CN102918655A - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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Publication number
CN102918655A
CN102918655A CN2011800260179A CN201180026017A CN102918655A CN 102918655 A CN102918655 A CN 102918655A CN 2011800260179 A CN2011800260179 A CN 2011800260179A CN 201180026017 A CN201180026017 A CN 201180026017A CN 102918655 A CN102918655 A CN 102918655A
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CN
China
Prior art keywords
electrode layer
dorsum electrode
substrate
solar cell
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800260179A
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English (en)
Chinese (zh)
Inventor
裵道园
刘永三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN102918655A publication Critical patent/CN102918655A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
CN2011800260179A 2011-01-25 2011-10-06 太阳能电池及其制造方法 Pending CN102918655A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2011-0007515 2011-01-25
KR1020110007515A KR101189432B1 (ko) 2011-01-25 2011-01-25 태양전지 및 이의 제조방법
PCT/KR2011/007406 WO2012102455A1 (en) 2011-01-25 2011-10-06 Solar cell and method for manufacturing the same

Publications (1)

Publication Number Publication Date
CN102918655A true CN102918655A (zh) 2013-02-06

Family

ID=46581006

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800260179A Pending CN102918655A (zh) 2011-01-25 2011-10-06 太阳能电池及其制造方法

Country Status (5)

Country Link
EP (1) EP2529411A4 (de)
JP (1) JP2014503130A (de)
KR (1) KR101189432B1 (de)
CN (1) CN102918655A (de)
WO (1) WO2012102455A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105009304A (zh) * 2013-03-12 2015-10-28 韩国能源研究技术研究所 具有背面缓冲层的太阳能电池及其制造方法
CN110061075A (zh) * 2019-04-26 2019-07-26 圣晖莱南京能源科技有限公司 一种金属Na掺杂的CIGS太阳能电池及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105140309B (zh) * 2014-06-04 2017-10-03 北京创昱科技有限公司 一种薄膜太阳能电池及其制备方法
JP2018056233A (ja) * 2016-09-27 2018-04-05 積水化学工業株式会社 太陽電池

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011215A (en) * 1997-12-18 2000-01-04 United Solar Systems Corporation Point contact photovoltaic module and method for its manufacture
CN1983568A (zh) * 2005-12-14 2007-06-20 韩国科学技术院 集成薄膜太阳能电池及其制造方法
CN101030589A (zh) * 2006-02-27 2007-09-05 三洋电机株式会社 光生伏打装置
US20100035052A1 (en) * 2005-11-02 2010-02-11 John Farah Polyimide substrate bonded to other substrate
EP2169724A1 (de) * 2007-06-04 2010-03-31 Kaneka Corporation Integrierte dünnschichtsolarzelle und verfahren zu ihrer herstellung
WO2011002212A2 (ko) * 2009-06-30 2011-01-06 엘지이노텍주식회사 태양광 발전장치 및 이의 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101460580B1 (ko) * 2008-02-20 2014-11-12 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
KR101081292B1 (ko) * 2009-06-30 2011-11-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011215A (en) * 1997-12-18 2000-01-04 United Solar Systems Corporation Point contact photovoltaic module and method for its manufacture
US20100035052A1 (en) * 2005-11-02 2010-02-11 John Farah Polyimide substrate bonded to other substrate
CN1983568A (zh) * 2005-12-14 2007-06-20 韩国科学技术院 集成薄膜太阳能电池及其制造方法
CN101030589A (zh) * 2006-02-27 2007-09-05 三洋电机株式会社 光生伏打装置
EP2169724A1 (de) * 2007-06-04 2010-03-31 Kaneka Corporation Integrierte dünnschichtsolarzelle und verfahren zu ihrer herstellung
WO2011002212A2 (ko) * 2009-06-30 2011-01-06 엘지이노텍주식회사 태양광 발전장치 및 이의 제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105009304A (zh) * 2013-03-12 2015-10-28 韩国能源研究技术研究所 具有背面缓冲层的太阳能电池及其制造方法
CN110061075A (zh) * 2019-04-26 2019-07-26 圣晖莱南京能源科技有限公司 一种金属Na掺杂的CIGS太阳能电池及其制备方法
CN110061075B (zh) * 2019-04-26 2020-06-26 圣晖莱南京能源科技有限公司 一种金属Na掺杂的CIGS太阳能电池及其制备方法

Also Published As

Publication number Publication date
JP2014503130A (ja) 2014-02-06
KR101189432B1 (ko) 2012-10-10
WO2012102455A1 (en) 2012-08-02
EP2529411A1 (de) 2012-12-05
EP2529411A4 (de) 2014-07-09
KR20120086204A (ko) 2012-08-02

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Application publication date: 20130206