CN102903726A - Wafer level packaging method for image sensor - Google Patents
Wafer level packaging method for image sensor Download PDFInfo
- Publication number
- CN102903726A CN102903726A CN2012103788154A CN201210378815A CN102903726A CN 102903726 A CN102903726 A CN 102903726A CN 2012103788154 A CN2012103788154 A CN 2012103788154A CN 201210378815 A CN201210378815 A CN 201210378815A CN 102903726 A CN102903726 A CN 102903726A
- Authority
- CN
- China
- Prior art keywords
- wafer
- light
- imageing sensor
- glass
- packaging method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides a wafer level packaging method for an image sensor. The packaging method comprises the following steps of: (a) forming a film filter on a glass substrate; (b) cutting the glass substrate so as to obtain separated filtering glass pieces, and detecting the glass substrate or the filtering glass pieces so as to judge whether defects exist in the glass substrate or the filtering glass pieces; (c) and adhering filtering glass pieces with defects smaller than the preset quantity to a light sensing surface of a wafer of the image sensor; and (d) cutting the wafer of the image sensor so as to obtain separated chips of the image sensor.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, relate to a kind of wafer-level packaging method of imageing sensor.
Background technology
Imageing sensor is a kind of transducer that can experience extraneous light and convert thereof into the signal of telecommunication.Imageing sensor adopts semiconductor fabrication process to carry out chip manufacturing usually.After image sensor chip completes, thereby by being carried out a series of packaging technologies, image sensor chip forms packaged imageing sensor again, to be used for the various electronic equipments such as digital camera, Digital Video etc.
Fig. 1 shows a kind of encapsulating structure of imageing sensor.As shown in Figure 1, this encapsulating structure comprises: image sensor chip 11, packaged glass 12, light-filtering glass 13, optical lens 14 and support 15.Wherein, packaged glass 12 supported side walls 16 are supported on photosurface one side of image sensor chip 11, to protect the photosensitive region 17 under it.Light-filtering glass 13 and optical lens 14 are supported on packaged glass 12 tops by support 15, to be used in advance light being carried out corresponding optical treatment before image formation by rays.Wherein, according to the difference of constituent material, the filter coating on the light-filtering glass 13 can filtering different wave length line, and infrared light for example is to improve the image quality of image sensor chip 11.
Yet additional light-filtering glass 13 can increase the thickness of image sensor package structure.Particularly in the situation that current day by day miniaturization of electronic equipment, portability, this requires the volume of packaged imageing sensor little, particularly the whole height of encapsulating structure can be as far as possible little, in order to reduce the integral thickness of the electronic equipment that is integrated with this structure.
In addition, the technique yield of imageing sensor that has added light-filtering glass 13 is lower, this so that its cost of manufacture increase.
Summary of the invention
Therefore, need a kind of method for packing that can reduce image sensor package structural volume and lower-cost imageing sensor.
The present inventor's discovery, the filter coating of the light-filtering glass that adopts in the conventional image sensor is to make by the mode of multiple physical vapour deposition.Be difficult to avoid ground, physical vapour deposition (PVD) can be introduced impurity particle in filter coating, thereby produces therein defective, and physical vapour deposition (PVD) repeatedly can further amplify this defective.Defective on the light-filtering glass can affect the imaging of image sensor chip.If defects count is too much, then the imageing sensor after the encapsulation can't use, and this has caused the packaging technology yield to descend, and causes cost of manufacture to increase.
One or more in addressing the above problem better in one aspect of the invention, provide a kind of wafer-level packaging method of imageing sensor, comprise the steps: that a. forms filter coating at glass substrate; B. cut the light-filtering glass of described glass substrate to obtain to separate, wherein, described glass substrate or described light-filtering glass are detected to determine wherein whether to have defective; C. the light-filtering glass that is less than predetermined quantity at the photosurface bonding defect of imageing sensor wafer; D. cut the image sensor chip of described imageing sensor wafer to obtain to separate.
In above-mentioned method for packing, light-filtering glass or glass substrate can be detected before bonding on the imageing sensor wafer, removing in advance the too much light-filtering glass of defects count, thereby can not cause because of bonding undesirable light-filtering glass the loss of image sensor chip.Therefore, above-mentioned method for packing can Effective Raise packaging technology yield, and reduces cost of manufacture.In addition; in this method for packing, owing to directly adopt the photosensitive region of protecting imageing sensor with the light-filtering glass of filter coating, thereby no longer need packaged glass; this has reduced the height of imageing sensor after the encapsulation greatly, thereby has reduced the volume of image sensor package structure.
In one embodiment, described step a comprises: adopt the physical vapour deposition (PVD) mode to form described filter coating.
In one embodiment, described step a further comprises: adopt the physical vapour deposition (PVD) mode described glass substrate alternately deposit multilayer titanium oxide and silica to form described filter coating.
In one embodiment, after described step b, described method also comprises: clean described light-filtering glass.
In one embodiment, described step b comprises: scan described glass substrate or described light-filtering glass to determine defective wherein.
In one embodiment, the step of described definite defective further comprises: with the glass substrate image that scans or light-filtering glass image with compare to determine defective with reference to image.
In one embodiment, after the step of described definite defective, also comprise: marking of defects is no less than the light-filtering glass of predetermined quantity.
In one embodiment, described step c comprises: make in photosurface one side of described imageing sensor wafer and support side wall; Described light-filtering glass is bonded to photosurface one side of described imageing sensor wafer by described support side wall and adhesive.
In one embodiment, before described steps d, also comprise: the pad that the output pin of described imageing sensor wafer is connected to described imageing sensor wafer rear.
Above summarized but not broadly provided the feature of content of the present invention.After this supplementary features of content of the present invention will described, and it has formed the theme of claim of the present invention.It will be appreciated by those skilled in the art that and easily to use disclosed design and embodiment, as the basis of revising or design other structures or process, in order to carry out the purpose identical with the present invention.Those skilled in the art it is also understood that these equivalent structures do not break away from the spirit and scope of the invention of putting down in writing in the appended claims.
Description of drawings
For more completely understand the disclosure with and advantage, now by reference to the accompanying drawings with reference to following description, wherein:
Fig. 1 shows the encapsulating structure of conventional image sensor;
Fig. 2 shows the according to an embodiment of the invention flow process of the wafer-level packaging method 100 of imageing sensor;
Fig. 3 to Fig. 9 shows the generalized section of an example of the method for packing 100 that adopts Fig. 2;
Figure 10 to 12 namely shows method for packing 100 another kind of optional output pin connected modes.
Unless indicate, otherwise the corresponding part of the general expression of the respective markers in the different accompanying drawing and symbol.The drafting accompanying drawing is the parties concerned for the execution mode that is shown clearly in present disclosure, and may not be drawn to scale.In order more to be shown clearly in some execution mode, after Reference numeral, may follow letter, the distortion of its indication same structure, material or process steps.
Embodiment
The below discusses enforcement and the use of embodiment in detail.Yet, should be appreciated that the specific embodiment of discussing only exemplarily illustrates enforcement and uses ad hoc fashion of the present invention, but not limit the scope of the invention.
Fig. 2 shows the according to an embodiment of the invention flow process of the wafer-level packaging method 100 of imageing sensor.
As shown in Figure 2, this method for packing 100 comprises: execution in step S102 forms filter coating at glass substrate; Execution in step S104, the light-filtering glass of glass-cutting substrate to obtain to separate, wherein, this glass substrate or light-filtering glass are detected to determine wherein whether to have defective; Execution in step S106 is less than the light-filtering glass of predetermined quantity at the photosurface bonding defect of imageing sensor wafer; Execution in step S108, the image sensor chip of cutting image transducer wafer to obtain to separate.
Can find out, owing to having increased the step S104 that detects defective, therefore, the too much light-filtering glass of defects count can not be bonded on the imageing sensor wafer, thereby can not cause the unnecessary loss of image sensor chip.Therefore, above-mentioned method for packing can Effective Raise packaging technology yield, and reduces cost of manufacture.In addition, in this method for packing, owing to directly will be bonded on the photosensitive region of imageing sensor with the light-filtering glass of filter coating, thereby no longer needing packaged glass, this has reduced whole height and the volume of imageing sensor after the encapsulation greatly.
Fig. 3 to Fig. 9 shows the generalized section of an example of the method for packing 100 that adopts Fig. 2.Next, in conjunction with Fig. 2 and Fig. 3 to Fig. 9, method for packing of the present invention is elaborated.
As shown in Figure 3, provide imageing sensor wafer 201, be formed with a plurality of imageing sensors 203 in this imageing sensor wafer 201, also be formed with the Cutting Road (not shown) between these a plurality of imageing sensors 203, to isolate different imageing sensor 203.Each imageing sensor 203 comprises one, and it jointly is distributed in a side of imageing sensor wafer 201 for the photosensitive array that extraneous light is carried out sensitization, and namely photosurface 205.Normally, for each imageing sensor 203, it also comprises the signal processing circuit (not shown), and this signal processing circuit is distributed in the periphery of photosensitive array, and contiguous Cutting Road.In actual applications, the interconnection layer (not shown) that also is formed with dielectric layer on the imageing sensor photosurface 205 and is arranged in dielectric layer, so that the circuit element that forms in this imageing sensor is drawn, wherein, this interconnection layer also comprises output pin 207.
In addition; as can be seen from Figure 3, in forming the process of filter coating 211, owing to sneaking into the reasons such as impurity particle or coating process be unstable; part position in the formed filter coating 211 has defective 213, and it has and the visibly different thickness in peripheral region or transmissivity etc. such as showing as.Defective 213 can affect the imaging of the photosensitive array of imageing sensor 203.Different defective 213 possibility sizes are not identical yet.Therefore, need to the glass substrate 209 that be formed with filter coating 211 be detected, to determine wherein whether to have defective.In some instances, can adopt optical detection apparatus to come glass substrate 209 is scanned, to determine the defective 213 on it.For example, can adopt the camera with optical lens to come scanning glass substrate 209, with the position of defective and the image of size in the defective 213, particularly filter coating 211 that generate reflection glass substrate 209 (comprising filter coating 211).Then, will scan the image that generates and compare with reference to image, so as to determining position and the size of defective 213.Perhaps alternatively, also can directly adopt some image processing algorithms to come the image that scanning generates is processed, wherein whether have defective 213 to detect.By this detecting step, quantity, size and the position of the defective 213 on the glass substrate 209 can be determined.Because the size of defective 213 is different for the impact of imageing sensor sensitization, therefore, according to different application demands, the point that can only size on the glass substrate 209 (for example area, the length of side or diameter) be surpassed a certain threshold value is defined as defective 213.
As shown in Figure 4, in some instances, after the defective on determining glass substrate 209, carry out again the step of glass-cutting substrate 209, glass substrate 209 is divided into a plurality of light-filtering glass of separation.Wherein, the size of the photosensitive array on the size of each light-filtering glass and the imageing sensor wafer 201 is mated substantially.In other examples, also can carry out first the step of glass-cutting substrate 209; And after glass substrate 209 is divided into a plurality of light-filtering glass of separation, respectively light-filtering glass is detected again, determining wherein whether to have defective 213, and the quantity, size etc. of defective 213 in each light-filtering glass.On the other hand, in actual applications, can also carry out mark to light-filtering glass, for example marking of defects is no less than the light-filtering glass of predetermined quantity, with the defects count of indicating this light-filtering glass, credit rating etc., and then indicate it whether can bond on the imageing sensor subsequently.
Glass-cutting substrate 209 can adopt laser cutting or machine cuts mode, perhaps other cutting modes that are fit to.For the cutting mode that is easy to form the cutting slag, for example the machine cuts mode can after the step of glass-cutting substrate 209, be cleaned light-filtering glass, removing the cutting slag that is attached on the light-filtering glass, thereby avoid it to affect the quality of light-filtering glass.
After obtaining the light-filtering glass that separates, need to be less than at the photosurface bonding defect of imageing sensor wafer 201 light-filtering glass of predetermined quantity.Wherein, each bonding light-filtering glass in photosensitive array top.
Particularly, as shown in Figure 5, can make in photosurface one side of imageing sensor wafer 201 and support side wall 217.This support side wall 217 is formed on outside the photosensitive array, for example covers the position of Cutting Road.In some instances, can adopt the mode of silk screen printing to form this support side wall 217.In other examples, also can have first the organic polymer material of light sensitive characteristic at imageing sensor wafer 201 coating one decks.For example, this organic polymer material has by the characteristic that can the molecule adhesion occur and solidify after the illumination.Then, photoetching is carried out in the subregion of the organic polymer material that is coated with, with graphical this organic polymer material.Like this, namely outside photosensitive array, form the structure of support-side wall 217.
Afterwards, supporting coating adhesive (not shown) on the side wall 217, light-filtering glass 215 is bonded to photosurface one side of imageing sensor wafer 201 by this support side wall 217 and adhesive.Like this, the light-filtering glass 215 that carries filter coating 211 namely is supported on the photosensitive array, and the discord photosensitive array directly contacts.In example shown in Figure 6, the side that light-filtering glass 215 has filter coating 211 is set to away from imageing sensor wafer 201, in other example, the side that light-filtering glass 215 has filter coating 211 also can be set near imageing sensor wafer 201.
Selectively, after bonding light-filtering glass 215, can also carry out attenuate in the relative back side to the photosurface of imageing sensor wafer 201, for example by back side grinding process this imageing sensor wafer 201 is thinned to below the predetermined thickness, for example below 200 microns.
Then, as shown in Figure 7, after bonding light-filtering glass 215, the output pin 207 with imageing sensor wafer 201 is connected on the pad 221 at imageing sensor wafer 201 back sides further.
In example shown in Figure 7, output pin 207 is connected to pad 221 by through hole 223.For example, can carry out etching by the welding disking area to this imageing sensor wafer 201 from imageing sensor wafer 201 back sides, run through the through hole 223 of imageing sensor wafer 201 with formation.Then, in this through hole 223, fill metal material again, copper for example, with via this metal material so that output pin 207 draw from imageing sensor wafer 201 back side electricity.Then, form welding material at this welding disking area again, such as the tin ball etc., to form pad 221 at this welding disking area.
Next, as shown in Figure 8, cutting image transducer wafer 201 is with the image sensor chip 225 that obtains to separate.The front of this image sensor chip 225 has covered light-filtering glass 215, and its back side also is provided with pad 221.
Afterwards, as shown in Figure 9, can further this image sensor chip 225 be installed on the printed circuit board (PCB) 227, and optical lens 231 be installed to photosurface one side of image sensor chip 225 by support 229, thereby finish the assembling of camera module.
To embodiment shown in Figure 9, the output pin 207 in the image sensor chip 225 is connected on the pad 221 by through hole 223 at Fig. 3.In actual applications, also can adopt other connected modes that are fit to come image sensor chip 225 is encapsulated, so that its output pin 207 electricity are drawn.Figure 10 to 12 namely shows another kind of optional output pin connected mode.
As shown in figure 10, after bonding to light-filtering glass 315 on the imageing sensor wafer 301.Etching is carried out until expose interconnection layer in the subregion at imageing sensor wafer 301 back sides, to form groove 341 at its back side.Normally, the zone of institute's etching is that the middle interconnecting piece of each photosensitive array in the imageing sensor wafer 301 divides, and namely Cutting Road is regional, and so that output pin 307 is wherein exposed, wherein, cut surface omits low dip usually.
Then, as shown in figure 11, in the backside deposition insulating barrier (not shown) of the imageing sensor wafer 301 that is etched.This insulating barrier for example can adopt the mode of coating organic material to form; Perhaps can pass through deposition of dielectric materials, for example the mode of silica forms.Afterwards, again on this insulating barrier deposit metallic material forming metal level 343, such as adopting physical gas-phase deposition deposited copper or aluminium on insulating barrier such as sputter.This metal level 343 also can cover sidewall and the bottom of groove 341.
Subsequently, as shown in figure 12, this metal level of partial etching is to form many conductive lead wires 345.This conductive lead wire 345 extends to respectively the photosurface of imageing sensor wafer 301 from imageing sensor wafer 301 back sides via the cut surface of groove 341, thereby each output pin 307 is led to the presumptive area at imageing sensor wafer 301 back sides, this presumptive area is used for as the welding disking area that pad is set.Next, form welding material at this welding disking area again, such as the tin ball etc., to form pad 321 at this welding disking area.
Although in accompanying drawing and aforesaid description, illustrate in detail and described the present invention, should think that this is illustrated and describes is illustrative and exemplary, rather than restrictive; The invention is not restricted to above-mentioned execution mode.
The those skilled in the art of those the art can be by research specification, disclosed content and accompanying drawing and appending claims, and understanding and enforcement are to other changes of the execution mode of disclosure.In the claims, word " comprises " element and the step of not getting rid of other, and wording " one ", " one " are not got rid of plural number.In the practical application of invention, the function of a plurality of technical characterictics of quoting during a part possibility enforcement of rights requires.Any Reference numeral in the claim should not be construed as the restriction to scope.
Claims (9)
1. the wafer-level packaging method of an imageing sensor is characterized in that, comprises the steps:
A. form filter coating at glass substrate;
B. cut the light-filtering glass of described glass substrate to obtain to separate, wherein, described glass substrate or described light-filtering glass are detected to determine wherein whether to have defective;
C. the light-filtering glass that is less than predetermined quantity at the photosurface bonding defect of imageing sensor wafer;
D. cut the image sensor chip of described imageing sensor wafer to obtain to separate.
2. wafer-level packaging method according to claim 1 is characterized in that, described step a comprises: adopt the physical vapour deposition (PVD) mode to form described filter coating.
3. wafer-level packaging method according to claim 2 is characterized in that, described step a further comprises: adopt the physical vapour deposition (PVD) mode described glass substrate alternately deposit multilayer titanium oxide and silica to form described filter coating.
4. wafer-level packaging method according to claim 1 is characterized in that, after described step b, described method also comprises: clean described light-filtering glass.
5. wafer-level packaging method according to claim 1 is characterized in that, described step b comprises:
Scan described glass substrate or described light-filtering glass to determine defective wherein.
6. wafer-level packaging method according to claim 5 is characterized in that, the step of described definite defective further comprises: with the glass substrate image that scans or light-filtering glass image with compare to determine defective with reference to image.
7. wafer-level packaging method according to claim 5 is characterized in that, after the step of described definite defective, also comprises: marking of defects is no less than the light-filtering glass of predetermined quantity.
8. wafer-level packaging method according to claim 1 is characterized in that, described step c comprises:
Make the support side wall in photosurface one side of described imageing sensor wafer;
Described light-filtering glass is bonded to photosurface one side of described imageing sensor wafer by described support side wall and adhesive.
9. wafer-level packaging method according to claim 1 is characterized in that, before described steps d, also comprises:
The output pin of described imageing sensor wafer is connected to the pad of described imageing sensor wafer rear.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210378815.4A CN102903726B (en) | 2012-09-29 | 2012-09-29 | The wafer-level packaging method of imageing sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210378815.4A CN102903726B (en) | 2012-09-29 | 2012-09-29 | The wafer-level packaging method of imageing sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102903726A true CN102903726A (en) | 2013-01-30 |
| CN102903726B CN102903726B (en) | 2016-02-10 |
Family
ID=47575892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210378815.4A Active CN102903726B (en) | 2012-09-29 | 2012-09-29 | The wafer-level packaging method of imageing sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102903726B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990379A (en) * | 2015-02-25 | 2016-10-05 | 联想(北京)有限公司 | Photosensitive module group and manufacturing method thereof |
| CN107301392A (en) * | 2017-06-20 | 2017-10-27 | 华天科技（昆山）电子有限公司 | Wafer level image harvester |
| CN107818311A (en) * | 2017-11-14 | 2018-03-20 | 北京思比科微电子技术股份有限公司 | A kind of method for packing of optical fingerprint sensor |
| CN108234833A (en) * | 2016-12-12 | 2018-06-29 | 三星电机株式会社 | Electronic module and its manufacturing method |
| CN108364969A (en) * | 2018-01-23 | 2018-08-03 | 北京思比科微电子技术股份有限公司 | A kind of cmos image sensor encapsulating structure |
| CN109273468A (en) * | 2018-09-05 | 2019-01-25 | 复旦大学 | Three-dimensional through-silicon via structure cmos image sensor and preparation method thereof |
| CN109510932A (en) * | 2016-02-18 | 2019-03-22 | 宁波舜宇光电信息有限公司 | Camera module and its molding circuit board module and manufacturing method based on moulding technology |
| CN109541281A (en) * | 2018-12-26 | 2019-03-29 | 新纳传感系统有限公司 | Glass isolator part and its manufacturing method, current sensor |
| CN109686751A (en) * | 2018-12-26 | 2019-04-26 | 中芯集成电路（宁波）有限公司 | The wafer scale preparation method and lens module structure of photosensitive mould group |
| WO2021082400A1 (en) * | 2019-11-01 | 2021-05-06 | 杭州美迪凯光电科技股份有限公司 | Cvd preparation method for reducing spot defects of camera module and product thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1517736A (en) * | 2003-01-27 | 2004-08-04 | ������������ʽ���� | Camera module and its manufacturing method |
| JP2006033297A (en) * | 2004-07-15 | 2006-02-02 | Ricoh Co Ltd | Image input apparatus, digital camera, and mobile information terminal |
| US20100068847A1 (en) * | 2008-09-12 | 2010-03-18 | Waldman Jaime I | Method for manufacturing an image sensor |
| CN102043278A (en) * | 2009-10-13 | 2011-05-04 | 日东电工株式会社 | Method and system for continuously manufacturing liquid-crystal display element |
-
2012
- 2012-09-29 CN CN201210378815.4A patent/CN102903726B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1517736A (en) * | 2003-01-27 | 2004-08-04 | ������������ʽ���� | Camera module and its manufacturing method |
| JP2006033297A (en) * | 2004-07-15 | 2006-02-02 | Ricoh Co Ltd | Image input apparatus, digital camera, and mobile information terminal |
| US20100068847A1 (en) * | 2008-09-12 | 2010-03-18 | Waldman Jaime I | Method for manufacturing an image sensor |
| CN102043278A (en) * | 2009-10-13 | 2011-05-04 | 日东电工株式会社 | Method and system for continuously manufacturing liquid-crystal display element |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990379A (en) * | 2015-02-25 | 2016-10-05 | 联想(北京)有限公司 | Photosensitive module group and manufacturing method thereof |
| CN105990379B (en) * | 2015-02-25 | 2019-07-26 | 联想(北京)有限公司 | A kind of photosensitive mould group and production method |
| CN109510932A (en) * | 2016-02-18 | 2019-03-22 | 宁波舜宇光电信息有限公司 | Camera module and its molding circuit board module and manufacturing method based on moulding technology |
| CN108234833A (en) * | 2016-12-12 | 2018-06-29 | 三星电机株式会社 | Electronic module and its manufacturing method |
| CN108234833B (en) * | 2016-12-12 | 2021-03-23 | 三星电机株式会社 | Electronic module and method for manufacturing the same |
| CN107301392A (en) * | 2017-06-20 | 2017-10-27 | 华天科技（昆山）电子有限公司 | Wafer level image harvester |
| CN107818311A (en) * | 2017-11-14 | 2018-03-20 | 北京思比科微电子技术股份有限公司 | A kind of method for packing of optical fingerprint sensor |
| CN107818311B (en) * | 2017-11-14 | 2021-11-02 | 北京思比科微电子技术股份有限公司 | Packaging method of optical fingerprint sensor |
| CN108364969A (en) * | 2018-01-23 | 2018-08-03 | 北京思比科微电子技术股份有限公司 | A kind of cmos image sensor encapsulating structure |
| CN109273468A (en) * | 2018-09-05 | 2019-01-25 | 复旦大学 | Three-dimensional through-silicon via structure cmos image sensor and preparation method thereof |
| CN109541281A (en) * | 2018-12-26 | 2019-03-29 | 新纳传感系统有限公司 | Glass isolator part and its manufacturing method, current sensor |
| CN109686751A (en) * | 2018-12-26 | 2019-04-26 | 中芯集成电路（宁波）有限公司 | The wafer scale preparation method and lens module structure of photosensitive mould group |
| CN109686751B (en) * | 2018-12-26 | 2021-09-14 | 中芯集成电路（宁波）有限公司 | Wafer-level preparation method of photosensitive module and lens module structure |
| WO2021082400A1 (en) * | 2019-11-01 | 2021-05-06 | 杭州美迪凯光电科技股份有限公司 | Cvd preparation method for reducing spot defects of camera module and product thereof |
| US12034020B2 (en) | 2019-11-01 | 2024-07-09 | Hangzhou Mdk Opto Electronics Co., Ltd | CVD preparation method for minimizing camera module dot defects and product thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102903726B (en) | 2016-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102903726B (en) | The wafer-level packaging method of imageing sensor | |
| CN103681715B (en) | Low Profile Image Sensor Package And Method | |
| KR102382364B1 (en) | Wafer level image sensor package | |
| US20110147782A1 (en) | Optical device and method of manufacturing the same | |
| KR100592368B1 (en) | Ultra-thin module manufacturing method of semiconductor device | |
| US11329090B2 (en) | Image sensor, manufacturing method, and electronic device | |
| CN102983144B (en) | Wafer level packaging method of image sensor | |
| US20060145325A1 (en) | FBGA and COB package structure for image sensor | |
| CN103137632A (en) | Interposer package for CMOS image sensor and method for making the same | |
| US20130161778A1 (en) | Electronics device package and fabrication method thereof | |
| CN102983111A (en) | Stepped package for image sensor and method of making same | |
| CN102403325A (en) | Semiconductor package and manufacturing method for a semiconductor package as well as optical module | |
| US9721837B2 (en) | Wafer level optoelectronic device packages with crosstalk barriers and methods for making the same | |
| CN102647564A (en) | Solid-state imaging device and method of manufacturing same and electronic apparatus | |
| US20090289318A1 (en) | Electronics device package and fabrication method thereof | |
| CN107634074B (en) | CMOS image sensor structure for preventing scribing damage and manufacturing method thereof | |
| US7335870B1 (en) | Method for image sensor protection | |
| US20130249036A1 (en) | Imager device with electric connections to electrical device | |
| CN107112220A (en) | Semiconductor devices, the method being used for producing the semiconductor devices, solid-state imaging element, image device and electronic installation | |
| JP2006191126A (en) | Method for manufacturing semiconductor device | |
| US9059058B2 (en) | Image sensor device with IR filter and related methods | |
| US20100025794A1 (en) | Image sensor chip package structure and method thereof | |
| CN108155198B (en) | CMOS image sensing packaging structure and manufacturing method thereof | |
| US11355659B2 (en) | Chip package and manufacturing method thereof | |
| CN102270586A (en) | Method for packaging semiconductor element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |