CN102881725A - Metal oxide semiconductor (MOS) tube, manufacture method thereof and application of MOS tube in battery protection circuit - Google Patents
Metal oxide semiconductor (MOS) tube, manufacture method thereof and application of MOS tube in battery protection circuit Download PDFInfo
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- CN102881725A CN102881725A CN201210369459XA CN201210369459A CN102881725A CN 102881725 A CN102881725 A CN 102881725A CN 201210369459X A CN201210369459X A CN 201210369459XA CN 201210369459 A CN201210369459 A CN 201210369459A CN 102881725 A CN102881725 A CN 102881725A
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Abstract
The invention provides a metal oxide semiconductor (MOS) tube, a manufacture method thereof and application of the MOS tube in a battery protection circuit. The battery protection circuit comprises a battery protection control circuit and the MOS tube, wherein a first electrode of the MOS tube is connected with a negative electrode of a battery, a second electrode is connected with a second power supply end, and a positive electrode of the battery is connected with the first power supply end. The battery protection control circuit comprises a power switch control circuit and a lining selecting circuit, wherein the power switch control circuit is used for detecting a charging state and a discharging state of the battery so as to generate a drive signal to a grid electrode of the MOS tube. The lining selecting circuit is connected with a lining of the MOS tube and used for being connected to one low-voltage end of the first electrode and the second electrode. Compared with the prior art, the MOS tube serves as a power switch in the battery protection circuit, the layout area of the power switch can be saved, accordingly the area of a chip is decreased, and the chip cost is further reduced.
Description
[technical field]
The present invention relates to semiconductor applications, particularly a kind of metal-oxide-semiconductor and manufacture method thereof and the application of this metal-oxide-semiconductor in battery protecting circuit.
[background technology]
Along with integrated degree is more and more higher, some producer adopts system in package technology (SIP:System in Package) to make battery protection chip at present.Concrete grammar is that battery protection control chip and power switch are encapsulated in the same encapsulation, for example SOT23-6 encapsulation or TSSOP-8 encapsulation or DFN-6 encapsulation.And the battery protection control chip adopts different semiconductor technology manufacturings with power switch, and special-purpose technique helps to optimize respectively the processing step of each technique, so that lithography step is as far as possible few, thereby the time of processing is short, and then reduces production cost.
Please refer to shown in Figure 1ly, it is the circuit diagram of battery protecting circuit in the prior art.Described battery protecting circuit comprises battery protection control chip 110 and power switch 120.Described battery protecting circuit and battery BAT are electrically connected and the charging and discharging of described battery BAT are protected.
Described battery protection control chip 110 and power switch 120 can adopt sip technique to be encapsulated in the encapsulation.The positive pole of described battery BAT links to each other with the first power end VDD.Described power switch 120 is connected between the negative pole G and second source end VM of battery BAT.Battery charger 130 or load resistance Ro can be connected between the first power end VDD and the second source end VM.When load resistance Ro was connected between the first power end VDD and the second source end VM, described battery BAT was in discharge condition, and when battery charger 130 just had been connected between the first power end VDD and the second source end VM, described battery BAT was in charged state.
Described battery protection control chip 110 comprises the testing circuit 112 that overcharges, charging over-current detection circuit 114, overdischarge testing circuit 116, discharge over-current detection circuit 118 and control circuit 119.The described testing circuit 112 that overcharges, charging over-current detection circuit 114, overdischarge testing circuit 116 and discharge over-current detection circuit 118 can be collectively referred to as threshold detection circuit.The detection signal that described control circuit 119 provides according to charging detecting circuit 112, charging over-current detection circuit 114, overdischarge testing circuit 116 and discharge over-current detection circuit 118 generates charging control signal also by charging control signal output CO1 output, generates discharge control signal and passes through discharge control signal output DO1 output.
Described power switch 120 comprises a NMOS (N-channel Metal-Oxide-Semiconductor, N-type metal-oxide semiconductor (MOS)) transistor and second nmos pass transistor of successively series connection.The drain electrode of the drain electrode of described the first nmos pass transistor and described the second nmos pass transistor links to each other to form mutual connection end K, is connected in series thereby form; The source electrode of described the first nmos pass transistor links to each other with the lining body, and as the first link A of described power switch 120, the source electrode of described the second nmos pass transistor links to each other with the lining body, as the second link B of described power switch 120; The grid of described the first nmos pass transistor is as the control of discharge end DO2 of described power switch 120, and the grid of described the second nmos pass transistor is as the charging control end CO2 of described power switch 120.
When adopting the system in package technology that battery protection control chip 110 and power switch 120 are encapsulated, the earth terminal GND of battery protection control chip 110 and the first link A end of power switch 120 are connected on the same pin of encapsulation by gold thread or copper cash, thereby electrical connection together; The test side VMI of battery protection control chip 110 and the second link B end of power switch 120 are connected on the same pin of encapsulation by gold thread or copper cash, thereby electrical connection together; By gold thread or copper cash the discharge control signal output DO1 of battery protection control chip 110 and the control of discharge end DO2 of power switch 120 are linked together; By gold thread or copper cash the charging control signal output CO1 of battery protection control chip 110 and the charging control end CO2 of power switch 120 are linked together; The first power end VDD of battery protection control chip 110 is connected to separately on the other pin of encapsulation.
Please refer to shown in Figure 2ly, it is the structural representation of power switch 120 among Fig. 1.The left side is the first nmos pass transistor, and the right is the second nmos pass transistor, and a wherein end of the first nmos pass transistor and the second nmos pass transistor shares, and is connected in series thereby form.Traditional power switch all is three terminal device, i.e. A end, B end and G end, and the lining body links together all the time with a wherein end in source electrode and the drain electrode, when carrying out the power switch design, only needs consideration the withstand voltage of side a and b to get final product.As shown in Figure 2, this nmos pass transistor is vertical stratification.During conducting, its electric current flows perpendicular to the direction of wafer surface, and electric current can flow to mutual connection end K end from the first link A end, then flows to the second link B end.Its tolerating high voltage all is K end with respect to A end or B end, and is lower by P-and N-(-number expression doping content) two doped regions realize tolerating high voltage.N+ and P+(+ number the expression doping content is higher) be used to form the ohmic contact less with Metal Contact resistance.P+ forms the lining body contact of nmos pass transistor, because lining body P+ links together (it is identical namely to connect current potential) all the time with the N+ electrode of vicinity, in order to reduce area, generally adopts collision type (Butting) design, and namely P+ and N+ abut against together.The oblique line fill area is the grid of nmos pass transistor.When grid voltage surpasses threshold voltage, make and N+ electrode and the regional transoid of the P-between another electrode N-zone that P+ is contiguous, namely attract a lot of electronics to be positioned near gate electrode side, like this that P+ is contiguous N+ electrode has been communicated with the N-electrode, and nmos pass transistor is with regard to conducting like this.
In the battery protecting circuit application, a relatively more crucial problem is problem of withstand voltage.For the described battery protecting circuit of Fig. 1; when the appearance discharge is unusual; when for example detecting the voltage overdischarge or detecting the situation of discharge overcurrent or reversal connection charger 130; battery protection control chip 110 can control turn-off the first nmos pass transistor; at this moment, the first nmos pass transistor will bear larger high pressure.When ceiling voltage occurs in charger 130 reversal connection, this moment, the first nmos pass transistor with the voltage that bears was | VCHG|+|VBAT|+|VL|, wherein VCHG is charger voltage, and VBAT is the battery core voltage of battery BAT, and VL is the anti-sharp voltage of stray inductance in the current path.The situation that this stray inductance causes power tube to bear high voltage is called as inductive switch (the UIS:Unclamped Inductive Switching) phenomenon of not clamping down on.
Wherein L is the inductance value of stray inductance, and di/dt is curent change speed.
In addition, when detecting voltage and overcharge or charge overcurrent, battery protection control chip 110 can control turn-off the second nmos pass transistor, and the second nmos pass transistor will bear larger high pressure this moment.Its voltage that bears is | VCHG|-|VBAT|+|VL|.
Because power switch 120 comprises successively two metal-oxide-semiconductors of series connection, therefore, its chip area that needs is larger, thereby the area that takies in chip is also larger, and then has improved the cost of chip.Therefore, be necessary to provide a kind of improved technical scheme to overcome the problems referred to above.
[summary of the invention]
The object of the present invention is to provide a kind of metal-oxide-semiconductor and manufacture method thereof and the application of this metal-oxide-semiconductor in battery protecting circuit, it can save the chip area of power switch, thereby reduces the area of chip, and then reduces the cost of chip.
In order to address the above problem, according to an aspect of the present invention, the invention provides a kind of metal-oxide-semiconductor, it comprises the N+ substrate, be formed at the N-layer of N+ substrate top, be formed at the P-layer of N-layer top, extend downward grid in the N-layer from the upper surface of P-layer, half centers on described grid with the grid oxide layer with described gate isolation, extend downward N+ active area in the P-layer from the upper surface of P-layer, extend downward P+ active area in the P-layer with the upper surface from the P-layer of described N+ active area space, P+ represents the heavy doping of P type, P-represents P type light dope, N+ represents N-type heavy doping, and N-represents the N-type light dope, and the N+ active area forms the first electrode of described metal-oxide-semiconductor, the N+ substrate forms the second electrode of described metal-oxide-semiconductor, and the P+ active area forms the lining body of described metal-oxide-semiconductor.
Further, described N+ active area is close to described grid oxide layer or described N+ active area and described grid oxide layer space.
Further, the upper surface of described grid is exposed to outside the described grid oxide layer, and described grid oxide layer is U-shaped, and the P+ active area further from described grid, all is provided with P+ active area and N+ active area in the both sides of described grid than the N+ active area.
Further, described metal-oxide-semiconductor also comprises the NG layer between described P-layer and described N+ active area, and the more described N+ active area of the doping content of this NG layer is low, and NG represents to mix in the N-type.
According to another aspect of the present invention, the invention provides a kind of manufacture method of metal-oxide-semiconductor, it comprises the steps: to form the N-epitaxial loayer by deposit on the N+ substrate, then forms the P-epitaxial loayer by deposit; Through over etching, form and run through the P-layer until the groove in the N-layer; Adopt oxygen to carry out dry oxidation, produce grid oxide layer, again depositing polysilicon; Elder generation's etch polysilicon, etching grid oxide layer again is so that the upper surface of P-layer, polysilicon and grid oxide layer is concordant; Carry out N+ injection and P+ and inject to form described N+ active area and described P+ active area.
According to another aspect of the present invention, the invention provides a kind of manufacture method of metal-oxide-semiconductor, it comprises the steps: to form the N-epitaxial loayer by deposit on the N+ substrate, then forms the P-epitaxial loayer by deposit; Through over etching, form and run through the P-layer until the groove in the N-layer; Adopt oxygen to carry out dry oxidation, produce grid oxide layer, again depositing polysilicon; Elder generation's etch polysilicon, etching grid oxide layer again is so that the upper surface of P-layer, polysilicon and grid oxide layer is concordant; Inject by mask, form the NG layer that is positioned at described grid oxide layer both sides; Carrying out N+ injects and carries out P+ and inject to form described N+ active area and P+ active area.
According to a further aspect of the invention, the invention provides a kind of battery protecting circuit, it comprises battery protection control circuit and a metal-oxide-semiconductor, the first electrode of described metal-oxide-semiconductor links to each other with the negative pole of battery, the second electrode links to each other with the second source end, the positive pole of described battery links to each other with the first power end, described battery protection control circuit comprises power switch control circuit and lining body selection circuit, and described power switch control circuit is used for the charging and discharging state of battery is detected to generate the driving signal to the grid of described metal-oxide-semiconductor; Described lining body selects circuit to link to each other with the lining body of described metal-oxide-semiconductor, is used for described lining body optionally is connected in the first electrode and the lower end of the second electrode voltage.
Further, described lining body is selected circuit to include the voltage decision circuitry and is connected commutation circuit, described voltage decision circuitry compares the voltage of the first electrode and the voltage of the second electrode, when the voltage of the first electrode is higher than the voltage of the second electrode, notify described connection commutation circuit that described lining body is connected to the second electrode, when the voltage of the first electrode is lower than the voltage of the second electrode, notify described connection commutation circuit that described lining body is connected to the first electrode.
Further, described power switch control circuit comprises threshold detection circuit, control circuit, drive circuit and charge pump, and described threshold detection circuit is used for the charging and discharging state of battery is detected to generate detection signal; Described control circuit generates corresponding control signal according to the detection signal of described threshold detection circuit output; Described drive circuit is according to the grid of described control signal output drive signal to metal-oxide-semiconductor; Charge pump is used for promoting the supply voltage of drive circuit.
Compared with prior art, the present invention adopts a metal-oxide-semiconductor as the power switch in the battery protecting circuit, and it can save the chip area of power switch, thereby reduces the area of chip, and then reduces the cost of chip.
[description of drawings]
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.Wherein:
Fig. 1 is the circuit diagram of battery protecting circuit of the prior art;
Fig. 2 is the structural representation of power switch among Fig. 1;
Fig. 3 is battery protecting circuit in one embodiment the circuit diagram of the metal-oxide-semiconductor among employing the present invention as power switch;
Fig. 4 is the metal-oxide-semiconductor structural representation in one embodiment among Fig. 3;
Fig. 5 is the metal-oxide-semiconductor structural representation in another embodiment among Fig. 3;
Fig. 6 is the metal-oxide-semiconductor structural representation in another embodiment among Fig. 3;
Fig. 7 a-7e is the metal-oxide-semiconductor process drawing in one embodiment among Fig. 4; With
Fig. 8 a-8c is the metal-oxide-semiconductor process drawing in another embodiment of Fig. 6.
[embodiment]
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Alleged " embodiment " or " embodiment " refer to be contained in special characteristic, structure or the characteristic at least one implementation of the present invention herein.Different local in this manual " in one embodiment " that occur not are all to refer to same embodiment, neither be independent or the embodiment mutually exclusive with other embodiment optionally.Unless stated otherwise, herein connection, the word that the expression that links to each other, join is electrically connected all represents directly or indirectly to be electrical connected.
The present invention adopts a MOS (Metal Oxide Semiconductor; metal-oxide semiconductor (MOS)) pipe is as the power switch in the battery protecting circuit; in prior art; compare as power switch by two metal-oxide-semiconductors of connecting successively; it can save the chip area of power switch; thereby reduce the area of chip, and then reduce the cost of chip.
Please refer to shown in Figure 3ly, it is for adopting metal-oxide-semiconductor among the present invention as the battery protecting circuit circuit diagram in one embodiment of power switch.Described battery protecting circuit comprises battery protection control circuit 310 and a metal-oxide-semiconductor (also can be referred to as power tube) 320.
The positive pole of battery BAT links to each other with the first power end VDD.
Described metal-oxide-semiconductor 320 comprises the first electrode C1, the second electrode C2, grid C3 and lining body C4, the first electrode C1 links to each other with the negative pole G of battery BAT, the second electrode C2 links to each other with second source end VM, and described lining body C4 can optionally be connected in the first electrode C1 and the second electrode C2.
Described battery protection control circuit 310 comprises that power switch control circuit (among the figure not label) and lining body select circuit 312.
Described power switch control circuit is used for the charging and discharging state of battery is detected to generate the driving signal to the grid C3 of described metal-oxide-semiconductor 320, controls conducting or the cut-off of described metal-oxide-semiconductor.
In the present embodiment, described power switch control circuit comprises threshold detection circuit 314, control circuit 316, drive circuit 318 and charge pump 319.Described threshold detection circuit 314 is used for the charging and discharging state of battery BAT is detected and generate detection signal.Described control circuit 316 generates corresponding control signal according to the detection signal of described threshold detection circuit 314 outputs.Described drive circuit 318 is according to the grid C3 of described control signal output drive signal to metal-oxide-semiconductor 320.Charge pump 319 is used for promoting the supply voltage of drive circuit 318.When metal-oxide-semiconductor 320 conducting, its gate-source voltage is higher than the execution mode that does not have charge pump circuit like this, helps to reduce the conducting resistance of metal-oxide-semiconductor 320.In another embodiment, described power switch control circuit can not comprise described charge pump 318.
Described lining body selects circuit 312 to link to each other with the lining body C4 of described metal-oxide-semiconductor, is used for described lining body C4 optionally is connected in the first electrode C1 and the lower end of the second electrode C2 voltage.Also described lining body selects circuit 312 that described lining body C4 optionally is connected in the lower end of voltage among the 3rd power end G and the second source end VM.In one embodiment, described lining body is selected circuit 312 to include the voltage decision circuitry and is connected commutation circuit, described voltage decision circuitry compares the voltage of the first electrode C1 and the voltage of the second electrode C2, when the voltage of the first electrode C1 is higher than the voltage of the second electrode C2, notify described connection commutation circuit that described lining body C4 is connected to the second electrode C2, when the voltage of the first electrode C1 is lower than the voltage of the second electrode C2, notify described connection commutation circuit that described lining body C4 is connected to the first electrode C1.
When described battery BAT externally discharged, the voltage of the first electrode C1 of described metal-oxide-semiconductor 320 was lower than the second electrode C2, and this moment, described lining body C4 was connected to the first electrode C1.When discharge was normal, described power switch control circuit was controlled described metal-oxide-semiconductor 320 conductings, realized normally discharge, and when discharge was unusual, described power switch control circuit was controlled described metal-oxide-semiconductor 320 cut-offs, realizes discharge prevention.To described battery BAT charging the time, the voltage of the first electrode C1 of described metal-oxide-semiconductor 320 is higher than the second electrode C2, and this moment, described lining body C4 was connected to the second electrode C2.When charging was normal, described power switch control circuit was controlled described metal-oxide-semiconductor 320 conductings, realized normally charging, and when charging was unusual, power switch control circuit was controlled described metal-oxide-semiconductor 320 cut-offs, realizes charge protection.
Like this, utilize a metal-oxide-semiconductor 320 just can realize the charge and discharge protecting of described battery BAT as the power switch of battery protecting circuit.
Please refer to shown in Figure 4ly, it is metal-oxide-semiconductor 320 structural representation in one embodiment among Fig. 3.
Described metal-oxide-semiconductor comprises the N+ substrate, be formed at the N-layer of N+ substrate top, be formed at the P-layer of N-layer top, extend downward grid in the N-layer from the upper surface of P-layer, half centers on described grid with the grid oxide layer with described gate isolation, be close to described grid oxide layer lateral surface and extend downward N+ active area in the P-layer from the upper surface of P-layer, extend downward P+ active area in the P-layer with the upper surface from the P-layer of described N+ active area space, P+ represents the heavy doping of P type, P-represents P type light dope, N+ represents N-type heavy doping, N-represents the N-type light dope, wherein the heavily doped miserable assorted more lightly doped height of concentration.
In addition, the upper surface of described grid is exposed to outside the described grid oxide layer, and described grid oxide layer is U-shaped, and the P+ active area further from described grid, all is provided with P+ active area and N+ active area in the both sides of described grid than the N+ active area.Realize tolerating high voltage by P-layer and two doped regions of N-layer.N+ substrate, N+ active area and P+ active area are used to form the ohmic contact less with Metal Contact resistance.The N+ active area forms described the first electrode C1, and the N+ substrate forms described the second electrode C2, and the P+ active area forms described substrate C4.
Comparison diagram 2 and Fig. 4 as can be known, unlike the prior art be that lining body C4 and the first electrode C1 are not close to placement among the present invention, but have certain distance, improve by this distance to serve as a contrast withstand voltage between body C4 and the first electrode C1.Reason is to be switched when being connected to the second electrode C2 as lining body C4, when occurring turn-offing this metal-oxide-semiconductor, needs certain withstand voltage between lining body C4 and the first electrode C1.
For metal-oxide-semiconductor structure among Fig. 4, the withstand voltage height of withstand voltage ratio the first electrode C1 of the second electrode C2, reason is that the P-N knot of the second electrode C2 is made of P-and N-, and the P-N of the first electrode C1 knot is made of P-and N+.The N-that doping content is lower can provide withstand voltage higher space charge region.
Owing to the requirement of withstand voltage to metal-oxide-semiconductor 320 under the reversal connection charger situation in the battery protecting circuit is the highest; when the reversal connection charger occurs when; the voltage of second source end VM is higher than the voltage of the negative pole G of battery; the voltage of second source end VM with respect to the voltage of the negative pole G of battery is | VBAT|+|VCHG| serves as a contrast body C4 this moment and is switched the negative pole G end that is connected to the lower battery of voltage.Add the anti-sharp voltage that stray inductance produces at metal-oxide-semiconductor 320 shutdown moments, metal-oxide-semiconductor 320 was held at second source end VM and was needed tolerance between the negative pole G of battery this moment | VBAT|+|VCHG|+|VL| voltage, wherein VCHG is charger voltage, VBAT is the battery core voltage of battery, and VL is the anti-sharp voltage of stray inductance in the current path.Therefore, in the preferred embodiment, should be shown in Fig. 3, but the end that withstand voltage is stronger (i.e. the second electrode C2) is connected in second source end VM, and the weak end (i.e. the first electrode C1) of withstand voltage connects and the 3rd power end G.In another embodiment, end that also can but withstand voltage is stronger (i.e. the second electrode C2) is connected in the negative pole G of battery, the weak end (i.e. the first electrode C1) of withstand voltage connects and second source end VM, if the end (first electrode C1) of withstand voltage a little less than in the time of also can tolerating the charger reversal connection second source end VM hold the voltage between the negative pole G of battery to get final product voltage.
Charger voltage is higher in some applications, and in the larger situation of stray inductance, the required withstand voltage of described metal-oxide-semiconductor is higher.Please refer to shown in Figure 5ly, it is the metal-oxide-semiconductor structural representation in another embodiment among Fig. 3.Compare with Fig. 4, Fig. 5 is at the NG layer that has increased between N+ active area and the P+ active area between described P-layer and described N+ active area, and the doping content of this NG layer is low than the N+ active area, and the P-N knot of NG layer and P-layer formation is withstand voltage higher like this.
Please refer to shown in Figure 6ly, it is the metal-oxide-semiconductor structural representation in another embodiment among Fig. 3.Compare with Fig. 5, its difference is: the first electrode C1(N+ active area among Fig. 5) the described grid oxide layer lateral surface of next-door neighbour, and the first electrode C1(N+ active area among Fig. 6) with described grid oxide layer lateral surface space.
Please refer to Fig. 7 a-7e, it is the metal-oxide-semiconductor process drawing in one embodiment among Fig. 4.
Below in conjunction with the concrete manufacture process of introducing metal-oxide-semiconductor as shown in Figure 4 of Fig. 7 a-7e.
The first step forms the N-epitaxial loayer by deposit on the N+ substrate, then form the P-epitaxial loayer by deposit and obtain structure such as Fig. 7 a.
Second step forms through over etching and to run through the P-layer until the groove in the N-layer, shown in Fig. 7 b.
The 3rd step, adopt oxygen to carry out dry oxidation and produce grid oxide layer, depositing polysilicon again is shown in Fig. 7 c.
The 4th step, first etch polysilicon, etching grid oxide layer again is so that the upper surface of P-layer, polysilicon and grid oxide layer is concordant, shown in Fig. 7 d.
The 5th step, carry out first N+ and inject, then carry out P+ and inject, extend downward N+ active area in the P-layer to form upper surface from the P-layer, the upper surface from the P-layer of formation and described N+ active area space extends downward the P+ active area in the P-layer, shown in Fig. 7 e.So just formed the metal-oxide-semiconductor structure among Fig. 4.Here, also can carry out first P+ and inject, then carry out N+ and inject.
Please refer to shown in Fig. 8 a-8c, it is the metal-oxide-semiconductor process drawing in another embodiment of Fig. 6.
Shown in Fig. 7 a-7d and Fig. 8 a-8c, the concrete manufacture process of introducing metal-oxide-semiconductor as shown in Figure 6.
The first step can adopt first the step identical with Fig. 7 a ~ 7d to produce the structure of Fig. 7 d, shown in Fig. 7 a.
Second step injects by mask, forms to be positioned at described P-layer around the NG layer of described grid oxide layer, shown in Fig. 7 b.
The 3rd step, carry out first N+ and inject, then carry out P+ and inject, perhaps carry out first P+ and inject, then carry out N+ and inject, to form N+ active area and P+ active area, shown in Fig. 8 c, obtain like this structure identical with Fig. 6.
The follow-up rear end operation that also needs to carry out semiconductor technology of Fig. 7 e and Fig. 8 c is processed, and for example forms contact hole, forms contacting of grid, source electrode and drain electrode with metal level.These and existing technique are identical, for simplified characterization, omit herein.
In sum; the present invention adopts a metal-oxide-semiconductor as the power switch of battery protecting circuit; described metal-oxide-semiconductor comprises the first electrode C1, the second electrode C2, grid C3 and lining body C4; described lining body can optionally be connected in the lower end of voltage in the first electrode and the second electrode; make this metal-oxide-semiconductor realize with prior art in connect as the identical function of power switch by two metal-oxide-semiconductors; can save the chip area of power switch, thereby reduce the area of chip, and then reduce the cost of chip.
In addition, it is pointed out that the metal-oxide-semiconductor that proposes among Fig. 4, Fig. 5 and Fig. 6 not only can be used in the battery protecting circuit of Fig. 3, can also be used for other and need field high pressure resistant and that the lining body switches.
It is pointed out that and be familiar with the scope that any change that the person skilled in art does the specific embodiment of the present invention does not all break away from claims of the present invention.Correspondingly, the scope of claim of the present invention also is not limited only to previous embodiment.
Claims (9)
1. metal-oxide-semiconductor, it is characterized in that, it comprises the N+ substrate, be formed at the N-layer of N+ substrate top, be formed at the P-layer of N-layer top, extend downward grid in the N-layer from the upper surface of P-layer, half centers on described grid with the grid oxide layer with described gate isolation, extend downward N+ active area in the P-layer from the upper surface of P-layer, extend downward P+ active area in the P-layer with the upper surface from the P-layer of described N+ active area space, P+ represents the heavy doping of P type, P-represents P type light dope, N+ represents N-type heavy doping, and N-represents the N-type light dope
The N+ active area forms the first electrode of described metal-oxide-semiconductor, and the N+ substrate forms the second electrode of described metal-oxide-semiconductor, and the P+ active area forms the lining body of described metal-oxide-semiconductor.
2. metal-oxide-semiconductor according to claim 1 is characterized in that, described N+ active area is close to described grid oxide layer or described N+ active area and described grid oxide layer space.
3. metal-oxide-semiconductor according to claim 1, it is characterized in that the upper surface of described grid is exposed to outside the described grid oxide layer, described grid oxide layer is U-shaped, the P+ active area further from described grid, all is provided with P+ active area and N+ active area in the both sides of described grid than the N+ active area.
4. arbitrary described metal-oxide-semiconductor is characterized in that according to claim 1-3, and described metal-oxide-semiconductor also comprises the NG layer between described P-layer and described N+ active area, and the more described N+ active area of the doping content of this NG layer is low, and NG represents to mix in the N-type.
5. the manufacture method of metal-oxide-semiconductor as claimed in claim 1 is characterized in that, it comprises the steps:
On the N+ substrate, form the N-epitaxial loayer by deposit, then form the P-epitaxial loayer by deposit;
Through over etching, form and run through the P-layer until the groove in the N-layer;
Adopt oxygen to carry out dry oxidation, produce grid oxide layer, again depositing polysilicon;
Elder generation's etch polysilicon, etching grid oxide layer again is so that the upper surface of P-layer, polysilicon and grid oxide layer is concordant;
Carry out N+ injection and P+ and inject to form described N+ active area and described P+ active area.
6. the manufacture method of metal-oxide-semiconductor as claimed in claim 4 is characterized in that, it comprises the steps:
On the N+ substrate, form the N-epitaxial loayer by deposit, then form the P-epitaxial loayer by deposit;
Through over etching, form and run through the P-layer until the groove in the N-layer;
Adopt oxygen to carry out dry oxidation, produce grid oxide layer, again depositing polysilicon;
Elder generation's etch polysilicon, etching grid oxide layer again is so that the upper surface of P-layer, polysilicon and grid oxide layer is concordant;
Inject by mask, form the NG layer that is positioned at described grid oxide layer both sides;
Carrying out N+ injects and carries out P+ and inject to form described N+ active area and P+ active area.
7. a battery protecting circuit is characterized in that, it comprises battery protection control circuit and a metal-oxide-semiconductor,
Described metal-oxide-semiconductor is such as the arbitrary described metal-oxide-semiconductor of claim 1-4,
The first electrode of described metal-oxide-semiconductor links to each other with the negative pole of battery, and the second electrode links to each other with the second source end, and the positive pole of described battery links to each other with the first power end,
Described battery protection control circuit comprises power switch control circuit and lining body selection circuit,
Described power switch control circuit is used for the charging and discharging state of battery is detected to generate the driving signal to the grid of described metal-oxide-semiconductor;
Described lining body selects circuit to link to each other with the lining body of described metal-oxide-semiconductor, is used for described lining body optionally is connected in the first electrode and the lower end of the second electrode voltage.
8. battery protecting circuit according to claim 7; it is characterized in that; described lining body is selected circuit to include the voltage decision circuitry and is connected commutation circuit; described voltage decision circuitry compares the voltage of the first electrode and the voltage of the second electrode; when the voltage of the first electrode is higher than the voltage of the second electrode; notify described connection commutation circuit that described lining body is connected to the second electrode; when the voltage of the first electrode is lower than the voltage of the second electrode, notify described connection commutation circuit that described lining body is connected to the first electrode.
9. to remove the arbitrary described battery protecting circuit of 7-8 according to right, it is characterized in that described power switch control circuit comprises threshold detection circuit, control circuit, drive circuit and charge pump,
Described threshold detection circuit is used for the charging and discharging state of battery is detected to generate detection signal;
Described control circuit generates corresponding control signal according to the detection signal of described threshold detection circuit output;
Described drive circuit is according to the grid of described control signal output drive signal to metal-oxide-semiconductor;
Charge pump is used for promoting the supply voltage of drive circuit.
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| CN201210369459.XA CN102881725B (en) | 2012-09-28 | 2012-09-28 | A kind of metal-oxide-semiconductor and manufacture method thereof and the application of this metal-oxide-semiconductor in battery protecting circuit |
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| CN201210369459.XA CN102881725B (en) | 2012-09-28 | 2012-09-28 | A kind of metal-oxide-semiconductor and manufacture method thereof and the application of this metal-oxide-semiconductor in battery protecting circuit |
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| CN102881725B CN102881725B (en) | 2016-05-04 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199593A (en) * | 2013-04-26 | 2013-07-10 | 无锡中星微电子有限公司 | Charging management circuit and system |
| CN104779589A (en) * | 2015-03-31 | 2015-07-15 | 无锡中星微电子有限公司 | Battery protection circuit and system |
| CN108141034A (en) * | 2015-04-03 | 2018-06-08 | 上海新进半导体制造有限公司 | A kind of embedded battery protection circuit, control circuit and signal processing circuit |
| CN110165740A (en) * | 2019-06-03 | 2019-08-23 | 重庆斯微奇电子技术有限公司 | A kind of battery protecting circuit and power supply unit |
| CN110445099A (en) * | 2019-08-06 | 2019-11-12 | 苏州赛芯电子科技有限公司 | A kind of semiconductor structure and its manufacturing process of integrated battery protection circuit |
| CN111725871A (en) * | 2019-12-30 | 2020-09-29 | 华为技术有限公司 | Charging protection circuit, charging circuit and electronic equipment |
| WO2023123363A1 (en) * | 2021-12-31 | 2023-07-06 | Innoscience (suzhou) Semiconductor Co., Ltd. | Nitride-based bidirectional switching device and method for manufacturing the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050052802A1 (en) * | 2002-10-02 | 2005-03-10 | Chi-Chang Wang | Complementary metal oxide semiconductor structure for battery protection circuit and battery protection circuit having the same |
| CN1885561A (en) * | 2005-06-22 | 2006-12-27 | 三洋电机株式会社 | Insulated gate semiconductor device, protection circuit and their manufacturing method |
| CN101483335A (en) * | 2009-02-03 | 2009-07-15 | 赛芯微电子（苏州）有限公司 | Highly integrated battery protection circuit |
| CN102005734A (en) * | 2010-10-20 | 2011-04-06 | 无锡中星微电子有限公司 | Battery protection integrated circuit and system |
| CN202930390U (en) * | 2012-09-28 | 2013-05-08 | 无锡中星微电子有限公司 | MOS (Metal Oxide Semiconductor) tube and battery protective circuit using MOS tube |
-
2012
- 2012-09-28 CN CN201210369459.XA patent/CN102881725B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050052802A1 (en) * | 2002-10-02 | 2005-03-10 | Chi-Chang Wang | Complementary metal oxide semiconductor structure for battery protection circuit and battery protection circuit having the same |
| CN1885561A (en) * | 2005-06-22 | 2006-12-27 | 三洋电机株式会社 | Insulated gate semiconductor device, protection circuit and their manufacturing method |
| CN101483335A (en) * | 2009-02-03 | 2009-07-15 | 赛芯微电子（苏州）有限公司 | Highly integrated battery protection circuit |
| CN102005734A (en) * | 2010-10-20 | 2011-04-06 | 无锡中星微电子有限公司 | Battery protection integrated circuit and system |
| CN202930390U (en) * | 2012-09-28 | 2013-05-08 | 无锡中星微电子有限公司 | MOS (Metal Oxide Semiconductor) tube and battery protective circuit using MOS tube |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199593A (en) * | 2013-04-26 | 2013-07-10 | 无锡中星微电子有限公司 | Charging management circuit and system |
| CN104779589A (en) * | 2015-03-31 | 2015-07-15 | 无锡中星微电子有限公司 | Battery protection circuit and system |
| CN104779589B (en) * | 2015-03-31 | 2018-03-23 | 无锡中感微电子股份有限公司 | Battery protecting circuit and system |
| CN108141034A (en) * | 2015-04-03 | 2018-06-08 | 上海新进半导体制造有限公司 | A kind of embedded battery protection circuit, control circuit and signal processing circuit |
| CN110165740A (en) * | 2019-06-03 | 2019-08-23 | 重庆斯微奇电子技术有限公司 | A kind of battery protecting circuit and power supply unit |
| CN110165740B (en) * | 2019-06-03 | 2020-08-25 | 重庆斯微奇电子技术有限公司 | Battery protection circuit and power supply device |
| CN110445099A (en) * | 2019-08-06 | 2019-11-12 | 苏州赛芯电子科技有限公司 | A kind of semiconductor structure and its manufacturing process of integrated battery protection circuit |
| CN110445099B (en) * | 2019-08-06 | 2020-10-23 | 苏州赛芯电子科技有限公司 | Semiconductor structure of integrated battery protection circuit and manufacturing process thereof |
| CN111725871A (en) * | 2019-12-30 | 2020-09-29 | 华为技术有限公司 | Charging protection circuit, charging circuit and electronic equipment |
| CN111725871B (en) * | 2019-12-30 | 2021-10-15 | 华为技术有限公司 | Charging protection circuit, charging circuit and electronic equipment |
| US12002801B2 (en) | 2019-12-30 | 2024-06-04 | Huawei Technologies Co., Ltd. | Charging protection circuit, charging circuit, and electronic device |
| WO2023123363A1 (en) * | 2021-12-31 | 2023-07-06 | Innoscience (suzhou) Semiconductor Co., Ltd. | Nitride-based bidirectional switching device and method for manufacturing the same |
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