CN102864438A - Plasma-assistant deposition method and equipment for carrying out same - Google Patents
Plasma-assistant deposition method and equipment for carrying out same Download PDFInfo
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- CN102864438A CN102864438A CN2012102077649A CN201210207764A CN102864438A CN 102864438 A CN102864438 A CN 102864438A CN 2012102077649 A CN2012102077649 A CN 2012102077649A CN 201210207764 A CN201210207764 A CN 201210207764A CN 102864438 A CN102864438 A CN 102864438A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
Abstract
The invention relates to a plasma-assistant deposition method used for depositing at least one dielectric substance on a silicon-containing substrate (3); the method comprises the following steps: supplying at least one type of gas suitable for generating a dielectric substance layer into a deposition equipment (1), monitoring the emission intensity of the gas in the deposition equipment (1) on at least one first wavelength or spectral band, generating a signal according to the emission intensity monitored on the at least one first wavelength or spectral band, transmitting the signal to at least one control device (4, 10), and controlling at least one parameter influencing the deposition process and/or the supply of the substrate (3) to the deposition equipment (1) by the control device (4, 10) according to the signal. The invention also relates to equipment suitable for carrying out the method.
Description
Technical field
The present invention relates to a kind of deposition method and a kind of equipment that is suitable for carrying out the method for plasmaassisted, wherein the auxiliary deposition method of this plasma body comprises the deposition process of monitoring dielectric substance layer.The invention particularly relates to a kind of deposition method of plasmaassisted, the method has a kind of in-situ treatment control to the deposition of dielectric substance layer, for the production of solar cell.
Background technology
When the deposition of dielectric substance layer, on solar wafer as antireflection layer or passivation layer, by the PECVD(Plasma-enhanced chemical vapor deposition) or the PVD(physical vapor deposition) (such as magnetically controlled sputter method) for example aluminum oxide or silicon nitride of obtaining may cause the unstable of process, this it is to cause the sedimentation that can't be satisfied with.Reason may be the fluctuation of the mass rate of gas, the fluctuation of pressure process and/or the fluctuation of plasma efficiency, and this gas is being to be laughing gas in silane or ammonia or the situation at alumina layer in the situation of silicon nitride layer or trimethyl aluminium.The instable result of process is the fluctuation along the layer thickness of substrate carrier, and this may have a negative impact to efficient and the optical appearance (color printing) of solar cell.Because the measurement of efficient is at first carried out at a cell tester, so the process variation of this PECVD or PVD method at first can detect by significant time-delay after it occurs, this may cause the loss of product.
Up to now, the process variation on PECVD equipment is that mass rate, pressure, plasma efficiency and the temperature of for example processing gas by detecting important process parameter detects.Usually will export warning or warning when surpassing control limit (Regelgrenzen), when the control area is impaired within some time periods, this will cause process to be interrupted.But may cause during the course deviation to the detection of process parameter, for example when not noting between the latent period (a couple of days is to several weeks) at this equipment of portalling in the gas distribution of the processing gas (for example above mentioned gas silane or trimethyl aluminium) of constituting layer in the blocked situation.When the deposition of alumina layer, this may cause the fluctuation of the trimethyl aluminium flow that passes gas feed, still is difficult to notice this point from mass flow controller when beginning.Directly characterize by colour camera after the PECVD method at the silicon nitride antireflection layer on the wafer and passivation layer (typical layer thickness 80mm), found like this skew (or indirectly in addition skew of specific refractory power) of the layer thickness that (by hundreds of the statistic datas to thousands of the batteries) time is relatively near, and can the prescription of PECVD method have been mated in some cases.Yet the tolerance range of this color measuring is limited, for example can not pick out less refractive index fluctuation (Δ n=0.05 – 0.1).In the situation of alumina layer, because less layer thickness (about 10 – 30nm), it is difficult detecting by pick up camera.When also be mounted with a silicon nitride tectum on this external alumina layer, wherein this twice deposition is when finishing in same PECVD instrument, pick up camera can't differentiate whether an alumina layer is arranged under this silicon nitride tectum.Therefore, desirable be a kind of by plasmaassisted method and to the monitoring of dielectric substance layer deposition.
Summary of the invention
The objective of the invention is, a kind of deposition method of plasmaassisted is provided, the method can be monitored the deposition of dielectric substance layer effectively, but also a kind of equipment for carrying out the method is provided.
According to the present invention, this purpose realizes by method according to claim 1 and equipment according to claim 15.
Favourable embodiment of the present invention provides in each dependent claims.
The invention provides a kind of deposition method of plasmaassisted, be used at least one dielectric substance layer is deposited on a siliceous substrate, the method has following steps:
In a depositing device, supply at least a gas that is suitable for producing dielectric substance layer;
In at least one first wavelength or bands of a spectrum monitoring emissive porwer this gas, that in this depositing device, produce;
Depend on the emissive porwer of monitoring at least one the first wavelength or bands of a spectrum, produce a signal;
This signal is transferred at least one control device; And
Depend on this signal, control at least one process parameter that affects this deposition and/or this substrate is fed in this depositing device by this control device.
The method comprises that especially the monitoring dielectric substance layer is in this on-chip deposition.This dielectric substance layer will depend on that in this on-chip deposition process this signal carries out in-situ control.Especially in the process of this deposition method, this process parameter is adjusted to a predetermined value.This or these process parameter can be kept constant thus.Deposition can be carried out under constant condition, and causes a kind of uniform dielectric substance layer on this substrate carrier.Substituting or additionally, it is controlled that substrate is fed in this deposition apparatus.For example, when a process parameter and a predefined procedure parameter not at once, just stop or suspending new substrate load in this depositing device, until this process parameter is adjusted to this preset value.The method according to this invention provides the process monitoring that do not rely on up to now and/or in other monitoring modes (for example passing through Kamera) control possibility in addition.The purposes of the method according to this invention is to monitor better product, that is to say can find in early days in this process undesirable fluctuation and take appropriate measures, for example stopped process or regulate process parameter.This should cause higher efficient and better electricity and optical yields.Other advantages of the method according to this invention are, it is very quick, because can carry out process monitoring in the several seconds scope, and it is less than damage, because compare with additive method, plasma body is glitch-free, and this Monitoring systems is relatively inexpensive.
The depositing device that uses in the method according to the invention is a treatment chamber, for example a vacuum chamber.This treatment chamber is set to be used to the method that realizes a kind of plasmaassisted (such as PECVD) and has a window, can carry out monitoring to deposition process by this window.
On meaning of the present invention, it is a passivation layer or antireflection layer that a dielectric substance layer especially is interpreted as, for example an alumina layer or a silicon nitride layer.
Stood to can be used as it is according to this silicon-containing substrates of the inventive method.That is to say that this dielectric substance layer is that Direct precipitation is on-chip in this case.Substituting or additionally, this substrate can be by one or more layers of coating so that this dielectric substance layer not Direct precipitation on this substrate, be arranged on this substrate or on the coated on-chip layer but be deposited on one.For example can at first an alumina layer be deposited on this substrate, then deposit a silicon nitride layer.
This gas that is suitable for producing dielectric substance layer is a kind of like this gas preferably: it has formed this dielectric substance layer by the reaction with another kind of gas in the process of deposition method.For example this dielectric substance layer forms by the reaction of two kinds of gases, for example a kind of precursor and a kind of processing gas.
Statement " precursor " refers to a kind of gas, and this gas has formed the presoma of the layer that remains to be consisted of and consisted of this layer by the gas reaction with at least a gas.
Statement " processing gas " refers to a kind of gas, this gas otherwise for other gases that in deposition process, use be inertia and as carrier gas, or with this precursors reaction.
If this dielectric substance layer is alumina layer for example, can use trimethyl aluminium and oxygen or a kind of oxygen containing molecule-type gas (such as laughing gas or carbonic acid gas) in order to deposit so.In addition, in the process of deposition method, can also use a kind of rare gas element as carrier gas.For example with the carrier gas of argon gas as trimethyl aluminium.For deposited silicon nitride layer, can use silane and ammonia or oxygen and hydrogen as gas.
On meaning of the present invention, statement " wavelength " is a line in the optical emitting spectrum, and " bands of a spectrum " refer to the set of many adjacent lines.The wavelength of monitoring or bands of a spectrum preferably have with other wavelength or bands of a spectrum compares higher emissive porwer.On the one hand, have more wavelength or the easier detection of the deviation on the bands of a spectrum of high emission intensity, and on the other hand, every kind of gas all has higher emissive porwer at wavelength or the bands of a spectrum determined.For example, this at least one first wavelength or bands of a spectrum have at least 2000a.u.(atomic unit), preferred at least 4000a.u., preferred at least 6000a.u., the preferred at least emissive porwer of 8000a.u still.Have that more wavelength or the bands of a spectrum of high emission intensity will be pointed out as feature below.
A kind of mass rate of gas can the effect characteristics wavelength or the emissive porwer of bands of a spectrum.By this wavelength or bands of a spectrum, can easily detect the variation of the mass rate of this gas.For example when supply orifice stopped up, the mass rate of gas diminished or becomes inhomogeneous.By monitoring an emissive porwer relevant with mass rate, can easily pick out problems.So select as follows this first wavelength or bands of a spectrum: so that its emissive porwer depends on a kind of mass rate of the gas that uses in deposition.
In a preferred embodiment of the present invention, when this signal is below or above a predetermined threshold value, control the supply in this depositing device of this at least one process parameter and/or this substrate.That is to say, this at least one process parameter is not adjusted and/or in this depositing device in should the situation of substrate, tolerate the deviation of this process parameter, until be below or above this threshold value.In this tolerable zone, the layer of producing has satisfied the requirement that sets.
Preferably, this predetermined threshold value has formed with a predetermined emissive porwer and has compared approximately at least 10% deviation.In one embodiment of the invention, this predetermined emissive porwer is theoretical emissive porwer.This emissive porwer can depend on the mass rate of this gas.In this case, theoretical emissive porwer is easily to determine by the gas mass flow of setting in the process of the method or to learn.Alternatively, this default emissive porwer is the emissive porwer of measuring when this deposition process begins.With 10% deviation of this predetermined threshold value in most of the cases be permissible because this deposition process has generally produced receivable layer in this scope.Therefore, with respect to the emissive porwer that monitored before producing passivation layer and/or antireflection layer and/or determine in theory, the less variation of the emissive porwer that monitors in the process of producing passivation layer and/or antireflection layer is permissible.
A preferred embodiment of the inventive method is included in the emissive porwer that monitoring produces at least one second wave length or the bands of a spectrum in deposition process, and depends at this at least one first wavelength or the bands of a spectrum and the emissive porwer of monitoring at least one second wave length or the bands of a spectrum produces this signal.
Advantage in a second wave length or bands of a spectrum monitoring emissive porwer is, the emissive porwer of this first wavelength or bands of a spectrum and each in this second wave length or the bands of a spectrum can be compared, and that is to say that the emissive porwer of second wave length or bands of a spectrum can be used as reference.For example, can obtain a merchant of the emissive porwer of these two wavelength or bands of a spectrum, and this commercialization be made the tolerance of predetermined threshold.
Also might for two kinds of gases that adopt, monitor respectively the emissive porwer at a characteristic wavelength or bands of a spectrum place.That is to say, when having higher emissive porwer when having higher emissive porwer for this first wavelength of a kind of the first gas that adopts or bands of a spectrum and for a kind of this second wave length of the second gas that adopts or bands of a spectrum, can determine so these two kinds of gases the variation of mass rate have occured and corresponding gas is reset in which kind of situation.This has for example following purposes: obtain relative to each other two kinds and process the process parameter of gases and not only assess a kind of process parameter of gas but can obtain two kinds of gases ratio relative to each other, and whether monitoring has two kinds of gases of pending reaction by the optimal ratio supply thus.
For example, when aluminum oxide layer, in the situation of using trimethyl aluminium and laughing gas, for example can select for trimethyl aluminium be distinctive, at the H-of 656nm α-line as the first wavelength or bands of a spectrum, and for example select for laughing gas be distinctive, the laughing gas bands of a spectrum of 658nm or at the oxygen line of 777nm as second wave length or bands of a spectrum.Above-mentioned wavelength and above-mentioned bands of a spectrum have respectively higher emissive porwer for other wavelength or bands of a spectrum.
This at least one second wave length or bands of a spectrum preferably have the spacing of with this at least one first wavelength or the maximum 200mm of bands of a spectrum.This first wavelength or bands of a spectrum and this second wave length or bands of a spectrum the closer to, the comparability of these wavelength or bands of a spectrum is better.Undesired signal causes the probability of pseudo-emissive porwer (for example leading to absorption on the view port for the treatment of chamber, that depend on wavelength owing to deposit) also less.
When depending on that the emissive porwer that monitors produces signal, preferably formed a merchant by the emissive porwer of monitoring.Preferably so select the emissive porwer of monitoring: so that between the mass rate of this merchant and a kind of cambial gas, produce linear dependence.
This for example is following situation: when this first emissive porwer of monitoring is the mass rate that depends on this precursor, and randomly depends on the mass rate of this processing gas, and the second emissive porwer that this is monitored does not relatively rely on this precursor and mass rate this processing gas.Under a kind of linear dependence, can easily determine the deviation with predetermined threshold.
For example when aluminum oxide layer, in the situation of using trimethyl aluminium and laughing gas, formed by at the oxygen line of 777nm with the merchant of the emissive porwer at the laughing gas bands of a spectrum place of 658nm.With mass rate laughing gas and noticeable change, and the emissive porwer at laughing gas bands of a spectrum place obviously less depends on the mass rate of trimethyl aluminium to the emissive porwer at this oxygen line place according to trimethyl aluminium.Adopt independently (namely constant) emissive porwer, as to the reference of dependent variable transmission intensity is arranged.
Substituting or additionally, when aluminum oxide layer, in the situation of using trimethyl aluminium and laughing gas, formed by at the H-of 656nm α-line with the merchant of the emissive porwer at the laughing gas bands of a spectrum place of 658nm.The emissive porwer at H-α-line place depends on the mass rate of trimethyl aluminium, but does not rely on the mass rate of laughing gas.The laughing gas bands of a spectrum only depend on the mass rate of trimethyl aluminium rarely.Constant emission intensity on the laughing gas bands of a spectrum is as inner reference, in order to show the mass rate that may change and show thus trimethyl aluminium of the emissive porwer at H-α-line place.Simultaneously, this inside reference also is used for getting rid of interference possible when measuring emissive porwer.Interference when measuring optical emission spectra might also can change the emissive porwer at laughing gas bands of a spectrum place.
In the deposition method process, can monitor emissive porwers more than two wavelength places.When for deposit dielectric matter layer two kinds of gases being reacted, can monitor for this first and second gas respectively in first wavelength or bands of a spectrum and second wave length or bands of a spectrum place, that is to say the emissive porwer of monitoring in the case on four wavelength or bands of a spectrum.
In a preferred embodiment, the method according to this invention comprises: when this signal is below or above predetermined threshold value, stops on this substrate this dielectric substance layer of deposition and/or supply substrate in this depositing device by this control device.Stopping this deposition process makes it possible to determine possible disabler reason (for example obstruction of gas feed line), eliminate this reason and come the operating device state by the operator.In addition, stopping this deposition process has prevented from forming a layer that does not meet the demands at this substrate.When being below or above predetermined threshold value, stop this deposition process.
The method according to this invention preferably includes: undertaken by this control device stop the action after, regulate this at least one process parameter; Continuation is at substrate this dielectric substance layer of deposition and/or supply substrate in depositing device; Monitor the emissive porwer that in this depositing device, produces at first wavelength or bands of a spectrum; Depend on that the emissive porwer that monitors produces a signal; And depend on this signal and control this at least one process parameter and/or the substrate supply in this depositing device by this control device.After stopping this deposition process, after at least one process parameter is adjusted to desirable preset parameter, proceed this deposition process and monitoring thereof.
Warning signal of output when the method preferably also is included in and stops by this control device.This warning signal be for example be used for notification operator deposition process occurred problem, need to equipment control and/or this substrate may be apply mistakenly and may produce waste product.
In a preferred embodiment of the invention, the deposition at this on-chip at least one dielectric substance layer comprises a plurality of layers of deposition.This at least one first wavelength or bands of a spectrum, this optional predetermined threshold and at least one second wave length that should be optional or bands of a spectrum are to depend on respectively the layer that remains to be deposited and select.For example can at first an alumina layer be deposited on this substrate, then settle a silicon nitride layer.In order to form this alumina layer, for example used trimethyl aluminium as stratification precursor and laughing gas as processing gas, and in order to form this silicon nitride layer, use silane as stratification precursor and ammonia as processing gas.Every kind of gas has optional emmission spectrum, and this emmission spectrum is with distinctive wavelength or bands of a spectrum.In the deposition process of alumina layer, this is first and optional second wave length or bands of a spectrum and should optional threshold value being selected as corresponding to gases used more high-grade emissive porwer years old, and in the deposition process of silicon nitride layer, this is first and optional second wave length or bands of a spectrum and should optional threshold value being selected as equally corresponding to gases used more high-grade emissive porwer years old.
In a preferred embodiment of the present invention, the step of controlling at least one process parameter comprises the supply of a kind of stratification precursor of control in this depositing device.This precursor is conclusive for forming uniform layer and layer thickness.
In a preferred embodiment, precursor is trimethyl aluminium, and processing gas is oxygen or oxygen containing molecular gas, for example laughing gas or carbonic acid gas.Can use argon gas as carrier gas.Use in the method in the situation of these gases, formed an alumina layer at this substrate.In another preferred embodiment, precursor is silane, and to process gas be ammonia or the mixture that is comprised of nitrogen and hydrogen.This method causes forming a silicon nitride layer at this substrate.In this deposition method, preferably at first alumina layer is deposited on the substrate, and then deposits a silicon nitride layer.
In a preferred embodiment, this at least one first wavelength or bands of a spectrum are hydrogen spectral line H-β (486.1nm) of the hydrogen spectral line H-α (656.3nm) of balmer series or balmer series or at the oxygen spectral line (2s of 777nm
22p
3(
4S
0) 3s-2s
22p
3(
4S
0) 3p).When adopting trimethyl aluminium as the stratification precursor, it is especially favourable selecting the hydrogen spectral line H-α (656.3nm) of balmer series.When adopting silane as the stratification precursor, selecting the hydrogen spectral line H-β (486.1nm) of balmer series is preferred as the first wavelength.When adopting laughing gas as processing gas, the oxygen spectral line that is chosen in 777nm is preferred as the first wavelength.
The method according to this invention especially is suitable as the manufacture of solar cells method of the deposition process with a plasmaassisted.It also is suitable for producing thin-layer solar cell.The method according to this invention is preferred for the production silicon wafer solar cells.Preferably deposit an aluminum oxide or one or more silicon nitride layer by the method according to this invention at silicon wafer.
Be suitable for comprising at the equipment according to the present invention of at least one dielectric substance layer of silicon-containing substrates deposition: a depositing device that is used at least one layer of deposition; At least one feeding mechanism is used for supplying at least a gas that is suitable for producing this dielectric substance layer; A running gear is used for for should substrate; A monitoring equipment is used for monitoring the emissive porwer that produces at this depositing device at least one first wavelength or bands of a spectrum; Be used for depending on that emissive porwer that at this at least one first wavelength or bands of a spectrum place monitor produces the device of a signal; And at least one control device, at least one affects the process parameter of this sedimentation and/or controls this substrate to the loading of depositing device to be used for control.
This depositing device is a treatment chamber preferably, such as a vacuum chamber.Equipping this treatment chamber is to have for a window that can monitor this deposition process be used to the deposition process of carrying out a kind of plasmaassisted and this treatment chamber.
Be used at least one at least one feeding mechanism that is suitable for producing this dielectric substance layer of supply and preferably include the conduit that at least one is suitable for supply gas, this conduit can be regulated by a valve and a mass flow controller.
Be used for comprising a for example gripper arms (Greifarm) of a feeding mechanism for running gear that should substrate that this gripper arms can be arranged in substrate on the section that (English be carrier (Carrier)) of a substrate bearing framework be complementary.Then, this substrate bearing framework is by a vacuum lock chamber or directly is transferred in this treatment chamber, for example by one or more travelling belts.The opening of vacuum lock chamber or the movement of this travelling belt can be controlled by an external signal.
This monitoring equipment that is used for the emissive porwer that produces at this depositing device in first wavelength or bands of a spectrum monitoring preferably the wall of this treatment chamber comprise a plasma body view port, collimating lens or fiber optic system in case with the light emission decoupling of this plasma body to light wave guide, light wave guide and a spectrograph (UV-VIS-NIR).
Be used for depending on that the device that emissive porwer that at this at least one first wavelength or bands of a spectrum place monitor produces signal preferably includes an electronic regulator.
At least one affects the process parameter of this sedimentation and/or controls this substrate and this at least one control device of the loading of depositing device is preferably included at least one is used for to the treatment chamber supply gas and to the control device of this depositing device load substrates to be used for control.Can control independently of one another to the treatment chamber supply gas and to this depositing device load substrates.
Description of drawings
Describe the present invention in detail referring now to accompanying drawing, and the present invention is not limited to this.
Accompanying drawing shows:
Fig. 1 is according to an indicative icon of the principle of adjusting circulation of the present invention;
Chart of Fig. 2 has been showed the comparison of emmission spectrum (wavelength is to intensity) with the emmission spectrum of laughing gas plasma body of laughing gas-argon gas-trimethyl aluminium plasma body;
Chart of Fig. 3 has been showed the emmission spectrum (wavelength is to intensity) of laughing gas-argon gas with different laughing gas mass rates-trimethyl aluminium plasma body;
Chart of Fig. 4 has been showed spectral line (777nm) and the N of atomic oxygen
2The ratio of O bands of a spectrum (658nm) is with the dependence of laughing gas gas mass flow;
Chart of Fig. 5 has been showed the emmission spectrum (wavelength is to intensity) under different trimethyl aluminium mass rates;
Chart of Fig. 6 has been showed the H-α line (656nm) of atomic hydrogen and adjacent N
2The ratio of O bands of a spectrum (658nm) is with the dependence of trimethyl aluminium gas mass flow;
Chart of Fig. 7 has been showed the emmission spectrum (wavelength is to intensity) under different trimethyl aluminium mass rates; And
Chart of Fig. 8 has been showed under the trimethyl aluminium mass rate that changes the dependence of the ratio of oxygen line (777nm) and laughing gas bands of a spectrum (658nm).
Embodiment
Fig. 1 has showed an indicative icon according to the principle of adjusting circulation of the present invention, comprise a vacuum chamber 1(treatment chamber) as depositing device, a plasma body 2, a wafer (c-Si-wafer) that has substrate to be coated 3 for example to be made by crystalline silicon, a control device 4 that is used for loading with substrate 3 vacuum chamber, hereinafter referred to as add load control 4, a plasma body view port 5 on this vacuum chamber 1 wall, be used for collimating lens 6 or fiber optic system with light emission decoupling to a light wave guide 7 of this plasma body, this light wave guide 7, a spectrograph (UV-VIS-NIR) 8, an electronic regulator 9, one is used for being used for controlling corresponding mass rate to the control device 10(of vacuum chamber supply gas), hereinafter referred to as gas feeding controller 10, entrance 11 for the treatment of gas, hereinafter referred to as processing gas inlet 11, and an entrance 12 that is used for precursor, hereinafter referred to as precursor entrance 12.
For executive basis method of the present invention, supply department regulate the flow of vital energy body and precursor in the vacuum chamber 1.Produced plasma body 2.Monitor the emissive porwer of institute's supply gas by plasma body view port 5, collimating lens 6, light wave guide 7 and spectrograph 8.Electronic regulator 9 has produced a signal, and this signal depends on the intensity of a characteristic wavelength or bands of a spectrum or the ratio of two characteristic wavelengths or bands of a spectrum.This signal is delivered to add load control 4 and gas feeding controller 10.
Be to be in outside the prescribed value when this signal shows process parameter to add load control 4 and/or gas feeding controller 10, then gas feeding controller 10 is attempted regulating as follows these process parameters: so that they are in the scope of this prescribed value.If this is impossible for gas feeding controller 10, gas feeding controller 10 just stops the gas supply and exports a warning signal so.In suitable situation, add load control 4 stops the supply of substrate 3 in the vacuum chamber 1.In this case, equipment state be by operator control and started a kind of equipment scheme that is complementary (Anlagenrezept).
To be in the scope of prescribed value when this signal shows process parameter to add load control 4 and/or gas feeding controller 10, the then loading of add load control 4 control substrates in the depositing device 1.In the process that applies this substrate, also monitor as described above this deposition process.
Fig. 2 has showed a chart, is the comparison of emmission spectrum (wavelength is to intensity) with the emmission spectrum of laughing gas plasma body of laughing gas-argon gas-trimethyl aluminium plasma body.The mass rate of laughing gas-argon gas-trimethyl aluminium-plasma body is as follows: N
2O:Ar: trimethyl aluminium=900:450:100sccm(standard cubic centimeter).The mass rate of laughing gas plasma body is 900sccm.As can be seen, these gases are attached troops to a unit has some to have more wavelength or the bands of a spectrum of high emission intensity.Wavelength with very high emissive porwer is at the H-of 656.3nm α line (trimethyl aluminium), at the oxygen spectral line (laughing gas) of 777nm with at the Ar of 750nm line (argon gas).Sharp-pointed peak is atom line, that is to say that they indicate a kind of atomic transition attitude, and bands of a spectrum represents the molecule transition state.
Fig. 3 has showed a chart, has showed the emmission spectrum (wavelength is to intensity) of laughing gas-argon gas with different laughing gas mass rates-trimethyl aluminium plasma body.The mass rate of argon gas is 450sccm.The mass rate of trimethyl aluminium is 100sccm.The mass rate of laughing gas is 500sccm, 700sccm, 900sccm, 1100sccm, 1300sccm and 1500sccm.As shown in Figure 3, when the mass rate of argon gas and trimethyl aluminium keeps constant, the variable effect of the mass rate of laughing gas atom line such as oxygen line, and molecular spectrum only is subject to inapparent impact.
Fig. 4 has showed a chart, is the spectral line (777nm) of atomic oxygen and adjacent N
2The ratio of O bands of a spectrum (658nm) is with the dependence of laughing gas gas mass flow; As can be seen from Figure 4, this dependence is linear.Come the atom oxygen concentration is carried out convergent-divergent with the laughing gas mass rate.As seen from Figure 3, the emissive porwer of laughing gas bands of a spectrum is more uncorrelated with the mass rate of laughing gas, and the emissive porwer of oxygen line increases along with the rising of laughing gas mass rate.
Fig. 5 has showed a chart, has showed the emmission spectrum (wavelength is to intensity) under different trimethyl aluminium mass rates.Under different trimethyl aluminium mass rates, emissive porwer changes.The intensity of laughing gas bands of a spectrum is inversely proportional with the trimethyl aluminium mass rate.Increase along with the mass rate of trimethyl aluminium and raise in the intensity at the H-of 656nm α line place.
Fig. 6 has showed a chart, has showed the H-α line (656nm) of atomic hydrogen and adjacent N
2The ratio of O bands of a spectrum (658nm) is with the dependence of trimethyl aluminium gas (TMA) mass rate; The ratio of the H-α line of atomic hydrogen and adjacent laughing gas bands of a spectrum is with the mass rate linear dependence of trimethyl aluminium.The mass rate of trimethyl aluminium is larger, and the H-α line of atomic hydrogen and the ratio of adjacent laughing gas bands of a spectrum are larger.The emissive porwer of laughing gas bands of a spectrum is constant under different trimethyl aluminium mass rates, but along with the mass rate of trimethyl aluminium increases, the intensity of the H-α line of atomic hydrogen increases, as seen from Figure 5.
Fig. 7 has showed a chart, has showed argon gas under different trimethyl aluminium mass rates and the emmission spectrum (wavelength is to intensity) of laughing gas.As can be seen, along with the rising of trimethyl aluminium mass rate, the emissive porwer of oxygen line reduces.Its reason is to have consumed oxygen when forming alumina layer with the trimethyl aluminium reaction.
Fig. 8 has showed a chart, has showed under the trimethyl aluminium mass rate that changes the dependence of the ratio of oxygen line (777nm) and laughing gas bands of a spectrum (657.9nm).The intensity of strong oxygen line descend along with increasing of trimethyl aluminium mass rate (be that index descend with respect to the loudness of laughing gas bands of a spectrum).For example when producing alumina layer with trimethyl aluminium and laughing gas, be chosen in the oxygen spectral line of 777nm as the first wavelength, and the laughing gas bands of a spectrum that are chosen in 657.9nm are as second wave length.In order to control this deposition process, produced merchant I777/I6579.From this chart, can read out in theory and the predetermined merchant under the different trimethyl aluminium mass rates.The threshold value that can obtain to be scheduled to by this chart.The reference number inventory:
1 vacuum chamber (treatment chamber)
2 plasma bodys
3 have substrate to be coated (c-Si wafer)
4 are used for loading with substrate/wafer the control device of this vacuum chamber
5 plasma body view ports on this vacuum-chamber wall
6 are used for the light emission decoupling of plasma body collimating lens or the fiber optic system to light wave guide 7
7 light wave guides
8 spectrographs (UV-VIS-NIR)
9 electronic regulators
10 are used for the control device to the vacuum chamber supply gas
11 process the gas inlet
12 (stratification) precursor entrance
Claims (15)
1. the deposition method of a plasmaassisted is used at least one dielectric substance layer is deposited on a siliceous substrate (3), and the method has following steps:
In a depositing device (1), supply at least a gas that is suitable for producing this dielectric substance layer;
In at least one first wavelength or bands of a spectrum monitoring emissive porwer this gas, that in this depositing device (1), produce;
Depend on the emissive porwer that at this at least one first wavelength or bands of a spectrum are monitored, produce a signal;
This signal is transferred at least one control device (4,10);
Depend on this signal, control the supply in this depositing device (1) of at least one process parameter that affects this deposition and/or this substrate (3) by this control device (4,10).
2. the method for claim 1 is characterized in that, when this signal is below or above a predetermined threshold value, controls the supply in this depositing device of this at least one process parameter and/or this substrate (3).
3. method as claimed in claim 2 is characterized in that, this predetermined threshold value has formed with a predetermined emissive porwer and compared approximately at least 10% depart from.
4. according to any one of the preceding claims method is characterized in that,
The emissive porwer of generation in this depositing device (1) at least one second wave length or bands of a spectrum monitoring; And
Depend on that the emissive porwer that monitors at this at least one first wavelength or bands of a spectrum and this at least one second wave length or the bands of a spectrum produces this signal.
5. method as claimed in claim 4, wherein this at least one second wave length or bands of a spectrum have the spacing of with this at least one first wavelength or the maximum 200mm of bands of a spectrum.
6. such as claim 4 or 5 described methods, it is characterized in that, when depending on that the emissive porwer that monitors produces this signal, formed a merchant by these emissive porwers that monitor.
7. according to any one of the preceding claims method is characterized in that,
When this signal is below or above this predetermined threshold value, stop deposition and/or this substrate (3) the conveying to this depositing device (1) in of this dielectric substance layer on this substrate (3) by this control device (4,10).
8. method as claimed in claim 7 is characterized in that,
By this control device (4,10) carry out stop after, regulate this at least one process parameter;
Confession should substrate (3) at this dielectric substance layer of substrate (3) deposition and/or in this depositing device (1) in continuation;
The emissive porwer of generation in this depositing device (1) at least one first wavelength or bands of a spectrum monitoring;
Depend on that the emissive porwer that monitors produces a signal;
This signal is transferred at least one control device (4,10);
Depend on this signal, control the supply in this depositing device (1) of at least one process parameter that affects this deposition and/or this substrate (3) by this control device (4,10).
9. such as claim 7 or 8 described methods, it is characterized in that,
When stopping, exporting a warning signal by this control device (4,10).
10. according to any one of the preceding claims method, it is characterized in that, the deposition of at least one dielectric substance layer on this substrate (3) comprises a plurality of layer of deposition, and this at least one first wavelength or bands of a spectrum, this optional predetermined threshold and at least one second wave length that should be optional or bands of a spectrum are respectively to depend on the layer that remains to be deposited and select.
11. method according to any one of the preceding claims is characterized in that, this step of controlling at least one process parameter comprises the supply of a kind of stratification precursor of control in this depositing device.
12. method as claimed in claim 11 is characterized in that, this precursor is trimethyl aluminium, and this processing gas is oxygen or a kind of oxygen containing molecular gas; And/or this precursor is silane, and this processing gas is ammonia or a kind of mixture that is comprised of nitrogen and hydrogen.
13. method according to any one of the preceding claims, it is characterized in that this at least one first wavelength or bands of a spectrum are hydrogen spectral line H-β (486.1nm) of the hydrogen spectral line H-α (656.3nm) of balmer series or balmer series or at the oxygen spectral line O(2s of 777nm
22p
3(
4S
0) 3s-2s
22p
3(
4S
0) 3p).
14. a manufacture of solar cells method, the method has the deposition method of plasmaassisted according to any one of the preceding claims.
15. an equipment that is suitable at least one dielectric substance layer of silicon-containing substrates (3) deposition, this equipment comprises:
A depositing device (1) that is used at least one layer of deposition;
At least one feeding mechanism (11,12) is used for supplying at least a gas that is suitable for producing this dielectric substance layer;
One is used for for running gear that should substrate (3);
A monitoring device is used for monitoring the emissive porwer that produces at this depositing device (1) at least one first wavelength or bands of a spectrum;
Be used for depending on that the emissive porwer that monitors at least one the first wavelength or bands of a spectrum produces a device (9) of a signal; And
At least one control device (4,10), at least one affects the process parameter of this sedimentation and/or controls this substrate (3) to the loading of this depositing device (1) to be used for control.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011051226.8 | 2011-06-21 | ||
| DE201110051226 DE102011051226A1 (en) | 2011-06-21 | 2011-06-21 | Plasma-assisted deposition for depositing dielectric layer on silicon-containing substrate, useful for manufacturing a solar cell, comprises e.g. supplying a gas, monitoring an emission intensity of gas, and controlling a process parameter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102864438A true CN102864438A (en) | 2013-01-09 |
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ID=47321099
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102077649A Pending CN102864438A (en) | 2011-06-21 | 2012-06-21 | Plasma-assistant deposition method and equipment for carrying out same |
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| CN (1) | CN102864438A (en) |
| DE (1) | DE102011051226A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210151285A1 (en) * | 2019-11-15 | 2021-05-20 | Tokyo Electron Limited | Temperature measurement system, temperature measurement method, and substrate processing apparatus |
| US11972921B2 (en) * | 2019-11-15 | 2024-04-30 | Tokyo Electron Limited | Temperature measurement system, temperature measurement method, and substrate processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1030615A (en) * | 1987-07-15 | 1989-01-25 | 美国Boc集团有限公司 | The control of plasma thin film deposition process |
| JPH09181050A (en) * | 1995-12-26 | 1997-07-11 | Sharp Corp | Plasma treatment equipment and plasma treating method |
| CN101165205A (en) * | 2006-10-18 | 2008-04-23 | 甘国工 | Method and device for coating anti reflection passive film on crystal silicon solar cell sheet |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8460945B2 (en) * | 2003-09-30 | 2013-06-11 | Tokyo Electron Limited | Method for monitoring status of system components |
| DE102009042103B4 (en) * | 2009-09-21 | 2013-01-31 | Innovent E.V. | Method of treating a surface |
-
2011
- 2011-06-21 DE DE201110051226 patent/DE102011051226A1/en not_active Ceased
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- 2012-06-21 CN CN2012102077649A patent/CN102864438A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1030615A (en) * | 1987-07-15 | 1989-01-25 | 美国Boc集团有限公司 | The control of plasma thin film deposition process |
| JPH09181050A (en) * | 1995-12-26 | 1997-07-11 | Sharp Corp | Plasma treatment equipment and plasma treating method |
| CN101165205A (en) * | 2006-10-18 | 2008-04-23 | 甘国工 | Method and device for coating anti reflection passive film on crystal silicon solar cell sheet |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210151285A1 (en) * | 2019-11-15 | 2021-05-20 | Tokyo Electron Limited | Temperature measurement system, temperature measurement method, and substrate processing apparatus |
| US11972921B2 (en) * | 2019-11-15 | 2024-04-30 | Tokyo Electron Limited | Temperature measurement system, temperature measurement method, and substrate processing apparatus |
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| Publication number | Publication date |
|---|---|
| DE102011051226A1 (en) | 2012-12-27 |
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