CN102903799A - TCO (transparent conducting oxide) conducting DBR (distributed Bragg reflector) vertical blue-light LED (light-emitting diode) chip and manufacturing method thereof - Google Patents
TCO (transparent conducting oxide) conducting DBR (distributed Bragg reflector) vertical blue-light LED (light-emitting diode) chip and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a TCO (transparent conducting oxide) conducting DBR (distributed Bragg reflector) vertical blue-light LED (light-emitting diode) chip and a manufacturing method thereof. The method comprises the following steps: form a light-emitting epitaxial layer on a sapphire substrate; coating a TCO conducting DBR layer, which is composed of a first-type N-type TCO film and a second-type N-type TCO film and/or nth-type N-type TCO film alternately, on the upper surface of the light-emitting epitaxial layer by vaporization, thereby forming ohmic contact with the upper surface of the light-emitting epitaxial layer; bonding the conducting substrate onto the TCO conducting DBR layer to form a P electrode by a wafer bonding technique; peeling the sapphire substrate by a laser peeling technique; and finally, preparing an N electrode on the lower surface of the light-emitting epitaxial layer. The vertical blue-light LED solves the problems of difficulty in forming ohmic contact with P-GaN, weak reflector adhesiveness, lower reflection factor of the reflector at high temperature, overhigh preparation temperature of the conducting DBR, overhigh voltage of the blue-light LED chip using the conducting DBR as the P electrode, and the like in the vertical LED chip electrode material in the prior art.
Description
Technical field
The present invention relates to a kind of blue-light LED chip and preparation method thereof, particularly relate to rectilinear blue-light LED chip of a kind of TCO type conduction DBR and preparation method thereof.
Background technology
At present, common blue-light LED chip is divided into two kinds, be the blue-light LED chip of transversary (Lateral) and the blue-light LED chip of vertical stratification (Vertical), wherein, its P of the blue-ray LED of described transversary, the N electrode is in the same side, P, N electrode homonymy certainly will etch away the part quantum well and prepare the N district, thereby wasted sizable a part of light-emitting area, and P, it is inhomogeneous that N electrode homonymy has CURRENT DISTRIBUTION, the shortcomings such as poor radiation, and CURRENT DISTRIBUTION is inhomogeneous and then have influence on voltage and the brightness of chip, thermal diffusivity missionary society causes junction temperature to raise, degradation problem under the internal quantum efficiency has influence on the light efficiency of chip.
And its P of the blue-light LED chip of vertical stratification, N distribution of electrodes are in the both sides of quantum well, therefore do not need the etching quantum well, greatly improved the utilance of chip light emitting area, electric current evenly distributes perpendicular to chip, and each layer all can be selected the good material of thermal conductivity as far as possible in the rectilinear led chip structure, therefore the heat dispersion of rectilinear led chip is good, has greatly eliminated the junction temperature rising that heat accumulation brings, and internal quantum efficiency descends.Just because of these unique advantages, rectilinear led chip becomes the focus of LED research.
In the manufacturing process of at present common rectilinear blue-light LED chip, generally be directly to plate reflective metal Ag or Al on the surface of blue light emitting epitaxial loayer well known to those skilled in the art, but this kind way but has following shortcoming: 1, Ag and Al are difficult to P-GaN formation ohmic contact very high to the voltage that makes led chip; 2, the reflectivity of Ag and Al can sharply reduce along with the rising of temperature, when the led chip internal heat is gathered the temperature rising, because the decline of metallic reflection specular reflectivity causes the chip external quantum efficiency to reduce, thereby brightness and the luminous efficiency of led chip have been reduced; 3, the adhesiveness of Ag, Al and GaN is very poor, be easy to come off, and Ag at high temperature easily reunites.
Another kind of way is also arranged in the manufacturing process of rectilinear blue-light LED chip, after namely plating transparency conducting layer (TCO), on transparency conducting layer, plate again high-reflectivity metal Ag or Al, but, this kind way still has following shortcoming: 1, the reflectivity owing to Ag and Al can sharply reduce along with the rising of temperature, when the led chip internal heat is gathered the temperature rising, because the decline of metallic reflection specular reflectivity, cause the chip external quantum efficiency to reduce, thereby reduced brightness and the luminous efficiency of led chip;
2, the adhesiveness of Ag and Al and TCO film is very poor, easily come off, and Ag at high temperature can reunite.
For this reason, for the ohmic contact that how to solve rectilinear led chip P-GaN, the problem that reflectance of reflector descends under the bad and high temperature of speculum adhesiveness, current also have some scholars with reference to using metallo-organic compound CVD (Chemical Vapor Deposition) method (MOCVD in red-light LED and the yellow light LED, Metal-organic Chemical Vapor Deposition) experience of growth conduction DBR, MOCVD growth conduction DBR is used in trial on the surface of blue light emitting epitaxial loayer, because use MOCVD to be grown in indigo plant, growth temperature when having the conduction DBR that high permeability high conductivity film consists of in the green light band exceeds much than the growth temperature of the base in the quantum well and trap, directly cause quantum well performance degradation and chip wavelength very huge drift to occur, and the surface of blue light emitting epitaxial loayer is that the P type mixes, for and P-GaN between form good ohmic contact, generally select MOCVD at blue light emitting epitaxial loayer upper surface growing P-type conduction DBR, but the difficulty that III-V compound semiconductor ubiquity P type mixes, and the carrier concentration of P type III-V compound semiconductor is not high, thereby cause resistivity excessive, there is the problem of overtension in the rectilinear blue-light LED chip made from this P-type conduction DBR.
Therefore, how to reduce the preparation temperature of conduction DBR and reduce to use conduction DBR as the voltage of the blue-light LED chip of P electrode, and then prepare low-voltage, the rectilinear blue-light LED chip of high axially output has become practitioner's problem demanding prompt solution of this area.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide rectilinear blue-light LED chip of a kind of TCO type conduction DBR and preparation method thereof, with the reflectivity of speculum a little less than solving that above-mentioned rectilinear led chip of the prior art is difficult and forming ohmic contact, speculum adhesiveness with P-GaN, under the high temperature descend, the preparation temperature of conduction DBR is too high and use conduction DBR as the problems such as blue-light LED chip overtension of P electrode.
Reach for achieving the above object other relevant purposes, the invention provides the manufacture method of the rectilinear blue-light LED chip of a kind of TCO type conduction DBR, it is characterized in that, described manufacture method may further comprise the steps at least: 1) Sapphire Substrate is provided, and forms luminous epitaxial loayer in the upper surface of described Sapphire Substrate; 2) in the upper surface evaporation one TCO type conductivity DBR layer of described luminous epitaxial loayer, described TCO type conductivity DBR layer is superimposed by the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film and forms, and the upper surface of described the first N-type TCO film and described luminous epitaxial loayer forms ohmic contact; 3) provide a conductivity substrate, adopt wafer bond techniques described conductivity substrate to be bonded to the upper surface of described TCO type conductivity DBR layer to form the P electrode; 4) utilize laser lift-off technique to peel off described Sapphire Substrate, so that described Sapphire Substrate is peeled off from the lower surface of described luminous epitaxial loayer; And 5) prepare the N electrode in the lower surface of described luminous epitaxial loayer.
In manufacture method of the present invention, described the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film are that homotype is mixed.Described the first N-type TCO film is the ITO material, and described the second N-type TCO film is the AZO material, and described n kind N-type TCO film is the GZO material.
Step 3 in manufacture method of the present invention) in, be the upper surface that described conductivity substrate is bonded to described TCO type conductivity DBR layer by a bonded layer; Described bonded layer is metal material, alloy material, non-metallic conducting material or organic conductive material, and described bonded layer is single layer structure or sandwich construction.
In manufacture method of the present invention, described conductivity substrate is metal material, alloy material or non-metallic conducting material, and described conductivity substrate is single layer structure or sandwich construction.
The present invention also provides the rectilinear blue-light LED chip of a kind of TCO type conduction DBR, it is characterized in that, comprising: luminous epitaxial loayer; TCO type conductivity DBR layer, be stacked and placed on the upper surface of described luminous epitaxial loayer, being superimposed by the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film forms, and the upper surface of described the first N-type TCO film and described luminous epitaxial loayer forms ohmic contact; Conductivity substrate is bonded to the upper surface of described TCO type conductivity DBR layer and forms the P electrode; And the N electrode, connect the lower surface that places described luminous epitaxial loayer.
In the rectilinear blue-light LED chip of TCO type conduction DBR of the present invention, described the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film are that homotype is mixed.Described the first N-type TCO film is the ITO material, and described the second N-type TCO film is the AZO material, and described n kind N-type TCO film is the GZO material.
The rectilinear blue-light LED chip of TCO type conduction DBR of the present invention also includes bonded layer, between described conductivity substrate and described TCO type conductivity DBR layer, described bonded layer is metal material, alloy material, non-metallic conducting material or organic conductive material, and described bonded layer is single layer structure or sandwich construction.
In the rectilinear blue-light LED chip of TCO type conduction DBR of the present invention, described conductivity substrate is metal material, alloy material or non-metallic conducting material, and described conductivity substrate is single layer structure or sandwich construction.
As mentioned above, rectilinear blue-light LED chip of TCO type conduction DBR of the present invention and preparation method thereof has following beneficial effect:
1, utilizes the easy and P-GaN formation ohmic contact of conductivity type DBR of the homotype TCO material formation of ITO or P type TCO and another kind of or multiple different refractivity, thereby effectively reduced the voltage of rectilinear LED tube core.
2, TCO type conduction DBR is because be comprised of resistant to elevated temperatures transparent conductive semiconductor film, and and P-GaN between have good adhesiveness, use Ag and Al non-refractory and the bad shortcoming of adhesiveness before effectively having solved.
3, TCO type conduction DBR in wider wavelength band, can keep 99% or more directly to reflectivity, and this reflectivity do not reduce with the temperature rising, the reflectivity that has effectively solved Ag or AL can be with the shortcoming of drop in temperature.
4, the combined type speculum that forms of TCO type conduction DBR/metal reflector is at the reflectivity of blue green light wave band) 99% teach mutually AL (91%) Ag (95%) to have higher reflectivity, and compare simple metallic mirror and have better axially reflective, more be conducive to light is reflected back chip front side, improve the axial intensity of led chip and the luminous efficiency of chip.
5, the TCO film has very excellent electric conductivity, its conductive capability metal that can match in excellence or beauty, so TCO type conduction DBR also has very excellent conductive capability, bring extra voltage can not for rectilinear LED.
6, the conductivity type DBR that forms of ITO or P type TCO and the another kind of TCO material conductivity type DBR that compares other types has great price advantage, can effectively reduce the production cost of chip, easily large-scale production.
Description of drawings
Fig. 1 to Fig. 5 is shown as the led chip cross section structure schematic diagram that presents according to each step in the manufacture method of the present invention.
Fig. 6 is shown as of the present invention rectilinear blue-light LED chip cross section structure schematic diagram in another embodiment.
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, person skilled in the art scholar can understand other advantages of the present invention and effect easily by content disclosed in the present specification.
Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to cooperate specification to disclose only, understand and reading for person skilled in the art scholar, be not to limit the enforceable qualifications of the present invention, so technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not affecting under the effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, that quotes in this specification reaches the term of " " etc. such as " upper surface ", " lower surface ", " left side ", " right side ", " centre ", " two ", also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under without essence change technology contents, when also being considered as the enforceable category of the present invention.
See also Fig. 1 to Fig. 5, be shown as the middle led chip cross section structure schematic diagram that presents according to each step of the present invention.As shown in the figure, the invention provides the manufacture method of the rectilinear blue-light LED chip of a kind of TCO type conduction DBR, described manufacture method may further comprise the steps at least:
As shown in Figure 1, at first execution in step 1, and a Sapphire Substrate 11 is provided, and forms luminous epitaxial loayer 12 in the upper surface of described Sapphire Substrate 11.Follow execution in step 2.
As shown in Figure 2, in step 2, in upper surface evaporation one deck TCO of described luminous epitaxial loayer 12 type conductivity DBR layer 13,
Upper surface evaporation one TCO type conductivity DBR layer 13 in described luminous epitaxial loayer 12, described TCO type conductivity DBR layer 13 is superimposed with the second N-type TCO film (diagram) and/or n kind N-type TCO film (diagram) by the first N-type TCO film (diagram) and forms, and the upper surface of described the first N-type TCO film and described luminous epitaxial loayer 12 forms ohmic contact; In present embodiment, described the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film are that homotype is mixed, to reduce the voltage of rectilinear blue-light LED chip.For example described the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film are all N-type and mix perhaps P type doping.
In the present embodiment, described the first N-type TCO film is different from second and/or the refractive index of n kind N-type TCO film.Particularly, described the first N-type TCO film is ITO (tin indium oxide, Indium-Tin Oxide) material, and described the second N-type TCO film is AZO (azo-compound, the ZnO of the 1-5%Al that namely mixed) material.Described n kind N-type TCO film is GZO (zinc gallium oxide) material, and is right, is not limited to this, and in other execution mode, described n kind N-type TCO film also can be other the homotype TCO material of multiple different refractivity.
As from the foregoing, utilize ITO or P type TCO and the conductivity type DBR layer 13 of homotype TCO material (the above-mentioned AZO material) formation of another kind of or multiple different refractivity easily to form ohmic contact with luminous epitaxial loayers 12, thereby effectively reduced the voltage of rectilinear LED tube core, and, because described TCO type conduction DBR layer 13 is comprised of resistant to elevated temperatures transparent conductive semiconductor film, and and have good adhesiveness between the luminous epitaxial loayer 12, use Ag and Al non-refractory and the bad shortcoming of adhesiveness before effectively having solved.
Follow execution in step 3.
As shown in Figure 3, in step 3, provide a conductivity substrate 14, in present embodiment, described conductivity substrate 14 is metal material, alloy material or non-metallic conducting material, and described conductivity substrate 14 is single layer structure or sandwich construction.Then, adopt wafer bond techniques described conductivity substrate 14 to be bonded to the upper surface of described TCO type conductivity DBR layer 13 to form the P electrode, in present embodiment, described conductivity substrate 14 is bonded to the upper surface of described TCO type conductivity DBR layer 13 by one deck bonded layer 15, particularly, described bonded layer 15 is metal material (such as being Au, Cu, Sn, Ag etc.), alloy material, non-metallic conducting material or organic conductive material, and described bonded layer 15 can also can be sandwich construction for single layer structure.Certainly, in other embodiment, also can described conductivity substrate 14 be bonded to by the mode of Direct Bonding the upper surface of described TCO type conductivity DBR layer 13 to form P electrode (not indicating).Follow execution in step 4.
As shown in Figure 4, in step 4, utilize laser lift-off technique to peel off described Sapphire Substrate 11, so that described Sapphire Substrate 11 is peeled off from the lower surface of described luminous epitaxial loayer 12.Follow execution in step 5.
As shown in Figure 5, in step 5, prepare N electrode 16 in the lower surface of described luminous epitaxial loayer 12, so far, namely produce low-voltage, the rectilinear blue-light LED chip of TCO type conduction DBR of high axially output.
The present invention also provides the rectilinear blue-light LED chip of a kind of TCO type conduction DBR, comprising: luminous epitaxial loayer 12, TCO type conductivity DBR layer 13, conductivity substrate 14 and N electrode 16.
For ease of understanding, please consult again Fig. 1 to Fig. 5.Described TCO type conductivity DBR layer 13 is stacked and placed on the upper surface of described luminous epitaxial loayer 12,
Described TCO type conductivity DBR layer 13 is superimposed with the second N-type TCO film (diagram) and/or n kind N-type TCO film (diagram) by the first N-type TCO film (diagram) and forms, and the upper surface of described the first N-type TCO film and described luminous epitaxial loayer 12 forms ohmic contact; In present embodiment, described the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film are that homotype is mixed, to reduce the voltage of rectilinear blue-light LED chip.For example described the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film are all N-type and mix perhaps P type doping.
In the present embodiment, described the first N-type TCO film is different from second and/or the refractive index of n kind N-type TCO film.Particularly, described the first N-type TCO film is ITO (tin indium oxide, Indium-Tin Oxide) material, and described the second N-type TCO film is AZO (azo-compound, the ZnO of the 1-5%Al that namely mixed) material.Described n kind N-type TCO film is GZO (zinc gallium oxide) material, and is right, is not limited to this, and in other execution mode, described n kind N-type TCO film also can be other the homotype TCO material of multiple different refractivity.
As from the foregoing, utilize ITO or P type TCO and the conductivity type DBR layer 13 of homotype TCO material (the above-mentioned AZO material) formation of another kind of or multiple different refractivity easily to form ohmic contact with luminous epitaxial loayers 12, thereby effectively reduced the voltage of rectilinear LED tube core, and, because described TCO type conduction DBR layer 13 is comprised of resistant to elevated temperatures transparent conductive semiconductor film, and and have good adhesiveness between the luminous epitaxial loayer 12, use Ag and Al non-refractory and the bad shortcoming of adhesiveness before effectively having solved.
Described conductivity substrate 14 is bonded to the upper surface of described TCO type conductivity DBR layer 13 and forms the P electrode, in present embodiment, described conductivity substrate 14 is metal material, alloy material or non-metallic conducting material, and described conductivity substrate 14 is single layer structure or sandwich construction.
Rectilinear blue-light LED chip of the present invention also includes one deck bonded layer 15, between described conductivity substrate 14 and described TCO type conductivity DBR layer 13, described bonded layer 15 is metal material (such as being Au, Cu, Sn, Ag etc.), alloy material, non-metallic conducting material or organic conductive material, and described bonded layer 1515 is single layer structure or sandwich construction.
Described N electrode 16 connects the lower surface that places described luminous epitaxial loayer 12.
In another embodiment, rectilinear blue-light LED chip of the present invention also includes one deck scattered reflection type reflector 17, be arranged between described bonded layer 15 and the described TCO type conductivity DBR layer 13, described scattered reflection type reflector 17 can be metal level or alloy-layer, also can be the single or multiple lift structure, be that 91% Al and reflectivity are that 95% Ag has higher reflectivity so that the combined type speculum that TCO type conductivity DBR layer 13 and scattered reflection type reflector 17 form is compared reflectivity at the reflectivity of blue green light wave band＞99%, and compare simple metallic mirror and have better axially reflective, more be conducive to light is reflected back chip front side, improve the axial intensity of led chip and the luminous efficiency of chip.
In sum, rectilinear blue-light LED chip of TCO type conduction DBR of the present invention and preparation method thereof utilizes the easy and luminous epitaxial loayer formation of the conductivity type DBR ohmic contact of the homotype TCO material formation of ITO or P type TCO and another kind of or multiple different refractivity, thereby has effectively reduced the voltage of rectilinear LED tube core; And described TCO type conduction DBR layer is because be comprised of resistant to elevated temperatures transparent conductive semiconductor film, and and P-GaN between have good adhesiveness, use Ag and Al non-refractory and the bad shortcoming of adhesiveness before effectively having solved; Moreover, TCO type among the present invention conduction DBR in wider wavelength band, can keep 99% or more directly to reflectivity, and this reflectivity do not reduce with the temperature rising, the reflectivity that has effectively solved Ag or AL can be with the shortcoming of drop in temperature.
In addition, the TCO film has very excellent electric conductivity, its conductive capability metal that can match in excellence or beauty, therefore TCO type conduction DBR also has very excellent conductive capability, bring extra voltage can for rectilinear LED, and the conductivity type DBR that is compared other types by the conductivity type DBR that ITO or P type TCO and another kind of TCO material form has great price advantage, can effectively reduce the production cost of chip, easily large-scale production.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (10)
1. the manufacture method of the rectilinear blue-light LED chip of TCO type conduction DBR is characterized in that described manufacture method may further comprise the steps at least:
1) provides a Sapphire Substrate, and form luminous epitaxial loayer in the upper surface of described Sapphire Substrate;
2) in the upper surface evaporation one TCO type conductivity DBR layer of described luminous epitaxial loayer, described TCO type conductivity DBR layer is superimposed by the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film and forms, and the upper surface of described the first N-type TCO film and described luminous epitaxial loayer forms ohmic contact;
3) provide a conductivity substrate, adopt wafer bond techniques described conductivity substrate to be bonded to the upper surface of described TCO type conductivity DBR layer to form the P electrode;
4) utilize laser lift-off technique to peel off described Sapphire Substrate, so that described Sapphire Substrate is peeled off from the lower surface of described luminous epitaxial loayer; And
5) prepare the N electrode in the lower surface of described luminous epitaxial loayer.
2. the manufacture method of the rectilinear blue-light LED chip of TCO type according to claim 1 conduction DBR, it is characterized in that: described the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film are the homotype doping.
3. the manufacture method of the rectilinear blue-light LED chip of TCO type according to claim 2 conduction DBR, it is characterized in that: described the first N-type TCO film is the ITO material, described the second N-type TCO film is the AZO material, and described n kind N-type TCO film is the GZO material.
4. the manufacture method of the rectilinear blue-light LED chip of TCO type according to claim 1 conduction DBR is characterized in that: in step 3) in, be the upper surface that described conductivity substrate is bonded to described TCO type conductivity DBR layer by a bonded layer; Described bonded layer is metal material, alloy material, non-metallic conducting material or organic conductive material, and described bonded layer is single layer structure or sandwich construction.
5. the manufacture method of the rectilinear blue-light LED chip of TCO type according to claim 1 conduction DBR, it is characterized in that: described conductivity substrate is metal material, alloy material or non-metallic conducting material, and described conductivity substrate is single layer structure or sandwich construction.
6. the rectilinear blue-light LED chip of TCO type conduction DBR is characterized in that, comprising:
Luminous epitaxial loayer;
TCO type conductivity DBR layer, be stacked and placed on the upper surface of described luminous epitaxial loayer, being superimposed by the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film forms, and the upper surface of described the first N-type TCO film and described luminous epitaxial loayer forms ohmic contact;
Conductivity substrate is bonded to the upper surface of described TCO type conductivity DBR layer and forms the P electrode; And
The N electrode connects the lower surface that places described luminous epitaxial loayer.
7. the rectilinear blue-light LED chip of TCO type according to claim 6 conduction DBR, it is characterized in that: described the first N-type TCO film and the second N-type TCO film and/or n kind N-type TCO film are the homotype doping.
8. the rectilinear blue-light LED chip of TCO type according to claim 7 conduction DBR, it is characterized in that: described the first N-type TCO film is the ITO material, and described the second N-type TCO film is the AZO material, and described n kind N-type TCO film is the GZO material.
9. the rectilinear blue-light LED chip of TCO type according to claim 6 conduction DBR, it is characterized in that: also include bonded layer, between described conductivity substrate and described TCO type conductivity DBR layer, described bonded layer is metal material, alloy material, non-metallic conducting material or organic conductive material, and described bonded layer is single layer structure or sandwich construction.
10. the rectilinear blue-light LED chip of TCO type according to claim 6 conduction DBR, it is characterized in that: described conductivity substrate is metal material, alloy material or non-metallic conducting material, and described conductivity substrate is single layer structure or sandwich construction.
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| CN201110212605.3A CN102903799B (en) | 2011-07-28 | 2011-07-28 | TCO (transparent conducting oxide) conducting DBR (distributed Bragg reflector) vertical blue-light LED (light-emitting diode) chip and manufacturing method thereof |
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| CN201110212605.3A CN102903799B (en) | 2011-07-28 | 2011-07-28 | TCO (transparent conducting oxide) conducting DBR (distributed Bragg reflector) vertical blue-light LED (light-emitting diode) chip and manufacturing method thereof |
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| CN110190083A (en) * | 2019-04-09 | 2019-08-30 | 华南师范大学 | High bandwidth GaN base vertical conductive structure LED light emitting device and preparation method |
| US11569414B2 (en) | 2021-02-17 | 2023-01-31 | Meta Platforms Technologies, Llc | Self-aligned ITO DBR based p-contact for small pitch micro-LED |
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| JP2008244461A (en) * | 2007-03-01 | 2008-10-09 | Canon Inc | Surface light-emitting laser, surface light-emitting laser array, and image forming apparatus using the same |
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| US20050139840A1 (en) * | 2003-12-25 | 2005-06-30 | Mu-Jen Lai | Gallium-nitride based light emitting diode structure and fabrication thereof |
| CN1750285A (en) * | 2004-09-13 | 2006-03-22 | 夏普株式会社 | Light emitting diode |
| KR20070082338A (en) * | 2006-02-16 | 2007-08-21 | 엘지전자 주식회사 | Led having vertical structure and the method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110190083A (en) * | 2019-04-09 | 2019-08-30 | 华南师范大学 | High bandwidth GaN base vertical conductive structure LED light emitting device and preparation method |
| US11569414B2 (en) | 2021-02-17 | 2023-01-31 | Meta Platforms Technologies, Llc | Self-aligned ITO DBR based p-contact for small pitch micro-LED |
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| CN102903799B (en) | 2015-04-01 |
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