CN102879847B - Wave filter film structure and use three band filter of this film structure - Google Patents
Wave filter film structure and use three band filter of this film structure Download PDFInfo
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Abstract
The present invention relates to a kind of wave filter film structure and use three band filter of this film structure, this wave filter film structure is (α H β L) ^N|Sub| (LH) ^N, and wherein, Sub is substrate, and H is ZnS rete, and L is YbF
3rete, N is periodicity, α and β is rete optical thickness coefficient.Wave filter film structure susceptibility of the present invention is weak, is easy to be coated with; And rete has, and physical strength is high, internal stress matches, with the advantage such as substrate bonding properties is strong.Adopt three band filter of this film structure to achieve micro-transmission to 1.064 μm and 1.57 mum wavelength laser, transmissivity meets: 7%≤T≤13%; Simultaneously to 7.7 ~ 10.5 mu m waveband height transmissions, average transmittance T
on average>=98%.
Description
Technical field
The invention belongs to optical element film fabrication techniques field, relate to a kind of wave filter film structure, also relate to a kind of three band filter using this film structure simultaneously.
Background technology
Single band detection system easily by the interference of noise signal, is in down state in some environments, and in order to overcome this weakness of single band detection system, multispectral sensing system is used and gives birth to; As the critical elements of multispectral sensing system, three band filter can simplied system structure, improves system looks distance, thus has a wide range of applications in multispectral sensing system.
According to optical system requirement, three band filter will realize 1.064 μm and 1.57 mum wavelength fractional transmission, simultaneously to 7.7 ~ 10.5 mu m waveband height transmissions.Little 1.064 μm, 1.57 μm and the alternative coating materials kind of 7.7 ~ 10.5 mu m wavebands, owing to requiring, to 1.064 μm and the micro-transmission of 1.57 mum wavelengths, to add Film Design difficulty, also there is rete and be coated with the problems such as difficulty is large simultaneously.At present, require that according to optical system the Design & preparation of three band filter film structures of customization is the emphasis of optical thin film research.
Summary of the invention
The object of the present invention is to provide a kind of 1.064 μm, 1.57 μm, 7.7 ~ 10.5 μm three band filter film structure.
Meanwhile, the present invention also aims to provide a kind of three band filter using this film structure.
In order to realize above object, the technical solution adopted in the present invention is: a kind of wave filter film structure, described film structure is
(αHβL)^N｜Sub｜(LH)^N
Wherein, Sub represents substrate, and H is ZnS rete, and L is YbF
3rete, N is periodicity, α and β is rete optical thickness coefficient.
In described film structure (LH) ^N, realize the micro-transmission to 1.064 μm and 1.57 mum wavelength laser, simultaneously to 7.7 ~ 10.5 mu m waveband height transmissions by regulating cycle number N, α and β.
Described α=β=1.48, N=5.
Described substrate is ZnS or ZnSe.
In described film system (LH) ^N, N=5; The rete adjacent with substrate is the 1st layer, outermost layer is the 10th layer, and the geometric thickness value of 1st ~ 10 layers is: the 1st layer of 91.2 ~ 101.3nm, the 2nd layer of 144.2 ~ 165.3nm, 3rd layer of 151.3 ~ 169.7nm, 4th layer of 95.6 ~ 110.5nm, the 5th layer of 225.3 ~ 253.2nm, the 6th layer of 45.2 ~ 55.3nm, 7th layer of 265.4 ~ 293.1nm, 8th layer of 44.8 ~ 56.3nm, the 9th layer of 253.1 ~ 274.2nm, the 10th layer of 73.4 ~ 86.5nm.
In described film system (α H β L) ^N, α=β=1.48, N=5; The rete adjacent with substrate is the 1st layer, outermost layer is the 10th layer, and the geometric thickness value of 1st ~ 10 layers is: the 1st layer of 128.4 ~ 143.5nm, the 2nd layer of 253.1 ~ 276.4nm, 3rd layer of 117.6 ~ 131.5nm, 4th layer of 523.1 ~ 572.6nm, the 5th layer of 338.6 ~ 368.4nm, the 6th layer of 75.3 ~ 86.5nm, 7th layer of 405.3 ~ 436.7nm, 8th layer of 62.6 ~ 76.5nm, the 9th layer of 353.2 ~ 382.1nm, the 10th layer of 146.7 ~ 166.2nm.
Meanwhile, technical scheme of the present invention additionally uses a kind of three band filter utilizing described film structure, and the film structure of this wave filter is
(αHβL)^N｜Sub｜(LH)^N
Wherein, Sub represents substrate, and H is ZnS rete, and L is YbF
3rete, N is periodicity, α and β is rete optical thickness coefficient.
Three band filter of the present invention are on ZnS or ZnSe substrate pros and cons, be coated with film system (LH) ^N and film system (α H β L) ^N respectively, and its preparation method comprises the following steps:
(1) film system (LH) ^N is coated with at substrate one side
A. clean substrate, and bombard 5 ~ 8 minutes with RF radio frequency source;
B. toast substrate, substrate is put into high vacuum coating equipment, be evacuated to 1 × 10
-2pa, heated substrate to 120 DEG C ~ 180 DEG C, is incubated 1 hour;
C. the 1st tunic layer is coated with, YbF
3thermal resistance evaporation boat evaporation put into by coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.5nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 91.2 ~ 101.3nm;
D. be coated with the 2nd tunic layer, thermal resistance evaporation boat evaporation put into by ZnS coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.8nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 144.2 ~ 165.3nm;
E. step c and steps d is repeated successively, be coated with 3rd ~ 10 tunic layers, thicknesses of layers adopts crystal oscillator method to control, the 3rd layer of 151.3 ~ 169.7nm, the 4th layer of 95.6 ~ 110.5nm, 5th layer of 225.3 ~ 253.2nm, 6th layer of 45.2 ~ 55.3nm, the 7th layer of 265.4 ~ 293.1nm, the 8th layer of 44.8 ~ 56.3nm, 9th layer of 253.1 ~ 274.2nm, the 10th layer of 73.4 ~ 86.5nm;
F. vacuum chamber takes out three band filter of one side coated (LH) ^N film system after being cooled to room temperature, obtains having Sub| (LH) ^N film system three band filter, and wherein Sub represents substrate;
(2) film system (α H β L) ^N is coated with at substrate another side
A. the uncoated one side of clean substrate, and bombard 5 ~ 8 minutes with RF radio frequency source;
B. toast substrate, substrate is put into high vacuum coating equipment, be evacuated to 1 × 10
-2pa, heated substrate to 120 DEG C ~ 180 DEG C, is incubated 1 hour;
C. the 1st tunic layer is coated with, YbF
3thermal resistance evaporation boat evaporation put into by coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.5nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 128.4 ~ 143.5nm;
D. be coated with the 2nd tunic layer, thermal resistance evaporation boat evaporation put into by ZnS coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.8nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 253.1 ~ 276.4nm;
E. step c and steps d is repeated successively, be coated with 3rd ~ 10 tunic layers, thicknesses of layers adopts crystal oscillator method to control, the 3rd layer of 117.6 ~ 131.5nm, the 4th layer of 523.1 ~ 572.6nm, 5th layer of 338.6 ~ 368.4nm, 6th layer of 75.3 ~ 86.5nm, the 7th layer of 405.3 ~ 436.7nm, the 8th layer of 62.6 ~ 76.5nm, 9th layer of 353.2 ~ 382.1nm, the 10th layer of 146.7 ~ 166.2nm;
F. vacuum chamber takes out two-sided three all coated band filter after being cooled to room temperature, and had three band filter of (α H β L) ^N|Sub| (LH) ^N film system, wherein Sub represents substrate.
Wave filter film structure susceptibility of the present invention is weak, is easy to be coated with; And rete has, and physical strength is high, internal stress matches, with the advantage such as substrate bonding properties is strong.Adopt three band filter of this film structure to achieve micro-transmission to 1.064 μm and 1.57 mum wavelength laser, transmissivity meets: 7%≤T≤13%; Simultaneously to 7.7 ~ 10.5 mu m waveband height transmissions, average transmittance T
on average>=98%.
Embodiment
Wave filter film structure embodiment 1
1.064 μm, 1.57 μm, 7.7 ~ 10.5 μm three band filter wave system structure of the present embodiment is:
(1.48H1.48L)^5｜ZnS｜(LH)^5
Wherein, H is ZnS rete, and L is YbF
3rete.In film system (HL) ^5, the rete adjacent with ZnS substrate is the 1st layer, and outermost layer is the 10th layer, the geometric thickness value of 1st ~ 10 layers is: the 1st layer of 93.4nm, 2nd layer of 152.3nm, the 3rd layer of 160.2nm, the 4th layer of 102.4nm, 5th layer of 234.6nm, 6th layer of 50.3nm, the 7th layer of 283.1nm, the 8th layer of 48.6nm, 9th layer of 260.5nm, the 10th layer of 79.3nm.In film system (1.48H1.48L) ^5, the rete adjacent with ZnS substrate is the 1st layer, and outermost layer is the 10th layer, the geometric thickness value of 1st ~ 10 layers is: the 1st layer of 137.4nm, 2nd layer of 265.4nm, the 3rd layer of 123.4nm, the 4th layer of 550.4nm, 5th layer of 345.2nm, 6th layer of 80.2nm, the 7th layer of 420.1nm, the 8th layer of 70.2nm, 9th layer of 370.2nm, the 10th layer of 152.3nm.
Wave filter film structure embodiment 2
1.064 μm, 1.57 μm, 7.7 ~ 10.5 μm three band filter wave system structure of the present embodiment is:
(1.48H1.48L)^5｜ZnSe｜(LH)^5
Wherein, H is ZnS rete, and L is YbF
3rete.In film system (HL) ^5, the rete adjacent with ZnSe substrate is the 1st layer, and outermost layer is the 10th layer, the geometric thickness value of 1st ~ 10 layers is: the 1st layer of 96.4nm, 2nd layer of 155.6nm, the 3rd layer of 167.5nm, the 4th layer of 105.3nm, 5th layer of 243.5nm, 6th layer of 53.6nm, the 7th layer of 280.4nm, the 8th layer of 53.2nm, 9th layer of 163.5nm, the 10th layer of 80.5nm.In film system (1.48H1.48L) ^5, the rete adjacent with ZnSe substrate is the 1st layer, and outermost layer is the 10th layer, the geometric thickness value of 1st ~ 10 layers is: the 1st layer of 135.4nm, 2nd layer of 268.5nm, the 3rd layer of 125.6nm, the 4th layer of 546.7nm, 5th layer of 352.4nm, 6th layer of 83.5nm, the 7th layer of 415.1nm, the 8th layer of 73.6nm, 9th layer of 363.4nm, the 10th layer of 156.1nm.
Three band filter embodiments 1
Three band filter of the present embodiment are on ZnS substrate pros and cons, be coated with film system (LH) ^5 and film system (α H β L) ^5, α=β=1.48 respectively, and its preparation method comprises the following steps:
(1) film system (LH) ^5 is coated with at substrate one side
A. clean substrate, and bombard 5 minutes with RF radio frequency source;
B. toast substrate, substrate is put into high vacuum coating equipment, be evacuated to 1 × 10
-2pa, heated substrate to 130 DEG C, is incubated 1 hour;
C. the 1st tunic layer is coated with, YbF
3thermal resistance evaporation boat evaporation put into by coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.5nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 93.4nm;
D. be coated with the 2nd tunic layer, thermal resistance evaporation boat evaporation put into by ZnS coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.8nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 152.3nm;
E. repeat step c and steps d successively, be coated with 3rd ~ 10 tunic layers, thicknesses of layers adopts crystal oscillator method to control, the 3rd layer of 160.2nm, 4th layer of 102.4nm, the 5th layer of 234.6nm, the 6th layer of 50.3nm, the 7th layer of 283.11nm, 8th layer of 48.6nm, the 9th layer of 260.5nm, the 10th layer of 79.3nm;
F. vacuum chamber takes out three band filter of one side coated (LH) ^N film system after being cooled to room temperature, obtains having Sub| (LH) ^N film system three band filter, and wherein Sub represents substrate;
(2) film system (α H β L) ^5 is coated with at substrate another side
A. the uncoated one side of clean substrate, and bombard 5 minutes with RF radio frequency source;
B. toast substrate, substrate is put into high vacuum coating equipment, be evacuated to 1 × 10
-2pa, heated substrate to 130 DEG C, is incubated 1 hour;
C. the 1st tunic layer is coated with, YbF
3thermal resistance evaporation boat evaporation put into by coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.5nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 137.4nm;
D. be coated with the 2nd tunic layer, thermal resistance evaporation boat evaporation put into by ZnS coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.8nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 265.4nm;
E. repeat step c and steps d successively, be coated with 3rd ~ 10 tunic layers, thicknesses of layers adopts crystal oscillator method to control, the 3rd layer of 123.4nm, 4th layer of 550.4nm, the 5th layer of 345.2nm, the 6th layer of 80.2nm, the 7th layer of 420.1nm, 8th layer of 70.2nm, the 9th layer of 370.2nm, the 10th layer of 152.3nm;
F. vacuum chamber takes out two-sided three all coated band filter after being cooled to room temperature, and had three band filter of (α H β L) ^N|Sub| (LH) ^N film system, wherein Sub represents substrate.
Three band filter embodiments 2
Three band filter of the present embodiment are on ZnSe substrate pros and cons, be coated with film system (LH) ^5 and film system (α H β L) ^5, α=β=1.48 respectively, and its preparation method comprises the following steps:
(1) film system (LH) ^5 is coated with at substrate one side
A. clean substrate, and bombard 7 minutes with RF radio frequency source;
B. toast substrate, substrate is put into high vacuum coating equipment, be evacuated to 1 × 10
-2pa, heated substrate to 150 DEG C, is incubated 1 hour;
C. the 1st tunic layer is coated with, YbF
3thermal resistance evaporation boat evaporation put into by coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.5nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 96.4nm;
D. be coated with the 2nd tunic layer, thermal resistance evaporation boat evaporation put into by ZnSe coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.8nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 155.6nm;
E. repeat step c and steps d successively, be coated with 3rd ~ 10 tunic layers, thicknesses of layers adopts crystal oscillator method to control, the 3rd layer of 167.5nm, 4th layer of 105.3nm, the 5th layer of 243.5nm, the 6th layer of 53.6nm, the 7th layer of 280.4nm, 8th layer of 53.2nm, the 9th layer of 163.5nm, the 10th layer of 80.5nm;
F. vacuum chamber takes out three band filter of one side coated (LH) ^N film system after being cooled to room temperature, obtains having Sub| (LH) ^N film system three band filter, and wherein Sub represents substrate;
(2) film system (α H β L) ^5 is coated with at substrate another side
A. the uncoated one side of clean substrate, and bombard 7 minutes with RF radio frequency source;
B. toast substrate, substrate is put into high vacuum coating equipment, be evacuated to 1 × 10
-2pa, heated substrate to 150 DEG C, is incubated 1 hour;
C. the 1st tunic layer is coated with, YbF
3thermal resistance evaporation boat evaporation put into by coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.5nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 135.4nm;
D. be coated with the 2nd tunic layer, thermal resistance evaporation boat evaporation put into by ZnSe coating materials, and during evaporation, pressure in vacuum tank is 1.5 × 10
-3pa, evaporation rate is 0.8nm/s, and thicknesses of layers adopts crystal oscillator method to control, and geometric thickness value is 268.5nm;
E. repeat step c and steps d successively, be coated with 3rd ~ 10 tunic layers, thicknesses of layers adopts crystal oscillator method to control, the 3rd layer of 125.6nm, 4th layer of 546.7nm, the 5th layer of 352.4nm, the 6th layer of 83.5nm, the 7th layer of 415.1nm, 8th layer of 73.6nm, the 9th layer of 363.4nm, the 10th layer of 156.1nm;
F. vacuum chamber takes out two-sided three all coated band filter after being cooled to room temperature, and had three band filter of (α H β L) ^N|Sub| (LH) ^N film system, wherein Sub represents substrate.
Adopt three band filter of embodiment 1, embodiment 2 film structure development, the transmissivity of 1.064 μm and 1.57 mum wavelengths is met: 7%≤T≤13%; At the average transmittance T of 7.7 ~ 10.5 mu m wavebands
on average>=98%.
Claims (4)
1. a wave filter film structure, is characterized in that: described film structure is
(αHβL)^N｜Sub｜(LH)^N
Wherein, Sub represents substrate, and H is ZnS rete, and L is YbF
3rete, N is periodicity, α and β is rete optical thickness coefficient; Described film structure (LH) ^N and (α H β L) ^N, realizes the micro-transmission to 1.064 μm and 1.57 mum wavelength laser, simultaneously to 7.7 ~ 10.5 mu m waveband height transmissions by regulating cycle number N, α and β;
In described film system (LH) ^N, N=5; The rete adjacent with substrate is the 1st layer, outermost layer is the 10th layer, and the geometric thickness value of 1st ~ 10 layers is: the 1st layer of 91.2 ~ 101.3nm, the 2nd layer of 144.2 ~ 165.3nm, 3rd layer of 151.3 ~ 169.7nm, 4th layer of 95.6 ~ 110.5nm, the 5th layer of 225.3 ~ 253.2nm, the 6th layer of 45.2 ~ 55.3nm, 7th layer of 265.4 ~ 293.1nm, 8th layer of 44.8 ~ 56.3nm, the 9th layer of 253.1 ~ 274.2nm, the 10th layer of 73.4 ~ 86.5nm;
In described film system (α H β L) ^N, N=5; The rete adjacent with substrate is the 1st layer, outermost layer is the 10th layer, and the geometric thickness value of 1st ~ 10 layers is: the 1st layer of 128.4 ~ 143.5nm, the 2nd layer of 253.1 ~ 276.4nm, 3rd layer of 117.6 ~ 131.5nm, 4th layer of 523.1 ~ 572.6nm, the 5th layer of 338.6 ~ 368.4nm, the 6th layer of 75.3 ~ 86.5nm, 7th layer of 405.3 ~ 436.7nm, 8th layer of 62.6 ~ 76.5nm, the 9th layer of 353.2 ~ 382.1nm, the 10th layer of 146.7 ~ 166.2nm.
2. wave filter film structure according to claim 1, is characterized in that: described substrate is ZnS or ZnSe.
3. utilize three band filter of film structure described in claim 1, it is characterized in that: the film structure of this wave filter is
(αHβL)^N｜Sub｜(LH)^N
Wherein, Sub represents substrate, and H is ZnS rete, and L is YbF
3rete, N is periodicity, α and β is rete optical thickness coefficient.
4. three band filter according to claim 3, is characterized in that: described substrate is ZnS or ZnSe.
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| CN103668067B (en) * | 2013-12-09 | 2016-01-13 | 西南技术物理研究所 | The preparation method of the infrared highly reflecting films system of wide-angle multiband |
| CN108388026A (en) * | 2018-01-26 | 2018-08-10 | 苏州市唯嘉光学有限公司 | A kind of 3D glasses and preparation method thereof |
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| CN102338892B (en) * | 2011-09-29 | 2013-11-13 | 中国航空工业集团公司洛阳电光设备研究所 | Anti-reflection film with ZnS as substrate and large incidence angle at optical bands of 1064nm and 8-10mum and ZnS optical window |
| CN202275172U (en) * | 2012-03-12 | 2012-06-13 | 杭州麦乐克电子科技有限公司 | 8000-14000 nanometer band-pass infrared filter |
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