CN102931104A - Compact intelligent power driving module and packaging method thereof - Google Patents
Compact intelligent power driving module and packaging method thereof Download PDFInfo
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- CN102931104A CN102931104A CN2012104523540A CN201210452354A CN102931104A CN 102931104 A CN102931104 A CN 102931104A CN 2012104523540 A CN2012104523540 A CN 2012104523540A CN 201210452354 A CN201210452354 A CN 201210452354A CN 102931104 A CN102931104 A CN 102931104A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
The invention discloses a method for packaging a compact intelligent power driving module, which comprises the steps of: providing a frame; respectively arranging multiple groups of driving signal lead wire pins and multiple slide holders at the opposite inner sides of the frame; respectively taking two adjacent slide holders as one group to bend to form a group of functional signal lead wire modules; setting an insulating layer on each group of the driving signal lead wire modules; arranging a high voltage control chip on each of the insulating layers, and respectively making each of the high voltage control chip to get close to a group of the slide holders correspondingly; arranging a metal-oxide -semiconductor field effect transistor (MOSFET) tube on each of the slide holders; and electrically connecting the high voltage control chips and the MOSFET tubes with the frame through metal wires. Furthermore, the invention discloses a compact intelligent power driving module; on the basis of the design of the frame structure and the chip mounting method in a certain packaging size, the demand of packaging multiple high voltage control chips in different power situations is achieved, so as to form a single-phase intelligent power driving module and a three-phase intelligent power driving module which are more widely used in the current, voltage and compact place fields.
Description
Technical field
The invention belongs to the encapsulation technology field, relate in particular to a kind of compact type intelligent power driver module and method for packing thereof.
Background technology
In order to improve energy efficiency, promote energy-saving and emission-reduction, it is very great to promote the high efficiency motor meaning in the motor of consumer electronics and general industry application.The core of the drive circuit of high efficiency motor mainly is the intelligent power driver module, and in the encapsulating structure R﹠D process of intelligent power driver module, the designer need to face how to implement based Robust Design, optimization technological process, raising yield, reduce cost, a lot of practical problems such as enhance production capacities.The primary breach that addresses these problems is the structural design of intelligent power driver module itself, wherein the design of modular structure and interconnection mode proposes greatly challenge to product development personnel's imagination, and the factors such as device application, reliability and market have greatly restricted the creationary performance of developer.
In the existing power driver module frame structure as shown in Figure 1, comprise high voltage control chip (HVIC) 10, MOSFET chip 20, bootstrap diode 30, each high voltage control chip 10 and a bootstrap diode 30 are shared a slide holder, totally 6 slide holder (not shown).In certain package dimension, in case described slide holder size is set, the size of described high voltage control chip 10 and MOSFET chip 20 all can be subject to the restriction of slide holder size, can not realize the more encapsulation requirement of high-power driving.If realize the more powerful output requirement of power driver module, then the size of described high voltage control chip 10 and MOSFET chip 20 and slide holder size can be along with increases.All reach in the situation of technological limits at wiring density and lead spacing, must increase the packaging body volume like this.Thereby can not adapt to compact occasion of installing.
Summary of the invention
The purpose of this invention is to provide a kind of compact type intelligent power driver module and method for packing thereof, make based in certain package dimension, design by frame structure and chip mounting method, realize that a plurality of high voltage control chips realize package requirements in the different capacity occasion, to form single-phase intelligent power driver module and the three-phase intelligent power driver module that can be applied in widely electric current, voltage and compact occasion field.
In order to address the above problem, the invention provides a kind of method for packing of compact type intelligent power driver module, comprising:
One framework is provided;
Establish many groups in described framework one inboard and drive the signal lead module;
Establishing a plurality of slide holders with described framework one inboard another relative inboard, with two adjacent described slide holders be one group to a plurality of described slide holders groupings;
Respectively by forming one group of function signal leadthrough module after every group of described slide holder bending;
Drive the signal lead module at every group and establish insulating barrier;
At each described insulating barrier one high voltage control chip is installed, each described high voltage control chip is distinguished correspondingly near one group of described slide holder;
Establish the MOSFET pipe at each described slide holder;
Described high voltage control chip, MOSFET pipe are electrically connected by metal wire with framework.
The number of the terminal pin that further, arranges in every group of described driving signal lead module is five to eight.
Preferably, two terminal pins in every group of described driving signal lead module are established described insulating barrier at least.
Preferably, the method for packing of described compact type intelligent power driver module is included on each terminal pin that arranges in every group of described driving signal lead module and all establishes a reinforced hole.
Further, the method for packing of described compact type intelligent power driver module comprises that the width of remaining terminal pin in every group of described driving signal lead module of ratio that the width of a terminal pin in every group of described driving signal lead module is arranged is wide.
Further, the method for packing of described compact type intelligent power driver module is included on the terminal pin of wider width in every group of described driving signal lead module and establishes a bootstrap diode.
Preferably, the material of described insulating barrier employing is epoxy resin thin film.
Preferably, the material of the metal wire of described electrical connection employing is gold or copper cash.
Further, each described high voltage control chip drives respectively two described MOSFET pipes adjacent thereto.
Further, the compact type intelligent power driver module of described method for packing formation is single-phase intelligent power driver module and three-phase intelligent power driver module.
According to another side of the present invention, a kind of compact type intelligent power driver module is provided, comprising:
Framework;
Many groups drive the signal lead module, are formed on an inboard of described framework;
A plurality of slide holders are formed on another inboard of described framework, drive the signal lead modules with described many groups and are oppositely arranged;
Multiple function signal lead module is to be formed on the described framework after one group of bending by two adjacent described slide holders respectively;
Insulating barrier is arranged on every group and drives on the signal lead module;
The high voltage control chip is arranged on each described insulating barrier, and each described high voltage control chip is respectively correspondingly near one group of described slide holder;
The MOSFET pipe is arranged on each described slide holder; And
Metal wire is electrically connected described high voltage control chip, MOSFET pipe with framework.
Preferably, the number of the terminal pin that has of every group of described driving signal lead module is five to eight.
Preferably, two terminal pins in every group of described driving signal lead module are provided with insulating barrier at least.
Preferably, in the described compact type intelligent power driver module, comprise being arranged on every group of reinforced hole on each terminal pin in the described driving signal lead module.
Further, in the described compact type intelligent power driver module, comprise that the width of remaining terminal pin in every group of described driving signal lead module of Width of every group of terminal pin in the described driving signal lead module is wide.
Further, in the described compact type intelligent power driver module, comprise the bootstrap diode on the terminal pin that is arranged on wider width in every group of described driving signal lead module.
Preferably, the material of described insulating barrier employing is epoxy resin thin film.
Preferably, the material of described metal wire employing is gold or copper cash.
Further, each described high voltage control chip drives respectively two described MOSFET pipes adjacent thereto.
Further, described compact type intelligent power driver module is single-phase intelligent power driver module and three-phase intelligent power driver module.
As seen from the above technical solution, compact type intelligent power driver module disclosed by the invention and method for packing thereof have following advantage:
1. described compact type intelligent power driver module comprises a framework, and be provided with many groups at described framework and drive signal lead modules and multiple function signal lead modules, and each high voltage control chip is bonding and be isolated on every group of described driving signal lead module by insulating barrier respectively, rather than be installed in special slide holder, therefore save the slide holder that each described high voltage control chip is installed, and encapsulation volume is reduced, therefore, can realize the built-in motor installation.
2. described compact type intelligent power driver module can be according to the power stage requirement, the size of correspondingly regulating each described high voltage control chip by the size of adjusting each described insulating barrier, and according to each described insulating barrier size, in every group of described driving signal lead module, select the terminal pin of some to be fixedly connected with corresponding each described insulating barrier.Therefore, the present invention can be suitable for different chip sizes, chip power and function can diversification.
3. each pin every group of described driving signal lead module is equipped with reinforced hole, can strengthen the adhesion of described framework and plastic packaging material.
4. in every group of described driving signal lead module, on the wider terminal pin of width setting a bootstrap diode can be set, because described bootstrap diode and described high voltage control integrated chip are on same framework, therefore, Reliability Enhancement between each chip has also reduced the extra cost that mounts.Simultaneously, described framework can also be installed the peripheral element with natural activity in vacant part, for example increases Resistor-Capacitor Unit, to realize automatic temperature-adjusting control etc.
As seen, the present invention is based in certain package dimension, design by frame structure and chip mounting method, realize that a plurality of high voltage control chips realize package requirements in the different capacity occasion, to form single-phase intelligent power driver module and the three-phase intelligent power driver module that can be applied in widely electric current, voltage and compact occasion field.
Description of drawings
Fig. 1 is prior art middle frame structural representation;
Fig. 2 is the flow chart of the method for packing of the compact type intelligent power driver module in the embodiment of the invention;
Fig. 3 is the compact type intelligent power driver module middle frame structural representation in the embodiment of the invention;
Fig. 4 is the schematic side view that the compact type intelligent power driver module mesohigh control chip in the embodiment of the invention is connected with terminal pin;
Fig. 5 is the framework schematic diagram of installing in the compact type intelligent power driver module in the embodiment of the invention behind the chip;
Fig. 6 is the structural representation that has bootstrap diode behind compact type intelligent power driver module chips in the embodiment of the invention and the framework bonding;
Fig. 7 is the structural representation that has bootstrap diode and Resistor-Capacitor Unit behind compact type intelligent power driver module chips in the embodiment of the invention and the framework bonding;
Fig. 8 is the structural representation that does not have bootstrap diode behind compact type intelligent power driver module chips in the embodiment of the invention and the framework bonding;
Fig. 9 is the compact type intelligent power driver module chips of the embodiment of the invention two and the structural representation behind the framework bonding.
Wherein, description of reference numerals is as follows:
100 frameworks; 110 drive the signal lead module; 120 slide holders; 130 function signal leadthrough modules; 140 reinforced holes; 210 high voltage control chips; The 220MOSFET pipe; 230 bootstrap diodes; The R Resistor-Capacitor Unit; 300 insulating material; 310 are electrically connected.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization in the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public implementation.
Take flow chart shown in Figure 2 as example, in conjunction with Fig. 3 to Fig. 6, the method for packing of a kind of compact type intelligent power driver module provided by the invention is described in detail.Described method for packing comprises:
S1: referring to Fig. 3, provide a framework 100.
S2: referring to Fig. 3, Fig. 6 to Fig. 8, be provided with many groups in an inboard of described framework 100 and drive signal lead module 110.
The number of the terminal pin that can arrange in every group of described driving signal lead module 110 is five to eight.In the present embodiment, referring to Fig. 6, the number of the terminal pin that arranges such as driving signal lead module as described in every group 110 is six, is respectively the first terminal pin (111), the second terminal pin (112), the 3rd terminal pin (113), the 4th terminal pin (114), the 5th terminal pin (115) and the 6th terminal pin (116); Referring to Fig. 7, the number of the terminal pin that arranges such as driving signal lead module as described in every group 110 is seven, is respectively the first terminal pin (111), the second terminal pin (112), the 3rd terminal pin (113), the 4th terminal pin (114), the 5th terminal pin (115), the 6th terminal pin (116) and the 7th terminal pin (117); Referring to Fig. 8, the number of the terminal pin that arranges such as driving signal lead module as described in every group 110 is five, then be respectively the first terminal pin (111), the second terminal pin (112), the 3rd terminal pin (113), the 4th terminal pin (114), the 5th terminal pin (115), the rest may be inferred, gives unnecessary details no longer one by one.
Preferably, all establish a reinforced hole 140 on each pin in every group of described driving signal lead module 110, can strengthen described framework 100 and subsequent installation in the chip on the above-mentioned terminal pin and the adhesion between plastic-sealed body.
Referring to Fig. 6, as need to a terminal pin in driving signal lead module 110 as described in every group being installed by one bootstrap diode, preferably, the width of remaining terminal pin in every group of described driving signal lead module 110 of ratio that the width of a terminal pin in every group of described driving signal lead module 110 is arranged is wide, in order to follow-uply can described bootstrap diode be installed at the described terminal pin of described wider width.In the present embodiment, as the width with the first terminal pin (111) in the driving signal lead module 110 as described in every group arrange wider can be at the described bootstrap diode of described the first terminal pin (111) installation so that follow-up.Referring to Fig. 8, as need to a terminal pin in driving signal lead module 110 as described in every group not being installed by one bootstrap diode, it is wide then to need not the width than remaining terminal pin that the width of a terminal pin in every group of described driving signal lead module 110 is arranged, at this moment, the terminal pin that arranges in every group of described driving signal lead module 110 is five.
Further, referring to Fig. 6, the first terminal pin (111) in every group of described driving signal lead module 110 is provided with described bootstrap diode 230.Because described bootstrap diode 230 is integrated on the same framework with described high voltage control chip 210, therefore, the Reliability Enhancement between each chip has also reduced the extra cost that mounts.Simultaneously, referring to Fig. 7, described framework 100 can also be installed the peripheral element with natural activity in vacant part, for example increases Resistor-Capacitor Unit R, to realize automatic temperature-adjusting control etc.
In addition, in the present embodiment, described the first terminal pin (111), the second terminal pin (112), the 3rd terminal pin (113), the 4th terminal pin (114), the 5th terminal pin (115), the 6th terminal pin (116) though and the set positions of the 7th terminal pin as shown in Figure 7, be not limited to position relationship shown in Figure 7.
S3: referring to Fig. 3, establishing a plurality of slide holders 120 with described framework one inboard another relative inboard.Many groups number of described driving signal lead module requires to determine according to power stage, then the number of a plurality of described slide holders 120 is the twice of many groups number of described driving signal lead module, that is to say, can be with adjacent two described slide holder 120 be one group to a plurality of described slide holders 120 groupings.
S4: referring to Fig. 3, form one group of function signal leadthrough module 130 by the direction away from described function signal leadthrough module 110 after every group of described slide holder bending respectively.
The number of the terminal pin that wherein, arranges in every group of described function signal leadthrough module 130 is three.Number such as the terminal pin that arranges in driving signal lead module 110 as described in every group is five, and the sign of the terminal pin that then arranges in every group of described function signal leadthrough module 130 can be the the the 6th (130), the 7th the (131) and the 8th terminal pin (132); Number such as the terminal pin that arranges in driving signal lead module 110 as described in every group is six, and the sign of the terminal pin that then arranges in every group of described function signal leadthrough module 130 can be the the the 7th (131), the 8th the (132) and the 9th terminal pin (133); Number such as the terminal pin that arranges in driving signal lead module 110 as described in every group is seven, and the sign of the terminal pin that then arranges in every group of described function signal leadthrough module 130 can be the the the 8th (132), the 9th the (133) and the tenth terminal pin (134).Described function signal leadthrough module 110 and the relative both sides that drive signal lead module 130 and be separately positioned on described framework 100.
In addition, in the present embodiment, though the set positions of three terminal pins that arrange in every group of described function signal leadthrough module 130 as shown in Figure 7, be not limited to position relationship shown in Figure 7.
S5: referring to Fig. 4, Fig. 6 to Fig. 8, drive signal lead module 110 at every group and establish insulating barrier 300.In the present embodiment, two terminal pins in every group of described driving signal lead module 110 are established described insulating barrier 300 at least.
Except terminal pin that described bootstrap diode 230 is installed and install the terminal pin of Resistor-Capacitor Unit R, remaining two terminal pin in every group of described driving signal lead module 110 are established described insulating barrier 300.
That is to say, with the terminal pin that described insulating barrier 300 is bonding can be for more than two, therefore, can be according to the power stage requirement, the size of each described insulating barrier 300 can be adjusted, and then can adjust the number of the terminal pin in the every group of described driving signal lead module 110 that is fixedly connected with corresponding each described insulating barrier.
Preferably, the material of described insulating barrier 300 employings can be epoxy resin thin film.Therefore, described insulating barrier has good bonding force, can be used for the bonding terminal pin that is in contact with it and chip.
S6: referring to Fig. 4 and Fig. 5, at each described insulating barrier 300 a high voltage control chip 210 is installed, each described high voltage control chip 210 is distinguished correspondingly near one group of described slide holder.
Because the size of described insulating barrier 300 can be adjusted, therefore, the size that is installed in the high voltage control chip 210 on each described insulating barrier 300 also can be adjusted thereupon, and therefore, the present invention can be suitable for different chip sizes, chip power and function can diversification.And, each described high voltage control chip 210 is fixed and is isolated on every group of described driving signal lead module 110 by the described insulating barrier 210 under it respectively, rather than be installed in special slide holder, therefore save the slide holder that each described high voltage control chip 210 is installed, and encapsulation volume is reduced, therefore, can realize the built-in motor installation.
S7: referring to Fig. 5, establish MOSFET pipe 220 at each described slide holder.
S8: referring to Fig. 6 to Fig. 8, described high voltage control chip 210, MOSFET pipe 220 is electrically connected by metal wire 310 with framework 100.
Therefore, each described high voltage control chip 210 drives respectively two described MOSFET pipes 220 adjacent thereto.
Preferably, the material of the metal wire 310 of described electrical connection 310 employings is gold or copper cash.
Therefore, the present invention is based in certain package dimension, behind step S1 to S8, realize that a plurality of high voltage control chips are in different capacity occasion realization package requirements, to form single-phase intelligent power driver module and the three-phase intelligent power driver module that can be applied in widely electric current, voltage and compact occasion field, referring to Fig. 9.
The present invention also provides a kind of compact type intelligent power driver module, and described compact type intelligent power driver module is formed by the method for packing of described compact type intelligent power driver module.Described compact type intelligent power driver module comprises:
Preferably, the number of the terminal pin that has of every group of described driving signal lead module 110 is five to eight.In the present embodiment, referring to Fig. 6, the number of the terminal pin that arranges such as driving signal lead module as described in every group 110 is six, is respectively the first terminal pin (111), the second terminal pin (112), the 3rd terminal pin (113), the 4th terminal pin (114), the 5th terminal pin (115) and the 6th terminal pin (116); Referring to Fig. 7, the number of the terminal pin that arranges such as driving signal lead module as described in every group 110 is seven, is respectively the first terminal pin (111), the second terminal pin (112), the 3rd terminal pin (113), the 4th terminal pin (114), the 5th terminal pin (115), the 6th terminal pin (116) and the 7th terminal pin (117); Referring to Fig. 8, the number of the terminal pin that arranges such as driving signal lead module as described in every group 110 is five, then is respectively the first terminal pin (111), the second terminal pin (112), the 3rd terminal pin (113), the 4th terminal pin (114), the 5th terminal pin (115).
Preferably, in the described compact type intelligent power driver module, also comprise being arranged on every group of reinforced hole 140 on each terminal pin in the described driving signal lead module 110, can strengthen described framework 100 and subsequent installation in the chip on the above-mentioned terminal pin and the adhesion between plastic-sealed body.
In the present embodiment, as need to a terminal pin in driving signal lead module 110 as described in every group not being installed by one bootstrap diode, it is wide then to need not the width than remaining terminal pin that the width of a terminal pin in every group of described driving signal lead module 110 is arranged, at this moment, the terminal pin that arranges in every group of described driving signal lead module 110 is five; Bootstrap diode as described in installing such as a terminal pin that need to be in driving signal lead module 110 as described in every group, preferably, in the described compact type intelligent power driver module, the width that also comprises remaining terminal pin in every group of described driving signal lead module of Width of every group of terminal pin in the described driving signal lead module is wide, in order to follow-uply can described bootstrap diode be installed at the described terminal pin of described wider width.In the present embodiment, as the width with the first terminal pin (111) in the driving signal lead module 110 as described in every group arrange wider can be at the described bootstrap diode of described the first terminal pin (111) installation so that follow-up.
Further, referring to Fig. 6, in the described compact type intelligent power driver module, also comprise being arranged on every group of described bootstrap diode 230 on the first terminal pin (111) in the described driving signal lead module 110.Because described bootstrap diode 230 is integrated on the same framework with described high voltage control chip 210, therefore, the Reliability Enhancement between each chip has also reduced the extra cost that mounts.Simultaneously, referring to Fig. 7, described framework 100 can also be installed the peripheral element with natural activity in vacant part, for example increases Resistor-Capacitor Unit R, to realize automatic temperature-adjusting control etc.
Preferably, in the described compact type intelligent power driver module, also comprise being arranged at least the insulating barrier 300 on remaining two terminal pin except described bootstrap diode or the terminal pin of installation Resistor-Capacitor Unit are installed in every group of described driving signal lead module 110.
In addition, with the terminal pin that described insulating barrier 300 is bonding can be for more than two, therefore, can be according to the power stage requirement, the size of each described insulating barrier 300 can be adjusted, and then can adjust the number of the terminal pin in the every group of described driving signal lead module 110 that is fixedly connected with corresponding each described insulating barrier.
Preferably, the material of described insulating barrier 300 employings can be epoxy resin thin film.Therefore, described insulating barrier has good bonding force, can be used for the bonding terminal pin that is in contact with it and chip.
Because the size of described insulating barrier 300 can be adjusted, therefore, the size that is installed in the high voltage control chip 210 on each described insulating barrier 300 also can be adjusted thereupon, and therefore, the present invention can be suitable for different chip sizes, chip power and function can diversification.And, each described high voltage control chip 210 is fixed and is isolated on every group of described driving signal lead module 110 by the described insulating barrier 300 under it respectively, rather than be installed in special slide holder, therefore save the slide holder that each described high voltage control chip 210 is installed, and encapsulation volume is reduced, therefore, can realize the built-in motor installation.
Preferably, the material of described electrical connection 310 employings is gold or copper cash.
As seen, the compact type intelligent power driver module that the present invention proposes, in certain package dimension, design by frame structure and chip mounting method, realize that a plurality of high voltage control chips realize package requirements in the different capacity occasion, to form single-phase intelligent power driver module and the three-phase intelligent power driver module that can be applied in widely electric current, voltage and compact occasion field.
Although the present invention with preferred embodiment openly as above; but it is not to limit claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (20)
1. the method for packing of a compact type intelligent power driver module comprises:
One framework is provided;
Establish many groups in described framework one inboard and drive the signal lead module;
Establishing a plurality of slide holders with described framework one inboard another relative inboard, with two adjacent described slide holders be one group to a plurality of described slide holders groupings;
Respectively by forming one group of function signal leadthrough module after every group of described slide holder bending;
Drive the signal lead module at every group and establish insulating barrier;
At each described insulating barrier one high voltage control chip is installed, each described high voltage control chip is distinguished correspondingly near one group of described slide holder;
Establish the MOSFET pipe at each described slide holder;
Described high voltage control chip, MOSFET pipe are electrically connected by metal wire with framework.
2. method for packing as claimed in claim 1 is characterized in that, the number of the terminal pin that arranges in every group of described driving signal lead module is five to eight.
3. method for packing as claimed in claim 2 is characterized in that, two terminal pins in every group of described driving signal lead module are established described insulating barrier at least.
4. method for packing as claimed in claim 2 is characterized in that, is included on each terminal pin that arranges in every group of described driving signal lead module and all establishes a reinforced hole.
5. method for packing as claimed in claim 2 is characterized in that, comprises that the width of remaining terminal pin in every group of described driving signal lead module of ratio that the width of a terminal pin in every group of described driving signal lead module is arranged is wide.
6. method for packing as claimed in claim 5 is characterized in that, is included on the terminal pin of wider width in every group of described driving signal lead module and establishes a bootstrap diode.
7. method for packing as claimed in claim 1 is characterized in that, the material that described insulating barrier adopts is epoxy resin thin film.
8. method for packing as claimed in claim 1 is characterized in that, the material of the metal wire that described electrical connection is adopted is gold or copper cash.
9. method for packing as claimed in claim 1 is characterized in that, each described high voltage control chip drives respectively two described MOSFET pipes adjacent thereto.
10. method for packing as claimed in claim 1 is characterized in that, the compact type intelligent power driver module that described method for packing forms is single-phase intelligent power driver module and three-phase intelligent power driver module.
11. a compact type intelligent power driver module comprises:
Framework;
Many groups drive the signal lead module, are formed on an inboard of described framework;
A plurality of slide holders are formed on another inboard of described framework, drive the signal lead modules with described many groups and are oppositely arranged;
Multiple function signal lead module is to be formed on the described framework after one group of bending by two adjacent described slide holders respectively;
Insulating barrier is arranged on every group and drives on the signal lead module;
The high voltage control chip is arranged on each described insulating barrier, and each described high voltage control chip is respectively correspondingly near one group of described slide holder;
The MOSFET pipe is arranged on each described slide holder; And
Metal wire is electrically connected described high voltage control chip, MOSFET pipe with framework.
12. compact type intelligent power driver module as claimed in claim 11 is characterized in that, the number of the terminal pin that every group of described driving signal lead module has is five to eight.
13. compact type intelligent power driver module as claimed in claim 12 is characterized in that, two terminal pins in every group of described driving signal lead module are provided with insulating barrier at least.
14. compact type intelligent power driver module as claimed in claim 12 is characterized in that, comprises being arranged on every group of reinforced hole on each terminal pin in the described driving signal lead module.
15. compact type intelligent power driver module as claimed in claim 12 is characterized in that, comprises that the width of remaining terminal pin in every group of described driving signal lead module of Width of every group of terminal pin in the described driving signal lead module is wide.
16. compact type intelligent power driver module as claimed in claim 15 is characterized in that, comprises the bootstrap diode on the terminal pin that is arranged on wider width in every group of described driving signal lead module.
17. compact type intelligent power driver module as claimed in claim 11 is characterized in that, the material that described insulating barrier adopts is epoxy resin thin film.
18. compact type intelligent power driver module as claimed in claim 11 is characterized in that, the material that described metal wire adopts is gold or copper cash.
19. compact type intelligent power driver module as claimed in claim 11 is characterized in that, each described high voltage control chip drives respectively two described MOSFET pipes adjacent thereto.
20. compact type intelligent power driver module as claimed in claim 11 is characterized in that, described compact type intelligent power driver module is single-phase intelligent power driver module and three-phase intelligent power driver module.
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| CN2012104523540A CN102931104A (en) | 2012-11-12 | 2012-11-12 | Compact intelligent power driving module and packaging method thereof |
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| CN2012104523540A CN102931104A (en) | 2012-11-12 | 2012-11-12 | Compact intelligent power driving module and packaging method thereof |
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Application publication date: 20130213 |