CN102918655A - Solar cell and method for manufacturing the same - Google Patents

Solar cell and method for manufacturing the same Download PDF

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Publication number
CN102918655A
CN102918655A CN2011800260179A CN201180026017A CN102918655A CN 102918655 A CN102918655 A CN 102918655A CN 2011800260179 A CN2011800260179 A CN 2011800260179A CN 201180026017 A CN201180026017 A CN 201180026017A CN 102918655 A CN102918655 A CN 102918655A
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electrode layer
dorsum electrode
substrate
solar cell
hole
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裵道园
刘永三
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Disclosed are a solar cell and a method for manufacturing the same. The solar cell includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, and a window layer on the buffer layer. The lateral surfaces of the first through holes are inclined with respect to the top surface of the substrate.

Description

Solar cell and manufacture method thereof
Technical field
The present invention relates to a kind of solar cell and manufacture method thereof.
Background technology
Recently, along with the increase of energy consumption, a kind of exploitation that solar energy is converted to the solar cell of electric energy is implemented.
Especially, solar cell based on CIGS is widely used, wherein, solar cell based on CIGS is a PN heterojunction device, and this device has a supporting substrate structure that comprises the glass support substrate, metal back electrode layer, P type based on light absorbing zone, resilient coating, the N-type transparent electrode layer of CIGS.
In addition, in order to increase the efficient of solar cell, various researchs have been carried out.
Summary of the invention
We's invention provides a kind of solar cell and manufacture method thereof with reliability of raising.
According to embodiment, solar cell comprises substrate, the dorsum electrode layer on the substrate, the light absorbing zone on the dorsum electrode layer, the resilient coating on the light absorbing zone, and the Window layer on the resilient coating.The side surface of the first through hole tilts with respect to the top surface of substrate.
According to embodiment, the method for making solar cell comprises: form dorsum electrode layer at substrate, the part of etching dorsum electrode layer is exposed the top surface of substrate; And form light absorbing zone, resilient coating and Window layer at dorsum electrode layer.When this part of etching dorsum electrode layer, laser beam shines on the substrate obliquely with respect to the top surface of substrate.
As mentioned above, according to embodiment, the side surface that is separated into the dorsum electrode layer of a plurality of dorsum electrode layers by the first through hole tilts with respect to substrate.Therefore, when the first through hole forms because the thermal shock of laser beam so that burr inevitably produce.
In addition, the first through hole can be avoided covering unsuccessfully with respect to the inclined surface of supporting substrate, thereby can improve the reliability of solar cell.
Description of drawings
Fig. 1 is the plane graph that illustrates according to the solar generator of embodiment;
Fig. 2 illustrates the cutaway view that Fig. 1 locates to intercept along A-A ';
Fig. 3 is the amplification view that B place among Fig. 2 is shown; And
Fig. 4 to 7 is the cutaway views that illustrate according to the manufacture method of the solar cell of embodiment.
Embodiment
In the description of present embodiment, be appreciated that, when a layer (or film), zone, pattern or structure be pointed out that another substrate, layer (or film), zone, substrate or pattern " on " or during D score, it can be direct or indirect substrate at other, layer (or film), the zone, on substrate or the pattern, or one or a plurality of intermediate layer also may exist.This position of this described layer has been described with reference to figure.
For convenient or clear and definite, in the accompanying drawing demonstration of the thickness of every one deck and size may be exaggerate, abridged or schematically show.In addition, the size of element does not fully reflect actual size.
Fig. 1 shows the plane graph according to the solar generator of embodiment, and the Fig. 1 of being shown in Figure 2 cutaway view of locating to intercept along A-A '.
Referring to Fig. 2, comprise dorsum electrode layer 200 on supporting substrate 100, the supporting substrate 100, light absorbing zone 300, resilient coating 400 on the light absorbing zone 300 and the Window layer 600 on high resistance buffer layer 500 and the high resistance buffer layer 500 on the dorsum electrode layer 200 according to the solar cell of embodiment.
Supporting substrate 100 is writing board shapes and supports dorsum electrode layer 200, light absorbing zone 300, resilient coating 400, high resistance buffer layer 500 and Window layer 600.Supporting substrate 100 can comprise insulator.Supporting substrate 100 can comprise glass substrate, plastic base or metal substrate.In more detail, supporting substrate 100 can comprise the soda-lime glass substrate.
If supporting substrate 100 comprises soda-lime glass, the Na when making solar cell in the soda-lime glass can be diffused in the light absorbing zone 300 that comprises CIGS.Therefore, the concentration of electric charges of light absorbing zone 300 can increase.Thereby can increase photoelectric conversion efficiency.
In addition, supporting substrate 100 can comprise ceramic substrate, and this ceramic substrate comprises aluminium oxide, stainless steel or has flexible polymer.Therefore, supporting substrate 100 can be transparent, and is firm or flexible.
Dorsum electrode layer 200 is arranged on the supporting substrate 100.Dorsum electrode layer 200 is conductive layers.Dorsum electrode layer 200 moves the electric charge of light absorbing zone 300 generations of solar cell, so that electric current can flow to the outside of solar cell.
Dorsum electrode layer 200 must present high conductivity or the effect of low-resistivity competence exertion.
In addition, because the light absorbing zone 300 that dorsum electrode layer 200 contacts are made of the CIGS compound, so that dorsum electrode layer 200 necessary ohmic contact light absorbing zones 300 can obtain a low contact resistance value like this.
When heat-treating formation CIGS compound in sulphur (S) or selenium (Se) atmosphere, dorsum electrode layer 200 must keep stable in the condition of high temperature.In addition, dorsum electrode layer 200 must show with supporting substrate 100 good caking property, so that dorsum electrode layer 200 and supporting substrate 100 can be owing to the difference of the thermal coefficient of expansion between dorsum electrode layer 200 and the supporting substrate 100 is peeled off.
Dorsum electrode layer 200 can comprise a kind of in molybdenum (Mo), gold (Au), aluminium (Al), chromium (Cr), tungsten (W) and the copper (Cu).Wherein, compare with other elements, Mo shows with supporting substrate 1 00 low thermal expansion coefficient difference.Therefore, show as good caking property between Mo and the supporting substrate 100, make it possible to stop and supporting substrate 100 between peel off.In addition, Mo satisfies dorsum electrode layer 200 needed features.
Dorsum electrode layer 200 can comprise two-layer at least.In this case, these layers comprise identical metal or different metals.
The first through hole TH1 forms at dorsum electrode layer 200.The first through hole TH1 exposes supporting substrate 100 top surface parts as an open area.The first through hole TH1 extends in a direction when watching in vertical view.
The width range of the supporting substrate 100 that exposes by the first through hole TH1 approximately is that 20 μ m are to 150 μ m.
Dorsum electrode layer 200 is divided into a plurality of back electrodes by the first through hole TH1.In other words, these back electrodes are limited by the first through hole TH1.
These back electrodes are configured to shape of stripes.In addition, these back electrodes can be configured to the form of matrix.Like this, the first through hole TH1 forms lattice shape when watching in vertical view.
Use laser that the first through hole TH1 is patterned.Thereby when laser beam vertical irradiation this traditional Patternized technique based on laser to the supporting substrate 100 being performed when forming the first through hole TH1, because thermal expansion and the thermal shock in laser beam irradiation zone produce burr at dorsum electrode layer 200.
Burr refers to occur in the cutter trade at the first through hole TH1 edge, because the tip at described edge is rolled thinly in dorsum electrode layer 200 patternings.
With regard to the solar energy in large area battery, the dorsum electrode layer 200 of growth can comprise the different layer of a plurality of density on the supporting substrate 100.In this case, with supporting substrate 100 contacted lower dorsum electrode layers 200 low-density may be arranged, with the caking property of raising with supporting substrate 100.With light absorbing zone 300 contacted upper dorsum electrode layers high density based on conductivity can be arranged.
When producing the layer of a plurality of different densities, the thermal coefficient of expansion with low-density lower dorsum electrode layer may have higher value, and this is owing to cause carrying out the Patternized technique thermal shock that laser beam produces when forming the first through hole TH1.
Therefore, because lower dorsum electrode layer expands more than upper dorsum electrode layer, scroll up so that form the edge of the dorsum electrode layer of the first through hole TH1.
In addition, when passing through the vertical irradiation laser beam when dorsum electrode layer 200 forms the first through hole TH1, light absorbing zone 300 may not produce equably, but has produced the shape that a plurality of particles interosculate.Therefore, cover unsuccessfully and may produce.
Therefore, current loss can occur in the interface at particle.In addition, because particle and substrate 100 isolated preset distances, so that the Reliability Enhancement of device.
Shown in Figure 3 is the enlarged drawing at B place among Fig. 2.According to embodiment, the side surface 210 of the first through hole TH1 and 220 and the predetermined angle θ of one of the normal slope of supporting substrate.
If predetermined angle theta surpasses about 80 °, the distance between the adjacent back electrode increases.Therefore, the solar power generation zone increases.If predetermined angle theta is less than 30 °, the distance between the adjacent back electrode narrows down, so that may be short-circuited between the adjacent solar cell.Therefore, it can be 10 °＜θ≤80 ° that this angle θ forms scope, and preferably, scope is in 30 °≤θ≤60 °.
The side surface 210 of the first through hole TH1 can form identical angle with 220, maybe can be formed on the different angles in the described angular range.
Dorsum electrode layer 200 can form trapezoidal shape, and like this, because the θ angle, dorsum electrode layer 200 has the etching area that differs from one another in higher and lower position.In other words, laser beam is from a plurality of direction incidents, thereby forms the first through hole TH1 in the method face tilt with respect to supporting substrate 100, and the etching area of such the first through hole TH1 upwards enlarges.
Incident forms aforesaid the first through hole TH1 because a plurality of laser beams incline towards each other, and the side surface of dorsum electrode layer 200 tilts with respect to supporting substrate 100.
In other words, because the etching area upwards increases from supporting substrate 100, the width of the first through hole TH1 upwards increases gradually.Therefore, the probability that produces burr owing to the difference of thermal coefficient of expansion between the higher and lower region of dorsum electrode layer 200 reduces, thus the Reliability Enhancement of device.
Light absorbing zone 300 can be formed on the dorsum electrode layer 200.Light absorbing zone 300 comprises the P type semiconductor compound.In more detail, light absorbing zone 300 comprises the I-III-V compounds of group.For example, light absorbing zone 300 can have crystal structure (Cu (In, the Ga) Se based on Cu-In-Ga-Se 2; CIGS), based on the crystal structure of Cu-In-Se, based on the crystal structure of Cu-Ga-Se or based on the crystal structure of Cu-Zn-Sn-Se.
Resilient coating 400 and high resistance buffer layer 500 can be formed on the light absorbing zone 300.In the solar cell that comprises the CIGS compound that consists of light absorbing zone 300, PN junction is formed on the CIGS compound film that contains P type semiconductor and between the Window layer 600 that contains N type semiconductor.
Yet, because above-mentioned bi-material shows huge difference in lattice constant and band gap, need to have the resilient coating of the middle band gap between bi-material mass-energy band gap to form good knot.
Resilient coating 400 comprises II-VI family material such as CdS or ZnS, and CdS shows higher solar cell power generation efficient.
High resistance buffer layer 500 comprises plain i-ZnO.The scope of the band gap of high resistance buffer layer 500 approximately is that 3.1eV is to 3.3eV.
Window layer 600 is formed on the high resistance buffer layer 500.Window layer 600 is transparency conducting layers.In addition, the resistance of the resistance ratio dorsum electrode layer 200 of Window layer 600 is high.
Window layer 600 comprises oxide.For example, Window layer 600 may comprise zinc oxide, tin indium oxide (ITO) or indium zinc oxide (IZO).
In addition, described oxide can comprise conductive impurity such as aluminium (Al), aluminium oxide (Al 2O 3), magnesium (Mg) or gallium (Ga).In more detail, Window layer 600 can comprise zinc oxide (AZO) or the zinc oxide of doped gallium (GZO) of adulterated al.
As mentioned above, because the first through hole TH1 has surface with respect to the normal slope of supporting substrate 100, the burr by the thermal shock generation of laser beam when the first through hole TH1 forms can be prevented from.
In addition, because the first through hole TH1 has the surface with respect to the normal slope of supporting substrate 100, be prevented from so that cover unsuccessfully, thus the Reliability Enhancement of solar cell.
Fig. 4 to 7 is the cutaway views that illustrate according to the manufacture method of the solar generator of embodiment.The detailed description of the manufacture method of solar battery apparatus provides based on the description of the solar energy equipment of having described.
Referring to Fig. 4, after supporting substrate 100 formed dorsum electrode layer 200, dorsum electrode layer 200 was patterned, thereby forms the first through hole TH1.Therefore, form a plurality of back electrodes at supporting substrate 100.Dorsum electrode layer 200 usefulness laser are patterned.
The first through hole TH1 exposes the top surface of supporting substrate 100, and the width range that can have arrives about 200 μ m at about 80 μ m.
In addition, extra play such as back-diffusion layer can be inserted between supporting substrate 100 and the dorsum electrode layer 200.In this case, the first through hole TH1 exposes the top surface of extra play.
The first through hole TH1 can have the side surface of inclination.For this reason, a plurality of laser beams are to be radiated on the supporting substrate 100 in the direction with respect to the normal slope θ angle of supporting substrate 100.
Dorsum electrode layer 200 can form trapezoidal shape, like this dorsum electrode layer 200 the higher and etching area that differs from one another is arranged than lower part.In other words, laser beam is from a plurality of direction incidents, and the normal direction with respect to supporting substrate 100 tilts simultaneously, thereby forms the first through hole TH1.Therefore, the etching area that has of the first through hole TH1 upwards enlarges.
Preferably, the first through hole TH1 focuses on from about stack of 5% to 60% by laser beam to form each other.
For example, the first through hole TH1 can form to the laser beam of about 1200nm at about 500nm by wave-length coverage.
Referring to Fig. 5, light absorbing zone 300, resilient coating 400 and high resistance buffer layer 500 are formed on the dorsum electrode layer 200.
Light absorbing zone 300 can form by sputtering technology or evaporation coating method.For example, light absorbing zone 300 can form by several different methods, for example, forms based on Cu (In, Ga) Se by while or independent evaporation Cu, In, Ga and Se 2The method of light absorbing zone 300 (CIGS), and by carrying out the method for selenizing technique after forming in metallic precursor film.
The details of the selenizing technique after forming about metallic precursor layers is described, and metallic precursor layers forms at dorsum electrode layer 200 by utilizing copper target, indium target or gallium target to carry out sputtering technology.
After this, thus metallic precursor layers forms based on Cu (In, Ga) Se through selenizing technique 2(CIGS) light absorbing zone 300.
From above-mentioned different, sputtering technology and the selenizing technique of utilizing copper target, indium target or gallium target to carry out can be carried out simultaneously.
In addition, CIS or CIG light absorbing zone 300 are by only utilizing copper and indium target or only utilizing copper and the gallium target carries out sputtering technology and selenizing technique and forms.
After this, resilient coating 400 can be by forming behind sputtering technology or CBD (chemical bath deposition) the method deposition cadmium sulfide.
Next step, the part of light absorbing zone 300, resilient coating 400 and high resistance buffer layer 500 is removed, thereby forms the second through hole TH2.
The second through hole TH2 can form by plant equipment or the laser equipment such as cutter.
For example, light absorbing zone 300 and resilient coating 400 can adopt width range to be patterned to the cutter of about 180 μ m at about 40 μ m.In addition, the second through hole TH2 can form to the laser of about 600nm at about 200nm by adopting wave-length coverage.
The width range of the second through hole TH2 arrives about 100 μ m at about 30 μ m.
In addition, the second through hole TH2's forms a part of having exposed dorsum electrode layer 200 top end surfaces.
With reference to Fig. 6, Window layer 600 is formed on the top of light absorbing zone 300 and the inside of the second through hole TH2.In other words, by above resilient coating 400, forming Window layer 600 with the second through hole TH2 inside deposition transparent conductive material.
Like this, transparent conductive material is filled into the second through hole TH2, and Window layer 600 directly contacts with dorsum electrode layer 200.
Like this, Window layer 600 is by forming at anaerobic atmosphere deposit transparent conductive material.In more detail, Window layer 600 forms by the atmosphere of inert gases deposit AZO in anaerobic.
Next step, the part of resilient coating 400, high resistance buffer layer 500 and Window layer 600 is removed to form third through-hole TH3.Therefore, Window layer 600 is patterned, thus limit a plurality of windows and a plurality of battery C1, C2 ..., and CN.The width range of each third through-hole TH3 is that about 30 μ m are to about 200 μ m.
Coupling part 700 is arranged among the second through hole TH2.Coupling part 700 extends downwardly into dorsum electrode layer 200 from Window layer 600 and contacts.For example, coupling part 700 extends to the back electrode of the second battery from the window of the first battery and contacts.
Therefore, coupling part 700 is connected with each other adjacent battery.In more detail, coupling part 700 is connected window with back electrode, these windows and back electrode be included in battery C1, C2 ..., and CN in adjacent one another are.
Coupling part 700 is integrated with Window layer 600.In other words, coupling part 700 comprises the material identical with the material that consists of Window layer 600.
Referring to Fig. 7, the part of resilient coating 400, high resistance buffer layer 500, Window layer 600 is removed to form third through-hole TH3.Therefore, Window layer 600 is patterned, thus limit a plurality of windows and a plurality of battery C1, C2 ..., and CN.
As mentioned above, according to embodiment, the burr that the laser beam thermal shock produces when the first through hole TH1 forms can be prevented from.Therefore, the Reliability Enhancement of solar cell.
Such as " embodiment ", " embodiment ", " exemplary embodiment " etc. in the specification, the meaning is to describe in conjunction with the embodiments specific characteristic, structure or a feature to comprise at least one embodiment of the present invention.Not necessarily refer to identical embodiment at different local these phrases that occur in the specification.Further, when described specific characteristic, structure or a feature in conjunction with any embodiment, this is considered to those skilled in the art can realize such characteristics, structure or feature in conjunction with other embodiment in its ken.
Although described each embodiment with reference to several illustrative embodiment, can recognize that in the disclosure disclosed the spirit and scope of principle, many other improve and embodiment can be designed by those skilled in the art.Especially, in the scope of the disclosure, accompanying drawing and appended claims, the formation of main body assembled arrangement and (or) arrange a plurality of changes and improvements can be arranged.Except part and (or) the changes and improvements that arrange, use in addition is to also being apparent among those skilled in the art.

Claims (11)

1. solar cell comprises:
Substrate;
Dorsum electrode layer is on this substrate;
Light absorbing zone is on this dorsum electrode layer;
Resilient coating is on this light absorbing zone; And
Window layer, on this resilient coating,
Wherein, described dorsum electrode layer comprises the first through hole, and has the top area trapezoidal shape different with the bottom area.
2. described solar cell according to claim 1, wherein, be formed with the first through hole dorsum electrode layer side surface with respect to this substrate normal tilt about 30 ° to about 60 ° angle.
3. described solar cell according to claim 1, wherein, described dorsum electrode layer comprises a plurality of dorsum electrode layers.
4. described solar cell according to claim 3, wherein, the grain density of the upper dorsum electrode layer in the described dorsum electrode layer is higher than the grain density of the lower dorsum electrode layer in the described dorsum electrode layer.
5. described solar cell according to claim 1, wherein, the width of each the first through hole is that about 20 μ m are to about 150 μ m.
6. described solar cell according to claim 1 further comprise the intermediate layer of a sodium contaminated (Na), and this intermediate layer is inserted between described substrate and the dorsum electrode layer.
7. the manufacture method of a solar cell, the method comprises:
Form dorsum electrode layer at substrate;
The part of this dorsum electrode layer of etching is to expose the top surface of this substrate; And
Form light absorbing zone, resilient coating and Window layer at this dorsum electrode layer,
Wherein, when the part of the described dorsum electrode layer of etching, laser beam irradiation tilts on this substrate and with respect to the top surface of substrate.
8. method according to claim 7, wherein, laser beam irradiation repeatedly so that each laser beam shines about substrate normal with being mutually symmetrical, and every bundle laser beam is about 30 ° to about 60 ° with respect to the angular range that substrate normal tilts.
9. described method according to claim 7, wherein, the first through hole is by adopting wave-length coverage to form to the laser beam irradiation of about 1200nm at about 500nm.
10. method according to claim 7, wherein, the formation of described dorsum electrode layer comprises:
Be close to described substrate and form lower dorsum electrode layer; And
Form dorsum electrode layer at lower dorsum electrode layer, the granule density under the particle concentration ratio of this upper electrode layer on the dorsum electrode layer is high.
11. described method according to claim 8, wherein, the first through hole focuses on by laser beam about stack of 5% to 60% each other and forms.
CN2011800260179A 2011-01-25 2011-10-06 Solar cell and method for manufacturing the same Pending CN102918655A (en)

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KR1020110007515A KR101189432B1 (en) 2011-01-25 2011-01-25 Solar cell apparatus and method of fabricating the same
KR10-2011-0007515 2011-01-25
PCT/KR2011/007406 WO2012102455A1 (en) 2011-01-25 2011-10-06 Solar cell and method for manufacturing the same

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CN110061075A (en) * 2019-04-26 2019-07-26 圣晖莱南京能源科技有限公司 A kind of CIGS solar battery and preparation method thereof of metal Na doping

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