can find out, of the present inventionly interleave a heterogeneous wave-length coverage that pipettes in kind optical grating reflection spectrum three dB bandwidth and can cover 1500nm to 1600nm.The reflectance spectrum of sampled-grating that has same light grid cycle, peak reflection channel spacing, grating length and coupling coefficient with the back Bragg grating 10 of embodiment two is shown in accompanying drawing 12; Can find out by the accompanying drawing 11 and the reflectance spectrum contrast of accompanying drawing 12; Of the present inventionly interleave the heterogeneous kind grating that pipettes and have more smooth peak reflectivity with respect to common sampled-grating; Thereby in wavelength tuning process, the power equalization property of each wavelength channel is better.Can find out with the reflectance spectrum comparing result of accompanying drawing 11 by accompanying drawing 6 and accompanying drawing 10, accompanying drawing 7 that respectively increase along with interleaving the heterogeneous group number that pipettes kind grating, it is more smooth that reflectance spectrum becomes.
Above embodiment only is used to explain method of the present invention; And be not the restriction to the scope of application of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations to implementation content; Thereby the technical scheme that is equal to also belongs to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (8)
1. semiconductor laser with tunable; This laser longitudinal cross-section passes through and comprises preceding grating region (1), active area (2), phase region (3) and back grating region (4) successively; Preceding grating region (1), phase region (3) and grating region (4) longitudinal section, back mainly comprise upper limiting layer (5), light waveguide-layer (6) and lower limit layer (7) from top to bottom successively; Active area (2) longitudinal section mainly comprises upper limiting layer (5), active layer (8) and lower limit layer (7) from top to bottom successively; The zone that preceding grating region (1) and upper limiting layer (5) intersect is provided with preceding Bragg grating (9); The zone that back grating region (4) and upper limiting layer (5) intersect is provided with back Bragg grating (10), it is characterized in that: preceding Bragg grating (9) and back Bragg grating (10) all adopt and interleave the heterogeneous kind Bragg grating that pipettes.
2. laser according to claim 1 is characterized in that: interleaving the heterogeneous kind Bragg grating that pipettes is that the heterogeneous kind Bragg grating that pipettes of plural groups interleaves the grating that makes, and all are heterogeneous, and to pipette grating cycle, sampling period of kind Bragg grating identical.
3. laser according to claim 2; It is characterized in that: every group of heterogeneous kind Bragg grating that pipettes includes a plurality of sampled-grating periodic structures, and every group of heterogeneous grating initial phase that pipettes sampled-grating periodic structure adjacent in kind Bragg grating has identical phase shift.
4. laser according to claim 3; It is characterized in that: establish and interleave the heterogeneous kind Bragg grating that pipettes and comprise the heterogeneous kind Bragg grating that pipettes of m group, then the heterogeneous initial phase shift of grating
that pipettes the adjacent samples grating periodic structure of kind Bragg grating of i group is (i-1) * 2 π/m.
5. according to each described laser in the claim 1～4, it is characterized in that: the upper surface of preceding grating region (1), active area (2), phase region (3) and back grating region (4) is respectively equipped with first electrode (11), second electrode (12), third electrode (13) and the 4th electrode (14).
6. according to each described laser in the claim 1～4, it is characterized in that: the outer surface of preceding grating region (1) and back grating region (4) is respectively equipped with first anti-reflection film (15) and second anti-reflection film (16).
7. according to claim 3 or 4 described lasers, it is characterized in that: the sampled-grating periodic structure adopts evenly, cuts toe or the Bragg grating of the form of warbling.
8. according to each described a kind of semiconductor laser with tunable in the claim 1～4, it is characterized in that: described semiconductor laser with tunable can be integrated with semiconductor optical amplifier and/or electroabsorption modulator.
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| CN103066494A (en) * | 2013-01-05 | 2013-04-24 | 华中科技大学 | Tunable semiconductor laser |
| CN105119141A (en) * | 2015-09-17 | 2015-12-02 | 华中科技大学 | Dual-wavelength tunable semiconductor laser |
| CN105356292A (en) * | 2015-11-30 | 2016-02-24 | 武汉电信器件有限公司 | Tunable wavelength semiconductor laser |
| CN107425405A (en) * | 2017-06-29 | 2017-12-01 | 武汉电信器件有限公司 | A kind of semiconductor laser with tunable |
| CN112421357A (en) * | 2020-10-08 | 2021-02-26 | 武汉光谷航天三江激光产业技术研究院有限公司 | Frequency modulation type semiconductor seed source for high-power optical fiber laser |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066494A (en) * | 2013-01-05 | 2013-04-24 | 华中科技大学 | Tunable semiconductor laser |
| CN105119141A (en) * | 2015-09-17 | 2015-12-02 | 华中科技大学 | Dual-wavelength tunable semiconductor laser |
| CN105356292A (en) * | 2015-11-30 | 2016-02-24 | 武汉电信器件有限公司 | Tunable wavelength semiconductor laser |
| WO2017092094A1 (en) * | 2015-11-30 | 2017-06-08 | 武汉电信器件有限公司 | Wavelength tunable semiconductor laser |
| CN105356292B (en) * | 2015-11-30 | 2018-11-02 | 武汉电信器件有限公司 | A kind of tunable wavelength semiconductor laser |
| CN107425405A (en) * | 2017-06-29 | 2017-12-01 | 武汉电信器件有限公司 | A kind of semiconductor laser with tunable |
| CN107425405B (en) * | 2017-06-29 | 2019-11-08 | 武汉电信器件有限公司 | A kind of semiconductor laser with tunable |
| CN112421357A (en) * | 2020-10-08 | 2021-02-26 | 武汉光谷航天三江激光产业技术研究院有限公司 | Frequency modulation type semiconductor seed source for high-power optical fiber laser |
| CN112421357B (en) * | 2020-10-08 | 2022-06-07 | 武汉光谷航天三江激光产业技术研究院有限公司 | Frequency modulation type semiconductor seed source for high-power optical fiber laser |
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