CN102931288A - Novel method for preparing noncrystalline/microcrystalline silicon thin-film solar cell - Google Patents
Novel method for preparing noncrystalline/microcrystalline silicon thin-film solar cell Download PDFInfo
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- CN102931288A CN102931288A CN2012104819925A CN201210481992A CN102931288A CN 102931288 A CN102931288 A CN 102931288A CN 2012104819925 A CN2012104819925 A CN 2012104819925A CN 201210481992 A CN201210481992 A CN 201210481992A CN 102931288 A CN102931288 A CN 102931288A
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Abstract
The invention discloses a novel method for preparing a noncrystalline/microcrystalline silicon thin-film solar cell. The novel method is completed by edge polishing, punching, cleaning, electrode extracting and sheet integrating, pre-pressing, high-pressure processing, edge removing, gluing, barking in a curing oven and IV detection of a main glass material. According to the scheme provided by the invention, the problem of higher fragmentation rate caused by the fact that battery components have high probability of being squeezed by rigid objects is solved, and the battery components are packaged in large scale, so that the package efficiency is improved.
Description
Technical field:
The present invention relates to a kind of novel non-/ preparation method of microcrystalline silicon film solar cell;
Be used for promoting selection and the encapsulation technology thereof in non-/ microcrystalline silicon film solar module useful life; that to adopt PVB or the EVA of the anti-soda acid possess the Self-leveling characteristics, anti-steam, good insulating, attractive and durable material be the encapsulating material of amorphous silicon thin-film solar cell; the application of this material realizes the general protection to amorphous silicon thin-film solar cell; make protective layer and amorphous silicon thin-film solar; battery merges fully closely, effectively isolation prevent steam, soda acid liquid enter the erosion that causes non-to improve/microcrystalline silicon film solar cell useful life.
Background technology:
Non-/microcrystalline silicon film solar cell is than other kind, it is good to have low light level performance such as thin-film solar cells such as monocrystalline silicon, polysilicons, low cost of manufacture, and product quality and reliability are high, production technology is simple, production security is high, and environmentally safe is widely used, be not limited to the power station, also can be applicable to the electronic installation of the curve modeling such as architecture-integral (BIPV), automobile, ground photovoltaic building and people's livelihood movable type, such as mobile phone, personal digital assistant (PDA) and pen electricity etc.
Industry at present institute extensively employing non-/ method for packing of microcrystalline silicon film solar cell, have: glass laminates package method, TPT laminating packaging method; Specifically: at home and abroad encapsulate in the modular construction of non-/ microcrystalline silicon film solar cell, generally include substrate/PVB(or EVA)/tempering back-panel glass (or TPT backboard membrane)/aluminium frame; Wherein substrate is as light-absorption layer.These methods exist deficiency and shortcoming separately, are summarized as follows: the glass laminates package method: by PVB fritting control difficulty behind the lamination, electricity conversion is not high; TPT laminating packaging method: complex manufacturing, cost is high.
Summary of the invention:
The purpose of this invention is to provide a kind of novel non-/ preparation method of microcrystalline silicon film solar cell, can accurately control non-/ microcrystalline silicon film solar cell package and satisfy the required structural requirement of photoelectric conversion capacity, simplify each various packaging technology, reduce cost, enhance productivity.
The present invention adopts following technical scheme to realize its goal of the invention, a kind of novel non-/ preparation method of microcrystalline silicon film solar cell, it by main material glass adopt edging, punching, clean, go out that the utmost point closes sheet, precompressed, high pressure, flash trimming, plays glue, curing oven baking, ten technological processes of IV detection finish;
Edging: be not hurt sb.'s feelings for attractive in appearance reaching, improve glass safety and eliminate glass edge stress; Glass improves the efficient of assembly as the back-protective encapsulating material;
Punching: being that certain position at glass punches, mainly is used with drawing battery plus-negative plate;
Clean: cleaning be back-panel glass surface dirt;
Go out the utmost point and close sheet: going out the utmost point is to form backflow for busbar being welded to battery, draws the both positive and negative polarity of battery; Close sheet and be with former of battery add in addition EVA with back-panel glass, the PVB doubling synthesizes one; Its processing step for adopt the cutting of doubling film, cutting to be coated with the tin copper strips, go out the utmost point, bedding PVB, EVA glued membrane, packaging back board, location, flash trimming finish; Described PVB: have another name called polyvinyl butyral resin
,Density 1.07g/cm3, molecular weight from 30-45k. refractive index 1.488 (20 ℃), water absorption rate be not more than 4%, softening temperature 60-65 ℃, vitrification point 66-84 degree (different and different with the degree of polymerization), dissolubility: can be dissolved in most of alcohol/ketone/ether/ester class organic solvent, be insoluble to carbon hydroxyl kind solvent, such as petroleum solvents such as gasoline.Molecular formula: C7H14O, constituent R1]-M]-R2] R3; Described EVA: the copolymer of ethene and vinyl acetate, chemical formula: (CH2-CH2)---(CH-CH2);
Precompressed: the low pressure still is that the battery semi-finished product assembly behind the involution piece heats fritting, makes EVA, the certain thawing of PVB doubling; Its operating procedure is: load, and---chassis enters still, and---chassis goes out the still unloading piece in inspection work---work of low pressure still---;
High pressure: autoclave is that the battery semi-finished product assembly of low pressure still after out carried out HTHP, makes the PVB in the assembly reach certain fusing point, and glass and cell panel adhere to each other;---chassis goes out still, and---chassis enters still, and------autoclave working---unloads assembly---and fills New Parent operating procedure: open the still door to close the still door;
Flash trimming: EVA, PVB surplus to the cell panel edge are removed;
Play glue: gluing be make remove after battery component edge seal effect behind the EVA, PVB surplus;
Curing oven is accelerated: make fluid sealant accelerate flash-off time;
IV test verification: test suite power and conversion efficiency.
Owing to adopted technique scheme, the present invention has realized its goal of the invention preferably, the technical scheme that adopts is that the step of above packaging technology comprises the underlay substrate of preparation being finished solar cell layer, insulation film and base plate for packaging carry out Combined Processing and form solar module, again solar module is carried out heat treatment, install terminal box additional, above-mentioned heat treatment operation is to realize solar module external environment condition atmosphere by autoclave, realize solar module internal environment atmosphere by supporting pumped vacuum systems, further transfer the set-up of control system process conditions by temperature and pressure, solar module is finished heating in the still inter-sync, the pressurization shaping process; Solve battery component and be subject to the problem that rigid extruding causes higher fragmentation rate, also with battery component scale encapsulation, improved packaging efficiency simultaneously.
Embodiment:
Below in conjunction with embodiment content of the present invention is described further.
Embodiment 1:
On the ultra-white float glass substrate, adopt the TCO target by the LPCVD method, the radio-frequency power source frequency is 9.01MHz, according to thin film solar cell of the present invention included step among the preparation method of conductive layer, select deposition parameter, wherein response parameter is as described below: 130 ℃ of underlayer temperatures, power density: 260mW/cm2, pressure: 1.0 * 10
-4Pa, thickness: 500nm.
Embodiment 2:
Have on the TCO conductive layer substrate in film forming, adopt silane, hydrogen, borine, methane as reacting gas, by the PECVD method, the radio-frequency power source frequency is 12.15MHz, according to included step among the preparation method of thin film solar cell usefulness P type Window layer of the present invention, select deposition parameter, wherein response parameter is as described below:
Underlayer temperature: 150 ℃, power density: 350mW/cm2, reaction pressure: 200Pa, silane concentration: 0.5%, borane doping concentration: 0.46%, methane doping content: 7.5%.
The P type microcrystal silicon material with carbon element of preparation is under the precondition of 1um at thickness, its conductivity 0.45S/cm, and band gap is greater than 2.0eV, and crystallization rate is 48.2%.
Underlayer temperature is fixed as 150 ℃, and power density is 350mW/cm
2. silane concentration is 0.5%, and borane doping concentration 0.46% is keeping under the constant condition of total gas flow rate, and carbon silicon is than (CH
4/ SiH
4) between 8.5%～12% scope, change, by adjusting the doping of methane, obtain dark attitude conductivityσ
dBe 0.45S/cm and optical band gap E
gP type microcrystal silicon material with carbon element more than 2.0eV is used for PI transparent float glass substrate film battery with it in conjunction with the carbon dope p/i resilient coating of optimizing and obtains open circuit voltage 147.68V, short-circuit current density 10.32mA/cm
2, fill factor, curve factor 60%, photoelectric conversion efficiency 11.4%.
The purpose of annealing in process is crystal grain thinning, eliminates tissue defects, thereby reaches the purpose that promotes conversion efficiency of solar cell.At the 150 degrees centigrade of dangling bonds that can repair in this crystal in 3 hours of annealing, the effect that the lifting of cell photoelectric conversion efficiency is had.
To sum up obtain, P type microcrystal silicon combines the advantages such as the high electricity of the broad-band gap of P type amorphous silicon and P type microcrystal silicon is led, low light absorption; Be used for battery the lifting of cell photoelectric conversion efficiency is had significant effect.
Claims (1)
- One kind novel non-/ preparation method of microcrystalline silicon film solar cell, it is characterized in that it by main material glass adopt edging, punching, clean, go out that the utmost point closes sheet, precompressed, high pressure, flash trimming, plays glue, curing oven baking, ten technological processes of IV detection finish;Edging: be not hurt sb.'s feelings for attractive in appearance reaching, improve glass safety and eliminate glass edge stress; Glass improves the efficient of assembly as the back-protective encapsulating material;Punching: being that certain position at glass punches, mainly is used with drawing battery plus-negative plate;Clean: cleaning be back-panel glass surface dirt;Go out the utmost point and close sheet: going out the utmost point is to form backflow for busbar being welded to battery, draws the both positive and negative polarity of battery; Close sheet and be with former of battery add in addition EVA with back-panel glass, the PVB doubling synthesizes one; Its processing step for adopt the cutting of doubling film, cutting to be coated with the tin copper strips, go out the utmost point, bedding PVB, EVA glued membrane, packaging back board, location, flash trimming finish; Described PVB: have another name called polyvinyl butyral resin ,Density 1.07g/cm3, molecular weight from 30-45k. refractive index 1.488 (20 ℃), water absorption rate be not more than 4%, softening temperature 60-65 ℃, vitrification point 66-84 degree (different and different with the degree of polymerization), dissolubility: can be dissolved in most of alcohol/ketone/ether/ester class organic solvent, be insoluble to carbon hydroxyl kind solvent, such as petroleum solvents such as gasoline; Molecular formula: C7H14O, constituent R1]-M]-R2] R3; Described EVA: the copolymer of ethene and vinyl acetate, chemical formula: (CH2-CH2)---(CH-CH2);Precompressed: the low pressure still is that the battery semi-finished product assembly behind the involution piece heats fritting, makes EVA, the certain thawing of PVB doubling; Its operating procedure is: load, and---chassis enters still, and---chassis goes out the still unloading piece in inspection work---work of low pressure still---; High pressure: autoclave is that the battery semi-finished product assembly of low pressure still after out carried out HTHP, makes the PVB in the assembly reach certain fusing point, and glass and cell panel adhere to each other;---chassis goes out still, and---chassis enters still, and------autoclave working---unloads assembly---and fills New Parent operating procedure: open the still door to close the still door;Flash trimming: EVA, PVB surplus to the cell panel edge are removed;Play glue: gluing be make remove after battery component edge seal effect behind the EVA, PVB surplus;Curing oven is accelerated: make fluid sealant accelerate flash-off time;IV test verification: test suite power and conversion efficiency.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104819925A CN102931288A (en) | 2012-11-25 | 2012-11-25 | Novel method for preparing noncrystalline/microcrystalline silicon thin-film solar cell |
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| CN2012104819925A CN102931288A (en) | 2012-11-25 | 2012-11-25 | Novel method for preparing noncrystalline/microcrystalline silicon thin-film solar cell |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030178056A1 (en) * | 2002-03-25 | 2003-09-25 | Sanyo Electric Co., Ltd. | Solar cell module |
| CN101162742A (en) * | 2007-11-27 | 2008-04-16 | 上海耀华皮尔金顿玻璃股份有限公司 | Solar photovoltaic interlining curtain wall glass manufacturing process |
| CN102444226A (en) * | 2011-09-19 | 2012-05-09 | 东旭集团有限公司 | Process for fabricating photoelectric curtain wall glass |
-
2012
- 2012-11-25 CN CN2012104819925A patent/CN102931288A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030178056A1 (en) * | 2002-03-25 | 2003-09-25 | Sanyo Electric Co., Ltd. | Solar cell module |
| CN101162742A (en) * | 2007-11-27 | 2008-04-16 | 上海耀华皮尔金顿玻璃股份有限公司 | Solar photovoltaic interlining curtain wall glass manufacturing process |
| CN102444226A (en) * | 2011-09-19 | 2012-05-09 | 东旭集团有限公司 | Process for fabricating photoelectric curtain wall glass |
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Application publication date: 20130213 |