CN102931456A - 424GHz quasi-optics frequency selective surface - Google Patents
424GHz quasi-optics frequency selective surface Download PDFInfo
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- CN102931456A CN102931456A CN2012103723200A CN201210372320A CN102931456A CN 102931456 A CN102931456 A CN 102931456A CN 2012103723200 A CN2012103723200 A CN 2012103723200A CN 201210372320 A CN201210372320 A CN 201210372320A CN 102931456 A CN102931456 A CN 102931456A
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Abstract
The invention discloses a 424GHz quasi-optics frequency selective surface comprising multiple rows, wherein each row comprises a plurality of periodic units which are arranged in the same way, the periodic units between the rows are distributed in a staggered manner, any one periodic unit and another two adjacent periodic units on the row adjacent to the row on which the periodic unit are arranged by forming an angle being 60 degrees; each periodic unit is square, the side length of the periodic unit is 160-180um, and each periodic unit comprises a metal layer and a silicon material layer, wherein the metal layer covers the silicon material layer; the thickness of the metal layer is 4-12um, and the thickness of the silicon material layer is 350-420um; the metal layer is integrally shaped like a flat plate and comprises a single dipole and two circular apertures, the dipole is shaped like a groove and positioned at the central position of the metal layer; the two circular apertures are respectively positioned on the two sides of the dipole; and the silicon material layer is integrally shaped like the flat plate and is made of pure silicon materials, the relative dielectric constant is more than 11, and the loss tangent is 10<-5>-10<-4>.
Description
Technical field
The present invention relates to wireless communication field, particularly a kind of 424GHz quasi-optics frequency-selective surfaces.
Background technology
Frequency-selective surfaces (Frequency Selective Surfaces, FSS) is a kind of two-dimensionally periodic structure with frequency selective characteristic.As a kind of novel spatial filter, because it has than the more advantage of conventional filter in millimere-wave band and submillimeter region, thereby have very widely in the military and civilian field and to use, FSS has become a study hotspot in recent years.
Progress along with microwave remote sensing technique, the spaceborne detection system of millimeter wave submillimeter wave has become a main flow trend, its operating frequency forward Terahertz future development, select the surface by frequency of utilization, can realize that multiband is multiplexing, thereby frequency-selective surfaces becomes one of core component in the quasi-optics dividing network.
The frequency-selective surfaces that is used for the quasi-optics dividing network should satisfy following specification requirement:
1, incidence angle is fixed: according to the requirement of dividing network structure, the incidence angle of incident wave is restricted to 45 °, and this just requires to consider this factor when design, to realize best selecting frequency characteristic.
2, low-loss: the loss source of frequency-selective surfaces is more, thermal losses, insertion loss, graing lobe loss etc. are arranged, therefore in design, to consider the characteristic of size, shape and the dielectric layer of periodic pattern unit, with bandwidth, operating frequency, transmission coefficient and the reflection coefficient that reaches the design objective requirement.
3, polarization stability: frequency-selective surfaces should have stable operating characteristic under the excitation of different polarized waves.
The operating frequency of frequency-selective surfaces is relevant with size, and operating frequency is higher, and size is less.In addition, the operating frequency of frequency-selective surfaces is also relevant with its shape.Frequency-selective surfaces under the particular job frequency has specific shape.Frequency-selective surfaces of the prior art has lower operating frequency, such as 54GHz, 150GHz etc.424GHz is typical oxygen absorption peak frequency, has very high using value in the passive detection of submillimeter wave atmosphere.Still not having operating frequency in the prior art is the frequency-selective surfaces of 424G Hz.
Summary of the invention
The object of the invention is to overcome that not have operating frequency in the prior art be the defective of the frequency-selective surfaces of 424G Hz, thereby a kind of 424GHz quasi-optics frequency-selective surfaces is provided.
To achieve these goals, the invention provides a kind of 424GHz quasi-optics frequency-selective surfaces, its working band is 414-434GHz, includes multirow, and every delegation comprises a plurality of periodic units; Periodic unit in each row is placed in an identical manner, and the periodic unit between row and the row is staggered, and arbitrary periodic unit becomes 60 ° to arrange with two periodic units of the next-door neighbour of its adjacent lines of being expert at;
Described periodic unit quadrate, its length of side is between 160-180um; Described periodic unit comprises metal level and silicon material layer, and described metal level is covered in the top of described silicon material layer; The thickness of described metal level is between 4-12um, and the thickness of described silicon material layer is between 350-420um;
The whole one-tenth of described metal level is plate, it comprises single dipole and two circular apertures, and described dipole becomes grooved, is positioned at the center of described metal level, the 1/7-1/6 of frequency corresponding wavelength centered by its length is centered by the width between the 1/24-1/20 of frequency corresponding wavelength; Described two circular apertures lay respectively at the both sides of described dipole; The Width in the diameter of described circular aperture and dipole slit is 1:1.2; Described metal level adopts gilding to realize;
Described silicon material layer is whole to become plate, adopts the pure silicon material to make, and its relative dielectric constant is more than 11, loss angle tangent 10
-5-10
-4
In the technique scheme, the orthogonal or chamfering rectangle of described dipole.
In the technique scheme, be equidistant arrangement about two circular apertures on the described metal level and dipole three, two circular apertures are up and down arrangement placed in the middle.
In the technique scheme, the length of side of described periodic unit is 166um.
In the technique scheme, the thickness of the metal level of described periodic unit is 10um.
In the technique scheme, the thickness of the silicon material layer of described periodic unit is 190um.
The invention has the advantages that: working band is wide, and three dB bandwidth reaches 20GHz; Curve characteristic is precipitous, and is high to the isolation with outer frequency, and selectivity is good; Insertion loss is little, and filtering characteristic is good; Simple in structure, be convenient to processing; Physical characteristics of materials is stable, and characteristic drift is little in actual applications; Centre frequency is 424GHz, and prospect is good in the submillimeter wave atmospheric remote sensing is used.
Description of drawings
Fig. 1 is the vertical view of the periodic unit of frequency-selective surfaces of the present invention;
Fig. 2 is the cutaway view of the periodic unit of frequency-selective surfaces of the present invention;
Fig. 3 is the arrangement mode schematic diagram of frequency-selective surfaces of the present invention;
Fig. 4 is the schematic diagram of the power transfer characteristic curve of frequency-selective surfaces of the present invention;
Fig. 5 is the schematic diagram of the phase characteristic curve of frequency-selective surfaces of the present invention.
Embodiment
Now the invention will be further described by reference to the accompanying drawings.
Frequency-selective surfaces of the present invention comprises a plurality of periodic units, and each periodic unit has identical structure.The below is at first described the structure of periodic unit.
Fig. 1 is the vertical view of the periodic unit of frequency-selective surfaces of the present invention, and Fig. 2 is the cutaway view of the periodic unit of frequency-selective surfaces of the present invention.Can find out from Fig. 1 and Fig. 2, described periodic unit quadrate, its length of side is between 160-180um, and as a kind of optimal way, the length of side of the periodic unit in the present embodiment is 166um.Described periodic unit comprises metal level and silicon material layer, and metal level wherein is covered in the top of described silicon material layer.The thickness of described metal level is between 4-12um, and as a kind of optimal way, the thickness of the metal level in the present embodiment is 10um.The thickness of described silicon material layer is between 350-420um, and as a kind of optimal way, the thickness of the silicon material layer in the present embodiment is 190um.
Described metal level adopts single dipole both sides to load the configuration of circular aperture, and described dipole is positioned at the center of described periodic unit, and in the present embodiment, it is shaped as rectangle, and in other embodiments, its shape also can be the chamfering rectangle.The length of described dipole is about the 1/7-1/6 of centre frequency corresponding wavelength, and the 1/24-1/20 of frequency corresponding wavelength centered by the width is to provide stable passband and operating frequency.Described circular aperture is positioned at the both sides of described dipole, as a preferred implementation, be equidistant arrangement about two circular apertures and dipole three, two circular apertures are up and down arrangement placed in the middle, and the Width in the diameter of circular aperture and dipole slit is 1:1.2.Described metal level can adopt gilding to realize.
Described silicon material layer adopts the pure silicon material to make, and its relative dielectric constant is more than 11, loss angle tangent 10
-5-10
-4, guarantee that the operating characteristic of frequency-selective surfaces is optimized to greatest extent.
It more than is the description to the periodic unit of frequency-selective surfaces of the present invention.The below is illustrated the arrangement mode of described periodic unit.
With reference to figure 3, frequency-selective surfaces of the present invention includes multirow, periodic unit in every delegation is all placed in an identical manner, and row is staggered with the periodic unit between capable, as the edge of a certain periodic unit arranged on left and right sides aliging with the center line of the periodic unit of adjacent lines.This is just so that a periodic unit becomes 60 ° to arrange with two periodic units of the next-door neighbour of its adjacent lines of being expert at, that is: in the summit of the central point of a certain periodic unit top edge, its lower limb both sides, the next line in the central point of the top edge of two periodic units adjacent with this periodic unit (totally two points), the next line in the summit in the periodic unit on the left side adjacent with this periodic unit left side, the next line summit on the periodic unit right side on the right adjacent with this periodic unit link to each other, form an equilateral triangle.
Frequency-selective surfaces of the present invention has good operating characteristic.Fig. 4 is the frequency response curve of frequency-selective surfaces of the present invention, and Fig. 5 is the phase characteristic curve of frequency-selective surfaces of the present invention.Can find out from these two figure, frequency-selective surfaces of the present invention is that the electromagnetism of 414-434GHz all sees through to the frequencies of 45 degree incidents in the course of the work, the electromagnetic wave of other outer frequencies of working frequency range is played the effect of reflection.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although with reference to embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (6)
1. 424GHz quasi-optics frequency-selective surfaces, its working band is 414-434GHz, it is characterized in that, includes multirow, every delegation comprises a plurality of periodic units; Periodic unit in each row is placed in an identical manner, and the periodic unit between row and the row is staggered, and arbitrary periodic unit becomes 60 ° to arrange with two periodic units of the next-door neighbour of its adjacent lines of being expert at;
Described periodic unit quadrate, its length of side is between 160-180um; Described periodic unit comprises metal level and silicon material layer, and described metal level is covered in the top of described silicon material layer; The thickness of described metal level is between 4-12um, and the thickness of described silicon material layer is between 350-420um;
The whole one-tenth of described metal level is plate, it comprises single dipole and two circular apertures, and described dipole becomes grooved, is positioned at the center of described metal level, centered by its length between the 1/7-1/6 of frequency corresponding wavelength, centered by the width between the 1/24-1/20 of frequency corresponding wavelength; Described two circular apertures lay respectively at the both sides of described dipole; The Width in the diameter of described circular aperture and dipole slit is 1:1.2; Described metal level adopts gilding to realize;
Described silicon material layer is whole to become plate, adopts the pure silicon material to make, and its relative dielectric constant is more than 11, loss angle tangent 10
-5-10
-4
2. 424GHz quasi-optics frequency-selective surfaces according to claim 1 is characterized in that, the orthogonal or chamfering rectangle of described dipole.
3. 424GHz quasi-optics frequency-selective surfaces according to claim 1 is characterized in that, is equidistant arrangement about two circular apertures on the described metal level and dipole three, and two circular apertures are up and down arrangement placed in the middle.
4. 424GHz quasi-optics frequency-selective surfaces according to claim 1 is characterized in that, the length of side of described periodic unit is 166um.
5. 424GHz quasi-optics frequency-selective surfaces according to claim 1 is characterized in that, the thickness of the metal level of described periodic unit is 10um.
6. 424GHz quasi-optics frequency-selective surfaces according to claim 1 is characterized in that, the thickness of the silicon material layer of described periodic unit is 190um.
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| CN201210372320.0A CN102931456B (en) | 2012-09-28 | 2012-09-28 | 424GHz quasi-optics frequency selective surface |
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| CN201210372320.0A CN102931456B (en) | 2012-09-28 | 2012-09-28 | 424GHz quasi-optics frequency selective surface |
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| CN102931456B CN102931456B (en) | 2014-12-31 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151580A (en) * | 2013-03-19 | 2013-06-12 | 中国科学院空间科学与应用研究中心 | Double-frequency-band submillimeter wave FSS (frequency selective surface) with loading fractal structure |
| CN106793732A (en) * | 2017-01-03 | 2017-05-31 | 哈尔滨工业大学 | Geometric center type infrared band dual band pass optical window electromagnetic armouring structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5400043A (en) * | 1992-12-11 | 1995-03-21 | Martin Marietta Corporation | Absorptive/transmissive radome |
| US20050179614A1 (en) * | 2004-02-18 | 2005-08-18 | Nagy Louis L. | Dynamic frequency selective surfaces |
-
2012
- 2012-09-28 CN CN201210372320.0A patent/CN102931456B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5400043A (en) * | 1992-12-11 | 1995-03-21 | Martin Marietta Corporation | Absorptive/transmissive radome |
| US20050179614A1 (en) * | 2004-02-18 | 2005-08-18 | Nagy Louis L. | Dynamic frequency selective surfaces |
Non-Patent Citations (2)
| Title |
|---|
| 何显宗: "毫米波带通频率选择表面研究", 《中国优秀硕士学位论文全文数据库》, 15 February 2009 (2009-02-15) * |
| 方春易: "厚屏频率选择表面设计及工艺研究", 《中国优秀硕士学位论文全文数据库》, 6 December 2011 (2011-12-06) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151580A (en) * | 2013-03-19 | 2013-06-12 | 中国科学院空间科学与应用研究中心 | Double-frequency-band submillimeter wave FSS (frequency selective surface) with loading fractal structure |
| CN103151580B (en) * | 2013-03-19 | 2015-03-18 | 中国科学院空间科学与应用研究中心 | Double-frequency-band submillimeter wave FSS (frequency selective surface) with loading fractal structure |
| CN106793732A (en) * | 2017-01-03 | 2017-05-31 | 哈尔滨工业大学 | Geometric center type infrared band dual band pass optical window electromagnetic armouring structure |
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| CN102931456B (en) | 2014-12-31 |
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