CN102859672A - High-purity Cu bonding wire - Google Patents

High-purity Cu bonding wire Download PDF

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Publication number
CN102859672A
CN102859672A CN2010800657564A CN201080065756A CN102859672A CN 102859672 A CN102859672 A CN 102859672A CN 2010800657564 A CN2010800657564 A CN 2010800657564A CN 201080065756 A CN201080065756 A CN 201080065756A CN 102859672 A CN102859672 A CN 102859672A
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Prior art keywords
wire
purity
copper
phosphorus
lead
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CN102859672B (en
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山下勉
桑原岳
冈崎纯一
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Abstract

Provided is a ball bonding wire of a high-purity copper alloy, the wire having a high recrystallization temperature and being easily produced through wiredrawing with a die at room temperature. The ball bonding wire has a low initial ball hardness and causes no breakage of IC chips. Phosphorus (P) is added in an amount as slight as 0.5-15 mass ppm to high-purity copper having a purity of 99.9985 mass% or higher to thereby produce a copper alloy which has a higher recrystallization temperature than high-purity copper having a purity of 99.9999 mass% or higher and which has a lowered initial ball hardness in ball bonding. Those characteristics are thus achieved. Alternatively, phosphorus (P) is added in an amount as slight as 0.5-15 mass ppm to high-purity copper having a purity of 99.9985 mass% or higher, and the total amount of any other impurities contained in the copper is reduced to a value lower than the phosphorus (P) content. Those characteristics are thereby achieved.

Description

The high-purity copper welding lead
Technical field
The present invention relates to connect by the ball bonding connection that adopts lead welding machine the copper alloy lead-in wire of the substrate of IC chip electrode and wire etc., relate in particular to the welding lead of the room temperature hardness softness of initial soldered ball (FAB).
Background technology
In the past, as the method for the electrode that connects the IC chip and the wire on the substrate etc., known replacement gold wire and the method for using highly purified copper alloy lead-in wire to connect up by the ball bonding connection.
Normally take following methods in the method that connects up by the ball bonding connection: the highly purified copper alloy lead-in wire that stretches out from reel winder is imported into the welded tube as soldering appliance, then, by and the electrode welding gun between micro discharge, make copper alloy guide-wire tip melting under inert atmosphere or reducing atmosphere of the outlet side that imports to this instrument form initial soldered ball (FAB), then, this melting soldered ball limit is carried out the ultrasonic vibration limit with on the electrode of IC chip of its thermal compression welding after the heating.After this, make welded tube mobile along XYZ (all around, up and down), the copper alloy lead-in wire shape according to the rules that is installed on the electrode of IC chip is formed the loop, after wedge bonding is connected on the outside wiring lead framework, carry out wire bonds thereby cut off the high-purity copper alloy lead wire.
But, because the high-purity copper alloy lead wire is easily by existing oxygen oxidation in the atmosphere, so when forming above-mentioned initial soldered ball (FAB), its surperficial oxidized film covers in atmosphere, and makes the impurity that is present in the molten copper metal also oxidized by the oxygen that is diffused into soldered ball inside.For this reason, in having the atmosphere of aerobic, the fusion weld club hardening of high-purity copper alloy lead wire when thermal compression welding on the electrode of above-mentioned IC chip, can produce the problem of weldability variation and IC chip rupture.So far, the breaking of IC chip is considered to result from the oxide-film of high-purity copper alloy, for preventing the formation of this oxide-film, be set as the complete closed atmosphere of only using inert gas, or use and sneak into the hydrogen with reduction effect in the inert gas atmosphere and form above-mentioned initial soldered ball (FAB), thereby prevent the oxidation (patent documentation 1,2,3) of the initial soldered ball (FAB) of copper alloy lead-in wire.
On the other hand, some academic researchs are arranged also, attempt to reduce as much as possible the element that forms impurity or oxide by the purity of copper metal lead wire is brought up to 99.999% even 99.9999% from 99.99%.This be because, the purity of copper metal lead wire is higher, the ball shape when forming the melting soldered ball is more near ball, more near ball, the distortion on the solder side that is formed by thermal compression welding is near circle.
But along with the purity of copper metal lead wire uprises, recrystallization temperature will step-down, and copper metal lead wire self will deliquescing.Therefore, process even carry out in advance work hardening, also age softening can occur, thereby make become difficulty very of the use of the highly purified copper metal lead wire that has softened.The copper metal lead wire used of welding lead particularly, because be mass-produced by Wire Drawing, if so improve the purity of copper metal lead wire, can because the frictional heat between copper metal lead wire and wire-drawing die makes highly purified copper metal lead wire self softening in the Wire Drawing process, cause lead-in wire to cut off.In addition, as long as although spend a little time also can study out this highly purified copper metal lead wire, even but use this highly purified copper metal lead wire on the electrode of above-mentioned IC chip, also to weld with ultrasonic wave and heat, when forming the loop of regulation from being welded on copper metal lead wire on the IC chip electrode, the performance of the high-purity copper metal lead wire that about 99.999 quality % are above can descend.
As the countermeasure of these problems, several reports (patent documentation 1,2,3) that go between about the copper alloy that adds various trace elements in highly purified copper metal are arranged.But, when ball bonding connects when having oxygen in the atmosphere, even highly purified copper alloy lead-in wire initial soldered ball (FAB) also can occur and not become spherical shape, or initial soldered ball (FAB) thus become the problem that causes semi-conductive IC chip rupture really up to the mark.For this cause, can't carry out the thermal compression welding of weld strength height, the initial soldered ball of gratifying utilization (FAB), perhaps can not draw gratifying loop, up to the present, utilize highly purified copper alloy lead-in wire to fail to reach the practical level of standing.
The prior art document
Patent documentation
[patent documentation 1] TOHKEMY 2003-133364 communique
[patent documentation 2] TOHKEMY 2008-085320 communique
[patent documentation 3] Japanese JP 05-20493 communique
Summary of the invention
Therefore, requirement obtains a kind of such welding lead, that is, although be to be gone between with copper alloy by the ball bonding that highly purified copper alloy consists of, but can easily carry out the wire-drawing die processing under the room temperature, and can not produce and result from the breaking of IC chip of initial soldered ball (FAB).
The present invention proposes in view of above situation, purpose is to provide a kind of welding lead, its recrystallization temperature is high, although be the copper alloy lead-in wire that is made of the highly purified copper alloy that can carry out Wire Drawing, the initial soldered ball (FAB) of copper alloy lead-in wire or the room temperature hardness of melting soldered ball are lower than the situation of the copper metal lead wire that is made of the high purity metal that does not add trace.Particularly, exactly by the be improved high-purity alloy lead-in wire of recrystallization temperature of the phosphorus (P) that adds trace.One adds phosphorus (P), and the recrystallization temperature of highly purified copper metal just can sharply rise.Therefore, even if add the phosphorus (P) of trace, the Wire Drawing that the copper alloy lead-in wire is at room temperature undertaken by the mould wire drawing possibility that also can become.And, if the purity of copper (Cu) metal and the addition of phosphorus (P) are controlled to be appropriateness, the room temperature hardness that the initial soldered ball (FAB) of phosphorus (P) copper alloy lead-in wire afterwards can occur adding is lower than the scope of the situation of the copper metal lead wire that does not add phosphorus phosphorus (P).Purpose of the present invention just is to provide a kind of so highly purified copper alloy lead-in wire.
The room temperature hardness of initial soldered ball (FAB) or melting soldered ball is the reason that causes the IC chip rupture, and the inventor is based on this point, and the interpolation element of the room temperature hardness that reduces initial soldered ball (FAB) or melting soldered ball is explored.Found that the phosphorus of ormal weight (P) can reduce the initial soldered ball (FAB) of high-purity copper metal or the room temperature hardness of melting soldered ball.The additive effect of the phosphorus (P) that produces for the high-purity copper metal although the purity of copper (Cu) is more high more obvious, also is subjected to the impact of impurities element in copper (Cu) metal.The inventor finds, add the copper alloy lead-in wire behind the trace amounts of phosphorus (P) in the high-purity copper metal lead wire of about 99.9999 quality %, although recrystallization temperature rises, but compare with the highly purified copper metal lead wire that does not add phosphorus (P), the room temperature hardness of initial soldered ball (FAB) or melting soldered ball descends.
Also known in the past, when adding some element in the high-purity copper metal more than the 99.999 quality %, the recrystallization temperature of copper alloy lead-in wire can rise, and the room temperature hardness of copper alloy lead-in wire itself can increase.That is, the room temperature hardness of high-purity copper alloy lead wire increases this understanding, and being considered to increases along with the addition of trace additives.In fact, situation for phosphorus (P), along with in the high-purity copper metal lead wire more than the 99.9999 quality %, addition being increased by 20 quality ppm, 50 quality ppm, 100 quality ppm, 200 quality ppm and 400 quality ppm from 0 quality ppm, the continuous granular of the grain size number of high-purity copper metal lead wire, on the surface, as if along with the rising of recrystallization temperature, the strength of materials itself is also rising, and room temperature hardness is also increasing.Therefore, academicly, add between room temperature hardness and the high-purity copper metal lead wire that does not add phosphorus (P) of copper alloy lead-in wire of the phosphorus (P) about 10 quality ppm not than big difference, the difference of this kind degree is used as normally that the interior difference of experimental error scope processes.
About the situation of this respect, according to above-mentioned patent documentation 1:
Be the scope of 40 to 400 quality ppm at phosphorus (P) content, can prevent the formation of the oxide when the fusion weld ball forms, thereby and the hardness that reduces soldered ball prevent breaking of IC chip.
What patent documentation 2 was put down in writing is that at least a total amount that comprises among Mg and the P is the welding lead of 10 to 700 quality ppm, oxygen 6 to 20 quality ppm scopes,
The interpolation of Mg and phosphorus (P) within above-mentioned scope, can be avoided breaking of chip although can be used as, but improves the element of hardness.
In addition, patent documentation 3 has been put down in writing a kind of one or more element among Ti, Hf, V, Nb, Ta, Ni, Pd, Pt, Au, Cd, B, Al, In, Si, Ge, P, Sb, Bi, Se and the Te of being selected from that contains 0.001 to 2 % by weight, and remaining is essentially the welding lead of copper.Can think that these composition elements improve hardness.
But, research according to the inventor, scope below 20 quality ppm, with the content sectionalization of phosphorus (P) and add in the high-purity copper (Cu), found that, although the recrystallization temperature of highly purified copper alloy lead-in wire rises, the room temperature hardness after the initial soldered ball (FAB) of copper alloy lead-in wire or fusion weld ball form is compared the scope that decline is arranged with the room temperature hardness of the high-purity copper alloy lead wire of not phosphorous (P).Therefore, to add high-purity copper (Cu) to above the phosphorus (P) of this scope and 20 quality ppm and carry out accurate study, found that, although the recrystallization temperature of copper alloy lead-in wire rises along with the increase of phosphorus (P), but the room temperature hardness after the initial soldered ball (FAB) of copper alloy lead-in wire or fusion weld ball form does not rise with the increase of phosphorus (P), although be the copper alloy lead-in wire of phosphorous (P), the scope lower than the room temperature hardness of high-purity copper metal lead wire arranged also.The metallic element that is included in the high-purity copper metal lead wire is fewer, and this scope shows more significantly.Find also that in addition the lower hardness effect that phosphorus (P) produces copper (Cu) is even exist the situation of Ag, Ca, Fe, Mn, Mg, Ni, Al, Pb and Si also less influenced.(Fig. 1)
Fig. 1 be with the expression these relations graphical data form.The longitudinal axis is the hardness corresponding with P content after the fusion weld ball forms, as seen from the figure, from near phosphorus (P) content is 200 quality ppm, hardness rises along with the increase of phosphorus (P) content, this is the phenomenon known to usually, but, phosphorus (P) content than 150ppm near low scope hardness uprise, in case after rising to 100mN, the scope that exists hardness sharply to descend.
Amplification sector among the figure i.e. this part, and P content is between near 0.5 to the 15 quality ppm, and its hardness is that phosphorus (P) content is below the hardness of 0 high-purity copper metal.
Phosphorus (P) can be thought based on following phenomenon for the reduction effect of the room temperature hardness of high-purity copper (Cu) alloy.That is, can think, be melted by sparkover as the copper alloy of welding lead lead-in wire, from atmosphere, oxygen is sucked in the molten copper (Cu), but the part of the oxide of copper alloy wire surface be blocked and then is evaporated by phosphorus (P).So, for the situation of the high-purity copper alloy lead wire more than about 99.998 quality %, because the metallic element except phosphorus (P) only is about 10 quality ppm, so the absolute magnitude of the impurity that can connect with oxygen welding seldom, can not form the oxide-film of hard, so the room temperature lower hardness of high-purity copper alloy lead wire.This explanation comparison operators is logical.
That is to say that copper alloy gone between thermal compression welding under ul-trasonic irradiation on the electrode of IC chip the time, the room temperature hardness of the initial soldered ball (FAB) of copper alloy lead-in wire is low, should be able to alleviate the chip damage that copper alloy goes between and causes to the IC chip.
And, as mentioned above, when being required in above-mentioned wire bonds, the recrystallization temperature of indispensable copper alloy lead-in wire rises in the Wire Drawing that goes between under similarity condition, the age softening of copper alloy lead-in wire itself obtains relaxing, thereby can keep the desired intensity of Wire Drawing.
More than understanding facilitates the inventor to finish the present invention.
Particularly, according to the present invention,
(1) can provide a kind of high-purity ball bonding to connect with copper alloy goes between, the welding lead of described copper alloy is made of phosphorus (P) and copper (Cu), this high-purity ball bonding connects with the copper alloy lead-in wire and is characterised in that: compare with the situation of the copper metal lead wire that does not add phosphorus (P), the room temperature hardness of the initial soldered ball (FAB) of the copper alloy lead-in wire of interpolation phosphorus (P) is lower.
And, according to the present invention,
(2) can provide a kind of high-purity ball bonding to connect with copper alloy goes between, the welding lead of described copper alloy is made of phosphorus (P) and copper (Cu), this high-purity ball bonding connects with the copper alloy lead-in wire and is characterised in that: compare with the situation of the copper metal lead wire that does not add phosphorus (P), the room temperature hardness of the initial soldered ball (FAB) of the copper alloy lead-in wire of interpolation phosphorus (P) is lower, and the total amount of phosphorus (P) metallic element in addition in the copper (Cu) is that phosphorus (P) is below the content.
And, according to the present invention,
(3) can provide a kind of high-purity ball bonding to connect with copper alloy goes between, the welding lead of described copper alloy is made of phosphorus (P) and copper (Cu), this high-purity ball bonding connects with the copper alloy lead-in wire and is characterised in that: described copper alloy lead-in wire is by the phosphorus (P) of 0.5 to 15 quality ppm, and all the other parts are that the above copper (Cu) of purity 99.9985 quality % consists of, and, compare with the copper metal lead wire more than the purity of not adding phosphorus (P) is 99.9985 quality %, the room temperature hardness of the initial soldered ball (FAB) of this copper alloy lead-in wire is lower.If the phosphorus that constitutes 0.5 to 10 quality ppm (P) of copper alloy lead-in wire, reaching all the other parts is the above copper (Cu) of purity 99.9985 quality %, and the room temperature hardness of initial soldered ball (FAB) will further reduce, so preferred.
And, according to the present invention,
(4) can provide a kind of ball bonding to connect with copper alloy goes between, the welding lead of described copper alloy is made of phosphorus (P) and copper (Cu), this ball bonding connects with the copper alloy lead-in wire and is characterised in that: be the phosphorus (P) by 0.5 to 15 quality ppm, and all the other parts are the high-purity copper alloy lead wire that the above copper (Cu) of purity 99.9985 quality % consists of, and, the total amount of phosphorus (P) metallic element in addition in the copper (Cu) is that phosphorus (P) is below the content, compare with the copper metal lead wire more than the purity of not adding phosphorus (P) is 99.9985 quality %, the room temperature hardness of the initial soldered ball (FAB) of this copper alloy lead-in wire is lower.
The effect of invention
Ball bonding of the present invention connects with the copper alloy lead-in wire, by the deoxidation of trace amounts of phosphorus (P), makes it not form the oxide-film of hard on initial soldered ball (FAB) surface of copper (Cu), therefore has the effect of the chip damage that can alleviate the Si chip.And, when similarly wire being carried out the second welding, because the deoxidation of phosphorus (P) improves the fracture load of the welding lead in the stretching strength measurement.In this case, use the weld strength testing apparatus to measure hot strength, compare with the fracture rate at the crimping position of the second welding as can be known, increase at the fracture rate of the lead portion that forms the loop, this illustrates that these characteristics are improved.
In ball bonding of the present invention connect with the copper alloy lead-in wire, preferred purity was that contained metallic element is Ag, Ca, Fe, Mn, Mg, Ni, Al, Pb and Si in the above copper (Cu) of 99.999 quality %.Its reason is, even these metallic elements and phosphorus (P) coexistence as long as below a certain amount of, then can not improve the room temperature hardness of the initial soldered ball (FAB) of copper (Cu).In addition, if contain these metallic elements in the copper (Cu), erect image is known today, and these metallic elements all have effect to the recrystallization temperature that improves copper (Cu).
In ball bonding of the present invention connect with the copper alloy lead-in wire, purity was contained metallic element in the above copper (Cu) of 99.999 quality %, and preferred dephosphorization (P) is in addition less than 10 quality ppm.This is the deoxidation effect for this phosphorus of room temperature hardness (P) that can bring into play better the initial soldered ball (FAB) that reduces copper (Cu).
Description of drawings
Fig. 1 represent in the high-purity C u alloy welding lead of the present invention phosphorus (P) content and the expression hardness fracture strength between relation.
Embodiment
As follows, specifically made welding lead of the present invention, and implementation the affirmation of age softening effect, the affirmation of recrystallization temperature, the room temperature hardness of melting soldered ball and the affirmation of chip rupture number.
Embodiment 1
[ball bonding connects the manufacture method with the copper lead-in wire]
The manufacture method that ball bonding involved in the present invention is connect with the copper alloy lead-in wire describes.With high-purity copper (Cu) metal (as Cu feed metal [A]) more than the 99.9999 quality %, reaching above high-purity copper (Cu) metal (as Cu feed metal [B]) of 99.999 quality % is raw material, and the sample of phosphorus copper alloy lead-in wire (P), the as shown in table 1 composition of defined amount has been added in preparation.The sample of these compositions according to the method same with the manufacture method of high-purity gold wire, is processed into welding lead.At first, the raw material with ormal weight carries out being cast as ingot casting after the melting in vacuum melting furnace.To implementing withdraw from a secret society or underworld gang processing and antirust processing etc. after this ingot casting grooved roller roll compacting, making diameter is the high-purity copper alloy lead wire of 25 μ m.
[affirmation of age softening effect]
To the high-purity copper more than the 99.9999 quality % and the age softening effect of high-purity copper lead-in wire (Φ 200 μ m) after adding the phosphorus (P) of ormal weight in this high-purity copper, as shown in table 1 confirm.Its result is as shown in table 2.
Table 1: with respect to the P content of high-purity copper
Figure BDA00002188164400071
Table 2: age softening effect and recrystallization temperature
Figure BDA00002188164400081
Carried out ultrasonic wave by the ball bonding connection and tested with thermal compression welding with the high-purity copper alloy lead wire shown in the table 1.The ball bonding connection is method as described below: with the electrode of welding lead to the IC chip, when the electrode that especially is made of Al metal or Al alloy and outside lead connect up, in the first welding, make the initial soldered ball (FAB) of molten copper (Cu) and be heated between about 200 ℃ Al electrode and weld, in the second welding, do not form the melting soldered ball, under the ultrasonic waves effect, crimping is carried out in the lead-in wire side, make it and be heated to about 200 ℃ silver-plated lead frame welding.At this moment, it is in the atmosphere of 95% nitrogen+5% hydrogen that the ball bonding of IC chip side connects, and it is that to connect power be to carry out under 0.30 watt the condition for 10 milliseconds, ball bonding for 0.2N, ball bonding connect the time that ball bonding connects load.In addition, the second welding of outside wiring side is that to connect the time for 0.3N, ball bonding at load be that to connect power be to carry out under 0.40 watt the condition for 10 milliseconds, ball bonding.
[30,000 tests]
For this high-purity copper alloy lead wire, use ball bonding connection device (trade name [UTC-1000] that Arakawa Co., Ltd. makes), respectively at the Al electrode that is heated to about 200 ℃ IC chip and be heated in the outside wiring of about 200 ℃ silver-plated lead frame, the ball bonding of having carried out continuously 30,000 ultrasonic waves and usefulness connects.At this moment, it is in the atmosphere of 95% nitrogen+5% hydrogen that the ball bonding of IC chip side connects, and it is that to connect power be to carry out under 0.30 watt the condition for 10 milliseconds, ball bonding for 0.2N, ball bonding connect the time that ball bonding connects load.In addition, the second welding of outside wiring side is that to connect the time for 0.3N, ball bonding at load be that to connect power be to carry out under 0.40 watt the condition for 10 milliseconds, ball bonding.
In this test, the come off number of times of the not crimping that causes of the Al film by the first ball bonding is counted, with its measurement result shown in the right hurdle of table 3.
[the room temperature hardness of the recrystallization temperature of lead-in wire and initial soldered ball (FAB)]
About the recrystallization temperature of lead-in wire, the temperature that the state material of check after the Wire Drawing is fully softening, and this temperature charged to such as table 2 as recrystallization temperature.
Evaluation about the room temperature hardness of the initial soldered ball (FAB) of the copper alloy of melting and solidification in the first ball bonding lead-in wire or melting soldered ball, 10 data that connect by ball bonding of from 30,000 ball bonding samples, choosing arbitrarily, use Co., Ltd.'s alum to make made micro Vickers (model [DMH-1]) and measure, and calculated mean value.Measurement result is as shown in table 3.
The relation that the aluminium film that the room temperature hardness of the initial soldered ball of table 3 and welding cause comes off
In the recrystallization temperature of table 2 as can be known, with the high-purity copper lead-in wire that does not add phosphorus (P) fully in the comparative example 10 and the interpolation in the comparative example 11 denier phosphorus (P) the high-purity copper lead-in wire relatively, the interpolation among the embodiment No.1 to No.9 the recrystallization temperature of copper alloy lead-in wire of the phosphorus of ormal weight (P) high.
On the other hand, it can also be seen that, with the high-purity copper metal lead wire that does not add phosphorus (P) fully in the comparative example 10 and the interpolation in the comparative example 15 a large amount of phosphorus (P) the copper alloy lead-in wire relatively, interpolation among the embodiment No.6,7 the room temperature hardness of initial soldered ball of about 99.999 quality % high-purity copper alloy lead wires of the phosphorus of ormal weight (P) low, the number of times also few (30,000 times test value is zero) that comes off of the aluminium film shown in the table 2.
As mentioned above, welding lead of the present invention, although its recrystallization temperature is high, the room temperature hardness of initial soldered ball (FAB) is low, in 30,000 times ball bonding number of times, the problem that the aluminium film comes off is all significantly reduced.
Therefore, welding lead of the present invention, because its recrystallization temperature is high, the age softening effect is little, so can keep lead-in wire Wire Drawing characteristic.Simultaneously, because the room temperature hardness of initial soldered ball is low in ball bonding connects, so can effectively prevent breaking of chip.
Industrial applicibility
According to welding lead provided by the present invention, added the de copper alloy lead-in wire of the present invention of ormal weight phosphorus (P), has excellent preventing effectiveness for resulting from the chip rupture of initial soldered ball (FAB), and, can similarly carry out Wire Drawing with welding lead in the past, to improving the excellent effect of reliability performance of semiconductor device.

Claims (3)

1. a ball bonding connects with copper alloy and goes between, described copper alloy lead-in wire comprises: the phosphorus of 0.5 to 15 quality ppm, and the above copper of the purity 99.9985 quality % of all the other parts, it is characterized in that: compare with the copper metal lead wire more than the purity of not adding phosphorus is 99.9999 quality %, reduced the room temperature hardness of the initial soldered ball of this copper alloy lead-in wire.
2. a high-purity ball bonding connects with copper alloy and goes between, described copper alloy lead-in wire comprises: by the phosphorus of 0.5 to 15 quality ppm, and all the other parts are the above copper of purity 99.9985 quality %, it is characterized in that: the total amount of the metallic element beyond the phosphorus in the copper is below the phosphorus content, compare with the copper metal lead wire more than the purity of not adding phosphorus is 99.9999 quality %, reduced the room temperature hardness of the initial soldered ball of this copper alloy lead-in wire.
3. high-purity ball bonding as claimed in claim 2 connects with copper alloy lead-in wire, it is characterized in that: the metallic element beyond the phosphorus in the copper be among Pt, Au, Ag, Pd, Ca, Fe, Mn, Mg, Ni, Al, Pb and the Si any one or two or more.
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CN104593618A (en) * 2015-01-06 2015-05-06 湖南金龙国际铜业有限公司 High-conductivity ultrafine alloy regeneration copper rod and refining method thereof
CN104904000A (en) * 2013-10-10 2015-09-09 三菱综合材料株式会社 Bonding-wire copper strand, and manufacturing method for bonding-wire copper strand
CN105190858A (en) * 2013-04-25 2015-12-23 富士电机株式会社 Semiconductor device and method for manufacturing semiconductor device
CN105405828A (en) * 2014-09-15 2016-03-16 田中电子工业株式会社 Cross-sectional structure of fine copper alloy wire for ultrasonic bonding
CN112750550A (en) * 2019-10-31 2021-05-04 拓自达电线株式会社 Bonding wire and semiconductor device
CN112969805A (en) * 2018-12-13 2021-06-15 三菱综合材料株式会社 Pure copper plate

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CN105190858A (en) * 2013-04-25 2015-12-23 富士电机株式会社 Semiconductor device and method for manufacturing semiconductor device
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CN104904000A (en) * 2013-10-10 2015-09-09 三菱综合材料株式会社 Bonding-wire copper strand, and manufacturing method for bonding-wire copper strand
CN105405828A (en) * 2014-09-15 2016-03-16 田中电子工业株式会社 Cross-sectional structure of fine copper alloy wire for ultrasonic bonding
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CN104593618A (en) * 2015-01-06 2015-05-06 湖南金龙国际铜业有限公司 High-conductivity ultrafine alloy regeneration copper rod and refining method thereof
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