CN112421357A - Frequency modulation type semiconductor seed source for high-power optical fiber laser - Google Patents

Frequency modulation type semiconductor seed source for high-power optical fiber laser Download PDF

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CN112421357A
CN112421357A CN202011068245.XA CN202011068245A CN112421357A CN 112421357 A CN112421357 A CN 112421357A CN 202011068245 A CN202011068245 A CN 202011068245A CN 112421357 A CN112421357 A CN 112421357A
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seed source
grating
modulation
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CN112421357B (en
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廖明龙
雷敏
胡阿健
武春风
李强
姜永亮
刘厚康
宋祥
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Wuhan Optical Valley Aerospace Sanjiang Laser Industry Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10084—Frequency control by seeding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10084—Frequency control by seeding
    • H01S3/10092—Coherent seed, e.g. injection locking

Abstract

The invention relates to a frequency modulation type semiconductor seed source for a high-power optical fiber laser, which comprises a multi-section distributed Bragg reflection DBR semiconductor laser, a front grating area, a phase area, an active area and a rear grating area, and also comprises a T-shaped biaser Bias-T, wherein the areas of the laser are respectively controlled by current; and adjusting the direct current injected in the phase region to continuously tune the wavelength of the seed source. The invention has compact structure, small volume and low cost, is suitable for a multi-kilowatt high-power narrow linewidth optical fiber laser, and can greatly improve the SBS threshold of the laser so as to improve the output power of the laser.

Description

Frequency modulation type semiconductor seed source for high-power optical fiber laser
Technical Field
The invention belongs to the field of high-power narrow-linewidth fiber lasers, and particularly relates to a frequency modulation type semiconductor seed source for a high-power fiber laser. The method is mainly used for improving the stimulated Brillouin source scattering threshold of the fiber laser.
Background
With the development of technology and economic growth, higher and higher requirements are put on the power of laser systems in the fields of industrial manufacturing and military defense. The optical fiber laser has the outstanding advantages of high efficiency, small size, excellent beam quality, stable work, strong environmental adaptability and the like, and is widely applied to the field of high-power laser. The single fiber output power is limited, power synthesis is an effective way for further improving the power and brightness of the fiber laser, coherent synthesis, spectrum synthesis and the like all require that sub-beams have narrower line width, and the high-power narrow-line-width fiber laser technology becomes the research focus in the fiber laser field.
In the case of high power, SBS is one of the main factors affecting the further increase of the laser power of the narrow linewidth fiber. People propose various methods to inhibit SBS of high-power narrow-linewidth fiber laser, for example, a high-speed phase modulation method is adopted to broaden the spectrum of a single-frequency seed source, the power spectral density of the seed source is effectively reduced, and the SBS threshold is improved, but the phase modulation mode has complex structure and high cost; for another example, a fiber oscillator seed source scheme composed of Fiber Bragg Gratings (FBGs) is adopted, but the seed source based on the FBGs is of a multi-longitudinal-mode structure, and the seed source of the type can generate significant spectral broadening due to four-wave mixing in the power amplification process, which is not favorable for the application of high-power narrow-linewidth fiber lasers.
Disclosure of Invention
The invention aims to overcome the problems in the prior art, adopts a multi-section DBR semiconductor laser as a seed source of a high-power narrow-linewidth optical fiber laser, realizes the rapid wavelength change of the seed source by injecting modulation current in a phase region, enables the laser wavelength to be continuously and rapidly tuned, changes the laser wavelength according to the intensity change of a modulation signal, realizes the uniform broadening of a laser spectrum, and inhibits the SBS as the seed source of the optical fiber laser.
The invention provides a frequency modulation type semiconductor seed source for a high-power optical fiber laser, which comprises a multi-section distributed Bragg reflection DBR semiconductor laser, a front grating area, a phase area, an active area and a rear grating area which are sequentially arranged, and is characterized by also comprising a T-shaped biaser Bias-T, wherein the areas of the laser are respectively controlled by current, the injection current of the active area provides gain for the laser, the front grating area and the rear grating area are sampling gratings with different periods to form a mode filter, the light reflection spectrums of the front grating area and the rear grating area are moved by current injection, the vernier effect between the two light reflection spectrums generates effective mode selection, the T-shaped biaser Bias-T is electrically connected with the phase area, a cavity mode is translated by the direct current injected into the phase area by the T-shaped biaser Bias-T, and the emergent wavelength of the seed source is modulated by the modulation current injected into the phase area by the Bias-T, realizing uniform broadening of the spectrum of the seed source; and adjusting the direct current injected into the phase region, adjusting the direct current injected into the front grating region and the rear grating region, continuously tuning the wavelength of the seed source, plating a high reflection film on the end face of the rear grating region of the seed source, and plating an anti-reflection film on the end face of the front grating region to realize laser output.
Furthermore, the DBR semiconductor laser is a GaAs-based semiconductor laser, the line width is less than 1MHz, and the optical fiber coupling output power is more than 50 mW. The Side Mode Suppression Ratio (SMSR) is more than 50dB, and the output wavelength of the seed source can cover 1-1.1 μm
Further, the modulation current injected into the phase region through the T-shaped biaser Bias-T is a sawtooth, triangular or noise format signal, the modulation frequency is within 10GHz, or the wavelength is finely adjusted by direct current. The output wavelength of the seed source linearly changes along with the amplitude change of the modulation current, the random adjustability of the 3dB line width of the seed source between 1MHz and 100GHz is realized, and the mode hopping phenomenon is not generated in the wavelength modulation process.
Furthermore, the front grating area, the back grating area and the phase area are all passive materials, the forbidden bandwidth is larger than that of the active area, the active area is made of a multi-quantum well material, and the gain spectrum range can cover 1-1.1 μm.
Further, the active region quantum well material is InxGa1-xAs, changing the atomic ratio of In, x (In)xThe x value at the lower right corner) realizes the central wavelength of 1-1.1 μm lasing, the passive region material is GaAs, the forbidden bandwidth (1.424eV) is larger than that of the quantum well material, photons in the wave band of 1-1.1 μm are not absorbed, and the absorption of photons in the active region can be avoided.
Furthermore, the sampling grating is obtained by sampling a standard distributed Bragg reflection grating, the sampling grating is a comb-shaped reflection spectrum, and the intervals of reflection peaks are
Figure BDA0002714519860000031
ngIs the group refractive index, LsFor the sampling period, a first order bragg grating is used.
And direct current is injected into the front grating area and the rear grating area, so that the position of a grating reflection spectrum is changed, and longitudinal mode selection and wavelength tuning are realized.
Furthermore, the phase area modulation current only modulates the refractive index of the phase area, the output light intensity of the seed source is not changed, no parasitic intensity modulation exists in the frequency modulation process, specifically, the frequency modulation is to modulate the phase area injection current, the effective cavity length of the laser is changed to realize the modulation of the output wavelength, the phase area is made of a passive material, the forbidden bandwidth is larger than that of the active area material, photons generated by the active area pass through the phase area and are not absorbed by free carriers, and the output light intensity of the laser is not influenced.
The direct current is injected into the phase area to realize the fine tuning of the longitudinal mode of the seed source, the direct current in the phase area enables the cavity mode to generate translation, the direct current fine tuning in the phase area is used for finely tuning the wavelength, and the fine tuning amount of the wavelength is the translation amount.
And the seed light with the uniformly broadened spectrum realizes laser output by plating an antireflection film on the end face of the front grating region, and is coupled into the single-mode polarization-maintaining fiber through the focusing lens to realize fiber coupling output (and is fused with an amplification module of the high-power narrow-linewidth ytterbium-doped fiber laser to improve the SBS threshold value of the high-power narrow-linewidth ytterbium-doped fiber laser).
Furthermore, the frequency modulation type semiconductor seed source is suitable for a high-power ytterbium-doped fiber laser with a wave band of 1 mu m and has the power amplification capability of thousands of watts.
The invention adopts a GaAs-based multi-section DBR laser and combines a phase area Bias-T to realize high-speed modulation of current in the phase area, so that the laser wavelength is continuously and quickly tuned, the laser wavelength is changed according to the intensity change of a modulation signal, the uniform broadening of a laser spectrum is realized, and the GaAs-based multi-section DBR laser is used as a seed source of an optical fiber laser and inhibits SBS of the optical fiber laser. The seed source wavelength is rapidly changed by injecting modulation current into the phase region, so that the power spectral density of seed light is reduced, the change amount of the seed source wavelength in the phonon service life is larger than the Brillouin frequency shift amount of the optical fiber, and the phonon number cannot be accumulated, so that the SBS threshold of the narrow-linewidth optical fiber laser is increased, the output power of the high-power narrow-linewidth optical fiber laser is greatly improved, and the phase region has the advantages of small size, compact structure and low cost.
The technical principle of the invention is as follows: in high power narrow linewidth fiber lasers, when the light intensity is high enough, the spontaneous (other than stimulated) brillouin scattered light in the fiber will become very strong; at the moment, the incident light field and the scattered light field generate beat frequency images, and the density and the pressure of the optical fiber medium are changed through the electrostriction effect; with the fluctuation of the medium density, phonons are generated, and an incident light field is further backscattered; as the scattered light gradually increases, acoustic perturbations will be generated quickly, so that when the light intensity reaches the SBS threshold, the phonons and scattered light increase rapidly with respect to each other; the SBS threshold of the optical fiber is related to the spectral width, the wider the spectrum is, the larger the SBS threshold is, namely the spectrum is broadened, and the SBS threshold is improved; in addition, the SBS threshold can also be raised by suppressing the generation of phonons.
The phase region of the multi-section DBR semiconductor laser injects modulation current to cause the concentration change of carriers in the phase region, and the concentration change of the carriers causes the refractive index change of the phase region, so that the effective cavity length of the laser is changed, the emergent frequency of the DBR semiconductor laser is rapidly changed, namely, frequency modulation is generated to widen the laser spectrum, and the SBS threshold is improved. In addition, the frequency shift of the DBR semiconductor laser in the phonon life exceeds the Brillouin frequency shift of the optical fiber, so that phonons cannot be accumulated, and the SBS threshold of the optical fiber laser is further improved.
Compared with the prior art, the invention has compact structure, small volume and low cost, is suitable for a multi-kilowatt high-power narrow linewidth optical fiber laser, and can greatly improve the SBS threshold of the laser so as to improve the output power of the laser.
Drawings
Fig. 1 is a schematic structural diagram of a frequency-modulated semiconductor seed source for a high-power fiber laser according to the present invention.
In the figure: 1-back grating area, 2-phase area, 3-active area, 4-front grating area, 5-T type biaser (Bias-T), 6-focusing lens, 7-single mode polarization maintaining fiber.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are further described below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
As shown in figure 1, the frequency modulation type semiconductor seed source for a high-power optical fiber laser comprises a multi-section distributed Bragg reflection DBR semiconductor laser, a front grating region, a phase region, an active region and a rear grating region which are sequentially arranged, and a T-shaped biaser Bias-T, wherein the regions of the laser are respectively controlled by current, the injection current of the active region provides gain for the laser, the front grating region and the rear grating region are sampling gratings with different periods to form a mode filter, the light reflection spectrums of the front grating region and the rear grating region are moved by current injection, and the vernier effect between the two light reflection spectrums generates effective mode selection,
the T-shaped biaser Bias-T is electrically connected with the phase area, the cavity mode is translated by direct current injected into the phase area by the T-shaped biaser Bias-T, the emergent wavelength of the seed source is modulated by modulation current injected into the phase area by the Bias-T, and the uniform broadening of the spectrum of the seed source is realized; and adjusting the direct current injected into the phase region, adjusting the direct current injected into the front grating region and the rear grating region, continuously tuning the wavelength of the seed source, plating a high reflection film on the end face of the rear grating region of the seed source, and plating an anti-reflection film on the end face of the front grating region to realize laser output.
The DBR semiconductor laser is a GaAs-based semiconductor laser, the line width is less than 1MHz, the optical fiber coupling output power is greater than 50mW, the Side Mode Suppression Ratio (SMSR) is greater than 50dB, and the output wavelength of the seed source can cover 1-1.1 μm.
The modulation current injected into the phase region through the T-shaped biaser Bias-T is a sawtooth, triangular or noise format signal, the modulation frequency is within 10GHz, or the wavelength is finely adjusted by direct current. The output wavelength of the seed source linearly changes along with the amplitude change of the modulation current, the random adjustability of the 3dB line width of the seed source between 1MHz and 100GHz is realized, and the mode hopping phenomenon is not generated in the wavelength modulation process.
The front grating area, the back grating area and the phase area are all made of passive materials, the forbidden bandwidth is larger than that of the active area, the active area is made of multi-quantum well materials, the gain spectrum range can cover 1-1.1 mu m, the wavelength communication field is not used, and the idea of fast tuning is used.
The active region quantum well material is InxGa1-xAs, changing the atomic ratio of In, x (In)xThe x value at the lower right corner) realizes the central wavelength of 1-1.1 μm lasing, the passive region material is GaAs, the forbidden bandwidth (1.424eV) is larger than that of the quantum well material, photons in the wave band of 1-1.1 μm are not absorbed, and the absorption of the photons in the active region can be avoided.
In particular, the sampled grating is a standard distributed Bragg reflection gratingSampling to obtain a comb-shaped reflection spectrum with reflection peak intervals
Figure BDA0002714519860000061
ngIs the group refractive index, LsFor the sampling period, a first order bragg grating is used. And direct current is injected into the front grating area and the rear grating area, so that the position of a grating reflection spectrum is changed, and longitudinal mode selection and wavelength tuning are realized.
The phase area modulation current only modulates the refractive index of the phase area, the output light intensity of the seed source is not changed, no parasitic intensity modulation exists in the frequency modulation process, specifically, the frequency modulation is to modulate the injection current of the phase area, the effective cavity length of the laser is changed to realize the modulation of the output wavelength, the phase area is made of a passive material, the forbidden band width of the phase area is larger than that of the active area, photons generated by the active area pass through the phase area and are not absorbed by free carriers, the output light intensity of the laser is not influenced, and therefore no light intensity modulation exists in the frequency modulation process. The modulation current is a sawtooth, triangular wave or noise format signal, and the peak value of the modulation current is within 10 mA.
The direct current is injected into the phase area to realize the fine tuning of the longitudinal mode of the seed source, the direct current in the phase area enables the cavity mode to generate translation, the wavelength is finely tuned by the direct current fine tuning in the phase area, and the wavelength fine tuning amount is the translation amount.
The seed light with the uniformly broadened spectrum is coupled into the single-mode polarization maintaining fiber through the focusing lens to realize fiber coupling output, and is fused with an amplifying module of the high-power narrow-linewidth ytterbium-doped fiber laser to improve the SBS threshold.
The frequency modulation type semiconductor seed source for the high-power optical fiber laser is suitable for the high-power ytterbium-doped optical fiber laser with a wave band of 1 mu m and has the power amplification capacity of thousands of watts.
Specifically, in this embodiment, the semiconductor seed source is a four-stage DBR semiconductor laser prepared from a GaAs substrate, and is formed by combining a T-type Bias device (Bias-T), a focusing lens, and a polarization maintaining fiber. The four-section DBR semiconductor laser is respectively a front grating area, an active area, a phase area and a rear grating area, the areas of the laser are respectively controlled by current, the injection current of the active area provides gain for the laser, the front grating area and the rear grating area are sampling gratings with different periods to form a mode filter, the reflection spectrum of the gratings is moved by current injection, the vernier effect between the two reflection spectrums generates effective mode selection, the cavity mode is translated by the direct current injected into the phase area by the Bias-T, and the direct current injected into the phase area and the direct current injected into the front grating area and the rear grating area are adjusted to continuously tune the wavelength of a seed source. The end face of a back grating area of the seed source is plated with a high reflection film, the end face of a front grating area is plated with an antireflection film to realize laser output, and the laser output is coupled into a single-mode polarization-maintaining optical fiber through a focusing lens to realize optical fiber coupling output of more than 50 mW.
The active region of the seed source is made of multiple quantum well materials, the gain spectrum range can cover 1-1.1 μm, the materials of the front and rear grating regions and the phase region are wide bandgap semiconductor materials, the injected current has no influence on photons generated in the active region, and the optical gain and the output wavelength are respectively and independently tuned.
The seed source frequency modulation bandwidth is larger than 10GHz, the injection current of the gain area (active area) and the front and back grating areas is changed to enable the laser to work at the wavelength of 1064nm, triangular wave modulation current is applied to the phase area, the output wavelength of the seed source is changed in a triangular wave linear mode, the amplitude of the phase area modulation current is changed to achieve the wavelength scanning range of 100GHz, and the frequency of the phase area modulation current is changed to enable the wavelength chirp rate to be larger than 10GHz17Hz/s. The method is applied to the high-power narrow-linewidth ytterbium-doped fiber laser, the laser wavelength shift amount is larger than the Brillouin frequency shift amount within the service life of a phonon of the ytterbium-doped fiber, phonon accumulation is inhibited, the SBS threshold is improved, and the output of the high-power narrow-linewidth fiber laser in the kilowatt level is realized.
In this embodiment, the total cavity length of the four-section DBR semiconductor laser prepared from the GaAs substrate is 1.5 μm, the active region length is 500 μm, the front grating region length is 390 μm, the back grating region length is 540 μm, and the phase region length is 70 μm. The front and rear sampling gratings of the laser are obtained by sampling a standard distributed Bragg reflection grating, the sampling grating is a comb-shaped reflection spectrum, a first-order Bragg grating is adopted, the grating period is 160nm, and the corresponding Bragg wavelength is 1064 nm. The sampling periods of the front grating and the rear grating are different, the intervals of reflection peaks are different, the sampling period of the front grating is 48.8 microns, the length of the uniform grating is 10 microns, the total sampling period is 8, the sampling period of the rear grating is 54 microns, the length of the uniform grating is 10 microns, and the total sampling period is 10. When the current of the front grating and the rear grating is 0mA, the lasing wavelength is aligned to the 1064nm Bragg wavelength, the injection current of the front grating region and the rear grating region is changed, the comb-shaped reflection spectrum moves, the alignment wavelength is shifted due to the vernier effect, and the purpose of wavelength tuning is achieved. The current of the fixed gain area is 200mA, and the injection current of the front grating area and the injection current of the rear grating area are adjusted within 20mA, so that the tuning of the output wavelength of 1050-. The phase area injects current to change the effective refractive index of the phase area, further changes the effective cavity length of the laser, fixes the injection current of the gain area and the front and back grating areas, and the injection current of the phase area is adjusted and changed within 10mA, so that the output wavelength is finely adjusted within 0.5 nm.
The embodiment shows that the SBS threshold of the high-power narrow-linewidth optical fiber laser can be improved, the output power of a laser system is improved, and the optical fiber laser has the advantages of small size, compact structure, low cost and the like.

Claims (10)

1. A frequency modulation semiconductor seed source for high power optical fiber laser comprises a multi-section distributed Bragg reflection DBR semiconductor laser, which is sequentially a front grating region, a phase region, an active region and a rear grating region, and is characterized by also comprising a T-shaped biaser Bias-T, wherein the laser regions are respectively controlled by current, the injection current of the active region provides gain for the laser, the front grating region and the rear grating region are sampling gratings with different periods to form a mode filter, the light reflection spectrums of the front grating region and the rear grating region are moved by current injection, the vernier effect between the two light reflection spectrums generates effective mode selection, the T-shaped biaser Bias-T is electrically connected with the phase region, a cavity mode is translated by the direct current of the T-shaped biaser Bias-T injected into the phase region, and the exit wavelength of the seed source is modulated by the modulation current of the Bias-T injected into the phase region, realizing uniform broadening of the spectrum of the seed source; and adjusting the direct current injected into the phase region, adjusting the direct current injected into the front grating region and the rear grating region, continuously tuning the wavelength of the seed source, plating a high reflection film on the end face of the rear grating region of the seed source, and plating an anti-reflection film on the end face of the front grating region to realize laser output.
2. A frequency modulated semiconductor seed source for a high power fiber laser as claimed in claim 1, wherein said DBR semiconductor laser is a GaAs based semiconductor laser with a linewidth of less than 1MHz and a fiber coupling output power of greater than 50 mW.
3. A frequency-modulated semiconductor seed source for high-power fiber lasers according to claim 1 or 2, characterized in that the modulation current injected into the phase section by the T-biaser Bias-T is a saw-tooth, triangle wave or noise format signal, the modulation frequency is within 10GHz, or the wavelength is fine-tuned by direct current.
4. The FM semiconductor seed source for high-power optical fiber laser as claimed in claim 3, wherein said front grating region, back grating region and phase region are all passive materials, the forbidden bandwidth is larger than the active region, the active region is multiple quantum well material, the gain spectrum range can cover 1 μm-1.1 μm.
5. A frequency-modulated semiconductor seed source for high power fiber laser as claimed In claim 4, characterized In that the active region quantum well material is InxGa1-xAs, In atomic proportion x is changed to realize the laser emission with the central wavelength of 1-1.1 μm, the passive region material is GaAs, the forbidden band width is larger than that of the quantum well material, and photons with the wave band of 1-1.1 μm are not absorbed.
6. The FM semiconductor seed source for high power fiber laser as claimed in claim 1, wherein said sampling grating is obtained by sampling a standard distributed Bragg reflection grating, the sampling grating is a comb-shaped reflection spectrum, the reflection peak interval is
Figure FDA0002714519850000021
ngIs the group refractive index, LsFor the sampling period, a first order bragg grating is used.
7. The frequency-modulated semiconductor seed source for the high-power optical fiber laser as claimed in claim 3, wherein the phase region modulation current modulates the refractive index of the phase region only, does not change the output light intensity of the seed source, and the frequency modulation process has no parasitic intensity modulation, specifically, the frequency modulation is to modulate the phase region injection current, change the effective cavity length of the laser to realize the modulation of the output wavelength, the phase region is made of passive material, the forbidden bandwidth is larger than that of the active region, photons generated by the active region pass through the phase region and are not absorbed by free carriers, and the output light intensity of the laser is not affected.
8. A frequency-modulated semiconductor seed source for a high-power optical fiber laser as claimed in any one of claims 4-6, wherein the phase region modulation current modulates the refractive index of the phase region only, without changing the output light intensity of the seed source, and the frequency modulation process has no parasitic intensity modulation, specifically, the frequency modulation modulates the phase region injection current, the effective cavity length of the laser is changed to realize the modulation of the output wavelength, the phase region is made of passive material, the forbidden bandwidth is larger than that of the active region material, and photons generated by the active region pass through the phase region without being absorbed by free carriers, and the output light intensity of the laser is not affected.
9. The frequency modulation type semiconductor seed source for the high power optical fiber laser as claimed in claim 8, further comprising a focusing lens and a single mode polarization maintaining fiber, wherein the seed light with the uniformly broadened spectrum is output by coating an anti-reflection film on the end face of the front grating region, and then coupled into the single mode polarization maintaining fiber through the focusing lens to realize fiber coupling output.
10. The application of the frequency modulation type semiconductor seed source for the high-power optical fiber laser is characterized in that the frequency modulation type semiconductor seed source is suitable for the high-power ytterbium-doped optical fiber laser with a wave band of 1 mu m and has the power amplification capacity of thousands of watts.
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN114421281A (en) * 2022-01-12 2022-04-29 浙江大学 Narrow-linewidth output on-chip integrated DBR laser and preparation method thereof

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