CN102928131B - 一种石英谐振梁式微压力传感器芯片 - Google Patents
一种石英谐振梁式微压力传感器芯片 Download PDFInfo
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- CN102928131B CN102928131B CN201210380890.4A CN201210380890A CN102928131B CN 102928131 B CN102928131 B CN 102928131B CN 201210380890 A CN201210380890 A CN 201210380890A CN 102928131 B CN102928131 B CN 102928131B
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- quartz resonance
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- 239000010453 quartz Substances 0.000 title claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000003466 welding Methods 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 15
- 239000012528 membrane Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 244000062793 Sorghum vulgare Species 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 235000019713 millet Nutrition 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
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- Measuring Fluid Pressure (AREA)
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CN201210380890.4A CN102928131B (zh) | 2012-10-09 | 2012-10-09 | 一种石英谐振梁式微压力传感器芯片 |
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CN201210380890.4A CN102928131B (zh) | 2012-10-09 | 2012-10-09 | 一种石英谐振梁式微压力传感器芯片 |
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CN102928131A CN102928131A (zh) | 2013-02-13 |
CN102928131B true CN102928131B (zh) | 2014-11-05 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103940548B (zh) * | 2014-04-15 | 2015-10-21 | 西安交通大学 | 一种双端固支石英梁谐振式真空度传感器 |
CN105301344B (zh) * | 2015-09-24 | 2018-04-13 | 西安电子科技大学 | 基于驱动梁阵列的石英谐振式直流电压传感器芯片 |
CN105628264B (zh) * | 2016-03-23 | 2018-01-26 | 吉林大学 | 基于同步共振的高灵敏度压电压阻电容叠加力敏传感器 |
CN108254106B (zh) * | 2018-01-30 | 2020-05-19 | 中国科学院半导体研究所 | 一种硅硅玻璃硅四层结构谐振式mems压力传感器制备方法 |
US11146039B2 (en) * | 2019-05-22 | 2021-10-12 | Applied Optoelectronics, Inc. | Temperature controlled multi-channel transmitter optical subassembly and transceiver module including same |
CN110501098B (zh) * | 2019-09-20 | 2020-11-20 | 合肥工业大学 | 一种基于双压力膜和弱耦合谐振系统的高灵敏微压传感器 |
CN113091984A (zh) * | 2021-04-08 | 2021-07-09 | 中国科学院空天信息创新研究院 | 一种谐振式高压传感器及其制作方法 |
CN113697761B (zh) * | 2021-08-25 | 2023-07-07 | 中国电子科技集团公司第四十九研究所 | 一种隔离封装结构的谐振压力敏感芯片探头及其封装方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5113698A (en) * | 1990-02-26 | 1992-05-19 | Sundstrand Data Control, Inc. | Vibrating beam transducer drive system |
CN1485599A (zh) * | 2002-09-26 | 2004-03-31 | 中国科学院电子学研究所 | 梁膜一体结构谐振梁压力传感器芯片及制造方法 |
CN1986385A (zh) * | 2006-12-22 | 2007-06-27 | 北京航空航天大学 | 一种“中”字形谐振式硅微机械压力传感器 |
CN101672710A (zh) * | 2009-10-14 | 2010-03-17 | 西安交通大学 | 梁膜结合微压传感器 |
CN202204625U (zh) * | 2011-09-21 | 2012-04-25 | 中国电子科技集团公司第四十九研究所 | 梁膜结构石英压力谐振元件 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004132913A (ja) * | 2002-10-11 | 2004-04-30 | Toyo Commun Equip Co Ltd | 感圧素子、及びこれを用いた圧力センサ |
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- 2012-10-09 CN CN201210380890.4A patent/CN102928131B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5113698A (en) * | 1990-02-26 | 1992-05-19 | Sundstrand Data Control, Inc. | Vibrating beam transducer drive system |
CN1485599A (zh) * | 2002-09-26 | 2004-03-31 | 中国科学院电子学研究所 | 梁膜一体结构谐振梁压力传感器芯片及制造方法 |
CN1986385A (zh) * | 2006-12-22 | 2007-06-27 | 北京航空航天大学 | 一种“中”字形谐振式硅微机械压力传感器 |
CN101672710A (zh) * | 2009-10-14 | 2010-03-17 | 西安交通大学 | 梁膜结合微压传感器 |
CN202204625U (zh) * | 2011-09-21 | 2012-04-25 | 中国电子科技集团公司第四十九研究所 | 梁膜结构石英压力谐振元件 |
Non-Patent Citations (1)
Title |
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JP特开2004-132913A 2004.04.30 * |
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Effective date of registration: 20201026 Address after: No.19 Chuanghui Road, Chang'an District, Xi'an City, Shaanxi Province 710119 Patentee after: Shaanxi Lin Tak inertia Electric Co.,Ltd. Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Patentee before: XI'AN JIAOTONG University |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A quartz resonant beam micro pressure sensor chip Effective date of registration: 20230414 Granted publication date: 20141105 Pledgee: Pudong Development Bank of Shanghai Limited by Share Ltd. Xi'an branch Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd. Registration number: Y2023610000277 |
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Granted publication date: 20141105 Pledgee: Pudong Development Bank of Shanghai Limited by Share Ltd. Xi'an branch Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd. Registration number: Y2023610000277 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A quartz resonant beam micro pressure sensor chip Granted publication date: 20141105 Pledgee: Pudong Development Bank of Shanghai Limited by Share Ltd. Xi'an branch Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd. Registration number: Y2024610000094 |
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