CN102903809B - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- CN102903809B CN102903809B CN201110209447.6A CN201110209447A CN102903809B CN 102903809 B CN102903809 B CN 102903809B CN 201110209447 A CN201110209447 A CN 201110209447A CN 102903809 B CN102903809 B CN 102903809B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 148
- 238000003475 lamination Methods 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000004575 stone Substances 0.000 claims abstract description 51
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical group [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical group [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910016909 AlxOy Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical class [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- GHBXKGCPYWBGLB-UHFFFAOYSA-H [Al+3].[In+3].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O Chemical class [Al+3].[In+3].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GHBXKGCPYWBGLB-UHFFFAOYSA-H 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention is about a kind of light-emitting diode, and light-emitting diode comprises conduction growth substrate, semiconductor brilliant lamination, the first electrode and the second electrode of heap of stone. Conduction growth upper surface of base plate has first area and second area. Semiconductor brilliant lamination of heap of stone is positioned on the first area of conduction growth substrate. Semiconductor brilliant lamination of heap of stone comprises and is sequentially stacked over 1AShang reflecting layer, first area, has the first semiconductor layer, the active layer of the first conductive characteristic and has the second semiconductor layer of the second conductive characteristic; The first electrode is positioned on the second semiconductor layer; The second electrode is positioned on second area, by conduction growth substrate and semiconductor brilliant lamination electrically connect of heap of stone; The first electrode and the second electrode are positioned at the same side of described conduction growth substrate. Compare prior art, light-emitting diode of the present invention has promoted brightness, and has strengthened the adhesion strength of the second electrode and conduction growth substrate, prevents that the second electrode from departing from conduction growth substrate.
Description
Technical field
The present invention relates to a kind of light-emitting diode (LightEmittingDiode; LED) structure, specialRelate to a kind of structure of horizontal light-emitting diode of the Bragg reflecting layer with highly reflective.
Background technology
The light that its active layer of traditional light-emitting diode produces is down incident to GaAs basedWhen plate, because GaAs energy gap is less, incident light can be absorbed by GaAs substrate, and reducesLuminous efficiency. For fear of the extinction of substrate, there are traditionally some documents to expose lifting and send outThe technology of optical diode element brightness, for example, add Bragg reflection knot on GaAs substrateStructure (DistributedBraggReflector; DBR), be used for being reflected into directive GaAs substrateLight, and reduce GaAs substrate absorb. But this DBR catoptric arrangement is to utilize quaternaryBuilding crystal to grow material stack forms, and the refractive index difference between lamination is little, can only be effectively anti-Penetrate and approach the light that is normally incident in GaAs substrate, reflectivity is about 80%, and reflectionLight wavelength scope is very little, and effect is also little.
In addition, electrode is formed on not homonymy, easily causes electrode and substrate to stick together in encapsulation processNot good, cause electrically badly, resistance increases.
Summary of the invention
The invention provides and a kind ofly promote brightness and strengthen the second electrode and the adhesion strength of conduction growth substrateLight-emitting diode.
For reaching above-mentioned advantage, the present invention proposes a kind of light-emitting diode, described light-emitting diodesTube elements comprises conduction growth substrate, semiconductor brilliant lamination, the first electrode and the second electrode of heap of stone,Described conduction growth upper surface of base plate has first area and second area; Described semiconductor is of heap of stoneBrilliant lamination is positioned on the described first area of described conduction growth substrate; Described semiconductor is of heap of stone brilliantLamination comprises reflecting layer, has the first semiconductor layer, active layer and the tool of the first conductive characteristicThere is the second semiconductor layer of the second conductive characteristic; Described reflecting layer is positioned on described first area;Described the first semiconductor layer is positioned on described reflecting layer; Described active layer is positioned at described the first halfAbove conductor layer; Described the second semiconductor layer be positioned at described active layer above; DescribedThe first electrode is positioned on described the second semiconductor layer; Described the second electrode is positioned at described Second RegionOn territory, by described conduction growth substrate and described semiconductor brilliant lamination electrically connect of heap of stone; InstituteState the same side that the first electrode and the second electrode are positioned at described conduction growth substrate.
In one embodiment of this invention, above-mentioned light-emitting diode further comprises that one is foldedLayer reserve part, this lamination reserve part between this second area and this second electrode, this instituteThe material composition of stating this lamination reserve part comprises that at least this is partly led with this reflecting layer and/or partBody brilliant lamination of heap of stone and/or this semiconductor identical material of brilliant lamination of heap of stone.
In one embodiment of this invention, above-mentioned light-emitting diode further comprises and being positioned atRecess between above-mentioned second area and above-mentioned the second electrode, this recess is to remove oneThe above-mentioned conduction growth substrate of part forms.
In one embodiment of this invention, above-mentioned light-emitting diode further comprises and being positioned atTransparency conducting layer on the second above-mentioned semiconductor layer, this transparency conducting layer and above-mentioned firstElectrode and the second above-mentioned semiconductor layer electrically connect.
In one embodiment of this invention, above-mentioned reflecting layer is a Bragg reflecting layer.
In one embodiment of this invention, above-mentioned reflecting layer by several the 3rd semiconductor layers withThe mutual storehouse of the 4th semiconductor layer forms.
What in one embodiment of this invention, the 3rd above-mentioned semiconductor layer was more above-mentioned the 4 half leadsBody layer is easy to oxidized.
In one embodiment of this invention, the material of the 3rd above-mentioned semiconductor layer is aluminium arsenide,And/or the material of the 4th above-mentioned semiconductor layer is aluminum gallium arsenide, GaAs, AlGaInP, phosphorusA kind of or combination among change indium gallium.
In one embodiment of this invention, the aluminium content of the 3rd above-mentioned semiconductor layer and above-mentionedThe 4th semiconductor layer difference.
In one embodiment of this invention, above-mentioned semiconductor brilliant lamination of heap of stone further comprises someIndividual hole, exposes above-mentioned conduction growth substrate or the above-mentioned reflecting layer of part by hole.
In one embodiment of this invention, above-mentioned light-emitting diode further comprises adjacencyThe alumina layer of above-mentioned second area and above-mentioned the 3rd semiconductor layer.
In one embodiment of this invention, above-mentioned light-emitting diode further comprises around upperThe 3rd semiconductor layer alumina layer of stating encloses.
In one embodiment of this invention, above-mentioned light-emitting diode further comprise aroundThe alumina layer of above-mentioned hole.
In one embodiment of this invention, above-mentioned alumina layer is with a wet oxygen processing procedure oxidation sectionDivide the 3rd above-mentioned semiconductor layer to form.
The invention has the beneficial effects as follows, light-emitting diode of the present invention has improved reflectivity, therebyPromote the brightness of light-emitting diode; In addition, light-emitting diode of the present invention has strengthenedThe adhesion strength of two electrodes and conduction growth substrate, prevent that the second electrode from departing from conduction growth substrate.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand the present inventionTechnological means, and can be implemented according to the content of description, and for allow of the present invention onState with other objects, features and advantages and can become apparent, below especially exemplified by embodiment, and coordinateAccompanying drawing, is described in detail as follows.
Brief description of the drawings
Figure 1A is the schematic top plan view of the first embodiment of light-emitting diode of the present invention.
Figure 1B is that signal is analysed and observe in the side of the first embodiment of light-emitting diode of the present inventionFigure.
Fig. 1 C is semiconductor brilliant the folding of heap of stone of the first embodiment of light-emitting diode of the present inventionThe side cross-sectional schematic of layer.
Fig. 1 D is that the lamination that has of the first embodiment of light-emitting diode of the present invention retainsThe side cross-sectional schematic of portion.
The first embodiment that Fig. 2 A, 2B, 2C are respectively light-emitting diode of the present invention is notThe second electrode side cross-sectional schematic of similar shape.
Fig. 3 is that signal is analysed and observe in the side of the second embodiment of light-emitting diode of the present inventionFigure.
Fig. 4 is that signal is analysed and observe in the side of the 3rd embodiment of light-emitting diode of the present inventionFigure.
Fig. 5 A is that light-emitting diode of the present invention has the 3rd semiconductor layer and the 4 half and leadsThe side cross-sectional schematic of the mutual storehouse composition of body layer.
Fig. 5 B is the generalized section of light-emitting diode of the present invention after wet oxygen processing procedure.
Fig. 6 A be fourth embodiment of the invention light-emitting diode structure overlook signalFigure.
Fig. 6 B is that the light-emitting diode structure of fourth embodiment of the invention is along W-W 'The generalized section of dotted line.
Bowing of the light-emitting diode structure that Fig. 7 A and Fig. 7 B are fifth embodiment of the inventionDepending on schematic diagram.
Fig. 8 is that the light-emitting diode structure of sixth embodiment of the invention has oxidableHigh aluminium content semiconductor layer is analysed and observe signal with the side that is not easy oxide-semiconductor layer stack compositionFigure.
Detailed description of the invention
For further setting forth the present invention for the technological means reaching predetermined goal of the invention and take andEffect, below in conjunction with accompanying drawing and preferred embodiment, to the light emitting diode unit proposing according to the present inventionDetailed description of the invention, structure, feature and effect of part, be described in detail as follows.
The invention provides the horizontal light-emitting diode structure of a kind of electrode at homonymy. Figure 1AWith Figure 1B be respectively one first electrode of first embodiment of the invention and the second electrode withThe structure schematic top plan view of the light-emitting diode of side and cuing open along the side of V-V ' dotted lineDepending on schematic diagram. Light emitting diode construction 100 comprises semiconductor brilliant lamination 101 of heap of stone and conducts electricity intoLong substrate 102. This conduction growth substrate 102 has upper surface 103 and definition has the firstth districtTerritory 1A and second area 1B. It is upper that semiconductor brilliant lamination 101 of heap of stone is positioned at first area 1A,Comprise be sequentially stacked over 1AShang reflecting layer, first area 104, N-shaped semiconductor layer (example:N-cladding layer) 106, active layer (activelayer) 108 and p-type semiconductor layer (example:P-cladding layer) 110, transparency conducting layer 112 is positioned at described p-type semiconductor layer 110On. The first electrode 114 is positioned on transparency conducting layer 112. Lamination reserve part 116 is positioned at leadsOn the second area 1B of electricity growth substrate 102. The second electrode 118 is formed at conduction and grows upOn the second area 1B of substrate 102 and coated lamination reserve part 116.
Fig. 1 C is the semiconductor of first embodiment of the invention brilliant laminated construction schematic diagram of heap of stone. ThisInvent disclosed light-emitting diode structure processing procedure mode, a conduction growth base is first providedPlate 102, in first embodiment of the invention, conduction growth substrate 102 has electric conductivity,In order to grow up or to carry semiconductor brilliant lamination 101 of heap of stone thereon. Form this conduction growth baseThe material of plate 101 including but not limited to germanium (Ge), GaAs (GaAs), indium phosphide (InP),Gallium phosphide (GaP), carborundum (SiC), silicon (Si), gallium nitride (GaN) a kind of or itsCombination. This conduction growth substrate 102 has upper surface 103 and definition has first area 1AAnd second area 1B.
Then, on conduction growth upper surface of base plate 103, form reflecting layer 104, this reflectionLayer 104 be a kind of Bragg reflecting layer, by several easily oxidation semiconductor layers and do not allowThe mutual storehouse of oxidizable semiconductor layer forms. For example aluminium arsenide (AlAs) and aluminum gallium arsenideThe mutual storehouse of mutual storehouse (AlGaAs), aluminium arsenide (AlAs) and GaAs (GaAs),Mutual storehouse or the aluminium arsenide (AlAs) of aluminium arsenide (AlAs) and AlGaInP (AlGaInP)Form with the mutual storehouse of InGaP (InGaP), wherein aluminium arsenide is half of easily oxidationConductor layer, the semiconductor layer for being not easy to be oxidized that other and aluminium arsenide mate.
Then on reflecting layer 104, form N-shaped semiconductor layer 106, N-shaped semiconductorThe material of layer 106 includes but not limited to AlGaInP, GaAs or InGaP. PhosphorusIt consists of (Al to change gallium aluminium indiumxGa1-x)yInyP, wherein x and y value only need to meet 0 < x < 1,Y < 1, for example (AlxGa1-x)0.5In0.5P。
On N-shaped semiconductor layer 106, form active layer 108, the material of active layer 108Material includes but not limited to AlGaInP, and it consists of (AlxGa1-x)0.5In0.5P, wherein 0.5Only for illustrating. Taking light-emitting diode as example, can be by changing 108 li of active layersWherein one or more layers physics and chemical composition, adjusts the optical wavelength of sending. Conventional materialMaterial for AlGaInP series, aluminum phosphate indium series, aluminum indium gallium nitride (AlGaInN) series,Zinc oxide (ZnO) series. Active layer 108 can be single heterojunction structure (singleHeterostructure, SH), double-heterostructure (doubleheterostructure, DH), twoSide double heterojunction (double-sidedoubleheterostructure, DDH), multi-layer quantum wellStructure (multi-quantumwell, MWQ). Taking multi-layer quantum well construction as example, it hasMultiple barrier layers and quantum well layer replace storehouse, and wherein barrier layer is (AlyGa1–y)0.5In0.5P，0.5≤y≤0.8; Quantum well layer is In0.5Ga0.5P。
At the upper formation p-type semiconductor layer 110 of this active layer 108, for example, it is p-type phosphatizationGallium (GaP), its material includes but not limited to AlGaInP (lnGaAlP), it consists of(AlxGa1-x)0.5In0.5P, wherein 0.5 only for illustrating, (AlxGa1-x)yInyP, wherein x and yValue only needs 0 < x < 1, y < 1. Wherein N-shaped semiconductor layer 106 thickness are about 3 μ m, pType semiconductor layer 110 thickness are about 10 μ m, and the thickness of active layer 1108 is about 0.3～1.5 μ m.
Utilize electron beam evaporation plating or sputter to form transparency conducting layer 112 and cover p-type semiconductor layer110, wherein the material of transparency conducting layer 112 can be metal oxide, for example indium tin oxidationThing (ITO), cadmium tin-oxide (CTO), antimony oxidation tin, indium zinc oxide (IZO), oxygenChange appointing in zinc-aluminium (AZO), gallium oxide zinc (GZO), zinc oxide (ZnO) and zinc tin oxideA kind of. Transparency conducting layer 112 thickness are about 0.005 μ m～0.6 μ m.
Please refer to Fig. 1 D, the brilliant lamination of heap of stone of the semiconductor on second area 1B is carried out to patterningEtching, forms exposed division 120 and lamination reserve part 116, and exposed division 120 is partly led for etchingAfter body brilliant lamination of heap of stone, expose conduction growth substrate 102 and form, wherein lamination reserve part 116The part semiconductor brilliant lamination of heap of stone retaining during by etching semiconductor brilliant lamination of heap of stone is formed. FoldedThe composition of layer reserve part 116 can comprise and identical group of semiconductor brilliant lamination 101 of heap of stoneBecome material, for example have simultaneously reflecting layer 104, N-shaped semiconductor layer 106, active layer 108,P-type semiconductor layer 110 or transparency conducting layer 112. The composition of lamination reserve part 116 also canOnly comprise the composition material identical with semiconductor brilliant lamination 101 parts of heap of stone, for example: have anti-Penetrate layer 104, or there are wherein several layers of semiconductor brilliant lamination 101 of heap of stone, or there is reflecting layer104 and the two-layer epitaxial structure of N-shaped semiconductor layer 106, or there is reflecting layer 104, N-shapedThree layers of epitaxial structure of semiconductor layer 106 and active layer 108, or there is reflecting layer 104, nFour layers of epitaxial structure of type semiconductor layer 106, active layer 108 and p-type semiconductor layer 110.
Please refer to Fig. 2 A, the first electrode 114 is formed on transparency conducting layer 112, the second electricityIt is upper that the utmost point 118 is formed at second area 1B, completely coated lamination reserve part 116 covering partThe exposed division 120 dividing. The second electrode 118 directly contacts with exposed division 120, by with leadThe direct contact of electricity growth substrate 102, by electrically-conductive backing plate 102 and semiconductor brilliant lamination of heap of stone101 electrically connects; Complete this light-emitting diode structure 100. The second electrode 118 also canCover lamination reserve part 116 and partly cover exposed division 120 with part, as Fig. 2 B and figureShown in 2C. The function of lamination reserve part 116 is for strengthening the second electrode 118 and conduction growth baseThe adhesion strength of plate 102, avoids the second electrode 118 because of sticky not firm peeling off.
Fig. 3 is that the side-looking of the light-emitting diode structure 1001 of second embodiment of the invention is shownIntention. Half of the structure of semiconductor brilliant lamination 1011 of heap of stone and fabrication steps and the first embodimentConductor brilliant lamination 101 of heap of stone is identical, and the semiconductor that its difference is on second area 11B is builtBrilliant lamination 1011, after pattern etched, forms an exposed division 1201 and a lamination reserve part1161, after wherein exposed division 1201 is etching semiconductor brilliant lamination 1011 of heap of stone, expose anti-Penetrating 1041, layer forms. Lamination reserve part 1161 is etching semiconductor brilliant laminations 1011 of heap of stoneTime the part semiconductor that retains brilliant lamination 1011 of heap of stone form. Lamination reserve part 1161 itsComposition can only have N-shaped semiconductor layer 1061; Or the semiconductor wherein with several layers is of heap of stone brilliantLamination 1011, two layers for example with N-shaped semiconductor layer 1061 and active layer 1081 are of heap of stone brilliantStructure, or there is N-shaped semiconductor layer 1061, active layer 1081 and p-type semiconductor layer 1101Three layers of epitaxial structure, or there is N-shaped semiconductor layer 1061, active layer 1081, p-type halfThe four-layer structure of conductor layer 1101 and transparency conducting layer 1121.
Finally, the first electrode 1141 is formed on transparency conducting layer 1121, the second electrode 1181Be formed on second area 11B upper, completely coated lamination reserve part 1161 cover partExposed division 1201. The second electrode 1181 directly contacts with exposed division 1201, passes through reflecting layer1041 and conduction growth substrate 1021 and semiconductor brilliant lamination 1011 electrically connects of heap of stone; CompleteThis light-emitting diode structure 1001. The second electrode 1181 also can partly cover laminationReserve part 1161 part cover exposed division 1201. The function of this lamination reserve part 1161 isStrengthen the adhesion strength of the two the second electrodes 1181 and conduction growth substrate 1021, avoid secondElectrode 1181 is because of sticky not firm peeling off.
Fig. 4 is that the side-looking of the light-emitting diode structure 1002 of third embodiment of the invention is shownIntention. The structure of semiconductor brilliant lamination 1012 of heap of stone and fabrication steps thereof and the first embodiment andThe semiconductor brilliant lamination 101,1011 of heap of stone of two embodiment is identical, and its difference is in Second RegionSemiconductor brilliant lamination 1012 of heap of stone on the 111B of territory, after pattern etched, forms an exposed division1202 and a lamination reserve part 1162, wherein exposed division 1202 is that etching semiconductor is of heap of stone brilliant foldedAfter layer 1012, expose N-shaped semiconductor layer 1062 and form, lamination reserve part 1162 is erosionsPart semiconductor 1012 shapes of brilliant lamination of heap of stone that retain while carving semiconductor brilliant lamination 1012 of heap of stoneBecome. Lamination reserve part 1162 its compositions can be only N-shaped semiconductor layer 1062; Or haveThe wherein semiconductor of several layers brilliant lamination 1012 of heap of stone, for example N-shaped semiconductor layer 1062 and activityTwo layers of epitaxial structure of layer 1082, or N-shaped semiconductor layer 1062, active layer 1082 and pThree layers of epitaxial structure of type semiconductor layer 1102, or N-shaped semiconductor layer 1062, active layer1082, the four-layer structure of p-type semiconductor layer 1102 and transparency conducting layer 1122.
Finally, the first electrode 1142 is formed on transparency conducting layer 1122, the second electrode 1182Be formed at second area 111B upper, completely coated lamination reserve part 1162 cover partExposed division 1202. The second electrode 1182 directly contacts with the part exposed division 1202 covering,By N-shaped semiconductor layer 1062, reflecting layer 1042 and conduction growth substrate 1022 and halfConductor is built brilliant lamination 1012 electrically connects; Complete this light-emitting diode structure 1002.The second electrode 1182 also can partly cover lamination reserve part 1162 and part covers exposed division1202. The function of lamination reserve part 1162 is to strengthen the second electrode 1182 and conduction growth baseThe adhesion strength of plate 1022, avoids the second electrode 1182 because of sticky not firm peeling off.
As shown in Figure 5A, in above-mentioned the first embodiment, reflecting layer 104 can be Bragg reflectionLayer, by several to the 3rd semiconductor layer 104c and the mutual storehouse of the 4th semiconductor layer 104b institute groupBecome. In figure with three couples of the 3rd semiconductor layer 104c and the mutual storehouse of the 4th semiconductor layer 104bExplain, this logarithm is without any restrictions. The 3rd semiconductor layer 104c can be aluminium arsenide(AlAs). The 4th semiconductor layer 104b can be aluminum gallium arsenide, GaAs, AlGaInP,Or InGaP forms. As shown in Figure 5 B, due to the characteristic of the 3rd semiconductor layer 104cCompared with the 4th semiconductor layer 104b be easy to oxidation, therefore process stage by aqueous vapor pass into this luminous twoUtmost point tube elements, at approximately 300 DEG C～800 DEG C of high temperature, the 3rd semiconductor layer 104c can be by extroversionInside start oxidation, form aluminium oxide (AlmOn) layer 104a, wherein m and n are integer. InBetween part be still unoxidized the 3rd semiconductor layer 104c. The oxygen of the 3rd semiconductor layer 104cChange speed along with temperature is more high faster, also along with aluminium content is more high faster. Through snperoxiaized systemJourney, in the present embodiment, the refraction coefficient of aluminium oxide is 1.6, and the 4th semiconductor layer 104b,As the aluminum gallium arsenide layer of low-aluminum-content or AlGaInP layer, its refraction coefficient is greater than 3, twoPerson's refraction coefficient difference is very large, thereby the reflecting layer 104 forming can make wave-length coverageReflectivity between 580-630 nanometer almost reaches and approaches 100%, can effectively reflect workThe light that property layer 108 sends. Although in the present embodiment, reflecting layer 104 is to be positioned at conductionBetween growth substrate 102 and N-shaped semiconductor layer 106, but not in order to limit the present invention.The Bragg reflecting layer of the present embodiment also can be positioned in N-shaped semiconductor layer 106, to reachTo the effect that the present invention wanted to reach.
Please refer to Fig. 6 A and Fig. 6 B, its illustrate is fourth embodiment of the invention light-emitting diodesThe schematic top plan view of tube elements structure 200 and along the generalized section of W-W ' dotted line.The light-emitting diode structure 200 of the present embodiment comprises a conduction growth substrate 202. ShouldConduction growth substrate 202 has a upper surface 203, and these upper surface 203 definition have the firstth districtTerritory 2A and a second area 2B. 201 of semiconductor brilliant laminations of heap of stone are conducting electricity growth substrateAbove 202 first area 2A. This semiconductor brilliant lamination 201 of heap of stone comprises sequentially and is stacked over and leadsReflecting layer 204, N-shaped semiconductor layer 206, the active layer (active of electricity growth substrate 202Layer) 208 and p-type semiconductor layer 210. One transparency conducting layer 212 is positioned at p-type partly leadsOn body layer 210. One first electrode 214 is formed on transparency conducting layer 212. One lamination is protectedStay portion 216 be formed on conduction growth substrate 202 second area 2B above. The second electrode218 are formed on conduction growth substrate 202 and cover lamination reserve part 216. Reflecting layer 204Can be Bragg reflecting layer, comprise the 3rd semiconductor layer 204c and the 4th semiconductor layer 204bMutual storehouse. The present embodiment is with three couples of the 3rd semiconductor layer 204c and the 4th semiconductor layer 204bThe reflecting layer 204 forming explains. In order to shorten the time of oxidation, the present embodiment byThe upper surface of light-emitting diode structure 200 is etched to conduction growth substrate 202, formsSeveral holes 240, make reflecting layer 204 to increase the 3 half by hole 240 and leadThe area of body layer 204c oxidation. Therefore via the impact of etching hole, the 3rd semiconductor layer204c starts oxidation from outside to inside except meeting all around, some holes 204 can be by interior andOuter oxidation, the formation aluminium oxide (Al of startingxOy) layer 204a. Finally, the first electrode 224 formsOn transparency conducting layer 212, and the second electrode 218 is formed on conduction growth substrate 202And on coated lamination reserve part 216, complete this light-emitting diode structure 200. This enforcementIn example, in light-emitting diode structure, there are several holes 240, although sacrificial sectionThe area of active layer 208, but the area in increase high reflectance reflecting layer is higher to reachReflectivity. And due to can to contain that Bragg reflecting layer that alumina layer formed can promoteSee the reflectivity of optical wavelength 580-630 nanometer, therefore can increase the luminous of light-emitting diodeEfficiency. In addition, the hole 240 in the present embodiment also can be by light-emitting diode structure 200Upper surface etching, but be not etched to conduction growth substrate 202, the reflection of an exposed portions serveLayer 204 sidewall (not shown). The semiconductor brilliant lamination of heap of stone of the first embodiment to the three embodiment101,1011,1012 also can form several holes, make reflecting layer 104,1041,1042Except being all around oxidized, can be oxidized by hole simultaneously.
Please refer to Fig. 7 A, the light-emitting diode knot that the fifth embodiment of the present invention disclosesStructure 300 comprises a conduction growth substrate 302. This conduction growth substrate 302 has table onFace 303, these upper surface 303 definition have a first area 3A and a second area 3B.Semiconductor brilliant lamination 301 of heap of stone is positioned on the first area 3A of conduction growth substrate 302,This semiconductor brilliant lamination 301 of heap of stone comprise storehouse sequentially conduction growth substrate 302 above insteadPenetrate layer 304, N-shaped semiconductor layer 306, active layer (activelayer) 308, p-type semiconductorLayer 310. One transparency conducting layer 312 is positioned on p-type semiconductor layer 310. One first electrode314 are formed on transparency conducting layer 312. One recess 326 is formed at conduction growth substrate 302Second area 3B on. The second electrode 318 is formed on conduction growth substrate 302 and coversLid recess 326. The composition of semiconductor brilliant lamination 301 of heap of stone and manufacturing step thereof are as embodiment mono-And described in embodiment tetra-. When completing after the making of semiconductor brilliant lamination 301 of heap of stone, be etched in theSemiconductor brilliant lamination 301 of heap of stone on two region 3B is to exposing conduction growth substrate 302. ConnectThe conduction growth substrate second area 3B that pattern etched exposes, form a recess 326,Then form the second electrode 318 on second area B, and cover recess 326 and covering partThe exposed division 320 dividing. The second electrode 318 directly contacts with conduction growth substrate 302, logicalCross conduction conduction growth substrate 302 and semiconductor brilliant lamination 301 electrically connects of heap of stone. The second electricityThe utmost point 318 also can partly cover recess 326 and part covers exposed division 320, as Fig. 7 B instituteShow. The function of recess 326 is strengthen the second electrode 318 and conduction growth substrate 302 stickyPut forth effort, avoid the second electrode 318 because of sticky not firm peeling off.
Please refer to Fig. 8, the light-emitting diode knot that the sixth embodiment of the present invention disclosesStructure 400 comprises a conduction growth substrate 402. This conduction growth substrate 402 has table onFace 403, these upper surface 403 definition have first area 4A and second area 4B. Half is ledIt is upper that body brilliant lamination 401 of heap of stone is formed at first area 4A, and this semiconductor brilliant lamination 401 of heap of stone wrapsDraw together the reflecting layer 404 that is sequentially stacked on conduction growth substrate 402, N-shaped semiconductor layer 406,Active layer (activelayer) 408, p-type semiconductor layer 410. One transparency conducting layer 412 is positioned atOn p-type semiconductor layer 410. One first electrode 414 is formed on transparency conducting layer 412.One recess 426 is formed on the second area 4B of conduction growth substrate 402, the second electrode418 are formed on conduction growth substrate 402 and cover recess 426. Semiconductor is built brilliant lamination401 composition and manufacturing step thereof are as described in the first embodiment to the five embodiment. When completingAfter the making of semiconductor brilliant lamination 401 of heap of stone, the semiconductor being etched on second area 4B is builtBrilliant lamination 401 is to exposing conduction growth substrate 402. Then pattern etched exposesConduction growth substrate second area 4B, forms a recess 426, then forms the second electrode 418Go up in second area B, and cover the exposed division 420 of recess 426 and cover part, N-shapedElectrode 418 directly contacts with conduction growth substrate 402, by conduction growth substrate 402 HesSemiconductor is built brilliant lamination 401 electrically connects. The second electrode 418 also can partly cover recess426 also partly cover exposed division 420. The function of recess 426 is for strengthening the second electrode 418With the adhesion strength of conduction growth substrate 402, avoid the second electrode 418 because of sticky not firm peeling off.
The reflecting layer 404 of the present embodiment has the 3rd semiconductor layer 404c and the 4th semiconductor layer 404c hands overStorehouse mutually. In order to shorten the time of oxidation, by the upper surface etching of light-emitting diode structure 400To conducting electricity growth substrate 402, form several holes 440, make reflecting layer 404 can pass through hole440 with interior and be oxidized outward and form aluminium oxide (AlxOy) layer 404a. The first electrode 424 is formed on transparentOn conductive layer 412, and the second electrode 418 is formed on conduction growth substrate 402 coated recess 426Upper, complete this light-emitting diode structure 400. Tool in light-emitting diode structure in the present embodimentThere are several holes 440, although the area of the active layer 408 of sacrificial section increases high reflectance anti-Penetrate the area of layer. Hole 440 in embodiment also can be by the upper surface of light-emitting diode structure 400Etching, but be not etched to conduction growth substrate 402, only need expose reflecting layer 404, logical snperoxiaized effect,Form aluminium oxide (AlxOy) layer.
The above, be only embodiments of the invention, not the present invention done any formalRestriction, although the present invention disclose as above with embodiment, but not in order to limit the present invention,Any those skilled in the art, are not departing within the scope of technical solution of the present invention, when can profitMake a little change or be modified to the equivalent embodiment of equivalent variations with the technology contents of above-mentioned announcement,In every case be not depart from technical solution of the present invention content, foundation technical spirit of the present invention is to above enforcementExample any simple modification, equivalent variations and the modification done, all still belong to technical solution of the present inventionIn scope.
Claims (10)
1. a light-emitting diode, is characterized in that: described light-emitting diode bagDraw together conduction growth substrate, semiconductor brilliant lamination, the first electrode and the second electrode of heap of stone, described in leadElectricity growth upper surface of base plate has first area and second area; Described semiconductor is built brilliant laminationBe positioned on the described first area of described conduction growth substrate; Described semiconductor is built brilliant lamination bagDraw together reflecting layer, there is the first semiconductor layer, the active layer of the first conductive characteristic and have secondThe second semiconductor layer of conductive characteristic; Described reflecting layer is positioned on described first area; DescribedThe first semiconductor layer is positioned on described reflecting layer; Described active layer is positioned at described the first semiconductorAbove layer; Described the second semiconductor layer be positioned at described active layer above; Described firstElectrode is positioned on described the second semiconductor layer; Described the second electrode is positioned on described second area,By described conduction growth substrate and described semiconductor brilliant lamination electrically connect of heap of stone; Described firstElectrode and the second electrode are positioned at the same side of described conduction growth substrate, described light emitting diodeElement further comprises that one is positioned at lamination reserve part or the recess on described second area, and instituteState the second electrode and cover wholly or in part described lamination reserve part or described recess,
Wherein, described the second electrode directly contacts with described conduction growth substrate.
2. light-emitting diode as claimed in claim 1, is characterized in that: described foldedThe material composition of layer reserve part comprises at least and described reflecting layer and/or the described semiconductor of partBrilliant lamination of heap of stone and/or the described semiconductor identical material of brilliant lamination of heap of stone.
3. light-emitting diode as claimed in claim 1, is characterized in that: described recessedPortion removes a part of described conduction growth substrate to form.
4. light-emitting diode as claimed in claim 1, is characterized in that: described anti-Penetrating serve as reasons several the 3rd semiconductor layers and the mutual storehouse of the 4th semiconductor layer of layer forms.
5. light-emitting diode as claimed in claim 4, is characterized in that: describedMore described the 4th semiconductor layer of three semiconductor layers is easy to oxidized.
6. light-emitting diode as claimed in claim 4, is characterized in that: describedThe aluminium content of three semiconductor layers is different from described the 4th semiconductor layer.
7. light-emitting diode as claimed in claim 1, is characterized in that: described halfConductor brilliant lamination of heap of stone further comprises several holes, exposes described conduction by described holeThe described reflecting layer of growth substrate or part.
8. light-emitting diode as claimed in claim 4, is characterized in that: describedOptical diode element further comprises the described second area of adjacency and described the 3rd semiconductor layerAlumina layer.
9. light-emitting diode as claimed in claim 4, is characterized in that: describedOptical diode element further comprises around the alumina layer of described the 3rd semiconductor layer.
10. light-emitting diode as claimed in claim 7, is characterized in that: describedOptical diode element further comprises the alumina layer around described these holes.
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| CN201110209447.6A CN102903809B (en) | 2011-07-25 | 2011-07-25 | Light-emitting diode |
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| TWI631729B (en) * | 2015-06-17 | 2018-08-01 | 晶元光電股份有限公司 | Semiconductor light-emitting device |
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| CN1355569A (en) * | 2000-11-27 | 2002-06-26 | 国联光电科技股份有限公司 | Structure of LED and its preparing process |
| TW580785B (en) * | 2003-01-23 | 2004-03-21 | Nat Univ Chung Hsing | Vertical-cavity surface emitting laser (VCSEL) and a method for producing the same |
| JP3981797B2 (en) * | 2000-04-05 | 2007-09-26 | サンケン電気株式会社 | Semiconductor light emitting device |
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| CN201126826Y (en) * | 2007-09-05 | 2008-10-01 | 昌鑫光电（东莞）有限公司 | Light emitting diode capable of bidirectional luminescence and heat radiation |
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| JP3981797B2 (en) * | 2000-04-05 | 2007-09-26 | サンケン電気株式会社 | Semiconductor light emitting device |
| CN1355569A (en) * | 2000-11-27 | 2002-06-26 | 国联光电科技股份有限公司 | Structure of LED and its preparing process |
| TW580785B (en) * | 2003-01-23 | 2004-03-21 | Nat Univ Chung Hsing | Vertical-cavity surface emitting laser (VCSEL) and a method for producing the same |
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