CN102880198B - Structural vibration semi-active control system based on asymmetrical control circuit - Google Patents
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Abstract
The invention discloses a structural vibration semi-active control system based on an asymmetrical control circuit. The structural vibration semi-active control system based on the asymmetrical control circuit comprises a piezoelectric drive unit, the asymmetrical control circuit, a piezoelectric sensing unit and a system circuit, wherein the asymmetrical control circuit consists of a diode, a capacitor and switches; the diode and the capacitor are connected in series; and the switches are connected in parallel at two ends of the diode. The structural vibration semi-active control system based on the asymmetrical control circuit realizes asymmetrical turning of voltage at two ends of a piezoelectric component in synchronized switch damping of induction (SSDI) and synchronized switch damping of voltage (SSDV) technology by changing the composition of a switch unit in the system circuit, enlarges the selectable range of piezoelectric components in semi-active vibration control, more effectively controls structural vibration and has wide application prospect in structural vibration control.
Description
Technical field
The present invention relates to Structural Vibration Control Systems, especially the Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit.
Background technology
The high frequency response characteristic of piezoelectric and electromechanical coupling characteristics make to have obtained applying widely in its intellectuality in structure and vibration control.At present, the structural vibration control method based on piezoelectric mainly can be divided into three kinds: ACTIVE CONTROL, Passive Control and half ACTIVE CONTROL.Piezoelectricity half Active Control Method is based on piezoelectricity initiatively and a kind of new vibration control method that gets up of Passive Control technical development, is studied just widely at present.Representative is a kind of half active vibration control method based on non-linear synchro switch damping, this method is called as SSD technology (SSD:Synchronized Switch Damping), in circuit, some simple electronic components such as series inductance and switch make the electric energy on piezoelectric element be consumed fast or realize voltage upset, thereby reach the object of vibration damping.Compared with passive, Active Control Method, the control system of this method is simple, only switch needs outside energy, therefore control desired outside energy very little, do not need accurate structural vibration model, and it is more stable to control effect, is suitable for wide-band vibration control, and these make the method aspect structural vibration control, have wide Research Prospects.At present, the half active vibration control method based on non-linear synchro switch damping is mainly divided into four kinds, short circuit synchro switch damping (SSDS technology), inductance synchro switch damping (SSDI technology), voltage synchro switch damping (SSDV technology) and negative capacitance synchro switch damping (SSDNC technology).
In research in the past, for half active vibration control method of non-linear synchro switch damping, the voltage upset at piezoelectric element two ends is all symmetrical, and for the piezoelectric element that needs the asymmetric upset of voltage, such as piezoelectric fibre composite material MFC(MFC:Macro Fiber Composite) etc., the party's rule has its limitation.
Summary of the invention
Technical matters to be solved by this invention is the deficiency for above-mentioned background technology, and the system of the Structural Vibration Semi-active Control Technology based on asymmetrical control circuit is provided.
The present invention adopts following technical scheme for achieving the above object:
Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit, comprising: piezo-electric drive units, asymmetrical control circuit, piezoelectric sensing unit, circuit system; Wherein, described piezo-electric drive units comprises that at least one is sticked at the first piezoelectric element of quilt control body structure surface, described asymmetrical control circuit comprises the first diode, electric capacity, the first power switch pipe, described piezoelectric sensing unit comprises that at least one is sticked at the second piezoelectric element of quilt control body structure surface, and described circuit system comprises extreme value detecting unit, inductance, switch element, signal processing unit;
In described asymmetrical control circuit: a utmost point of the first diode is connected with the first piezoelectric element, another utmost point is connected with one end of electric capacity; The other end of described electric capacity is connected with the first piezoelectric element, described the first power switch pipe is also connected in the first diode two ends, one end of described inductance is connected with the output terminal of the first piezoelectric element, the other end is connected with one end of switch element, and the other end of switch element is connected with the input end of the first piezoelectric element; The input end of described extreme value detecting unit is connected with the second piezoelectric element, and output terminal is connected with switch element; The output signal of described signal processing unit input termination extreme value detecting unit, the voltage signal that the first piezoelectric element produces, output terminal is connected with the control utmost point of the first power switch pipe.
In the described Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit, switch element comprises: the second diode, the 3rd diode, the second power switch pipe, the 3rd power switch pipe; Wherein:
The anode of described the second diode is connected with the negative electrode of the 3rd diode, and negative electrode is connected with one end of the second power switch pipe; The other end of described the second power switch pipe is connected with one end of the 3rd power switch pipe, the anodic bonding of the other end of described the 3rd power switch pipe and the 3rd diode.
In the described Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit, switch element comprises: the second diode, the 3rd diode, the second power switch pipe, the 3rd power switch pipe, the first voltage source, second voltage source; Wherein:
The anode of described the second diode is connected with the negative electrode of the 3rd diode, and negative electrode is connected with one end of the second power switch pipe; The other end of described the second power switch pipe is connected with the first voltage source negative pole; The positive pole of described the first voltage source is connected with second voltage source negative pole; Described second voltage source is anodal to be connected with one end of the 3rd power switch pipe, the anodic bonding of the other end of described the 3rd power switch pipe and the 3rd diode.
The present invention adopts technique scheme, there is following beneficial effect: utilization of the present invention is asymmetrical control circuit in parallel at piezoelectric element two ends, realize the asymmetric upset of piezoelectric element both end voltage, expand the selectable scope of piezoelectric element in half active vibration control, thereby can more effectively control structural vibration, in structural vibration control, there is application prospect widely.
Brief description of the drawings
Fig. 1 is the schematic diagram of the Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit.
Fig. 2 is the circuit diagram of specific embodiment one.
Fig. 3 is the controlled structural vibration displacement of embodiment mono-, voltage and speed curve diagram.
Fig. 4 is the circuit diagram of specific embodiment two.
Fig. 5 is the controlled structural vibration displacement of embodiment bis-, voltage and speed curve diagram.
Number in the figure explanation: M1, M2 are first, second piezoelectric element, K1 is switch element, L is inductance, C is electric capacity, and D1-D3 is the first to the 3rd diode, and S1-S3 is the first to the 3rd power switch pipe, U1, U2 are first, second direct voltage source, 1 is piezo-electric drive units, and 2 is asymmetrical control circuit, and 3 is piezoelectric sensing unit.
Embodiment
Below in conjunction with accompanying drawing, the technical scheme of invention is elaborated:
The Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit as shown in Figure 1, comprising: piezo-electric drive units 1, asymmetrical control circuit 2, piezoelectric sensing unit 3, circuit system.Piezo-electric drive units 1 comprises that at least one is sticked at the first piezoelectric element M1 of quilt control body structure surface, asymmetrical control circuit 2 comprises the first diode D1, capacitor C, the first power switch tube S 1, piezoelectric sensing unit 3 comprises that at least one is sticked at the second piezoelectric element M2 of quilt control body structure surface, and circuit system comprises extreme value detecting unit, inductance L, switch element K1, signal processing unit.The series arm of the first diode D1, capacitor C composition is connected in parallel on the two ends of the first piezoelectric element M1, the first power switch tube S 1 is also connected in the first diode D1 two ends, one end of inductance L is connected with the output terminal of the first piezoelectric element M1, the other end is connected with one end of switch element K1, and the other end of switch element K1 is connected with the input end of the first piezoelectric element M1; The input end of extreme value detecting unit is connected with the second piezoelectric element M2, and output terminal is connected with switch element; The output signal of the input termination extreme value detecting unit of signal processing unit, the voltage signal that the first piezoelectric element (M1) produces, output terminal is connected with the control utmost point of the first power switch tube S 1.Extreme value detecting unit is vibration displacement pick-up unit and computer measurement system, and signal processing unit is switch triggering circuit.Structural vibration displacement is converted to transducing signal by vibration displacement pick-up unit, the extreme point of computer measurement system monitoring transducing signal, and square switch triggering circuit square-wave signal is to produce the gate pole control signal of power switch pipe.
In the time there is vibration in structure, be arranged in advance structural the first piezoelectric element M1 and the second piezoelectric element M2 upper by the voltage signal producing due to structural vibration induction, and because two piezoelectric patches are arranged in identical position, therefore can respond to identical vibration voltage signal.The first piezoelectric element M1 is as the driver of vibration control, and the second piezoelectric element M2 is as the sensor in vibration control circuit.In the time that the displacement of structural vibration reaches extreme value, the displacement extreme value pick-up unit of structural vibration will be exported control signal to switch, switch rapid closing in loop, because the first piezoelectric element M1 generally can be equivalent to a capacitor, to there is LC high-frequency resonance in the inductance L in piezoelectric element and loop when switch closure so, rapid cut-off switch in the time of resonance oscillations half period, now reverse before the voltage on the first piezoelectric element M1 and switch closure, after adding asymmetrical control circuit, due to the effect of the first diode, the energy producing when controlled structural vibration can only uniaxially to capacitor charging, keep the first switch to disconnect, only the first piezoelectric element M1 both end voltage become from the extreme value of bearing 0 or the first piezoelectric element M1 both end voltage while becoming 0(the first diode reverse place in circuit from positive extreme value) time in, closed the first power switch tube S 1, can realize the asymmetric upset of the first piezoelectric element M1 both end voltage.After switch element K1 switch disconnects, the upper voltage producing of the first piezoelectric element M1 and the displacement same-phase of structural vibration, in the time that the displacement of structural vibration reaches extreme value again, then close a switch, cut-off switch after higher-order of oscillation half period.Control first power switch tube S 1 of going round and beginning again and the motion of switch element K1, make the upper voltage producing of the first piezoelectric element M1 reverse with the velocity reversal of structural vibration all the time, thereby reach the object of vibration control.
In view of SSDS method, SSDNC technology do not relate to the upset of voltage, the present invention only illustrates the voltage upset of SSDI, SSDV.
Specific embodiment one:
As shown in Figure 2, the Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit comprises: piezo-electric drive units 1, asymmetrical control circuit 2, piezoelectric sensing unit 3, circuit system.Piezo-electric drive units 1 comprises that at least one is sticked at the first piezoelectric element M1 of quilt control body structure surface, asymmetrical control circuit 2 comprises the first diode D1, capacitor C, the first power switch tube S 1, piezoelectric sensing unit 3 comprises that at least one is sticked at the second piezoelectric element M2 of quilt control body structure surface, and circuit system comprises extreme value detecting unit, inductance L, switch element K1, signal processing unit.The negative electrode of the first diode D1 is connected with the first piezoelectric element M1, anode is connected with capacitor C one end, the other end of capacitor C is connected with the first piezoelectric element M1, the first power switch tube S 1 is also connected in the first diode D1 two ends, one end of inductance L is connected with the output terminal of the first piezoelectric element M1, the other end is connected with one end of switch element K1, and the other end of switch element K1 is connected with the input end of the first piezoelectric element M1; The input end of extreme value detecting unit is connected with the second piezoelectric element M2, and output terminal is connected with switch element; The input end of signal processing unit is connected with the output terminal of extreme value detecting unit, and output terminal is connected with the control utmost point of the first power switch tube S 1.In addition, the first diode D1 can also be connected like this with capacitor C: the anode of the first diode D1 is connected with the first piezoelectric element M1, and negative electrode is connected with capacitor C one end.
Switch element K1 comprises: the second diode D2, the 3rd diode D3, the second power switch tube S 2, the 3rd power switch tube S 3.Wherein: the anode of the second diode D2 is connected with the negative electrode of the 3rd diode D3, negative electrode is connected with one end of the second power switch tube S 2; The other end of the second power switch tube S 2 is connected with one end of the 3rd power switch tube S 3, the anodic bonding of the other end of the 3rd power switch tube S 3 and the 3rd diode D3.The anode of the second diode D2 is with the tie point of the 3rd diode D3 negative electrode the terminal that switch element K1 is connected with inductance L, and the second power switch tube S 2 is with the tie point of the 3rd power switch tube S 3 terminal that switch element K1 is connected with the first piezoelectric element M1.
Instantiation one can be realized asymmetric SSDI technology, and voltage inverse values forward absolute value is larger, and negative sense absolute value is less, and the controlled structural vibration displacement of specific embodiment one, voltage and speed curve diagram are as shown in Figure 3.
The control procedure of specific embodiment one: when the displacement of semi-girder is become from the maximum value of bearing in positive maximum value process, first, second, third power switch tube S 1, S2, S3 all disconnect, the first piezoelectric element M1 is in positive charge state, the first diode D1 is in cut-off state, capacitor C is not in charged state, the first piezoelectric element M1 both end voltage reaches positive extreme value gradually, and capacitor C both end voltage is constant; In the time that displacement reaches positive maximum value, the second power switch tube S 2 closures, the first, the 3rd power switch tube S 1, S3 disconnect, the first diode D1 and the second diode D2 conducting, the first piezoelectric element M1 and inductance L form high-frequency resonant loop, the first piezoelectric element M1 both end voltage gradually becomes negative value and reaches absolute value maximum, and capacitor C is in positive charge state, and both end voltage reaches maximum value gradually; After LC vibration half period, first, second, third power switch tube S 1, S2, S3 all disconnect, the first piezoelectric element M1 is in reverse charging state, the first diode D1 conducting, capacitor C is in positive charge state, the first piezoelectric element M1 both end voltage reaches reverse maximum value gradually, and capacitor C both end voltage reaches forward maximal value gradually; In the time that displacement reaches negative maximum value, the first, the 3rd power switch tube S 1, S3 closure, the second power switch tube S 2 disconnects, the 3rd diode D3 conducting, the first piezoelectric element M1 and inductance L form high-frequency resonant loop, and the first piezoelectric element M1 carries out reverse charging to capacitor C simultaneously, and in capacitor C, electric charge is neutralized gradually, the voltage value of tending towards stability, the first piezoelectric element M1 both end voltage gradually becomes 0; In the time that piezoelectric element both end voltage becomes 0, the 3rd power switch tube S 3 closures, first, second power switch tube S 1, S2 all disconnects, the 3rd diode D3 conducting, the first piezoelectric element M1 and inductance L form high-frequency resonant loop, and it is large that piezoelectric element both end voltage becomes gradually, while reaching maximal value, disconnect the 3rd power switch tube S 3, capacitor C both end voltage remains unchanged.
Specific embodiment two:
As shown in Figure 4, the Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit comprises: piezo-electric drive units 1, asymmetrical control circuit 2, piezoelectric sensing unit 3, circuit system.Piezo-electric drive units 1 comprises that at least one is sticked at the first piezoelectric element M1 of quilt control body structure surface, asymmetrical control circuit 2 comprises the first diode D1, capacitor C, the first power switch tube S 1, piezoelectric sensing unit 3 comprises that at least one is sticked at the second piezoelectric element M2 of quilt control body structure surface, and circuit system comprises extreme value detecting unit, inductance L, switch element K1, signal processing unit.The anode of the first diode D1 is connected with the first piezoelectric element M1, negative electrode is connected with capacitor C one end, the other end of capacitor C is connected with the first piezoelectric element M1, the first power switch tube S 1 is also connected in the first diode D1 two ends, one end of inductance L is connected with the output terminal of the first piezoelectric element M1, the other end is connected with one end of switch element K1, and the other end of switch element K1 is connected with the input end of the first piezoelectric element M1; The input end of extreme value detecting unit is connected with the second piezoelectric element M2, and output terminal is connected with switch element; The input end of signal processing unit is connected with the output terminal of extreme value detecting unit, and output terminal is connected with the control utmost point of the first power switch tube S 1.In addition, the first diode D1 can also be connected like this with capacitor C: the negative electrode of the first diode D1 is connected with the first piezoelectric element M1, and anode is connected with capacitor C one end.
Switch element K1 comprises: the second diode D2, the 3rd diode D3, the second power switch tube S 2, the 3rd power switch tube S 3, the first voltage source U1, second voltage source U2.The anode of the second diode D2 is connected with the negative electrode of the 3rd diode D3, and negative electrode is connected with one end of the second power switch tube S 2; The other end of the second power switch tube S 2 is connected with the first voltage source U1 negative pole; The positive pole of the first voltage source U1 is connected with second voltage source U2 negative pole; Second voltage source U2 is anodal to be connected with one end of the 3rd power switch tube S 3, the anodic bonding of the other end of the 3rd power switch tube S 3 and the 3rd diode D3.The anode of the second diode D2 is with the tie point of the 3rd diode D3 negative electrode the terminal that switch element K1 is connected with inductance L, and the first voltage source U1 is anodal is with the tie point of second voltage source U2 negative pole the terminal that switch element K1 is connected with the first piezoelectric element M1.
Instantiation two can be realized asymmetric SSDV technology, and voltage inverse values negative sense absolute value is larger, and forward absolute value is less, and the controlled structural vibration displacement of specific embodiment one, voltage and speed curve diagram are as shown in Figure 5.
The control procedure of specific embodiment two: when the displacement of semi-girder is become from positive maximum value in negative maximum value process, first, second, third power switch tube S 1, S2, S3 all disconnect, the first piezoelectric element M1 is in reverse charging state, the first diode D1 is in cut-off state, capacitor C is not in charged state, the first piezoelectric element M1 both end voltage reaches negative extreme value gradually, and capacitor C both end voltage is constant; In the time that displacement reaches negative maximum value, the 3rd power switch tube S 3 closures, first, second power switch tube S 1, S2 disconnect, the first diode D1 and the 3rd diode D3 conducting, the first piezoelectric element M1 and inductance L form high-frequency resonant loop, the first piezoelectric element M1 both end voltage gradually becomes on the occasion of and reaches absolute value maximum, and capacitor C is in reverse charging state, and both end voltage reaches maximum value gradually; After LC vibration half period, first, second, third power switch tube S 1, S2, S3 all disconnect, the first piezoelectric element M1 is in positive charge state, the first diode D1 conducting, capacitor C is in reverse charging state, the first piezoelectric element M1 both end voltage reaches forward maximum value gradually, and capacitor C both end voltage reaches reverse maximal value gradually; In the time that displacement reaches positive maximum value, first, second power switch tube S 1, S2 closure, the 3rd power switch tube S 3 disconnects, the second diode D2 conducting, the first piezoelectric element M1 and inductance L form high-frequency resonant loop, and the first piezoelectric element M1 carries out positive charge to capacitor C simultaneously, and in capacitor C, electric charge is neutralized gradually, the voltage value of tending towards stability, the first piezoelectric element M1 both end voltage gradually becomes 0; In the time that piezoelectric element both end voltage becomes 0, the second power switch tube S 2 closures, the first, the 3rd power switch tube S 1, S3 all disconnects, the second diode D2 conducting, the first piezoelectric element M1 and inductance L form high-frequency resonant loop, and it is large that piezoelectric element both end voltage becomes gradually, while reaching maximal value, disconnect the second power switch pipe switch S 2, capacitor C both end voltage remains unchanged.
In sum, Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit of the present invention is utilized the asymmetrical control circuit in parallel at piezoelectric element two ends, realize the asymmetric upset of piezoelectric element both end voltage, expand the selectable scope of piezoelectric element in half active vibration control, thereby can more effectively control structural vibration, in structural vibration control, there is application prospect widely.
Claims (3)
1. the Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit, comprising: piezo-electric drive units (1), piezoelectric sensing unit (3), circuit system; Wherein, described piezo-electric drive units (1) comprises that at least one is sticked at first piezoelectric element (M1) of quilt control body structure surface, described piezoelectric sensing unit (3) comprises that at least one is sticked at second piezoelectric element (M2) of quilt control body structure surface, described circuit system comprises: extreme value detecting unit, inductance (L), switch element (K1), the input end of extreme value detecting unit is connected with the second piezoelectric element (M2), and the output terminal of extreme value detecting unit is connected with switch element;
It is characterized in that: circuit system also comprises signal processing unit;
The described Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit also comprises asymmetrical control circuit (2), asymmetrical control circuit (2) comprising: the first diode (D1), electric capacity (C), the first power switch pipe (S1), one utmost point of the first diode (D1) is connected with the first piezoelectric element (M1), and another utmost point is connected with the one end of electric capacity (C); The other end of described electric capacity (C) is connected with the first piezoelectric element (M1), described the first power switch pipe (S1) is also connected in the first diode (D1) two ends, one end of described inductance (L) is connected with the output terminal of the first piezoelectric element (M1), the other end is connected with the one end of switch element (K1), and the other end of switch element (K1) is connected with the input end of the first piezoelectric element (M1); The output signal of described signal processing unit input termination extreme value detecting unit, the voltage signal that the first piezoelectric element (M1) produces, output terminal is connected with the control utmost point of the first power switch pipe (S1).
2. the Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit according to claim 1, is characterized in that described switch element (K1) comprising: the second diode (D2), the 3rd diode (D3), the second power switch pipe (S2), the 3rd power switch pipe (S3); Wherein:
The anode of described the second diode (D2) is connected with the negative electrode of the 3rd diode (D3), and negative electrode is connected with the one end of the second power switch pipe (S2); The other end of described the second power switch pipe (S2) is connected with one end of the 3rd power switch pipe (S3), the anodic bonding of the other end of described the 3rd power switch pipe (S3) and the 3rd diode (D3).
3. the Structural Vibration Semi-active Control Technology system based on asymmetrical control circuit according to claim 1, is characterized in that described switch element (K1) comprising: the second diode (D2), the 3rd diode (D3), the second power switch pipe (S2), the 3rd power switch pipe (S3), the first voltage source (U1), second voltage source (U2); Wherein:
The anode of described the second diode (D2) is connected with the negative electrode of the 3rd diode (D3), and negative electrode is connected with the one end of the second power switch pipe (S2); The other end of described the second power switch pipe (S2) is connected with the first voltage source (U1) negative pole; The positive pole of described the first voltage source (U1) is connected with second voltage source (U2) negative pole; Described second voltage source (U2) is anodal to be connected with one end of the 3rd power switch pipe (S3), the anodic bonding of the other end of described the 3rd power switch pipe (S3) and the 3rd diode (D3).
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| CN103199830A (en) * | 2013-03-08 | 2013-07-10 | 西北工业大学 | Self-sensing impressed voltage source type synchronous switch damping circuit |
| CN104181947B (en) * | 2014-07-28 | 2017-01-11 | 南京航空航天大学 | Semi-active vibration noise control circuit of asymmetric voltage structure |
| US10378934B2 (en) | 2015-02-02 | 2019-08-13 | Goodrich Corporation | Sensor systems |
| US9267824B1 (en) | 2015-02-02 | 2016-02-23 | Goodrich Corporation | Sensor systems |
| CN109324645B (en) * | 2018-11-21 | 2019-11-12 | 南京航空航天大学 | A kind of asymmetric semi-active control aystem and method |
| CN115328227B (en) * | 2022-08-29 | 2023-04-28 | 南京航空航天大学 | Semi-active control device for structural vibration |
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