CN102901534A - Film temperature ablation composite sensor and manufacture method thereof - Google Patents
Film temperature ablation composite sensor and manufacture method thereof Download PDFInfo
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- CN102901534A CN102901534A CN2012103625405A CN201210362540A CN102901534A CN 102901534 A CN102901534 A CN 102901534A CN 2012103625405 A CN2012103625405 A CN 2012103625405A CN 201210362540 A CN201210362540 A CN 201210362540A CN 102901534 A CN102901534 A CN 102901534A
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Abstract
The invention discloses a film temperature ablation composite sensor and a manufacture method thereof. The film temperature ablation composite sensor is an integrated film sensor for measuring ablation temperature and ablation speed of an insulating layer material. A group of film thermocouples is manufactured on the surface of a substrate by using a micro-mechanical processing technology, and then the film thermocouples are vertically embedded in a heat insulating layer. Therefore, the temperature of the ablation surface and different depth points of the heat insulating layer can be measured through the film thermocouple group, the position of the ablation surface of the heat insulating layer can be judged through connection and disconnection of the film thermocouples, and the ablation speed of the heat insulating layer material can be obtained by combing the ablation time. By adopting the manufacture method, the film temperature ablation composite sensor has the advantages of being capable of simultaneously measuring ablation change in the ablation process of the insulating layer material and the ablation speed of the insulating layer and providing a data reference for the design of the heat insulating layer. In addition, the film temperature ablation composite sensor is simple in preparation process and reliable in structure.
Description
Technical field
The invention belongs to film special sensor technical field, be specifically related to a kind of thin film sensor based on micromachining technology and preparation method thereof.More particularly, the present invention relates to a kind of film temperature ablation compound sensor and preparation method thereof, by the measurement of film thermocouple realization insulation erosion temperature and ablation velocity, this film temperature ablation compound sensor manufacturing process is simple, has higher measuring accuracy.
Background technology
Heat insulation layer is mainly used in solid propellant rocket, reenters in the thermal protection of the spacecrafts such as aeronautical vehicle, and the quality of heat insulation layer performance directly has influence on the reliability of engine operation, even has influence on the success or failure of rocket launching.
The working environment of heat insulation layer is very abominable, and it will stand the ablation of high temperature and high pressure gas and washing away of solidifying mutually particle, can cause the internal insulation protection to be lost efficacy when serious, and motor body burns, and causes power failure.Therefore, heat insulation layer thickness and geometric configuration thereof etc. directly have influence on the solid propellant rocket structural reliability, and the design of heat insulation layer is determined by its ablation situation, and heat insulation layer material ablation speed is one of important reference of heat insulation layer design.
In addition, because the violent friction with surrounding air, the temperature on heat insulation layer surface sharply raises, if can not correctly grasp the heat insulation layer temperature variation, design suitable heat insulation layer thickness, temperature can be passed to the aircraft body surface, and cause that the body surface temperature sharply raises, and then the structural strength that causes organism material reduces, Stiffness, causes the aircraft profile to destroy, and will cause abortive launch when serious.The aircraft surface temperature acutely raises, if a large amount of Aerodynamic Heating has little time to scatter and disappear, can cause the body surface temperature.It is one of important reference of heat insulation layer design that heat insulation layer material ablation surface and ablation layer internal temperature change.
Therefore, need a kind of temperature and ablation compound sensor to measure simultaneously the temperature in the insulation erosion process and ablation velocity.At present, ablation velocity is measured by ablation sensor, and temperature sensor is adopted in temperature survey, does not measure when also having a kind of sensor can realize insulation erosion temperature and ablation velocity.
The inventor had once introduced a kind of thin film ablation sensor and preparation method thereof, prepared one group of gold thin film resistance on the alumina ceramic substrate surface by micromachining technology, can draw by the break-make of gold thin film resistance insulation erosion speed, the thin film ablation sensor production technique of this invention is simple, and can design different sheet resistance gaps and reach different measuring accuracy requirements.But the thin film ablation sensor of this invention can only obtain the ablation velocity of heat insulation layer, can not obtain simultaneously the insulation erosion temperature parameters.
Patent ZL02205585.1 has introduced a kind of Deivice for measuring transient temp. of ceramic warhead surface of guided missile high-speed thermal shock test.This is invented thermocouple material spot welding balling-up, and adopts the stainless steel compressing tablet thermopair to be pressed in the pit on guided missile surface, and this version not only can be destroyed the aircraft surface flow field, and reliability standard is low, can't the requirement of to satisfy effectively aircraft thermometric.
Patent CN201716128 has described a kind of temperature measuring device for outer surface of high-speed aircraft, wherein the sensing head top of temperature probe is positioned at body surface heat insulation layer 0.8mm～1mm, this mounting means is measured the true temperature that resulting temperature is not the body outside surface, can only calculate by Aerodynamic Heating and proofread and correct the approximate value that obtains the aircraft hull-skin temperature.
Summary of the invention
The present invention is intended to propose a kind of film temperature ablation compound sensor and preparation method thereof, measure when can realize insulation erosion temperature and ablation velocity, this temperature ablation compound sensor adopts existing maturation process technology and material substantially, production technology is simple, easy for installation, can not affect the Flight Vehicle Structure reliability, have good anti-environmental interference ability and reliability level.
In order to achieve the above object, technical scheme provided by the invention is:
Described film temperature ablation compound sensor 1 comprises substrate 2, is located at the transition bed 3 on the substrate 2, is located at the film thermocouple array on the transition bed 3; Described film thermocouple array is provided with diaphragm 6; Described film thermocouple array is by comprising electrode 4(such as PtRh13 electrode more than two) and B electrode 5(such as Pt electrode) film thermocouple 10 consist of; Described film thermocouple 10 comprises the compensating wire 7 that the thermoelectrical potential signal of film thermocouple 10 is drawn;
Wherein, described substrate 2 materials are Al
2O
3Pottery, its diameter are 50mm～150mm, thickness 0.5mm～1mm; Described transition bed 3 materials are Ta
2O
5, thickness is 0.05 μ m～0.1 μ m; The thickness of described film thermocouple 10 is 0.2 μ m～0.5 μ m; Described diaphragm 6 is dielectric substance, is preferably SiO
2, thickness is 0.1 μ m～0.2 μ m.
Described film thermocouple 10 is occasionally S type thermopair of R type thermopair, Type B thermoelectricity, is preferably R type thermopair.
The compound sensor 1 of film temperature can being ablated is embedded in heat insulation layer 8 materials, realizes ablation temperature and ablation velocity biparametric in the insulation erosion process of workpiece for measurement 9 are measured.
The preparation method of said film temperature ablation compound sensor comprises the steps:
(1) cleans substrate, remove substrate surface greasy dirt and impurity;
(2) the stainless steel mask with substrate and film thermocouple A electrode is set in together, and clips on the planet carrier that is placed on the deposition plating system with the stainless steel anchor clamps;
(3) successively at the membraneous material of substrate surface deposit transition layer film and film thermocouple A electrode, take off the stainless steel mask; Wherein transition layer film is in order to strengthening the adhesion of thermopair film and substrate layer, and strengthens thermopair film stability at high temperature;
(4) the stainless steel mask plate with substrate and film thermocouple B electrode is set in together, and clips on the planet carrier that is put in the deposition plating system with the stainless steel anchor clamps;
(5) successively at the membraneous material of substrate surface deposit transition layer film and film thermocouple B electrode; Take off the stainless steel mask;
(6) will put into the high-temperature atmosphere annealing furnace through the film thermocouple substrate that above-mentioned steps is made, the thermopair film for preparing will be carried out annealing in process, the galvanic couple membrane structure is tended towards stability;
(7) film thermocouple substrate and stainless steel mask are set in together and put into deposition plating system planet carrier, the deposition diaphragm;
(8) utilize the microtome section to make film temperature ablation compound sensor;
(9) film temperature is ablated electrode and the compensating wire of compound sensor upper film thermopair welds with resistance welder.
Wherein, the described annealing temperature of step (6) is 600 ℃～800 ℃, and annealing atmosphere is vacuum, and annealing time is 0.5～1 hour.
Below in conjunction with the design and principle of work the invention will be further described:
The film temperature ablation compound sensor that the present invention proposes; comprise substrate; be located at on-chip transition bed; be provided with the film thermocouple array on the transition bed; described film thermocouple array is provided with diaphragm, and described film thermocouple array is made of plural film thermocouple, can require design modifying thermopair number and gap according to actual measurement; to satisfy different measuring accuracy requirements, described film thermocouple comprises compensating lead wire.In engine working process, ablation along with heat insulation layer, film thermocouple is exposed in the engine high-temperature environment successively one by one, high temperature and particle wash away and will cause the disconnection of film thermocouple, by signal pickup assembly the make-and-break signal of film thermocouple is carried out real time scan and collection, obtain the break-make of film thermocouple and the relation between the time, can obtain the insulation erosion rate and concern over time, realize the measurement of insulation erosion performance.Meanwhile, film thermocouple can obtain the temperature value of heat insulation layer respective depth synchronously, and can draw by the heat insulation layer Thermal Analysis surface temperature of ablation face.Like this, film temperature ablation compound sensor of the present invention has realized that insulation erosion process temperature, ablation velocity biparametric measure in real time.
Wherein, described substrate material is Al
2O
3Pottery, its diameter are 50mm～150mm, thickness 0.5mm～1mm; Described buffer layer material is Ta
2O
5, thickness is 0.05 μ m～0.1 μ m; Described thermopair is a kind of of R type thermopair, Type B thermopair, S type thermopair, preferred R type thermopair, and its thickness is 0.1 μ m～0.2 μ m; Described diaphragm is dielectric substance, is preferably SiO
2, thickness is 0.1 μ m～0.2 μ m.Further, the film thermocouple array is made of the multiple row film thermocouple that is no less than 2 row, film thermocouple longitudinal separation is as impact and determine one of deciding factor of ablation velocity measuring accuracy, can and require according to product performance to determine longitudinal separation value between the film thermocouple, to obtain different properties of product.
Compared with prior art, the invention has the beneficial effects as follows:
A) the present invention adopts ripe technology and material, prepared a cluster film thermopair at substrate surface, when engine operation or aircraft flight, ablation along with heat insulation layer, be embedded in the temperature value that film thermocouple in the heat insulation layer can obtain the heat insulation layer respective depth, also can draw by the heat insulation layer Thermal Analysis surface temperature of ablation face;
B) because film thermocouple will be exposed in the High Temperature High Pressure rugged surroundings by group, the film thermocouple state becomes disconnection by conducting, gather and record by this on off operating mode of data acquisition card with resistance, in the situation of known film thermopair axial clearance, just can obtain insulation erosion speed through simple calculating;
C) the present invention adopts the micromachining technologies such as sputtering deposit technology, stainless steel mask technique, resistance welding technology, be conducive to improve the consistance of processing technology and the reliability level of working sensor, and can realize the batch production of film temperature ablation compound sensor effectively reducing manufacturing cost;
D) the present invention utilizes micromachining technology can make simultaneously hundreds of thousands of film temperature ablation compound sensors on a slice substrate, improves the controllability level of working (machining) efficiency, machining reproducibility and processing dimension, and greatly reduces manufacturing cost.
Description of drawings
Fig. 1 is film temperature ablation compound sensor structural representation of the present invention;
Fig. 2 is film temperature ablation compound sensor preparation technology process flow diagram of the present invention;
Fig. 3 is the structural representation of making a plurality of film temperature ablation compound sensors at same substrate;
Fig. 4 is the structural representation that Fig. 1 film temperature ablation compound sensor is embedded in heat insulation layer to be measured;
Among the figure: 1, film temperature ablation compound sensor; 2, substrate; 3, transition film; 4, A electrode; 5, B electrode; 6, diaphragm; 7, compensating wire; 8, heat insulation layer; 9, workpiece for measurement; 10, film thermocouple.
Embodiment
Referring to Fig. 1 to Fig. 4, described film temperature ablation compound sensor 1 comprises substrate 2, is located at the transition bed 3 on the substrate 2, is located at the film thermocouple array on the transition bed 3; Described film thermocouple array is provided with diaphragm 6; Described film thermocouple array is made of the film thermocouple 10 that comprises electrode 4 and B electrode 5 more than two; Described film thermocouple 10 comprises the compensating wire 7 that the thermoelectrical potential signal of film thermocouple 10 is drawn;
Wherein, described substrate 2 materials are Al
2O
3Pottery, its diameter are 50mm～150mm, thickness 0.5mm～1mm; Described transition bed 3 materials are Ta
2O
5, thickness is 0.05 μ m～0.1 μ m; Described film thermocouple 10 is R type PtRh13-Pt thermopair, and its thickness is 0.2 μ m～0.5 μ m; Described diaphragm 6 materials are SiO
2, thickness is 0.1 μ m～0.2 μ m.
Referring to Fig. 2, the present invention, described film temperature ablation compound sensor preparation method may further comprise the steps:
(1) to the Al of diameter 50mm～150mm, thickness 0.5mm～1mm
2O
3Substrate cleans, and removes the greasy dirt of substrate polished surface and impurity and stains etc.;
(2) the stainless steel mask with substrate and R type PtRh13-Pt thermopair PtRh13 electrode is set in together, and clips on the planet carrier of putting into ion beam sputtering film coating machine with the stainless steel anchor clamps;
(3) utilize the Ta of ion beam sputter depositing thickness 0.05 μ m～0.1 μ m
2O
5The PtRh13 thermopair film of transition film and 0.1 μ m～0.2 μ m takes off the stainless steel mask;
(4) the stainless steel mask with substrate and R type PtRh13-Pt thermopair Pt electrode is set in together, and clips on the planet carrier of putting into ion beam sputtering film coating machine with the stainless steel anchor clamps;
(5) utilize the Ta of ion beam sputter depositing thickness 0.05 μ m～0.1 μ m
2O
5The Pt thermopair film of transition film and 0.1 μ m～0.2 μ m takes off the stainless steel mask;
(6) will put into the high-temperature atmosphere annealing furnace through the film thermocouple substrate that above-mentioned steps is made, under 600 ℃～800 ℃ conditions, carry out vacuum annealing 0.5～1 hour;
(7) the stainless steel mask with film thermocouple substrate and diaphragm is set in together, and puts on the planet carrier of ion beam deposition machine, deposits 0.1 μ m～thick SiO of 0.2 μ m
2Film;
(8) use the scribing machine scribing, film temperature ablation compound sensor is cut apart moulding;
(9) adopting resistance welder to finish respectively PtRh13 film thermocouple electrode is being connected of 75 μ m PtRh13 compensating lines with diameter, and being connected of the Pt compensating line of Pt thermopair electrode and wire diameter 75 μ m.
So far, finish the preparation of film temperature ablation compound sensor of the present invention.Sensor can be embedded in the heat insulation layer material in, realize that ablation temperature and ablation velocity biparametric are measured in the insulation erosion process.
The content that above-described embodiment is illustrated should be understood to these embodiment and only is used for being illustrated more clearly in the present invention, limit the scope of the invention and be not used in, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
Claims (8)
1. a film temperature ablation compound sensor is characterized in that, described film temperature ablation compound sensor (1) comprises substrate (2), is located at the transition bed (3) on the substrate (2), is located at the film thermocouple array on the transition bed (3); Described film thermocouple array is provided with diaphragm (6); Described film thermocouple array is made of the film thermocouple (10) that comprises A electrode (4) and B electrode (5) more than two; Described film thermocouple (10) comprises the compensating wire (7) that the thermoelectrical potential signal of film thermocouple (10) is drawn; Described substrate (2) material is Al
2O
3Pottery; Described transition bed (3) material is Ta
2O
5Described diaphragm (6) is dielectric substance.
2. film temperature ablation compound sensor as claimed in claim 1 is characterized in that, described substrate (2) diameter is 50mm～150mm, thickness 0.5mm～1mm; Described transition bed (3) thickness is 0.05 μ m～0.1 μ m; The thickness of described film thermocouple (10) is 0.2 μ m～0.5 μ m; Described diaphragm (6) thickness is 0.1 μ m～0.2 μ m.
3. film temperature ablation compound sensor as claimed in claim 1 is characterized in that, described film thermocouple (10) is occasionally S type thermopair of R type thermopair, Type B thermoelectricity.
4. film temperature ablation compound sensor as claimed in claim 3 is characterized in that, described film thermocouple (10) is R type thermopair.
5. film temperature ablation compound sensor as claimed in claim 1 is characterized in that, described diaphragm (6) material is SiO
2
6. the preparation method such as film temperature ablation compound sensor as described in one of claim 1～5 comprises the steps:
(1) cleans substrate;
(2) the stainless steel mask with substrate and film thermocouple A electrode is set in together and is put on the planet carrier of deposition plating system;
(3) successively at the membraneous material of substrate surface deposit transition layer film and film thermocouple A electrode, take off the stainless steel mask;
(4) the stainless steel mask plate with substrate and film thermocouple B electrode is set in together and is put on the planet carrier of deposition plating system;
(5) successively at the membraneous material of substrate surface deposit transition layer film and film thermocouple B electrode; Take off the stainless steel mask;
(6) will put into the high-temperature atmosphere annealing furnace through the film thermocouple substrate that above-mentioned steps is made, the thermopair film of preparation will be annealed;
(7) film thermocouple substrate and stainless steel mask are set in together and put into deposition plating system planet carrier, the deposition diaphragm;
(8) section makes film temperature ablation compound sensor;
(9) film temperature the is ablated electrode of compound sensor upper film thermopair and compensating wire welding.
7. method as claimed in claim 6 is characterized in that, the described annealing temperature of step (6) is 600 ℃～800 ℃, and annealing atmosphere is vacuum.
8. method as claimed in claim 6 is characterized in that, the described annealing time of step (6) is 0.5～1 hour.
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Cited By (7)
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| CN104458059A (en) * | 2014-11-25 | 2015-03-25 | 安徽恒源煤电股份有限公司 | Calibration device of thermocouple series |
| CN108414577A (en) * | 2018-01-30 | 2018-08-17 | 哈尔滨工业大学 | A kind of erosion measurement sensor and production method |
| CN112067662A (en) * | 2020-08-28 | 2020-12-11 | 北京千河空间科技有限公司 | Aircraft surface ablation retreating amount measuring method and device and aircraft |
| CN113008399A (en) * | 2021-01-26 | 2021-06-22 | 松诺盟科技有限公司 | High-temperature corrosion-resistant thermocouple and processing method thereof |
| CN114001781A (en) * | 2021-11-10 | 2022-02-01 | 北京千河空间科技有限公司 | Layered temperature and ablation synchronous measurement method, device and application |
| CN114224426A (en) * | 2021-12-13 | 2022-03-25 | 大连交通大学 | Embedded bone drilling monitoring device for multi-parameter in-situ measurement |
| CN114485374A (en) * | 2022-03-22 | 2022-05-13 | 中国电子科技集团公司第四十九研究所 | Broken-through ablation sensor for bow-shaped printing sheet |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104458059A (en) * | 2014-11-25 | 2015-03-25 | 安徽恒源煤电股份有限公司 | Calibration device of thermocouple series |
| CN108414577A (en) * | 2018-01-30 | 2018-08-17 | 哈尔滨工业大学 | A kind of erosion measurement sensor and production method |
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| CN112067662A (en) * | 2020-08-28 | 2020-12-11 | 北京千河空间科技有限公司 | Aircraft surface ablation retreating amount measuring method and device and aircraft |
| CN113008399A (en) * | 2021-01-26 | 2021-06-22 | 松诺盟科技有限公司 | High-temperature corrosion-resistant thermocouple and processing method thereof |
| CN114001781A (en) * | 2021-11-10 | 2022-02-01 | 北京千河空间科技有限公司 | Layered temperature and ablation synchronous measurement method, device and application |
| CN114224426A (en) * | 2021-12-13 | 2022-03-25 | 大连交通大学 | Embedded bone drilling monitoring device for multi-parameter in-situ measurement |
| CN114224426B (en) * | 2021-12-13 | 2023-11-14 | 大连交通大学 | Embedded bone drilling monitoring device for multi-parameter in-situ measurement |
| CN114485374A (en) * | 2022-03-22 | 2022-05-13 | 中国电子科技集团公司第四十九研究所 | Broken-through ablation sensor for bow-shaped printing sheet |
| CN114485374B (en) * | 2022-03-22 | 2023-09-05 | 中国电子科技集团公司第四十九研究所 | Cut-through ablation sensor for bow-shaped printed sheet |
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Application publication date: 20130130 |