CN102890430A - Device and method for adjusting power uniformity of exposure surface of direct-writing exposure machine - Google Patents
Device and method for adjusting power uniformity of exposure surface of direct-writing exposure machine Download PDFInfo
- Publication number
- CN102890430A CN102890430A CN2012103501493A CN201210350149A CN102890430A CN 102890430 A CN102890430 A CN 102890430A CN 2012103501493 A CN2012103501493 A CN 2012103501493A CN 201210350149 A CN201210350149 A CN 201210350149A CN 102890430 A CN102890430 A CN 102890430A
- Authority
- CN
- China
- Prior art keywords
- exposure
- power
- plane
- pattern generator
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a device and a method for adjusting power uniformity of an exposure surface of a direct-writing exposure machine. The device comprises an exposure light source, wherein a reflector is obliquely arranged on an optical path on the front side of the exposure light source, an optical lens group and a pattern generator are arranged on an optical reflection path of the reflector in sequence, a projection lens and a power probe are arranged below the pattern generator in sequence, and a signal output end of the power probe is connected with a power display; and a programmable pattern generator is divided into a plurality of small areas with same area, a white pattern is projected into each of the small areas, corresponding power values are tested, the power uniformity of the exposure surface of the direct-writing exposure machine can be acquired through calculation, and if the power uniformity of the exposure surface is unsatisfactory, the reflector in an illumination module can be adjusted for improvement. By adopting the device and the method, quality of an exposure pattern, in particular line width consistency of the exposure pattern, can be greatly improved.
Description
Technical field
The present invention relates to the detection technique field of printed circuit board devices, be specially a kind of exposure machine of directly writing and adjust the inhomogeneity device and method of plane of exposure power.
Background technology
For the printed circuit board (PCB) manufacture field, especially in the manufacturing of high precision HDI plate and base plate for packaging, the quality of exposure figure, especially the consistance of exposure figure live width is extremely important.
At present the printed circuit board (PCB) exposure sources has two large classes: traditional projection exposure equipment and directly write exposure sources.Traditional projection exposure equipment figure has been printed on the film egative film, by the projection film egative film figure is transferred on the photosensitive dry film; An other class is directly to write exposure sources, and light beam on photosensitive dry film, is directly write the direct scanning imagery of exposure figure in the exposure sources, and wherein the conversion from the CAM data to laser graphics is generally finished by programmable pattern generator.Directly write exposure sources and compare with traditional projection exposure equipment, the technical advantage of following uniqueness is arranged:
(1) directly writing exposure technique begins only to need four steps till the development of photoresist from the PCB of CAM design.And traditional projection exposure equipment generally needs more than ten step because need egative film transition diagram picture.Therefore directly write exposure technique so that technique saves 60%;
(2) owing to the scale error that does not exist egative film to cause, directly write exposure technique and can significantly improve the position degree of figure and the contraposition degree of interlayer figure;
(3) have higher graphical analysis degree, be fit to the making of fine wire;
(4) have fast reaction capacity, with short production cycle, be specially adapted to technical complexity, less P.e.c. panel products in batches, and can promote the production yield of printed circuit board (PCB).Help enterprise saves production cost and improves rate of return on investment.
In sum, directly write exposure sources because its unique technical advantage has obtained significant progress in recent years.The core component of directly writing exposure sources is projection imaging system, and wherein programmable pattern generator is responsible for graphic projection to printed circuit board (PCB).The quality of exposure figure on the printed circuit board (PCB), especially the consistance of exposure figure live width directly depends on the homogeneity of plane of exposure power, therefore, adjustment is directly write exposure machine plane of exposure power homogeneity and is just seemed particularly important.
Summary of the invention
The object of the present invention is to provide a kind of exposure machine of directly writing to adjust the inhomogeneity device and method of plane of exposure power.
The technical solution adopted in the present invention is:
A kind of exposure machine of directly writing is adjusted the inhomogeneity device of plane of exposure power, it is characterized in that, mainly include three modules, be respectively lighting module, the projection exposure module, the power detecting module, lighting module includes exposure light source, optical lens group and a reflective mirror, the projection exposure module includes programmable pattern generator and projection lens, the power detecting module includes power probe and power display, reflective mirror is inclined on the place ahead light path of exposure light source, set gradually optical lens group on the reflected light path of reflective mirror, pattern generator, the below of pattern generator sets gradually projection lens, power probe, the signal output part of power probe is connected with power display.
Described exposure light source is laser instrument or mercury lamp.
Described reflective mirror can translation and pitching adjustable, its effect is to change position and the angle of illumination hot spot on programmable pattern generator.
Described programmable pattern generator is the space micro reflector array.
Method based on directly writing the inhomogeneity device of exposure machine adjustment plane of exposure power is characterized in that, comprises following steps:
(1) opens exposure light source;
(2) programmable pattern generator is divided into axb of homalographic zone, schemes in vain in each zonule projection of programmable pattern generator respectively, white figure is resolution chart;
(3) record respectively performance number W1 corresponding to each resolution chart, W2, W3 ... Wn, wherein, the maximal value of power is designated as Wmax, and the maximal value of power is designated as Wmin, and the power homogeneity U of plane of exposure is (Wmax-Wmin)/(Wmax+Wmin);
(4) if the power homogeneity U of plane of exposure does not meet index, then reflective mirror is adjusted in translation or pitching;
(5) repeating step (1)-(4) are until the power homogeneity U of plane of exposure meets index.
Advantage of the present invention is:
The invention enables the quality of exposure figure, especially the consistency of line width of exposure figure is greatly improved.
Description of drawings
Fig. 1 is a kind of illustraton of model that exposure machine is adjusted plane of exposure power homogeneity device of directly writing of the present invention;
The planimetric map of Fig. 2 programmable graphics generator.
Embodiment
A kind of exposure machine of directly writing is adjusted the inhomogeneity device of plane of exposure power as shown in Figure 1, mainly include three modules, be respectively lighting module, the projection exposure module, the power detecting module, lighting module includes exposure light source 1, optical lens group 3 and a reflective mirror 2, the projection exposure module includes programmable pattern generator 4 and projection lens 5, the power detecting module includes power probe 6 and power display 7, reflective mirror 2 is inclined on the place ahead light path of exposure light source 1, set gradually optical lens group 3 on the reflected light path of reflective mirror 2, pattern generator 4, the below of pattern generator 4 sets gradually projection lens 5, power probe 6, the signal output part of power probe 6 is connected with power display 7.
A kind of exposure machine of directly writing is adjusted the inhomogeneity method of plane of exposure power, comprises following step:
(1) opens exposure light source;
(2) plane Figure 41 of programmable pattern generator 4 as shown in Figure 2, micro reflector array laterally has 1920 pixels, 1080 pixels are vertically arranged, each micro-reflector size is 10.8um, it is divided into 16x9 zonule of homalographic, laterally there are 120 pixels each zonule, and 120 pixels are vertically arranged, and schemes in vain (411) in each zonule successively projection;
(3) record respectively every performance number W1 corresponding to white figure, W2, W3, W144(wherein, the maximal value of power is designated as Wmax, the maximal value of power is designated as Wmin), the power homogeneity U of plane of exposure is (Wmax-Wmin)/(Wmax+Wmin), and its empirical value is 5%;
(4) if the power homogeneity U of plane of exposure does not meet index 5%, need translation or pitching to adjust anti-mirror;
(5) repeating step (1)-(4) are until the power homogeneity U of plane of exposure meets index.
Claims (5)
1. directly write the inhomogeneity device of exposure machine adjustment plane of exposure power for one kind, it is characterized in that, mainly include three modules, be respectively lighting module, the projection exposure module, the power detecting module, lighting module includes exposure light source, optical lens group and a reflective mirror, the projection exposure module includes programmable pattern generator and projection lens, the power detecting module includes power probe and power display, reflective mirror is inclined on the place ahead light path of exposure light source, set gradually optical lens group on the reflected light path of reflective mirror, pattern generator, the below of pattern generator sets gradually projection lens, power probe, the signal output part of power probe is connected with power display.
2. adjust the inhomogeneity device of plane of exposure power according to claims 1 described a kind of exposure machine of directly writing, it is characterized in that, described exposure light source is laser instrument or mercury lamp.
3. adjust the inhomogeneity device of plane of exposure power according to the described a kind of exposure machine of directly writing of claims 1, it is characterized in that, described reflective mirror can translation and pitching adjustable.
4. adjust the inhomogeneity device of plane of exposure power according to claims 1 described a kind of exposure machine of directly writing, it is characterized in that, described programmable pattern generator is the space micro reflector array.
5. based on claims 1 described method of directly writing the inhomogeneity device of exposure machine adjustment plane of exposure power, it is characterized in that, comprise following steps:
(1) opens exposure light source;
(2) programmable pattern generator is divided into axb of homalographic zone, schemes in vain in each zonule projection of programmable pattern generator respectively, white figure is resolution chart;
(3) record respectively performance number W1 corresponding to each resolution chart, W2, W3 ... Wn, wherein, the maximal value of power is designated as Wmax, and the maximal value of power is designated as Wmin, and the power homogeneity U of plane of exposure is (Wmax-Wmin)/(Wmax+Wmin);
(4) if the power homogeneity U of plane of exposure does not meet index, then reflective mirror is adjusted in translation or pitching;
(5) repeating step (1)-(4) are until the power homogeneity U of plane of exposure meets index.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210350149.3A CN102890430B (en) | 2012-09-18 | 2012-09-18 | A kind of device and method directly writing exposure machine adjustment plane of exposure Power uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210350149.3A CN102890430B (en) | 2012-09-18 | 2012-09-18 | A kind of device and method directly writing exposure machine adjustment plane of exposure Power uniformity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102890430A true CN102890430A (en) | 2013-01-23 |
| CN102890430B CN102890430B (en) | 2015-09-09 |
Family
ID=47533971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210350149.3A Active CN102890430B (en) | 2012-09-18 | 2012-09-18 | A kind of device and method directly writing exposure machine adjustment plane of exposure Power uniformity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102890430B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105319858A (en) * | 2014-07-29 | 2016-02-10 | 上海微电子装备有限公司 | Illumination test apparatus and test method for illumination uniformity and stray light |
| CN105446086A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Illumination uniformity measuring method in photolithography system |
| CN106064476A (en) * | 2016-05-31 | 2016-11-02 | 北京闻亭泰科技术发展有限公司 | A kind of adjusting apparatus based on 3D printer and method |
| CN106325004A (en) * | 2016-08-26 | 2017-01-11 | 广州兴森快捷电路科技有限公司 | Energy uniformity detection method of LDI exposure machine |
| CN106990676A (en) * | 2017-03-07 | 2017-07-28 | 无锡影速半导体科技有限公司 | The method for realizing laser direct imaging pattern uniformity |
| CN111025859A (en) * | 2019-12-30 | 2020-04-17 | 苏州源卓光电科技有限公司 | Exposure machine and energy detection method and device thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564053A (en) * | 2004-04-16 | 2005-01-12 | 南昌航空工业学院 | High solution digital microoptical grey mask prodn. system and its prodn, method |
| CN1786823A (en) * | 2005-11-17 | 2006-06-14 | 苏州大学 | Method for mfg. achromatic light variation image |
| CN1952789A (en) * | 2006-11-03 | 2007-04-25 | 哈尔滨工业大学 | Direct write-in method and apparatus of parallel laser based on harmonic resonance method |
| CN101093360A (en) * | 2007-05-29 | 2007-12-26 | 芯硕半导体（合肥）有限公司 | Phase control and compensation process of digital optical lithography |
| CN101231475A (en) * | 2008-02-27 | 2008-07-30 | 芯硕半导体（中国）有限公司 | Exposure system of photo-etching machine |
| CN101813893A (en) * | 2010-04-07 | 2010-08-25 | 芯硕半导体（中国）有限公司 | Method for calibrating exposure energy demand distribution by adopting exposure mode |
| CN102621816A (en) * | 2012-02-29 | 2012-08-01 | 合肥芯硕半导体有限公司 | Method of adopting gray scale mode in write-through photoetching system to improve exposure graph quality |
-
2012
- 2012-09-18 CN CN201210350149.3A patent/CN102890430B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564053A (en) * | 2004-04-16 | 2005-01-12 | 南昌航空工业学院 | High solution digital microoptical grey mask prodn. system and its prodn, method |
| CN1786823A (en) * | 2005-11-17 | 2006-06-14 | 苏州大学 | Method for mfg. achromatic light variation image |
| CN1952789A (en) * | 2006-11-03 | 2007-04-25 | 哈尔滨工业大学 | Direct write-in method and apparatus of parallel laser based on harmonic resonance method |
| CN101093360A (en) * | 2007-05-29 | 2007-12-26 | 芯硕半导体（合肥）有限公司 | Phase control and compensation process of digital optical lithography |
| CN101231475A (en) * | 2008-02-27 | 2008-07-30 | 芯硕半导体（中国）有限公司 | Exposure system of photo-etching machine |
| CN101813893A (en) * | 2010-04-07 | 2010-08-25 | 芯硕半导体（中国）有限公司 | Method for calibrating exposure energy demand distribution by adopting exposure mode |
| CN102621816A (en) * | 2012-02-29 | 2012-08-01 | 合肥芯硕半导体有限公司 | Method of adopting gray scale mode in write-through photoetching system to improve exposure graph quality |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105319858A (en) * | 2014-07-29 | 2016-02-10 | 上海微电子装备有限公司 | Illumination test apparatus and test method for illumination uniformity and stray light |
| CN105446086A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Illumination uniformity measuring method in photolithography system |
| CN106064476A (en) * | 2016-05-31 | 2016-11-02 | 北京闻亭泰科技术发展有限公司 | A kind of adjusting apparatus based on 3D printer and method |
| CN106064476B (en) * | 2016-05-31 | 2018-08-14 | 北京闻亭泰科技术发展有限公司 | A kind of adjusting apparatus and method based on 3D printer |
| CN106325004A (en) * | 2016-08-26 | 2017-01-11 | 广州兴森快捷电路科技有限公司 | Energy uniformity detection method of LDI exposure machine |
| CN106325004B (en) * | 2016-08-26 | 2018-01-30 | 广州兴森快捷电路科技有限公司 | LDI exposure machine energy uniformity detection methods |
| CN106990676A (en) * | 2017-03-07 | 2017-07-28 | 无锡影速半导体科技有限公司 | The method for realizing laser direct imaging pattern uniformity |
| CN106990676B (en) * | 2017-03-07 | 2019-03-29 | 无锡影速半导体科技有限公司 | The method for realizing laser direct imaging pattern uniformity |
| CN111025859A (en) * | 2019-12-30 | 2020-04-17 | 苏州源卓光电科技有限公司 | Exposure machine and energy detection method and device thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102890430B (en) | 2015-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102890430B (en) | A kind of device and method directly writing exposure machine adjustment plane of exposure Power uniformity | |
| CN101807012B (en) | Automatic focus light path structure of direct-write lithography machine | |
| CN209297103U (en) | Digitize dual surface lithography or exposure system | |
| US20120133920A1 (en) | High speed, high resolution, three dimensional printed circuit board inspection system | |
| CN105466889B (en) | The acquisition method of complex organization's body surface face illuminance in a kind of spatial frequency domain imaging | |
| CN205246014U (en) | Structured light projection -based high -speed three -dimensional measurement system | |
| CN207096106U (en) | A kind of parallel confocal microscopic imaging device based on digital micromirror array | |
| CN113126449A (en) | Laser direct-writing photoetching system and method for green oil photoetching | |
| TW201737402A (en) | Coaxial mask alignment device, photolithography apparatus and alignment method | |
| CN104375384A (en) | Exposure method and exposure device | |
| JP4258013B2 (en) | Multiple exposure drawing apparatus and multiple exposure drawing method | |
| CN108683908B (en) | Multifunctional calibration device | |
| CN201083959Y (en) | Integrated type direct-writing lithographic equipment | |
| KR102216999B1 (en) | Non-Lambertian Surface Inspecting System For Line Scan | |
| CN108062003A (en) | A kind of write-through screen printing system and method for platemaking | |
| US11326874B2 (en) | Structured light projection optical system for obtaining 3D data of object surface | |
| CN201083960Y (en) | Direct-writing lithographic equipment | |
| CN103383531A (en) | Mask alignment device and photoetching device using same | |
| CN202472238U (en) | Light energy monitoring system for lithography system | |
| CN102639989B (en) | High speed optical inspection system with adaptive focusing | |
| CN103226294A (en) | Lithography system and method for improving exposure pattern position accuracy | |
| CN114543706A (en) | Differential light line-cutting and profile-scanning technique based on incoherent light source multi-angle projection | |
| TWI710007B (en) | Lithography apparatus and method to perform micro light emitting diode lithography | |
| KR20180040316A (en) | 3D optical scanner | |
| CN103969956B (en) | Exposure apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |