CN102891105A - Manufacture method of thin film transistor array - Google Patents
Manufacture method of thin film transistor array Download PDFInfo
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- CN102891105A CN102891105A CN 201210220755 CN201210220755A CN102891105A CN 102891105 A CN102891105 A CN 102891105A CN 201210220755 CN201210220755 CN 201210220755 CN 201210220755 A CN201210220755 A CN 201210220755A CN 102891105 A CN102891105 A CN 102891105A
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Abstract
The invention relates to a manufacture method of a thin film transistor array. The manufacture method comprises the following steps: drawing a thin film transistor array pattern with scanning line pins at four edges of the array on the surface of plate glass on a set of mask plate; manufacturing the thin film transistor array with scanning lines at the four edges of the array on the plate glass according to the drawn pattern; and cutting the manufactured thin film transistor array into a thin film transistor array with lager area or a plurality of thin film transistor arrays with smaller area according to the requirement. The production efficiency of the thin film transistor array with larger area and less production quantity is improved; the reject ratio of large-area thin film transistor array panels is reduced, and a process and a material of a small-area thin film transistor array panel can be utilized to manufacture the larger-area thin film transistor array panels, so that the cost of each large-area panel is reduced.
Description
Technical field
The present invention relates to the manufacture method of thin-film transistor (Thin Film Transistor, TFT) array, especially relate to the manufacture method for the liquid crystal panel tft array.
Background technology
Tft array generally includes row (grid) scan line and row (data) scan line, horizontal scanning line pin and the column scan wire pin that intersects in length and breadth, and the TFT that is connected with the column scan line with horizontal scanning line.Liquid crystal panel tft array manufacture method is at present: at first produce the required mask plate of a cover tft array, described tft array is drawn the scan line pin from mutually perpendicular two limits of array; Then, produce required tft array by Multiple depositions, the post-exposure of mask plate alignment and lithography step.Although the mask set plate has a plurality of exposure regions, can make simultaneously a plurality of tft array, the specification of the tft array of manufacturing is identical with area.The weak point of the method is exactly the tft array that the mask set plate can only be made a kind of specification, area.Make negligible amounts such as need, then cost is very high for the larger tft array of area.And because some unpredictable factors, do not clean up etc. such as dust, can cause tft array the bad point of unrepairable to occur, and the existence of a bad point may cause whole tft array to be scrapped.Because tft array is larger, the chance that bad point occurs is higher, and therefore, TFT panel area is larger at present, and yield is lower, and cost is just higher.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of tft array, adopt the mask set plate just can produce easily the tft array of plurality of specifications and size.
The manufacture method of a kind of thin film transistor (TFT) array of the present invention, described thin film transistor (TFT) array comprises: the horizontal scanning line that intersects in length and breadth and column scan line, horizontal scanning line pin, column scan wire pin, and the thin-film transistor that is connected with the column scan line with horizontal scanning line, described manufacture method may further comprise the steps: A. draws the thin film transistor (TFT) array pattern that the scan line pin can be arranged on surface of plate glass manufacturing array four limits at the mask set plate; B., the thin film transistor (TFT) array that the scan line pin is arranged on surface of plate glass manufacturing array four limits according to steps A draw a design; C. as required the thin film transistor (TFT) array of step B manufacturing is cut into the larger thin film transistor (TFT) array of area or be divided into the less thin film transistor (TFT) array of several areas.
The manufacture method of a kind of thin film transistor (TFT) array of the present invention, described thin film transistor (TFT) array comprises: the horizontal scanning line that intersects in length and breadth and column scan line, horizontal scanning line pin, column scan wire pin, and the thin-film transistor that is connected with the column scan line with horizontal scanning line, described manufacture method may further comprise the steps: A. draws the thin film transistor (TFT) array pattern that the scan line pin can be arranged on surface of plate glass manufacturing array four limits at the mask set plate; B., the thin film transistor (TFT) array that the scan line pin is arranged on surface of plate glass manufacturing array four limits according to steps A draw a design; C. according to the testing result whether bad point is arranged in the array, the thin film transistor (TFT) array of step B manufacturing is cut into the larger thin film transistor (TFT) array of area or is divided into the less thin film transistor (TFT) array of several areas.
According to the further feature of the manufacture method of thin film transistor (TFT) array of the present invention, described scan line pin has the multilayer arrangement mode, so that selects different pins combinations to cooperate with drive circuit.
Further feature according to the manufacture method of thin film transistor (TFT) array of the present invention, the mask plate that steps A adopts is the mask plate with gray scale, make the thin film transistor (TFT) array of a kind of specification and area among the step B with a kind of exposure intensity, make the thin film transistor (TFT) array of another kind of specification and area with another kind of exposure intensity.
According to the further feature of the manufacture method of thin film transistor (TFT) array of the present invention, in step B, a thin film transistor (TFT) array mask plate is done the bar shaped shading, produce the thin film transistor (TFT) array before specification and area are different from shading after the shading.
According to the further feature of the manufacture method of thin film transistor (TFT) array of the present invention, thin film transistor (TFT) array four scan edge wire pins all are connected to drive circuit.
The present invention also provides a kind of manufacture method of liquid crystal panel, has comprised the as described in the present invention manufacture method of thin film transistor (TFT) array.
Compare with existing tft array manufacture method, the manufacture method of tft array of the present invention has following advantage:
(1) the less tft array of larger area and production quantity can with than small size and the large tft array sharing production line of production quantity uninterruptedly produce, improved larger area and the production efficiency of the less tft array of production quantity.
(2) when in the larger area tft array bad point of unrepairable being arranged, the larger area tft array can be cut into the small size tft array, thereby reduce the fraction defective of larger area tft array panel.
(3) draw the lead-foot-line of row, column scan line from four limits of tft array, can make scan line resistance drop by half by the method that bilateral accesses drive circuit.Therefore, can use than small size tft array panel technique, material and make larger area tft array panel, lower thus the large tracts of land panel cost.
(4) pin of row, column scan line can have the multilayer arrangement mode, selects the pin arrangements mode by cutting or engraving method, makes things convenient for panel to use.
Description of drawings
Fig. 1 is the tft array structural representation that the present invention makes the principle explanation.
Fig. 2 is that the present invention makes described 8 * 8 * 4 tft array manufacturing of principle schematic diagram.
Fig. 3 is the gray scale mask plate tft array schematic diagram that has of the present invention.
Wherein: 1 is outer column scan wire pin; 2 is internal layer column scan wire pin; 3 is the horizontal scanning line pin; 4 is TFT; 5 is line of cut; 6 mask plate gray scale/shading regions.
Embodiment
Fig. 1 is used for the tft array structural representation that the present invention makes the principle explanation, has 18 * 18 thin-film transistors in the array, and there is row and column scan line pin on 4 limits of array.The manufacture method of this tft array may further comprise the steps: A. draws the thin film transistor (TFT) array pattern that the scan line pin can be arranged on surface of plate glass manufacturing array four limits at the mask set plate; B., the thin film transistor (TFT) array that the scan line pin is arranged on surface of plate glass manufacturing array four limits according to steps A draw a design; C. as required the thin film transistor (TFT) array of step B manufacturing is cut into the product of different size and area, for example, if use inboard pin, can obtains 18 * 18 tft array; If use outside pin, can obtain 16 * 16 tft array; Again for example, cut 18 * 18 tft array along line of cut shown in Figure 2, can obtain 48 * 8 tft array.
On this basis, can adopt a cover that the mask plate of gray scale is arranged, at the exposing patterns of glass surface as shown in Figure 3, therefore, can make a larger area tft array with highlight exposure behind the alignment; Make four tft array than small size with low light level exposure.
Alternately, the mask set plate is done the bar shaped shading, at the exposing patterns of glass surface also as shown in Figure 3, therefore, can make a larger area tft array before the shading behind the alignment; Can make four after the shading than the tft array of small size.
Embodiment one: make 32 inch and 65 inch liquid crystal television panels
At present, the 6th generation the liquid crystal panel production line can make 8 32 inch panels at a slice glass substrate, each sheet panel comprises the array of 3 * 1366 * 768 TFT.Adopt tft array manufacture method of the present invention, draw the array of two 3 * 2772 * 1560 TFT and the thin film transistor (TFT) array pattern that there is the scan line pin on four limits at the mask set plate.Behind the operation finished surface board manufacturing process, without bad point, can obtain two 65 inch panels such as panel routinely.Such as panel bad point is arranged, panel can be pressed the encapsulation of Fig. 2 pattern, at this moment, a slice 65 inch panels are packaged into 4 32 inch panels.If bad point appears in 32 inch panel zones, also can obtain 3 32 inch panels after the cutting.If a slice 65 inch panels without bad point, also can obtain 4 32 inch panels after being packaged into 4 32 inch panels by Fig. 2 pattern after the cutting, therefore, manufacture method of the present invention can significantly improve the yield of 65 inch panels.
Every production line annual production of 32 inch liquid crystal panels surpasses millions of on the market, and unit price is not higher than 1,000 yuan, 65 inch liquid crystal panel annual requirements＜100,000, and unit price is not less than 10,000 yuans.Adopt the present invention to make 65 inch panels, the production because 65 inch panels needn't be started shooting separately, and yield is not less than 32 inch panel yields, so the unit price of resulting 65 inch panels is near 4 32 inch liquid crystal panel price sums, far below present market price.
Embodiment two: make 55 inch and 111 inch liquid crystal television panels:
At present, the 8.5th generation the liquid crystal panel production line can make 8 55 inch panels at a slice glass substrate, each sheet panel comprises the array of 3 * 1920 * 1080 TFT.Adopt tft array manufacture method of the present invention, draw the array of 23 * 3880 * 2184 TFT at the mask set plate, there is the thin film transistor (TFT) array pattern of scan line pin on four limits, routinely behind the operation finished surface board manufacturing process, without bad point, can obtain two 111 inch panels such as panel.Such as panel bad point is arranged, panel can be pressed the encapsulation of Fig. 2 pattern, at this moment, a slice 111 inch panels are packaged into 4 55 inch panels, if bad point appears in 55 inch panel zones, also can obtain 3 55 inch panels after the cutting.A slice 111 inch panels are packaged into 4 55 inch panels by Fig. 2 pattern, if without bad point, also can obtain 4 55 inch panels after the cutting, and therefore, the present invention can greatly improve the yield of 111 inch panels.Because the rank scanning line is long in the 111 inch panels, with 55 inch panel techniques, material manufacturing, signal delay will appear in one-sided input scan signal.Two bilateral input scan signals can make scan line resistance drop by half, just in time satisfy and make 111 inch panel requirements with 55 inch techniques, material.
55 inch liquid crystal panel market annual requirements are nearly 1,000,000 on the market, and the panel unit price is not higher than 5,000 yuans.111 inch liquid crystal appear on the market an annual requirement less than 10,000, and unit price is not less than 100,000 yuans.Adopt the present invention to make 111 inch panels, the production because 111 inch panel panels needn't be started shooting separately, production efficiency raising and yield are not less than the yield of 55 inch panels, can adopt again technique, the material manufacturing of 55 inch panels, so the unit price of resulting 111 inch panels is near 4 55 inch liquid crystal panel price sums, far below present market price.
Claims (7)
1. the manufacture method of a thin film transistor (TFT) array, described thin film transistor (TFT) array comprises: the horizontal scanning line that intersects in length and breadth and column scan line, horizontal scanning line pin, column scan wire pin, and with horizontal scanning line and the thin-film transistor that the column scan line is connected, it is characterized in that: described manufacture method may further comprise the steps:
A. draw the thin film transistor (TFT) array pattern that the scan line pin can be arranged on surface of plate glass manufacturing array four limits at the mask set plate;
B., the thin film transistor (TFT) array that the scan line pin is arranged on surface of plate glass manufacturing array four limits according to steps A draw a design;
C. as required the thin film transistor (TFT) array of step B manufacturing is cut into the larger thin film transistor (TFT) array of area or be divided into the less thin film transistor (TFT) array of several areas.
2. the manufacture method of a thin film transistor (TFT) array, described thin film transistor (TFT) array comprises: the horizontal scanning line that intersects in length and breadth and column scan line, horizontal scanning line pin, column scan wire pin, and with horizontal scanning line and the thin-film transistor that the column scan line is connected, it is characterized in that: described manufacture method may further comprise the steps:
A. draw the thin film transistor (TFT) array pattern that the scan line pin can be arranged on surface of plate glass manufacturing array four limits at the mask set plate;
B., the thin film transistor (TFT) array that the scan line pin is arranged on surface of plate glass manufacturing array four limits according to steps A draw a design;
C. according to the testing result whether bad point is arranged in the array, the thin film transistor (TFT) array of step B manufacturing is cut into the larger thin film transistor (TFT) array of area or is divided into the less thin film transistor (TFT) array of several areas.
3. the manufacture method of thin film transistor (TFT) array according to claim 1 and 2, it is characterized in that: described scan line pin has the multilayer arrangement mode, so that selects different pins combinations to cooperate with drive circuit.
4. the manufacture method of thin film transistor (TFT) array according to claim 1 and 2, it is characterized in that: the mask plate that described steps A adopts is the mask plate with gray scale, make the thin film transistor (TFT) array of a kind of specification and area among the described step B with a kind of exposure intensity, make the thin film transistor (TFT) array of another kind of specification and area with another kind of exposure intensity.
5. the manufacture method of thin film transistor (TFT) array according to claim 1 and 2, it is characterized in that: in step B, a thin film transistor (TFT) array mask plate is done the bar shaped shading, produce the thin film transistor (TFT) array before specification and area are different from shading after the shading.
6. the manufacture method of thin film transistor (TFT) array according to claim 1 and 2, it is characterized in that: thin film transistor (TFT) array four scan edge wire pins all are connected to drive circuit.
7. the manufacture method of a liquid crystal panel is characterized in that comprising the manufacture method of thin film transistor (TFT) array as claimed in claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210220755 CN102891105A (en) | 2011-07-20 | 2012-06-29 | Manufacture method of thin film transistor array |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102033665A CN102420182A (en) | 2011-07-20 | 2011-07-20 | Manufacturing method of thin film transistor array |
| CN201110203366.5 | 2011-07-20 | ||
| CN 201210220755 CN102891105A (en) | 2011-07-20 | 2012-06-29 | Manufacture method of thin film transistor array |
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| CN102891105A true CN102891105A (en) | 2013-01-23 |
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| CN2011102033665A Pending CN102420182A (en) | 2011-07-20 | 2011-07-20 | Manufacturing method of thin film transistor array |
| CN 201210220755 Pending CN102891105A (en) | 2011-07-20 | 2012-06-29 | Manufacture method of thin film transistor array |
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| CN2011102033665A Pending CN102420182A (en) | 2011-07-20 | 2011-07-20 | Manufacturing method of thin film transistor array |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106896536A (en) * | 2017-01-24 | 2017-06-27 | 北海星沅电子科技有限公司 | A kind of liquid crystal display panel cutting method |
| CN107957645A (en) * | 2016-10-14 | 2018-04-24 | 瀚宇彩晶股份有限公司 | Display panel and its production method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292111B (en) * | 2016-10-20 | 2019-08-20 | 深圳市华星光电技术有限公司 | A kind of array substrate and liquid crystal display panel |
-
2011
- 2011-07-20 CN CN2011102033665A patent/CN102420182A/en active Pending
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2012
- 2012-06-29 CN CN 201210220755 patent/CN102891105A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107957645A (en) * | 2016-10-14 | 2018-04-24 | 瀚宇彩晶股份有限公司 | Display panel and its production method |
| CN106896536A (en) * | 2017-01-24 | 2017-06-27 | 北海星沅电子科技有限公司 | A kind of liquid crystal display panel cutting method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102420182A (en) | 2012-04-18 |
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Application publication date: 20130123 |