US20210151285A1 - Temperature measurement system, temperature measurement method, and substrate processing apparatus - Google Patents
Temperature measurement system, temperature measurement method, and substrate processing apparatus Download PDFInfo
- Publication number
- US20210151285A1 US20210151285A1 US17/089,949 US202017089949A US2021151285A1 US 20210151285 A1 US20210151285 A1 US 20210151285A1 US 202017089949 A US202017089949 A US 202017089949A US 2021151285 A1 US2021151285 A1 US 2021151285A1
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- substrate
- temperature
- thickness
- rotary table
- substrates
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- 238000005259 measurement Methods 0.000 claims description 21
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- 239000010453 quartz Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
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- 238000004364 calculation method Methods 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
- G01D5/347—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
- G01D5/3473—Circular or rotary encoders
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
- G01K11/125—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance using changes in reflectance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
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- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
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- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
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- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Definitions
- the present disclosure relates to a temperature measurement system, a temperature measurement method, and a substrate processing apparatus.
- a temperature measurement system includes: a thickness calculating unit configured to irradiate a measurement light on a substrate among a plurality of substrates placed along a rotation direction of a rotary table and calculate an optical thickness of each of the substrates based on a reflected light of the measurement light; a rotation position detecting unit configured to detect rotation position information of the rotary table; a substrate specifying unit configured to specify a substrate of which the optical thickness has been calculated by the thickness calculating unit, based on the rotation position information detected by the rotation position detecting unit; a storage unit configured to store first relationship information indicating a relationship between a temperature and a thickness associated with each of the plurality of substrates, and second relationship information indicating a relationship between an amount of change in temperature and an amount of change in optical thickness associated with each of the plurality of substrates; and a temperature calculating unit configured to calculate a temperature of the substrate based on the optical thickness calculated by the thickness calculating unit, the substrate specified by the substrate specifying unit, the first relationship information,
- FIG. 1 is a configuration diagram of a temperature measurement system of an embodiment and a substrate processing apparatus using the system.
- FIG. 2 is a perspective view of an internal structure of the substrate processing apparatus in FIG. 1 .
- FIG. 3 is a top view of an internal structure of the substrate processing apparatus in FIG. 1 .
- FIG. 4 is a cross-sectional view taken along the concentric circles of the rotary table of the substrate processing apparatus in FIG. 1 .
- FIG. 5 is a cross-sectional view illustrating a region where a ceiling surface of a processing container of the substrate processing apparatus in FIG. 1 is provided.
- FIG. 6 is a diagram illustrating an example of a thickness calculating unit.
- FIG. 7 is a flowchart illustrating an example of a temperature measurement method according to the temperature measurement system of the embodiment.
- FIG. 1 is a configuration diagram of a temperature measurement system of an embodiment and a substrate processing apparatus using the system.
- FIG. 2 is a perspective view of an internal structure of the plasma processing apparatus in FIG. 1
- FIG. 3 is a top view of the internal structure of the plasma processing apparatus in FIG. 1 .
- the substrate processing apparatus processes a substrate while rotating a rotary table
- various substrate processing apparatuses may be applied to such a process.
- the substrate processing apparatus is configured as a film forming apparatus.
- the film forming apparatus includes a flat vacuum container 1 having a substantially circular planar shape, and a rotary table 2 provided in the vacuum container 1 and having a rotation center at the center of the vacuum container 1 .
- the vacuum container 1 is a processing chamber in which the inside may be depressurized, and for accommodating a substrate W to be processed and performing a film forming process on the substrate W.
- the substrate W may be a substrate such as, for example, silicon (Si), quartz (SiO 2 ), silicon carbide (SiC), a low-resistance substrate, or sapphire.
- the vacuum container 1 includes a container body 12 having a bottomed cylindrical shape, and a top plate 11 that is airtightly and detachably placed on the upper surface of the container body 12 via a seal member 13 such as, for example, an O-ring (see, e.g., FIG. 1 ).
- the rotary table 2 is a stage on which the substrate W is placed.
- the rotary table 2 includes a recess 24 having a depression shape on the surface thereof, and supports the substrate on the recess 24 .
- FIG. 1 a state in which the substrate W is placed on the recess 24 is illustrated.
- the rotary table 2 is made of, for example, quartz and is fixed to a cylindrical core portion 21 at a central portion.
- the core portion 21 is fixed to the upper end of a rotating shaft 22 extending in the vertical direction.
- the rotating shaft 22 penetrates a bottom portion 14 of the vacuum container 1 , and the lower end thereof is attached to a motor 23 that rotates the rotating shaft 22 (see, e.g., FIG. 1 ) around a vertical axis.
- the rotating shaft 22 and the motor 23 are accommodated in a tubular case body 20 having an open upper surface.
- a flange portion provided on the upper surface of the case body 20 is airtightly attached to the lower surface of the bottom portion 14 of the vacuum container 1 , and an airtight state between the internal atmosphere and the external atmosphere of the case body 20 is maintained.
- the motor 23 is provided with an encoder 25 so that the rotation angle of the rotating shaft 22 may be detected.
- the encoder 25 is used as a rotation position detecting unit that specifies the position of the substrate W placed in the recess 24 on the rotary table 2 .
- the surface of the rotary table 2 is provided with circular recesses 24 that place a plurality of substrates W (five substrates in the illustrated example) along the rotation direction (circumferential direction).
- FIG. 3 illustrates the substrate W placed only in a single recess 24 for convenience.
- the recess 24 has an inner diameter slightly greater than the diameter of the substrate W by, for example, 4 mm, and a depth substantially equal to or greater than the thickness of the substrate W. Therefore, when the substrate W is accommodated in the recess 24 , the surface of the substrate W and the surface of the rotary table 2 (the region where the substrate W is not placed) have the same height, or the surface of the substrate W becomes lower than the surface of the rotary table 2 .
- the depth of the recess 24 is greater than the thickness of the substrate W, when the depth is set to be too great, the film formation is affected. Thus, it is preferable to set the depth to about three times the thickness of the substrate W.
- through holes are formed through which, for example, three lifting pins for supporting the back surface of the substrate W and raising and lowering the substrate W pass.
- FIGS. 2 and 3 are views for explaining the structure inside the vacuum container 1 , and the top plate 11 is omitted for convenience of explanation.
- reaction gas nozzles 31 and 32 made of, for example, quartz and separation gas nozzles 41 and 42 , respectively, are placed above the rotary table 2 at intervals in the circumferential direction of the vacuum container 1 (the rotation direction of the rotary table 2 (see the arrow A in FIG. 3 )).
- the separation gas nozzle 41 , the reaction gas nozzle 31 , the separation gas nozzle 42 , and the reaction gas nozzle 32 are placed in this order in the clockwise direction (rotation direction of the rotary table 2 ) from a transfer port 15 described later.
- the reaction gas nozzles 31 and 32 are introduced into the vacuum container 1 from an outer peripheral wall of the vacuum container 1 by fixing gas introduction ports 31 a and 32 a, which are the base ends, to the outer peripheral wall of the container body 12 , and are attached to extend horizontally with respect to the rotary table 2 along the radial direction of the container body 12 .
- the reaction gas nozzle 31 is connected to a first reaction gas supply source (not illustrated) via a pipe (not illustrated) and a flow rate controller.
- the reaction gas nozzle 32 is connected to a second reaction gas supply source (not illustrated) via a pipe (not illustrated) and a flow rate controller.
- a plurality of gas discharge holes 33 that opens toward the rotary table 2 (see, e.g., FIG. 4 ) is placed along the length direction of the reaction gas nozzles 31 and 32 , for example, at intervals of 10 mm.
- a lower region of the reaction gas nozzle 31 is a first processing region P 1 that adsorbs a first reaction gas on the substrate W.
- a lower region of the reaction gas nozzle 32 is a second processing region P 2 in which the first reaction gas adsorbed on the substrate W and the second reaction gas react with each other in the first processing region P 1 .
- the separation gas nozzles 41 and 42 are introduced into the vacuum container 1 from an outer peripheral wall of the vacuum container 1 by fixing gas introduction ports 41 a and 42 a, which are the base ends, to the outer peripheral wall of the container body 12 , and are attached to extend horizontally with respect to the rotary table 2 along the radial direction of the container body 12 .
- the separation gas nozzles 41 and 42 are all connected to, for example, a nitrogen (N 2 ) gas supply source (not illustrated) as a separation gas via a pipe (not illustrated) and a flow rate control valve.
- N 2 nitrogen
- two convex portions 4 are provided in the vacuum container 1 . Since the convex portion 4 constitutes a separation region D together with the separation gas nozzles 41 and 42 , the convex portion 4 is attached to the back surface of the top plate 11 so as to protrude toward the rotary table 2 as described later. Further, the convex portion 4 has a fan-shaped planar shape whose top is cut into an arc shape. In the present embodiment, the inner arc is connected to a protrusion 5 (to be described later) and the outer arc is placed along the inner peripheral surface of the container body 12 of the vacuum container 1 .
- FIG. 4 illustrates a cross section of the vacuum container 1 along the concentric circles of the rotary table 2 from the reaction gas nozzle 31 to the reaction gas nozzle 32 .
- the convex portion 4 is attached to the back surface of the top plate 11 . Therefore, in the vacuum container 1 , there are a first ceiling surface 44 , which is a flat low ceiling surface which is the lower surface of the convex portion 4 , and a second ceiling surface 45 , which is located on both sides of the first ceiling surface 44 in the circumferential direction and is higher than the first ceiling surface 44 .
- the first ceiling surface 44 has a fan-shaped planar shape whose top is cut into an arc shape. Further, as illustrated in the figure, a groove 43 configured to extend in the radial direction is formed in the convex portion 4 at the center in the circumferential direction, and the separation gas nozzle 42 is accommodated in the groove 43 . A groove 43 is also formed in the other convex portion 4 , and the separation gas nozzle 41 is accommodated in the groove 43 .
- reaction gas nozzles 31 and 32 are provided in the space below the second ceiling surface 45 , respectively.
- the reaction gas nozzles 31 and 32 are provided in the vicinity of the substrate W to be spaced apart from the second ceiling surface 45 .
- the reaction gas nozzle 31 is provided in a space 481 on the right side below the second ceiling surface 45
- the reaction gas nozzle 32 is provided in a space 482 on the left side below the second ceiling surface 45 .
- a plurality of discharge holes 42 h that opens toward the rotary table 2 is placed along the length direction of the separation gas nozzle 42 , for example, at intervals of 10 mm.
- a plurality of discharge holes 41 h that opens toward the rotary table 2 is placed along the length direction of the separation gas nozzle 41 , for example, at intervals of 10 mm.
- the first ceiling surface 44 forms a separation space H, which is a narrow space, with respect to the rotary table 2 .
- N 2 gas is supplied from the discharge hole 42 h of the separation gas nozzle 42 , the N 2 gas flows toward the spaces 481 and 482 through the separation space H.
- the pressure of the separation space H may be made higher than the pressure of the spaces 481 and 482 by the N 2 gas. That is, the separation space H having a high pressure is formed between the spaces 481 and 482 .
- the N 2 gas flowing from the separation space H to the spaces 481 and 482 acts as a counterflow to the first reaction gas from the first processing region P 1 and the second reaction gas from the second processing region P 2 . Therefore, the first reaction gas from the first processing region P 1 and the second reaction gas from the second processing region P 2 are separated by the separation space H. As a result, it is suppressed that the first reaction gas and the second reaction gas are mixed and reacted in the vacuum container 1 .
- a height h 1 of the first ceiling surface 44 with respect to the upper surface of the rotary table 2 is set to a height suitable for making the pressure of the separation space H higher than the pressure of the spaces 481 and 482 , in consideration of the pressure in the vacuum container 1 at the time of film formation, the rotation speed of the rotary table 2 , and the flow rate of the separated gas to be supplied.
- the protrusion 5 (see, e.g., FIGS. 2 and 3 ) is provided on the lower surface of the top plate 11 to surround the outer periphery of a core portion 21 for fixing the rotary table 2 .
- the protrusion 5 is continuous with a portion on the rotation center side of the convex portion 4 , and the lower surface thereof is formed at the same height as the first ceiling surface 44 .
- FIG. 1 referred to above is a cross-sectional view taken along the line I-I′ of FIG. 3 , and illustrates a region where the second ceiling surface 45 is provided.
- FIG. 5 is a cross-sectional view illustrating a region where the first ceiling surface 44 is provided.
- a bent portion 46 that bends in an L shape to face the outer end surface of the rotary table 2 is formed on the peripheral portion of the fan-shaped convex portion 4 (the portion on the outer edge side of the vacuum container 1 ). Similar to the convex portion 4 , the bent portion 46 suppresses the invasion of the reaction gas from both sides of the separation region D, and suppresses the mixing of both reaction gases. Since the fan-shaped convex portion 4 is provided on the top plate 11 and the top plate 11 is removable from the container body 12 , there is a slight gap between the outer peripheral surface of the bent portion 46 and the container body 12 .
- a gap between the inner peripheral surface of the bent portion 46 and the outer end surface of the rotary table 2 , and a gap between the outer peripheral surface of the bent portion 46 and the container body 12 are set to the same dimension as, for example, the height of the first ceiling surface 44 with respect to the upper surface of the rotary table 2 .
- the inner peripheral wall of the container body 12 is formed in a vertical surface which is close to the outer peripheral surface of the bent portion 46 in the separation region D (see, e.g., FIG. 4 ), but is recessed outward, for example, from a portion facing the outer end surface of the rotary table 2 to the bottom portion 14 in the portion other than the separation region D (see, e.g., FIG. 1 ).
- a recessed portion having a substantially rectangular cross-sectional shape is referred to as an exhaust region.
- an exhaust region that communicates with the first processing region P 1 is referred to as a first exhaust region E 1
- a region that communicates with the second processing region P 2 is referred to as a second exhaust region E 2 .
- a first exhaust port 61 and a second exhaust port 62 are formed at the bottom portions of the first exhaust region E 1 and the second exhaust region E 2 , respectively.
- the first exhaust port 61 and the second exhaust port 62 are each connected to an exhaust device, for example, a vacuum pump 64 , via an exhaust pipe 63 .
- a pressure controller 65 is provided in the exhaust pipe 63 placed between the first exhaust port 61 and the vacuum pump 64 .
- a pressure controller 65 is provided in the exhaust pipe 63 placed between the second exhaust port 62 and the vacuum pump 64 .
- a heater unit 7 is provided in the space between the rotary table 2 and the bottom portion 14 of the vacuum container 1 , as illustrated in FIGS. 1 and 5 , and the substrate W on the rotary table 2 is heated to a temperature (e.g., 450 ° C.) determined by a process recipe via the rotary table 2 .
- An annular cover member 71 is provided below the vicinity of the peripheral edge of the rotary table 2 (see, e.g., FIG. 5 ).
- the cover member 71 divides the atmosphere from the space above the rotary table 2 to the first exhaust region E 1 and the second exhaust region E 2 and the atmosphere in which the heater unit 7 is placed, thereby suppressing the invasion of gas into the region below the rotary table 2 .
- the cover member 71 includes an inner member 71 a which is provided to face an outer edge portion of the rotary table 2 and the outer peripheral side of the outer edge portion from below, and an outer member 71 b which is provided between the inner member 71 a and the inner wall surface of the vacuum container 1 .
- the outer member 71 b is provided in the separation region D below the bent portion 46 formed on the outer edge portion of the convex portion 4 and in close proximity to the bent portion 46 .
- the inner member 71 a surrounds the heater unit 7 over the entire circumference below the outer edge portion of the rotary table 2 (and below the portion slightly outside the outer edge portion).
- the case body 20 is provided with a purge gas supply pipe 72 that supplies the N 2 gas, which is a purge gas, into a narrow space for purging.
- the bottom portion 14 of the vacuum container 1 is provided with a plurality of purge gas supply pipes 73 that purges an arrangement space of the heater unit 7 at predetermined angular intervals in the circumferential direction below the heater unit 7 ( FIG. 5 illustrates a single purge gas supply pipe 73 ).
- a lid member 7 a is provided between the heater unit 7 and the rotary table 2 so as to cover from the inner peripheral wall of the outer member 71 b (the upper surface of the inner member 71 a ) to the upper end of the protrusion 12 a in the circumferential direction.
- the lid member 7 a may be made of, for example, quartz.
- a separation gas supply pipe 51 is connected to the central portion of the top plate 11 of the vacuum container 1 , and configured to supply the N 2 gas, which is a separation gas, to the space 52 between the top plate 11 and the core portion 21 .
- the separation gas supplied to the space 52 is discharged toward the peripheral edge along the surface of the rotary table 2 on the recess 24 side via a narrow space 50 between the protrusion 5 and the rotary table 2 .
- the space 50 may be maintained at a pressure higher than the spaces 481 and 482 by the separation gas. Therefore, the space 50 suppresses mixing of the first reaction gas supplied to the first processing region P 1 and the second reaction gas supplied to the second processing region P 2 through a central region C. That is, the space 50 (or the central region C) functions in the same manner as the separation space H (or the separation region D).
- the transfer port 15 is formed on the side wall of the vacuum container 1 to deliver the substrate W between an external transfer arm 10 and the rotary table 2 .
- the transfer port 15 is opened and closed by a gate valve (not illustrated).
- the substrate W is delivered to and from the transfer arm 10 at a position facing the transfer port 15 in the recess 24 , which is a substrate placing area in the rotary table 2 . Therefore, a lifting pin for delivery and a lifting mechanism thereof (neither of which is illustrated) for lifting the substrate W from the back surface through the recess 24 are provided at a portion below the rotary table 2 corresponding to the delivery position.
- a window 16 is formed on a part of the top plate 11 .
- the window 16 is provided with, for example, quartz glass, and is configured so that the inside of the vacuum container 1 may be visually recognized.
- a thickness calculating unit 80 is provided above the window 16 of the top plate 11 .
- FIG. 6 is a diagram illustrating an example of the thickness calculating unit 80 .
- the thickness calculating unit 80 includes a light source 81 , an optical circulator 82 , a collimator 83 , a spectroscope 84 , and an arithmetic device 85 .
- the light source 81 generates measurement light having a wavelength transmitted through the substrate W.
- the light source 81 is a low coherence light source that emits low coherence light.
- the low coherence light has lower coherence than coherent light and higher coherence than incoherent light, and is light in which interference fringes between the reflected light from a front surface Wa of the substrate W and the reflected light from a back surface Wb thereof are generated when used as the emitted light.
- the low coherence light source may be, for example, a super luminescent diode (SLD) light source.
- SLD super luminescent diode
- the optical circulator 82 is connected to the light source 81 , the collimator 83 , and the spectroscope 84 .
- the optical circulator 82 emits the measurement light generated by the light source 81 to the collimator 83 .
- the collimator 83 emits the measurement light to the front surface Wa of the substrate W.
- the collimator 83 emits measurement light adjusted as parallel light rays to the substrate W.
- the collimator 83 causes the reflected light from the substrate W to be incident.
- the reflected light includes not only the reflected light of the front surface Wa of the substrate W but also the reflected light of the back surface Wb.
- the collimator 83 emits the reflected light to the optical circulator 82 .
- the optical circulator 82 emits the reflected light to the spectroscope 84 .
- the spectroscope 84 measures the interference spectrum generated by the reflected light from the front surface Wa and the back surface Wb of the substrate W.
- the spectroscope 84 outputs the interference spectrum to the arithmetic device 85 .
- the arithmetic device 85 converts the interference spectrum output by the spectroscope 84 into an interference signal by inverse Fourier transform, and calculates the optical path length (optical thickness) of the substrate W from the peak interval of the interference signal.
- a controller 100 executes the temperature measurement method described later by controlling each unit of the film forming apparatus.
- the controller 100 may be, for example, a computer.
- the computer program that operates each unit of the film forming apparatus is stored in a storage medium.
- the storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, or a DVD.
- the controller 100 includes an operation controller 101 , a substrate specifying unit 102 , a storage unit 103 , a temperature calculating unit 104 , a determination unit 105 , and an output unit 106 .
- the operation controller 101 controls the operation of each unit of the film forming apparatus.
- the operation controller 101 controls various operations including the loading and unloading operations of the substrate W, the rotating and stopping operations of the rotary table 2 , the gas supply operation, and the exhaust operation in the vacuum container 1 .
- the substrate specifying unit 102 specifies the substrate W of which the optical thickness has been calculated by the thickness calculating unit 80 , based on the rotation position information of the rotary table 2 detected by the encoder 25 .
- the substrate specifying unit 102 specifies a slot number of the recess 24 located below the thickness calculating unit 80 , and specifies the substrate W placed in the recess 24 of the slot number based on the rotation position information of the rotary table 2 detected by the encoder 25 ,
- the storage unit 103 stores various information including first relationship information and second relationship information.
- the first relationship information indicates a relationship between the temperature and the thickness associated with each substrate W.
- the first relationship information is generated by measuring the thickness of the substrate W with various measuring devices, for example, in a state where the substrate W is heated to a predetermined temperature in a heating furnace such as an oven. Further, the first relationship information may be generated by measuring the thickness of the substrate W with various measuring devices in a state where the substrate W is heated to a predetermined temperature in the vacuum container 1 of the film forming apparatus.
- the various measuring devices may be, for example, a measuring device for measuring the thickness of a substrate by a non-contact optical method, or a measuring device for measuring the thickness of a substrate by a contact method.
- the second relationship information indicates the relationship between an amount of change in temperature and an amount of change in optical thickness associated with each substrate W.
- the symbol “n” represents the refractive index of the substrate W, and the symbol “d” represents the thickness of the substrate W.
- the temperature calculating unit 104 calculates the temperature of the substrate W based on the optical thickness of the substrate W calculated by the thickness calculating unit 80 , the substrate W specified by the substrate specifying unit 102 , and the first and second relationship information stored in the storage unit 103 .
- the first relationship information and the second relationship information are each associated with the substrate W specified by the substrate specifying unit 102 .
- the optical thickness of the substrate W is “795 ⁇ m”
- the substrate W is a “silicon wafer”
- the temperature of the substrate W is calculated by the following formula.
- the determination unit 105 determines whether the temperature difference among the plurality of substrates W calculated by the temperature calculating unit 104 is within a predetermined threshold value.
- the temperature difference among the plurality of substrates W may be, for example, a difference between the maximum temperature and the minimum temperature among the temperatures of the plurality of substrates W.
- the threshold value is set in advance by an administrator. Further, the determination unit 105 determines whether the condition for ending the measurement of the temperature of the substrate W has been satisfied. For example, when a predetermined time has elapsed from the start of the calculation of the optical thickness of the substrate W by the thickness calculating unit 80 , the controller 100 determines that the condition for ending the measurement of the temperature of the substrate W has been satisfied. In addition, the determination unit 105 determines whether a predetermined temperature stabilization time has elapsed.
- the output unit 106 outputs an alarm based on the temperature difference among the plurality of substrates W calculated by the temperature calculating unit 104 .
- the output unit 106 sounds an alarm sound, displays an alarm screen, and transmits an alarm signal to a host controller (e.g., a host controller).
- a host controller e.g., a host controller
- the encoder 25 , the thickness calculating unit 80 , and the controller 100 constitute a temperature measurement system for measuring the temperature of the substrate W placed in the recess 24 of the rotary table 2 .
- the above example represents a case where the arithmetic device 85 of the thickness calculating unit 80 calculates the optical thickness of the substrate W based on the interference spectrum, but the present disclosure is not limited thereto.
- the controller 100 may be configured to calculate the optical thickness of the substrate W based on the interference spectrum instead of the arithmetic device 85 .
- the above example represents a case where the storage unit 103 of the controller 100 stores the first relationship information and the second relationship information, but the present disclosure is not limited thereto.
- the thickness calculating unit 80 may be configured to store at least one of the first relationship information and the second relationship information.
- FIG. 7 is a flowchart illustrating an example of a temperature measurement method according to the temperature measurement system of the embodiment.
- the temperature measurement method of the embodiment includes steps S 1 to S 13 .
- steps S 1 to S 13 the temperature of the substrate W placed on each of the five recesses 24 of the rotary table 2 is measured.
- step S 1 the controller 100 controls each unit of the film forming apparatus to load the substrate W into the vacuum container 1 .
- the controller 100 places the substrate W in each of the five recesses 24 formed in the rotary table 2 .
- the substrate W may be, for example, a bare wafer.
- step S 2 the controller 100 initializes the thickness calculating unit 80 .
- the initialization by the thickness calculating unit 80 includes, for example, the initialization of the spectroscope 84 .
- step S 3 the controller 100 acquires the first relationship information indicating the relationship between the temperature and the thickness associated with each substrate W, and the second relationship information indicating the relationship between an amount of change in temperature and an amount of change in optical thickness associated with each substrate W, which are stored in the storage unit 103 .
- the first relationship information is generated by measuring the thickness of the substrate W with various measuring devices, for example, in a state where the substrate W is heated to a predetermined temperature in a heating furnace such as an oven.
- the various measuring devices may be, for example, a measuring device for measuring the thickness of a substrate by a non-contact optical method, or a measuring device for measuring the thickness of a substrate by a contact method.
- the second relationship information is determined for each material of the substrate W.
- step S 4 the controller 100 starts the rotation of the rotary table 2 .
- the substrates W placed on the recesses 24 formed in the rotary table 2 pass below the thickness calculating unit 80 in order.
- the thickness calculating unit 80 irradiates the substrate W with the measurement light and calculates the optical thickness of the substrate W based on the reflected light of the measurement light.
- the thickness calculating unit 80 irradiates the substrate W with the measurement light from the light source 81 , measures the interference spectrum generated by the reflected light from the front surface Wa and the back surface Wb of the substrate W by the spectroscope 84 , and calculates the optical thickness of the substrate W based on the interference spectrum by the arithmetic device 85 .
- step S 6 the controller 100 specifies the substrate W for which the thickness calculating unit 80 has calculated the optical thickness based on the rotation position information of the rotary table 2 detected by the encoder 25 .
- the controller 100 specifies a slot number of the recess 24 located below the thickness calculating unit 80 , and the substrate W placed in the recess 24 of the slot number based on the rotation position information of the rotary table 2 detected by the encoder 25 .
- step S 7 the controller 100 calculates the temperature of the substrate W based on the optical thickness of the substrate W calculated in step S 5 , the substrate W specified in step S 6 , and the first relationship information and the second relationship information acquired in step S 3 .
- the optical thickness of the substrate W is “795 ⁇ m”
- the substrate W is a “silicon wafer”
- the temperature of the substrate W is calculated by the following formula.
- step S 8 the controller 100 determines whether the temperature difference among five substrates W calculated in step S 7 is within a predetermined threshold value.
- the temperature difference among the five substrates W may be, for example, a difference between the maximum temperature and the minimum temperature among the temperatures of the five substrates W.
- the controller 100 advances the process to step S 9 .
- the controller 100 advances the process to step S 10 .
- step S 9 the controller 100 determines whether the condition for ending the measurement of the temperature of the substrate W has been satisfied. For example, when a predetermined time has elapsed from the start of the calculation of the optical thickness of the substrate W in step S 5 , the controller 100 determines that the condition for ending the measurement of the temperature of the substrate W has been satisfied. When it is determined that the condition for ending the measurement of the temperature of the substrate W has been satisfied, the controller 100 advances the process to step S 12 . Meanwhile, when it is determined that the condition for ending the measurement of the temperature of the substrate W has not been satisfied, the controller 100 returns the process to step S 5 .
- step S 10 the controller 100 determines whether a predetermined temperature stabilization time has elapsed since the rotation of the rotary table 2 was started in step S 4 .
- the controller 100 advances the process to step S 11 .
- the controller 100 returns the process to step S 5 .
- step S 11 the controller 100 outputs an alarm.
- the controller 100 sounds an alarm sound, displays an alarm screen, and transmits an alarm signal to a host controller (e.g., a host controller).
- a host controller e.g., a host controller
- step S 12 the controller 100 stops the rotation of the rotary table 2 .
- step S 13 the controller 100 controls each unit of the film forming apparatus to unload the substrate W from the vacuum container 1 .
- the controller 100 unloads the substrate W in each of the five recesses 24 formed in the rotary table 2 .
- the temperature calculating unit 104 calculates the temperature of the substrate W based on the optical thickness of the substrate W calculated by the thickness calculating unit 80 , the substrate W specified by the substrate specifying unit 102 , and the first and second relationship information stored in the storage unit 103 .
- a single thickness calculating unit 80 may accurately measure the temperatures of the plurality of substrates W accommodated in the vacuum container 1 .
- the rotary table has five recesses, but the present disclosure is not limited thereto.
- the rotary table may have four or less recesses, or may have six or more recesses.
Abstract
Description
- This application is based on and claims priority from Japanese Patent Application No. 2019-206738 filed on Nov. 15, 2019 with the Japan Patent Office, the disclosure of which is incorporated herein in its entirety by reference.
- The present disclosure relates to a temperature measurement system, a temperature measurement method, and a substrate processing apparatus.
- As a method of measuring the temperature of a substrate accommodated in a processing container in a non-contact manner, a method of using an optical interference thermometer is known (see, e.g., Japanese Patent Laid-Open Publication No. 2013-029487).
- A temperature measurement system according to an aspect of the present disclosure includes: a thickness calculating unit configured to irradiate a measurement light on a substrate among a plurality of substrates placed along a rotation direction of a rotary table and calculate an optical thickness of each of the substrates based on a reflected light of the measurement light; a rotation position detecting unit configured to detect rotation position information of the rotary table; a substrate specifying unit configured to specify a substrate of which the optical thickness has been calculated by the thickness calculating unit, based on the rotation position information detected by the rotation position detecting unit; a storage unit configured to store first relationship information indicating a relationship between a temperature and a thickness associated with each of the plurality of substrates, and second relationship information indicating a relationship between an amount of change in temperature and an amount of change in optical thickness associated with each of the plurality of substrates; and a temperature calculating unit configured to calculate a temperature of the substrate based on the optical thickness calculated by the thickness calculating unit, the substrate specified by the substrate specifying unit, the first relationship information, and the second relationship information.
- The foregoing summary is illustrative only and is not intended to be in any way limiting. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features will become apparent by reference to the drawings and the following detailed description.
-
FIG. 1 is a configuration diagram of a temperature measurement system of an embodiment and a substrate processing apparatus using the system. -
FIG. 2 is a perspective view of an internal structure of the substrate processing apparatus inFIG. 1 . -
FIG. 3 is a top view of an internal structure of the substrate processing apparatus inFIG. 1 . -
FIG. 4 is a cross-sectional view taken along the concentric circles of the rotary table of the substrate processing apparatus inFIG. 1 . -
FIG. 5 is a cross-sectional view illustrating a region where a ceiling surface of a processing container of the substrate processing apparatus inFIG. 1 is provided. -
FIG. 6 is a diagram illustrating an example of a thickness calculating unit. -
FIG. 7 is a flowchart illustrating an example of a temperature measurement method according to the temperature measurement system of the embodiment. - In the following detailed description, reference is made to the accompanying drawings, which form a part thereof. The illustrative embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made without departing from the spirit or scope of the subject matter presented here.
- Hereinafter, non-limiting embodiments of the present disclosure will be described with reference to the accompanying drawings. In the accompanying drawings, the same or corresponding members or parts are denoted by the same or corresponding reference numerals, and redundant explanations thereof are omitted.
- <Substrate Processing Apparatus>
-
FIG. 1 is a configuration diagram of a temperature measurement system of an embodiment and a substrate processing apparatus using the system.FIG. 2 is a perspective view of an internal structure of the plasma processing apparatus inFIG. 1 , andFIG. 3 is a top view of the internal structure of the plasma processing apparatus inFIG. 1 . - When the substrate processing apparatus processes a substrate while rotating a rotary table, various substrate processing apparatuses may be applied to such a process. However, in the present embodiment, descriptions will be made on an example in which the substrate processing apparatus is configured as a film forming apparatus.
- With reference to
FIGS. 1 to 3 , the film forming apparatus includes aflat vacuum container 1 having a substantially circular planar shape, and a rotary table 2 provided in thevacuum container 1 and having a rotation center at the center of thevacuum container 1. Thevacuum container 1 is a processing chamber in which the inside may be depressurized, and for accommodating a substrate W to be processed and performing a film forming process on the substrate W. The substrate W may be a substrate such as, for example, silicon (Si), quartz (SiO2), silicon carbide (SiC), a low-resistance substrate, or sapphire. - The
vacuum container 1 includes acontainer body 12 having a bottomed cylindrical shape, and atop plate 11 that is airtightly and detachably placed on the upper surface of thecontainer body 12 via aseal member 13 such as, for example, an O-ring (see, e.g.,FIG. 1 ). - The rotary table 2 is a stage on which the substrate W is placed. The rotary table 2 includes a
recess 24 having a depression shape on the surface thereof, and supports the substrate on therecess 24. InFIG. 1 , a state in which the substrate W is placed on therecess 24 is illustrated. The rotary table 2 is made of, for example, quartz and is fixed to acylindrical core portion 21 at a central portion. - The
core portion 21 is fixed to the upper end of a rotatingshaft 22 extending in the vertical direction. The rotatingshaft 22 penetrates abottom portion 14 of thevacuum container 1, and the lower end thereof is attached to amotor 23 that rotates the rotating shaft 22 (see, e.g.,FIG. 1 ) around a vertical axis. The rotatingshaft 22 and themotor 23 are accommodated in atubular case body 20 having an open upper surface. A flange portion provided on the upper surface of thecase body 20 is airtightly attached to the lower surface of thebottom portion 14 of thevacuum container 1, and an airtight state between the internal atmosphere and the external atmosphere of thecase body 20 is maintained. - The
motor 23 is provided with anencoder 25 so that the rotation angle of the rotatingshaft 22 may be detected. In the temperature measurement system of the present embodiment, theencoder 25 is used as a rotation position detecting unit that specifies the position of the substrate W placed in therecess 24 on the rotary table 2. - As illustrated in
FIGS. 2 and 3 , the surface of the rotary table 2 is provided withcircular recesses 24 that place a plurality of substrates W (five substrates in the illustrated example) along the rotation direction (circumferential direction).FIG. 3 illustrates the substrate W placed only in asingle recess 24 for convenience. Therecess 24 has an inner diameter slightly greater than the diameter of the substrate W by, for example, 4 mm, and a depth substantially equal to or greater than the thickness of the substrate W. Therefore, when the substrate W is accommodated in therecess 24, the surface of the substrate W and the surface of the rotary table 2 (the region where the substrate W is not placed) have the same height, or the surface of the substrate W becomes lower than the surface of the rotary table 2. Even when the depth of therecess 24 is greater than the thickness of the substrate W, when the depth is set to be too great, the film formation is affected. Thus, it is preferable to set the depth to about three times the thickness of the substrate W. On the bottom surface of therecess 24, through holes (none of which are illustrated) are formed through which, for example, three lifting pins for supporting the back surface of the substrate W and raising and lowering the substrate W pass. -
FIGS. 2 and 3 are views for explaining the structure inside thevacuum container 1, and thetop plate 11 is omitted for convenience of explanation. As illustrated inFIGS. 2 and 3 ,reaction gas nozzles separation gas nozzles FIG. 3 )). In the illustrated example, theseparation gas nozzle 41, thereaction gas nozzle 31, theseparation gas nozzle 42, and thereaction gas nozzle 32 are placed in this order in the clockwise direction (rotation direction of the rotary table 2) from atransfer port 15 described later. - The
reaction gas nozzles vacuum container 1 from an outer peripheral wall of thevacuum container 1 by fixinggas introduction ports container body 12, and are attached to extend horizontally with respect to the rotary table 2 along the radial direction of thecontainer body 12. Thereaction gas nozzle 31 is connected to a first reaction gas supply source (not illustrated) via a pipe (not illustrated) and a flow rate controller. Thereaction gas nozzle 32 is connected to a second reaction gas supply source (not illustrated) via a pipe (not illustrated) and a flow rate controller. - In the
reaction gas nozzles gas discharge holes 33 that opens toward the rotary table 2 (see, e.g.,FIG. 4 ) is placed along the length direction of thereaction gas nozzles reaction gas nozzle 31 is a first processing region P1 that adsorbs a first reaction gas on the substrate W. A lower region of thereaction gas nozzle 32 is a second processing region P2 in which the first reaction gas adsorbed on the substrate W and the second reaction gas react with each other in the first processing region P1. - The
separation gas nozzles vacuum container 1 from an outer peripheral wall of thevacuum container 1 by fixinggas introduction ports container body 12, and are attached to extend horizontally with respect to the rotary table 2 along the radial direction of thecontainer body 12. Theseparation gas nozzles - With reference to
FIGS. 2 and 3 , twoconvex portions 4 are provided in thevacuum container 1. Since theconvex portion 4 constitutes a separation region D together with theseparation gas nozzles convex portion 4 is attached to the back surface of thetop plate 11 so as to protrude toward the rotary table 2 as described later. Further, theconvex portion 4 has a fan-shaped planar shape whose top is cut into an arc shape. In the present embodiment, the inner arc is connected to a protrusion 5 (to be described later) and the outer arc is placed along the inner peripheral surface of thecontainer body 12 of thevacuum container 1. -
FIG. 4 illustrates a cross section of thevacuum container 1 along the concentric circles of the rotary table 2 from thereaction gas nozzle 31 to thereaction gas nozzle 32. As illustrated in the figure, theconvex portion 4 is attached to the back surface of thetop plate 11. Therefore, in thevacuum container 1, there are afirst ceiling surface 44, which is a flat low ceiling surface which is the lower surface of theconvex portion 4, and asecond ceiling surface 45, which is located on both sides of thefirst ceiling surface 44 in the circumferential direction and is higher than thefirst ceiling surface 44. - The
first ceiling surface 44 has a fan-shaped planar shape whose top is cut into an arc shape. Further, as illustrated in the figure, agroove 43 configured to extend in the radial direction is formed in theconvex portion 4 at the center in the circumferential direction, and theseparation gas nozzle 42 is accommodated in thegroove 43. Agroove 43 is also formed in the otherconvex portion 4, and theseparation gas nozzle 41 is accommodated in thegroove 43. - Further, the
reaction gas nozzles second ceiling surface 45, respectively. Thereaction gas nozzles second ceiling surface 45. Further, as illustrated inFIG. 4 , thereaction gas nozzle 31 is provided in aspace 481 on the right side below thesecond ceiling surface 45, and thereaction gas nozzle 32 is provided in aspace 482 on the left side below thesecond ceiling surface 45. - Further, in the
separation gas nozzle 42 accommodated in thegroove 43 of theconvex portion 4, a plurality of discharge holes 42 h that opens toward the rotary table 2 (see, e.g.,FIG. 4 ) is placed along the length direction of theseparation gas nozzle 42, for example, at intervals of 10 mm. Further, in theseparation gas nozzle 41 accommodated in thegroove 43 of the otherconvex portion 4, a plurality of discharge holes 41 h that opens toward the rotary table 2 (not illustrated) is placed along the length direction of theseparation gas nozzle 41, for example, at intervals of 10 mm. - The
first ceiling surface 44 forms a separation space H, which is a narrow space, with respect to the rotary table 2. When N2 gas is supplied from thedischarge hole 42 h of theseparation gas nozzle 42, the N2 gas flows toward thespaces spaces spaces spaces spaces vacuum container 1. - A height h1 of the
first ceiling surface 44 with respect to the upper surface of the rotary table 2 is set to a height suitable for making the pressure of the separation space H higher than the pressure of thespaces vacuum container 1 at the time of film formation, the rotation speed of the rotary table 2, and the flow rate of the separated gas to be supplied. - Meanwhile, the protrusion 5 (see, e.g.,
FIGS. 2 and 3 ) is provided on the lower surface of thetop plate 11 to surround the outer periphery of acore portion 21 for fixing the rotary table 2. In the present embodiment, theprotrusion 5 is continuous with a portion on the rotation center side of theconvex portion 4, and the lower surface thereof is formed at the same height as thefirst ceiling surface 44. -
FIG. 1 referred to above is a cross-sectional view taken along the line I-I′ ofFIG. 3 , and illustrates a region where thesecond ceiling surface 45 is provided. Meanwhile,FIG. 5 is a cross-sectional view illustrating a region where thefirst ceiling surface 44 is provided. - As illustrated in
FIG. 5 , abent portion 46 that bends in an L shape to face the outer end surface of the rotary table 2 is formed on the peripheral portion of the fan-shaped convex portion 4 (the portion on the outer edge side of the vacuum container 1). Similar to theconvex portion 4, thebent portion 46 suppresses the invasion of the reaction gas from both sides of the separation region D, and suppresses the mixing of both reaction gases. Since the fan-shapedconvex portion 4 is provided on thetop plate 11 and thetop plate 11 is removable from thecontainer body 12, there is a slight gap between the outer peripheral surface of thebent portion 46 and thecontainer body 12. A gap between the inner peripheral surface of thebent portion 46 and the outer end surface of the rotary table 2, and a gap between the outer peripheral surface of thebent portion 46 and thecontainer body 12 are set to the same dimension as, for example, the height of thefirst ceiling surface 44 with respect to the upper surface of the rotary table 2. - The inner peripheral wall of the
container body 12 is formed in a vertical surface which is close to the outer peripheral surface of thebent portion 46 in the separation region D (see, e.g.,FIG. 4 ), but is recessed outward, for example, from a portion facing the outer end surface of the rotary table 2 to thebottom portion 14 in the portion other than the separation region D (see, e.g.,FIG. 1 ). Hereinafter, for convenience of explanation, a recessed portion having a substantially rectangular cross-sectional shape is referred to as an exhaust region. Specifically, an exhaust region that communicates with the first processing region P1 is referred to as a first exhaust region E1, and a region that communicates with the second processing region P2 is referred to as a second exhaust region E2. - As illustrated in
FIGS. 1 to 3 , afirst exhaust port 61 and asecond exhaust port 62 are formed at the bottom portions of the first exhaust region E1 and the second exhaust region E2, respectively. As illustrated inFIG. 1 , thefirst exhaust port 61 and thesecond exhaust port 62 are each connected to an exhaust device, for example, avacuum pump 64, via anexhaust pipe 63. Further, apressure controller 65 is provided in theexhaust pipe 63 placed between thefirst exhaust port 61 and thevacuum pump 64. Similarly, apressure controller 65 is provided in theexhaust pipe 63 placed between thesecond exhaust port 62 and thevacuum pump 64. - A heater unit 7 is provided in the space between the rotary table 2 and the
bottom portion 14 of thevacuum container 1, as illustrated inFIGS. 1 and 5 , and the substrate W on the rotary table 2 is heated to a temperature (e.g., 450 ° C.) determined by a process recipe via the rotary table 2. Anannular cover member 71 is provided below the vicinity of the peripheral edge of the rotary table 2 (see, e.g.,FIG. 5 ). - The
cover member 71 divides the atmosphere from the space above the rotary table 2 to the first exhaust region E1 and the second exhaust region E2 and the atmosphere in which the heater unit 7 is placed, thereby suppressing the invasion of gas into the region below the rotary table 2. Thecover member 71 includes aninner member 71 a which is provided to face an outer edge portion of the rotary table 2 and the outer peripheral side of the outer edge portion from below, and anouter member 71 b which is provided between theinner member 71 a and the inner wall surface of thevacuum container 1. Theouter member 71 b is provided in the separation region D below thebent portion 46 formed on the outer edge portion of theconvex portion 4 and in close proximity to thebent portion 46. Theinner member 71 a surrounds the heater unit 7 over the entire circumference below the outer edge portion of the rotary table 2 (and below the portion slightly outside the outer edge portion). - The
bottom portion 14 at a portion which is closer to the center of rotation than the space in which the heater unit 7 is placed protrudes upward so as to approach thecore portion 21 near the center portion of the lower surface of the rotary table 2 to form aprotrusion 12 a. Since a space between theprotrusion 12 a and thecore portion 21 is narrow, and a gap between the inner peripheral surface of a through hole of therotating shaft 22 penetrating thebottom portion 14 and therotating shaft 22 is narrow, these narrow spaces communicate with thecase body 20. Thecase body 20 is provided with a purgegas supply pipe 72 that supplies the N2 gas, which is a purge gas, into a narrow space for purging. Further, thebottom portion 14 of thevacuum container 1 is provided with a plurality of purgegas supply pipes 73 that purges an arrangement space of the heater unit 7 at predetermined angular intervals in the circumferential direction below the heater unit 7 (FIG. 5 illustrates a single purge gas supply pipe 73). In addition, in order to suppress the invasion of gas into the region where the heater unit 7 is provided, alid member 7 a is provided between the heater unit 7 and the rotary table 2 so as to cover from the inner peripheral wall of theouter member 71 b (the upper surface of theinner member 71 a) to the upper end of theprotrusion 12 a in the circumferential direction. Thelid member 7 a may be made of, for example, quartz. - Further, a separation
gas supply pipe 51 is connected to the central portion of thetop plate 11 of thevacuum container 1, and configured to supply the N2 gas, which is a separation gas, to thespace 52 between thetop plate 11 and thecore portion 21. The separation gas supplied to thespace 52 is discharged toward the peripheral edge along the surface of the rotary table 2 on therecess 24 side via anarrow space 50 between theprotrusion 5 and the rotary table 2. Thespace 50 may be maintained at a pressure higher than thespaces space 50 suppresses mixing of the first reaction gas supplied to the first processing region P1 and the second reaction gas supplied to the second processing region P2 through a central region C. That is, the space 50 (or the central region C) functions in the same manner as the separation space H (or the separation region D). - As illustrated in
FIGS. 2 and 3 , thetransfer port 15 is formed on the side wall of thevacuum container 1 to deliver the substrate W between anexternal transfer arm 10 and the rotary table 2. Thetransfer port 15 is opened and closed by a gate valve (not illustrated). Further, the substrate W is delivered to and from thetransfer arm 10 at a position facing thetransfer port 15 in therecess 24, which is a substrate placing area in the rotary table 2. Therefore, a lifting pin for delivery and a lifting mechanism thereof (neither of which is illustrated) for lifting the substrate W from the back surface through therecess 24 are provided at a portion below the rotary table 2 corresponding to the delivery position. - A
window 16 is formed on a part of thetop plate 11. Thewindow 16 is provided with, for example, quartz glass, and is configured so that the inside of thevacuum container 1 may be visually recognized. - A
thickness calculating unit 80 is provided above thewindow 16 of thetop plate 11.FIG. 6 is a diagram illustrating an example of thethickness calculating unit 80. In the present embodiment, thethickness calculating unit 80 includes alight source 81, anoptical circulator 82, acollimator 83, aspectroscope 84, and anarithmetic device 85. - The
light source 81 generates measurement light having a wavelength transmitted through the substrate W. In the present embodiment, thelight source 81 is a low coherence light source that emits low coherence light. The low coherence light has lower coherence than coherent light and higher coherence than incoherent light, and is light in which interference fringes between the reflected light from a front surface Wa of the substrate W and the reflected light from a back surface Wb thereof are generated when used as the emitted light. The low coherence light source may be, for example, a super luminescent diode (SLD) light source. - The
optical circulator 82 is connected to thelight source 81, thecollimator 83, and thespectroscope 84. Theoptical circulator 82 emits the measurement light generated by thelight source 81 to thecollimator 83. Thecollimator 83 emits the measurement light to the front surface Wa of the substrate W. Thecollimator 83 emits measurement light adjusted as parallel light rays to the substrate W. Then, thecollimator 83 causes the reflected light from the substrate W to be incident. The reflected light includes not only the reflected light of the front surface Wa of the substrate W but also the reflected light of the back surface Wb. Thecollimator 83 emits the reflected light to theoptical circulator 82. Theoptical circulator 82 emits the reflected light to thespectroscope 84. - The
spectroscope 84 measures the interference spectrum generated by the reflected light from the front surface Wa and the back surface Wb of the substrate W. Thespectroscope 84 outputs the interference spectrum to thearithmetic device 85. - The
arithmetic device 85 converts the interference spectrum output by thespectroscope 84 into an interference signal by inverse Fourier transform, and calculates the optical path length (optical thickness) of the substrate W from the peak interval of the interference signal. - A
controller 100 executes the temperature measurement method described later by controlling each unit of the film forming apparatus. Thecontroller 100 may be, for example, a computer. Further, the computer program that operates each unit of the film forming apparatus is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, or a DVD. - The
controller 100 includes anoperation controller 101, asubstrate specifying unit 102, astorage unit 103, atemperature calculating unit 104, adetermination unit 105, and anoutput unit 106. - The
operation controller 101 controls the operation of each unit of the film forming apparatus. In the present embodiment, theoperation controller 101 controls various operations including the loading and unloading operations of the substrate W, the rotating and stopping operations of the rotary table 2, the gas supply operation, and the exhaust operation in thevacuum container 1. - The
substrate specifying unit 102 specifies the substrate W of which the optical thickness has been calculated by thethickness calculating unit 80, based on the rotation position information of the rotary table 2 detected by theencoder 25. In the present embodiment, thesubstrate specifying unit 102 specifies a slot number of therecess 24 located below thethickness calculating unit 80, and specifies the substrate W placed in therecess 24 of the slot number based on the rotation position information of the rotary table 2 detected by theencoder 25, - The
storage unit 103 stores various information including first relationship information and second relationship information. - The first relationship information indicates a relationship between the temperature and the thickness associated with each substrate W. The first relationship information is generated by measuring the thickness of the substrate W with various measuring devices, for example, in a state where the substrate W is heated to a predetermined temperature in a heating furnace such as an oven. Further, the first relationship information may be generated by measuring the thickness of the substrate W with various measuring devices in a state where the substrate W is heated to a predetermined temperature in the
vacuum container 1 of the film forming apparatus. The various measuring devices may be, for example, a measuring device for measuring the thickness of a substrate by a non-contact optical method, or a measuring device for measuring the thickness of a substrate by a contact method. The first relationship information is determined as, for example, “substrate:temperature:thickness=wafer X:100° C.:775 μm” or “substrate:temperature:thickness=wafer Y:100° C.:777 μm.” “Substrate:temperature:thickness=wafer X:100° C.:775 μm” means that the thickness of the wafer X at 100° C. is 775 μm. Also, “substrate:temperature:thickness=wafer X:100° C.:777 μm” means that the thickness of the wafer X at 100° C. is 777 μm. - The second relationship information indicates the relationship between an amount of change in temperature and an amount of change in optical thickness associated with each substrate W. The second relationship information is determined for each material of the substrate W. For example, when the material of the substrate W is silicon, the amount of change in optical thickness is determined as Δ(nd)=0.2 μm/° C. Further, for example, when the material of the substrate W is quartz, the amount of change in optical thickness is determined as Δ(nd)=0.02 μm/° C. In the formula, the symbol “n” represents the refractive index of the substrate W, and the symbol “d” represents the thickness of the substrate W.
- The
temperature calculating unit 104 calculates the temperature of the substrate W based on the optical thickness of the substrate W calculated by thethickness calculating unit 80, the substrate W specified by thesubstrate specifying unit 102, and the first and second relationship information stored in thestorage unit 103. The first relationship information and the second relationship information are each associated with the substrate W specified by thesubstrate specifying unit 102. For example, when the optical thickness of the substrate W is “795 μm,” the substrate W is a “silicon wafer,” the first relationship information is “temperature:thickness=100° C.:775 μm,” and the second relationship information is “Δ(nd)=0.2 μm/° C.,” the temperature of the substrate W is calculated by the following formula. -
[Temperature of substrate W]=100+(795−775)/0.2=200° C. - The
determination unit 105 determines whether the temperature difference among the plurality of substrates W calculated by thetemperature calculating unit 104 is within a predetermined threshold value. The temperature difference among the plurality of substrates W may be, for example, a difference between the maximum temperature and the minimum temperature among the temperatures of the plurality of substrates W. The threshold value is set in advance by an administrator. Further, thedetermination unit 105 determines whether the condition for ending the measurement of the temperature of the substrate W has been satisfied. For example, when a predetermined time has elapsed from the start of the calculation of the optical thickness of the substrate W by thethickness calculating unit 80, thecontroller 100 determines that the condition for ending the measurement of the temperature of the substrate W has been satisfied. In addition, thedetermination unit 105 determines whether a predetermined temperature stabilization time has elapsed. - The
output unit 106 outputs an alarm based on the temperature difference among the plurality of substrates W calculated by thetemperature calculating unit 104. For example, theoutput unit 106 sounds an alarm sound, displays an alarm screen, and transmits an alarm signal to a host controller (e.g., a host controller). - The
encoder 25, thethickness calculating unit 80, and thecontroller 100 constitute a temperature measurement system for measuring the temperature of the substrate W placed in therecess 24 of the rotary table 2. - Further, the above example represents a case where the
arithmetic device 85 of thethickness calculating unit 80 calculates the optical thickness of the substrate W based on the interference spectrum, but the present disclosure is not limited thereto. For example, thecontroller 100 may be configured to calculate the optical thickness of the substrate W based on the interference spectrum instead of thearithmetic device 85. - Further, the above example represents a case where the
storage unit 103 of thecontroller 100 stores the first relationship information and the second relationship information, but the present disclosure is not limited thereto. For example, thethickness calculating unit 80 may be configured to store at least one of the first relationship information and the second relationship information. - [Temperature Measurement Method]
-
FIG. 7 is a flowchart illustrating an example of a temperature measurement method according to the temperature measurement system of the embodiment. The temperature measurement method of the embodiment includes steps S1 to S13. In the following, descriptions will be made on a case where the temperature of the substrate W placed on each of the fiverecesses 24 of the rotary table 2 is measured. - In step S1, the
controller 100 controls each unit of the film forming apparatus to load the substrate W into thevacuum container 1. In the present embodiment, thecontroller 100 places the substrate W in each of the fiverecesses 24 formed in the rotary table 2. The substrate W may be, for example, a bare wafer. - In step S2, the
controller 100 initializes thethickness calculating unit 80. The initialization by thethickness calculating unit 80 includes, for example, the initialization of thespectroscope 84. - In step S3, the
controller 100 acquires the first relationship information indicating the relationship between the temperature and the thickness associated with each substrate W, and the second relationship information indicating the relationship between an amount of change in temperature and an amount of change in optical thickness associated with each substrate W, which are stored in thestorage unit 103. The first relationship information is generated by measuring the thickness of the substrate W with various measuring devices, for example, in a state where the substrate W is heated to a predetermined temperature in a heating furnace such as an oven. The various measuring devices may be, for example, a measuring device for measuring the thickness of a substrate by a non-contact optical method, or a measuring device for measuring the thickness of a substrate by a contact method. The second relationship information is determined for each material of the substrate W. For example, when the material of the substrate W is silicon and the amount of change in optical thickness is Δ(nd), the second relationship information is determined as Δ(nd)=0.2 μm/° C. Also, for example, when the material of the substrate W is quartz, the second relationship information is determined as Δ(nd)=0.02 μm/° C. - In step S4, the
controller 100 starts the rotation of the rotary table 2. As a result, the substrates W placed on therecesses 24 formed in the rotary table 2 pass below thethickness calculating unit 80 in order. - In step S5, the
thickness calculating unit 80 irradiates the substrate W with the measurement light and calculates the optical thickness of the substrate W based on the reflected light of the measurement light. In the present embodiment, thethickness calculating unit 80 irradiates the substrate W with the measurement light from thelight source 81, measures the interference spectrum generated by the reflected light from the front surface Wa and the back surface Wb of the substrate W by thespectroscope 84, and calculates the optical thickness of the substrate W based on the interference spectrum by thearithmetic device 85. - In step S6, the
controller 100 specifies the substrate W for which thethickness calculating unit 80 has calculated the optical thickness based on the rotation position information of the rotary table 2 detected by theencoder 25. In the present embodiment, thecontroller 100 specifies a slot number of therecess 24 located below thethickness calculating unit 80, and the substrate W placed in therecess 24 of the slot number based on the rotation position information of the rotary table 2 detected by theencoder 25. - In step S7, the
controller 100 calculates the temperature of the substrate W based on the optical thickness of the substrate W calculated in step S5, the substrate W specified in step S6, and the first relationship information and the second relationship information acquired in step S3. For example, when the optical thickness of the substrate W is “795 μm,” the substrate W is a “silicon wafer,” the first relationship information is “temperature:thickness=100° C.:775 μm,” and the second relationship information is “Δ(nd)=0.2 μm/° C.,” the temperature of the substrate W is calculated by the following formula. -
[Temperature of substrate W]=100+(795-775)/0.2=200° C. - In step S8, the
controller 100 determines whether the temperature difference among five substrates W calculated in step S7 is within a predetermined threshold value. The temperature difference among the five substrates W may be, for example, a difference between the maximum temperature and the minimum temperature among the temperatures of the five substrates W. When it is determined in step S8 that the temperature difference among the five substrates W is within a predetermined threshold value, thecontroller 100 advances the process to step S9. Meanwhile, when it is determined in step S8 that the temperature difference among the five substrates W is not within a predetermined threshold value, thecontroller 100 advances the process to step S10. - In step S9, the
controller 100 determines whether the condition for ending the measurement of the temperature of the substrate W has been satisfied. For example, when a predetermined time has elapsed from the start of the calculation of the optical thickness of the substrate W in step S5, thecontroller 100 determines that the condition for ending the measurement of the temperature of the substrate W has been satisfied. When it is determined that the condition for ending the measurement of the temperature of the substrate W has been satisfied, thecontroller 100 advances the process to step S12. Meanwhile, when it is determined that the condition for ending the measurement of the temperature of the substrate W has not been satisfied, thecontroller 100 returns the process to step S5. - In step S10, the
controller 100 determines whether a predetermined temperature stabilization time has elapsed since the rotation of the rotary table 2 was started in step S4. When it is determined in step S10 that the predetermined temperature stabilization time has elapsed, thecontroller 100 advances the process to step S11. Meanwhile, when it is determined in step S10 that the predetermined temperature stabilization time has not elapsed, thecontroller 100 returns the process to step S5. - In step S11, the
controller 100 outputs an alarm. For example, thecontroller 100 sounds an alarm sound, displays an alarm screen, and transmits an alarm signal to a host controller (e.g., a host controller). - In step S12, the
controller 100 stops the rotation of the rotary table 2. - In step S13, the
controller 100 controls each unit of the film forming apparatus to unload the substrate W from thevacuum container 1. In the present embodiment, thecontroller 100 unloads the substrate W in each of the fiverecesses 24 formed in the rotary table 2. After step S13, the process ends. - As described above, according to the embodiment, the
temperature calculating unit 104 calculates the temperature of the substrate W based on the optical thickness of the substrate W calculated by thethickness calculating unit 80, the substrate W specified by thesubstrate specifying unit 102, and the first and second relationship information stored in thestorage unit 103. As a result, a singlethickness calculating unit 80 may accurately measure the temperatures of the plurality of substrates W accommodated in thevacuum container 1. - In the above embodiment, descriptions have been made on the case where the rotary table has five recesses, but the present disclosure is not limited thereto. For example, the rotary table may have four or less recesses, or may have six or more recesses.
- According to the present disclosure, it is possible to accurately measure the temperature of a plurality of substrates accommodated in a processing container.
- From the foregoing, it will be appreciated that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the following claims.
Claims (12)
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US20210102847A1 (en) * | 2019-10-07 | 2021-04-08 | Tokyo Electron Limited | Temperature measurement system and temperature measurement method |
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