CN101001001A - Manufacturing method of low cost DFB laser - Google Patents
Manufacturing method of low cost DFB laser Download PDFInfo
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Abstract
The invention relates to a method for manufacturing a low-cost DFB laser. The semiconductor laser is composed of a lower coating layer, a lower waveguide layer, a active layer, a upper waveguide layer, a upper coating layer and a electrode contact layer, the above items all grow on the InP substrate in a proper sequence, and there are metal electrodes on the substrate and the electrode contact layer, and there is a grating structure on the upper waveguide layer or the lower waveguide layer. Its characters show as follow: the described DFB grating structure is manufactured by via nano-imprint technology. It can be an arbitrary phase shift structure of the grating or arbitrary sampling structure of the grating.
Description
Technical field
The present invention relates to a kind of manufacture method of optical active devices DFB grating, belong to the active optical component technical field.
Background technology
Semiconductor laser is an of paramount importance light source in the optical communication system.Along with the fast development of optical fiber communication, more and more require semiconductor laser to have high speed, narrow linewidth and dynamic single longitudinal mode operation characteristic to long distance, big capacity direction.Generally believe that at present the laser with distributed feedback bragg grating (DFB) is the optimal light source that satisfies long distance, the requirement of high-capacity optical fiber communication system.
The F-P laser spectrum of ordinary construction is many longitudinal modes, and has spectrum widening under High Speed Modulation, makes fiber bandwidth reduce, thereby has limited transmission rate.Distributed Feedback Laser is set up Bragg grating in semiconductor inside, selects by the distributed feed-back realization single longitudinal mode of light.And Distributed Feedback Laser can suppress the moding of common F-P laser in wideer working temperature and current margin, improves the noise characteristic of device greatly.
Because the raster graphic small-sized ((the grizzly bar size is about 100nm) of dfb semiconductor laser, at present popular process generally realizes (adopt best mask aligner also to be difficult to now reach needed machining accuracy, and too expensive) by the method for deep ultraviolet lasers two-beam interference exposure.But because conoscope image is periodically strict, prepared DFB grating will have complete symmetry and equally distributed structure.The symmetry of structure has caused the symmetry of mode profile, and two longitudinal mode phenomenons promptly appear in vibration when two main moulds will appear in such Distributed Feedback Laser.Even because the asymmetry of laser cleavage surface and the asymmetry of end face coating, the appearance single longitudinal mode swashs to be penetrated, but because the uncertainty of the caused phase place of this asymmetry, may make the longitudinal mode on the left side that sharp penetrating taken place, sharp penetrating takes place in the longitudinal mode that also might be the right, the uncertainty that causes the laser emission wavelength can't satisfy in the dwdm system the accurate requirement to the laser excitation wavelength.And in actual modulated was used, the mode hopping phenomenon might appear in this laser with even DFB grating, has had a strong impact on its service behaviour.
For radiant power being focused on a main mould, the gain for threshold value difference of each oscillation mode is increased, just need destroy the symmetry of optical grating construction consciously, thus the symmetry of the forward and reverse capable ripple feedback of disturbance.Effective method is evenly to introduce λ/4 or λ/8 phase shifts in the distribution DFB grating the most at present.If the phase shift of λ/4 or λ/8 is arranged in the centre of DFB-LD, no matter the position phase at laser cavity surface place how, laser can both be operated under the single longitudinal mode condition, and can accurately control the excitation wavelength of laser and reduce to warble to improve the performance of device.But this DFB optical grating construction with phase shift can not be realized by the method for interfering exposure, and the method cost of manufacture of employing electron beam exposure is too high.Adopt the cost of method two inches epitaxial wafers of making (evenly being covered with the DFB grating) of electron beam exposure to be approximately 3000 dollars, and need more than ten hours.
Summary of the invention
The objective of the invention is at the deficiency that adopts double beam interferometry or electron beam exposure method on the existing semiconductor laser preparing grating, a kind of manufacturing method of low cost DFB laser based on nanometer embossing has been proposed, it has overcome common double beam interferometry effectively can't make phase-shifted grating, DWDM multi-wavelength Distributed Feedback Laser can't be on same epitaxial wafer, made simultaneously, the shortcoming of multi-wavelength dfb laser array or DFB-EA array can't be on same chip, made; Simultaneously it has also overcome the electron beam exposure legal system and has made the too high shortcoming of volume production cost.
The objective of the invention is to realize by the following technical solutions: a kind of manufacturing method of low cost DFB laser, this semiconductor laser by in the InP substrate successively the under-clad layer, lower waveguide layer, active layer in the growth, on ducting layer and top covering and contact electrode layer form, metal electrode is arranged respectively on substrate and contact electrode layer, have the DFB optical grating construction on last ducting layer or lower waveguide layer, it is characterized in that: described DFB optical grating construction adopts nanometer embossing to make.
Aforesaid manufacturing method of low cost DFB laser is characterized in that: adopt the method for hot padding to make, or adopt the method for cold blocking (UV-cured impression) to make, or adopt the method for little contact printing to make.
Aforesaid manufacturing method of low cost DFB laser is characterized in that the method for described hot padding is:
(1) utilize direct electronic beam writing technology to make the template that has the nanometer grating pattern; (2) wait to make the DFB grating on even coating one deck thermal plastic high polymer photoresist on the ducting layer; Photoresist on the last ducting layer is heated to more than the glass transition temperature, utilizes mechanical force that template is pressed in the photoresist layer of hot mastication, and keep high temperature, high pressure a period of time, the thermal plastic high polymer photoresist is filled in the nanostructure of template; (3) treat the photoresist cooling curing after, release pressure break away to be gone up ducting layer with impression block; (4) then last ducting layer is carried out reactive ion etching (RIE) and remove residual photoresist, promptly can copy optical grating construction; (5) last, as mask, adopt the method for dry etching or wet etching with the photoresist that impresses out, on last ducting layer, produce needed DFB structure.
Described manufacturing method of low cost DFB laser is characterized in that the DFB grating has uniform periodic structure; λ/4 or λ/8 phase-shift structures are perhaps arranged.
Described manufacturing method of low cost DFB laser is characterized in that: utilize direct electronic beam writing technology to make the nanometer grating pattern of multi-wavelength on same template.
The present invention has the following advantages:
The present invention adopts nanometer embossing to make the grating of Distributed Feedback Laser, has overcome the shortcoming of above-mentioned common double beam interferometric method, can produce the DFB grating with any phase-shift structure, improves the single mode rate of finished products of Distributed Feedback Laser.
" nano impression " is a kind of brand-new nano graph clone method.Be characterized in having ultrahigh resolution, high yield, low cost.High-resolution is because it does not have diffraction phenomena in the optical exposure and the scattering phenomenon in the electron beam exposure.High yield is because it can parallel processing as optical exposure, makes hundreds and thousands of devices simultaneously.Low cost is because it needs complicated optical system or need complicated electromagnetic focusing system as electron beam exposure apparatus unlike the optical exposure machine.Therefore nano impression is expected to become a kind of suitability for industrialized production technology, has fundamentally opened up the bright prospects that various nano-devices are produced.
The price of a common high-precision electron beam exposure apparatus is more than 2,000,000 dollars, and the nano-imprinting apparatus average price that can process 50 nano-scale linewidths is 200,000 dollars, has only 1/10th of electron beam exposure apparatus price.Adopt the cost of method two inches epitaxial wafers of making (evenly being covered with the DFB grating) of electron beam exposure to be approximately 3000 dollars, and need more than ten hours; And the epitaxial wafer of same size adopts cost that the method for nano impression makes grating less than 50 dollars, have only electron beam exposure cost 1/tens, and only need time of a few minutes.At present because the production efficiency of Distributed Feedback Laser itself is lower and rate of finished products is not high, the cost of the Distributed Feedback Laser of TO encapsulation is about 30 dollars, this is for the use of FTTH (Fiber to the home), cost is still too high, can improve the production efficiency of laser and improve its rate of finished products and adopt nanometer embossing to make the DFB grating, thereby reduce cost, finally satisfy the instructions for use of FTTH.
Adopt nano-imprinting method to make the technology of grating, except being used for making common Distributed Feedback Laser, outside the phase-shifted grating structure Distributed Feedback Laser, can on same epitaxial wafer, make multichannel complete DWDM laser series, can on same chip, make multi-wavelength Distributed Feedback Laser chip array, even can on same chip, make the DFB-EA array or the tunable dfb laser array of integrated multi-wavelength, have common interferometric method or the unrivaled superiority of electron beam lithography method.The technology that adopts nano impression to make the DFB grating is expected to become a kind of suitability for industrialized production technology, has fundamentally opened up the bright prospects that various nano-devices are produced.
Description of drawings
The process flow diagram of Fig. 1---typical nano impression.Wherein, 11 impression blocks, 12 photoresists, 13 epitaxial wafers.
Fig. 2---the embodiment of the invention 1 has the DFB tunable laser of uniform grating.Wherein, 21 impression blocks, 22 photoresists, ducting layer on 23,24 active areas, 25 lower waveguide layers, 26 substrates.
Fig. 3---the embodiment of the invention 2 has the DFB tunable laser of λ/4 phase-shift structures.Wherein, 31 making ides are pulled, 32 photoresists, ducting layer on 33,34 active areas, 35 lower waveguide layers, 36 substrates.
Fig. 4---be the semiconductor laser typical light spectrogram of Fig. 3 chip.
Fig. 5---the embodiment of the invention 3 has the DFB tunable laser of sampled-grating.Wherein, 51 impression blocks, 52 photoresists, ducting layer on 53,54 active areas, 55 lower waveguide layers, 56 substrates, 510 left sampled grating area, 511 active areas+phase region, 512 right sampled grating area.
Fig. 6---the embodiment of the invention 4 is made multi-wavelength Distributed Feedback Laser chip array on same chip.Wherein, 61 impression blocks, 62 photoresists, ducting layer on 63,64 active areas, 65 lower waveguide layers, 66 substrates.
Fig. 7---the embodiment of the invention 5 is made multichannel complete DWDM chip of laser series on same epitaxial wafer.Wherein, 71 epitaxial wafers.
Make integrated multi-wavelength DFB-EA array on Fig. 8---the embodiment of the invention 6 same chips.Wherein, 81-88 laser, 810DFB laser array, 811 multi-mode couplers, 812 electroabsorption modulators.
Embodiment
The present invention makes the DFB grating of optical active devices such as semiconductor laser by adopting nanometer embossing.This semiconductor laser be the under-clad layer of growing successively in the InP substrate, lower waveguide layer, active layer, on ducting layer and top covering and contact electrode layer, metal electrode is arranged respectively on substrate and contact electrode layer, on last ducting layer or lower waveguide layer, have distributed feedback bragg grating (DFB) structure.Adopt nanometer embossing to make the method for DFB grating, it is low to have cost of manufacture, the characteristics that production efficiency height and grating resolution are high.
The solution of the present invention is applicable to and adopts hot press printing technology to make the DFB grating; Be applicable to and adopt UV-cured stamping technique to make the DFB grating; Be applicable to the method making DFB grating that adopts little contact printing.
The scheme that employing of the present invention receives stamping technique to make the DFB grating is applicable to the making of all optical active devices gratings; Be applicable to the making of common even DFB grating; Be applicable to the making of DFB grating with any phase-shift structure; Be applicable to the making of DFB grating with any sampling structure.
The scheme that employing nanometer embossing of the present invention is made the DFB grating is applicable in the making of single wavelength Distributed Feedback Laser chip; Be applicable to and on same epitaxial wafer, make the Distributed Feedback Laser chip series of multichannel complete DWDM simultaneously with serial wavelength; Be applicable to the Distributed Feedback Laser chip array of on same chip, producing multi-wavelength; Be applicable to integrated opto-electronic device, as the preparing grating of opto-electronic devices such as DFB-EA externally modulated laser chip and semiconductor laser with tunable.
The present invention is described further below in conjunction with drawings and Examples.
Fig. 1 is the typical technological process of adopting the nanometer hot press printing technology to make the DFB grating.Generally include five step process, (1) utilizes direct electronic beam writing technology to make Si or the SiO2 template 11 that has the nanometer grating pattern, and is waiting that epitaxial wafer 13 surfaces that make the DFB grating evenly are coated with one deck thermal plastic high polymer photoresist 12 (as PMMA materials); (2) photoresist on the epitaxial wafer 13 12 is heated to more than the glass transition temperature, utilize mechanical force template 11 to be pressed in 12 layers of the photoresists of hot mastication, and keep high temperature, high pressure a period of time, be that the thermal plastic high polymer photoresist is filled in the nanostructure of template; (3) treat photoresist 12 cooling curings after, release pressure breaks away from epitaxial wafers 13 with impression block 11; (4) then epitaxial wafer 13 is carried out reactive ion etching (RIE) and remove residual photoresist, promptly can copy optical grating construction; (5) last, as mask, adopt the method for dry etching or wet etching with the photoresist that impresses out, on epitaxial wafer 13, produce needed DFB structure.
The manufacture method of cold blocking (UV-cured impression) is as follows: at first make the film version that has the nanometer grating pattern, the film plate material must use the quartz that can allow ultraviolet ray penetrate; Then on the epitaxial wafer surface of waiting to make the DFB grating evenly coating one deck low-viscosity, to the liquid macroimolecule photoresist of ultraviolet light sensitivity; The film version with after epitaxial wafer is aimed at, is pressed into photoresist layer with template and irradiating ultraviolet light is shaped the sclerosis of photoresist polymerization reaction take place; Carry out the demoulding then, adopt the RIE etching to remove residual photoresist; At last with the photoresist that impresses out as mask, adopt the method for dry etching or wet etching, on epitaxial wafer, produce needed DFB structure.
The manufacture method of little contact printing: at first make the template that has the nanometer grating pattern; Be coated with one deck liquid on the surface of template then; Will scribble liquid template and wait that the epitaxial wafer surface that makes the DFB grating contact, make monofilm in place formation one deck self assembly that epitaxial wafer contacts with template; At last, as mask, etching is produced needed DFB structure on epitaxial wafer with the monofilm of self assembly.
The semiconductor laser schematic diagram with homogeneous texture DFB grating of Fig. 2 for adopting nanometer embossing to make.This semiconductor laser be in InP substrate 26, grow successively under-clad layer and lower waveguide layer 25, active layer 24, on ducting layer 23 and top covering and contact electrode layer (not drawing among the figure), metal electrode is arranged respectively on substrate 26 and contact electrode layer, on last ducting layer 23, have distributed feedback bragg grating.Wherein grating is that the employing nano-imprinting method is made and has homogeneous texture.
The semiconductor laser schematic diagram with λ/4 phase-shift structure DFB gratings of Fig. 3 for adopting nanometer embossing to make.This semiconductor laser be in InP substrate 36, grow successively under-clad layer and lower waveguide layer 35, active layer 34, on ducting layer 33 and top covering and contact electrode layer (not drawing among the figure), metal electrode is arranged respectively on substrate and contact electrode layer, on last ducting layer 33, have distributed feedback bragg grating.Wherein grating is to adopt nano-imprinting method to make, and has λ/4 phase-shift structures at the center of laser grating.No matter the position phase at laser cavity surface place how, laser can both be operated under the single longitudinal mode condition.Fig. 4 is the sharp spectrum of penetrating of the semiconductor laser with λ/4 phase-shift structure gratings of employing nanometer embossing making.
Fig. 5 makes the schematic diagram of the sampled-grating of semiconductor laser with tunable for adopting nanometer embossing.This semiconductor laser with tunable be in InP substrate 56, grow successively under-clad layer and lower waveguide layer 55, sandwich layer 54, on ducting layer 54 and top covering and contact electrode layer (not drawing among the figure), metal electrode is arranged respectively on substrate and contact electrode layer.This semiconductor laser with tunable comprises left sampled grating area 510, active area+phase region 511 and right sampled grating area 512 from left to right successively.Wherein the optical grating construction of left and right sides grating region is sampled-grating, and the sampling period is respectively d1 and d2, and (d1 among the figure＜d2), its grating all is to adopt nano-imprinting method to make.
Fig. 6 makes the schematic diagram of multi-wavelength dfb laser array for adopting nanometer embossing on same chip.Nanometer embossing of the present invention can be used to make common Distributed Feedback Laser with uniform grating except aforesaid, Distributed Feedback Laser with phase-shifted grating structure, and have beyond the grating of tunable laser of sampling period, another important application is to be conveniently used for making single-chip multi-wavelength DFB array.Only (n 〉=2) Distributed Feedback Laser of n is arranged on same chip among the figure, the grating cycle of every laser is all inequality, wherein the cycle of the 1st laser is Λ 1 (corresponding excitation wavelength is λ 1), the cycle of i laser is Λ i (corresponding excitation wavelength is λ i), the cycle of n laser is Λ n (corresponding excitation wavelength is λ n), and Λ 1＞Λ 2＞... Λ n, then every center excitation wavelength that laser is all different again, and λ 1＞... λ i＞...＞λ n.
Fig. 7 adopts nanometer embossing to make the schematic diagram of multichannel complete DWDM with Distributed Feedback Laser series on same epitaxial wafer.Nanometer embossing is existing the unrivaled superiority of common interference technique aspect the making DWDM laser.In dwdm system was used, all lasers all required to have the different wave length with uniformly-spaced.The DFB grating that adopts double beam interferometry to make, the optical grating construction of full wafer epitaxial wafer all is a uniformity, all lasers all are operated on the same wavelength.Therefore need to adopt a plurality of epitaxial wafers to make the different grating cycles respectively, just can obtain the chip of laser of needed serial wavelength.Adopt nanometer embossing in the present invention, the imprint mold plate is made into the different cycles, and just can produce 40 complete channel spacings on same epitaxial wafer 71 is the DWDM chip of laser series of 100GHz, and the excitation wavelength of every laser is λ 1, λ 2, λ 39, and λ 40; Even can adopt and once impress manufacture craft obtains 80 passages simultaneously on same epitaxial wafer 50GHz complete DWDM chip of laser series at interval.
Fig. 8 is the schematic diagram of the integrated multi-wavelength DFB-EA chip array (as 8 wavelength arrays) that adopts nanometer embossing and make on same chip.Adopt nanometer embossing to be produced on the grating of the optical active devices of high integration,, have common interferometric method or the unrivaled superiority of electron beam lithography method as DFB-EA chip, tunable Distributed Feedback Laser chip etc.Adopt nanometer embossing can on same chip, produce the DFB grating of complete a plurality of wavelength simultaneously, and can in each grating, all add λ/4 or λ/8 phase shifts at an easy rate.Integrated device among the figure is made up of three ends, and first end is a dfb laser array 810, and thereon by eight lasers 81～88, its DFB grating is to adopt nanometer embossing to make, and the center excitation wavelength of each laser is all inequality.Second end is a multi-mode coupler 811, and it is single laser beam with the laser coupled of laser array.The 3rd end is an electroabsorption modulator 812, and it adopts Signals in Laser Shu Jinhang High Speed Modulation.
Claims (6)
1, a kind of manufacturing method of low cost DFB laser, this semiconductor laser by in the InP substrate successively the under-clad layer, lower waveguide layer, active layer in the growth, on ducting layer and top covering and contact electrode layer form, metal electrode is arranged respectively on substrate and contact electrode layer, have the DFB optical grating construction on last ducting layer or lower waveguide layer, it is characterized in that: described DFB optical grating construction adopts nanometer embossing to make.
2, manufacturing method of low cost DFB laser as claimed in claim 1 is characterized in that: adopt the method for hot padding to make, or adopt the cold blocking method of UV-cured impression to make, or adopt the method for little contact printing to make.
3, manufacturing method of low cost DFB laser as claimed in claim 2 is characterized in that the method for described hot padding is:
(1) utilize direct electronic beam writing technology to make the template that has the nanometer grating pattern; (2) wait to make the DFB grating on even coating one deck thermal plastic high polymer photoresist on the ducting layer; Photoresist on the last ducting layer is heated to more than the glass transition temperature, utilizes mechanical force that template is pressed in the photoresist layer of hot mastication, and keep high temperature, high pressure a period of time, the thermal plastic high polymer photoresist is filled in the nanostructure of template; (3) treat the photoresist cooling curing after, release pressure break away to be gone up ducting layer with impression block; (4) then last ducting layer is carried out reactive ion etching (RIE) and remove residual photoresist, promptly can copy optical grating construction; (5) last, as mask, adopt the method for dry etching or wet etching with the photoresist that impresses out, on last ducting layer, produce needed DFB structure.
4,, it is characterized in that the DFB grating has uniform periodic structure as claim 1 or 2 or 3 described manufacturing method of low cost DFB laser; Perhaps have λ/4 or λ/8 phase-shift structures.
5, as claim 1 or 2 or 3 described manufacturing method of low cost DFB laser, it is characterized in that: utilize direct electronic beam writing technology on same template, to make the nanometer grating pattern of multi-wavelength.
6, manufacturing method of low cost DFB laser as claimed in claim 4 is characterized in that: utilize direct electronic beam writing technology to make the nanometer grating pattern of multi-wavelength on same template.
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