CN102857092B - Digital control type DC boosting device and application thereof - Google Patents

Digital control type DC boosting device and application thereof Download PDF

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Publication number
CN102857092B
CN102857092B CN201210341697.XA CN201210341697A CN102857092B CN 102857092 B CN102857092 B CN 102857092B CN 201210341697 A CN201210341697 A CN 201210341697A CN 102857092 B CN102857092 B CN 102857092B
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circuit
voltage
converter
output
apd
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CN102857092A (en
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张永臣
史振国
刘瑜
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Weihai Beiyang Electric Group Co Ltd
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Weihai Beiyang Electric Group Co Ltd
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Abstract

The present invention relates to technical field of optical fiber sensing, specifically a kind of digital control type direct current boosting power and application thereof, it is characterized in that being provided with ARM controller in digital control circuit, the A/D converter be connected with ARM controller respectively and D/A converter, A/D converter is connected with the input of simulating PI circuit with voltage detecting circuit output respectively with the other end of D/A converter, the output of simulation PI circuit is connected with the input of DC voltage booster circuit, DC voltage booster circuit is connected with APD module, temperature detecting unit is pasted onto APD Modular surface, wherein output is connected with ARM controller, the present invention compared with prior art, have the following advantages: APD voltage temperature regulates and adopts digital form to control, add flexibility and the accuracy of control, the device used is less, reduces the cost keeping APD gain stabilization.

Description

Digital control type DC boosting device and application thereof
Technical field
The invention belongs to technical field of optical fiber sensing, be specifically a kind ofly specially adapted in temperature-measuring system of distributed fibers, APD gain stabilization can be ensured, increase digital control type DC boosting device and the application thereof of the accuracy of thermometric.
Background technology
Since the eighties in 20th century, optical fiber sensing technology obtains in developed country and develops rapidly, and various Fibre Optical Sensor is widely used in the fields such as industry, national defence, Aero-Space, communications and transportation with the advantage of its uniqueness.From late 1970s, China takes to the research of this respect, and the Fibre Optical Sensor product of current domestic contrast maturation is: distributed optical fiber temperature measurement product.How temperature-measuring system of distributed fibers, based on optical fiber backward Raman scattering technology, obtains the key that the stokes light of backward Raman and anti-Stokes light signal are this systems.Due to stokes light and anti-Stokes light signal very faint, the method used at present is exactly by APD(avalanche photodide) light signal is converted to the signal of telecommunication, then uploaded through capture card data acquisition by operation amplifier.
The conversion of photosignal mainly relies on the photoelectricity avalanche effect of APD that light signal is converted to the signal of telecommunication, and the condition that APD produces photoelectricity snowslide is: one, apply certain voltage (25 DEG C large about 200V); Two, the photon of some is had to squeeze into.Digital control type direct current boosting power provides a stable high voltage for APD.
Very faint from the signal of APD output in photoelectric switching circuit, greatly about about 1uA, in order to introducing noise little as far as possible, the High voltage output fluctuation of direct current boosting power is the smaller the better.Simultaneously in order to reduce the fluctuation of photoelectric conversion output signal, APD gain must keep stable, and APD gain and ambient temperature residing for it, institute's making alive are relevant, in order to ensure APD gain stabilization, need ambient temperature residing for APD to regulate APD institute making alive.The main method addressed this problem at present ensures ambient temperature-stable residing for APD, applies fixed voltage to APD, and temperature control device and APD, for APD being made into butterfly encapsulation, are integrated in one by its method.APD temperature stabilization can be ensured in this way although adopt, as long as ensure that added by APD, voltage stabilization just can ensure APD gain stabilization, but adopt and need in this way to increase a large amount of temperature control peripheral circuits, and add the processing technology of APD, APD price also significantly increases.
Summary of the invention
The present invention is directed to the deficiency of existing maintenance APD gain stabilization method, propose a kind of rational in infrastructure, reliable operation, digital method can be used to realize closed-loop control, the digital control type DC boosting device that APD gain stability is good and the application thereof exported voltage.
The present invention can be reached by following measures:
A kind of digital control type DC boosting device, comprise digital control circuit, APD module, temperature detecting unit, DC voltage booster circuit, simulation PI circuit and voltage detecting circuit, it is characterized in that being provided with ARM controller in digital control circuit, the A/D converter be connected with ARM controller respectively and D/A converter, A/D converter is connected with the input of simulating PI circuit with voltage detecting circuit output respectively with the other end of D/A converter, the output of simulation PI circuit is connected with the input of DC voltage booster circuit, DC voltage booster circuit is connected with APD module, temperature detecting unit is pasted onto APD surface, its output is connected with ARM controller.
DC voltage booster circuit described in the present invention is provided with pulse generator U1, energy storage inductor L1, storage capacitor CD1 and MOSFET pipe T1, wherein the pulse output end of pulse generator U1 is connected with MOSFET pipe T1, two other pin of MOSFET pipe respectively with energy storage inductor L1, storage capacitor CD1 is connected, diode D1 is provided with between energy storage inductor L1 and storage capacitor CD1, in use, simulation PI inputs a voltage signal higher than 2.5V in pulse generator U1, pulse generator U1 pulse exports and is enabled, fixed frequency is sent to MOSFET pipe T1, pulse signal (as: the frequency 100kHz of fixed duty cycle, duty ratio 95%), when pulse signal is in high level, MOSFET pipe T1 is in conducting state, energy storage inductor L1 is in charged state, energy storage inductor L1 will store certain electric energy, when pulse signal is in low level, MOSFET pipe T1 is in cut-off state, energy storage inductor L1 is in discharge condition, energy storage inductor L1 discharges electric energy to storage capacitor CD1 by diode D1, storage capacitor CD1 obtains electric energy, current potential raises, the voltage that the current potential at pulse period storage capacitor CD1 two ends rises does not reach set point, gradually storage capacitor CD1 current potential can be raised to the value of setting by multiple pulse period, the current potential at storage capacitor CD1 two ends is raised to set point, simulation PI circuit exports a voltage signal lower than 2.5V, through voltage detecting circuit, pulse generator U1 detects that the level of pulse output enable pin is lower than 2.5V, stop pulse exports, keep output low level.
Three operational amplifiers are provided with in simulation PI circuit in the present invention, digital control circuit exports control signal and gives operational amplifier U1, for realizing the inverting input of giving operational amplifier U2 of signal by intensity 1 to 1 of the operational amplifier U1 output of voltage follow, after the difference that voltage detecting circuit exports and operational amplifier U1 exports is carried out a certain proportion of amplification computing by operational amplifier U2, export the inverting input giving operational amplifier U3, the difference that 2.5V voltage and operational amplifier U2 export is carried out integration and is amplified the output after computing as the final output of simulating PI circuit by operational amplifier U3.
The present invention in use, temperature detecting unit is pasted onto the temperature of APD surface measurement APD, ARM controller reads the temperature value of temperature detecting unit in real time, ARM controller checks the voltage that APD under this temperature value needs to add, this control voltage signal issues simulation PI circuit by D/A converter, the output voltage signal of detection and control voltage signal are carried out proportional integral computing by simulation PI circuit, the voltage of DC voltage booster circuit is regulated to export fast, the high pressure information of detection is issued simulation PI circuit and A/D converter by voltage detecting circuit, whether ARM controller is correct by the data validation APD institute making alive reading A/D.
Apply the method that said apparatus realizes digital control type DC boosting, it is characterized in that comprising the following steps:
Step 1, temperature detecting unit is pasted onto APD Modular surface, detects APD module temperature in real time, and ARM controller reads the temperature value that temperature detecting unit is measured in real time,
Step 2, ARM controller is according to the temperature value read, check APD temperature and voltage corresponding relation, the magnitude of voltage of correspondence is sent to simulation PI circuit by D/A converter, simulation PI exports a voltage signal higher than 2.5V, pulse generator pulse in simulation PI circuit exports and is enabled, fixed frequency is sent to MOSFET pipe, the pulse signal of fixed duty cycle, when pulse signal is in high level, MOSFET pipe is in conducting state, energy storage inductor is in charged state, energy storage inductor will store certain electric energy, when pulse signal is in low level, MOSFET pipe is in cut-off state, energy storage inductor is in discharge condition, energy storage inductor discharges electric energy to electric capacity by diode D1, storage capacitor obtains electric energy, current potential raises, the current potential at storage capacitor two ends is raised to set point, simulation PI circuit exports a voltage signal lower than 2.5V, pulse generator in simulation PI circuit detects that the level of pulse output enable pin is lower than 2.5V, stop pulse exports, keep output low level,
Step 3, whether A/D converter passes through the output voltage of the real-time detection DC voltage booster circuit of voltage detecting circuit, and ARM controller periodically reads the value of A/D converter and compares with D/A converter sending value, detect virtual voltage and export correct.
The voltage risen when the current potential at storage capacitor two ends in the pulse period in step 2 of the present invention does not reach set point, gradually CD1 current potential can be raised to the value of setting by multiple pulse period.
A kind of temperature-measuring system of distributed fibers, comprise laser generator, be connected with the output of laser generator and laser pulse is inputted the wavelength division multiplexer of sensor fibre, circuit is uploaded in sensor fibre, the photoelectric switching circuit be connected with wavelength division multiplexer, the signal amplification circuit be connected with the output of photoelectric switching circuit, the data acquisition that is connected with signal amplification circuit output, upload the temperature demodulation device that circuit is connected with data acquisition, it is characterized in that the APD voltage of described photoelectric switching circuit is provided by above-mentioned digital control type DC boosting device.
Temperature-measuring system of distributed fibers described in the present invention, wherein laser generator provides pulse laser beam for whole system, pulse laser beam throws sensor fibre into through wavelength division multiplexer, and laser produces backward Raman scattering in a fiber, carries temperature information in backward Raman signal, the effect of wavelength division multiplexer is separated pulse laser beam, Reyleith scanttering light, stokes light and anti-Stokes light, after pulse laser throws sensor fibre into, laser can produce Raman scattering and Rayleigh scattering in a fiber, the centre wavelength of Rayleigh scattering light is with to squeeze into laser center wavelength the same, the stokes light that Raman scattering generation wavelength is elongated and the anti-Stokes light that wavelength shortens, the Reyleith scanttering light filtering that WDM device will return, is split up into two-way and exports by stokes light and anti-Stokes light, photoelectric switching circuit effect converts light signal to the signal of telecommunication, the stokes light returned from wavelength division multiplexer and anti-Stokes light signal can not directly detect, just can measure after needing to be converted into the signal of telecommunication, light signal is converted to the signal of telecommunication by two APD by photoelectric switching circuit, the effect of signal processing circuit the signal of telecommunication is carried out amplification process under the prerequisite ensureing enough bandwidth, but it is very faint that light signal is converted to signal of telecommunication signal strength signal intensity by APD, be only the current signal of uA magnitude, signal processing circuit is divided into three grades of amplifications, the first order converts current signal to voltage signal, the second level is that forward amplifies, the third level is oppositely amplify, the effect that circuit is uploaded in data acquisition is that Stokes and Anti-Stokes signal are carried out analog-to-digital conversion, then complete certain number of times cumulative after by data upload to PC system, PC system can only carry out computing to digital quantity, so Stokes and anti-Stokes two-way analog quantity have to pass through data acquisition circuit be converted to the calculating that digital quantity just can carry out next step, because Stokes and Anti-Stokes signal have mixed a large amount of white noises, the data that single acquisition is uploaded cannot use, by certain number of times cumulative after white noise suppressed, data acquisition upload circuit by USB mode by the data upload after cumulative to PC system, the effect of temperature demodulation device is that the Stokes uploaded and Anti-Stokes data are passed through relevant algorithm realization to uploading data to temperature transition, temperature demodulation device itself is a PC main frame, it accepts the data of data acquisition circuit by USB interface, then runs respective algorithms and realizes temperature demodulation.
The present invention proposes digital control type DC boosting device and method, Programmable Logic Controller is facilitated directly to control, cost is lower, stable performance, for keeping APD gain stabilization to provide complete solution, digital control type direct current boosting power can use digital method to realize the closed-loop control exported voltage, control effects is good, APD gain stability is good, and circuit design is simple, significantly reduces expense.
accompanying drawing illustrates:
Accompanying drawing 1 is DC voltage booster circuit structural representation in the present invention.
Accompanying drawing 2 is a kind of structural representations of simulating PI circuit in the present invention.
Accompanying drawing 3 is a kind of structural representations of digital control part in the present invention.
Accompanying drawing 4 is structural representations of the present invention.
Reference numeral: digital control circuit 1, APD module 2, temperature detecting unit 3, DC voltage booster circuit 4, simulation PI circuit 5, voltage detecting circuit 6, ARM controller 7, A/D converter 8, D/A converter 9, power reference chip 10.
embodiment:
Below in conjunction with accompanying drawing and concrete enforcement, the present invention is further illustrated.
The present invention proposes a kind of digital control type DC boosting device, comprise digital control circuit 1, APD module 2, temperature detecting unit 3, DC voltage booster circuit 4, simulation PI circuit 5 and voltage detecting circuit 6, it is characterized in that being provided with ARM controller 7 in digital control circuit 1, the A/D converter 8 be connected with ARM controller 7 respectively and D/A converter 9, A/D converter 8 is connected with the input of simulating PI circuit 5 with voltage detecting circuit 6 output respectively with the other end of D/A converter 9, the output of simulation PI circuit 5 is connected with the input of DC voltage booster circuit 4, DC voltage booster circuit 4 is connected with APD module 2, temperature detecting unit 3 is pasted onto APD module 2 surface, wherein output is connected with ARM controller 7.
As shown in Figure 1, DC voltage booster circuit described in the present invention is by pulse generator U1, energy storage inductor L1, storage capacitor CD1 and MOSFET pipe T1 forms, in use, simulation PI inputs a voltage signal higher than 2.5V in pulse generator, pulse generator U1 pulse exports and is enabled, send fixed frequency, the pulse signal of fixed duty cycle, when pulse signal is in high level, MOSFET pipe T1 is in conducting state, energy storage inductor L1 is in charged state, energy storage inductor L1 will store certain electric energy, when pulse signal is in low level, MOSFET pipe T1 is in cut-off state, energy storage inductor L1 is in discharge condition, energy storage inductor L1 discharges electric energy to storage capacitor CD1 by diode D1, energy storage CD1 obtains electric energy, current potential raises, the voltage that the current potential at pulse period storage capacitor CD1 two ends rises does not reach set point, gradually CD1 current potential can be raised to the value of setting by multiple pulse period, the current potential at CD1 two ends is raised to set point, simulation PI circuit exports a voltage signal lower than 2.5V, pulse generator U1 detects that the level of pulse output enable pin is lower than 2.5V, stop pulse exports, keep output low level.
As shown in Figure 2, simulation PI circuit 5 in the present invention, primarily of three operational amplifier compositions, wherein operational amplifier U1 realizes voltage follow function, operational amplifier U2 realizes scale operation function, operational amplifier U3 realizes integral operation function, during work, digital control circuit exports control signal and gives operational amplifier U1, operational amplifier U1 realizes voltage follow, operational amplifier U1 export signal strength signal intensity by 1 to 1 the inverting input giving operational amplifier U2, voltage detecting circuit is exported the difference exported with operational amplifier U1 and carries out a certain proportion of amplification computing by operational amplifier U2, the inverting input of operational amplifier U3 is given in the output of operational amplifier U2, the difference that 2.5V voltage and operational amplifier U2 export is carried out integration and is amplified computing by operational amplifier U3, the output of operational amplifier U3 is as the final output of simulating PI circuit, control the operating state of DC voltage booster circuit 4.
As shown in Figure 3, digital control part forms primarily of ARM controller 7, A/D converter 8, D/A converter 9, wherein arm processor 7 is connected with A/D converter 8, D/A converter 9, voltage detecting circuit 6, temperature detecting unit 3 respectively, and A/D converter 8 is also connected with power reference chip 10 with D/A converter 9 in addition.
Fig. 4 describes APD voltage temperature control block diagram, primarily of digital control circuit 1, simulation PI circuit 5, voltage detecting circuit 6, DC voltage booster circuit 4, temperature detecting unit 3 forms, digital control circuit 1 reads the temperature value of temperature detecting unit 3, digital control circuit 1 is according to APD voltage temperature relation, voltage control signal is sent to simulation PI circuit 5, simulation PI circuit 5 controls DC voltage booster circuit 4 fast according to the input of voltage detecting circuit 6 and digital control circuit 1 and boosts, the voltage of the final stable output of DC voltage booster circuit 4 gives APD module 2, digital control circuit 1 periodically obtains the magnitude of voltage of the circuit of DC boosting through voltage detecting circuit 6, whether normally detect voltage.
The digital control type DC boosting device that the present invention proposes, DC voltage booster circuit passes through fixed frequency, the pulse signal trigger power MOSFET of fixed duty cycle manages, energy storage inductor and storage capacitor realize DC boosting by discharge and recharge, simulation PI circuit carries out proportional integral computing to control inputs and feed back input, realize the quick control to output voltage, temperature detecting unit can be pasted on APD module 2 surface, and realize temperature digital and upload, digital control circuit ARM controller 7 is exported by D/A converter 9 control voltage, whether detect voltage by A/D converter 8 and voltage detecting circuit 6 exports normal.
The present invention compared with prior art, has the following advantages: APD voltage temperature regulates and adopts digital form to control, and adds flexibility and the accuracy of control; Booster circuit is simple, and the device of use is less, reduces the cost keeping APD gain stabilization.

Claims (2)

1. an Applied Digital controls the method that formula DC boosting device realizes digital control type DC boosting, described digital control type DC boosting device, comprise digital control circuit, APD module, temperature detecting unit, DC voltage booster circuit, simulation PI circuit and voltage detecting circuit, it is characterized in that being provided with ARM controller in digital control circuit, the A/D converter be connected with ARM controller respectively and D/A converter, A/D converter is connected with the input of simulating PI circuit with voltage detecting circuit output respectively with the other end of D/A converter, the output of simulation PI circuit is connected with the input of DC voltage booster circuit, DC voltage booster circuit is connected with APD module, temperature detecting unit is pasted onto APD Modular surface, its output is connected with ARM controller,
Described DC voltage booster circuit is provided with pulse generator U1, energy storage inductor L1, storage capacitor CD1 and MOSFET pipe T1, the pulse output end of its pulse generator U1 is connected with MOSFET pipe T1, two other pin of MOSFET pipe T1 is connected with energy storage inductor L1, storage capacitor CD1 respectively, is provided with diode D1 between energy storage inductor L1 and storage capacitor CD1;
Three operational amplifiers are provided with in simulation PI circuit, digital control circuit exports control signal and gives operational amplifier 1, for realizing the inverting input of giving operational amplifier 2 of signal by intensity 1 to 1 of operational amplifier 1 output of voltage follow, after the difference that voltage detecting circuit exports and operational amplifier 1 exports is carried out a certain proportion of amplification computing by operational amplifier 2, export the inverting input giving operational amplifier 3, the difference that 2.5V voltage and operational amplifier 2 export is carried out integration and is amplified the output after computing as the final output of simulating PI circuit by operational amplifier 3,
Comprise the following steps:
Step 1: temperature detecting unit is pasted onto APD Modular surface, detects APD module temperature in real time, and ARM controller reads the temperature value that temperature detecting unit is measured in real time,
Step 2:ARM controller, according to the temperature value read, checks APD module temperature and voltage corresponding relation, and the magnitude of voltage of correspondence is sent to simulation PI circuit by D/A converter, when simulation PI circuit exports a voltage signal higher than 2.5V, pulse generator U1 pulse exports and is enabled, fixed frequency is sent to MOSFET pipe T1, the pulse signal of fixed duty cycle, when pulse signal is in high level, MOSFET pipe T1 is in conducting state, energy storage inductor L1 is in charged state, energy storage inductor L1 will store certain electric energy, when pulse signal is in low level, MOSFET pipe T1 is in cut-off state, energy storage inductor L1 is in discharge condition, energy storage inductor L1 discharges electric energy to storage capacitor CD1 by diode D1, storage capacitor CD1 obtains electric energy, current potential raises, the current potential at storage capacitor CD1 two ends is raised to set point, when simulation PI circuit exports a voltage signal lower than 2.5V, pulse generator U1 detects that the level of pulse output enable pin is lower than 2.5V, and pulse generator U1 stop pulse exports, and keeps output low level,
Whether step 3:A/D transducer passes through the output voltage of the real-time detection DC voltage booster circuit of voltage detecting circuit, and ARM controller periodically reads the value of A/D converter and compares with D/A converter sending value, detect virtual voltage and export correct.
2. a kind of Applied Digital according to claim 1 controls the method that formula DC boosting device realizes digital control type DC boosting, it is characterized in that the voltage risen when the current potential at storage capacitor two ends in the pulse period in step 2 does not reach set point, then gradually storage capacitor CD1 current potential is raised to set point by multiple pulse period.
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CN104914895B (en) * 2015-04-10 2017-01-25 青岛创立科技开发有限公司 Distributed-type optical-fiber temperature measurement system gain stability control method
CN110658866B (en) * 2019-10-21 2021-11-23 苏州玖物互通智能科技有限公司 Current type closed loop temperature-dependent regulating system based on FPGA chip
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