CN102903395B - The method for testing reliability of memorizer - Google Patents
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- CN102903395B CN102903395B CN201210403218.2A CN201210403218A CN102903395B CN 102903395 B CN102903395 B CN 102903395B CN 201210403218 A CN201210403218 A CN 201210403218A CN 102903395 B CN102903395 B CN 102903395B
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Abstract
The present invention provides the method for testing reliability of a kind of memorizer, including: memorizer is carried out the first test, it is judged that whether the first test result is more than or equal to the first criterion；If the first test result is more than or equal to the first criterion, memorizer is arranged the first mark；If the first test result is less than the first criterion, memorizer is arranged the second mark；Memorizer is carried out burin-in process；Memorizer through burin-in process is carried out the second test, it is judged that whether the second test result is more than or equal to the second criterion, and the second criterion is less than the first criterion；If the second test result is more than or equal to the second criterion, then memorizer is non-defective unit；If the second test result is less than the second criterion, it is judged that the identity type of memorizer, if memorizer is provided that the first mark, then memorizer is difference product；If the second mark that memorizer is arranged, then memorizer is non-defective unit.The present invention has higher accuracy to the judgement of data retention.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the method for testing reliability of a kind of memorizer.
Background technology
Memorizer is the memory device of computer system, is used for depositing program and data.Memorizer substantially may be used
It is divided into two big classes: volatile memory and nonvolatile storage.Volatile memory loses immediately when system is closed
Go to be stored in interior data；It needs lasting power supply supply to maintain data.Nonvolatile storage is being
System is closed or non-transformer is at once remaining to keep Data Data.
For memorizer, data holding ability (Data Retention), endurance (Endurance),
It is the parameter evaluating memory performance with interference (Disturb) etc..Complete at memorizer and prepare afterwards
Before dispatching from the factory, it will usually by reliability testing, the performance of memorizer is evaluated.
The reliability of a kind of flash memory is disclosed in the Chinese patent application of Publication No. CN102420017A
Method of testing, including: flash memory is bakeed, makes flash memory stand high temperature, and by read-only region before baking
The read-only data the first check value after checking algorithm calculates and read-only data in read-only zones after bakeing in territory
The second check value after checking algorithm calculates compares, if the first check value and the second check value phase
Deng, it is determined that flash memory memory ability is good.
In described Chinese patent application, the process baked and banked up with earth is for simulating the process that flash memory is aging.Existing skill
Art uses the technical scheme similar with described Chinese patent application, generally compares baking pre-test data and baking
Measurement data after training, it is judged that the performance of memorizer.
As a example by the data retention judging memorizer, generally the memorizer having been written into data is read
Go out to judge the data retention of memorizer, specifically, " 1 " data of storage in main reading memorizer
Judge.Such as, for memorizer, judgement electric current when reading data " 1 " is 10 μ A,
When carrying out reliability testing, in order to ensure that memorizer is up to specification, generally with higher criterion to depositing
Reservoir is the most qualified to be judged.Such as, it is judged that standard be read current be " 15 μ A ", deposit for above-mentioned
Reservoir, when reading the data of memorizer, during if the read out " 1 ", read current is more than " 15 μ A ",
The most up to specification, and if the read out the electric current read time " 1 " less than " 15 μ A ", then for difference product.
After memory data and is read after baking before baking and banking up with earth by prior art, generally use identical
Criterion judge memorizer the most qualified (bake and bank up with earth before with 15 μ A as criterion, after baking and banking up with earth still
With 15 μ A as criterion).
But, the method for above-mentioned reliability testing, easily by some not data holding ability poor product
Product are judged to the product of data holding ability difference, or the product of data holding ability difference is mistakenly considered non-defective unit,
This makes the accuracy of above-mentioned reliability testing not high enough.
Summary of the invention
The problem that the present invention solves is to provide the method for testing reliability of a kind of memorizer, the number to memorizer
According to the judgement of retentivity, there is higher accuracy.
In order to solve the problems referred to above, the present invention provides the method for testing reliability of a kind of memorizer, including:
Memorizer is carried out the first test, it is judged that whether the first test result of memorizer is sentenced more than or equal to first
Disconnected standard；If the first test result of memorizer is more than or equal to described first criterion, to described
Memorizer arranges the first mark；If the first test result of memorizer is less than described first criterion,
Described memorizer is arranged the second mark；Described memorizer is carried out burin-in process；To through burin-in process
Memorizer carry out the second test, it is judged that whether the first test result of memorizer is sentenced more than or equal to second
Disconnected standard, described second criterion is less than described first criterion；If the second test of memorizer
Result is more than or equal to described second criterion, and the most described memorizer is non-defective unit；If the of memorizer
Two test results are less than described second criterion, it is judged that the identity type of described memorizer, if described
Memorizer is provided that the first mark, and the most described memorizer is difference product；If described memorizer arrange the
Two marks, the most described memorizer is non-defective unit.
Alternatively, the step that memorizer carries out the first test includes: write " 1 " data in memorizer,
Reading " 1 " data in memorizer, it is thus achieved that read current, described read current is the first test knot
Really.
Alternatively, described first criterion is the first read current threshold value, and described second criterion is
Second read current threshold value, described first read current threshold value is more than described second read current threshold value.
Alternatively, described first read current threshold value is positioned at 1.1 ~ 1.2 with the ratio of the second read current threshold value
In the range of.
Alternatively, described first read current threshold value is 17 μ A, and described second read current threshold value is 15 μ A.
Alternatively, the described step that described memorizer arranges the first mark includes: in the sector of memorizer
The data of interior write labeled.
Alternatively, the described step that described memorizer arranges the second mark includes: write the most in memory
Enter the data of described labeled.
Alternatively, the step of the identity type of the described memorizer of described judgement includes: from the sector of memorizer
Interior reading data, it may be judged whether the data of described labeled can be read.
Alternatively, described memorizer is nonvolatile storage.
Alternatively, described memorizer is flash memory.
Optionally, the described step that described memorizer carries out burin-in process includes: make memorizer 250
DEG C temperature conditions under continue 72 hours.
Compared with prior art, the invention have the advantages that the present invention is provided with not in twice test
Same criterion, arranges higher criterion in the first test, arranges relatively low in the second test
Criterion, and any product is not got rid of, but to the first test
Different test results be identified, second test after, in conjunction with the mark of the test result of the first test
Know and the test result of the second test, judged the data of memorizer by the gap judging twice test
Retentivity, can be by the product of poor for data retention and relatively low saturation current (but data retention is well)
Product make a distinction, thus improve the accuracy of memory reliability test.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of method for testing reliability one embodiment of memorizer of the present invention.
Detailed description of the invention
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
The detailed description of the invention of the present invention is described in detail.
Elaborate detail in the following description so that fully understanding the present invention.But the present invention can
Being different from alternate manner described here implement with multiple, those skilled in the art can be without prejudice to this
Similar popularization is done in the case of invention intension.Therefore the present invention is not by following public detailed description of the invention
Limit.
The method for testing reliability of the memorizer of prior art is analyzed by inventor, finds that some has
There is the product of relatively low saturation current, when the first test slightly larger than read current threshold value during its read current,
And after burin-in process, read current when described product carries out the second test is slightly less than reading electricity
Stream threshold value, the data retention of these products is met design specification, but is stored by prior art
The method for testing reliability of device, is judged to difference product owing to it is unsatisfactory for the criterion of the second test.
Correspondingly, inventor provide the method for testing reliability of a kind of memorizer to solve the problems referred to above,
Higher criterion is set in the first test, relatively low criterion is set in the second test, and
And any product not being got rid of, but the different test results to the first test
Being identified, after second tests, the mark and second in conjunction with the test result of the first test is tested
Test result, judged the data retention of memorizer by the gap judging twice test, can be by number
Make a distinction according to the product of the poor and relatively low saturation current of retentivity (but data retention is well), from
And improve the accuracy of memory reliability test.
With reference to Fig. 1, it is shown that the flow process signal of method for testing reliability one embodiment of memorizer of the present invention
Figure.The method of the detection memorizer memory ability of the specific embodiment of the invention includes:
Step S1, carries out the first test to memorizer, it is judged that whether the first test result of memorizer is more than
Or equal to the first criterion；
Step S2 is if the first test result of memorizer is more than or equal to described first criterion, right
Described memorizer arranges the first mark；
Step S3, if the first test result of memorizer is less than described first criterion, deposits described
Reservoir arranges the second mark；
Step S4, carries out burin-in process to described memorizer；
Step S5, carries out the second test to the memorizer through burin-in process, it is judged that the first survey of memorizer
Whether test result is more than or equal to the second criterion, and described second criterion judges less than described first
Standard；
Step S6, if the second test result of memorizer is more than or equal to described second criterion, then
Described memorizer is non-defective unit；
Step S7, if the second test result of memorizer is less than described second criterion, it is judged that described
The identity type of memorizer, if described memorizer is provided that the first mark, the most described memorizer is for poor
Product；If the second mark that described memorizer is arranged, the most described memorizer is non-defective unit.
The reliability testing side of the memorizer of the specific embodiment of the invention is described in detail in detail below in conjunction with specific embodiment
Method.
Perform step S1, memorizer is carried out the first test, it is judged that the first test result of memorizer whether
More than or equal to the first criterion.Memorizer described herein can be with flash memory, read only memory
As a example by (Read-Only Memory, ROM).
Owing to memory reliability method of testing purpose of the present invention is to improve the essence of data retention test
Degree, and the data that data retention refers to memorizer storage do not have distortion after a while or lose
The ability that mistake can also effectively read.In actual application, keep feelings with the data of data in memorizer " 1 "
Condition judges the data retention of memorizer.
Therefore, correspondingly, described the first test carrying out memorizer refers to read memorizer
Operation, judges the read current that " 1 " data of storage in memorizer are corresponding is the most up to specification.
In particular it is required that first write " 1 " data in memorizer, afterwards " 1 " data in memorizer are carried out
Read, it is thus achieved that read current, described read current is the first test result.
The described step judging whether the first test result of memorizer is more than or equal to the first criterion
In, described first criterion refers to the first read current threshold value.First read current of the present invention
Threshold value is more than the read current threshold value of the first test in the method for testing reliability of prior art memory, i.e.
The present invention improves criterion in the first test.Such as, in prior art, read current threshold value is
15 μ A, and during the present invention first tests, the first read current threshold value is 17 μ A.
Perform step S2, if the first test result of memorizer is more than or equal to described first criterion,
Described memorizer is arranged the first mark.Specifically, if memorizer first test in first reading
Electric current is more than or equal to described first read current threshold value, then described memorizer carries out the first mark, institute
State the first mark for showing that memorizer test result in the first test (reads more than or equal to first
Current threshold).Such as, the described memorizer the first read current in the first test is 18 μ A, is more than
The first read current threshold value of described 17 μ A, carries out the first mark the most in memory.
The form of the first mark is not limited by the present invention, and the present embodiment is with in the sector of test memorizer
The data instance of write labeled.Such as, in the sector of memorizer, " 55 " or the letter of " AA " are write
Breath.Otherwise memorizer can also be carried out the first mark, as long as can obtain in subsequent step S7
Take described first to identify.
Perform step S3, if the first test result of memorizer is less than described first criterion, to institute
State memorizer and the second mark is set.Specifically, if memorizer first test in the first read current
Less than described first read current threshold value, then described memorizer is carried out the second mark, described second mark
For showing memorizer test result (less than the first read current threshold value) in the first test.Such as,
The described memorizer the first read current in the first test is 14.5 μ A, less than the first of described 17 μ A
Read current threshold value, carries out the second mark the most in memory.
The present embodiment second identifies to write the data instance of described labeled the most in memory.The present invention
The form of the second mark is not limited, as long as described second mark is different, rear with the first mark
First mark and the second mark can be made a distinction by continuous step S7.
So far complete the first test process to memorizer, the present invention memorizer is completed the first test it
After, it is not as prior art and equally memorizer is carried out any eliminating (being judged to difference product), but to storage
The Different Results of device the first test is identified, in case the result of follow-up combination the second test is to memorizer
Data retention is analyzed.
Perform step S4, described memorizer is carried out burin-in process.Described burin-in process is to deposit to simulate
Reservoir carries out the process of life-time service, specifically, described in the present embodiment, described memorizer is carried out aging place
The step of reason includes: make memorizer continue 72 hours under the temperature conditions of 250 DEG C, in such a way
Analog memory uses the situation of 10 years under conditions of 25 DEG C (room temperature).But the present embodiment is to aging
The condition processed does not limits.
Perform step S5, the memorizer through burin-in process is carried out the second test, it is judged that the of memorizer
Whether one test result is more than or equal to the second criterion, and described second criterion is less than described first
Criterion.The second test herein carried out memorizer refers to carry out the memorizer after burin-in process
Whether read operation, accord with the read current that " 1 " data of storage in the memorizer after burin-in process are corresponding
Close specification to judge.
Owing to being written with the data of " 1 " the most in memory, if right in this step
In memorizer after burin-in process, " 1 " data read, it is thus achieved that read current, this time obtain
Read current is the second test result.
The described step judging whether the second test result of memorizer is more than or equal to the second criterion
In, described second criterion refers to the second read current threshold value.Second read current of the present invention
Threshold value is (existing with the read current threshold value of the second test in the method for testing reliability of prior art memory
In technology, the first test is identical with the read current threshold value in the second test) identical.Such as, prior art
During middle read current threshold value is 15 μ A, and the present invention second tests, the second read current threshold value is 15 μ A.
It should be noted that the present invention is to the first criterion, the second criterion and prior art first
The relation between criterion in test the second test does not limits, and for the present invention, first sentences
Disconnected standard is more than the second criterion, and the most in the present embodiment, described first read current threshold value is big
In described second read current threshold value.
Perform step S6, if the second test result of memorizer is more than or equal to described second criterion,
The most described memorizer is non-defective unit.If during memorizer is tested second, read current is read still above second
Go out current threshold, illustrate that memorizer first is tested and the read current of the corresponding data " 1 " in the second test
The biggest, the most described memorizer has preferable data retention, enters with the characteristic of data retention
It is non-defective unit that row evaluates described memorizer.Such as: memorizer read current in the first test is that 18 μ A(are big
In 17 μ A), the read current in the second test is that 16 μ A(are more than 15 μ A), this memorizer is first
In test and the second test, the gap of read current is only 2 μ A, and described memorizer is after burin-in process
Data variation is little, has good data retention.
Perform step S7, if the second test result of memorizer is less than described second criterion, it is judged that
The identity type of described memorizer, if described memorizer is provided that the first mark, the most described memorizer
For difference product；If described memorizer is provided that the second mark, the most described memorizer are non-defective unit.
When the read current obtained in memorizer second is tested is less than the second current threshold, it is judged that memorizer
Identity type.Identity type described herein includes the first mark and the second mark, it is judged that the mark of memorizer
The step knowing type is to be designated the first mark or the process of the second mark described in judgement.
Specifically, if being provided that the first mark on described memorizer, represent that this memorizer is surveyed first
The read current obtained during examination is greater than the first current threshold, and the reading of this memorizer in the second test
Go out electric current and be less than the second current threshold, owing to the first current threshold is more than the second current threshold, represent described
Memorizer read current variable quantity before burin-in process and after burin-in process is more than the first current threshold and the
The difference of two current thresholds, say, that in described memorizer, " 1 " data of storage have occurred and that bigger
Change, judge that described memorizer is undesirable with data retention characteristic, for difference product.Such as: deposit
Reservoir read current in the first test is that 18 μ A(are more than 17 μ A), the reading electricity in the second test
Stream is that 14 μ A(are less than 15 μ A), this memorizer is the gap of read current in the first test and the second test
Being 4 μ A, described memorizer data variation after burin-in process is relatively big, has poor data and keeps
Power.
If on the contrary, be provided that the second mark on described memorizer, illustrate that this memorizer is surveyed first
Read current during examination is less than the first current threshold, and the read current when the second test is less than the second electric current
Threshold value, illustrates that the read current of twice test of described memorizer is little, and described memorizer simply has relatively
Low saturation current.Therefore judge that described memorizer, can be at it as non-defective unit with data retention characteristic
In his reliability testing, whether saturation current to memorizer meets design specification and tests.Such as:
Memorizer read current in the first test is that 16 μ A(are less than 17 μ A), the reading in the second test
Electric current is that 14 μ A(are less than 15 μ A), this memorizer is the difference of read current in the first test and the second test
Away from for 2 μ A, described memorizer data variation after burin-in process is little, and data retention meets and sets
Meter specification.
If it should be noted that differed between the first read current threshold value with the second read current threshold value
Greatly, the requirement that can make paired data retentivity is too low, and cannot judge the poor product that data retention is poor；
If the difference between the first read current threshold value and the second read current threshold value is too small, the most still it is difficult to differentiate
The poor product of data retention and there is relatively low saturation current product.It is preferred that described first reads
The ratio going out current threshold and the second read current threshold value is positioned in the range of 1.1 ~ 1.2.Such as, described
One read current threshold value is 17 μ A, and described second read current threshold value is 15 μ A.
In the present embodiment, due in step s 2, to write the data of labeled in the sector of memorizer
As the first mark, to write the data of described labeled the most in memory as the second mark, therefore,
Correspondingly, judge described in this step that the step of the identity type of described memorizer includes: from the fan of memorizer
Data are read, it may be judged whether the data of described labeled can be read in district.Such as, fan accordingly from memorizer
If the read out " 55 " or " AA " in district, then it represents that what described memorizer was arranged identifies for first, if
From respective sectors, do not read " 55 " or " AA ", then it represents that what described memorizer was arranged identifies for second,
Thus complete the judgement of identity type in memorizer.The present invention is to the first mark, the form of the second mark
Do not limit, correspondingly, to how performing to judge that the step of the identity type of described memorizer does not limits
System, the identity type of the described memorizer of described judgement is as the criterion can differentiate described first mark and the second mark.
The present invention can correspondingly be revised according to above-described embodiment, deforms and replace by those skilled in the art.
It should be noted that in above-described embodiment, the first criterion and the second criterion are with memorizer
Read current as a example by illustrate, but the invention is not limited in this regard, in other embodiments institute
Stating criterion and can also is that voltage represents the reading information of memorizer, those skilled in the art can basis
The present invention is correspondingly revised, deforms and replaces by above-described embodiment.
Although the present invention is open as above with preferred embodiment, but it is not for limiting the present invention, appoints
What those skilled in the art without departing from the spirit and scope of the present invention, may be by the disclosure above
Technical solution of the present invention is made possible variation and amendment by method and technology contents, therefore, every does not takes off
From the content of technical solution of the present invention, it is any that above example is made by the technical spirit of the foundation present invention
Simple modification, equivalent variations and modification, belong to the protection domain of technical solution of the present invention.
Claims (10)
1. the method for testing reliability of a memorizer, it is characterised in that including:
Memorizer is carried out the first test, it is judged that whether the first test result of memorizer is more than or equal to first
Criterion；Described memorizer is carried out the first test refer in memorizer write " 1 " data, right
In memorizer, " 1 " data carry out reading acquisition read current, and described read current is the first test result,
Judge the read current corresponding to " 1 " data of storage in memorizer is the most up to specification, described the
One criterion refers to the first read current threshold value；
If the first test result of memorizer is more than or equal to described first criterion, to described memorizer
First mark is set；
If the first test result of memorizer less than described first criterion, arranges the to described memorizer
Two marks；
Described memorizer is carried out burin-in process；
Memorizer through burin-in process is carried out the second test, it is judged that the second test result of memorizer whether
More than or equal to the second criterion, described second criterion is less than described first criterion；To depositing
Reservoir carries out the second test and refers to the memorizer after burin-in process is carried out read operation, to burin-in process
After the read current corresponding to " 1 " data of memorizer storage the most up to specification judge, to aging
In memorizer after process, " 1 " data carry out reading acquisition read current, and described read current is the second survey
Test result, described second criterion refers to the second read current threshold value；
If the second test result of memorizer is more than or equal to described second criterion, the most described memorizer
For non-defective unit；
If the second test result of memorizer is less than described second criterion, it is judged that the mark of described memorizer
Knowing type, if described memorizer is provided that the first mark, the most described memorizer is difference product；If institute
Stating the second mark that memorizer is arranged, the most described memorizer is non-defective unit.
2. the method for testing reliability of memorizer as claimed in claim 1, it is characterised in that described first reads
Go out current threshold more than described second read current threshold value.
3. the method for testing reliability of memorizer as claimed in claim 2, it is characterised in that described first reads
The ratio going out current threshold and the second read current threshold value is positioned in the range of 1.1～1.2.
4. the method for testing reliability of memorizer as claimed in claim 3, it is characterised in that described first reads
Going out current threshold is 17 μ A, and described second read current threshold value is 15 μ A.
5. the method for testing reliability of memorizer as claimed in claim 1, it is characterised in that described to described
Memorizer arranges the step of the first mark and includes: write the data of labeled in the sector of memorizer.
6. the method for testing reliability of memorizer as claimed in claim 5, it is characterised in that described to described
Memorizer arranges the step of the second mark and includes: write the data of described labeled the most in memory.
7. the method for testing reliability of memorizer as claimed in claim 6, it is characterised in that described judgement institute
The step of the identity type stating memorizer includes: read data in the sector of memorizer, it may be judged whether energy
Read the data of described labeled.
8. the method for testing reliability of memorizer as claimed in claim 1, it is characterised in that described memorizer
For nonvolatile storage.
9. the method for testing reliability of memorizer as claimed in claim 8, it is characterised in that described memorizer
For flash memory.
10. the method for testing reliability of memorizer as claimed in claim 1, it is characterised in that described to described
Memorizer carries out the step of burin-in process and includes: make memorizer continue 72 under the temperature conditions of 250 DEG C little
Time.
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| CN103336237B (en) * | 2013-06-28 | 2016-10-19 | 上海华虹宏力半导体制造有限公司 | Built-in endurance test system, ageing tester and corresponding endurance test method |
| KR20160146332A (en) * | 2015-06-12 | 2016-12-21 | 에스케이하이닉스 주식회사 | Memory system including plurality of storage areas and method of operating the same |
| CN107305792B (en) * | 2016-04-21 | 2021-03-12 | 北京兆易创新科技股份有限公司 | Method and device for testing memory |
| CN108831517B (en) * | 2018-05-23 | 2021-04-27 | 武汉忆数存储技术有限公司 | Method and test device for judging reliability of flash memory chip based on operation time or current |
| CN109390031A (en) * | 2018-10-23 | 2019-02-26 | 江苏华存电子科技有限公司 | A kind of semiconductor memory product high temperature ageing test method |
| CN109164329A (en) * | 2018-10-23 | 2019-01-08 | 江苏华存电子科技有限公司 | A kind of semiconductor memory product high/low temperature ageing testing method |
| CN109346121B (en) * | 2018-10-29 | 2020-11-27 | 深圳市江波龙电子股份有限公司 | Test method and test device for memory chip |
| CN110148435B (en) * | 2019-04-16 | 2020-12-01 | 珠海妙存科技有限公司 | Flash memory particle screening and grading method |
| CN113948145B (en) * | 2020-07-17 | 2024-05-14 | 长鑫存储技术有限公司 | Method, system, computer device and storage medium for testing packaged chip |
| CN112558871B (en) * | 2020-12-11 | 2022-12-20 | 成都佰维存储科技有限公司 | Flash memory data storage and analysis method and device, readable storage medium and electronic equipment |
| CN112700817A (en) * | 2021-01-18 | 2021-04-23 | 皇虎测试科技(深圳)有限公司 | Memory device quality evaluation method and device and computer readable storage medium |
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